JP2002131781A - Active matrix type liquid crystal display device - Google Patents

Active matrix type liquid crystal display device

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Publication number
JP2002131781A
JP2002131781A JP2000326814A JP2000326814A JP2002131781A JP 2002131781 A JP2002131781 A JP 2002131781A JP 2000326814 A JP2000326814 A JP 2000326814A JP 2000326814 A JP2000326814 A JP 2000326814A JP 2002131781 A JP2002131781 A JP 2002131781A
Authority
JP
Japan
Prior art keywords
electrode
liquid crystal
common
pixel
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000326814A
Other languages
Japanese (ja)
Other versions
JP3471737B2 (en
Inventor
Kazuhiro Takeda
和弘 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Kagoshima Ltd
NEC Kagoshima Ltd
Original Assignee
Nippon Electric Kagoshima Ltd
NEC Kagoshima Ltd
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Filing date
Publication date
Application filed by Nippon Electric Kagoshima Ltd, NEC Kagoshima Ltd filed Critical Nippon Electric Kagoshima Ltd
Priority to JP2000326814A priority Critical patent/JP3471737B2/en
Publication of JP2002131781A publication Critical patent/JP2002131781A/en
Application granted granted Critical
Publication of JP3471737B2 publication Critical patent/JP3471737B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an active matrix type liquid crystal display device, which is a horizontal field type and adopts a chevron-like electrode structure, permitting to decrease discrimination near the apex of a chevron-like electrode. SOLUTION: To decrease discrimination areas which have conventionally occurred in the neighborhood of the apexes of the chevron-like electrodes, a transparent common auxiliary electrode 32 and a pixel auxiliary electrode 47 are formed so as to connect the apex parts of the chevrons of the common electrode 22 and the pixel electrode 27, and thus, it has become possible to decrease the discrimination and increase the opening ratio.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、アクティブマトリ
クス型液晶表示装置に関し、特に、インプレーンスイッ
チング(IPS:In−Plane−Switchin
g)型の液晶表示装置の構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, and more particularly to an in-plane switching (IPS).
g) The structure of the liquid crystal display device.

【0002】[0002]

【従来の技術】インプレーンスイッチング(IPS:I
n−Plane−Switching)型の液晶表示装
置の表示パネルは、一対の透明基板の間の所定の間隔に
液晶を挟持し、基板に対して実効的に平行な電界を印加
することによって液晶分子を基板面内と水平方向に回転
することで、広視野角を達成できるという特徴を有して
いる。ここで、基板に対して実効的に平行な電界は、液
晶を挟持する透明基板の一方に画素電極と共通電極を所
定の間隔を設けて櫛歯状に配置することにより発生させ
ることができる。ゆえに、IPS型のLCDにおいては
常に液晶分子の短軸方向からのみディスプレイ表示を見
ることになるため、視野角が非常に広いという利点を有
する。
2. Description of the Related Art In-plane switching (IPS: I
2. Description of the Related Art A display panel of an n-plane-switching type liquid crystal display device has a structure in which liquid crystal is sandwiched between a pair of transparent substrates at a predetermined interval, and an electric field that is effectively parallel to the substrates is applied to form a liquid crystal molecule. It has the feature that a wide viewing angle can be achieved by rotating horizontally in the plane of the substrate. Here, the electric field that is effectively parallel to the substrate can be generated by arranging the pixel electrode and the common electrode on one of the transparent substrates sandwiching the liquid crystal in a comb-tooth shape with a predetermined interval. Therefore, in the IPS type LCD, since the display display is always viewed only from the short axis direction of the liquid crystal molecules, there is an advantage that the viewing angle is very wide.

【0003】上記のように、IPS型のLCDは、視野
角が非常に広いという利点を有する一方、櫛歯状の電極
の長手方向から画面を傾けて眺めたときに、黄色又は青
色に色付くという欠点も有している。この問題を解決す
るために、特開平10−148826号公報がくの字状
の電極構造(マルチドメイン構造)を提案している。
As described above, the IPS type LCD has an advantage that the viewing angle is very wide, but it is colored yellow or blue when the screen is tilted and viewed from the longitudinal direction of the comb-shaped electrode. It also has disadvantages. To solve this problem, Japanese Unexamined Patent Application Publication No. 10-148826 proposes a U-shaped electrode structure (multi-domain structure).

【0004】この電極構造を図4に示す。図4(a)に
示すように、共通電極122は、くの字状の電極部分と
画素中央部及び周辺を横断する電極部分から成ってお
り、画素中央部を横断する電極部分の上下の領域に対応
する液晶が、電圧印加時にくの字状の電極の長手方向か
ら画面を傾けて眺めたときに、それぞれ黄色及び青色に
色付くために視角に対する色変化を互いに補償し合うこ
ととなり、色変わりのない画像を得ることができる。
FIG. 4 shows this electrode structure. As shown in FIG. 4A, the common electrode 122 includes a U-shaped electrode portion and an electrode portion traversing the central portion and the periphery of the pixel, and a region above and below the electrode portion traversing the central portion of the pixel. When the liquid crystal corresponding to, when viewing the screen at an angle from the longitudinal direction of the U-shaped electrode when applying a voltage, the colors change with respect to the viewing angle because they are colored yellow and blue, respectively. No images can be obtained.

【0005】[0005]

【発明が解決しようとする課題】特開平10−1488
26号公報が示すくの字状の電極構造から光の透過率を
低下させる原因となる画素中央部を横断する共通電極を
取り去って、図2(a)に示すような電極構造とした場
合、電圧印加時に、電界が画素電極227のくの字の頂
点に集中すると共に、液晶を回転させる力が基板に平行
な面内で右回転、左回転の両方に掛かり、液晶が回転で
きなくなり、ディスクリネーションの原因となる。ま
た、画素電極227及び共通電極222が、分割露光に
よるマスクパターンを用いて形成される場合に、互いに
対向する方向からずれてしまって液晶218が正常な配
向方向からずれてしまい、ディスクリネーションの位置
及び面積が微妙に変化し、分割露光部境界線に沿って、
画面上に線状の表示ムラが発生してしまう。また、共通
電極222のくの字の頂点を中心とした左右の領域で
は、液晶218の駆動方向が反対になるので、液晶21
8の位置によって液晶の向きが急激に変わるという非常
に敏感な構成となってしまう。
Problems to be Solved by the Invention
In the case where the common electrode crossing the central portion of the pixel, which causes a decrease in light transmittance, is removed from the dogleg-shaped electrode structure disclosed in Japanese Patent Publication No. 26-26, and the electrode structure shown in FIG. When a voltage is applied, the electric field concentrates on the apex of the square of the pixel electrode 227, and the force for rotating the liquid crystal is applied to both the right and left rotations in a plane parallel to the substrate, so that the liquid crystal cannot be rotated. It causes religion. Further, when the pixel electrode 227 and the common electrode 222 are formed using the mask pattern by the divided exposure, the liquid crystal 218 shifts from a direction facing each other and shifts from a normal alignment direction. The position and area slightly change, and along the dividing exposure part boundary line,
Linear display unevenness occurs on the screen. In the left and right regions around the apex of the square of the common electrode 222, the driving directions of the liquid crystal 218 are opposite.
This is a very sensitive configuration in which the direction of the liquid crystal changes abruptly depending on the position of 8.

【0006】上記問題を緩和するために、図4(a)に
示すような特開平10−148826号公報の電極構造
が採られるのであるが、くの字の頂点を結ぶようにして
光を遮断する共通配線を画素中央部に敷くと、光の透過
率が8%から3〜5%程度低下してしまう。
In order to alleviate the above problem, an electrode structure disclosed in Japanese Patent Application Laid-Open No. H10-148826 as shown in FIG. 4A is employed. If the common wiring is placed in the center of the pixel, the light transmittance is reduced from 8% to about 3 to 5%.

【0007】また、図4(b)の拡大平面図に示すよう
に、電圧無印加時にデータ線に平行に向いていた液晶1
18は、電極間に電圧を印加したときに、画素電極12
7及び共通電極122が互いに対向する方向に一様に向
きを変えるのであるが、図4(a)に示すように、くの
字の頂点近傍及び画素周辺を横断する電極近傍で対向す
る領域Yにおいては、画素電極127及び共通電極12
2が互いに対向する形状となっておらず、しかも、同じ
画素電極127、或いは、同じ共通電極122が鋭角に
領域Yを挟む形となっており、領域Yにおける液晶にか
かる電界が所望の電界とならず、液晶が画素電極127
及び共通電極122が互いに対向する方向に向かずに中
途半端な向きを示し、領域Yにおいてディスクリネーシ
ョンが発生する。
Further, as shown in the enlarged plan view of FIG. 4B, the liquid crystal 1 oriented parallel to the data line when no voltage is applied.
Reference numeral 18 denotes a pixel electrode 12 when a voltage is applied between the electrodes.
7 and the common electrode 122 change their directions uniformly in the direction in which they face each other. As shown in FIG. , The pixel electrode 127 and the common electrode 12
2 are not opposed to each other, and the same pixel electrode 127 or the same common electrode 122 sandwiches the region Y at an acute angle. Instead, the liquid crystal is the pixel electrode 127
In addition, the common electrode 122 does not face in a direction facing each other and shows a halfway direction, and disclination occurs in the region Y.

【0008】さらに、図2(a)に示すようなくの字状
の電極を形成する場合、通常、大型モニターに対する露
光では露光装置の露光範囲に限界があるため、電極パタ
ーン形成のための露光は分割露光法で行う。このため、
ディスクリネーションは任意の部分には出ず、露光装置
の露光ズレにより、分割露光する境界部分、即ち、くの
字の頂点をつないだ直線部分に一様に表示画質にムラが
出る。その結果、分割露光部に線が出て画面不良にな
る。画面不良の原因は、図5(b)のくの字状の頂点近
傍の共通電極222及び画素電極227を拡大した平面
図に示すように、分割部分でのパターンズレ(1μm程
度)が起因で発生する。精度良く分割露光されると図5
(a)のように電極パターンが形成され、ディスクリネ
ーションが画素電極227のくの字の頂点近傍でほぼ紙
面に向かって上下対称に発生する。一方、図5(b)の
ように、分割露光の重ね合わせずれが紙面に向かって下
方に生じた場合、電界強度は電極間距離に依存し、パタ
ーン重ねズレはこの電極間隔を変化させてしまうので、
重ねズレ部分のみ電界の掛かり方が不均一になり、特
に、電界の集中する画素電極227のくの字の頂点から
共通電極227の電極間隔が広くなった部分に対する電
界領域においてディスクリネーションが移動して発生す
る現象が見られ、表示画面に線状ムラを発生させてしま
う。
[0008] Further, in the case of forming a U-shaped electrode as shown in FIG. 2 (a), the exposure for forming an electrode pattern is usually limited because the exposure range of an exposure apparatus is limited when exposing a large monitor. This is performed by a division exposure method. For this reason,
The disclination does not appear at an arbitrary portion, and the display image quality becomes uneven uniformly at a boundary portion to be divided and exposed, that is, at a straight line portion connecting the vertices of the square, due to an exposure shift of the exposure device. As a result, a line appears on the divided exposure portion, resulting in a screen defect. The screen defect is caused by a pattern shift (about 1 μm) at a divided portion as shown in an enlarged plan view of the common electrode 222 and the pixel electrode 227 near the apex of the V-shape in FIG. 5B. appear. Figure 5
(A), an electrode pattern is formed, and disclination occurs vertically symmetrically in the vicinity of the apex of the pixel electrode 227 toward the paper surface. On the other hand, as shown in FIG. 5B, when the overlay shift of the divided exposure occurs downward toward the paper surface, the electric field strength depends on the distance between the electrodes, and the pattern overlay shift changes the electrode interval. So
The manner in which the electric field is applied becomes non-uniform only in the overlap deviation part, and in particular, disclination moves in the electric field region from the vertex of the square of the pixel electrode 227 where the electric field is concentrated to the part where the electrode interval of the common electrode 227 is widened. Occurs, and linear unevenness occurs on the display screen.

【0009】本発明の目的は、横電界型でくの字状の電
極構造を採るアクティブマトリクス型液晶表示装置にお
いて、くの字状の電極の頂点近傍でのディスクリネーシ
ョンを低減することのできるアクティブマトリクス型液
晶表示装置を提供することにある。
An object of the present invention is to reduce disclination near the apex of a U-shaped electrode in an active matrix type liquid crystal display device employing a horizontal electric field type and a U-shaped electrode structure. An object of the present invention is to provide an active matrix type liquid crystal display device.

【0010】[0010]

【課題を解決するための手段】本発明のアクティブマト
リクス型液晶表示装置は、第1基板の上に設けられた共
通配線及びソース・ドレイン配線と、前記第1基板の上
にあって前記共通配線及び前記ソース・ドレイン配線を
覆うTFT側絶縁膜及びその上の配向膜とを有するTF
T基板と、第2基板の上に設けられた色層と、前記第2
基板の上にあって前記色層を覆うカラーフィルタ側絶縁
膜及びその上の配向膜とを有するカラーフィルタ基板
と、前記TFT基板及び前記カラーフィルタ基板に狭持
される液晶とを備え、前記共通配線及び前記ソース・ド
レイン配線は、互いに概略等間隔で並走する少なくとも
一つのくの字を含むジグザグ線の形状を呈するそれぞれ
共通電極及び画素電極を有しており、前記共通電極と前
記画素電極との間に電圧を印加して電界を発生させるこ
とにより前記液晶を前記第1基板の表面と概略平行な平
面内で回転させるアクティブマトリクス型液晶表示装置
であって、前記共通電極及び前記画素電極は、それぞれ
くの字の頂点部に前記電界と平行な方向に設けられ、か
つ、それぞれ前記共通電極及び前記画素電極と接続する
それぞれ共通補助電極及び画素補助電極を有する構成を
基本構成としている。本発明のアクティブマトリクス型
液晶表示装置は、以下のような適用形態を採る。
According to the present invention, there is provided an active matrix type liquid crystal display device comprising a common wiring and a source / drain wiring provided on a first substrate, and the common wiring provided on the first substrate. Having a TFT-side insulating film covering the source / drain wiring and an alignment film thereon
A T substrate; a color layer provided on the second substrate;
A color filter substrate having a color filter-side insulating film on the substrate and covering the color layer and an alignment film thereon; and a liquid crystal sandwiched between the TFT substrate and the color filter substrate. The wiring and the source / drain wiring have a common electrode and a pixel electrode each having a zigzag line shape including at least one L-shape parallel to each other at substantially equal intervals, and the common electrode and the pixel electrode An active matrix liquid crystal display device that rotates the liquid crystal in a plane substantially parallel to the surface of the first substrate by applying a voltage between the common electrode and the pixel electrode. Are provided at the apexes of the U-shape in a direction parallel to the electric field, and are connected to the common electrode and the pixel electrode, respectively. And it is constituted basically a configuration having a pixel auxiliary electrode. The active matrix type liquid crystal display device of the present invention employs the following application modes.

【0011】まず、前記画素電極は前記TFT側絶縁膜
中にあって、前記共通電極よりも前記液晶側に位置し、
前記共通補助電極及び前記画素補助電極は、それぞれ前
記共通電極及び前記画素電極の上のTFT側絶縁膜を開
口して設けられたそれぞれ第1開口部及び第2開口部を
通してそれぞれ前記共通電極及び前記画素電極に接続さ
れる。
First, the pixel electrode is located in the insulating film on the TFT side and is located closer to the liquid crystal than the common electrode.
The common auxiliary electrode and the pixel auxiliary electrode are respectively provided through a first opening and a second opening provided by opening a TFT-side insulating film on the common electrode and the pixel electrode, respectively. Connected to pixel electrode.

【0012】また、前記共通補助電極及び前記画素補助
電極は、前記TFT側絶縁膜の表面を前記電界と平行
で、かつ、くの字の突き出た方向に延在して設けられ、
前記共通補助電極及び前記画素補助電極は、それぞれ前
記画素電極及び前記共通電極に一部重なって設けられ
る。
The common auxiliary electrode and the pixel auxiliary electrode are provided so as to extend on the surface of the TFT-side insulating film in parallel with the electric field and in a direction in which the U-shape protrudes.
The common auxiliary electrode and the pixel auxiliary electrode are provided to partially overlap the pixel electrode and the common electrode, respectively.

【0013】また、前記共通電極は、前記画素電極に挟
まれない領域においては、くの字の抜きパターンの形状
を呈する。
The common electrode has a U-shaped pattern in a region not sandwiched between the pixel electrodes.

【0014】また、前記共通電極は、前記画素電極に挟
まれた共通電極のくの字端部を前記電界と平行な方向に
連結すべく設けられる。
Further, the common electrode is provided so as to connect the V-shaped end of the common electrode sandwiched between the pixel electrodes in a direction parallel to the electric field.

【0015】最後に、前記共通補助電極及び前記画素補
助電極は、共に透明導電膜からなる。
Finally, both the common auxiliary electrode and the pixel auxiliary electrode are made of a transparent conductive film.

【0016】[0016]

【発明の実施の形態】次に、本発明の第1の実施形態の
アクティブマトリクス型液晶表示装置について、図1を
参照して説明する。ここで、図1(a)は、TFT基板
を液晶側から眺めた平面図であり、図1(b)は、図1
(a)における切断線A−A’を通りTFT基板に直交
する平面でTFT基板、液晶、CF(カラーフィルタ)
基板を切断したときの断面図である。本実施形態のアク
ティブマトリクス型液晶表示装置は横電界型の液晶表示
装置であり、構成は従来の技術の説明で用いた図と同じ
であるのでここでは詳細な説明は省略し、従来と異なる
構成に焦点を当てて説明することとする。なお、従来と
同じ素子に関しては、従来の図示番号の百番台の番号か
ら1を取り除いた番号を付している。
Next, an active matrix liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIG. Here, FIG. 1A is a plan view of the TFT substrate viewed from the liquid crystal side, and FIG.
TFT substrate, liquid crystal, CF (color filter) on a plane passing through the cutting line AA 'in FIG.
It is sectional drawing when cutting a board | substrate. The active matrix type liquid crystal display device of the present embodiment is a horizontal electric field type liquid crystal display device, and the configuration is the same as that used in the description of the conventional technology, so that the detailed description is omitted here, and the configuration is different from the conventional one. The description will focus on. Note that the same elements as those in the related art are denoted by numbers obtained by removing 1 from the numbers in the hundreds of the conventional illustrated numbers.

【0017】図1(a)に示すように、本実施形態の特
徴は、くの字状の共通電極22及び画素電極27のくの
字の頂上部分にそれぞれ共通補助電極32及び画素補助
電極37がそれぞれ共通電極22及び画素電極27と接
続されて形成され、さらに、くの字の突き出た方向に延
在し、その端部がそれぞれ画素電極27及び共通電極2
2と重なるように形成されている。
As shown in FIG. 1A, the feature of this embodiment is that a common auxiliary electrode 32 and a pixel auxiliary electrode 37 are provided at the tops of the U-shaped common electrode 22 and the pixel electrode 27, respectively. Are formed to be connected to the common electrode 22 and the pixel electrode 27, respectively, and extend in the protruding direction of the U-shape.
2 is formed.

【0018】次に、共通補助電極32及び画素補助電極
37を形成する製造方法について、主に図1(b)を参
照して説明する。
Next, a method of forming the common auxiliary electrode 32 and the pixel auxiliary electrode 37 will be described mainly with reference to FIG.

【0019】平面サイズが360×465、厚さが0.
7(単位mm)のガラス基板からなる第1透明基板1の
上に、まず、ゲート配線2及び共通電極22を形成す
る。ゲート配線2及び共通電極22は、第1透明基板1
の上にスパッタ装置にて200nmのCr膜を成膜した
後、ポジレジスト膜を塗布し、露光、現像、エッチング
を行うことにより形成される。
The plane size is 360 × 465 and the thickness is 0.3 mm.
First, a gate wiring 2 and a common electrode 22 are formed on a first transparent substrate 1 made of a 7 (unit mm) glass substrate. The gate wiring 2 and the common electrode 22 are formed on the first transparent substrate 1.
A 200 nm Cr film is formed thereon by a sputtering device, and then a positive resist film is applied, and the film is exposed, developed, and etched.

【0020】次に、200nmの第1絶縁膜3、100
nmのa−Si(アモルファスシリコン)層を成膜し、
a−Si層をパターニングしてa−Si領域6を形成す
る。続いて、a−Si領域6を覆って第1絶縁膜3の上
にCr等の金属を200nmの膜厚に堆積し、パターニ
ングしてSD電極(ソース・ドレイン電極のことを指
し、以下、SD電極と略記する)7、SD電極7と同時
に形成される画素電極27及びデータ線37を形成す
る。この後、SD電極7をマスクとしてa−Si領域6
をその表面から一部エッチングしてTFTのチャネル部
を形成する。ここで、共通電極22及び画素電極27
は、図1(a)に示すように、くの字状に形成され、互
いに平行して形成される。
Next, the first insulating films 3 and 100 having a thickness of 200 nm are formed.
a-Si (amorphous silicon) layer of nm
The a-Si layer is patterned to form an a-Si region 6. Subsequently, a metal such as Cr is deposited to a thickness of 200 nm on the first insulating film 3 so as to cover the a-Si region 6, and is patterned to form an SD electrode (source / drain electrode; A pixel electrode 27 and a data line 37 which are formed simultaneously with the SD electrode 7. Thereafter, the a-Si region 6 is formed using the SD electrode 7 as a mask.
Is partially etched from the surface to form a channel portion of the TFT. Here, the common electrode 22 and the pixel electrode 27
As shown in FIG. 1 (a), are formed in a V shape and are formed in parallel with each other.

【0021】次に、SD電極7等を覆って第1絶縁膜3
の上にシリコン窒化膜(SiNx)等からなる保護膜8
を堆積し、続いて、保護膜8及び第1絶縁膜3の所定の
領域を開口してコンタクトホール9を形成する。このと
き、コンタクトホール9は、共通電極22及び画素電極
27のくの字の頂上部において開口される。
Next, the first insulating film 3 covering the SD electrode 7 and the like is formed.
Protective film 8 made of silicon nitride (SiNx) or the like
Then, predetermined regions of the protective film 8 and the first insulating film 3 are opened to form a contact hole 9. At this time, the contact hole 9 is opened at the top of the square of the common electrode 22 and the pixel electrode 27.

【0022】次に、コンタクトホール9の形成された保
護膜8の上にITOを50nmの厚さに成膜し、パター
ニングして共通補助電極32及び画素補助電極37を形
成する。第1透明基板1の他方の面上に偏光板10を形
成するとTFT基板40が得られる。
Next, a 50 nm-thick ITO film is formed on the protective film 8 on which the contact hole 9 is formed, and is patterned to form the common auxiliary electrode 32 and the pixel auxiliary electrode 37. When the polarizing plate 10 is formed on the other surface of the first transparent substrate 1, a TFT substrate 40 is obtained.

【0023】TFT基板40に対向するCF基板50に
は、第2透明基板51及び第2透明基板51の一方の面
上のブラックマトリクス61、色層63、シリコン窒化
膜(SiNx)等からなる第2絶縁膜64と、第2透明
基板51の他方の面上の導電膜65、偏光板66とが形
成される。
On the CF substrate 50 opposed to the TFT substrate 40, a second transparent substrate 51 and a black matrix 61, a color layer 63, and a silicon nitride film (SiNx) on one surface of the second transparent substrate 51 are formed. The two insulating films 64, the conductive film 65 on the other surface of the second transparent substrate 51, and the polarizing plate 66 are formed.

【0024】このようにして得られたTFT基板40及
びCF基板50のそれぞれの基板の最上層の表面に、オ
フセット印刷等による方法で配向膜を印刷することによ
り、TFT基板40及びCF基板50が完成する。
The TFT substrate 40 and the CF substrate 50 are formed by printing an alignment film on the uppermost surface of each of the TFT substrate 40 and the CF substrate 50 obtained as described above by a method such as offset printing. Complete.

【0025】こうして得られたTFT基板40とCF基
板50の配向膜をラビングにより配向膜17として、所
定の方向に配向膜分子を並べ、この2枚の基板が所定の
間隔を持つようにセルギャップ材を挟みこませて組み合
わせ、その間隙に液晶18を封止する。
The alignment films of the TFT substrate 40 and the CF substrate 50 thus obtained are rubbed as an alignment film 17, and alignment film molecules are arranged in a predetermined direction, and the cell gap is set so that the two substrates have a predetermined interval. The liquid crystal 18 is sealed in the gap between the materials.

【0026】このようにして得られた液晶パネルは、ラ
ビング方法により規定した液晶18の配向方向にTFT
基板40の偏光板10の透過軸を一致させ、かつ、CF
基板50にはTFT基板40側と吸収軸を直交させた偏
光板66を貼り合わせ、光56をTFT基板40側から
照射し、画素電極27と共通電極22との間に自在に電
位差を与えることで、黒表示から白表示までのフルカラ
ー表示を行うことができる。
The liquid crystal panel obtained in this manner has a TFT in the alignment direction of the liquid crystal 18 defined by the rubbing method.
The transmission axis of the polarizing plate 10 of the substrate 40 is made coincident, and CF
A polarizing plate 66 whose absorption axis is orthogonal to that of the TFT substrate 40 is attached to the substrate 50, and light 56 is irradiated from the TFT substrate 40 side to freely give a potential difference between the pixel electrode 27 and the common electrode 22. Thus, full-color display from black display to white display can be performed.

【0027】次に、本実施形態の従来例との違いの詳細
について説明する。従来の構成と異なるのは2箇所あ
る。
Next, details of the difference between the present embodiment and the conventional example will be described. There are two different points from the conventional configuration.

【0028】まず第1に、従来、TFT基板40側の第
1透明基板1の周辺部の導通を取るために使用していた
ITO膜を画素内部に使用し、共通電極22及び画素電
極27の補助電極としての共通補助電極32及び画素補
助電極37として用いている。共通補助電極32及び画
素補助電極37を共通電極22及び画素電極27の補助
電極として用いているため、くの字状の共通電極22及
び画素電極27のくの字の頂上部近傍における電界の乱
れを共通補助電極32及び画素補助電極37により修正
し、電界の乱れを防止している。その結果、従来の電極
構造ではディスクリネーション(液晶配向異常)により
正常な向きに液晶を駆動することが出来ないエリアだっ
た部分の駆動を可能にした。
First, an ITO film, which has conventionally been used to conduct the peripheral portion of the first transparent substrate 1 on the TFT substrate 40 side, is used inside the pixel, and the common electrode 22 and the pixel electrode 27 are formed. They are used as a common auxiliary electrode 32 as an auxiliary electrode and a pixel auxiliary electrode 37. Since the common auxiliary electrode 32 and the pixel auxiliary electrode 37 are used as auxiliary electrodes for the common electrode 22 and the pixel electrode 27, the electric field is disturbed in the vicinity of the top of the U-shaped common electrode 22 and the pixel electrode 27. Are corrected by the common auxiliary electrode 32 and the pixel auxiliary electrode 37 to prevent disturbance of the electric field. As a result, it has become possible to drive a portion where the liquid crystal cannot be driven in a normal direction due to disclination (abnormal liquid crystal alignment) in the conventional electrode structure.

【0029】次に第2に、特開平10−148826号
公報にみられる構造では、中央に電界方向と平行な方向
に共通電極122を通していたが、本実施形態では、く
の字状の共通電極22及び画素電極27のくの字の頂上
部近傍における電界の乱れを透明導電膜の共通補助電極
32及び画素補助電極37により防止する構造としたの
で、本実施形態の共通電極22は素子周辺の液晶駆動で
きないエリアに配線領域を移すことができ、従来のパネ
ル透過率5%以下(共通電極22から構成される下層配
線部はCr膜なので光りが通らない。)であったのを、
8%以上に改善することができた。
Second, in the structure disclosed in Japanese Patent Application Laid-Open No. H10-148826, the common electrode 122 is passed through the center in a direction parallel to the direction of the electric field. Since the electric field is prevented from being disturbed by the common auxiliary electrode 32 and the pixel auxiliary electrode 37 made of a transparent conductive film, the common electrode 22 in the present embodiment has a structure in which the electric field in the vicinity of the top of the square of the pixel electrode 27 and the pixel electrode 27 is prevented. The wiring area can be moved to an area where the liquid crystal cannot be driven, and the conventional panel transmittance is 5% or less (light does not pass through because the lower wiring portion composed of the common electrode 22 is a Cr film).
It was improved to 8% or more.

【0030】本発明の電極構造を用いると、電極間の電
界ON、OFF時の液晶駆動の様子は図2に示した通り
改善される。即ち、従来、電圧印加時にくの字の頂点付
近の液晶に、図2(a)のように、回転させることがで
きない領域Xが生じていたのに対して、本発明の電極構
造を用いると、図2(b)に示すように、領域Xの内、
画素補助電極32(又は共通補助47)の直上以外の領
域X1及び領域X2の液晶を駆動できるようになる。そ
の結果、表示範囲が拡大され画像がハッキリ表示可能と
なり、画面も透過率が上がって明るい画面表示ができ
る。
When the electrode structure of the present invention is used, the state of driving the liquid crystal when the electric field between the electrodes is turned on and off is improved as shown in FIG. In other words, while a region X that cannot be rotated has conventionally been generated in the liquid crystal near the apex of a square when a voltage is applied as shown in FIG. 2A, the use of the electrode structure of the present invention. , As shown in FIG.
The liquid crystal in the regions X1 and X2 other than immediately above the pixel auxiliary electrode 32 (or the common auxiliary 47) can be driven. As a result, the display range is enlarged, the image can be clearly displayed, and the screen also has a high transmittance, and a bright screen can be displayed.

【0031】また、2番目の効果として、実際の量産で
の問題となる露光時に発生するパターンズレを補償する
ことができる。詳細を説明すると、露光は大型モニター
では露光範囲に限界が有る。そのため、分割で露光を行
うのでディスクリネーションは任意の部分には出ず、露
光装置のマスク限界により、分割露光する境界部分、即
ち、くの字の頂点をつないだ直線部分に一様に表示画質
にムラが出る。その結果、分割露光部に線が出て画面不
良になっている(現在20%程度発生)。画面不良の原
因は、分割部分でのパターンズレ(1μm程度)が起因
で発生しており、本発明のITO補助電極パターンは、
分割のパターンズレ(1μm)よりも太い2μmの配線
とすることでパターンズレをカバーし、露光分割境界部
分でパターンズレが発生しても表示不良を発生させない
ことができる、という効果を発揮する。
As a second effect, it is possible to compensate for a pattern shift occurring at the time of exposure, which is a problem in actual mass production. More specifically, the exposure range of a large monitor is limited. Therefore, the disclination does not appear in an arbitrary part because the exposure is performed in divisions, and is uniformly displayed on the boundary part of the divisional exposure, that is, the straight line part connecting the vertices of the square, due to the mask limit of the exposure device. Image quality is uneven. As a result, a line appears on the divided exposure portion and the screen becomes defective (currently, about 20% occurs). The screen defect is caused by a pattern shift (about 1 μm) at the divided portion. The ITO auxiliary electrode pattern of the present invention is
By using a wiring of 2 μm thicker than the divisional pattern shift (1 μm), the pattern shift can be covered, and the display defect can be prevented even if the pattern shift occurs at the boundary between the exposure divisions.

【0032】さらに、3番目の効果として、下層のCr
膜で構成する共通電極は反射率95%のCr膜で構成し
ているので光を透過しない。そのため、パネル(TFT
基板+液晶材+CF基板)状態での透過率が低くなって
しまう。そこで、従来、画素中央部を横断して配線され
ていた共通電極を画素中央部から画素周辺部へ移動し、
透過率を改善することができた。これも、従来の構造で
は、画素中央部に共通電極を横断させることにより電界
の乱れを防いでいるので、画素中央部の共通電極を取り
除くことができないのであるが、本発明では、画素中央
部の共通電極を透明電極により形成しているので遮光性
の共通電極を取り除くことができる。
Further, as a third effect, the lower layer Cr
The common electrode composed of a film does not transmit light because it is composed of a Cr film having a reflectance of 95%. Therefore, the panel (TFT
The transmittance in the state of (substrate + liquid crystal material + CF substrate) is reduced. Therefore, the common electrode, which was conventionally wired across the center of the pixel, is moved from the center of the pixel to the periphery of the pixel,
The transmittance could be improved. Again, in the conventional structure, the electric field is prevented from being disturbed by traversing the common electrode in the center of the pixel, so that the common electrode in the center of the pixel cannot be removed. Is formed of a transparent electrode, the light-shielding common electrode can be removed.

【0033】次に、本発明の第2の実施形態を図3を参
照して説明する。本実施形態における断面構造は、第1
の実施形態と同じであるので、図3には、TFT基板側
の平面図のみを示している。
Next, a second embodiment of the present invention will be described with reference to FIG. The cross-sectional structure in the present embodiment is the first structure.
Therefore, FIG. 3 shows only a plan view of the TFT substrate side.

【0034】図3に示すように、本実施形態の特徴は、
くの字状の共通電極72及び画素電極77のくの字の頂
上部分にそれぞれ共通補助電極82及び画素補助電極8
7がくの字の突き出た方向に延在して形成され、その端
部がそれぞれ画素電極77及び共通電極72と重なるよ
うに形成されている。
As shown in FIG. 3, the features of this embodiment are as follows.
The common auxiliary electrode 82 and the pixel auxiliary electrode 8 are respectively provided on the tops of the U-shaped common electrode 72 and the pixel electrode 77.
7 is formed to extend in the direction in which the U-shape protrudes, and its ends are formed so as to overlap the pixel electrode 77 and the common electrode 72, respectively.

【0035】第1の実施形態の説明から、くの字状の電
極が概略同じ面積であれば透過率は第1の実施形態から
変化は無いので、くの字を図3に示す様に複数設けても
良いことになる。そこで、この利点を生かし1素子内に
多数のくの字部をつないでジグザグ線状に設けて、ドッ
トの見え方を高精細化する構成に対しても、本発明を適
用できる。
From the description of the first embodiment, if the U-shaped electrodes have substantially the same area, the transmittance does not change from that of the first embodiment. It may be provided. Therefore, the present invention can be applied to a configuration in which a large number of U-shaped portions are connected in one element and provided in a zigzag line shape to improve the visibility of dots by taking advantage of this advantage.

【0036】[0036]

【発明の効果】本発明による横電界型でくの字状の電極
構造を採るアクティブマトリクス型液晶表示装置におい
ては、くの字状の電極の頂点近傍で従来生じていたディ
スクリネーションの領域を減らすために、透明な補助電
極を共通電極及び画素電極のくの字の頂点部を結ぶよう
にして形成しており、ディスクリネーションを低減する
と共に、開口率を大きくすることが可能となった。
In the active matrix type liquid crystal display device employing the horizontal electric field type U-shaped electrode structure according to the present invention, the area of the disclination which has conventionally occurred near the apex of the U-shaped electrode is reduced. In order to reduce the number, transparent auxiliary electrodes are formed so as to connect the vertices of the squares of the common electrode and the pixel electrode, so that disclination can be reduced and the aperture ratio can be increased. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態を説明するためのアク
ティブマトリクス型液晶表示装置のTFT基板の平面図
及び液晶パネルの断面図である。
FIG. 1 is a plan view of a TFT substrate and a cross-sectional view of a liquid crystal panel of an active matrix liquid crystal display device for explaining a first embodiment of the present invention.

【図2】本発明の第1の実施形態におけるディスクリネ
ーションの改善状況を説明するための拡大平面図であ
る。
FIG. 2 is an enlarged plan view for explaining a state of improvement of disclination in the first embodiment of the present invention.

【図3】本発明の第2の実施形態を説明するためのアク
ティブマトリクス型液晶表示装置の平面図である。
FIG. 3 is a plan view of an active matrix liquid crystal display device for explaining a second embodiment of the present invention.

【図4】従来のアクティブマトリクス型液晶表示装置の
平面図及び拡大平面図である。
FIG. 4 is a plan view and an enlarged plan view of a conventional active matrix liquid crystal display device.

【図5】従来のアクティブマトリクス型液晶表示装置の
電極パターンの重ね合わせズレによる表示不良を説明す
るための拡大平面図である。
FIG. 5 is an enlarged plan view for explaining a display defect due to misalignment of an electrode pattern of a conventional active matrix liquid crystal display device.

【符号の説明】[Explanation of symbols]

1 第1透明基板 2、52、102 ゲート電極 3 第1絶縁膜 6、56、106 a−Si領域 7、57、107 SD電極 8 保護膜 9 コンタクトホール 10、66 偏光板 17 配向膜 18、118、218 液晶 22、72、122、222 共通電極 27、77、127、227 画素電極 32、82 共通補助電極 37、87、137 データ線 40 TFT基板 47、97 画素補助電極 50 CF基板 51 第2透明基板 56 光 61 ブラックマトリクス 63 色層 64 第2絶縁膜 65 導電膜 REFERENCE SIGNS LIST 1 First transparent substrate 2, 52, 102 Gate electrode 3 First insulating film 6, 56, 106 a-Si region 7, 57, 107 SD electrode 8 Protective film 9 Contact hole 10, 66 Polarizing plate 17 Alignment film 18, 118 218 liquid crystal 22, 72, 122, 222 common electrode 27, 77, 127, 227 pixel electrode 32, 82 common auxiliary electrode 37, 87, 137 data line 40 TFT substrate 47, 97 pixel auxiliary electrode 50 CF substrate 51 second transparent Substrate 56 light 61 black matrix 63 color layer 64 second insulating film 65 conductive film

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H090 JD10 KA18 LA04 MA02 MA06 MA15 MB01 2H092 GA14 JA26 JA29 JA33 JA35 JA38 JA39 JA42 JA43 JA46 JB13 JB22 JB27 JB32 JB36 JB51 JB57 JB63 JB69 KA05 KA16 KA18 KB24 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 MA27 MA35 MA37 MA41 NA04 NA25 NA27 PA02 QA18 5C094 AA02 AA03 AA10 AA55 BA03 BA43 CA19 CA23 EA03 EA04 EA07 EA10 ED02 FA01 FB12 GA10  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H090 JD10 KA18 LA04 MA02 MA06 MA15 MB01 2H092 GA14 JA26 JA29 JA33 JA35 JA38 JA39 JA42 JA43 JA46 JB13 JB22 JB27 JB32 JB36 JB51 JB57 JB63 JB69 KA05 KA16 KA18 MA18 MA05 MA08 MA19 MA20 MA27 MA35 MA37 MA41 NA04 NA25 NA27 PA02 QA18 5C094 AA02 AA03 AA10 AA55 BA03 BA43 CA19 CA23 EA03 EA04 EA07 EA10 ED02 FA01 FB12 GA10

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 第1基板の上に設けられた共通配線及び
ソース・ドレイン配線と、前記第1基板の上にあって前
記共通配線及び前記ソース・ドレイン配線を覆うTFT
側絶縁膜及びその上の配向膜とを有するTFT基板と、
第2基板の上に設けられた色層と、前記第2基板の上に
あって前記色層を覆うカラーフィルタ側絶縁膜及びその
上の配向膜とを有するカラーフィルタ基板と、前記TF
T基板及び前記カラーフィルタ基板に狭持される液晶と
を備え、前記共通配線及び前記ソース・ドレイン配線
は、互いに概略等間隔で並走する少なくとも一つのくの
字を含むジグザグ線の形状を呈するそれぞれ共通電極及
び画素電極を有しており、前記共通電極と前記画素電極
との間に電圧を印加して電界を発生させることにより前
記液晶を前記第1基板の表面と概略平行な平面内で回転
させるアクティブマトリクス型液晶表示装置であって、
前記共通電極及び前記画素電極は、それぞれくの字の頂
点部に前記電界と平行な方向に設けられ、かつ、それぞ
れ前記共通電極及び前記画素電極と接続するそれぞれ共
通補助電極及び画素補助電極を有することを特徴とする
アクティブマトリクス型液晶表示装置。
1. A common wiring and a source / drain wiring provided on a first substrate, and a TFT on the first substrate and covering the common wiring and the source / drain wiring.
A TFT substrate having a side insulating film and an alignment film thereon,
A color filter substrate having a color layer provided on a second substrate, a color filter side insulating film on the second substrate covering the color layer, and an alignment film thereon;
A liquid crystal sandwiched between a T substrate and the color filter substrate, wherein the common wiring and the source / drain wiring have a zigzag line shape including at least one dog-leg that runs parallel to each other at substantially equal intervals. Each has a common electrode and a pixel electrode, and by applying a voltage between the common electrode and the pixel electrode to generate an electric field, the liquid crystal is moved in a plane substantially parallel to the surface of the first substrate. An active matrix liquid crystal display device to be rotated,
The common electrode and the pixel electrode are provided at the apexes of the U-shape in a direction parallel to the electric field, and have a common auxiliary electrode and a pixel auxiliary electrode respectively connected to the common electrode and the pixel electrode. An active matrix type liquid crystal display device characterized by the above-mentioned.
【請求項2】 前記画素電極は前記TFT側絶縁膜中に
あって、前記共通電極よりも前記液晶側に位置し、前記
共通補助電極及び前記画素補助電極は、それぞれ前記共
通電極及び前記画素電極の上のTFT側絶縁膜を開口し
て設けられたそれぞれ第1開口部及び第2開口部を通し
てそれぞれ前記共通電極及び前記画素電極に接続される
請求項1記載のアクティブマトリクス型液晶表示装置。
2. The pixel electrode is located in the TFT-side insulating film and is located closer to the liquid crystal than the common electrode, and the common auxiliary electrode and the pixel auxiliary electrode are connected to the common electrode and the pixel electrode, respectively. 2. The active matrix type liquid crystal display device according to claim 1, wherein said common electrode and said pixel electrode are respectively connected through a first opening and a second opening provided by opening a TFT-side insulating film on said TFT.
【請求項3】 前記共通補助電極及び前記画素補助電極
は、前記TFT側絶縁膜の表面を前記電界と平行で、か
つ、くの字の突き出た方向に延在して設けられる請求項
1又は2記載のアクティブマトリクス型液晶表示装置。
3. The common auxiliary electrode and the pixel auxiliary electrode are provided so as to extend on the surface of the TFT-side insulating film in parallel with the electric field and in a direction in which a U-shaped projection is provided. 3. The active matrix liquid crystal display device according to 2.
【請求項4】 前記共通補助電極及び前記画素補助電極
は、それぞれ前記画素電極及び前記共通電極に一部重な
って設けられる請求項3記載のアクティブマトリクス型
液晶表示装置。
4. The active matrix liquid crystal display device according to claim 3, wherein the common auxiliary electrode and the pixel auxiliary electrode are provided so as to partially overlap the pixel electrode and the common electrode, respectively.
【請求項5】 前記共通電極は、前記画素電極に挟まれ
ない領域においては、くの字の抜きパターンの形状を呈
する請求項1乃至4のいずれかに記載のアクティブマト
リクス型液晶表示装置。
5. The active matrix type liquid crystal display device according to claim 1, wherein the common electrode has a U-shaped pattern in a region not interposed between the pixel electrodes.
【請求項6】 前記共通電極は、前記画素電極に挟まれ
た共通電極のくの字端部を前記電界と平行な方向に連結
すべく設けられる請求項1乃至5のいずれかに記載のア
クティブマトリクス型液晶表示装置。
6. The active device according to claim 1, wherein the common electrode is provided so as to connect a square-shaped end of the common electrode sandwiched between the pixel electrodes in a direction parallel to the electric field. Matrix type liquid crystal display device.
【請求項7】 前記共通補助電極及び前記画素補助電極
は、共に透明導電膜からなる請求項1乃至6のいずれか
に記載のアクティブマトリクス型液晶表示装置。
7. The active matrix liquid crystal display device according to claim 1, wherein said common auxiliary electrode and said pixel auxiliary electrode are both formed of a transparent conductive film.
JP2000326814A 2000-10-26 2000-10-26 Active matrix type liquid crystal display Expired - Lifetime JP3471737B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005196162A (en) * 2003-12-26 2005-07-21 Lg Philips Lcd Co Ltd In-plane switching mode liquid crystal display device
JP2007128112A (en) * 2001-02-23 2007-05-24 Nec Lcd Technologies Ltd Active matrix liquid crystal display device of lateral electric field system, and electronic apparatus
CN1324385C (en) * 2005-01-31 2007-07-04 广辉电子股份有限公司 Liquid crystal displaying device
US7352432B2 (en) 2003-11-28 2008-04-01 Nec Lcd Technologies, Ltd. Liquid crystal display device
JP2009181092A (en) * 2008-02-01 2009-08-13 Epson Imaging Devices Corp Liquid crystal display panel
JP2011018084A (en) * 2010-10-27 2011-01-27 Casio Computer Co Ltd Liquid crystal display element
US7973901B2 (en) 2005-07-15 2011-07-05 Samsung Electronics Co., Ltd. Liquid crystal display
CN101782704B (en) * 2009-01-20 2012-12-26 索尼公司 Liquid crystal display device and electronic apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007128112A (en) * 2001-02-23 2007-05-24 Nec Lcd Technologies Ltd Active matrix liquid crystal display device of lateral electric field system, and electronic apparatus
JP4603560B2 (en) * 2001-02-23 2010-12-22 Nec液晶テクノロジー株式会社 Horizontal electric field type active matrix liquid crystal display device and electronic device
US7352432B2 (en) 2003-11-28 2008-04-01 Nec Lcd Technologies, Ltd. Liquid crystal display device
JP2005196162A (en) * 2003-12-26 2005-07-21 Lg Philips Lcd Co Ltd In-plane switching mode liquid crystal display device
CN1324385C (en) * 2005-01-31 2007-07-04 广辉电子股份有限公司 Liquid crystal displaying device
US7973901B2 (en) 2005-07-15 2011-07-05 Samsung Electronics Co., Ltd. Liquid crystal display
JP2009181092A (en) * 2008-02-01 2009-08-13 Epson Imaging Devices Corp Liquid crystal display panel
CN101782704B (en) * 2009-01-20 2012-12-26 索尼公司 Liquid crystal display device and electronic apparatus
JP2011018084A (en) * 2010-10-27 2011-01-27 Casio Computer Co Ltd Liquid crystal display element

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