JP2002093697A - Device and method for setting exposure conditions, and processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and a method for setting exposure conditions, which can increase production efficiency by decreasing man-hours by automating exposure conditioning and improve the quality of a product, and to provide a processor equipped with the exposure condition setting device. SOLUTION: The exposure condition setting device exposes multiple positions of a substrate in a specific pattern with different exposure quantities and focus values, converts the state of the development pattern formed by the development into light information, and determines the best combination of an exposure quantity and a focus value, according to the light information. In concrete, the exposure conditioning device 80 has a light irradiation part 81, which irradiates, for example, a specific range of the development pattern formed on a substrate, such as a semiconductor wafer with light having constant intensity, a detection part 82 which measures the intensity of reflected light in the specific irradiated range, and an arithmetic processing part 83 which determines exposure conditions by retrieving places having been exposed with the proper exposure quantity and focus value according to the reflected light intensity.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, an exposure condition setting apparatus and method for setting exposure conditions in a photolithography process in a semiconductor device manufacturing process, and a process including the exposure condition setting apparatus. Related to the device.

[0002]

2. Description of the Related Art For example, in a photolithography step in a semiconductor device manufacturing process, a resist film is formed on the surface of a semiconductor wafer (wafer), and then the resist film is exposed to light in a predetermined pattern. By performing the development processing, a predetermined pattern is formed on the wafer.

Prior to performing this exposure processing, usually, an operation of setting exposure conditions for setting an exposure amount and a focus value to optimal values is performed. This is because the condition of the exposure apparatus, for example, the intensity of light source, stability, optical path length, and the like are slightly changed. Therefore, even if the set value on the operation panel of the exposure apparatus is fixed, as a result, it is not necessarily on the wafer. This is because a developed pattern having the same shape accuracy is not always obtained. Therefore, this exposure condition setting is:
This is an indispensable operation for forming a predetermined pattern on a product, and is regularly performed at intervals of, for example, one week or one day.

[0004] General exposure conditions are determined, for example, according to the following steps. That is, first, on a single wafer on which a resist film is formed, using a mask (reticle) on which a predetermined pattern is formed, the exposure amount is changed in the column direction, and the focus value is changed in the row direction. To expose with a mask pattern. Next, the exposed wafer is baked and further developed, and the obtained developed pattern is observed with a scanning electron microscope (SEM) or the like. Then, an exposure condition that gives the best development pattern is determined from the observation result.

[0005]

However, the measurement of the line width of a fine pattern on a mask or a wafer is performed by a length measurement SE.
In determining exposure conditions using M, the operator needs to be proficient in the operation of the length measurement SEM, and the time required to determine a measured value differs depending on the operator. For this reason, it takes a long time to determine the optimal exposure conditions, and it is difficult to increase the production efficiency. Also, the selection of the optimum exposure condition differs depending on the operator, and the exposure condition is sequentially changed.

Further, in recent years, the complexity of the exposure process has increased the number of steps for determining the exposure conditions, and the exposure conditions have been prolonged. Therefore, it is desired to shorten the exposure condition determination time. Furthermore, in order to quickly find out a failure of the exposure apparatus or a change in condition and maintain a high product quality and improve a yield, a development pattern obtained in a photolithography process has a predetermined shape accuracy. It is desired to check in real time whether or not there is.

The present invention has been made in view of the above circumstances, and it is possible to reduce man-hours and increase production efficiency by automating exposure condition setting, and to maintain exposure quality of a product. It is an object of the present invention to provide a condition setting device, an exposure condition setting method, and a processing apparatus provided with the exposure condition setting device.

[0008]

According to a first aspect of the present invention, there is provided an exposure condition determining apparatus used for determining exposure conditions in a photolithography process, wherein a plurality of different positions on a substrate are exposed in a predetermined pattern by different exposure methods. Exposure with an amount and a focus value, converting the state of the developed pattern formed by development into optical information, and determining a combination of an optimal exposure amount and a focus value from the optical information, And an exposure condition setting device.

[0009] According to a second aspect of the present invention, the predetermined pattern is formed by using a mask on which the predetermined pattern is formed.
A plurality of different positions on a substrate are exposed with different exposure amounts and focus values, and thereafter, an exposure condition setting device that sets exposure conditions using a substrate that has been developed, wherein a predetermined range of a development pattern formed on the substrate is provided. A light irradiating unit for irradiating light of a predetermined intensity, a detecting unit for detecting light information of a predetermined area in the predetermined range, and a position exposed by an optimal exposure amount and a focus value from the light information. And an arithmetic processing unit for searching and determining an optimal exposure condition.

According to a third aspect of the present invention, there is provided a method for setting exposure conditions in a photolithography step, wherein a first step of exposing a plurality of positions on a substrate in a predetermined pattern with different exposure amounts and focus values; A second step of converting a state of a development pattern formed by developing the substrate into optical information; and a third step of determining an optimal combination of exposure amount and focus value from the optical information. Exposure condition setting method.

According to a fourth aspect of the present invention, there is provided a method for determining exposure conditions in a photolithography step, wherein a plurality of different positions on a substrate are exposed at different positions with a predetermined pattern using a mask having the predetermined pattern formed thereon. A first step of exposing the substrate with a focus value, a second step of developing the substrate to form a development pattern, and irradiating a predetermined range of the development pattern with light of a constant intensity to reflect light of the reflected light. A third step of obtaining information; and comparing the optical information with information prepared by visual observation and reference data prepared in advance including optical information, to obtain an optimal exposure from a combination of an exposure amount and a focus value in the first step. A fourth step of determining an amount and an optimum focus value.

According to a fifth aspect of the present invention, there is provided a method for determining exposure conditions in a photolithography step, wherein a plurality of different positions on a substrate are exposed to different amounts of light using a mask having a predetermined pattern formed thereon. A first preparation step of exposing the substrate with a focus value, a second preparation step of developing the substrate to form a reference development pattern, and a third step of observing the reference development pattern by SEM to obtain shape information of the reference development pattern. A preparatory step, a fourth preparatory step of irradiating a predetermined range of the reference development pattern with light of a constant intensity to obtain optical information relating to the reflected light,
A fifth preparation step of creating reference data in association with the optical information obtained in the preparation step; and a predetermined preparation step on the substrate according to the same steps as the first preparation step and the second preparation step. A first step of forming a development pattern;
A second step of irradiating a predetermined range of light of the development pattern with light of a constant intensity to obtain light information on the reflected light, and comparing the light information with the reference data to adjust the exposure amount and focus in the first step. There is provided an exposure condition setting method, comprising: a main step having a third step of determining an optimum exposure amount and an optimum focus value from a combination of values.

According to a sixth aspect of the present invention, there is provided a processing apparatus having a development processing section for developing an exposed substrate, the processing apparatus comprising: Exposure with a value, further converts the state of the developed pattern formed by development in the development processing unit into optical information, and comprises an exposure condition setting device that determines an optimal exposure amount and a focus value from the optical information. A processing device characterized by performing the following.

According to a seventh aspect of the present invention, there is provided a processing apparatus having a development processing section for performing development processing of an exposed substrate, the processing apparatus comprising:
In the predetermined pattern, a plurality of different positions of the substrate are exposed at different exposure amounts and focus values, after that, comprising an exposure condition setting device that performs exposure condition setting using the substrate developed in the development processing unit, An exposure condition setting device, a light irradiating unit that irradiates a predetermined range of the development pattern formed on the substrate with light having a predetermined intensity, and a detection unit that detects light information of a predetermined region in the predetermined range, A processing apparatus comprising: an arithmetic processing unit that searches a position exposed by an optimal exposure amount and a focus value from the optical information to determine an optimal exposure condition.

According to an eighth aspect of the present invention, a resist coating section for forming a resist film on a substrate, an exposure apparatus for performing an exposure process on the substrate on which the resist film is formed, and an exposure apparatus using the exposure apparatus A developing section for developing the exposed substrate, and exposing a plurality of different positions of the substrate in a predetermined pattern with different exposure amounts and focus values using the exposure apparatus, and developing and forming the same in the developing section. By converting the state of the developed pattern into optical information, an exposure condition setting device that determines the optimal exposure amount and focus value from the optical information and feeds back the optimal exposure amount and optimal focus value to the exposure device, A processing device comprising:

According to a ninth aspect of the present invention, a resist coating section for forming a resist film on a substrate, a developing section for developing the exposed substrate, In the pattern, a plurality of different positions of the substrate on which the resist film is formed are exposed with different exposure amounts and focus values, and thereafter, the state of the developed pattern formed by development processing in the development processing unit is converted into optical information. And an exposure condition determining device for determining an optimal exposure amount and a focus value from the optical information.

According to a tenth aspect of the present invention, a resist coating unit for forming a resist film on a substrate, a developing unit for developing the exposed substrate, In the pattern, a plurality of different positions on the substrate on which the resist film is formed are exposed with different exposure amounts and focus values, and thereafter, the state of the developed pattern formed on the substrate by performing development processing in the development processing unit as optical information. Determining a processing condition in the resist coating processing section and / or the developing processing section from the optical information detecting device to be detected and the optical information detected by the optical information detecting apparatus, and applying the determined processing condition to the resist coating processing And / or a coating / development control unit that feeds back to the development processing unit.

According to the present invention, the conventional SEM
Exposure conditions that have been determined by human judgment based on observation results can be automatically performed using optical information such as the intensity of reflected light, thereby reducing man-hours and improving production efficiency. It becomes possible. Further, for example, in addition to the conventional exposure condition setting such as once a day to once a week, it becomes easy to check the exposure condition at a predetermined timing such as several hours, and it is possible to maintain high product quality. It becomes possible. Further, when the optical information obtained in the exposure condition determination is far from the reference data measured in advance, the exposure apparatus and the resist coating / processing for performing a series of processing are used.
Since it is suggested that a failure in the development processing system or a failure has occurred in the exposure condition determining device, it is possible to find out and deal with the failures of these various devices at an early stage from the optical information.

The exposure condition determining device can be disposed in the same box as the processing section for performing resist coating and developing processing, or can be disposed in the exposure device. In this way, it is possible to monitor the formation state of the development pattern in real time in parallel with the resist coating process and the like, so that the quality of the product can be kept high. If the configuration is such that a warning is issued when the difference between the detected light information and the reference data is large,
It is possible to find out a failure of the apparatus as soon as possible, and the number of substrates to be processed wastefully is reduced.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings by taking a photolithography process of a semiconductor wafer (wafer) as an example.
FIG. 1 is a flowchart showing an exposure condition setting process using the exposure condition setting device according to the present invention. The exposure condition determining method according to the present invention comprises a preparation step (left column in FIG. 1) and a main step of determining the exposure condition for providing an optimal development pattern by checking the condition of an exposure apparatus before performing exposure processing on an actual product. (Right column in FIG. 1).

First, the preparation process will be described. In setting exposure conditions, first, a wafer on which a resist film is formed is prepared. After a hydrophobizing process (HMDS process) for improving the fixing property of the resist is performed on the wafer as required, a resist solution is applied to the wafer to form a resist film on the wafer surface (step 1). This resist film is formed, for example, by suction-fixing the wafer to a spin chuck, supplying the resist liquid to the center of the wafer while rotating the spin chuck at a predetermined number of revolutions, and applying the resist liquid to the peripheral edge of the wafer by centrifugal force. This is done using a spread-out method. After removing the resist adhering to the back surface and the peripheral portion of the wafer, the wafer is subjected to a heat treatment and then cooled to fix the resist film.

Test exposure for determining the optimum exposure condition is performed using the wafer on which the resist film has been formed (step 2). This test exposure is performed by sequentially exposing different positions on the wafer with different focus values and exposure amounts using a predetermined test pattern formed on a mask (reticle) using an exposure apparatus (stepper). For example, as shown in FIG. 2, a grid matrix 95 of 11 columns × 11 rows is set, and focus values (Y1 to Y1
By changing the exposure amount (X1 to X11) in the row direction and changing the exposure amount (X1 to X11), the test pattern 60 shown in FIG.

The test pattern 60 shown in FIG. 3 has different patterns (regions) of patterns A to G.
In the patterns A to G, within a certain width N, the width ratio of the linear light shielding portion 61 is P, and the width ratio of the transmission portion 65 is Q.
Assuming that (the sum of P and Q is 100), as shown in FIG. 3, the ratio is 7 in the range of P: Q = 95: 5 to 5:95.
It is a step change. For example, the constant width N is 0.5 μ
m. The ratio between the width ratio P of the light-shielding portion 61 and the width ratio Q of the transmission portion 65 is not limited to the value shown in FIG. 3 and can be formed in an arbitrary ratio in a plurality of stages.
By providing more sub-patterns by increasing the number of division steps for each width ratio P · Q, more accurate and precise exposure conditions can be determined.

The test pattern used in the test exposure in step 2 is not limited to the linear pattern shown in FIG. Test pattern 60 shown in FIG.
In each of the patterns A to G, a linear transmission portion 65 is formed only in the vertical direction. However, like the columnar pattern 60a shown in FIG. A pattern in which the light-shielding portions 61a are formed in a matrix and the transmission portions 65a are formed between the light-shielding portions 61a can also be used. Further, as shown in a hole pattern 60b shown in FIG. 4B, a transparent portion 65b of a predetermined shape is arranged at a predetermined position in the light shielding portion 61b, and is formed so that the occupied area of the transparent portion 65b changes. A pattern or the like can be used.

Next, the wafer subjected to the test exposure is developed using the test pattern 60 (step 3). In the development process, for example, the wafer is suction-fixed to a spin chuck, the developing solution is poured on the wafer, and after a predetermined time has elapsed, the developing solution on the wafer is shaken off by rotating the wafer, and then the rinsing solution is applied to the wafer. Is carried out by a method of washing away the residue of the developing solution.

After drying the developed wafer,
Observation of the shape of the obtained developed pattern is performed using, for example, a scanning electron microscope (SEM) or a length measuring SEM to determine an optimal exposure condition (step 4). In this SEM observation, a portion (exposed portion) exposed by light transmitted through the transmitting portion 65 formed in the patterns A to G, and a portion not exposed because light to be exposed by the light shielding portion 61 is blocked (non-exposed portion) The range in which resolution (identification) with the test pattern 60 is possible is wide, and the shape of the developed pattern is
Exposure conditions in which a developed pattern is formed with high accuracy are searched for.

Here, the developed pattern actually formed on the wafer is not necessarily the pattern 60 formed on the mask.
Does not match. This will be described in detail below, taking as an example a case where a positive resist is used as the resist.

FIG. 5 is an explanatory diagram showing the relationship between the transmitted and light-shielded portions of the test pattern and the signal level of the obtained reflected light intensity, and the development pattern corresponding to the test pattern at that time. FIG. FIG. 7 is an explanatory diagram showing how a development pattern obtained by a change in the focus value changes when the focus value is an appropriate value. FIG. FIG. 5 is an explanatory diagram showing how a developed pattern changes.

In the case of a positive resist, the portion irradiated with light to be exposed is dissolved by development, so that as shown in FIG. 66 are formed. On the other hand, the portions not irradiated with the light for exposure are projected portions 6 because the resist remains.
It becomes 2. Therefore, when a certain pattern in the test pattern 60 is transferred as it is, the light-shielding portion 61 matches the convex portion 62 and the transmissive portion 65 matches the concave portion 66.

However, even if the focus value and the exposure amount are appropriate, depending on the wavelength of the light to be exposed, the actual width (length) of the pattern formed on the mask, and the like, FIG. As described above, the development patterns of the patterns A to G are not necessarily formed in all the exposure regions A1 to G1 based on the patterns A to G. In other words, FIG.
As shown in the segment 90b of FIG. 7, even with the proper focus value and the proper exposure amount, in the patterns A and B,
Since the actual size width of the transmitting portion 65 is narrow, the light to be exposed cannot pass through the mask, and no concave portions 66 are formed in the exposed regions A1 and B1 by the patterns A and B, and the entirety is formed of a resist film. The part 62 will be formed. Also, when the resist cannot be exposed to such an extent that the resist is dissolved by the developing process because the amount of light that can be transmitted through the transmitting portion 65 is small, similarly, the concave portions 66 are not formed in the exposure regions A1 and B1 by the patterns A and B. .

On the other hand, in the pattern G in which the line width of the transmissive portion 65 is large, the amount of light transmitted through the mask is large, so that the resist is exposed in the entire exposure region G1 by the pattern G, and the entire surface of the wafer is exposed. (A state in which the convex portion 62 is not formed). Also, the light transmitted through the transmitting portion 65 is diffused or the like, so that the entire surface of the wafer G is exposed in the entire exposure region G1 by the pattern G. Thus, when the test pattern 60 is actually used, the exposure area where the exposure part and the non-exposure part can be resolved, for example, even if both the focus value and the exposure amount are appropriate, the patterns C to F Exposure area C1 based on
A result of F1 is obtained.

The segments 90d and 90e in FIG. 6 show the development patterns obtained when the underfocus value and the overfocus value are obtained, respectively. In any case, since the exposure amount is appropriate but the focus value is not appropriate, light transmitted through the patterns A to G is diffused and the shape accuracy when transferring the patterns A to G is reduced. It shows the state where it is. Specifically, in the segments 90d and 90e in FIG. 6, the concave portion 66 is not formed not only in the exposure regions A1 and B1 but also in the exposure region C1, while the convex portions 62 are not formed in the exposure region F1. Is shown. Thus, as a result, the exposure regions D1 and E
Resolution is possible with only 1, and the resolvable range is narrower than in the case of the segment 90b under appropriate exposure conditions.

On the other hand, as shown by the segment 90a in FIG. 7, if the exposure value is small (underexposure amount) even if the focus value is an appropriate value, the resolvable pattern is not transmitted. The actual width of the portion 65 shifts to a wider one. For example, exposure regions D1 to F based on patterns D to F
1 is a resolvable range. On the other hand, as shown in the segment 90c, when the exposure amount is large (over-exposure), the pattern that can be resolved shifts to the narrower actual size width of the transmission portion 65. The exposure areas B1 to E1 are the resolvable ranges.

When the focus value is set appropriately as described above, the resolvable range shifts in the direction in which the width of the transmission portion 65 is narrow or wide.
If the exposure amounts are different, the transmission portions 6 in the patterns A to G
5 and the actual width of the concave portion 66 in the obtained development pattern.

For example, the exposure area D1 based on the pattern D
The ratio of the width ratio P · Q in the pattern D is P: Q = 50: 50.
As shown in the figure, the projections 62 of the same width
And a recess 66 are preferably formed.

However, in the case of the underexposure amount (segment 90a), the width of the concave portion 66 is smaller than the width of the convex portion 62, while the overexposure amount (segment 90c).
In the case of the width of the concave portion 66 is wider than the width of the convex portion 62,
A desired development pattern cannot be obtained.

From the above, in the SEM observation in step 4, the influence of such a combination of the focus value and the exposure amount on the shape of the developed pattern is taken into consideration.
The optimum exposure condition is determined in consideration of the set dimensions of the patterns A to G in the test pattern 60. For example, in the examples of FIGS. 6 and 7, the resolution range is wide and the pattern D
Convex portion 62 and concave portion 66 formed in an exposure region D1 based on
The focus value and the exposure amount that can obtain the state of the segment 90b having the same width of the optimum focus value and the optimum exposure amount,
That is, it is determined as the optimum exposure condition.

According to FIGS. 6 and 7, the optimum exposure conditions based on the SEM observation will be the exposure conditions under which the development pattern of the segment 90b can be obtained when the test pattern 60 is used. In addition, patterns C to C that form exposure regions C1 to F1 that allow resolution of an exposed portion and a non-exposed portion are possible.
A combination of the minimum value and the maximum value of the width ratio Q of the transmission portion 65 in F is defined as a set of optimum width ratios Cb. The set of optimum width ratios and the set of width ratios described later can also be determined using the width ratio P of the light-shielding portion 61. In the segment 90b, the value 30 of the width ratio Q of the pattern C is the minimum value, and the value 80 of the width ratio Q of the pattern F is the maximum value.
Is represented as “Cb (30 · 80)”.

The exposure condition setting method based on the SEM observation in step 4 described above is the same as the conventional exposure condition setting method. In the present invention, it must be performed as one of the preparation steps.

However, according to the exposure condition setting method of the present invention, for example, when performing the next exposure condition setting, in order to eliminate this work, in addition to the SEM observation, By collecting at least the optical information of the developed pattern obtained under the optimal exposure conditions,
The obtained optical information is standardized (step 5), and the standardized optical information is associated with the exposure conditions determined by SEM observation (step 6).

As the optical information, for example, the intensity of reflected light (reflectance) when a developed pattern is irradiated with light having a predetermined intensity, the pattern of interference fringes, and the like can be used. It is assumed that reflected light intensity is used as optical information. In this case, step 5 and step 6
Information on the state (form, shape) of the developed pattern obtained by performing SEM observation on each of the exposure regions A1 to G1 of each segment 90 of the lattice matrix 95 shown in FIG. This is the step of conversion.

FIG. 6 shows the optimum exposure conditions based on SEM observation.
8 and the segment 90b in FIG. 7 are described again, and the measurement of the reflected light intensity and the normalization of the obtained measurement value will be described with reference to FIG.

First, light of a predetermined intensity is applied to the entire segment 90b or each of the exposure regions A1 to G1 based on the patterns A to G, and the reflected light intensity in the set range S in the exposure regions A1 to G1 is measured. I do. The configuration of the apparatus (exposure condition setting apparatus) used at this time will be described later in detail.

It is clear from the result of SEM observation that both the exposure regions A1 and B1 are formed of the projections 62 made of only the resist film. Therefore, the reflected light intensities of the exposure areas A1 and B1 show almost the same value. In the exposure area C1, the concave portion 66
Is formed, a part of the surface of the wafer is exposed, and the reflectance of light from the wafer surface is higher than the reflectance of light from the resist film surface. It becomes larger than the reflected light intensity of the exposure areas A1 and B1.

Further, as the exposure area of the wafer increases from the exposure area D1 to the exposure area F1, the measured reflected light intensity increases, and the resist film is completely dissolved to completely expose the wafer surface. The largest reflected light intensity can be obtained in the exposed area G1 that has been lost.

Since the reflected light intensity of the exposure region G1 indicates the reflected light intensity of the wafer, this value is assumed to be an invariable value, and the reflected light intensity of the exposed region G1 is used as a reference. The value of the reflected light intensity of G1 is normalized. For example, as shown in FIG. 8, normalization of the measured reflected light intensity is performed by setting the reflected light intensity of the exposure region G1 to 100, and 20.20.5 in the exposure regions A1 to G1, respectively.
A standard value of 5, 60, 65, 70, 100 (hereinafter referred to as "normalized strength") is obtained.

Next, the obtained normalized strength value is associated with the width ratio Q of the transmission portion 65 in the patterns A to G. FIG. 9 is an explanatory diagram showing the form of this association.
In order to perform this work, the boundary between the exposure region consisting of only the convex portion 62 and the exposure region where the convex portion 62 and the concave portion 66 are mixed, or the exposure region where the convex portion 62 and the concave portion 66 are mixed from FIG. "Lower threshold (Lb)" and "upper threshold (Lt)" of the normalized intensity are set as indices for judging the boundary between and the exposure region consisting of only concave portion 66.

In the pattern for forming the exposure region having the normalized intensity between the lower threshold (Lb) and the upper threshold (Lt), the smallest value of the width ratio Q of the transmission portion 65 is set to the lower value. The width ratio (Qb) is set, and the largest value is set as the upper width ratio (Qt). Further, the combination of the lower width ratio (Qb) and the upper width ratio (Qt) is defined as a set of width ratios C, and this 1
The width ratio C of the set is represented as C (Qb · Qt). These values are used in the main step of setting the exposure conditions.

The lower threshold value (Lb) is between the normalized intensities of the exposure regions B1 and C1, and the upper threshold value (Lt) is the exposure value so as not to cause inconsistency with the SEM observation result of the segment 90b. It is determined between the normalized intensities of the areas F1 and G1. For example, the lower threshold (Lb) is more than 20 5
The lower threshold value (Lb) can be set to 40, which is an intermediate value, although it can be determined in a range of 5 or less. In the case of the segment 90b, the normalized strength is 40
The width ratio Q (=) of the pattern C that forms the exposure region C1 that has the normalized intensity 55 having the minimum value
30) becomes the lower width ratio (Qb = 30).

The upper threshold (Lt) is 70 or more and 10
For example, if the upper threshold (Lt) is set to 80, the exposure area F1 in which the normalized intensity is 80 or less and the normalized intensity 70 having the largest value is shown. Width ratio Q (= 8) of pattern F forming
0) is the upper limit width ratio (Qt = 80).

In this manner, one set of width ratio C (Qb · Qt), which is a combination of the lower width ratio (Qb) and the upper width ratio (Qt) obtained for the segment 90b, is naturally
This corresponds to one set of the optimum width ratio Cb (30 · 80) determined by the above-described SEM observation.

Note that the smallest value of the normalized strength (in FIG. 8, the value of the normalized strength (= 20) corresponding to the exposure areas A1 and B1) is, for example, the thickness of the resist film to be formed. May be changed by a minute change in For this reason, since the set lower threshold value (Lb) is small, in a later main process, a pattern that forms an exposure area where the surface of the wafer is not actually exposed at all is formed by the concave portion 66 and the convex portion 62. Care should be taken when setting the lower threshold value Lb so that the determination that the resolution is within the possible range does not occur.

By the above steps 1 to 6, the lower threshold (Lb), the upper threshold (Lt), and one set of the optimum width ratio Cb
(Lower width ratio (Qb) / Upper width ratio (Qt)) is determined,
These values serve as criteria for data analysis in setting exposure conditions for the next and subsequent times (step 7). Further, the optimal exposure conditions (focus value and exposure amount) determined by SEM observation can be used as initial conditions for starting the measurement of the reflected light intensity when shortening the time required for exposure condition determination.

Next, with respect to each segment 90 of the lattice matrix 95 shown in FIG.
1 is measured and normalized, and the lower width ratio Qb for the lower threshold Lb (= 40) and the upper width ratio Qt for the upper threshold Lt (= 80) are determined, FIG.
In step S8, data is displayed in a matrix.

Here, it is preferable that the SEM observation is also performed for each segment 90 of the lattice matrix 95 shown in FIG. In other words, the work of this step 8
This is to confirm the correlation between the result of the SEM observation and the exposure condition setting method by measuring the reflected light intensity, and is not necessarily required in the preparation step, but the reflected light intensity measurement according to the present invention is performed. This is important in the sense of confirming the reliability of the exposure condition setting method using, and is performed for that purpose.

FIG. 10 shows the data from step 8 as a matrix. FIGS. 10A and 10B
Therefore, for example, under the exposure conditions of the exposure amount X5 and the focus value Y5, the lower width ratio (Qb) is 50, and the upper width ratio (Q
Since t) is 70, the convex portions 62 and the concave portions 66 are present in the exposure regions D1 and E1 based on the patterns D and E,
It can be seen that only the convex portions 62 exist in the exposure regions A1 to C1, and only the concave portions 66 exist in the exposure regions FG.
This state indicates that it is in the same state as the segment 90d or the segment 90e previously shown in FIG.

Under the exposure conditions of the exposure amount X7 and the focus value Y6, the upper width ratio (Qt) is 70 and the lower width ratio (Qb) is 20, so that the exposure regions B1 to E1 of the patterns B to E are provided. The convex portion 62 and the concave portion 66 are formed by
In the exposure area A1, only the convex portion 62 exists, and the exposure area F1
-It turns out that only the recessed part 66 exists in G1.
This state indicates that the segment 90c previously shown in FIG. 7 is in the same state.

As described above, the obtained developed pattern is
The range of the pattern in which the exposure part and the non-exposure part in the patterns A to G can be resolved by the M observation is shown in FIG. 10A and FIG.
From, you can know immediately. According to the result of the SEM observation, since the exposure condition giving the state of the segment 90b shown in FIG. 6 is the optimal exposure condition, the lower width ratio (Q
When the exposure conditions in which b) is 30 and the upper width ratio (Qt) is 80 are retrieved from FIGS. 10A and 10B, it can be seen that the focus value Y6 and the exposure amount X6 are the optimum exposure conditions.

In order to easily find the optimum exposure condition from FIGS. 10A and 10B, as shown in FIG. 10C, the values of FIG. A matrix showing values obtained by subtracting the values shown in FIG. As described above with reference to FIGS. 5 and 6, if the focus value is appropriate, the number of patterns capable of resolving an exposed portion and a non-exposed portion increases.
It can be determined that the exposure condition when the value shown in (c) is large is close to an appropriate condition. In this way, it becomes easy to narrow down the exposure conditions.

For example, in FIG. 10C, since the value 50 is the largest value, the optimum exposure condition is easily narrowed down when the focus value is Y6 and the exposure amount is in the range of X6 to X8. However, for example, when one set of width ratios C is C (30 · 80) and C (20 · 70), the difference between them is 50.

Therefore, when the maximum values in FIG. 10C are the same, a set of optimum width ratios Cb (30.80) is obtained from the values in FIGS. 10A and 10B. Select the exposure conditions. That is, in the case of FIG. 10C, one set of the width ratio C (Qb · Qt) is changed to one set of the optimum width ratio Cb (30.8).
The value that matches 0) is only when the exposure amount is X6, and thus the optimum exposure condition can be determined.

As is clear from the above description, the processes from step 1 to step 8 convert the state of the developed pattern determined by SEM observation into information called reflected light intensity, and further standardized data (hereinafter referred to as “standardized data”). , “Reference data”), and it is possible to search for the optimal exposure condition from the reference data.

Here, a description will be given of the form of reference data creation in the above-described preparation step and the configuration of the exposure condition setting device used in the main step described later. FIG. 11 is an explanatory diagram showing one embodiment of the configuration of the exposure condition setting device 80 of the present invention. This exposure condition setting device 80
Are roughly divided into a light irradiating section 81 for irradiating a certain range of light on a certain range of a development pattern formed on the wafer W, and a detecting section for measuring a reflected light intensity of a predetermined range of the wafer W irradiated with the light. 82, and an arithmetic processing unit 83 for processing the intensity of the reflected light obtained by the detection unit 82.

The light irradiating section 81 includes a light source and a reflector capable of irradiating only light having a narrow band wavelength of light emitted from a halogen lamp, a metal halide lamp, a fluorescent lamp, an incandescent lamp or the like, for example, a wavelength of 400 to 600 nm. A light source device 84 and an optical fiber 85 for guiding light from the light source device 84 to the wafer W are provided. Light emitted from the optical fiber 85 is condensed by a mirror and a lens (not shown) provided in the optical path adjusting unit 86. The irradiation is performed on a certain range of the wafer W, for example, the entirety of one segment 90.

At this time, the wafer W is placed on, for example, an XY stage (not shown), and moves in parallel in a plane so that a predetermined range of the wafer W falls within a range irradiated with light. Is possible.

The detecting section 82 measures the reflected light intensity in a set range S (refer to the set range S shown in FIG. 8; not shown in FIG. 11) within the fixed range irradiated with a fixed amount of light. The device includes, for example, a CCD camera or a line sensor 87, and transfers image information captured by the CCD camera or the line sensor 87 to the CCD camera or the line sensor 8
The signal is converted into reflected light intensity by using a signal conversion device such as an electric board 88 connected to the signal board 7. Thus, the reflected light intensity in the setting range S can be obtained.

The line sensor is a camera for scanning the CCD elements linearly in a line, and can acquire the same information as the CCD camera. As shown in FIG. 5, the signal level of the reflected light intensity is large in the concave portion 66 where the surface of the wafer W is exposed.
Conversely, it becomes smaller at the portion of the protrusion 62 covered with the resist.

The obtained reflected light intensity is subjected to calculation processing in the arithmetic processing unit 83 to calculate a normalized intensity. A specific example of the arithmetic processing unit 83 is a personal computer.
The movement of the wafer W (the driving of the XY stage) and the reading of the signal by the electric board 88 can be automatically performed by the signal from the arithmetic processing unit 83.

For example, after reading the reflected light intensity of one segment 90 formed on the wafer W, the wafer is moved by a predetermined amount by a signal from the arithmetic processing section 83, and the reflected light intensity of another exposure area is again measured. Operations such as measurement can be repeated. The arithmetic processing unit 83 can perform the process of normalizing the reflected light intensity in parallel with the measurement of the reflected light intensity.

By comparing the normalized intensity obtained by using the exposure condition setting device 80 with the upper threshold (Lt) and the lower threshold (Lb) determined in the above-described preparation step. , The state of the setting range S for giving the normalized intensity, that is, whether or not the exposed portion and the non-exposed portion can be resolved can be known. Thus, for the wafer W whose reflected light intensity has been measured, information on the combination of the lower width ratio (Qb) and the upper width ratio (Qt) as shown in FIGS. 10A and 10B is obtained. be able to.

Next, the main steps of the exposure condition determining method of the present invention will be described. In this main process, although the above-described exposure condition setting device and the reference data determined in the above-described preparation process are used, SEM observation is not required.

As shown in the right column of FIG. 1, first, a resist film is formed on a test wafer (test wafer) prior to starting exposure processing of a product wafer (step 9). As shown in FIG. 2, each of the plurality of segments 90 constituting the grid matrix 95 on the test wafer is exposed using the test pattern 60 with different focus values and exposure amounts (step 1).
0) Then, the test wafer is developed and dried to form a developed pattern (Step 11).

Next, the reflected light intensity is measured and standardized for the exposure regions A1 to G1 based on the patterns A to G of the test pattern 60 for each segment 90 by using the exposure condition setting device 80 (step). 12). At this time, the value of the obtained normalized strength is equal to the lower threshold (Lb = 4
0) or more and not more than the upper threshold (Lt = 80), it is determined that the resolution of the exposed portion and the non-exposed portion has been possible. Further, the lower width ratio (Qb) is obtained from the width ratio Q of the transmission portion of the pattern forming the exposure region in which such resolution is possible.
And the upper width ratio (Qt) is obtained (step 13).

The resist film formed on the test wafer must be formed to the same thickness as the resist film formed on the wafer in the preparatory step using the same type of resist solution. As the reference data, a plurality of reference data corresponding to the respective conditions when there are a plurality of resist solutions to be used and when the thickness of the resist film to be formed is different are prepared according to Steps 1 to 8 as appropriate.

For all the segments 90, the values of the lower width ratio (Qb) and the upper width ratio (Qt) and their differences are obtained, and a set of optimum width ratios Cb ( 30/80) is detected, and
A new optimal exposure condition can be determined (step 14).

When the reflected light intensity is measured for all the segments 90 in accordance with steps 9 to 14, even if automation is possible, it is inevitable that a long time is required for setting exposure conditions. Therefore, focusing on the characteristic of the exposure apparatus that the condition of the exposure apparatus changes over time but does not change extremely, in step 12 described above, the optimal exposure determined in the preliminary process is determined. The reflected light intensity is measured only for the segment 90 where the developed pattern formed under the exposure condition close to the condition exists. Even by such a method, generally, it is possible to detect the optimum exposure condition, and it is possible to shorten the time required for setting the exposure condition.

FIGS. 12A to 12C show the focus value Y.
6. Steps 9 to 14 are performed for 15 exposure conditions near the exposure amount X6, and the lower width ratio (Qb), the upper width ratio (Qt), and the difference between the lower and upper width ratios are shown.

The reflected light intensity is automatically measured and normalized for the segment 90 corresponding to these 15 exposure conditions.
The obtained normalized intensity value is compared with an upper threshold value (Lt) and a lower threshold value (Lb), and a pattern for providing an exposure area within a range in which an exposed portion and a non-exposed portion can be resolved is obtained. The values of the upper width ratio (Qt) and the lower width ratio (Qb) are determined. A set of optimum width ratios Cb for providing optimum exposure conditions is Cb (30
80), it can be seen from FIGS. 12A to 12C that the focus value Y5 and the exposure amount X7 satisfying the conditions are optimal exposure conditions.

As described above, in addition to the method of mapping the upper width ratio (Qt) and the lower width ratio (Qb) for a plurality of segments 90, a method of searching for an optimal exposure condition starting from one exposure condition is also available. is there. For example, the optimal exposure amount / optimal focus value determined in the preparation process is used as an initial condition for narrowing the exposure area where the reflected light intensity is to be measured in the exposure condition determination in the main process, and the provisional condition is sequentially changed to the initial condition. Is determined, and if the provisional condition does not change, it is determined that the provisional condition is the actual optimum exposure condition.

In such a method, one of the optimal exposure amount / optimal focus value of the initial condition, for example, the optimal exposure amount is temporarily fixed as the provisional exposure amount, and the reflected light intensity of the exposure area according to the focus value in the predetermined range. Is measured, and the optimum width ratio Cb (30.8) is obtained from the obtained reflected light intensity.
A set of width ratios C ′ (Qt · Qb) close to 0) is determined. Subsequently, one set of width ratios C ′ (Qt · Qb) is determined.
Is fixed as a provisional focus value under the exposure condition that gives the value, and the reflected light intensities of a plurality of exposure regions where the exposure amount is changed are measured, and the optimum width ratio Cb (30 · 8) is measured.
A set of width ratios C ″ (Qt · Qb) close to 0) is determined.

Here, one set of width ratios C ′ (Qt · Qb)
And the set of width ratios C ″ (Qt · Qb) is the same, and when the optimum width ratio Cb (30 · 80) is obtained,
The exposure condition that gives this set of width ratios C ′ (Qt · Qb) is the optimal exposure condition. Also, one set of width ratio C ′ (Qt
When the conditions of Qb) and one set of width ratios C ″ (Qt · Qb) are different, the exposure amount under the exposure condition that gives one set of width ratios C ″ (Qt · Qb) is updated as a provisional exposure amount. The optimum exposure condition can be narrowed by repeating the method of obtaining one set of width ratios C ′ (Qt · Qb) from the initial conditions and further obtaining one set of width ratios C ″ (Qt · Qb).

FIGS. 13A to 13C show mapping results of the lower width ratio (Qb) and the upper width ratio (Qt) finally obtained by such a method and their differences. Since the optimum exposure conditions obtained in the preparation step were the focus value Y6 and the exposure amount X6, for example, first, the focus value was fixed to the focus value Y6, and the exposure amounts X4 to X
8, the reflected light intensity is measured, the normalized intensity is calculated, and the upper width ratio (Qt) and the lower width ratio (Qb) are changed.
Make a decision.

If a condition having a set of optimum width ratios Cb (30 · 80) is obtained within the range in which the normalized intensity is calculated, the exposure condition setting ends at that time. However, when there is no set of optimum width ratios Cb, for the exposure amount that gives a condition where the difference between the upper width ratio (Qt) and the lower width ratio (Qb) is large, this time, the focus value is changed and the upper width ratio is changed. (Qt)
And the lower width ratio (Qb) are determined.

In the case of FIGS. 13A and 13B, the case of the exposure amount X6 and the case of the exposure amount X7 correspond, for example,
The upper width ratio (Qt) and the lower width ratio (Qb) are obtained by changing the focus value Y4 to Y7 in the case of the exposure amount X6 which is the optimum exposure amount in the preparation stage. However, since there was no exposure condition in which the difference between the upper width ratio (Qt) and the lower width ratio (Qb) was 50 in the case of the exposure amount X6, for example, in the case of the exposure amount X6, For the focus value Y5 at which the difference between the width ratio (Qt) and the lower width ratio (Qb) becomes larger, the upper width ratio (Qt) and the lower width ratio (Qb) are obtained again, for example, in the range of the exposure amounts X5 to X9.

In the case of the focus value Y5, the difference between the upper width ratio (Qt) and the lower width ratio (Qb) becomes 50 under the two conditions of the exposure amounts X7 and X8.
5. One set of width ratio C (Q under the exposure condition of exposure amount X7
Since t · Qb) coincides with one set of optimum width ratios Cb (30 · 80), it is understood that this exposure condition is the optimum exposure condition.

For example, the exposure conditions near the focus value Y5 and the exposure amount X7, which are the optimum exposure conditions, for example, the normalized intensity when the focus value is Y4 and the exposure amounts are X7 and X8 are obtained. By obtaining the width ratio (Qt) and the lower width ratio (Qb), it is possible to confirm that the exposure conditions of the focus value Y5 and the exposure amount X7 are optimal exposure conditions.

The values of the normalized intensities of the exposure areas A1 to G1 based on the patterns A to G formed under the optimum exposure conditions determined by the above-described various methods are obtained by the optimum exposure conditions determined in the preparation process. It is preferable to confirm whether or not the value is close to the set value of the normalized strength. For example, in the segment 90b obtained in the preparation process, the normalized intensity of the exposure regions C1 to F1 is 55 or more and 70 or more.
Since it was within the following range, the exposure area C in the segment formed by the focus value Y5 and the exposure amount X7, which are the optimal exposure conditions determined in the main process described above.
By checking whether or not the normalized intensity of 1 to F1 is almost within the range of 55 or more and 70 or less, it is possible to improve the accuracy of setting the exposure conditions.

The focus value Y determined in the main process
5. Even if the normalized intensity of the exposure areas C1 to F1 in the segment formed by the exposure amount X7 falls within the range of 55 to 70, an extremely narrow value range, for example, 60 to 65. Or within a narrow range of 65 or more and 70 or less, the exposure area C1
There is a high possibility that the actual size of the convex portion 62 and the concave portion 66 formed in F1 to F1 deviate from the actual size of the light shielding portion 61 and the transmissive portion 65 of the patterns C to F.

In order to detect such a situation, if the preparatory process is followed, the normalized intensity of the exposure region based on the pattern giving the lower width ratio (Qb) is 50 or more, more strictly 50 or more and 60 or less. It is also preferable to configure the exposure condition setting device 80 so that a limit is set and an alarm is issued when this condition is not satisfied.

Further, the standardized intensity of the exposure area based on the pattern giving the upper width ratio (Qt) is limited to 75 or less, more strictly 65 to 75, and a warning is issued even when this condition is not satisfied. If the exposure condition setting device 80 is configured to emit light, the accuracy of setting the exposure condition according to the present invention can be further improved, which is preferable.

When the formation of the resist film, the exposure processing to the resist film, the development processing of the exposed wafer W, and the exposure condition determining device 80 are operating normally, the above-described main steps are not performed. By the exposure condition setting method, the same exposure condition as the optimum exposure condition determined in the preparation step can be obtained. However, for example, in a plurality of segments having different exposure conditions formed on the test wafer for exposure condition determination, a development pattern having a shape equivalent to the development pattern under the optimal exposure condition determined in the preparation process is not detected. A situation is also assumed.

The cause of such a situation is considered to be various failures in the exposure apparatus, such as defective adjustment of a light source and an optical system in the exposure apparatus, damage to a mask, and the like.
Since the malfunction or failure of the light source device 84, the CCD camera or the line sensor 87 of the exposure condition determining device 80 is also considered,
Conversely, based on the result of the exposure condition determining method of the present invention, it is possible to inspect the exposure apparatus and the exposure condition determining apparatus to be used, and to maintain a good use state. Even when such a situation occurs, for example, a measure such as issuing an alarm can be taken.

Although the exposure condition determining apparatus and the exposure condition determining method of the present invention have been described above, the exposure condition determining apparatus of the present invention can be used not only as a single unit but also, for example, in an exposure apparatus. It is possible to add them together. In addition, the exposure condition setting device
It is also possible to provide the inside of the development processing system, and it is also possible to adopt a configuration in which the wafer after the development processing is transferred to the exposure condition determination device, and the exposure condition determination is automatically performed.

For example, FIG.
FIG. 15 is a schematic plan view showing a resist coating / developing processing system 1 provided with the above. The resist coating / developing processing system 1 receives a wafer W between a cassette station 10 as a transfer station, a processing station 11 having a plurality of processing units, and an exposure apparatus 50 provided adjacent to the processing station 11. And an interface unit 12 for passing.

The cassette station 10 carries a plurality of wafers W as objects to be processed, for example, in units of 25 wafers W, into a wafer cassette CR, and loads the wafers W from another system into the resist coating / developing processing system 1, or This is for carrying the wafer W between the wafer cassette CR and the processing station 11, such as carrying out the wafer W from the resist coating / developing processing system 1 to another system.

In the cassette station 10, as shown in FIG. 14, a plurality of (four in the figure) positioning projections 20a are formed on the mounting table 20 in the X direction in the figure. The wafer cassettes CR can be placed in a line with their respective wafer entrances facing the processing station 11 side. In the wafer cassette CR, the wafers W are arranged in a vertical direction (Z direction). Further, the cassette station 10 has a wafer transfer mechanism 21 located between the mounting table 20 and the processing station 11.

The wafer transfer mechanism 21 has a wafer transfer arm 21a movable in the cassette arrangement direction (X direction) and the arrangement direction of the wafers W therein (Z direction). Thus, any one of the wafer cassettes CR can be selectively accessed. Further, the wafer transfer arm 21a is configured as shown in FIG.
It is configured to be rotatable in the θ direction shown therein, and can also access an alignment unit (ALIM) and an extension unit (EXT) belonging to a _third processing unit M3 on the processing station 11 side described later. I have.

On the other hand, the processing station 11
A plurality of processing units for performing a series of steps of performing coating and development on the wafer W are provided in multiple stages at predetermined positions, and the wafers W are processed one by one. As shown in FIG. 14, the processing station 11 has a wafer transfer path 22a in the center,
The main wafer transfer mechanism 22 is provided therein, and all the processing units are arranged around the wafer transfer path 22a. The plurality of processing units are divided into a plurality of processing units, and each processing unit includes a plurality of processing units arranged in multiple stages along a vertical direction (Z direction).

The main wafer transfer mechanism 22 includes a cylindrical support 49.
A wafer transfer device 46 is provided inside the inside of the device so as to be vertically movable (Z direction). The cylindrical support 49 is rotatable by a rotational driving force of a motor (not shown).
Accordingly, the wafer transfer device 46 can also be integrally rotated. The wafer transfer device 46 includes a plurality of holding members 48 movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48.

[0100] Further, as shown in FIG. 14, in this embodiment, four unit _{M 1 · M 2 · M 3} · M 4 are actually arranged around the wafer transport path 22a. Of these, the first and second processing units M ₁ and M ₂ are arranged in parallel on the front (front side in FIG. 14) side of the resist coating and developing processing system 1, and the third processing unit M ₃ is a cassette station 10 And a fourth processing unit M
₄ is arranged adjacent to the interface section 12.

In the resist coating / developing processing system 1
For example, as shown in FIG.
Four processing units M actually arranged around₁・ M₂・ M₃
・ M ₄In addition to the above, a fifth processing unit M₅Is arranged
The fifth processing unit M₅At the position
The exposure condition setting device 80 is attached.
You. In this manner, the wafer W on which development has been completed is
8, the wafer W is placed on the exposure condition setting device 80.
Transfer to and from an XY table (not shown)
It is possible to do.

[0102] The processing unit M ₅ of the fifth is adapted to be movable relative to the main wafer transfer mechanism 22 laterally along the guide rail 25, therefore, provided a processing unit M ₅ of the fifth, the Even when the exposure condition setting device 80 is arranged in the field, a space is secured by sliding the exposure condition setting device 80 along the guide rail 25, so that maintenance work can be easily performed from behind the main wafer transfer mechanism 22. Can be.

[0103] In the first processing unit _{M 1,} a coater cup (C
In P), there are provided a resist coating unit (COT), which is two spinner-type processing units for performing a predetermined process by placing the wafer W on a spin chuck (not shown), and a developing unit (DEV) for developing a resist pattern. 2 from the bottom
It is piled up on the steps. Similarly, the second processing unit M _2, the resist coating unit (COT) and a developing unit (DEV) are two-tiered in order from the bottom as two spinner-type processing units.

[0104] In the third processing unit M _3, for example, the oven-type processing units of the wafer W is placed on a mounting table SP performs a predetermined process can be arranged in multiple stages. For example, a cooling unit (COL) for performing a cooling process, an adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of a resist, an alignment unit (ALIM) for performing alignment, and loading / unloading of the wafer W are performed. An extension unit (EXT) to be performed and a hot plate unit (HP) that performs a heating process on the wafer W before and after the exposure process and after the development process can be sequentially stacked.

[0105] The fourth processing unit M ₄ is also configured to oven type processing units stacked in multiple stages. For example, a cooling unit (COL), an extension cooling unit (EXTCOL) which is a wafer loading / unloading section equipped with a cooling plate, and an extension unit (EX)
T), the cooling unit (COL), and the hot plate unit (HP) can be arranged in an overlapping manner.

The interface section 12 moves in the depth direction (X
Direction) has the same length as the processing station 11. As shown in FIGS. 14 and 15, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is disposed at the center. The wafer transfer mechanism 24 has a wafer transfer arm 24a. The wafer transfer arm 24a moves in the X direction and the Z direction to be able to access both cassettes CR / BR and the peripheral exposure device 23. I have.

The wafer transfer arm 24a is rotatable in the θ direction.
Extension unit (EXT) to be placed in ₄
Further, the wafer delivery table (not shown) of the adjacent exposure apparatus 50 can be accessed. Further, the arrangement position of the exposure condition setting device 80 is not limited to the _fifth processing unit M5. For example, it can be arranged in the exposure device 50 or adjacent to the exposure device 50, Further, any portion may be provided as long as a wafer can be transferred by various wafer transfer mechanisms disposed in the resist coating / developing processing system 1.

In the step of determining exposure conditions using the resist coating / developing processing system 1 described above, first, in the cassette station 10, the wafer transfer arm 21 a of the wafer transfer mechanism 21 moves the unprocessed wafer on the mounting table 20. The wafer cassette CR accommodating the wafer W is accessed, one wafer W (test wafer) is taken out, and the extension unit (E) arranged in the _third processing unit M3 is taken out.
XT).

The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22. Then, after being aligned by the third placed in the processing unit M ₃ the alignment unit (ALIM), is conveyed to the adhesion process unit (AD), where hydrophobic treatment for enhancing adhesion of the resist (HMDS treatment) Is applied. Since this process involves heating, the wafer W is then transferred to a cooling unit (COL) by the wafer transfer device 46 and cooled.

In some cases, depending on the type of resist used, the wafer W is directly transferred to the resist coating unit (COT) without performing the HMDS process.
For example, there is a case where a polyimide-based resist is used.

The processing in the adhesion processing unit (AD) is completed, and the wafer W or the adhesion processing unit (A) cooled in the cooling unit (COL) is completed.
The wafer W not subjected to the processing in D) is subsequently transferred by the wafer transfer device 46 to a resist coating unit (COT), where the resist is applied to form a coating film. After the coating process is completed, the wafer W is pre-bake treatment at the third or the fourth processing unit M ₃ · M ₄ hot plate unit which is located either in the (HP), then any one of the cooling units (COL) Cooled by.

The cooled wafer W is supplied to the third processing unit M ₃
Is transported to an alignment unit (ALIM) arranged in the fourth processing unit M ₄
Is transported to the interface unit 12 via the extension unit (EXT) arranged in the printer.

In the interface section 12, after peripheral exposure is performed by the peripheral exposure apparatus 23 to remove excess resist, the exposure apparatus 50 provided adjacent to the interface section 12 uses the aforementioned test pattern 60 to perform A test exposure process is performed on the resist film of the wafer W to determine optimal exposure conditions.

The exposed wafer W is returned to the interface section 12 again, and the extension unit (E) disposed in the _fourth processing section M ₄ is moved by the wafer transfer mechanism 24.
XT). Then, the wafer W is transferred to the hot plate unit (HP) by the wafer transfer device 46, subjected to post-exposure bake processing, and then cooled by the cooling unit (COL).

Thereafter, the wafer W is transferred to the developing unit (DE
V), where the exposure pattern is developed. After the development is completed, the wafer W is transferred to one of the hot plate units (HP) and subjected to post-baking, and then cooled by the cooling unit (COL). After such a series of processing is completed, the wafer W
The out fifth processing unit M ₅ to arranged exposure conditions apparatus 80
Where the optimum exposure condition is determined based on the measurement of the reflected light intensity, the result is fed back to the exposure device 50, and the operation condition of the exposure device 50 is reset,
Processing of the product wafer W is started.

Note that the test wafer is transferred to the third processing unit M ₃
Is returned to the cassette station 10 via the extension unit (EXT) arranged in the wafer cassette CR, and stored in any one of the wafer cassettes CR.

With such a resist coating / developing processing system 1, a test wafer is appropriately transported into the resist coating / developing processing system 1 during the processing of a product, and the exposure conditions are adjusted or the resist is properly adjusted. It is possible to diagnose a failure of the coating / developing processing system 1.

Further, if the above-mentioned exposure condition determining method is used, for example, the measurement of the reflected light intensity can be performed for a specific range of the development pattern formed on the wafer W as a product, in which the development pattern is formed in a good shape. The standardized intensity obtained by performing the standardization is used as a reference value, the reflected light intensity is measured for a specific range of the wafer W to be sequentially processed, and the result is compared with a predetermined reference value. In addition, a processing method in which the processing is performed while confirming the formation state of the development pattern for all the wafers W is also possible. If such an exposure condition setting method is used,
More thorough product quality control becomes possible,
Reliability is improved.

Although the present invention has been described above, the present invention is not limited to the above embodiment. For example, in the test pattern 60 used to determine the exposure conditions, the width ratio P · Q of the light-shielding portion 61 and the transmission portion 65 was changed in seven stages of patterns A to G, but the pattern was formed in more stages. Thereby, it is possible to further improve the accuracy of setting the exposure conditions.

In test pattern 60, patterns A to G
Although the light shielding portion 61 and the transmission portion 65 are formed in a range of a constant width N of 0.5 μm, the constant width N is not limited to such a value. Furthermore, for example, the width ratio P · Q of the light shielding portion 61 and the transmission portion 65 is the same, and the constant width N
Can be formed side by side to form two different patterns, and the form of the developed pattern in the exposure area obtained under a certain exposure condition can be further finely limited.

Further, in place of the linear test pattern 60 shown in FIG. 3, the columnar and hole-like test patterns 60a and 60b shown in FIGS. 4A and 4B can be used. . Furthermore, these test patterns 60
a · 60b is a pattern in which the boundary between the light-shielding portion 61 and the transmission portion 65 is formed using a straight line.
The boundary between and the transmission portion 65 may be formed using a curve. For example, the shape of the transmissive portion 65 shown in FIG. 4B can be a circle or the like instead of a square.

It is preferable that the exposure condition setting device 80 be provided with a plurality of light sources. For example,
Using a light source including a plurality of narrow-band wavelength light sources having different wavelength regions, an appropriate one of the plurality of narrow-band wavelength light sources is selected in accordance with the actual dimensions such as the width of the transmission portion formed in the test pattern. By selecting and using a narrow-band wavelength light source,
It is possible to obtain information on the intensity of reflected light that more accurately reflects the shape of the development pattern formed on the wafer. For example, when the width of the transmitting portion formed in the test pattern is narrow, light having a short wavelength is used so that the transmitting portion can be transmitted. In the case where an exposure condition determining apparatus including a light source including a plurality of narrow-band wavelength light sources is used, there is an advantage that the measurement of the reflected light intensity with respect to the multilayer film can be performed more accurately.

The exposure condition determining device 80 feeds back the determined exposure conditions to the exposure device 50, and
Not only can be used to change the exposure conditions at the optimum conditions, but also the resist coating unit (CO
T) and the processing conditions in the developing unit (DEV) can be changed.

FIG. 16 shows a resist coating unit (COT) and a developing unit (DE) using an exposure condition determining device 80.
FIG. 5 is an explanatory diagram illustrating a configuration of a system that changes a processing condition of V). For example, the exposure condition setting device 80 may be configured so that the development pattern obtained when the exposure condition in the exposure device 50 is fixed is the same as the development pattern formed under the optimum exposure condition without changing the exposure condition.
Sends a command to the developing unit control device 98 to change the development processing time or change the temperature of the developing solution, and the development unit control device 98 changes the development processing time and the like according to this command.

The exposure condition setting device 80 sends commands to the resist coating unit control device 99 such as a change in the number of revolutions of the wafer and a change in the temperature of the resist solution in order to spread the resist solution over the entire wafer. The control device 99 changes the number of rotations of the wafer and the like according to the command. Thus, it is possible to form a good development pattern on the wafer. In the above description, exposure condition determination using a semiconductor wafer as a substrate has been described.
The present invention can also be used effectively for determining the exposure conditions of an LCD substrate.

[0126]

As described above, according to the present invention, the conventional S
Exposure conditions that were determined by human judgment from the results of EM observation can be automatically performed using optical information such as the intensity of reflected light, etc., thus reducing man-hours and improving production efficiency. The remarkable effect that it becomes possible is obtained. Further, for example, in addition to the conventional exposure condition setting such as once a day to once a week, it becomes easy to check the exposure condition at a predetermined timing such as several hours, and it is possible to maintain high product quality. A possible effect is also obtained.

Further, if the optical information obtained in the exposure condition determination is far from the pre-data, a failure of the exposure apparatus or a resist coating / developing processing system for performing a series of processing or a failure of the exposure condition determination apparatus occurs. Therefore, by obtaining optical information, it is possible to detect failures of these various devices at an early stage and to deal with them.
Furthermore, the exposure condition setting device can be disposed in the same box as the processing section for performing the resist coating and developing processes, or can be disposed in the exposure device. In this way, it is possible to monitor the formation state of the development pattern in real time in parallel with the resist coating process and the like, so that the quality of the product can be kept high. If the configuration is such that a warning is issued when the difference between the detected light information and the reference data is large,
This makes it possible to quickly find a failure in the apparatus, and the effect of reducing the number of substrates to be wasted can be obtained.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram (flowchart) showing an embodiment of an exposure condition setting process using an exposure condition setting device according to the present invention.

FIG. 2 is an explanatory diagram showing a lattice matrix and segments in which a focus value is changed in a column direction and an exposure amount is changed in a row direction.

FIG. 3 is a plan view showing one embodiment of a test pattern on a mask used for exposure.

FIG. 4 is a plan view showing another embodiment of a test pattern on a mask used for exposure.

FIG. 5 shows a transmission part and a light shielding part of a test pattern;
FIG. 6 is an explanatory diagram showing a relationship between an obtained reflected light intensity and a signal level and a development pattern corresponding to a test pattern at that time.

FIG. 6 is an explanatory diagram showing a development pattern obtained by changing a focus value when an exposure amount is an appropriate value.

FIG. 7 is an explanatory diagram showing a development pattern obtained by changing an exposure amount when a focus value is an appropriate value.

FIG. 8 is an explanatory diagram showing a segment 90b shown in FIGS. 6 and 7;

FIG. 9 is an explanatory diagram showing an association between the value of the normalized intensity and the width ratio of the transmission portions of the patterns A to G in the test pattern.

FIG. 10 is an explanatory diagram showing a lower width ratio and an upper width ratio obtained under each exposure condition and their differences in a matrix.

FIG. 11 is an explanatory view showing one embodiment of the configuration of the exposure condition setting device of the present invention.

FIG. 12 is an explanatory diagram showing a matrix in which a lower width ratio, an upper width ratio, and a difference between the lower width ratio and the upper width ratio are obtained for a part of exposure conditions.

FIG. 13 is another explanatory diagram showing a matrix in which a lower width ratio, an upper width ratio, and a difference between the lower width ratio and the upper width ratio are obtained for a part of exposure conditions.

FIG. 14 is a plan view showing an embodiment of a resist coating / developing processing system including the exposure condition determining apparatus according to the present invention.

15 is a side view of the resist coating / developing processing system shown in FIG.

FIG. 16 is an explanatory diagram showing a control configuration of a resist coating / developing processing system by the exposure condition determining device of the present invention.

[Explanation of symbols]

 1; resist coating / developing processing system 61; light shielding portion 62; convex portion 65; transmissive portion 66; concave portion 80; exposure condition setting device 81; light irradiating portion 82; detecting portion 83; arithmetic processing portion 84; light source device 85; Fiber 86; optical path adjusting unit 87; CCD camera or line sensor 88; electric board

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2F065 AA22 BB18 CC17 FF42 GG22 GG23 JJ02 JJ03 JJ25 JJ26 LL02 QQ03 QQ06 QQ26 QQ42 RR06 RR09 5F046 AA18 DA02 DA14

Claims (36)

[Claims] 1. An exposure condition setting device used for setting exposure conditions in a photolithography process, comprising: exposing a plurality of positions on a substrate in a predetermined pattern with different exposure amounts and focus values; An exposure condition determining apparatus, comprising: means for converting a state of a pattern into optical information and determining an optimal combination of an exposure amount and a focus value from the optical information. 2. Using a mask on which a predetermined pattern is formed, a plurality of positions on a substrate are exposed with different exposure amounts and focus values using the predetermined pattern, and thereafter, exposure conditions are determined using a developed substrate. A light irradiating unit for irradiating a predetermined range of the development pattern formed on the substrate with light of a predetermined intensity, and detecting light information of a predetermined region in the predetermined range. An exposure condition setting device, comprising: a detection unit; and a calculation processing unit that searches a portion exposed by the optimum exposure amount and the focus value from the optical information to determine an optimum exposure condition. 3. The detection unit includes: a CCD camera or a line sensor; and signal conversion means for converting an image signal of the predetermined area, which is captured by the CCD camera or the line sensor, into optical information. The exposure condition setting device according to claim 2, wherein 4. The light irradiating unit includes: a narrow-band wavelength light source; and an optical fiber that transmits light from the narrow-band wavelength light source to the substrate. 3. The exposure condition setting device according to item 3. 5. The light irradiation unit includes: a light source having a plurality of narrow-band wavelength light sources having different wavelength regions; and an optical fiber transmitting light from the light source toward the substrate. 4. The exposure condition setting according to claim 2, wherein an appropriate one narrow-band wavelength light source is selected and used from the plurality of narrow-band wavelength light sources according to the formed predetermined pattern. apparatus. 6. The predetermined pattern formed on the mask is a pattern in which a ratio between a line width and a gap width is changed and a total width of the line width and the gap width is constant. The exposure condition setting device according to any one of claims 2 to 5, wherein 7. The light information according to claim 1, wherein a reflected light intensity obtained by irradiating the development pattern with light having a predetermined intensity is used as the optical information.
Exposure condition setting device described in the paragraph. 8. A method for determining exposure conditions in a photolithography step, comprising: a first step of exposing a plurality of positions on a substrate in a predetermined pattern with different exposure amounts and focus values; and forming the substrate by developing the substrate. An exposure condition determining method, comprising: a second step of converting a state of a development pattern into optical information; and a third step of determining an optimal combination of an exposure amount and a focus value from the optical information. 9. A method for determining exposure conditions in a photolithography step, comprising: exposing a plurality of positions on a substrate with different exposure amounts and focus values by using a mask having a predetermined pattern formed thereon. A second step of developing the substrate to form a development pattern; a third step of irradiating a predetermined range of the development pattern with light of a constant intensity to obtain optical information on reflected light thereof; By comparing the light information with information prepared by visual observation and reference data prepared in advance including the light information, an optimum exposure amount and an optimum focus value are determined from a combination of the exposure amount and the focus value in the first step. An exposure condition setting method, comprising: four steps: 10. The exposure condition setting method according to claim 8, wherein the reflected light intensity when the development pattern is irradiated with light having a predetermined intensity is used as the optical information. 11. A method for setting exposure conditions in a photolithography step, comprising: using a mask on which a predetermined pattern is formed, exposing a plurality of different positions on a substrate with different exposure amounts and focus values using the predetermined pattern. A second preparation step of developing the substrate to form a reference development pattern; a third preparation step of obtaining the shape information of the reference development pattern by SEM observation of the reference development pattern; A fourth preparation step of irradiating a predetermined range of light with a constant intensity to obtain light information on the reflected light; and creating reference data in which the shape information is associated with the light information obtained in the fourth preparation step. Forming a predetermined development pattern on the substrate according to steps similar to the first preparation step and the second preparation step; A first step, a second step of irradiating a predetermined range of light of the development pattern with light of a constant intensity to obtain light information on reflected light thereof, and a first step of collating the light information with the reference data. And a third step of determining an optimal exposure amount and an optimal focus value from a combination of the exposure amount and the focus value in the main step having the following. 12. The exposure condition setting method according to claim 11, wherein, as the optical information, a reflected light intensity when the development pattern is irradiated with light having a predetermined intensity is used. 13. The predetermined pattern has a plurality of regions having different width ratios within a certain width between a linear and / or columnar and / or hole-shaped transmission portion and a light-shielding portion. Are the upper and lower limits of the width ratio of the transparent portion in the predetermined pattern corresponding to the exposure region where the resolution of the exposed portion based on the transparent portion and the non-exposed portion based on the light-shielded portion is determined by the SEM observation. The combination of values is recorded as a set of width ratios for each exposure condition. In the fourth preparing step, the reflected light intensity of the exposed area where the resolution of the exposed part and the non-exposed part is determined to be impossible The upper and lower limit values are recorded for each exposure condition. In the fifth preparation step, the exposure area having the reflected light intensity in the range between the upper and lower limit values of the reflected light intensity for each exposure condition is the one set of width ratios. 13. The exposure condition setting method according to claim 12, wherein the upper and lower limit values of the reflected light intensity and the upper and lower limit values of the set of width ratios are combined so as to coincide with an exposure region that provides an upper and lower limit value of the ratio. Method. 14. The exposure condition setting method according to claim 13, wherein the width ratio of the light-shielding portion is used instead of the width ratio of the transmission portion as the one set of width ratio. 15. In the third preparation step, an optimum exposure condition based on SEM observation is determined. In the fourth preparation step, a reflected light of an exposure region exposed under the optimum exposure condition determined in the third preparation step. In the fifth preparation step, a set of width ratios under optimal exposure conditions is determined from the value of the reflected light intensity obtained in the fourth preparation step, and in the second step, the third ratio is determined. In the third step, the reflected light intensity is measured with respect to an exposure region exposed under the same exposure condition as the optimum exposure condition determined in the preparation step and several kinds of exposure conditions close to the optimum exposure condition. A set of width ratios is obtained for each exposure condition from the value of the reflected light intensity measured in step 1, and a set of width ratios equal to or close to the set of width ratios under the optimal exposure condition is obtained. The conditions Until a set of width ratios indicating the optimal exposure condition is obtained as the constant exposure condition, the measurement of the reflected light intensity and the measured reflected light intensity of the exposed area exposed under the exposure condition close to the provisional exposure condition are performed. The exposure condition setting method according to claim 13, wherein the exposure condition is narrowed down by repeatedly determining a set of width ratios based on the values and updating the provisional exposure condition. 16. In the fourth preparation step and the second step, reflected light intensity of an exposure area corresponding to each width ratio is measured for each exposure condition, and in the third step, the reflected light intensity is measured in the second step. By comparing the obtained reflected light intensity with the upper and lower limits of the reflected light intensity obtained in the fourth preparation step, 1
Determining a pair of width ratios, and determining an exposure condition in which said one pair of width ratios coincides with or is close to a predetermined pair of width ratios indicating an optimum exposure amount and an optimum focus value as an optimum exposure condition. Claim 13 or Claim 1 characterized by the above-mentioned.
5. The exposure condition setting method according to item 4. 17. The method of measuring the intensity of reflected light in the second step is performed under an exposure condition of 1 or more and 30 or less combining an exposure amount and a focus value close to a focus value and an exposure amount under the previously determined optimum exposure condition. 17. The exposure condition setting method according to claim 16, wherein the method is performed for each of the developed patterns. 18. An exposure region in which it is determined that resolution of an exposed part and a non-exposed part obtained by the fourth preparation step is possible under the optimum exposure condition determined by the result of the SEM observation in the third preparation step. The upper and lower limits of the reflected light intensity are set as alarm values, under the optimal exposure conditions determined in the third step,
14. An alarm is issued when the range of the reflected light intensity of the exposure area determined to be capable of resolving the exposed part and the non-exposed part deviates from the alarm value range. 18. The exposure condition setting method according to any one of items 17 to 17. 19. The exposure condition setting method according to claim 9, wherein a narrow-band wavelength light source is used as a light source for irradiating the development pattern. 20. A light source for irradiating the development pattern with a plurality of narrow-band wavelength light sources having different wavelength ranges,
The exposure according to any one of claims 9 to 18, wherein an appropriate one narrow-band wavelength light source is selected from the plurality of narrow-band wavelength light sources according to the predetermined pattern and used. Condition setting method. 21. A processing apparatus having a development processing unit for performing development processing of an exposed substrate, the method comprising exposing a plurality of different positions on the substrate in a predetermined pattern with different exposure amounts and focus values, A processing apparatus comprising: an exposure condition setting device that converts a state of a developed pattern formed by development in the unit into optical information and determines an optimal exposure amount and a focus value from the optical information. 22. A processing apparatus having a developing section for performing a developing process on an exposed substrate, wherein a plurality of different positions of the substrate are different in the predetermined pattern by using a mask on which the predetermined pattern is formed. An exposure condition setting device that performs exposure condition setting using a substrate that has been exposed at an exposure amount and a focus value and then developed in the development processing unit, the exposure condition setting device includes a developing unit formed on the substrate. A light irradiating unit that irradiates a predetermined range of the pattern with light having a predetermined intensity; a detection unit that detects light information of a predetermined region in the predetermined range; and an exposure using an optimum exposure amount and a focus value from the light information. A processing unit for retrieving the selected location and determining an optimal exposure condition. 23. The detection unit, comprising: a CCD camera or a line sensor; and signal conversion means for converting an image signal of the predetermined area captured by the CCD camera or the line sensor into optical information. 23. The processing apparatus according to claim 22, wherein 24. The light irradiation unit according to claim 22, wherein the light irradiating unit includes: a narrow-band wavelength light source; and an optical fiber that transmits light from the narrow-band wavelength light source to the substrate. 23
A processing device according to claim 1. 25. The light irradiation unit, comprising: a light source having a plurality of narrow-band wavelength light sources having different wavelength regions; and an optical fiber transmitting light from the light source toward the substrate. 24. The processing apparatus according to claim 22, wherein one appropriate narrow-band wavelength light source is selected from the plurality of narrow-band wavelength light sources and used. 26. A resist coating section for forming a resist film on a substrate, an exposure apparatus for performing exposure processing on the substrate on which the resist film is formed, and a developing processing for the substrate exposed by using the exposure apparatus. A development processing unit to be performed, and a plurality of positions on the substrate are exposed with different exposure amounts and focus values in a predetermined pattern using the exposure apparatus, and the state of the development pattern formed by development in the development processing unit is optical information. And an exposure condition setting device that determines an optimal exposure amount and a focus value from the optical information and feeds back the optimal exposure amount and the optimal focus value to the exposure device. apparatus. 27. A resist coating processing section for forming a resist film on a substrate; a developing processing section for developing the exposed substrate; and a resist pattern formed in a predetermined pattern in the resist coating processing section. A plurality of different positions on the substrate are exposed with different exposure amounts and focus values, and thereafter, the state of a developed pattern formed by development processing in the development processing unit is converted into optical information, and optimal exposure is performed from the optical information. An exposure condition determining device for determining an amount and a focus value. 28. The exposure condition setting device, comprising: a light irradiator configured to irradiate a predetermined range of a development pattern formed on the substrate with light having a predetermined intensity; A detection unit that detects light information of a predetermined area; a calculation processing unit that determines an optimum exposure condition by searching a position exposed by an optimum exposure amount and a focus value from the light information obtained by the detection unit; The processing apparatus according to claim 26, further comprising: a signal transmission unit configured to transmit exposure conditions to the exposure apparatus. 29. The exposure condition setting device, comprising: a light irradiator configured to irradiate a predetermined range of a development pattern formed on the substrate with light having a predetermined intensity; A detection unit that detects light information in a predetermined area; and a calculation processing unit that determines an optimum exposure condition by searching for a portion exposed by an optimum exposure amount and a focus value from the light information obtained by the detection unit. The processing apparatus according to claim 27, wherein: 30. The detection unit, comprising: a CCD camera or a line sensor; and signal conversion means for converting an image signal of the predetermined area captured by the CCD camera or the line sensor into optical information. Claim 28 or Claim 29
A processing device according to claim 1. 31. The light irradiation unit according to claim 28, wherein the light irradiator includes: a narrow-band wavelength light source; and an optical fiber that transmits light from the narrow-band wavelength light source to the substrate. 30. The processing apparatus according to any one of 30. 32. The light irradiator, comprising: a light source having a plurality of narrow-band wavelength light sources having different wavelength ranges; and an optical fiber transmitting light from the light source toward the substrate. 31. The processing apparatus according to claim 28, wherein an appropriate one narrow-band wavelength light source is selected from the plurality of narrow-band wavelength light sources and used. 33. The apparatus according to claim 26, wherein the resist coating section, the developing section, and the exposure condition setting device are disposed inside one box. A processing device according to the item. 34. A resist coating section for forming a resist film on the substrate; a developing section for developing the exposed substrate; and a resist pattern formed in a predetermined pattern in the resist coating section. A plurality of different positions on the substrate are exposed at different exposure amounts and focus values, and thereafter, an optical information detection device that detects a state of a development pattern formed on the substrate by performing development processing in the development processing unit as optical information; A processing condition in the resist coating processing unit and / or the developing processing unit is determined from optical information detected by the optical information detecting device, and the determined processing condition is transmitted to the resist coating processing unit and / or the developing processing unit. And a coating / developing control unit for feeding back. 35. The light information detecting device, comprising: a light irradiator configured to irradiate a predetermined range of the development pattern formed on the substrate with light having a predetermined intensity; 35. The processing apparatus according to claim 34, further comprising: a detection unit configured to detect optical information in a predetermined area; and a signal transmission unit configured to transmit optical information obtained by the detection unit to the coating / developing control unit. . 36. The light information according to claim 21, wherein a reflected light intensity obtained by irradiating the development pattern with light having a predetermined intensity is used as the optical information. Processing equipment.