JP2002145940A - Crosslinkable low relative dielectric constant polymer material and film, substrate and electronic part using the same - Google Patents
Crosslinkable low relative dielectric constant polymer material and film, substrate and electronic part using the sameInfo
- Publication number
- JP2002145940A JP2002145940A JP2000347181A JP2000347181A JP2002145940A JP 2002145940 A JP2002145940 A JP 2002145940A JP 2000347181 A JP2000347181 A JP 2000347181A JP 2000347181 A JP2000347181 A JP 2000347181A JP 2002145940 A JP2002145940 A JP 2002145940A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- polymer material
- low dielectric
- monomer
- constant polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002861 polymer material Substances 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims description 21
- 239000010408 film Substances 0.000 title description 23
- 239000000178 monomer Substances 0.000 claims abstract description 37
- -1 fumaric acid diester Chemical class 0.000 claims abstract description 20
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims abstract description 16
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 15
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Natural products OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims abstract description 14
- 239000001530 fumaric acid Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 230000000379 polymerizing effect Effects 0.000 claims abstract description 5
- 150000005690 diesters Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 239000004020 conductor Substances 0.000 abstract description 6
- 238000004132 cross linking Methods 0.000 abstract description 5
- 230000007261 regionalization Effects 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000003786 synthesis reaction Methods 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 238000004891 communication Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 5
- BLKQQTCUGZJWLN-VAWYXSNFSA-N dicyclohexyl (e)-but-2-enedioate Chemical compound C1CCCCC1OC(=O)/C=C/C(=O)OC1CCCCC1 BLKQQTCUGZJWLN-VAWYXSNFSA-N 0.000 description 5
- FNMTVMWFISHPEV-AATRIKPKSA-N dipropan-2-yl (e)-but-2-enedioate Chemical compound CC(C)OC(=O)\C=C\C(=O)OC(C)C FNMTVMWFISHPEV-AATRIKPKSA-N 0.000 description 5
- 239000003505 polymerization initiator Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 239000003708 ampul Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MLVSWIXRZNPEKF-OWOJBTEDSA-N bis(oxiran-2-ylmethyl) (e)-but-2-enedioate Chemical compound C1OC1COC(=O)/C=C/C(=O)OCC1CO1 MLVSWIXRZNPEKF-OWOJBTEDSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229920006337 unsaturated polyester resin Polymers 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002685 polymerization catalyst Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 2
- 239000007870 radical polymerization initiator Substances 0.000 description 2
- RAQPZQAQMHUKTB-TYYBGVCCSA-N (e)-but-2-enedioic acid;methanol Chemical compound OC.OC(=O)\C=C\C(O)=O RAQPZQAQMHUKTB-TYYBGVCCSA-N 0.000 description 1
- COXCGWKSEPPDAA-UHFFFAOYSA-N 2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)C#N COXCGWKSEPPDAA-UHFFFAOYSA-N 0.000 description 1
- YAAYJRKCGZQWCB-UHFFFAOYSA-N 2-(1-cyanopropyldiazenyl)butanenitrile Chemical compound CCC(C#N)N=NC(CC)C#N YAAYJRKCGZQWCB-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 1
- MGTVNFGFEXMEBM-UHFFFAOYSA-N 4-ethenyltriazine Chemical compound C=CC1=CC=NN=N1 MGTVNFGFEXMEBM-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical class ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- IYABWNGZIDDRAK-UHFFFAOYSA-N allene Chemical group C=C=C IYABWNGZIDDRAK-UHFFFAOYSA-N 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- NUHSROFQTUXZQQ-UHFFFAOYSA-N isopentenyl diphosphate Chemical compound CC(=C)CCO[P@](O)(=O)OP(O)(O)=O NUHSROFQTUXZQQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Formation Of Insulating Films (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、パターン形成能を
有する新規な低比誘電性高分子材料、及び、それを用い
たフィルム、基板、電子部品に関するものである。更に
詳しくは、高周波帯域における電気特性において低比誘
電率、低誘電正接性能を有し、かつ高温領域までの耐熱
性、金属箔に対する密着性ないし接着性に優れ、しかも
薄膜パターン形成能を有する低比誘電性高分子材料に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel low dielectric polymer material having a pattern forming ability, and to a film, a substrate, and an electronic component using the same. More specifically, it has a low relative dielectric constant and a low dielectric loss tangent performance in electrical characteristics in a high frequency band, and has excellent heat resistance up to a high temperature range, excellent adhesion or adhesion to a metal foil, and a thin film pattern forming ability. The present invention relates to a dielectric polymer material.
【0002】[0002]
【従来の技術】近年、通信情報量の急増に伴い、通信機
の小型化、軽量化、高速化が強く望まれており、これに
対応できる低比誘電性高分子材料が要求されている。特
に、自動車電話、デジタル携帯電話機等の携帯移動体通
信、衛星通信に使用される電波の周波数帯域は、メガヘ
ルツからギガヘルツ帯の高周波帯域のものが使用されて
いる。これら通信手段として使用される通信機器の急速
な発展の中で、基板、電子素子の小型高密度実装化が図
られている。このメガヘルツからギガヘルツ帯のような
高周波帯域に対応した通信機の小型化、軽量化の為に
は、優れた高周波電送特性を持つ電気絶縁材料の開発が
必要である。更に、高密度実装を図ろうとする場合に、
多層積層板とする以外の方法として、絶縁層を積み上げ
るビルドアップ工法には、使用される高分子材料として
は、電気特性以外にビアホール形成の為にパターン形成
ができる必要がある。2. Description of the Related Art In recent years, with the rapid increase in the amount of communication information, there has been a strong demand for smaller, lighter, and faster communication devices, and low dielectric constant polymer materials that can cope with such demands have been demanded. In particular, the frequency band of radio waves used for portable mobile communications such as automobile telephones and digital portable telephones, and satellite communications has a high frequency band from megahertz to gigahertz. With the rapid development of communication devices used as these communication means, miniaturization and high-density mounting of substrates and electronic elements have been attempted. In order to reduce the size and weight of a communication device compatible with a high frequency band such as the megahertz to gigahertz band, it is necessary to develop an electrical insulating material having excellent high-frequency transmission characteristics. Furthermore, when trying to achieve high-density mounting,
As a method other than forming a multilayer laminate, a build-up method of stacking insulating layers requires a polymer material to be used to be capable of forming a pattern for forming a via hole in addition to electric characteristics.
【0003】このように、電気絶縁性で、低比誘電率で
ある等の電気特性を有する材料として、通常、ポリオレ
フィン、塩素化塩化ビニル樹脂、フッ素系樹脂等の熱可
塑性樹脂、不飽和ポリエステル樹脂、ポリイミド樹脂、
エポキシ系樹脂、ビニルトリアジン樹脂(BTレジ
ン)、架橋性ポリフェニレンオキサイド、硬化性ポリフ
ェニレンエーテル等の熱硬化性樹脂等が提案されてい
る。更に、これら電気特性以外にパターン形成能を有す
る材料としては、感光性不飽和ポリエステル樹脂、感光
性ポリイミド樹脂、感光性エポキシ樹脂等が提案されて
いるが、実用上は感光性エポキシ樹脂を用いており、パ
ターン形成には光硬化を用いているのが一般的である。As described above, materials having electrical characteristics such as electrical insulation and a low dielectric constant are usually thermoplastic resins such as polyolefins, chlorinated vinyl chloride resins and fluororesins, and unsaturated polyester resins. , Polyimide resin,
Thermosetting resins such as epoxy resins, vinyl triazine resins (BT resins), crosslinkable polyphenylene oxides, and curable polyphenylene ethers have been proposed. Further, as materials having pattern forming ability in addition to these electrical properties, photosensitive unsaturated polyester resin, photosensitive polyimide resin, photosensitive epoxy resin and the like have been proposed, but in practice, using photosensitive epoxy resin In general, photo-curing is used for pattern formation.
【0004】これらパターン形成能を有する材料は、比
較的耐熱性が良好であるが、エポキシ樹脂、不飽和ポリ
エステル樹脂に関しては、比誘電率が3以上と比較的高
く、満足される特性が得られていない。一方、感光性ポ
リイミド樹脂は実用レベルにまで達していない。[0004] These materials having pattern forming ability have relatively good heat resistance. However, epoxy resins and unsaturated polyester resins have a relatively high relative dielectric constant of 3 or more, and satisfactory characteristics can be obtained. Not. On the other hand, the photosensitive polyimide resin has not reached a practical level.
【0005】[0005]
【発明が解決しようとする課題】本発明の目的は、金属
導体層との密着性ないし接着性が良好で、かつ架橋によ
るパターン形成能を有し、しかも比誘電率および誘電正
接が低く電気絶縁性に優れ、耐熱性に優れた低比誘電性
高分子材料を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide good adhesion or adhesion to a metal conductor layer, a pattern forming ability by cross-linking, and a low dielectric constant and a low dielectric loss tangent. An object of the present invention is to provide a low dielectric constant polymer material having excellent heat resistance and excellent heat resistance.
【0006】そして、この低比誘電性高分子材料を絶縁
基板上にコーティグあるいは貼り付け、架橋によりパタ
ーン形成できる加工特性に優れた基板を提供することで
ある。さらには、この低比誘電性高分子材料から得られ
る高周波領域での使用に適する電子部品を提供すること
である。It is another object of the present invention to provide a substrate having excellent processing characteristics in which the low dielectric constant polymer material is coated or pasted on an insulating substrate and a pattern can be formed by crosslinking. Another object of the present invention is to provide an electronic component suitable for use in a high-frequency region obtained from the low dielectric constant polymer material.
【0007】[0007]
【課題を解決するための手段】上記の目的を達成する本
発明の高分子材料は、単量体としてエポキシ基含有フマ
ル酸ジエステルを含む単量体組成物を重合して得られた
低比誘電性高分子材料である。The polymer material of the present invention which achieves the above object has a low dielectric constant obtained by polymerizing a monomer composition containing an epoxy group-containing fumaric acid diester as a monomer. Polymer material.
【0008】本発明の低比誘電性高分子材料において
は、前記エポキシ基含有フマル酸ジエステルが、下記式
(I)で表されるフマル酸ジエステルであることが好ま
しい。In the low dielectric constant polymer material of the present invention, the epoxy group-containing fumaric diester is preferably a fumaric diester represented by the following formula (I).
【0009】[0009]
【化4】 より具体的には、下記式(II)及び式(III)で表され
るフマル酸ジエステルが好適である。Embedded image More specifically, fumaric acid diesters represented by the following formulas (II) and (III) are preferred.
【0010】[0010]
【化5】 本発明の低比誘電性高分子材料においては、前記単量体
組成物がさらに下記式(IV)で表されるフマル酸エステ
ル系単量体を含む場合がある。Embedded image In the low dielectric constant polymer material of the present invention, the monomer composition may further include a fumarate ester monomer represented by the following formula (IV).
【0011】[0011]
【化6】 ここで、式中のR3はアルキル基またはシクロアルキル
基を表わし、R4はアルキル基、シクロアルキル基また
はアリール基を表わし、R3およびR4は同一でも異な
るものであっても良い。Embedded image Here, R 3 in the formula represents an alkyl group or a cycloalkyl group, R 4 represents an alkyl group, a cycloalkyl group or an aryl group, and R 3 and R 4 may be the same or different.
【0012】[0012]
【発明の実施の形態】以下、本発明の実施の形態につい
て詳細に説明する。Embodiments of the present invention will be described below in detail.
【0013】本発明の架橋によるパターン形成能を有す
る低比誘電性高分子材料は、エポキシ基含有フマル酸ジ
エステルを単量体として含む単量体組成物を重合して得
られたものであり、エポキシ基含有フマル酸ジエステル
から誘導される繰り返し単位を有するフマレート系重合
体である。The low dielectric constant polymer material of the present invention having a pattern forming ability by cross-linking is obtained by polymerizing a monomer composition containing an epoxy group-containing fumaric acid diester as a monomer. It is a fumarate polymer having a repeating unit derived from an epoxy group-containing fumaric acid diester.
【0014】エポキシ基含有フマル酸ジエステルの単量
体(以下、単量体αという)としては、高分子材料とし
たときに、高分子材料に低比誘電性や耐熱性を付与する
ものであれば、特に限定されるものではないが、上記式
(I)で表されるフマル酸ジエステルを好ましい例とし
て挙げることができる。The monomer of the epoxy group-containing fumaric acid diester (hereinafter, referred to as monomer α) may be one that imparts low dielectric constant and heat resistance to the polymer material when the polymer material is used. Although not particularly limited, fumaric diester represented by the above formula (I) can be mentioned as a preferred example.
【0015】式(I)中のR1、R2で表されるアルキ
レン基は、直鎖状であっても分岐を有するものであって
もよく、具体的にはメチレン基、エチレン基、トリメチ
レン基、プロピレン基、テトラメチレン基などが挙げら
れる。なお、R1とR2とは同一でも異なるものであっ
てもよい。The alkylene groups represented by R 1 and R 2 in the formula (I) may be linear or branched, and specifically include methylene, ethylene and trimethylene. Group, propylene group, tetramethylene group and the like. Note that R 1 and R 2 may be the same or different.
【0016】式(I)中のA、Bで表されるアルキレン
オキサイドは必須ではないが、例としてはエチレンオキ
サイド、プロピレンオキサイドなどが挙げられる。な
お、AとBとは同一でも異なるものであってもよい。The alkylene oxides represented by A and B in the formula (I) are not essential, but examples include ethylene oxide and propylene oxide. Note that A and B may be the same or different.
【0017】式(I)で表される単量体αの好適な例と
しては、上記式(II)で表されるジグリシジルフマレー
ト(DGF)と上記式(III)で表されるジシクロヘキ
シルグリシジルメタノールフマレート(di−CHGM
F)が挙げられる。これらはそれぞれ1種だけで用いて
も2種併用してもよい。Preferred examples of the monomer α represented by the formula (I) include diglycidyl fumarate (DGF) represented by the above formula (II) and dicyclohexylglycidyl represented by the above formula (III) Methanol fumarate (di-CHGM
F). These may be used alone or in combination of two or more.
【0018】上記単量体組成物は、単量体として、上記
単量体αとともに他のビニル系モノマー(以下、単量体
βという)を含有してもよい。すなわち、本発明の高分
子材料は、単量体αのみの重合体からなるものでも、あ
るいはまた、単量体αと単量体βとの共重合体からなる
ものでもよい。ここで、単量体βのビニル系モノマーと
しては、上記式(IV)で表されるフマル酸エステル系単
量体が好適である。The monomer composition may contain, as a monomer, another vinyl monomer (hereinafter, referred to as monomer β) in addition to the monomer α. That is, the polymer material of the present invention may be composed of a polymer composed of only the monomer α, or composed of a copolymer of the monomer α and the monomer β. Here, as the vinyl monomer of the monomer β, a fumarate ester monomer represented by the above formula (IV) is preferable.
【0019】なお、単量体αと単量体βの共重合体は、
ランダム共重合体、交互共重合体、ブロック共重合体の
いずれであっても良い。また、単量体αと単量体βとの
配合比率は、単量体αが50〜100重量%、単量体β
が0〜50重量%であることが好ましい。単量体βが5
0重量%を越えると耐熱性が低下し、吸水率が大きくな
るので好ましくない。単量体βが共重合されると柔軟性
が付与される。The copolymer of monomer α and monomer β is
Any of a random copolymer, an alternating copolymer, and a block copolymer may be used. The mixing ratio of the monomer α and the monomer β is such that the monomer α is 50 to 100% by weight,
Is preferably 0 to 50% by weight. Monomer β is 5
Exceeding 0% by weight is not preferred because the heat resistance decreases and the water absorption increases. When the monomer β is copolymerized, flexibility is imparted.
【0020】本発明の低比誘電性高分子材料の分子量は
特に限定されないが、絶縁基板へのビルドアップを形成
する場合には、絶縁基板自身がかなりの機械的強度を有
する為に、それに支えられる要素もあり、かつ、コーテ
ィングあるいは付着後に架橋使用され機械的強度が向上
する為に絶縁基板ほどの機械的強度は必要ない。従っ
て、絶縁基板ほどの高分子量体である必要はなく、成膜
が可能な分子量、即ち、数平均分子量で1000以上で
あればよい。The molecular weight of the low dielectric constant polymer material of the present invention is not particularly limited. However, when forming a build-up on an insulating substrate, since the insulating substrate itself has considerable mechanical strength, it cannot be supported. Some elements are used, and are not cross-linked and used after coating or adhesion, so that the mechanical strength is improved. Therefore, it is not necessary to be a high molecular weight substance as much as an insulating substrate, and it is sufficient if the molecular weight is such that a film can be formed, that is, the number average molecular weight is 1,000 or more.
【0021】本発明において、前記のフマレート系重合
体を製造するには、通常のラジカル重合法を用いること
ができる。重合に際し用いられる重合開始剤としては、
エポキシ基を保護する上からも過剰の加熱は避ける必要
があり、半減温度が80℃以下の有機過酸化物およびア
ゾ化合物の1種または2種以上を用いることが好まし
い。In the present invention, in order to produce the above-mentioned fumarate-based polymer, a usual radical polymerization method can be used. As the polymerization initiator used in the polymerization,
It is necessary to avoid excessive heating from the viewpoint of protecting the epoxy group, and it is preferable to use one or more of an organic peroxide and an azo compound having a half-life temperature of 80 ° C. or less.
【0022】このような重合開始剤としては、例えば、
過酸化ベンゾイル、ジイソプロピルペルオキシジカーボ
ネート、t−ブチルペルオキシジー2−エチルヘキサノ
エート、クメンパーオキサイド、t−ブチルヒドロパー
オキシド等の有機過酸化物、2,2’−アゾビスブチロ
ニトリル、アゾビス(2,4−ジメチルバレロニトリ
ル)、1,1’―アゾビス(シクロヘキサン−1−カル
ボニトリル)、2,2’−アゾビス(2,4−ジメチル
バレロニトリル)等のアゾ系化合物が挙げられる。重合
開始剤の使用量としては、原料単量体100重量部に対
して、10重量部以下が好ましく、さらに好ましくは5
重量部以下である。Examples of such a polymerization initiator include, for example,
Organic peroxides such as benzoyl peroxide, diisopropylperoxydicarbonate, t-butylperoxydi-2-ethylhexanoate, cumene peroxide, t-butyl hydroperoxide, 2,2′-azobisbutyronitrile, azobis Azo compounds such as (2,4-dimethylvaleronitrile), 1,1′-azobis (cyclohexane-1-carbonitrile), and 2,2′-azobis (2,4-dimethylvaleronitrile). The amount of the polymerization initiator to be used is preferably 10 parts by weight or less, more preferably 5 parts by weight, based on 100 parts by weight of the raw material monomer.
Not more than parts by weight.
【0023】重合は、定法に従って行うことができ、一
般には溶液重合法にて、不活性ガスの存在下に、重合開
始剤の種類によっても異なるが30〜100℃の範囲の
温度にて10〜72時間保持することで、所定の高分子
重合体が得られる。The polymerization can be carried out according to a conventional method. Generally, in a solution polymerization method, an inert gas is used at a temperature in the range of 30 to 100 ° C., depending on the type of the polymerization initiator. By holding for 72 hours, a predetermined high molecular polymer is obtained.
【0024】このようにして得られる本発明の高分子材
料は、エポキシ基含有フマル酸ジエステルから誘導され
る繰り返し単位を有するため、架橋によるパターン形成
能を有するとともに、低比誘電性であり、成膜性、金属
との密着性、機械的物性の面で優れる。Since the polymer material of the present invention thus obtained has a repeating unit derived from an epoxy group-containing fumaric acid diester, it has a pattern-forming ability by crosslinking, has a low dielectric constant, and has a low dielectric constant. Excellent in film properties, adhesion to metals, and mechanical properties.
【0025】本発明の低誘電率性高分子材料は、有機溶
媒に溶解し脱溶媒して成膜することにより、金属導電体
との密着性が良好な電気絶縁フィルムや電気絶縁層を簡
単かつ容易に形成することができる。その際、有機溶媒
にエポキシ基の開環重合触媒を添加しておけば、成膜後
に加熱または放射線照射することによってエポキシ基を
架橋させることができ、機械的物性を更に向上すること
ができる。また、放射線照射の際に、パターンフィルム
(フォトマスク)を通じて照射すると、放射線の照射を
受けた部分が架橋して溶剤溶解性が大きく落ちる為、溶
剤で未硬化部分を洗い落とすことにより、任意なパター
ンを形成することができる。The low dielectric constant polymer material of the present invention is formed by dissolving in an organic solvent, removing the solvent, and forming a film, whereby an electric insulating film or an electric insulating layer having good adhesion to a metal conductor can be easily and easily formed. It can be easily formed. At this time, if a ring-opening polymerization catalyst for an epoxy group is added to the organic solvent, the epoxy group can be cross-linked by heating or irradiation after film formation, and the mechanical properties can be further improved. In addition, when irradiating with radiation through a pattern film (photomask), the radiation-irradiated portions are crosslinked and the solvent solubility is greatly reduced. Can be formed.
【0026】ここで使用できる放射線としては、赤外
線、紫外線、電子線等があるが、露光感度、パターン線
幅を考慮すると、紫外線の使用が一般的である。また、
エポキシ基の重合開始触媒としては、放射線の照射によ
って重合を開始できるものであればよく、一般的には、
ジアゾニウム系、ヨードニウム系、金属錯体系、アルミ
ニウム錯体/アリルシアノール系等の光カチオン重合触
媒が挙げられる。The radiation that can be used here includes infrared rays, ultraviolet rays, electron beams, and the like. In consideration of exposure sensitivity and pattern line width, ultraviolet rays are generally used. Also,
As the polymerization initiation catalyst for the epoxy group, any catalyst capable of initiating polymerization by irradiation with radiation may be used.
Examples include photocationic polymerization catalysts such as diazonium, iodonium, metal complex, and aluminum complex / allyl cyanol.
【0027】本発明の低誘電率性高分子材料は、上記の
ようにフイルムとしたり、塗膜としたり、さらにはバル
ク状や成形体など、種々の形態で用いることができる。
従って、高周波用の共振器、フィルタ、コンデンサ、イ
ンダクタ、アンテナ等の電子部品の各種基板、チップ部
品としてのフィルタ(例えば多層基板であるCフィル
タ)や共振器(例えばトリプレート型共振器)、あるい
は誘電体共振器などの支持台、さらには各種基板ないし
電子部品のハウジングやケーシング、あるいはそれらの
コーティングなどに用いることができる。The low dielectric constant polymer material of the present invention can be used in various forms such as a film, a coating film, and a bulk or molded article as described above.
Therefore, various substrates for electronic components such as high-frequency resonators, filters, capacitors, inductors, antennas, etc., filters as chip components (for example, C filters that are multilayer substrates) and resonators (for example, triplate resonators), It can be used for a support such as a dielectric resonator, a housing or a casing of various substrates or electronic components, or a coating thereof.
【0028】本発明のフィルムとしては、低誘電率性高
分子材料をそれ自体でフィルム化したものでも、あるい
はまた、ガラス繊維に含浸させて得られるフィルムでも
よい。それ自体でフィルム化する方法としては、該高分
子材料を溶剤に均一に溶解させた後、ガラス板、シリコ
ーンゴム板、金属板などの型上で溶剤を蒸発させること
によって均一なフィルムを得るキャスティング法が挙げ
られる。また、ガラス繊維を用いる場合、上記低誘電率
性高分子材料の溶液をガラス繊維に含浸させ、その後脱
溶剤することによりフィルムを得ることができる。The film of the present invention may be a film obtained by forming a low dielectric constant polymer material by itself or a film obtained by impregnating glass fiber. As a method of forming a film by itself, after uniformly dissolving the polymer material in a solvent, casting is performed to obtain a uniform film by evaporating the solvent on a mold such as a glass plate, a silicone rubber plate, or a metal plate. Law. In the case of using glass fiber, a film can be obtained by impregnating the glass fiber with the solution of the low dielectric constant polymer material and then removing the solvent.
【0029】基板としては、部品搭載用オンボード基
板、銅張積層板などが挙げられ、更には回路内蔵基板、
アンテナ基板(例えばパッチアンテナ)などにも用いる
ことができる。Examples of the substrate include an on-board substrate for mounting components, a copper-clad laminate, and the like.
It can also be used for an antenna substrate (for example, a patch antenna).
【0030】上記のフィルムから所定の厚さの絶縁基板
を得る場合には、上記フィルムを所定の膜厚になるよう
残溶剤の状態で積層して乾燥させればよく、これによ
り、脱溶剤して目的の膜厚を有する基板を作成すること
ができる。この時必要に応じて加圧プレスすることも可
能である。また、その際、フィルム間に銅などの金属導
体層を挟み込むことにより多層基板を作成することもで
きる。When an insulating substrate having a predetermined thickness is obtained from the above-mentioned film, the above-mentioned film may be laminated and dried in a residual solvent state so as to have a predetermined thickness. Thus, a substrate having a desired film thickness can be formed. At this time, it is also possible to perform pressure pressing if necessary. In that case, a multilayer substrate can also be formed by sandwiching a metal conductor layer such as copper between the films.
【0031】本発明の低誘電率性高分子材料は、上記の
ようにパターン形成能を有するため、銅張積層板等の積
層板における感光層としての利用が特に好適である。す
なわち、本発明の基板には、絶縁基板上に銅などの金属
層を備え、その上に上記低誘電率性高分子材料からなる
感光層を備える積層板も含まれる。Since the low dielectric constant polymer material of the present invention has a pattern forming ability as described above, it is particularly suitable for use as a photosensitive layer in a laminate such as a copper-clad laminate. That is, the substrate of the present invention also includes a laminated plate provided with a metal layer such as copper on an insulating substrate and further provided thereon with a photosensitive layer made of the low dielectric constant polymer material.
【0032】[0032]
【実施例】以下に実施例を示すが、本発明はこれに限定
されるものではない。EXAMPLES Examples will be shown below, but the present invention is not limited to these examples.
【0033】(合成例1)上記式(II)で表されるジグ
リシジルフマレート(DGF)10重量部をガラス製ア
ンプルにとり、ラジカル重合開始剤としてアゾビスイソ
ブチロニトリル(AIBN)0.1重量部、さらに精製
ベンゼン1重量部をガラスアンプルにとった後、十分窒
素置換を行い、減圧および脱気を繰り返し、アンプルを
真空下溶封した。次に、このアンプルを40℃の恒温槽
に入れ、72時間保持した。重合終了後、内容液を大量
のメタノール中に投入し、重合体を沈殿分離し、減圧乾
燥させ、目的の重合物を得た。(Synthesis Example 1) 10 parts by weight of diglycidyl fumarate (DGF) represented by the above formula (II) was placed in a glass ampule, and azobisisobutyronitrile (AIBN) 0.1 was used as a radical polymerization initiator. A weight part and further 1 weight part of purified benzene were taken in a glass ampoule, and then sufficiently replaced with nitrogen, depressurization and deaeration were repeated, and the ampule was sealed under vacuum. Next, this ampoule was placed in a constant temperature bath at 40 ° C. and kept for 72 hours. After the completion of the polymerization, the content liquid was poured into a large amount of methanol, and the polymer was separated by precipitation and dried under reduced pressure to obtain a target polymer.
【0034】(合成例2)合成例1において、DGFの
かわりに、上記式(III)で表されるジシクロヘキシル
グリシジルメタノールフマレート(di−CHGMF)
を用いるほかは同様にして、ジシクロヘキシルグリシジ
ルメタノールフマレート(di−CHGMF)の重合体
を得た。(Synthesis Example 2) In Synthesis Example 1, dicyclohexylglycidylmethanol fumarate (di-CHGMF) represented by the above formula (III) is used instead of DGF.
Was used to obtain a polymer of dicyclohexylglycidylmethanol fumarate (di-CHGMF).
【0035】(合成例3)ジグリシジルフマレート(D
GF)5重量部およびジイソプロピルフマレート(di
−iPF)5重量部を用い、ラジカル重合開始剤として
ジイソプロピルペルオキシジカーボネート(IPP)
0.01重量部を用いた以外は合成例1と同様にして、
DGF/di―iPFの共重合体を得た。(Synthesis Example 3) Diglycidyl fumarate (D
GF) 5 parts by weight and diisopropyl fumarate (di
-IPF) using 5 parts by weight of diisopropyl peroxydicarbonate (IPP) as a radical polymerization initiator
Except that 0.01 parts by weight was used, the same as in Synthesis Example 1,
A copolymer of DGF / di-iPF was obtained.
【0036】(合成例4)ジシクロヘキシルグリシジル
メタノールフマレート(di−CHGMF)7重量部お
よびジシクロヘキシルフマレート(di―CHF)3重
量部を用いた以外は、合成例3と同様にして、di−C
HGMF/di―CHF共重合体を得た。Synthesis Example 4 Di-C was prepared in the same manner as in Synthesis Example 3 except that 7 parts by weight of dicyclohexylglycidylmethanol fumarate (di-CHGMF) and 3 parts by weight of dicyclohexyl fumarate (di-CHF) were used.
An HGMF / di-CHF copolymer was obtained.
【0037】(比較合成例1)ジイソプロピルフマレー
ト(di−iPF)10重量部を用いた以外は、合成例
1と同様にして、di−iPFの重合体を合成した。(Comparative Synthesis Example 1) A di-iPF polymer was synthesized in the same manner as in Synthesis Example 1 except that 10 parts by weight of diisopropyl fumarate (di-iPF) was used.
【0038】(比較合成例2)ジシクロヘキシルフマレ
ート(di―CHF)10重量部を用いた以外は、合成
例1と同様にして、di−CHFの重合体を合成した。(Comparative Synthesis Example 2) A di-CHF polymer was synthesized in the same manner as in Synthesis Example 1 except that 10 parts by weight of dicyclohexyl fumarate (di-CHF) was used.
【0039】合成例1〜4および比較合成例1〜2で得
られた各々の重合体および共重合体の数平均分子量Mn
および各種特性を表1に示す。Number average molecular weight Mn of each of the polymers and copolymers obtained in Synthesis Examples 1-4 and Comparative Synthesis Examples 1-2
Table 1 shows various properties.
【0040】(実施例)合成例1〜4および比較合成例
1〜2で得られた各重合体0.5gをそれぞれベンゼン
50mlに溶解させ、それに、表1に示す重合開始剤を
固形分に対して5重量%加えた。得られた溶液を平滑な
直径20cm程度のシャーレに注ぎ、その後、ベンゼン
をゆっくりと蒸発させてフィルムを得た。次いで、高圧
水銀灯80W×1灯を用いて積算照度1000mj/c
m2にて紫外線を照射し、その後の樹脂物性を測定し
た。結果を表1に示す。(Example) 0.5 g of each polymer obtained in Synthesis Examples 1 to 4 and Comparative Synthesis Examples 1 and 2 was dissolved in 50 ml of benzene, and the polymerization initiator shown in Table 1 was added to solid content. 5% by weight was added. The obtained solution was poured into a smooth Petri dish having a diameter of about 20 cm, and then benzene was slowly evaporated to obtain a film. Then, using a high-pressure mercury lamp 80W x 1 lamp, the integrated illuminance 1000mj / c
The resin was irradiated with ultraviolet rays at m 2 and the physical properties of the resin were measured thereafter. Table 1 shows the results.
【0041】[0041]
【表1】 [Table 1]
【0042】表1に示すように、本発明に係る合成例1
〜4の高分子材料で形成された膜は、金属との密着性が
良好で、半田耐熱性に優れるとともに、周波数帯が1G
Hzから5GHzの高周波数帯において、比誘電率
(ε)が2.0〜2.6、かつ、誘電正接(tanδ)
が0.0018〜0.0042であり、優れた電気絶縁
性を備えていた。As shown in Table 1, Synthesis Example 1 according to the present invention
The films formed of the polymer materials of Nos. To 4 have good adhesion to metal, excellent soldering heat resistance, and a frequency band of 1G.
In the high frequency band from 5 Hz to 5 GHz, the relative dielectric constant (ε) is 2.0 to 2.6 and the dielectric loss tangent (tan δ)
Was 0.0018 to 0.0042, which provided excellent electrical insulation.
【0043】[0043]
【発明の効果】本発明の低比誘電率性高分子材料は、特
定のエポキシ基含有不飽和二塩基酸ジエステルの単量体
もしくはこれとビニル系モノマーを重合して得られるも
のであり、架橋によるパターン形成能を有するととも
に、成膜性、耐熱性に優れ、金属導体層との密着性ない
し接着性も良好である。また、メガヘルツからギガヘル
ツ帯の高周波帯域における比誘電率および誘電正接が低
く電気絶縁性に優れる。The low dielectric constant polymer material of the present invention is obtained by polymerizing a specific epoxy group-containing unsaturated dibasic acid diester monomer or a vinyl monomer with the monomer. And has excellent film-forming properties and heat resistance, as well as good adhesion or adhesion to the metal conductor layer. In addition, the dielectric constant and the dielectric loss tangent in the high frequency band from megahertz to gigahertz are low and the electrical insulation is excellent.
【0044】そして、この低比誘電性高分子材料を用い
ることにより、金属導電体との密着性が良好な電気絶縁
フィルムを簡単かつ容易に形成することができ、また、
パターン形成可能な加工特性に優れる多層基板を得るこ
とができ、さらに、高周波領域での使用に適する電子部
品が得られる。By using this low dielectric constant polymer material, an electric insulating film having good adhesion to a metal conductor can be easily and easily formed.
It is possible to obtain a multilayer substrate excellent in processing characteristics capable of forming a pattern, and to obtain an electronic component suitable for use in a high-frequency region.
フロントページの続き (72)発明者 山田 俊昭 東京都中央区日本橋一丁目13番1号 ティ ーディーケイ株式会社内 (72)発明者 菅原 輝明 滋賀県守山市石田町910−60 (72)発明者 鈴木 直文 滋賀県守山市播磨田町280−93 Fターム(参考) 4F071 AA36 AG15 AH12 AH13 BC01 BC07 4J100 AL39P AL39Q BC04P BC04Q BC54P CA01 DA57 JA44 5E346 AA05 AA06 AA12 AA13 AA23 CC02 CC08 CC09 EE08 EE31 EE33 EE38 GG28 HH06 HH13 5F058 AA08 AA10 AC01 AC06 AC07 AF04 AG01 AH02 AH03 Continued on the front page (72) Inventor Toshiaki Yamada 1-1-13 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation (72) Inventor Teruaki Sugawara 910-60 Ishidacho, Moriyama City, Shiga Prefecture (72) Inventor Naofumi Suzuki 280-93, Harimata-cho, Moriyama-shi, Shiga Prefecture F-term (reference) AC06 AC07 AF04 AG01 AH02 AH03
Claims (7)
エステルを含む単量体組成物を重合して得られた低比誘
電性高分子材料。1. A low dielectric constant polymer material obtained by polymerizing a monomer composition containing an epoxy group-containing fumaric acid diester as a monomer.
が、下記式(I)で表されるフマル酸ジエステルである
ことを特徴とする請求項1記載の低比誘電性高分子材
料。 【化1】 2. The low dielectric constant polymer material according to claim 1, wherein the epoxy group-containing fumaric acid diester is a fumaric acid diester represented by the following formula (I). Embedded image
が、下記式(II)及び/又は式(III)で表されるフマ
ル酸ジエステルであることを特徴とする請求項1記載の
低比誘電性高分子材料。 【化2】 3. The low dielectric constant of claim 1, wherein the epoxy group-containing fumaric diester is a fumaric diester represented by the following formula (II) and / or (III). Molecular material. Embedded image
で表されるフマル酸エステル系単量体を含むことを特徴
とする請求項1〜3のいずれか1項に記載の低比誘電性
高分子材料。 【化3】 (式中、R3はアルキル基またはシクロアルキル基を表
わし、R4はアルキル基、シクロアルキル基またはアリ
ール基を表わし、R3およびR4は同一でも異なるもの
であっても良い。)4. The method according to claim 1, wherein the monomer composition further comprises the following formula (IV):
The low dielectric constant polymer material according to any one of claims 1 to 3, further comprising a fumaric acid ester monomer represented by the following formula: Embedded image (In the formula, R 3 represents an alkyl group or a cycloalkyl group, R 4 represents an alkyl group, a cycloalkyl group, or an aryl group, and R 3 and R 4 may be the same or different.)
比誘電性高分子材料からなるフィルム。5. A film comprising the low dielectric constant polymer material according to claim 1.
比誘電性高分子材料を用いてなる基板。6. A substrate made of the low dielectric constant polymer material according to claim 1.
比誘電性高分子材料を用いてなる電子部品。7. An electronic component using the low dielectric constant polymer material according to claim 1.
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WO2009107699A1 (en) * | 2008-02-28 | 2009-09-03 | 積水化学工業株式会社 | Curable epoxy composition, anisotropic conductive material and connection structure |
WO2009116618A1 (en) * | 2008-03-21 | 2009-09-24 | 積水化学工業株式会社 | Curable composition, anisotropic conductive material and connection structure |
JP2013137422A (en) * | 2011-12-28 | 2013-07-11 | Tosoh Corp | Transparent plastic film substrate for display |
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2000
- 2000-11-14 JP JP2000347181A patent/JP2002145940A/en active Pending
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WO2009107699A1 (en) * | 2008-02-28 | 2009-09-03 | 積水化学工業株式会社 | Curable epoxy composition, anisotropic conductive material and connection structure |
JP4473341B2 (en) * | 2008-02-28 | 2010-06-02 | 積水化学工業株式会社 | Curable epoxy composition, anisotropic conductive material, and connection structure |
JPWO2009107699A1 (en) * | 2008-02-28 | 2011-07-07 | 積水化学工業株式会社 | Curable epoxy composition, anisotropic conductive material, and connection structure |
KR101329887B1 (en) | 2008-02-28 | 2013-11-18 | 세키스이가가쿠 고교가부시키가이샤 | Curable epoxy composition, anisotropic conductive material and connection structure |
TWI449720B (en) * | 2008-02-28 | 2014-08-21 | Sekisui Chemical Co Ltd | A hardened epoxy composition, an anisotropic conductive material, and a continuous structure |
WO2009116618A1 (en) * | 2008-03-21 | 2009-09-24 | 積水化学工業株式会社 | Curable composition, anisotropic conductive material and connection structure |
JP4472779B2 (en) * | 2008-03-21 | 2010-06-02 | 積水化学工業株式会社 | Curable composition, anisotropic conductive material, and connection structure |
JPWO2009116618A1 (en) * | 2008-03-21 | 2011-07-21 | 積水化学工業株式会社 | Curable composition, anisotropic conductive material, and connection structure |
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