JP2002131532A - Dielectric multilayered film filter and dielectric multilayered film filter module having the same - Google Patents

Dielectric multilayered film filter and dielectric multilayered film filter module having the same

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Publication number
JP2002131532A
JP2002131532A JP2000323570A JP2000323570A JP2002131532A JP 2002131532 A JP2002131532 A JP 2002131532A JP 2000323570 A JP2000323570 A JP 2000323570A JP 2000323570 A JP2000323570 A JP 2000323570A JP 2002131532 A JP2002131532 A JP 2002131532A
Authority
JP
Japan
Prior art keywords
hole
filter
dielectric multilayer
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000323570A
Other languages
Japanese (ja)
Other versions
JP3680165B2 (en
Inventor
Takao Mase
高生 間瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Aviation Electronics Industry Ltd
Original Assignee
Japan Aviation Electronics Industry Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Aviation Electronics Industry Ltd filed Critical Japan Aviation Electronics Industry Ltd
Priority to JP2000323570A priority Critical patent/JP3680165B2/en
Publication of JP2002131532A publication Critical patent/JP2002131532A/en
Application granted granted Critical
Publication of JP3680165B2 publication Critical patent/JP3680165B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Optical Filters (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a dielectric multilayered film filter and a dielectric multilayered film filter module having the above filter such that the filter substrate as a holding body of the dielectric multilayered film is made thick and the dielectric multilayered film is held only by the substrate so as to allow only the dielectric multilayered film to be present, that the transmission loss of light is extremely little and that the filter can be easily manufactured and handled. SOLUTION: The dielectric multilayered film filter is obtained by preparing the filter substrate 4 having a pyramid-like through hole 41 composed of tapered guide parts 411 and a through hole 412, then forming a metal thin film 42 on the surface of the filter substrate 4 except for the through hole 412 region, and then forming a dielectric multilayered film 12 on the surface of the metal thin film 42 including the through-hole 412 region. The dielectric multilayered film filter module has the above filter.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、誘電体多層膜フ
ィルタおよびこれを有する誘電体多層膜フィルタモジュ
ールに関し、特に、光ファイバを案内保持する案内保持
板を有する誘電体多層膜フィルタおよびこれを有する誘
電体多層膜フィルタモジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric multilayer filter and a dielectric multilayer filter module having the same, and more particularly to a dielectric multilayer filter having a guide holding plate for guiding and holding an optical fiber and having the same. The present invention relates to a dielectric multilayer filter module.

【0002】[0002]

【従来の技術】従来例を図を参照して説明する。図4を
参照して誘電体多層膜フィルタの従来例を説明するに、
この誘電体多層膜フィルタ1はガラス薄板11の表面に
誘電体多層膜12を成膜形成したものより成る。この誘
電体多層膜フィルタ1は、厚み100μm程度の大面積
のガラス薄板に誘電体多層膜フィルタを成膜形成し、こ
れをダイシング加工を施して数ミリ角の大きさに切り出
したものである。
2. Description of the Related Art A conventional example will be described with reference to the drawings. Referring to FIG. 4, a conventional example of a dielectric multilayer filter will be described.
This dielectric multilayer filter 1 is formed by forming a dielectric multilayer film 12 on the surface of a thin glass plate 11. This dielectric multilayer filter 1 is formed by forming a dielectric multilayer filter on a thin glass plate having a thickness of about 100 μm and having a large area, and performing dicing to cut the filter into a size of several mm square.

【0003】図5を参照して誘電体多層膜フィルタを組
み込んだ誘電体多層膜フィルタモジュールの従来例を説
明するに、誘電体多層膜フィルタ1は断面V溝形成基板
3の表面に形成されるスリット32に挿入されている。
誘電体多層膜フィルタ1は断面V溝形成基板3のスリッ
ト32に挿入後、スリット32に透明接着剤33を充填
して断面V溝形成基板3に固定される。ここで、入力光
ファイバ21および送受信光ファイバ23を、断面V溝
形成基板3に形成される断面V溝31に位置決めし、誘
電体多層膜フィルタ1を介在させてファイバ端面を対向
軸合わせさせた状態で、断面V溝形成基板3に接合固定
する。
Referring to FIG. 5, a conventional example of a dielectric multilayer filter module incorporating a dielectric multilayer filter will be described. A dielectric multilayer filter 1 is formed on the surface of a substrate 3 having a V-shaped cross section. It is inserted into the slit 32.
After the dielectric multilayer filter 1 is inserted into the slit 32 of the cross-sectional V-groove forming substrate 3, the slit 32 is filled with a transparent adhesive 33 and fixed to the cross-sectional V-groove forming substrate 3. Here, the input optical fiber 21 and the transmission / reception optical fiber 23 were positioned in the cross-sectional V-groove 31 formed in the cross-sectional V-groove forming substrate 3, and the fiber end faces were opposed to each other through the dielectric multilayer filter 1. In this state, it is bonded and fixed to the cross-sectional V-groove forming substrate 3.

【0004】図6を参照して誘電体多層膜フィルタを組
み込んだ誘電体多層膜フィルタモジュールの他の従来例
を説明するに、これは誘電体多層膜フィルタ1がガラス
薄板11を有しない誘電体多層膜12のみにより構成さ
れる従来例である。誘電体多層膜12のみにより構成さ
れる誘電体多層膜フィルタ1は、ガラス基板の表面に蒸
着成膜されたクロム被膜の表面に誘電体多層膜を成膜形
成し、次いで、必要な大きさに切断し、クロム被膜をエ
ッチングにより除去して誘電体多層膜12を形成するこ
とができる(詳細は、特開平4−101106号公報
参照)。
Referring to FIG. 6, another conventional example of a dielectric multilayer filter module incorporating a dielectric multilayer filter will be described. The dielectric multilayer filter 1 is a dielectric filter having no thin glass plate 11. This is a conventional example composed of only the multilayer film 12. The dielectric multilayer filter 1 composed of only the dielectric multilayer film 12 is formed by forming a dielectric multilayer film on the surface of a chromium film deposited on the surface of a glass substrate, and then forming the required size. The dielectric multilayer film 12 can be formed by cutting and removing the chromium film by etching (for details, see JP-A-4-101106).
reference).

【0005】図7を参照するに、以上の誘電体多層膜フ
ィルタモジュールは、光ファイバを介して伝送される波
長を異にする複数の光から特定の波長を透過し、或いは
反射することができる。即ち、送受信光ファイバ23を
介して伝送された波長1. 55μmの光は誘電体多層膜
フィルタ1を透過し入力光ファイバ21を介してフォト
ダイオード8に送り込まれ、入力光ファイバ21を介し
て伝送された波長1.31μmの光は誘電体多層膜フィ
ルタ1を透過せず反射し送受信光ファイバ23を介して
外部に送り出される。
Referring to FIG. 7, the above dielectric multilayer filter module can transmit or reflect a specific wavelength from a plurality of lights having different wavelengths transmitted through an optical fiber. . That is, light having a wavelength of 1.55 μm transmitted through the transmission / reception optical fiber 23 passes through the dielectric multilayer filter 1, is sent to the photodiode 8 via the input optical fiber 21, and is transmitted via the input optical fiber 21. The light having a wavelength of 1.31 μm does not pass through the dielectric multilayer filter 1 but is reflected and sent out through the transmission / reception optical fiber 23.

【0006】[0006]

【発明が解決しようとする課題】ところが、断面V溝形
成基板3にスリット32を形成し、このスリット32に
厚みの極く薄い誘電体多層膜フィルタ1を挿入する従来
例は種々の問題を内包している。即ち、誘電体多層膜フ
ィルタ1を断面V溝形成基板3に形成されるスリット3
2に挿入する工程は容易ではない。スリット32に対す
る誘電体多層膜フィルタ1の挿入位置決めは、誘電体多
層膜フィルタモジュールの光伝送特性に大きく影響す
る。誘電体多層膜フィルタ1の厚さは15μm程度の極
く薄いものであり、これをスリット32に挿入するに
は、当然、スリット32の幅が誘電体多層膜フィルタ1
の厚さより大でなくてはならず、スリット32の幅は2
0μm程度に形成される。従って、誘電体多層膜フィル
タ1はスリット32内で遊びがあり、その位置は設計位
置に厳密には決められない。位置決め精度を向上するに
はスリット32の幅を狭く設計形成しなければならない
が、幅を狭くする程誘電体誘電体多層膜フィルタ1の挿
入は困難になり、取り扱いは容易ではない。
However, the conventional example in which a slit 32 is formed in the substrate 3 having a V-shaped groove and the dielectric multilayer filter 1 having an extremely small thickness is inserted into the slit 32 has various problems. are doing. That is, the slit 3 formed in the substrate 3 with the V-shaped cross-section formed by the dielectric multilayer filter 1
2 is not easy. Positioning of the insertion of the dielectric multilayer filter 1 into the slit 32 greatly affects the optical transmission characteristics of the dielectric multilayer filter module. The thickness of the dielectric multilayer filter 1 is extremely thin, about 15 μm. To insert this into the slit 32, the width of the slit 32 must be
And the width of the slit 32 must be 2
It is formed to about 0 μm. Therefore, the dielectric multilayer filter 1 has play in the slit 32, and its position is not strictly determined by the design position. In order to improve the positioning accuracy, the width of the slit 32 must be designed and formed to be narrow. However, the narrower the width, the more difficult it is to insert the dielectric / dielectric multilayer filter 1 and the easier it is to handle.

【0007】ガラス薄板11の表面に誘電体多層膜12
を成膜形成したものより成る誘電体多層膜フィルタ1の
場合は、全体の厚さは100μm程度にも及び、ガラス
薄板11による光の損失を抑える必要上極力厚みを薄く
構成している。その結果、厚みを薄く構成した誘電体多
層膜フィルタ1は、ダイシング加工時およびモジュール
組み込み時に破損が発生し易く、取り扱い難い欠点を有
する。この発明は、シリコン基板を原材料とし、これに
異方性エッチングを施して角錐状貫通孔を形成したフィ
ルタ基板に誘電体多層膜を成膜することにより上述の問
題を解消した誘電体多層膜フィルタおよびこれを有する
誘電体多層膜フィルタモジュールを提供するものであ
る。
A dielectric multilayer film 12 is formed on the surface of a glass thin plate 11.
In the case of the dielectric multilayer filter 1 formed by forming a film, the overall thickness is about 100 μm, and the thickness is made as thin as possible in order to suppress the loss of light due to the thin glass plate 11. As a result, the dielectric multilayer filter 1 having a small thickness is liable to be damaged at the time of dicing and assembling into a module, and has a drawback that it is difficult to handle. The present invention provides a dielectric multilayer filter which solves the above-mentioned problem by forming a dielectric multilayer film on a filter substrate having a pyramid-shaped through hole formed by performing anisotropic etching on a silicon substrate as a raw material. And a dielectric multilayer filter module having the same.

【0008】[0008]

【課題を解決するための手段】請求項1:テーパ状案内
部411と貫通孔412より成る錐状貫通孔41を形成
するフィルタ基板4を具備し、フィルタ基板4の表面に
貫通孔412領域を除いて金属薄膜42を成膜し、金属
薄膜42表面に貫通孔412領域を含めて誘電体多層膜
12を成膜した誘電体多層膜フィルタを構成した。そし
て、請求項2:請求項1に記載される誘電体多層膜フィ
ルタにおいて、フィルタ基板4はシリコン基板により構
成され、錐状貫通孔41はテーパ状案内部411を角錐
状案内部とし、貫通孔41を角孔とした角錐状貫通孔で
ある誘電体多層膜フィルタを構成した。
A filter substrate having a tapered guide portion and a conical through-hole formed of a through-hole is formed on the surface of the filter substrate. A dielectric thin film filter was formed by removing the metal thin film 42 and forming the dielectric multilayer film 12 on the surface of the metal thin film 42 including the through hole 412 region. Claim 2: In the dielectric multilayer filter according to claim 1, the filter substrate 4 is formed of a silicon substrate, the conical through-hole 41 is a tapered guide 411 having a pyramidal guide, and A dielectric multilayer filter having a pyramid-shaped through hole having a square hole 41 was formed.

【0009】また、請求項3:1対の光ファイバ21、
23が嵌合固定される案内溝31および案内溝31に交
差して誘電体多層膜フィルタ1が嵌合固定されるスリッ
ト32が表面に形成される案内溝形成基板4を具備し、
誘電体多層膜フィルタ1は、テーパ状案内部411と貫
通孔412より成る錐状貫通孔41を形成するフィルタ
基板4を具備し、フィルタ基板4の表面に貫通孔412
領域を除いて金属薄膜42を成膜し、金属薄膜42表面
に貫通孔412領域を含めて誘電体多層膜12を成膜し
たものより成り、ファイバ端面を誘電体多層膜12を介
して対向軸合わせさせた状態で1対の光ファイバ21、
23を案内溝形成基板3の案内溝31に位置決め固定し
た誘電体多層膜フィルタモジュールを構成した。
Further, claim 3: a pair of optical fibers 21,
A guide groove forming substrate on which a slit is formed on the surface of the guide groove, the slit being fitted to and fixed to the dielectric multilayer filter;
The dielectric multilayer filter 1 includes a filter substrate 4 that forms a conical through-hole 41 composed of a tapered guide 411 and a through-hole 412, and the through-hole 412 is formed on the surface of the filter substrate 4.
A metal thin film 42 is formed excluding the region, and the dielectric multilayer film 12 is formed on the surface of the metal thin film 42 including the through hole 412 region. A pair of optical fibers 21,
A dielectric multilayer film filter module 23 was positioned and fixed in the guide groove 31 of the guide groove forming substrate 3.

【0010】更に、請求項4:請求項3に記載される誘
電体多層膜フィルタモジュールにおいて、フィルタ基板
4はシリコン基板により構成され、錐状貫通孔41はテ
ーパ状案内部411を角錐状案内部とし、貫通孔41を
角孔とした角錐状貫通孔である誘電体多層膜フィルタモ
ジュールを構成した。ここで、請求項5:シリコン薄板
より成るフィルタ基板4の表裏両面にシリコン薄板エッ
チャント耐性の金属薄膜42を成膜する(工程1)、角
錐状貫通孔41の幅が広い側の形状寸法の4角形パター
ン5を裏面の金属薄膜42に形成し、金属薄膜42をエ
ッチング除去する(工程2)、シリコン薄板より成るフ
ィルタ基板4を異方性エッチングして角錐状貫通孔41
を形成する(工程3)、表面の金属薄膜42に誘電体多
層膜12を成膜形成する(工程4)、裏面に残存する金
属薄膜42をエッチング除去する(工程5)、ダイシン
グ加工を施して所定の寸法に切り出す(工程6)より成
る誘電体多層膜フィルタの製造方法を構成した。
Further, in the dielectric multilayer filter module according to the present invention, the filter substrate 4 is formed of a silicon substrate, and the conical through-hole 41 is formed of a tapered guide portion 411 and a pyramid-shaped guide portion. Thus, a dielectric multilayer filter module which is a pyramidal through hole having the through hole 41 as a square hole was formed. Here, claim 5: A metal thin film 42 having a silicon thin film etchant resistance is formed on both front and back surfaces of the filter substrate 4 made of a silicon thin plate (step 1). The rectangular pattern 5 is formed on the metal thin film 42 on the back surface, the metal thin film 42 is removed by etching (step 2), and the filter substrate 4 made of a silicon thin plate is anisotropically etched to form a pyramidal through hole 41.
(Step 3), the dielectric multilayer film 12 is formed on the metal thin film 42 on the front surface (Step 4), the metal thin film 42 remaining on the back surface is removed by etching (Step 5), and dicing is performed. A method for manufacturing a dielectric multilayer film filter comprising cutting out to a predetermined size (step 6) was constructed.

【0011】[0011]

【発明の実施の形態】この発明の実施の形態を図1の実
施例を参照して説明する。図1は誘電体多層膜フィルタ
の実施例を説明する図である。1は誘電体多層膜フィル
タ、4はフィルタ基板である。このフィルタ基板4の厚
さはおよそ500μm程度に設計される。フィルタ基板
4の中央部には錐状貫通孔である角錐状貫通孔41が貫
通形成されている。この角錐状貫通孔41はテーパ状案
内部411と貫通孔である角孔412より成る。42は
フィルタ基板4の表面に成膜形成された金属薄膜であ
り、角孔412に対応する領域は貫通除去されている。
12は金属薄膜42の表面に成膜形成された誘電体多層
膜である。金属薄膜42はフィルタ基板4と誘電体多層
膜12の間に介在して金属薄膜42の固定を確実にする
膜である。フィルタ基板4の表面に金属薄膜42を成膜
し、角孔412に対応する領域を除去した後、角孔41
2領域を含めて金属薄膜42表面に誘電体多層膜12を
成膜する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the embodiment shown in FIG. FIG. 1 is a diagram illustrating an embodiment of a dielectric multilayer filter. 1 is a dielectric multilayer filter, and 4 is a filter substrate. The thickness of the filter substrate 4 is designed to be about 500 μm. At the center of the filter substrate 4, a pyramidal through-hole 41, which is a pyramidal through-hole, is formed. The pyramid-shaped through hole 41 includes a tapered guide portion 411 and a square hole 412 that is a through hole. Reference numeral 42 denotes a metal thin film formed on the surface of the filter substrate 4, and a region corresponding to the square hole 412 is removed by penetration.
Reference numeral 12 denotes a dielectric multilayer film formed on the surface of the metal thin film. The metal thin film 42 is a film interposed between the filter substrate 4 and the dielectric multilayer film 12 to secure the metal thin film 42. After a metal thin film 42 is formed on the surface of the filter substrate 4 and a region corresponding to the square hole 412 is removed,
The dielectric multilayer film 12 is formed on the surface of the metal thin film 42 including the two regions.

【0012】図2は誘電体多層膜フィルタモジュールの
実施例を説明する図である。図2(a)は誘電体多層膜
フィルタモジュールを上から視たところを示す図、図2
(b)は図1(a)における線A−Aに沿った断面を示
す図である。3は案内溝形成基板である断面V溝形成基
板を示す。断面V溝形成基板3には誘電体多層膜フィル
タ1を嵌合固定するスリット32が横断形成されてい
る。誘電体多層膜フィルタ1は、スリット32に透明接
着剤33を適用してから嵌合固定せしめられる。断面V
溝形成基板3には、更に、断面V溝31がスリット32
に適正な角度で交差する方向に形成されている。この断
面V溝31は、その誘電体多層膜フィルタ1の角錐状貫
通孔41側に入力光ファイバ21が嵌合固定されると共
に誘電体多層膜12側に送受信光ファイバ23が嵌合固
定されている。断面V溝形成基板3の誘電体多層膜12
側には、必要に応じて、出力光ファイバ22を図7に示
される如く透明接着剤33に対して適正な角度で具備せ
しめる。
FIG. 2 is a view for explaining an embodiment of the dielectric multilayer filter module. FIG. 2A is a diagram showing the dielectric multilayer filter module viewed from above, and FIG.
(B) is a figure which shows the cross section along line AA in Fig.1 (a). Reference numeral 3 denotes a cross-sectional V-groove forming substrate which is a guide groove forming substrate. A slit 32 for fitting and fixing the dielectric multilayer filter 1 is formed in the cross-section V-groove forming substrate 3. The dielectric multilayer filter 1 is fitted and fixed after applying the transparent adhesive 33 to the slit 32. Section V
The groove forming substrate 3 is further provided with a cross-sectional V-groove 31 having a slit 32.
Are formed in directions that intersect at an appropriate angle. The input optical fiber 21 is fitted and fixed on the side of the pyramidal through hole 41 of the dielectric multilayer film filter 1 and the transmission / reception optical fiber 23 is fitted and fixed on the side of the dielectric multilayer film 12. I have. Dielectric multilayer film 12 of cross-sectional V-groove forming substrate 3
On the side, if necessary, the output optical fiber 22 is provided at an appropriate angle with respect to the transparent adhesive 33 as shown in FIG.

【0013】図3を参照してフィルタ基板を有する誘電
体多層膜フィルタを製造する工程を説明する。 (工程1) シリコン薄板より成るフィルタ基板4の表
裏両面にシリコン薄板エッチャントに耐性の金属薄膜4
2を成膜する。金属薄膜42の材料としては、クロム、
或いは金/クロムが採用される。この金/クロムはフィ
ルタ基板4のシリコンに対する付着力を増強するクロム
を介在させる2層膜である。 (工程2) フォトリソグラフィ技術により角錐状貫通
孔41の幅が広い側の形状寸法の4角形パターン5を裏
面の金属薄膜42に形成し、金属薄膜42をエッチング
除去する。金属薄膜42のエッチャントは、クロムに対
して塩酸を使用し、金/クロムに対して王水を使用す
る。
Referring to FIG. 3, a process for manufacturing a dielectric multilayer filter having a filter substrate will be described. (Step 1) Metal thin film 4 resistant to silicon thin film etchant on both front and back surfaces of filter substrate 4 made of silicon thin plate
2 is formed. The material of the metal thin film 42 is chromium,
Alternatively, gold / chrome is employed. This gold / chromium is a two-layer film in which chromium for enhancing the adhesion of the filter substrate 4 to silicon is interposed. (Step 2) A quadrangular pattern 5 having the shape and dimension of the wide side of the pyramid-shaped through-hole 41 is formed on the metal thin film 42 on the rear surface by photolithography, and the metal thin film 42 is removed by etching. The etchant of the metal thin film 42 uses hydrochloric acid for chromium and aqua regia for gold / chromium.

【0014】(工程3) シリコン薄板より成るフィル
タ基板4を異方性エッチングし、角錐状貫通孔41を形
成する。シリコン薄板のエッチャントは水酸化カリウ
ム、テトラメチルアンモニウムハイドロオキサイド(T
MAH)が使用される。 (工程4) 表面の金属薄膜42に誘電体多層膜12を
成膜形成する。 (工程5) 裏面に残存する金属薄膜42をエッチング
により除去する。 (工程6) ダイシング加工を施して数ミリ角の大きさ
に切り出す。
(Step 3) The filter substrate 4 made of a silicon thin plate is anisotropically etched to form a pyramid-shaped through hole 41. Etchant of silicon thin plate is potassium hydroxide, tetramethylammonium hydroxide (T
MAH) is used. (Step 4) The dielectric multilayer film 12 is formed on the metal thin film 42 on the surface. (Step 5) The metal thin film 42 remaining on the back surface is removed by etching. (Step 6) Dicing is performed and cut out to a size of several mm square.

【0015】[0015]

【発明の効果】以上の通りであって、この発明によれ
ば、シリコン基板を原材料とし、これに異方性エッチン
グを施して角錐状貫通孔41を形成したフィルタ基板4
に誘電体多層膜12を成膜した誘電体多層膜フィルタ1
を構成した。これにより、誘電体多層膜12の保持体で
あるフィルタ基板4の厚さは従来例と比較して厚くされ
たので、これのみにより誘電体多層膜12を充分に保持
することができ、光路上に誘電体多層膜12のみが存在
する光の伝送損失の極く小さい誘電体多層膜フィルタ1
を得ることができる。そして、フィルタ基板4自体の厚
さを従来例のガラス薄板を含めて100μm程度と比較
して500μm程度に厚く設計することができるので、
これを数mm角にダイシング切断加工する時およびモジ
ュール組み込み時の破損の発生を少なくすることができ
る。
As described above, according to the present invention, a filter substrate 4 having a pyramidal through-hole 41 formed by using a silicon substrate as a raw material and subjecting the silicon substrate to anisotropic etching.
Multilayer filter 1 in which dielectric multilayer 12 is formed
Was configured. As a result, the thickness of the filter substrate 4, which is a holder for the dielectric multilayer film 12, is increased as compared with the conventional example. Multi-layer filter 1 with very small light transmission loss in which only multi-layer dielectric 12 exists
Can be obtained. Then, the thickness of the filter substrate 4 itself can be designed to be as thick as about 500 μm as compared with about 100 μm including the glass thin plate of the conventional example.
It is possible to reduce the occurrence of breakage when dicing this into a square of several mm and when assembling the module.

【0016】また、フィルタ基板4にテーパ状案内部4
11と貫通する角孔412より成る角錐状貫通孔41を
貫通形成したことにより、誘電体多層膜フィルタ1を断
面V溝形成基板3に組み込み誘電体多層膜フィルタモジ
ュールを構成するに際し、誘電体多層膜12を介して対
向軸合わせする光ファイバ端面同志の位置合わせを正確
に実施することができる。即ち、図2において、送受信
光ファイバ23をその端面を断面V溝形成基板3のスリ
ット32の側壁に整列して断面V溝31に嵌合固定し、
次いで、誘電体多層膜フィルタ1の角孔412に対応す
る誘電体多層膜12の一方の面を送受信光ファイバ23
の端面に整列して当該多層膜フィルタをスリット32に
接合固定する。ここで、入力光ファイバ21を断面V溝
形成基板3の断面V溝31に嵌合し、この光ファイバの
先端部を角錐状貫通孔41のテーパ状案内部411に係
合して案内させながら入力光ファイバ21を押し込み、
入力光ファイバ21の端面を角孔412を通過して誘電
体多層膜12の他方の面に位置決めした状態で、入力光
ファイバ21を断面V溝31に接合固定する。この場
合、断面V溝形成基板3に対して先に位置決め固定され
たフィルタ基板4の角錐状貫通孔41の角孔412と入
力光ファイバ21の断面V溝31の間に何らかの不整合
が存在しても、入力光ファイバ21の端面はテーパ状案
内部411に案内されて確実に角孔412にたどり着く
ことができ、入力光ファイバ21の端面と送受信光ファ
イバ23の端面は誘電体多層膜12を介して対向軸合わ
せすることができる。
The filter substrate 4 has a tapered guide 4
When the dielectric multilayer filter 1 is incorporated into the cross-section V-groove forming substrate 3 to form the dielectric multilayer filter module, the dielectric multilayer filter 1 is formed by forming the pyramid-shaped through-hole 41 including the square hole 412 penetrating therethrough. Positioning of optical fiber end faces to be opposed to each other through the film 12 can be accurately performed. That is, in FIG. 2, the transmission / reception optical fiber 23 has its end face aligned with the side wall of the slit 32 of the cross-section V-groove forming substrate 3 and fitted and fixed in the cross-section V-groove 31.
Next, one surface of the dielectric multilayer film 12 corresponding to the square hole 412 of the dielectric multilayer filter 1 is
And the multilayer filter is joined and fixed to the slit 32. Here, the input optical fiber 21 is fitted into the cross-sectional V-groove 31 of the cross-sectional V-groove forming substrate 3, and the distal end of the optical fiber is engaged with and guided by the tapered guide portion 411 of the pyramidal through-hole 41. Push in the input optical fiber 21,
With the end face of the input optical fiber 21 being positioned on the other surface of the dielectric multilayer film 12 through the square hole 412, the input optical fiber 21 is fixedly joined to the V-shaped groove 31 in section. In this case, there is some mismatch between the square hole 412 of the pyramid-shaped through hole 41 of the filter substrate 4 previously positioned and fixed with respect to the sectional V-groove forming substrate 3 and the sectional V-groove 31 of the input optical fiber 21. However, the end face of the input optical fiber 21 is guided by the tapered guide portion 411 and can reliably reach the square hole 412. The end face of the input optical fiber 21 and the end face of the transmission / reception optical fiber 23 are formed by the dielectric multilayer film 12. The opposing axes can be aligned through the intermediary.

【図面の簡単な説明】[Brief description of the drawings]

【図1】誘電体多層膜フィルタの実施例を説明する図。FIG. 1 is a diagram illustrating an embodiment of a dielectric multilayer filter.

【図2】誘電体多層膜フィルタモジュールの実施例を説
明する図。
FIG. 2 is a view for explaining an embodiment of a dielectric multilayer filter module.

【図3】誘電体多層膜フィルタの製造工程を説明する
図。
FIG. 3 is a diagram illustrating a manufacturing process of the dielectric multilayer filter.

【図4】誘電体多層膜フィルタの従来例を説明する図。FIG. 4 is a diagram illustrating a conventional example of a dielectric multilayer filter.

【図5】誘電体多層膜フィルタモジュールの従来例を説
明する図。
FIG. 5 is a diagram illustrating a conventional example of a dielectric multilayer filter module.

【図6】誘電体多層膜フィルタモジュールの他の従来例
を説明する図。
FIG. 6 is a diagram illustrating another conventional example of a dielectric multilayer filter module.

【図7】伝送される光の出入りを説明する図。FIG. 7 is a diagram illustrating the ingress and egress of transmitted light.

【符号の説明】[Explanation of symbols]

1 誘電体多層膜フィルタ 11 ガラス薄板 12 誘電体多層膜 21 入力光ファイバ 22 出力光ファイバ 23 送受信光ファイバ 3 断面V溝形成基板 31 断面V溝 32 スリット 33 透明接着剤 4 フィルタ基板 41 角錐状貫通孔 411 テーパ状案内部 412 角孔 42 金属薄膜 5 4角形パターン DESCRIPTION OF SYMBOLS 1 Dielectric multilayer film filter 11 Glass thin plate 12 Dielectric multilayer film 21 Input optical fiber 22 Output optical fiber 23 Transmitting and receiving optical fiber 3 Cross-section V-groove forming substrate 31 Cross-section V-groove 32 Slit 33 Transparent adhesive 4 Filter substrate 41 Pyramidal through hole 411 Tapered guide 412 Square hole 42 Metal thin film 5 Square pattern

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 テーパ状案内部と貫通孔より成る錐状貫
通孔を形成するフィルタ基板を具備し、 フィルタ基板の表面に貫通孔領域を除いて金属薄膜を成
膜し、 金属薄膜表面に貫通孔領域を含めて誘電体多層膜を成膜
したことを特徴とする誘電体多層膜フィルタ。
1. A filter substrate comprising a tapered guide portion and a conical through-hole comprising a through-hole, a metal thin film formed on the surface of the filter substrate except for a through-hole region, and a metal thin film penetrating through the surface of the metal thin film. A dielectric multilayer filter comprising a dielectric multilayer film including a hole region.
【請求項2】 請求項1に記載される誘電体多層膜フィ
ルタにおいて、 フィルタ基板はシリコン基板により構成され、 錐状貫通孔はテーパ状案内部を角錐状案内部とし、貫通
孔を角孔とした角錐状貫通孔であることを特徴とする誘
電体多層膜フィルタ。
2. The dielectric multilayer filter according to claim 1, wherein the filter substrate is made of a silicon substrate, the conical through-hole is a pyramid-shaped guide with a tapered guide, and the through-hole is a square hole. A dielectric pyramid-shaped through-hole.
【請求項3】 1対の光ファイバが嵌合固定される案内
溝および案内溝に交差して誘電体多層膜フィルタが嵌合
固定されるスリットが表面に形成される案内溝形成基板
を具備し、 誘電体多層膜フィルタは、テーパ状案内部と貫通孔より
成る錐状貫通孔を形成するフィルタ基板を具備し、フィ
ルタ基板の表面に貫通孔領域を除いて金属薄膜を成膜
し、金属薄膜表面に貫通孔領域を含めて誘電体多層膜を
成膜したものより成り、 ファイバ端面を誘電体多層膜を介して対向軸合わせさせ
た状態で1対の光ファイバを案内溝形成基板の案内溝に
位置決め固定したことを特徴とする誘電体多層膜フィル
タモジュール。
3. A guide groove having a guide groove in which a pair of optical fibers are fitted and fixed, and a guide groove forming substrate on the surface of which a slit intersecting the guide groove and in which a dielectric multilayer filter is fitted and fixed is formed. The dielectric multilayer filter includes a filter substrate that forms a conical through-hole including a tapered guide portion and a through-hole, and forms a metal thin film on the surface of the filter substrate except for a through-hole region. A pair of optical fibers is formed on the surface of the substrate with a guide groove formed by forming a dielectric multi-layer film including a through hole region on the surface, and aligning the end faces of the fibers with the opposing axes via the dielectric multi-layer film. A dielectric multilayer filter module characterized by being positioned and fixed at a position.
【請求項4】 請求項3に記載される誘電体多層膜フィ
ルタモジュールにおいて、 フィルタ基板はシリコン基板により構成され、 錐状貫通孔はテーパ状案内部を角錐状案内部とし、貫通
孔を角孔とした角錐状貫通孔であることを特徴とする誘
電体多層膜フィルタモジュール。
4. The dielectric multilayer filter module according to claim 3, wherein the filter substrate is made of a silicon substrate, the conical through hole has a tapered guide portion as a pyramid guide portion, and the through hole has a square hole. A dielectric pyramid-shaped filter module, characterized in that it is a pyramidal through-hole.
【請求項5】シリコン薄板より成るフィルタ基板の表裏
両面にシリコン薄板エッチャントに耐性の金属薄膜を成
膜する(工程1)、 角錐状貫通孔の幅が広い側の形状寸法の4角形パターン
を裏面の金属薄膜に形成し、金属薄膜をエッチング除去
する(工程2)、 シリコン薄板より成るフィルタ基板を異方性エッチング
して角錐状貫通孔を形成する(工程3)、 表面の金属薄膜に誘電体多層膜を成膜形成する(工程
4)、 裏面に残存する金属薄膜をエッチング除去する(工程
5)、 ダイシング加工を施して所定の寸法に切り出す(工程
6)より成ることを特徴とする誘電体多層膜フィルタの
製造方法。
5. A thin metal film resistant to a silicon thin film etchant is formed on both front and back surfaces of a filter substrate made of a silicon thin plate (step 1). A metal thin film is formed by etching and removing the metal thin film (Step 2). A filter substrate made of a silicon thin plate is anisotropically etched to form a pyramid-shaped through hole (Step 3). A dielectric film comprising: forming a multilayer film (step 4); removing a thin metal film remaining on the back surface by etching (step 5); and performing dicing to cut out to a predetermined size (step 6). A method for manufacturing a multilayer filter.
JP2000323570A 2000-10-24 2000-10-24 Dielectric multilayer filter and dielectric multilayer filter module having the same Expired - Fee Related JP3680165B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004044622A2 (en) 2002-11-12 2004-05-27 Xponent Photonics Inc Optical component for free-space optical propagation between waveguides

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004044622A2 (en) 2002-11-12 2004-05-27 Xponent Photonics Inc Optical component for free-space optical propagation between waveguides
EP1561139A2 (en) * 2002-11-12 2005-08-10 Xponent Photonics, Inc. Optical component for free-space optical propagation between waveguides
JP2006520006A (en) * 2002-11-12 2006-08-31 イクスポーネント フォトニクス,インコーポレイティド Optical device, method of forming an optical device, and optical assembly incorporating an optical device
JP4789619B2 (en) * 2002-11-12 2011-10-12 ホーヤ コーポレイション ユーエスエイ Optical device and optical assembly incorporating optical device
EP1561139B1 (en) * 2002-11-12 2014-06-25 Hoya Corporation Usa Optical component for free-space optical propagation between waveguides

Also Published As

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