JP2002076260A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, in which normal operation of a drive control circuit can be ensured by avoiding the effects of electrostatic field generated between conductive parts in a semiconductor device, when a voltage is applied to a prescribed circuit which is about to be switched. SOLUTION: The semiconductor device comprises a semiconductor element for switching a main current for a specific external circuit and a drive control circuit for driving the semiconductor element, where the drive control circuit is disposed at the outside of a region where an electrostatic field can be generated in the semiconductor device, when voltage is applied to the semiconductor element.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an integrated semiconductor device, and more particularly, to a semiconductor device suitable for use in a power conversion device such as an inverter device.

[0002]

2. Description of the Related Art Conventionally, integrated devices in which a plurality of electronic elements are incorporated in one housing have been frequently used. Such an integrated device incorporates, for example, a semiconductor switching element such as an insulated gate bipolar mode transistor (IGBT) element and a drive control circuit for driving the switching element, and is mainly used for a power converter such as an inverter apparatus. Switching semiconductor devices are known.

FIG. 5 schematically shows the internal structure of a conventional switching semiconductor device. This semiconductor device 6
0, the switching elements 62A and 62, which are semiconductor chips, are mounted on the base plate 63 in the housing 61 forming the outer shape of the main body.
B is arranged via the insulating plates 64A and 64B, and one ends of the electrode terminals 65A and 65B are joined. The electrode terminals 65A and 65B extend upward while being bent, and the other end is exposed from the upper surface of the housing 61 and is used as an external terminal.

In the semiconductor device 60, a printed circuit board 66 and a switching element drive control IC mounted on the printed circuit board 66 are provided above the insulating plate 64A.
A drive control circuit 68 including various elements including C, a chip transistor, a chip diode, and the like (collectively denoted by reference numeral 67) is provided. The various elements 67 in the drive control circuit 68 are arranged between the horizontal portion 65a of the electrode terminal 65A and the printed board 66.

As described above, in an integrated device including the switching semiconductor device 60, generally, in order to reduce the size of the device body, the semiconductor element (here, the switching element) and its control circuit are built in the same housing. It has a structure, and various elements and conductive portions of electrode terminals are arranged in the housing in close proximity. In such a structure, an electrostatic field may be generated in a region between the conductive portions as a voltage is applied to the DC main circuit to be switched. In the case of the switching semiconductor device 60, an electrostatic field is generated in a region 80 (indicated by mesh-like hatching) between the horizontal portion of the electrode terminal 65A and the wiring pattern on the printed board 66. Since the strength of this electrostatic field is inversely proportional to the distance between the conductive parts and proportional to the applied voltage,
It is known that the size of a semiconductor device increases as the size and voltage of the semiconductor device increase.

[0006]

By the way, the active elements such as the control IC, the chip transistor and the chip diode in the drive control circuit 68 are usually sealed with resin for the purpose of protection from the external environment. As the sealant, for example, a material to which a component such as a Br compound and an Sb compound which makes the resin flame-retardant is added is used. In the resin,
Only a very small amount of the Br compound is ionized. The bromine ions are evenly distributed in the resin, and maintain a neutralized state as a whole. However, as described above, when a voltage is applied to the DC main circuit and an electrostatic field is generated in a region between conductive portions in the semiconductor device, as shown in the case of the specific active element 70 in FIG. The ions show a polarization phenomenon in the resin 69. The electrostatic field is applied in the direction of the arrow. As a result, the ions in the resin 69 act on each of the active elements included in the drive control circuit 68 as if they were gates, causing the drive control circuit 68 to malfunction. As a result, there is a concern that the operation of the switching elements 62A and 62B that are driven by the drive control circuit 68 may be abnormal.

SUMMARY OF THE INVENTION The present invention has been made in view of the above technical problem, and is not affected by an electrostatic field generated between conductive portions in a device due to application of a voltage to a predetermined circuit to be switched. It is another object of the present invention to provide a semiconductor device capable of ensuring a normal operation of a drive control circuit.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor device including a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. The circuit is arranged outside a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element.

According to a second aspect of the present invention, a drive control circuit is provided in a semiconductor device including a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. Among the elements, an active element that is resin-sealed for protection from an external environment is disposed outside a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. It is characterized by the following.

Further, a third invention of the present application constitutes a drive control circuit in a semiconductor device including a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. Among the elements, only a control IC capable of controlling a main operation of a circuit is arranged outside a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. It is what it was.

Still further, according to a fourth aspect of the present invention, there is provided a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element, wherein the drive control circuit is The semiconductor device is characterized in that a region where an electrostatic field can be generated in the semiconductor device with the application of a voltage to the semiconductor element is shielded by a shielding member.

Further, according to a fifth aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element. Among the constituent elements, an active element sealed with resin for protection from an external environment is shielded by a shielding member from a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. It is characterized by having been done.

Further, according to a sixth aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element. Of the constituent elements, only a control IC capable of controlling the main operation of the circuit is shielded by a shielding member from a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. It is characterized by the following.

Further, according to a seventh aspect of the present invention, there is provided a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element, wherein the drive control circuit Among the constituent elements, a resin whose characteristic fluctuation resistance to an external electrostatic field is equal to or more than a predetermined value is used as a sealant of an active element which is sealed with a resin for protection from an external environment. is there.

Still further, according to an eighth aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element. Among the constituent elements, the active element sealed with resin for protection from the external environment is characterized in that an element having a characteristic fluctuation resistance to a polarization phenomenon of ions in the resin of not less than a predetermined value is used. .

[0016]

Embodiments of the present invention will be described below with reference to the accompanying drawings. Embodiment 1 FIG. FIG. 1 is a vertical sectional explanatory view showing the internal structure of the semiconductor device according to the first embodiment of the present invention. The semiconductor device 10 can be used as a switching device in a power conversion device such as an inverter device, and includes a semiconductor switching element 2A, which is a semiconductor chip.
2B, a drive control circuit 8 for driving the switching elements 2A and 2B is incorporated in the same housing 1.

In the housing 1, the switching elements 2A, 2
B is the insulating plate 4 on the base plate 3 forming the bottom of the main body.
A and 4B are provided via copper wiring patterns 11A and 11B. The switching elements 2A and 2B are insulated gate bipolar mode transistors (IGB
T) element is used. Further, copper wiring patterns 12A, 12B are provided on insulating plates 4A, 4B on base plate 3.
One end of each of the electrode terminals 5A and 5B is joined via the. These electrode terminals 5A and 5B extend upward while being bent, and the other end is exposed from the upper surface of the housing 1 and functions as an external terminal.

Further, in the first embodiment, the region between the conductive portions of the electrodes and elements, that is, the region where a static electric field can be generated (here, the lower region 12 of the horizontal portion 5a of the electrode terminal 5A) is located. A printed circuit board 6 and a plurality of control ICs mounted on the printed circuit board 6, various elements such as a chip transistor and a chip diode (these elements are collectively denoted by reference numeral 7).
) Is provided.
A wiring pattern (not shown) for connecting various elements is formed on the printed board 6 along the plane direction. The printed circuit board 6 is connected to the wiring patterns 11A and 12B on the insulating plates 4A and 4B via aluminum wires 13 and 14, respectively.

Further, the switching element 2A and the wiring pattern 12A on the insulating plate 4A are made of aluminum wires 9A.
And the switching element 2B and the wiring pattern 12B on the insulating plate 4B are connected via an aluminum wire 9B. That is, in this semiconductor device 10, the electrode terminal 5A → the insulating plate 4
Wiring pattern 12A on A → Aluminum wire electrode 9A → Switching element 4A → Wiring pattern 11A on insulating plate 4A → Aluminum wire 13 → Wiring pattern on printed board 6 → Various elements 7 → Wiring pattern on printed board 6 → Aluminum A current path is formed from the wire 14 → the wiring pattern 12B on the insulating plate 4B → the electrode terminal 5B.

As a voltage is applied to the DC main circuit to be switched using the semiconductor device 10, an electrostatic field may be generated in the lower region 15 of the horizontal portion 5a of the electrode terminal 5A. In the semiconductor device 10, since the drive control circuit 8 is disposed outside the region 15 where an electrostatic field can be generated, as described with reference to FIGS. There is no fear that the active element is affected by the electrostatic field and the ions in the resin that seals the active element are polarized. As a result, the switching elements 2A,
Malfunction of the drive control circuit 8 that drives the 2B can be suppressed, and normal operation of the switching elements 2A and 2B can be ensured.

Hereinafter, another embodiment of the present invention will be described. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and further description is omitted. Embodiment 2 FIG. FIG. 2 is a longitudinal sectional explanatory view showing the internal structure of the semiconductor device according to the second embodiment of the present invention. The semiconductor device 20 has substantially the same configuration as the semiconductor device according to the first embodiment. In the second embodiment, the drive control circuit 28 is
Among the various elements mounted thereon, active elements to be resin-sealed such as a control IC, a chip transistor, and a chip diode (these elements are collectively denoted by reference numeral 27) are in a region where an electrostatic field can be generated (here, It is arranged outside the area 12) between the printed board 26 and the horizontal portion 5a of the electrode terminal 5A.

Thus, in the semiconductor device 20, there is no fear that the various active elements constituting the drive control circuit 8 are affected by the electrostatic field and the ions in the resin for sealing the active elements are polarized. . As a result, switching element 2
A malfunction of the drive control circuit 28 that drives the A and 2B can be suppressed, and the normal operation of the switching elements 2A and 2B can be ensured.

In the second embodiment, of the elements constituting the drive control circuit 28, the resin-sealed active elements such as a control IC, a chip transistor, and a chip diode are used in an area where an electrostatic field can be generated. It is located outside,
The present invention is not limited to this. For example, the drive control circuit 2
8 has the same effect as in the second embodiment even if only the control IC capable of controlling the main operation of the circuit is arranged outside the region where an electrostatic field can be generated. Can be.

Embodiment 3 FIG. FIG. 3 is an explanatory longitudinal sectional view showing the internal structure of the semiconductor device according to Embodiment 3 of the present invention. In this semiconductor device 30, the electrode terminal 5A
A printed circuit board 36 and various elements including a plurality of control ICs, chip transistors, chip diodes, and the like mounted on the printed circuit board 36 (these elements are collectively denoted by reference numeral 37) are disposed below the horizontal portion 5a. Is provided. Further, the third embodiment
In the figure, a shielding plate 33 substantially corresponding to the size of the driving control circuit 38 is horizontally mounted on the printed circuit board 36. The shielding plate 33 is made of a material (for example, metal) capable of shielding the drive control circuit 38 from an electrostatic field that may be generated below the horizontal portion 5a of the electrode terminal 5A. Thus, in the semiconductor device 30, the drive control circuit 38 is maintained outside the region 35 where an electrostatic field can be generated.

Therefore, in the semiconductor device 30, there is no fear that the various active elements constituting the drive control circuit 38 are affected by the electrostatic field and the ions in the resin sealing the active elements are polarized. As a result, malfunction of the drive control circuit 38 that drives the switching elements 2A and 2B can be suppressed, and normal operation of the switching elements 2A and 2B can be ensured.

Embodiment 4 FIG. 4 is a vertical sectional explanatory view showing the internal structure of the semiconductor device according to the fourth embodiment of the present invention. In this semiconductor device 40, the electrode terminal 5A
A drive control circuit 48 including a printed board 46 and various elements mounted on the printed board 46 is disposed below the horizontal portion 5a. Furthermore, the fourth embodiment
Of the various elements mounted on the printed circuit board 46, a plurality of control ICs, chip transistors, and active elements such as chip diodes (these elements are collectively represented by the numeral 47) are almost corresponding to the size thereof. The shielding plate 43 is attached. This shielding plate 4
Reference numeral 3 is made of a material (for example, metal) capable of shielding the drive control circuit 48 from an electrostatic field that can be generated below the horizontal portion 5a of the electrode terminal 5A, like the shielding plate 33 in the third embodiment. Things. Thus, in the semiconductor device 40, the active elements included in the drive control circuit 48 can maintain the normal operation without being affected by the region 45 where an electrostatic field can occur.

Therefore, in the semiconductor device 40, there is no fear that the various active elements constituting the drive control circuit 48 are affected by the electrostatic field and the ions in the resin for sealing the active element 47 are polarized. . As a result, malfunction of the drive control circuit 48 that drives the switching elements 2A and 2B can be suppressed, and normal operation of the switching elements 2A and 2B can be ensured.

In the fourth embodiment, the case where all the active elements 47 included in the drive control circuit 48 are shielded from the electrostatic field has been described. However, the present invention is not limited to this. For example, only the control IC may be shielded. Alternatively, only a control IC having a characteristic variation resistance to an external electrostatic field of less than a predetermined value may be shielded.

In the above-described embodiment, in order to suppress the influence of the external static electric field on the drive control circuit, the drive control circuit is disposed outside the region where the electrostatic field can be generated, Solution is used for shielding from the other, but another means is to use a resin whose characteristic fluctuation resistance to an external electrostatic field is equal to or more than a predetermined value for the sealant of the active element constituting the drive control circuit. In addition, it is conceivable to use, as the active element, an active element whose characteristic fluctuation resistance to the polarization phenomenon of ions in the resin is equal to or more than a predetermined value. The same effect as described above can be obtained.

[0030]

According to the first aspect of the present invention, there is provided a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. However, since it is arranged outside a region where an electrostatic field can be generated in the semiconductor device with the application of a voltage to the semiconductor element, the drive control circuit may be affected by the electrostatic field and malfunction. Can be eliminated, and normal operation of the switching element can be ensured.

Further, according to the invention of claim 2 of the present application, in a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element, the drive control circuit Of the constituent elements, an active element sealed with a resin for protection from an external environment is disposed outside a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. Therefore, it is possible to eliminate the possibility that the drive control circuit is erroneously operated due to the influence of the electrostatic field, and to ensure the normal operation of the switching element.

Further, according to the invention of claim 3 of the present application, in a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element, the drive control circuit Only the control IC that can control the main operation of the circuit is arranged outside the region where an electrostatic field can be generated in the semiconductor device with the application of the voltage to the semiconductor device. Therefore, it is possible to eliminate the possibility that the drive control circuit may malfunction due to the influence of the electrostatic field, and it is possible to ensure the normal operation of the switching element.

According to a fourth aspect of the present invention, there is provided a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. The control circuit is
As the voltage is applied to the semiconductor element, the region where an electrostatic field can be generated in the semiconductor device is shielded by a shielding member, so that the drive control circuit may be affected by the electrostatic field and malfunction. It can be eliminated, and normal operation of the switching element can be ensured.

According to a fifth aspect of the present invention, there is provided a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. Among the elements constituting the control circuit, the active elements which are resin-encapsulated for protection from the external environment are shielded from a region where an electrostatic field can be generated in the semiconductor device with the application of a voltage to the semiconductor element. Since the drive control circuit is shielded by the member, the drive control circuit can be prevented from malfunctioning due to the influence of the electrostatic field, and normal operation of the switching element can be ensured.

Further, according to the invention of claim 6 of the present application, in a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element, Control IC capable of controlling the main operation of the circuit among the elements constituting the control circuit
Only the voltage applied to the semiconductor element is shielded by a shielding member from a region where an electrostatic field can be generated in the semiconductor device, so that the drive control circuit malfunctions due to the influence of the electrostatic field. The fear can be eliminated, and the normal operation of the switching element can be ensured.

According to a seventh aspect of the present invention, there is provided a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element. Among the elements constituting the control circuit, a resin whose characteristic fluctuation resistance to an external electrostatic field is equal to or more than a predetermined value is used as a sealant for an active element which is resin-encapsulated for protection from an external environment. It is possible to eliminate the possibility that the circuit will malfunction due to the influence of the electrostatic field, and it is possible to ensure the normal operation of the switching element.

Further, according to the invention of claim 8 of the present application, in a semiconductor device comprising a semiconductor element for switching a main current to a predetermined external circuit and a drive control circuit for driving the semiconductor element, Among the elements constituting the control circuit, as the active element sealed with resin for protection from the external environment, an element whose characteristic fluctuation resistance to a polarization phenomenon of ions in the resin is equal to or more than a predetermined value is used. Can be prevented from malfunctioning due to being affected by the electrostatic field, and normal operation of the switching element can be ensured.

[Brief description of the drawings]

FIG. 1 is a vertical sectional explanatory view showing an internal structure of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a vertical sectional explanatory view showing an internal structure of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is an explanatory longitudinal sectional view showing an internal structure of a semiconductor device according to a third embodiment of the present invention;

FIG. 4 is a vertical sectional explanatory view showing an internal structure of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is an explanatory longitudinal sectional view showing the internal structure of a conventional semiconductor device.

FIG. 6 is an explanatory view schematically showing an arrangement state of bromine ions contained in a resin.

FIG. 7 is an explanatory view showing the effect of an electric field on bromine ions in a resin.

[Explanation of symbols]

1 housing, 2A, 2B switching element, 5A, 5B
Electrode terminal, 6 Printed circuit board, 7 Various elements on printed circuit board, 8 Drive control circuit, 10 Semiconductor device for switching element, 15 Electrostatic field generation area, 27 Active element, 33 Shield plate

Claims (8)

[Claims] 1. A semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element, wherein the drive control circuit is adapted to generate a voltage when the voltage is applied to the semiconductor element. A semiconductor device, wherein the semiconductor device is arranged outside a region where an electrostatic field can be generated in the semiconductor device. 2. A semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element. An active element sealed with a resin for protection is arranged outside a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. 3. A semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element, wherein a main operation of the circuit among the elements constituting the drive control circuit A semiconductor device, wherein only a control IC capable of controlling the electric field is arranged outside a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. 4. A semiconductor device, comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element, wherein the drive control circuit is adapted to generate a voltage when a voltage is applied to the semiconductor element. A semiconductor device, wherein a region where an electrostatic field can be generated in the semiconductor device is shielded by a shielding member. 5. A semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element. A semiconductor device, wherein an active element sealed with a resin for protection is shielded by a shielding member from a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. . 6. A semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element, wherein a main operation of the circuit among the elements constituting the drive control circuit A semiconductor device, wherein only a control IC capable of controlling the temperature of the semiconductor device is shielded by a shielding member from a region where an electrostatic field can be generated in the semiconductor device with application of a voltage to the semiconductor element. 7. A semiconductor device comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element, wherein: A semiconductor device characterized in that a resin having a characteristic fluctuation resistance to an external electrostatic field that is equal to or higher than a predetermined value is used as a sealant for an active element to be sealed with a resin for protection. 8. A semiconductor device, comprising: a semiconductor element for switching a main current to a predetermined external circuit; and a drive control circuit for driving the semiconductor element. A semiconductor device, wherein an element having characteristic fluctuation resistance to a polarization phenomenon of ions in a resin is equal to or more than a predetermined value is used as an active element sealed with a resin for protection.