JP2002110617A - Polymer-removing apparatus and method therefor using the same - Google Patents
Polymer-removing apparatus and method therefor using the sameInfo
- Publication number
- JP2002110617A JP2002110617A JP2000301964A JP2000301964A JP2002110617A JP 2002110617 A JP2002110617 A JP 2002110617A JP 2000301964 A JP2000301964 A JP 2000301964A JP 2000301964 A JP2000301964 A JP 2000301964A JP 2002110617 A JP2002110617 A JP 2002110617A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- cleaning
- liquid
- cleaning liquid
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ウエハ表面に付着
したポリマーを除去するポリマー除去装置およびこれを
用いたポリマー除去方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polymer removing apparatus for removing a polymer attached to a wafer surface and a polymer removing method using the same.
【０００２】[0002]
【従来の技術】一般に、配線パターン、ピッチおよびス
ルーホール径が微細化するにつれて、ウエハに付着する
異物の歩留まりへの影響はますます大きくなってきた。
例えば、特開平６―１３２２７０号公報には、薬液中に
浸漬してウエハを洗浄する洗浄槽と、この洗浄槽からオ
ーバーフローする薬液を受け、その液面を検出する液面
センサーを設けたオーバーフロー槽とを備えたもので、
上記液面が制御された状態で薬液をろ過しながら上記洗
浄槽へ循環させることが記載されている。2. Description of the Related Art In general, as wiring patterns, pitches, and through-hole diameters become finer, the influence of foreign substances adhering to a wafer on the yield has become larger.
For example, JP-A-6-132270 discloses an overflow tank provided with a cleaning tank for immersing the wafer in a chemical solution to wash the wafer, and a liquid level sensor for receiving the overflowing chemical solution from the cleaning tank and detecting the liquid level. With
It is described that a chemical solution is circulated to the washing tank while filtering the chemical solution in a state where the liquid level is controlled.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の方法では薬液により、ウエハ表面のポリマー等異物
が除去されるが、冷却等により再度ウエハ表面でポリマ
ーの析出（凝集）が起こり、上記析出したポリマーを介
してウエハ表面に異物が付着するという課題があった。In the above-mentioned conventional method, however, foreign substances such as polymer on the wafer surface are removed by the chemical solution, but the polymer is precipitated (agglomerated) again on the wafer surface by cooling or the like, and the above-mentioned precipitation occurs. There is a problem that foreign matter adheres to the wafer surface via the polymer.
【０００４】本発明はかかる課題を解消するためになさ
れたもので、ウエハ表面にポリマーが再付着するのを防
止し、ウエハ表面のポリマーを減少させるポリマー除去
装置およびこれを用いたポリマー除去方法を目的とす
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a polymer removing apparatus and a polymer removing method which prevent the polymer from re-adhering to the wafer surface and reduce the polymer on the wafer surface. Aim.
【０００５】[0005]
【課題を解決するための手段】本発明に係る第１のポリ
マー除去装置は、ウエハ上のポリマーに接触液を接触さ
せ上記接触液に上記ポリマーを含有させる接触手段、上
記ウエハ上の接触液を除去して洗浄処理する洗浄液を有
する洗浄槽、および上記洗浄液を循環ろ過する循環ろ過
手段を備え、上記ろ過部を通過する洗浄液の温度を、上
記洗浄処理部での洗浄液の温度より低温とするものであ
る。According to the first aspect of the present invention, there is provided a first polymer removing device, wherein a contact liquid is brought into contact with a polymer on a wafer, and the contact liquid contains the polymer. A washing tank having a washing solution to be removed and washed, and a circulating filtration means for circulating and filtering the washing solution, wherein the temperature of the washing solution passing through the filtration section is lower than the temperature of the washing solution in the washing section. It is.
【０００６】本発明に係る第２のポリマー除去装置は、
上記第１のポリマー除去装置において、ろ過部を通過す
る以前に洗浄液を冷却する冷却手段、または洗浄槽の洗
浄液を加熱する加熱手段を備えるものである。[0006] The second polymer removing apparatus according to the present invention comprises:
The above-mentioned first polymer removing apparatus is provided with a cooling means for cooling the cleaning liquid before passing through the filtration section, or a heating means for heating the cleaning liquid in the cleaning tank.
【０００７】本発明に係る第３のポリマー除去装置は、
上記第１または第２のポリマー除去装置において、接触
液が、ＤＧＡ（２―２―アミノエトキシエタノール）、
カテコール、ＤＭＦ（ジメチルフォルムアミド）、ＤＭ
ＳＯ（ジメチルスルオキシド）、１―メチル―２―ピロ
リジノン、ピロカテコール、ＮＭＰ（１―メチル―２―
ピロリドン）またはＤＧＢＥ（ジエチレングリコールｎ
―ブチルエーテル）のものである。[0007] A third polymer removing apparatus according to the present invention comprises:
In the first or second polymer removing device, the contact liquid is DGA (2-2-aminoethoxyethanol),
Catechol, DMF (dimethylformamide), DM
SO (dimethyl sulfoxide), 1-methyl-2-pyrrolidinone, pyrocatechol, NMP (1-methyl-2-
Pyrrolidone) or DGBE (diethylene glycol n)
-Butyl ether).
【０００８】本発明に係る第４のポリマー除去装置は、
上記第１ないし第３のいずれかのポリマー除去装置にお
いて、洗浄液がＩＰＡ（イソプロピルアルコール）であ
り、洗浄槽での温度が２５℃以上、ＩＰＡの沸点未満の
ものである。[0008] A fourth polymer removing apparatus according to the present invention comprises:
In any one of the first to third polymer removing apparatuses, the cleaning liquid is IPA (isopropyl alcohol), and the temperature in the cleaning tank is 25 ° C. or higher and lower than the boiling point of IPA.
【０００９】本発明に係る第５のポリマー除去装置は、
上記第１ないし第４のいずれかのポリマー除去装置にお
いて、洗浄液に超音波を照射するものである。[0009] A fifth polymer removing apparatus according to the present invention comprises:
In any of the first to fourth polymer removing apparatuses, the cleaning liquid is irradiated with ultrasonic waves.
【００１０】本発明に係る第１のポリマー除去方法は、
ウエハに接触液を接触して、上記接触液にウエハ上のポ
リマーを含有させる工程、循環ろ過される洗浄液により
上記ポリマーを含有する接触液を洗浄処理する工程を備
え、上記ろ過部を通過する洗浄液の温度を、上記洗浄処
理部での洗浄液の温度より低温とする方法である。[0010] The first polymer removing method according to the present invention comprises:
A step of contacting a contact liquid with the wafer to cause the contact liquid to contain the polymer on the wafer; and a step of cleaning the contact liquid containing the polymer with a cleaning liquid that is circulated and filtered, wherein the cleaning liquid passes through the filtration unit. Is lower than the temperature of the cleaning liquid in the cleaning section.
【００１１】[0011]
【発明の実施の形態】実施の形態１．本発明の第１の実
施の形態のポリマー除去装置は、ウエハ上のポリマーに
接触液を接触させる接触手段と、上記ポリマーを含有し
た接触液を洗浄液により洗浄処理する洗浄槽と、上記洗
浄槽の洗浄液を循環ろ過する循環ろ過手段よりなり、ろ
過部を通過する洗浄液の温度を洗浄処理部での洗浄液の
温度より低温とするもので、洗浄槽におけるウエハ表面
でのポリマーの析出（凝集）が抑制され、ろ過部で効率
的にポリマーが析出（凝集）する。なお、ろ過部の温度
を例えばポリマーの凝集温度、固化温度等より低く、洗
浄槽の温度を上記温度より高くすると、上記効果が顕著
になる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 The polymer removing apparatus according to the first embodiment of the present invention includes a contact unit for bringing a contact liquid into contact with a polymer on a wafer, a cleaning tank for cleaning the contact liquid containing the polymer with a cleaning liquid, and a cleaning tank for the cleaning tank. It consists of a circulating filtration unit that circulates and filters the cleaning liquid. The temperature of the cleaning liquid passing through the filtration unit is lower than the temperature of the cleaning liquid in the cleaning processing unit, and polymer precipitation (aggregation) on the wafer surface in the cleaning tank is suppressed. As a result, the polymer is efficiently precipitated (agglomerated) in the filtration section. When the temperature of the filtration unit is lower than the coagulation temperature and the solidification temperature of the polymer, for example, and the temperature of the washing tank is higher than the above-mentioned temperature, the above-mentioned effect becomes remarkable.
【００１２】本実施の形態に係わる接触手段としては、
例えば上記接触液を満たした接触槽にポリマーを付着し
たウエハを浸漬する方法がある。なお、接触槽に下記洗
浄槽と同様、循環ろ過手段を備えると、不純物の除去が
効率的に行われる。また接触槽をヒータにより加熱する
と、ポリマーの接触液への含有が容易になる。上記接触
手段としては接触液に浸漬する以外にも、回転するウエ
ハへの液の吐出やスプレーによる接触液の接触も可能で
ある。上記接触液とは、ポリマーに接触することによ
り、溶解または包括（キレート化）することにより上記
ポリマーを含有させるものであり、例えばＤＧＡ（２―
２―アミノエトキシエタノール）、カテコール、ＤＭＦ
（ジメチルフォルムアミド）、ＤＭＳＯ（ジメチルスル
オキシド）、１―メチル―２―ピロリジノン、ピロカテ
コール、ＮＭＰ（１―メチル―２―ピロリドン）または
ＤＧＢＥ（ジエチレングリコールｎ―ブチルエーテル）
を含有するものである。The contact means according to this embodiment includes:
For example, there is a method in which a wafer having a polymer attached thereto is immersed in a contact tank filled with the contact liquid. In addition, if the contact tank is provided with a circulating filtration means, similarly to the washing tank described below, the removal of impurities is efficiently performed. When the contact tank is heated by the heater, the polymer is easily contained in the contact liquid. As the above-mentioned contact means, in addition to immersion in the contact liquid, it is also possible to discharge the liquid to the rotating wafer or contact the contact liquid by spraying. The contact liquid is a solution that contains the polymer by dissolving or entrapping (chelating) the polymer by contact with the polymer. For example, DGA (2-
2-aminoethoxyethanol), catechol, DMF
(Dimethylformamide), DMSO (dimethylsulfoxide), 1-methyl-2-pyrrolidinone, pyrocatechol, NMP (1-methyl-2-pyrrolidone) or DGBE (diethylene glycol n-butyl ether)
It contains.
【００１３】図１は、本実施の形態のポリマー除去装置
に係る洗浄槽と循環ろ過手段を説明する構成図であり、
図において、７は洗浄槽、１０は洗浄液を循環する配
管、１１は洗浄液、１２はポンプ、１３はフィルタ（ろ
過部）、１４はヒータ（加熱手段）、１５は冷却器（冷
却手段）、１６は超音波発信器であり、配管１０、ポン
プ１２およびフィルタ１３で洗浄槽７内の洗浄液１１を
循環ろ過する循環ろ過手段となる。洗浄槽に入れた洗浄
液は槽内に設置したヒータにより加熱されるとともに、
循環経路には、フィルタを通過する前に洗浄液を冷却す
るための冷却器が取り付けてある。FIG. 1 is a configuration diagram illustrating a cleaning tank and a circulating filtration means according to the polymer removing apparatus of the present embodiment.
In the figure, 7 is a cleaning tank, 10 is a pipe for circulating a cleaning liquid, 11 is a cleaning liquid, 12 is a pump, 13 is a filter (filtration unit), 14 is a heater (heating means), 15 is a cooler (cooling means), 16 Denotes an ultrasonic transmitter, which serves as a circulating filtration unit for circulating and filtering the cleaning liquid 11 in the cleaning tank 7 with the pipe 10, the pump 12, and the filter 13. The cleaning liquid in the cleaning tank is heated by the heater installed in the tank,
A cooler for cooling the cleaning liquid before passing through the filter is attached to the circulation path.
【００１４】ろ過部を通過する洗浄液の温度を洗浄処理
部での洗浄液の温度より低温とする方法としては、具体
的には、図１に示すように、洗浄液がろ過部（フィル
タ）を通過する前またはろ過部に、冷却器を備えたり、
洗浄槽を加熱手段により加熱する。また、ろ過後、洗浄
液を加熱するためのヒータを取り付けるとさらに効率が
向上する。冷却手段により、ろ過部を通過する洗浄液が
ポリマーの析出（凝縮）温度以下であると、析出（凝
集）したポリマーがフィルタで効率よく除去され、ポリ
マーを介してウエハ表面に強固に付着する異物の数が減
少する。また、洗浄槽の洗浄液を加熱手段により加熱す
ることによって、ウエハ表面でのポリマーの析出（凝
集）が抑制され、ポリマーを介してウエハ表面に強固に
付着する異物の数が減少するが、冷却手段との併用によ
り効果が増す。As a method for setting the temperature of the cleaning liquid passing through the filtration section to be lower than the temperature of the cleaning liquid in the cleaning processing section, specifically, as shown in FIG. 1, the cleaning liquid passes through the filtration section (filter). Equipped with a cooler in front or in the filtration section,
The cleaning tank is heated by the heating means. Further, after the filtration, if a heater for heating the cleaning liquid is attached, the efficiency is further improved. When the washing solution passing through the filtration unit is at or below the precipitation (condensation) temperature of the polymer by the cooling means, the precipitated (agglomerated) polymer is efficiently removed by the filter, and foreign matter firmly adhering to the wafer surface via the polymer is removed. The number decreases. Further, by heating the cleaning liquid in the cleaning tank by the heating means, precipitation (aggregation) of the polymer on the wafer surface is suppressed, and the number of foreign substances firmly adhering to the wafer surface via the polymer is reduced. The effect increases when used together.
【００１５】上記洗浄液としては、接触液を置換するも
のであればよく、例えばイソプロピルアルコール（ＩＰ
Ａ）、メタノール、アセトン等の有機溶剤を用いること
ができる。The cleaning liquid may be any one that can replace the contact liquid, for example, isopropyl alcohol (IP
A), organic solvents such as methanol and acetone can be used.
【００１６】図２は本実施の形態のポリマー除去装置に
おいて、洗浄液としてＩＰＡを用いた場合、ＩＰＡの温
度による洗浄後のウエハ上の異物数の変化を示す特性図
である。図１に示すように、ウエハと接触するＩＰＡの
温度を２５℃以上とすることにより、ウエハ表面でのポ
リマーの析出（凝縮）が抑制され、ポリマーを介してウ
エハ表面に強固に付着する異物の数は減少するが、沸点
未満とする。また、洗浄に用いる有機溶剤に、超音波を
照射すると、ポリマーを介してウエハ表面に付着する異
物、およびウエハ表面に直接付着した異物の除去も効果
的に行える。FIG. 2 is a characteristic diagram showing a change in the number of foreign particles on a wafer after cleaning according to the temperature of IPA when IPA is used as a cleaning liquid in the polymer removing apparatus of the present embodiment. As shown in FIG. 1, by setting the temperature of the IPA in contact with the wafer to 25 ° C. or higher, the precipitation (condensation) of the polymer on the wafer surface is suppressed, and the foreign matter firmly adhering to the wafer surface via the polymer is suppressed. The number is reduced, but below the boiling point. Further, when ultrasonic waves are irradiated to the organic solvent used for cleaning, foreign substances adhering to the wafer surface via the polymer and foreign substances directly adhering to the wafer surface can be effectively removed.
【００１７】実施の形態２．本発明の第２の実施の形態
のポリマー除去方法は、上記実施の形態のポリマー除去
装置を用い、ウエハを浸漬してポリマーを除去する。具
体的には、ウエハは、接触槽―洗浄槽―水洗槽の順に浸
漬され、最後にスピンドライヤーで乾燥される。Embodiment 2 FIG. In the polymer removing method according to the second embodiment of the present invention, the polymer is removed by immersing the wafer using the polymer removing apparatus according to the above embodiment. Specifically, the wafer is immersed in the order of a contact tank, a washing tank, and a water washing tank, and finally dried by a spin drier.
【００１８】[0018]
【実施例】実施例１．図３は本発明の実施例に用いたウ
エハの構成を示す断面図であり、図中、１はＳｉ基板、
２はＡｌ、３はＴｉＮ、４はＳｉＯ2、５はＳＯＧ（Ｓ
ｐｉｎ―ｏｎ―Ｇｌａｓｓ）である。即ち、８インチの
Ｓｉ基板１にＡｌ配線２（Ａｌ上にはＴｉＮ膜あり）を
形成後、順にＳｉＯ2４、ＳＯＧ（Ｓｐｉｎ―ｏｎ―Ｇ
ｌａｓｓ）５、ＳｉＯ2４の膜を形成し、その後、レジ
ストをマスクにして、ドライエッチングで、順にＳｉＯ
2、ＳＯＧ，ＳｉＯ2、ＴｉＮをエッチングし、バイアホ
ールを形成し、アッシャーにてレジストを除去した。上
記ウエハを用い上記本発明のポリマー除去装置によりウ
エハ上のポリマー除去を行った。[Embodiment 1] FIG. 3 is a perspective view of the cuff used in the embodiment of the present invention.
It is sectional drawing which shows the structure of EHA, wherein 1 is a Si substrate,
2 is Al, 3 is TiN, 4 is SiOTwo, 5 is SOG (S
pin-on-Glass). That is, 8 inches
Al wiring 2 (with TiN film on Al) on Si substrate 1
After formation, the SiOTwo4. SOG (Spin-on-G
las) 5, SiOTwo4 and then the cash register
Using the strike as a mask, dry etching
Two, SOG, SiOTwo, TiN etched, viahole
Then, the resist was removed with an asher. Up
Using the above-described wafer and the polymer removing apparatus of the present invention,
Polymer removal on the eha was performed.
【００１９】接触液として、６５℃に加熱したＤＧＡお
よびカテコールを含有した液｛商品名：ＥＫＣ―２６
５、林純薬工業（株）製｝を用いた。洗浄液として、３
０℃に加熱したイソプロピルアルコールを用いるととも
に、フィルタ部では１０℃になるように冷却した。さら
に槽内にて超音波を照射した。本実施例で処理したウエ
ハの異物検査を行ったところ、０．２μｍ以上の大きさ
の異物数は１００個以下であった。A liquid containing DGA and catechol heated to 65 ° C. as a contact liquid (trade name: EKC-26)
5. Hayashi Junyaku Kogyo Co., Ltd. was used. As a cleaning solution, 3
Isopropyl alcohol heated to 0 ° C. was used, and the filter was cooled to 10 ° C. Further, ultrasonic waves were irradiated in the tank. When a foreign substance inspection of the wafer processed in this example was performed, the number of foreign substances having a size of 0.2 μm or more was 100 or less.
【００２０】実施例２．実施例１においてヒータを用い
ず、室温状態（１８℃）のイソプロピルアルコールを用
いる他は実施例１と同様にしてウエハ上のポリマー除去
を行った。本実施例で処理したウエハの異物検査を行っ
たところ、０．２μｍ以上の大きさの異物数は２００個
程度であった。Embodiment 2 FIG. Polymer removal from the wafer was performed in the same manner as in Example 1 except that isopropyl alcohol at room temperature (18 ° C.) was used without using a heater. When a foreign substance inspection of the wafer processed in this example was performed, the number of foreign substances having a size of 0.2 μm or more was about 200.
【００２１】実施例３．実施例１において、３０℃に加
熱したイソプロピルアルコールを用い、冷却器を用いな
い他は実施例１と同様にしてウエハ上のポリマー除去を
行った。本実施例で処理したウエハの異物検査を行った
ところ、０．２μｍ以上の大きさの異物数は２００個程
度であった。Embodiment 3 FIG. In Example 1, the polymer on the wafer was removed in the same manner as in Example 1 except that isopropyl alcohol heated to 30 ° C. was used and a cooler was not used. When a foreign substance inspection of the wafer processed in this example was performed, the number of foreign substances having a size of 0.2 μm or more was about 200.
【００２２】比較例１．実施例１において、室温状態
（１８℃）のイソプロピルアルコールを用い、冷却器を
用いない他は実施例１と同様にしてウエハ上のポリマー
除去を行った。本比較例で処理したウエハの異物検査を
行ったところ、０．２μｍ以上の大きさの異物数は５０
０個以上であった。Comparative Example 1 In Example 1, the polymer on the wafer was removed in the same manner as in Example 1 except that isopropyl alcohol at room temperature (18 ° C.) was used and a cooler was not used. When a foreign substance inspection of the wafer processed in this comparative example was performed, the number of foreign substances having a size of 0.2 μm or more was 50
There were zero or more.
【００２３】[0023]
【発明の効果】本発明の第１のポリマー除去装置は、ウ
エハ上のポリマーに接触液を接触させ上記接触液に上記
ポリマーを含有させる接触手段、上記ウエハ上の接触液
を除去して洗浄処理する洗浄液を有する洗浄槽、および
上記洗浄液を循環ろ過する循環ろ過手段を備え、上記ろ
過部を通過する洗浄液の温度を、上記洗浄処理部での洗
浄液の温度より低温とするもので、ウエハ上の異物が減
少するという効果がある。According to the first polymer removing apparatus of the present invention, a contact means for bringing a contact liquid into contact with a polymer on a wafer so that the contact liquid contains the polymer, and a cleaning treatment by removing the contact liquid on the wafer A cleaning tank having a cleaning liquid to be cleaned, and a circulating filtration unit for circulating and filtering the cleaning liquid, wherein the temperature of the cleaning liquid passing through the filtration unit is lower than the temperature of the cleaning liquid in the cleaning processing unit. There is an effect that foreign matter is reduced.
【００２４】本発明の第２のポリマー除去装置は、上記
第１のポリマー除去装置において、ろ過部を通過する以
前に洗浄液を冷却する冷却手段、または洗浄槽の洗浄液
を加熱する加熱手段を備えたもので、ウエハ上の異物が
減少するという効果がある。[0024] The second polymer removing apparatus of the present invention, in the above first polymer removing apparatus, is provided with a cooling means for cooling the cleaning liquid before passing through the filtration unit or a heating means for heating the cleaning liquid in the cleaning tank. Therefore, there is an effect that foreign matter on the wafer is reduced.
【００２５】本発明の第３のポリマー除去装置は、上記
第１または第２のポリマー除去装置において、接触液
が、ＤＧＡ（２―２―アミノエトキシエタノール）、カ
テコール、ＤＭＦ（ジメチルフォルムアミド）、ＤＭＳ
Ｏ（ジメチルスルオキシド）、１―メチル―２―ピロリ
ジノン、ピロカテコール、ＮＭＰ（１―メチル―２―ピ
ロリドン）またはＤＧＢＥ（ジエチレングリコールｎ―
ブチルエーテル）のもので、ウエハ上の異物が減少する
という効果がある。The third polymer removing device of the present invention is the first or second polymer removing device, wherein the contact liquid is DGA (2-2-aminoethoxyethanol), catechol, DMF (dimethylformamide), DMS
O (dimethyl sulfoxide), 1-methyl-2-pyrrolidinone, pyrocatechol, NMP (1-methyl-2-pyrrolidone) or DGBE (diethylene glycol n-
Butyl ether), which has the effect of reducing foreign matter on the wafer.
【００２６】本発明の第４のポリマー除去装置は、上記
第１ないし第３のいずれかのポリマー除去装置におい
て、洗浄液がＩＰＡであり、洗浄槽での温度が２５℃以
上、ＩＰＡの沸点未満のもので、ウエハ上の異物が減少
するという効果がある。A fourth polymer removing apparatus according to the present invention is the polymer removing apparatus according to any one of the first to third polymers, wherein the cleaning liquid is IPA and the temperature in the cleaning tank is 25 ° C. or higher and lower than the boiling point of IPA. Therefore, there is an effect that foreign matter on the wafer is reduced.
【００２７】本発明の第５のポリマー除去装置は、上記
第１ないし第４のいずれかのポリマー除去装置におい
て、洗浄液に超音波を照射するもので、ウエハ上の異物
が減少するという効果がある。The fifth polymer removing apparatus according to the present invention, in any one of the first to fourth polymer removing apparatuses, irradiates the cleaning liquid with ultrasonic waves, and has an effect of reducing foreign matter on the wafer. .
【００２８】本発明の第１のポリマー除去方法は、ウエ
ハに接触液を接触して、上記接触液にウエハ上のポリマ
ーを含有させる工程、循環ろ過される洗浄液により上記
ポリマーを含有する接触液を洗浄処理する工程を備え、
上記ろ過部を通過する洗浄液の温度を、上記洗浄処理部
での洗浄液の温度より低温とする方法で、ウエハ上の異
物が減少するという効果がある。In the first method for removing a polymer according to the present invention, a contact liquid is brought into contact with a wafer, and the polymer on the wafer is contained in the contact liquid. Washing process,
In a method in which the temperature of the cleaning liquid passing through the filtration unit is lower than the temperature of the cleaning liquid in the cleaning processing unit, there is an effect that foreign substances on the wafer are reduced.
【図１】 本発明の実施の形態１のポリマー除去装置に
係る洗浄槽と循環ろ過手段を説明する構成図である。FIG. 1 is a configuration diagram illustrating a cleaning tank and a circulating filtration unit according to a polymer removing device according to a first embodiment of the present invention.
【図２】 本発明の実施の形態１のポリマー除去装置に
おいて、ＩＰＡの温度による洗浄後のウエハ上の異物数
の変化を示す特性図である。FIG. 2 is a characteristic diagram showing a change in the number of foreign particles on a wafer after cleaning according to the temperature of IPA in the polymer removing apparatus according to the first embodiment of the present invention.
【図３】 本発明の実施例に用いたウエハの構成を示す
断面図である。FIG. 3 is a cross-sectional view illustrating a configuration of a wafer used in an example of the present invention.
７ 洗浄槽、１１ 洗浄液、１２ ポンプ、１３ フィ
ルタ、１４ ヒータ、１５ 冷却器、１６ 超音波発信
器。7 cleaning tank, 11 cleaning liquid, 12 pump, 13 filter, 14 heater, 15 cooler, 16 ultrasonic transmitter.
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｂ０８Ｂ 3/10 Ｂ０８Ｂ 3/10 Ｚ 3/12 3/12 Ｚ Ｈ０１Ｌ 21/306 Ｈ０１Ｌ 21/306 Ｊ Ｆターム(参考） 3B201 AA03 AB01 BB04 BB82 BB83 BB92 BB95 CC01 CC13 CC21 CD22 5F043 AA40 BB30 CC20 EE01 EE05 EE21 EE22 EE24 EE25 GG02 GG04 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) B08B 3/10 B08B 3/10 Z 3/12 3/12 Z H01L 21/306 H01L 21/306 J F term (reference) 3B201 AA03 AB01 BB04 BB82 BB83 BB92 BB95 CC01 CC13 CC21 CD22 5F043 AA40 BB30 CC20 EE01 EE05 EE21 EE22 EE24 EE25 GG02 GG04
Claims (6)
上記接触液に上記ポリマーを含有させる接触手段と、上
記ウエハ上の接触液を除去して洗浄処理する洗浄液を有
する洗浄槽と、上記洗浄液を循環ろ過する循環ろ過手段
とを備え、上記循環ろ過手段のろ過部を通過する洗浄液
の温度を、上記洗浄処理部での洗浄液の温度より低温と
するポリマー除去装置。1. A contact means for contacting a polymer on a wafer with a contact liquid to contain the polymer in the contact liquid, a cleaning tank having a cleaning liquid for removing and cleaning the contact liquid on the wafer, and the cleaning liquid And a circulating filtration means for circulating filtration of the cleaning liquid, wherein the temperature of the cleaning liquid passing through the filtration section of the circulating filtration means is lower than the temperature of the cleaning liquid in the cleaning processing section.
る冷却手段、または洗浄槽の洗浄液を加熱する加熱手段
を備えることを特徴とする請求項１に記載のポリマー除
去装置。2. The polymer removing apparatus according to claim 1, further comprising a cooling unit that cools the cleaning liquid before passing through the filtration unit, or a heating unit that heats the cleaning liquid in the cleaning tank.
キシエタノール）、カテコール、ＤＭＦ（ジメチルフォ
ルムアミド）、ＤＭＳＯ（ジメチルスルオキシド）、１
―メチル―２―ピロリジノン、ピロカテコール、ＮＭＰ
（１―メチル―２―ピロリドン）またはＤＧＢＥ（ジエ
チレングリコールｎ―ブチルエーテル）であることを特
徴とする請求項１または請求項２に記載のポリマー除去
装置。3. A contact solution comprising DGA (2-2-aminoethoxyethanol), catechol, DMF (dimethylformamide), DMSO (dimethylsulfoxide),
-Methyl-2-pyrrolidinone, pyrocatechol, NMP
The polymer removing apparatus according to claim 1 or 2, wherein the apparatus is (1-methyl-2-pyrrolidone) or DGBE (diethylene glycol n-butyl ether).
ル）であり、洗浄槽での温度が２５℃以上、ＩＰＡの沸
点未満であることを特徴とする請求項１ないし請求項３
のいずれかに記載のポリマー除去装置。4. The cleaning liquid is IPA (isopropyl alcohol), and the temperature in the cleaning tank is 25 ° C. or higher and lower than the boiling point of IPA.
The polymer removing device according to any one of the above.
する請求項１ないし請求項４のいずれかに記載のポリマ
ー除去装置。5. The polymer removing apparatus according to claim 1, wherein the cleaning liquid is irradiated with ultrasonic waves.
にウエハ上のポリマーを含有させる工程、循環ろ過され
る洗浄液により上記ポリマーを含有する接触液を洗浄処
理する工程を備え、上記ろ過部を通過する洗浄液の温度
を、上記洗浄処理部での洗浄液の温度より低温とするポ
リマー除去方法。6. The method according to claim 1, further comprising the steps of: contacting the contact liquid with the wafer to cause the contact liquid to contain the polymer on the wafer; and washing the contact liquid containing the polymer with a cleaning liquid that is circulated and filtered. A method for removing a polymer, wherein the temperature of the cleaning liquid passing through the cleaning section is lower than the temperature of the cleaning liquid in the cleaning processing section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000301964A JP2002110617A (en) | 2000-10-02 | 2000-10-02 | Polymer-removing apparatus and method therefor using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000301964A JP2002110617A (en) | 2000-10-02 | 2000-10-02 | Polymer-removing apparatus and method therefor using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002110617A true JP2002110617A (en) | 2002-04-12 |
Family
ID=18783411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000301964A Pending JP2002110617A (en) | 2000-10-02 | 2000-10-02 | Polymer-removing apparatus and method therefor using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002110617A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8141567B2 (en) * | 2006-01-20 | 2012-03-27 | Kabushiki Kaisha Toshiba | Apparatus and method for photoresist removal processing |
| CN110404869A (en) * | 2019-08-12 | 2019-11-05 | 陆阳清 | A kind of cleaning method and cleaning equipment of solar energy silicon crystal slate |
| KR20210131659A (en) * | 2020-04-24 | 2021-11-03 | 세메스 주식회사 | Substrate treating apparatus and liquid supplying method |
-
2000
- 2000-10-02 JP JP2000301964A patent/JP2002110617A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8141567B2 (en) * | 2006-01-20 | 2012-03-27 | Kabushiki Kaisha Toshiba | Apparatus and method for photoresist removal processing |
| CN110404869A (en) * | 2019-08-12 | 2019-11-05 | 陆阳清 | A kind of cleaning method and cleaning equipment of solar energy silicon crystal slate |
| CN110404869B (en) * | 2019-08-12 | 2020-11-10 | 江苏润祁项目管理有限公司 | Cleaning method and cleaning equipment for solar silicon crystal plate |
| KR20210131659A (en) * | 2020-04-24 | 2021-11-03 | 세메스 주식회사 | Substrate treating apparatus and liquid supplying method |
| KR102622445B1 (en) | 2020-04-24 | 2024-01-09 | 세메스 주식회사 | Substrate treating apparatus and liquid supplying method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3690619B2 (en) | Cleaning method and cleaning device | |
| JP3277404B2 (en) | Substrate cleaning method and substrate cleaning apparatus | |
| TWI377453B (en) | Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing | |
| JP3940742B2 (en) | Cleaning method | |
| JP2001074374A (en) | Dryer and drying method | |
| JP2007201330A (en) | Substrate-treating device | |
| KR20000077032A (en) | Method of and apparatus for washing photomask and washing solution for photomask | |
| KR100597656B1 (en) | Cleaning method and apparatus for manufacturing semiconductor device | |
| JP2002110617A (en) | Polymer-removing apparatus and method therefor using the same | |
| TW200946254A (en) | Cleaning method and cleaning system for electronic part | |
| KR100891631B1 (en) | Apparatus and method for photoresist removal processing | |
| TW420850B (en) | Process for production of semiconductor device and cleaning device used therein | |
| JPS58200540A (en) | Cleaning method for semiconductor wafer | |
| US20070151582A1 (en) | Supercritical fluid washing method and system | |
| JP4766836B2 (en) | Photomask substrate cleaning method | |
| JP2010117403A (en) | Method for cleaning photomask-related substrate | |
| CN103852977B (en) | Immersion lithography machine infiltrates automatic flushing device and the cleaning method of parts | |
| JP2010117412A (en) | Method for cleaning photomask-related substrate | |
| JPH09213672A (en) | Semiconductor wafer processing apparatus and treatment | |
| JPH0985197A (en) | Washer | |
| JP3009006B2 (en) | Equipment for drying semiconductor substrates | |
| JP7113671B2 (en) | Defoaming device and defoaming method | |
| JP2002231685A (en) | Wafer-cleaning and drying device | |
| JP2001015468A (en) | Processing method of substrate and chemical processing system | |
| JP3753452B2 (en) | Drainer / dryer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20040707 |