JP2002081874A - Plate type heat pipe and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an easy-to-manufacture plate type heat pipe exhibiting excellent heat dissipation performance which can be formed easily as a thin film and on which an electronic circuit can be integrated. SOLUTION: A thin tube 15 is formed in a desired pattern by sticking an Si substrate 11 having a groove 13 of desired pattern formed by anisotropic etching and another substrate and heat transporting fluid 21 is encapsulated in the thin tube 15.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plate-type heat pipe for effectively diffusing heat from a heating element, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, with respect to semiconductor elements mounted on various devices such as computers, high-density circuits have been increasingly developed due to improvements in process technology. for that reason,
Heat generation from semiconductor elements also tends to be larger, and cooling thereof has become an important technical issue. As a method of cooling the heat generating element, for example, a method of disposing a radiating fin close to the heat generating element, a method of attaching a fan to an apparatus to perform air cooling, and a method of providing a heat radiating mechanism called a heat pipe are known. .

[0003] A heat pipe uses a hermetically sealed pipe (which may have a circular or other cross-sectional shape) in which a heat-transporting fluid is sealed, and heats (that is, conducts heat) between a high-temperature section and a low-temperature section. To). The fluid warmed in the high temperature part evaporates and moves rapidly in the pipe from the high temperature part to the low temperature part, and condenses again in the low temperature part.
The condensed fluid is wicked using gravity and capillary action.
By transmitting the (heart material), the inside of the pipe is guided to the high temperature part. By such an evaporation / condensation cycle, heat is effectively transferred from the high-temperature portion to the low-temperature portion to release the heat. In this case, in the bottom heat mode (the high temperature part is below the low temperature part), the effect of the evaporation / condensation cycle is exhibited, but in the top heat mode (the high temperature part is above the low temperature part), the condensed fluid However, there is a problem that the evaporation / condensation cycle cannot be used due to the inability to move effectively, and the performance deteriorates in the horizontal heat mode (the high temperature part and the low temperature part are at the same level).

Further, a plate-type heat pipe has been put to practical use so that heat can be effectively dissipated even in a case where there is not enough space for mounting a radiation fin or a fan as in a notebook PC.

FIG. 11A is a sectional view showing an example of the structure, and FIG. 11B is a plan view thereof. In this figure, 1
001 is a meandering thin tube heat pipe,
The filler 1007 and the spacer 1009 (1-4) are hermetically sandwiched and fixed by 3 and 1005. Thin tube heat pipe 1001
Has a loop as shown in FIG. 11 (b), in which a heat transport fluid is sealed. The fluid oscillates in the axial direction (the direction in which the pipe extends) or oscillates in an unspecified direction (the direction can vary depending on the operating conditions (posture, temperature, etc. of the thin tube heat pipe) even with the same structure) while repeating evaporation and condensation. To transport heat. Here, the inner diameter of the thin tube heat pipe 1001 can be moved in the loop while being closed by the surface tension of the heat transport fluid (indicating a state in which the heat transport fluid is tightly closed by the inner wall of the pipe 1001 without any gap). It is thin enough. If the heat transport fluid is blocked as described above, the fluid can be pushed and moved by the vapor pressure, so that it can be used in a top heat mode or a horizontal heat mode where gravity or the like cannot be used. Furthermore, by providing a non-return valve in the loop, the heat transfer fluid is circulated in one direction and heat is transported in one direction, or the heat pipe shaft of the fluid is formed as a non-loop structure without connecting both ends of the heat pipe. A type in which heat is transported by directional vibration has also been proposed.

Further, as disclosed in Japanese Patent Application Laid-Open No. 7-63487, there has been proposed a type in which a heat pipe is formed by laminating metal plates having narrow grooves.

[0007]

However, the conventional plate-type heat pipe has the following problems.

In order to improve the performance of the heat pipe, it is necessary to increase the density of the pipe, that is, the number of turns. However, conventionally, a thin tube is generally formed of a metal having an outer diameter of several mm, and the upper limit of the number of turns is determined from the limit of the radius of curvature. In order to further increase the number of turns, the wall of the pipe needs to have a multilayer structure. However, in this case, the thickness of the wall of the heat pipe increases, which is not suitable for downsizing. Further, since the thickness of the wall of the heat pipe is limited by the diameter of the thin tube, there is a limit to further thinning the heat pipe. Further, it is not easy to arrange and fix the meandering thin tube at a predetermined position in the flat plate, and there is a problem that productivity is poor.

[0009] In the configuration of Japanese Patent Application Laid-Open No. 7-63487,
Since it is limited to a metal plate and an electronic circuit cannot be formed here, it is not suitable for integration of electronic circuits.

In view of these problems, an object of the present invention is to
Excellent heat dissipation, easy thinning, easy integration of electronic circuits, easy production of plate heat pipe, and a method of producing such a plate heat pipe that can be easily produced. To provide.

[0011]

A plate-type heat pipe according to the present invention for achieving the above object has a desired pattern by bonding an Si substrate having a groove of a desired pattern to another substrate. Is formed. A heat transport fluid may be sealed in the capillary. In particular, a design that allows air to pass through the narrow tube may be applied without enclosing the heat transport fluid. The groove can be formed by anisotropic etching or the like, and further, its cross-sectional shape is V-shaped or the like. There is no need to make a pipe with metal or the like and bend it, and by using a photolitho process or the like on the Si substrate, a high-density thin tube with a desired pattern can be easily formed. In addition, the heat transport fluid can be moved along the capillary by transmitting the groove portion by capillary action.

The following is a description of a specific example.
This will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a plate-type heat pipe according to the present invention, FIG. 2 (a) is a perspective view of an Si substrate, and FIG. 2 (b) is a top view of the plate-type heat pipe.
A thin tube 15 is formed by laminating two Si substrates 11-1 and 11-2 having surfaces on which V-shaped grooves 13-1 and 13-2 are formed at opposing positions. The heat transport fluid 21 is inserted into the insertion port 17,
From 19, a predetermined amount is introduced into the thin tube 15, and the insertion port is sealed with resin.

A thin tube 15 is provided so as to alternately intersect a high-temperature portion 25 provided with a heating element (not shown) such as an electronic circuit and a low-temperature portion 27 provided with a radiator plate (not shown).
The inside is sealed with a heat transport fluid 21 and a vapor bubble 23 in which it is vaporized. Fluid 21 repeats evaporation and condensation,
Since heat can be transported by vibrating in the axial direction of the thin tube 15 or circulating in an unspecified direction, heat from the heating element can be efficiently dissipated. The inner diameter of the thin tube 15 is the heat transport fluid.
21 is sufficiently thin so that it can move inside the capillary tube 15 while being closed by its surface tension, and the fluid can be moved by transmitting the acute angle portion of the V-groove by capillary action. Therefore, it can be used in the top heat mode or the horizontal heat mode.

Processing of the Si substrate can be performed by a general photolithography or wet etching process.
The productivity is high and the size and pattern of the capillary can be controlled freely. In addition, since the Si substrate can be processed to a thickness of about 100 μm to several hundreds of μm, a plate-type heat pipe having a thickness of 1 mm or less can be formed even when stacked.

Based on the above basic configuration, more specifically, the following forms can be adopted. The another substrate is also a Si substrate, and these Si substrates can be joined by heat compression. Thus, a thin tube can be formed by a simple process.
In this case, the grooves of the desired pattern are also formed on the another Si substrate, and these grooves are combined and the Si substrates are joined to each other by thermocompression bonding (the example in FIG. 1 is the same). No groove is formed in the Si substrate, and these Si substrates are joined by heat compression. Grooves of another predetermined pattern may also be formed on the another Si substrate, and the Si substrates may be joined to each other by heating and pressing or the like by shifting these grooves.

The another substrate is a substrate made of a material capable of anodic bonding with Si, and the Si substrate having the groove formed thereon and another substrate may be bonded by an anodic bonding method. This also allows a thin tube to be formed by a simple process.

The another substrate is a substrate made of a material capable of forming a eutectic alloy with Si, or the surface of another substrate is
The substrate is covered with a material capable of forming a eutectic alloy with Si, and the Si substrate in which the groove is formed and another substrate can be joined by forming a eutectic alloy at an interface. Even in this case, a thin tube can be formed by a simple process.

The outermost surfaces of the Si substrate on which the groove is formed and another substrate are made of metal, and the metals can be bonded in a solid phase. Even in this case, a thin tube can be formed by a simple process.

The Si substrate on which the groove is formed and another substrate may be joined by an adhesive. Even in this case, a thin tube can be formed by a simple process.

By stacking a plurality of layers of the Si substrate having the grooves formed thereon, two or more stages of thin tubes can be formed (see examples in FIGS. 8 and 9). As a result, a plate-type heat pipe with further improved heat dissipation can be realized. Further, a thin tube having a multilayer structure can be formed by a simple process.

By forming grooves on both sides of the Si substrate, two or more stages of thin tubes may be formed (see the example of FIG. 7). Even in this case, a plate-type heat pipe with further improved heat dissipation can be realized. Further, a thin tube having a multilayer structure can be formed by a simple process.

An electronic circuit may be integrated on the Si substrate. Thereby, a plate-type heat pipe provided with an electronic circuit can be realized. In addition, heat dissipation of the electronic circuit can be improved.

The capillary can be a closed loop capillary or a non-loop capillary with open ends. Thus,
The heat transport fluid can be moved effectively.

Further, a method of manufacturing a plate-type heat pipe according to the present invention for achieving the above object includes a step of forming a groove of a predetermined pattern on an Si substrate by anisotropic etching or the like. And a step of forming a thin tube having a desired pattern by bonding the substrate to a substrate.
Further, the method may include a step of enclosing a heat transport fluid in the thin tube.

Thus, it is possible to provide a manufacturing method capable of easily manufacturing the plate-type heat pipe as described above.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described below with reference to the embodiments shown in the drawings.

(First Embodiment) A first embodiment according to the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a plate-type heat pipe according to a first embodiment, FIG. 2 (a) is a perspective view of an Si substrate 11, and FIG. 2 (b) is a partially broken view of the plate-type heat pipe of the present embodiment. FIG.

The manufacturing method of this embodiment will be described. An etching mask (not shown) is formed on the Si substrate 11, and a V-shaped groove 13 having a predetermined pattern is formed by anisotropic etching as shown in FIG. 2 (a). At this time, the etching mask is patterned in a direction parallel to the <011> direction and the <0-11> direction using, for example, the Si substrate 11 having the (100) plane as a surface. By using an aqueous solution of potassium hydroxide as an etching solution, the slope of the V-shaped groove 13 can be made a (111) plane. In this case, the angle of the bottom of the V groove 13 is 70.5 °.

The two sheets having the V-shaped grooves 13-1 and 13-2 thus formed are
The Si substrates 11-1 and 11-2 are bonded together. The bonding method is
This was performed by heating the two Si substrates 11-1 and 11-2 to about 1200 ° C. while applying pressure.

Then, the V-groove 13-
The inside of the thin tube 15 formed by 1 and 13-2 is decompressed, and the heat transport fluid 21 is introduced from the other side. Then, the insertion ports 17 and 19 are sealed with resin to form a plate-type heat pipe.

The heat transport fluid 21 is desirably a liquid having a boiling point near or below the temperature desired to be held by a heating element such as an electronic circuit. For example, alternative Freon (H
CFC123), acetone, methanol, water and the like can be used.

The thickness of the Si substrate 11 and the width and depth of the V-groove 13 may be appropriately set according to the intended use. For example, thickness 20
Using a 0 μm Si substrate 11, a V groove 13 having a width of 100 μm and a depth of 70 μm
Is formed at a pitch of 200 μm, a plate-type heat pipe having a thickness of 400 μm and five thin tubes 15 per mm can be manufactured. Thus, the plate-type heat pipe can be easily made thin.

The operation will be described. As shown in FIG. 2 (a), a high temperature section 25 in which a heating element (not shown) such as an electronic circuit is provided.
A thin tube 15 is provided so as to alternately intersect with a low-temperature portion 27 provided with a heat radiating plate (not shown), and the inside of the thin tube 15 is sealed with a heat transport fluid 21 and a vapor bubble 23 in which the heat transport fluid 21 is vaporized. . The fluid 21 can vibrate in the axial direction of the thin tube 15 or circulate in an unspecified direction and transport heat while repeating evaporation and condensation, so that heat from the heating element can be efficiently dissipated. . The diameter of the thin tube 15 is
The heat transfer fluid 21 is sufficiently thin so as to be able to move in the loop while being closed by the surface tension of the heat transfer fluid 21. Further, the fluid 21 can be moved by transmitting the acute angle portion (bottom portion) of the V groove 13 by the capillary action. In any case, in any heat mode, the heat transport fluid 21 is effectively evaporated /
The condensation cycle can be repeated.
Therefore, it can be used in the top heat mode or the horizontal heat mode.

In this embodiment, an example is shown in which a loop type thin tube structure is provided. However, the present invention is not limited to this, and FIG.
As shown in (b), a non-loop type thin tube structure in which both ends near the insertion ports 17 and 19 of the thin tube 15 are not connected to form a closed loop may be used. In this case, the heat transport fluid 21 vibrates in the axial direction of the thin tube 15.

Further, as another method of bonding a Si substrate, either Si substrate 11 previously formed the Si0 ₂ film beforehand by thermal oxidation, pasting by heat and pressure and the Si0 ₂ film and the Si substrate 11 It may be a method. In this case, the heating temperature is 800 ℃
Degree is fine. As still another bonding method, bonding may be performed using an adhesive. In this case, the process becomes easier because there is no need to raise the temperature.

In this embodiment, the Si substrate 11 to be attached is
Although the V-groove 13 is formed in both of them, the V-groove may be formed on only one of the substrates. Alternatively, a groove may be provided in each of the two substrates, and these substrates may be bonded to each other so that at least a part of the groove does not overlap.

(Second Embodiment) A second embodiment of the present invention will be described with reference to FIG. FIG. 4 is a cross-sectional view of the plate-type heat pipe according to the present embodiment.

This embodiment differs from the first embodiment in that the anisotropic etching of the Si substrate is stopped halfway.
Trench-shaped grooves 113-1, 113-2 on Si substrates 111-1, 111-2
Are formed to form the thin tube 115. The manufacturing method and operation are the same as in the first embodiment.

In this embodiment, the trapezoidal shape makes it possible to make the Si substrate 111 thinner than in the first embodiment, and the force applied to this structure is dispersed ( Even if the thickness is the same (not concentrated on the groove), there is an advantage that it is strong and structurally difficult to break.

(Third Embodiment) A third embodiment according to the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view (before sticking) of the plate-type heat pipe according to the present embodiment.

The processing of the V-groove 13 on the Si substrate 11 is the same as in the first embodiment, and the description is omitted. On the other hand, the Si substrate 11
A metal film 203 capable of forming a eutectic alloy with Si is formed by vapor deposition on another substrate 201 to which is attached. The metal film 203 is made of Au,
Al and the like. After that, the Si substrate 11 and another substrate 201 are bonded by heat and pressure to form a thin tube 215.
For example, when Au is used as the metal film 203, the heating temperature may be about 400 ° C.

The other substrate 201 is not particularly limited, but
It is desirable that the material has good thermal conductivity. For example, Si,
A1N, sapphire substrate, etc. are suitable.

In this embodiment, since the heating temperature is lower than that in the first embodiment, the process is facilitated. Also,
As another bonding method, a method in which a metal film is formed on the Si substrate 11 side and the metal films are bonded to each other by pressing each other may be used. For example, if both metal films are made of Au, they can be bonded using solid-state bonding between Au. In order to make the metal film stronger, irregularities may be formed on both metal films, and the metal films may be bonded so that the irregularities mesh like a gear.

(Fourth Embodiment) A fourth embodiment according to the present invention will be described with reference to FIG. FIG. 6 is a cross-sectional view of the plate-type heat pipe according to the present embodiment.

Also in this embodiment, the processing of the V-groove 13 in the Si substrate 11 is the same as in the first embodiment, and the description is omitted. As another substrate 301 to which the Si substrate 11 is attached, a glass material capable of anodic bonding with Si is used. For example, Pyrex (registered trademark) glass such as Corning 7059 may be used.

As the bonding method, the Si substrate 11 side is connected to the anode and the other substrate 301 side is connected to the cathode, the two substrates 11 and 301 are held, heated to about 300 ° C., and a voltage of about 300 V is applied. To perform anodic bonding. As a result, a thin tube 315 can be formed in the V groove 13. In the present embodiment, compared to the first embodiment,
Since the treatment may be performed at a low temperature, the process is facilitated, and further thinning is possible.

(Fifth Embodiment) A fifth embodiment according to the present invention will be described with reference to FIG. FIG. 7 is a sectional view of a plate-type heat pipe according to the present embodiment.

V-grooves 413 and 417 are formed on both surfaces of the Si substrate 411. The processing method is the same as in the first embodiment. Further, the thin tubes 415 and 419 are formed by anodically bonding other substrates 421 and 423 that can be anodically bonded to Si to the Si substrate 411. The joining means is as described in the fourth embodiment,
The substrate 411 may be connected to the anode, and the other substrates 421 and 423 may be connected to the cathode.

In this embodiment, compared to the first embodiment, the thin tube 4
Since the densities of 15, 419 are improved, it is possible to improve the heat radiation efficiency. Further, as a method of attaching another substrate, a method as described in the first to third embodiments may be used.

(Sixth Embodiment) A sixth embodiment according to the present invention will be described with reference to FIG. FIG. 8 is a cross-sectional view of the plate-type heat pipe according to the present embodiment.

V grooves 513 and 523 are formed in Si substrates 511 and 521, respectively.
Are respectively formed. The processing method is the same as in the first embodiment. Further, thin tubes 515 and 525 are formed by sequentially anodically bonding another substrate 531 that can be anodically bonded to Si and Si substrates 511 and 521. The joining means is as described in the fourth embodiment.
The electrodes may be connected such that the substrates 511 and 521 are anodes and the other substrate 531 is a cathode.

In this embodiment, an opening 533 is provided at a predetermined position of another substrate 531, and the upper thin tube 525 and the lower thin tube 525 are provided.
The structure is connected to 515. Therefore, for example, a heat transport mode in which the upper stage is connected to a heat radiating plate (low-temperature portion) and the lower stage is connected to a heating element such as an electronic circuit (high-temperature portion) can be realized, so that versatility is expanded. Needless to say, since the density of the thin tubes is improved by adopting the multilayer structure as compared with the first embodiment, the heat radiation efficiency can be improved.

(Seventh Embodiment) A seventh embodiment according to the present invention will be described with reference to FIG. FIG. 9 is a sectional view of a plate-type heat pipe according to the present embodiment.

A V-groove 613-1 is formed in the Si substrate 611-1. The processing method is the same as in the first embodiment. Furthermore, Si
By anodically bonding another substrate 601-1 that can be anodically bonded to the silicon substrate 611-1, a thin tube 615-1 is formed. Further, another substrate 601-2, a Si substrate 611-2 having a V-shaped groove 612-2 formed thereon,
Another substrate 601-3 and the Si substrate 611-3 on which the V groove 613-3 is formed are sequentially anodically bonded to form a three-layer plate-type heat pipe. The bonding means is as described in the fourth embodiment, and the electrodes may be connected such that the Si substrate 611 side is the anode and another substrate 601 side is the cathode at the bonding interface.
In the present embodiment, by adopting a multilayer structure, the density of the thin tubes is improved as compared with the first embodiment, so that the heat radiation efficiency can be improved.

(Eighth Embodiment) An eighth embodiment according to the present invention will be described with reference to FIG. FIG. 10 is a perspective sectional view of the plate-type heat pipe according to the present embodiment.

The Si substrate 711 having the V-groove formed thereon is replaced with another substrate 713.
And a thin tube 715 is formed. The processing method is the same as in the first to fourth embodiments. Furthermore, the Si substrate 71
An electronic circuit 717 is integrated on the surface of 1. The fabrication of the electronic circuit 717 is a general process and is not special.

Regarding the order of forming the V-groove in the Si substrate 711 and manufacturing the electronic circuit, either one may be performed first if one process does not affect the other.

According to this embodiment, the heat from the electronic circuit 717 can be effectively dissipated through the thin tube 715. This is the case when the electronic circuit chip is thermally bonded to the heat pipe by some means (for example, a heat conductive adhesive (for example, a mixture of an adhesive and a powder such as alumina)).
It is needless to say that the heat radiation property is superior to that of the above.

[0059]

As described above, according to the present invention,
It is possible to provide a plate-type heat pipe which has excellent heat radiation properties, can be easily formed into a thin film, and can be easily manufactured, and can provide a manufacturing method capable of easily manufacturing such a plate-type heat pipe.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a plate-type heat pipe according to the present invention.

FIG. 2 is a diagram illustrating the structure and operation of the first embodiment.

FIG. 3 is a diagram illustrating a structure of a modification of the first embodiment.

FIG. 4 is a sectional view showing a plate-type heat pipe according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a third embodiment (before bonding) of a plate-type heat pipe according to the present invention.

FIG. 6 is a sectional view showing a plate-type heat pipe according to a fourth embodiment of the present invention.

FIG. 7 is a sectional view showing a fifth embodiment of the plate-type heat pipe according to the present invention.

FIG. 8 is a sectional view showing a plate-type heat pipe according to a sixth embodiment of the present invention.

FIG. 9 is a sectional view illustrating a plate-type heat pipe according to a seventh embodiment of the present invention.

FIG. 10 shows an eighth embodiment of the plate-type heat pipe according to the present invention.
It is sectional drawing which shows Example of (a).

FIG. 11 is a diagram showing a cross section and a top surface of a conventional example.

[Explanation of symbols]

 11,111,411,511,521,611,711 Si substrate 13,113,413,417,513,523,613 Groove 15,115,215,315,415,419,515,525,615,715 Capillary tube 17,19 Insertion port 21 Heat transport fluid 23 Steam bubble 25 High temperature section 27 Low temperature section 201,301,421,423,531,601,713 Substrate 533 Opening 203 Metal film 717 Electronic circuit

Claims (20)

[Claims] 1. A plate-type heat pipe wherein a thin tube having a desired pattern is formed by bonding an Si substrate having a predetermined pattern of grooves formed thereon and another substrate. 2. The plate-type heat pipe according to claim 1, wherein a heat transport fluid is sealed in said thin tube. 3. The plate-type heat pipe according to claim 1, wherein said groove is formed by anisotropic etching of said Si substrate. 4. The groove according to claim 1, wherein a cross section of said groove has a V-shape.
4. The plate-type heat pipe according to 2 or 3. 5. The groove according to claim 1, wherein a cross section of said groove has a trapezoidal shape.
Or the plate-type heat pipe according to 3. 6. The plate-type heat pipe according to claim 1, wherein said another substrate is a Si substrate, and said Si substrates are joined by heat compression. 7. The plate-type heat pipe according to claim 6, wherein grooves of the desired pattern are also formed in the another Si substrate, and the grooves are aligned so that the Si substrates are joined to each other by thermocompression bonding. . 8. The plate-type heat pipe according to claim 6, wherein no grooves are formed in said another Si substrate, and said Si substrates are joined by heat compression. 9. The semiconductor device according to claim 1, wherein said another substrate is a substrate made of a material capable of anodic bonding with Si, and said Si substrate and another substrate are bonded by an anodic bonding method. Plate type heat pipe. 10. The another substrate is a substrate made of a material capable of forming a eutectic alloy with Si, or the surface of another substrate is covered with a material capable of forming a eutectic alloy with Si. 6. The plate heat pipe according to claim 1, wherein the Si substrate and another substrate are joined by forming a eutectic alloy at an interface. 11. The plate-type heat pipe according to claim 1, wherein the outermost surfaces of said grooved Si substrate and another substrate are made of metal, and the metals are solid-phase bonded to each other. . 12. The plate-type heat pipe according to claim 1, wherein the Si substrate having the groove formed thereon and another substrate are joined by an adhesive. 13. The plate-type heat pipe according to claim 1, wherein a plurality of thin tubes are formed by laminating a plurality of layers of the Si substrate having the grooves. 14. The plate-type heat pipe according to claim 1, wherein two or more thin tubes are formed by forming grooves on both surfaces of said Si substrate. 15. The plate heat pipe according to claim 1, wherein an electronic circuit is integrated on the Si substrate. 16. A plate-type heat pipe according to claim 1, wherein said thin tube is a closed loop thin tube. 17. The plate-type heat pipe according to claim 1, wherein said thin tube comprises a non-loop type thin tube having both open ends. 18. A plate-type heat source comprising: a step of forming a groove of a predetermined pattern on a Si substrate; and a step of bonding the Si substrate to another substrate to form a thin tube of a desired pattern. How to make a pipe. 19. The method for manufacturing a plate-type heat pipe according to claim 18, further comprising a step of enclosing a heat transport fluid in said thin tube. 20. The method according to claim 18, wherein the groove is formed by anisotropic etching of the Si substrate.