JP2002057397A - Semiconductor laser array package, semiconductor laser array light source unit, multi-beam scanner and image forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a semiconductor laser array package effectively increasing in number of laser light emitting units without vainly increasing a package size. SOLUTION: The semiconductor laser array package comprises a semiconductor laser array chip 11, a support substrate 15 having a positioning protrusion 15A formed at an outer peripheral edge to support the chip 11 and its accessory 13 and pins respectively penetrating a plurality of through holes Hi, and a cap 17 having a window 17A for emitting a laser beam and covering the chip 11 and the accessory 13 to fix a base 17B to the substrate 15. In this package, an outer diameter D (unit: mm) of the substrate 15 and a number N of the laser emitting units in the chip 11 satisfy conditions of N>=3, 1<=D-N<=4 and (D-2)/(N+2)>=0.64.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser array package, a semiconductor laser array light source unit, a multi-beam scanner, and an image forming apparatus.

[0002]

2. Description of the Related Art In order to improve the efficiency of optical scanning by an optical scanning device, a multi-beam scanning method for simultaneously optically scanning a plurality of scanning lines on a surface to be scanned has been proposed and is being put into practical use. In the multi-beam scanning method, a light source that simultaneously emits two or more light beams is required. As such a light source for multi-beam scanning, a semiconductor laser array chip in which a plurality of laser light emitting units are monolithically arrayed is used. The “built-in semiconductor laser array package” has been put to practical use. Currently, a semiconductor laser array package has a package size of 5.6 mm and two laser light emitting parts, and a package size of 9 mm and four laser light emitting parts.
Is known. When such a semiconductor laser array package is used, two or four scanning lines can be optically scanned at the same time. However, the multi-beam scanning method is intended to further increase the number of scanning lines that can be optically scanned at the same time. There is a demand for a large number of semiconductor laser array packages. If the package size is increased, it is easy to increase the number of semiconductor laser light emitting units, but there is naturally a limit on the package size allowed as the light source of the multi-beam scanning device.

[0003]

SUMMARY OF THE INVENTION An object of the present invention is to realize a semiconductor laser array package in which the number of laser light emitting portions is effectively increased without unnecessarily increasing the package size.

[0004]

A semiconductor laser array package according to the present invention has a semiconductor laser array chip, a support substrate, and a cap. The “semiconductor laser array chip” is a monolithic array of a plurality of laser light emitting units. The "support substrate" supports the semiconductor laser array chip and its accessories (such as wiring and light-receiving elements for backlight detection), and has a plurality of through-holes for individually connecting pins (for electrical connection to the outside). Used) is penetrated. The “cap” has a window for emitting laser light,
The semiconductor laser array is supported by the support substrate and is attached to the accessory, and the base is fixed to the support substrate.

The semiconductor laser array package according to the first aspect has the following features. That is, the support substrate has "a positioning projection formed on the outer peripheral edge portion". The outer diameter of the support substrate: D (unit: mm), the number of laser light emitting portions in the semiconductor laser array chip: N is the condition: N ≧ 3, 1 ≦ DN ≦ 4, and (D-2) /(N+2)≧0.64 is satisfied. The “outer diameter of the support substrate” is called “package size” in the above description, and the outer diameter does not include the size of the “positioning projection”.

The semiconductor laser array package according to the second aspect has the following features. That is, the support substrate has "a positioning notch formed in the outer peripheral edge portion". The outer diameter of the support substrate: D (unit: mm), the number of laser light-emitting portions in the semiconductor laser array chip: N, but the condition: N ≧ 3, 1 ≦ DN ≦ 4, and (D-2. 8) / (N + 2) ≧ 0.64 is satisfied. Also in the semiconductor laser array package according to the second aspect, the “outer diameter of the support substrate” is the “package size” and is a size ignoring the “notch for positioning”.

A semiconductor laser array light source unit according to the present invention is a light source unit using a semiconductor laser array, wherein a semiconductor laser array package and a coupling lens are unitized. The "semiconductor laser array package" is the one described in claim 1 or 2. The “coupling lens” is a lens that is provided in common to a plurality of laser beams emitted from the semiconductor laser array package and converts the divergent beam form of each laser beam into a desired beam form. In the semiconductor laser array light source unit according to the third aspect, the coupling lens and the semiconductor laser array package can be held and integrated by a common holder.

In this case, the semiconductor laser array package may be "press-fitted into the fitting hole provided in the holder" and held by the holder (claim 5). In a state where the cap is fitted in the fitting hole provided in the holder, the cap may be fixed to the holder by a fixing member and held by the holder. Each light beam emitted from the semiconductor laser array package is divergent, and the coupling lens converts these light beams into a desired light beam form suitable for the subsequent optical system. Therefore, the light beam form after being converted by the coupling lens is
"Weak divergent light flux whose initial divergence tendency is weakened" or conversely "convergent light flux" may be used,
It can also be a (substantially) parallel light beam. That is, in the semiconductor laser array light source unit according to any one of claims 3 to 6, the coupling lens may be a collimating lens (claim 7). When the light beam from the light source is converted into a parallel light beam by the coupling lens, the “degree of freedom of the arrangement position” of the subsequent optical system increases, which is convenient.

A multi-beam scanning apparatus according to the present invention is arranged such that a plurality of light beams from a light source side are deflected by a common light deflecting means, and the plurality of deflected light beams are collected toward a surface to be scanned by a common scanning and imaging optical system. A multi-beam scanning apparatus that forms a plurality of light spots on the surface to be scanned, separated from each other in the sub-scanning direction, and simultaneously optically scans a plurality of scanning lines on the surface to be scanned. “Scanning line” refers to the scanning trajectory of the light spot on the surface to be scanned. According to another aspect of the present invention, there is provided a multi-beam scanning device, wherein the semiconductor laser array package according to the first or second aspect is used as a light source. According to a ninth aspect of the present invention, there is provided the multi-beam scanning apparatus according to the eighth aspect, wherein "coupling of each divergent light beam from the semiconductor laser array package as a light source into a light beam form suitable for an optical system thereafter." A semiconductor laser array light source unit in which a lens and a semiconductor laser array package are unitized "is used, and the semiconductor laser array light source unit according to any one of claims 3 to 7 is used.

The image forming apparatus of the present invention is "an image forming apparatus which forms a latent image by writing an image on a photosensitive surface of a photosensitive medium by multi-beam scanning, and visualizes the latent image to obtain a desired image". Wherein the multi-beam scanning device according to claim 8 or 9 is used as a multi-beam scanning device for writing an image by multi-beam scanning. As the photosensitive medium, for example, a “silver salt film” can be used. In this case, the latent image written by the multi-beam scanning can be visualized by a developing / fixing method of a normal silver halide photographic process. As described above, when a silver halide film is used as the photosensitive medium, the image forming apparatus of the present invention can be implemented as an optical plate making apparatus or an optical drawing apparatus (for example, an apparatus for imaging CT scan data).

As the photosensitive medium, a "photoconductive photosensitive member" can be used. In this case, the latent image is formed as an electrostatic latent image by uniform charging of the photoconductor and image writing by multi-beam scanning, and is visualized as a toner image by a developing method of an electrophotographic process. As the photoconductive photoreceptor, a known appropriate one can be used. The toner image is transferred onto a sheet-like recording medium such as a transfer sheet or an OPC sheet (a plastic sheet for an overhead projector) directly from the photoreceptor or via an intermediate transfer medium such as an intermediate transfer belt. Is established. Photoconductive photoreceptors also
There is also a sheet-like material such as zinc oxide paper, in which case the toner image can be fixed directly on the photoreceptor.
The image forming apparatus according to the present invention can be implemented as a digital copying machine, an optical printer, an optical plotter, a facsimile, or the like.

Supplementing the description slightly, in claims 1 and 2, the number of laser light emitting portions: N is “N ≧ 3”. That is, the semiconductor laser array package of the present invention has "three or more laser light emitting parts". When N is 2 or less, it does not lead to the object of the invention, "increase in the number of laser light emitting units". Condition: In 1 ≦ DN ≦ 4, if the lower limit is exceeded,
Since the number of laser light emitting units is too large compared to the package size, mounting as a package becomes difficult. If the upper limit is exceeded, the package size will be larger than the number of laser light emitting units, and the condition for achieving the object, "without increasing the package size" will not be satisfied. Conditions in the semiconductor laser array package according to the first aspect: (D−2) / (N + 2) ≧ 0.64, and conditions in the semiconductor laser array package according to the second aspect: (D−2.8) / (N + 2) ≧ 0.64 is the package size (outer diameter of the support substrate) that can incorporate the semiconductor laser array chip having the number of laser emitting parts: N
Is a condition that defines the minimum value of.

[0013]

Embodiments of the present invention will be described below. FIG. 1 is a view for explaining an embodiment of a semiconductor laser array package according to the present invention. (A)
FIG. 3B shows a state cut along a virtual cross section as viewed from the front, FIG. 4B is a top view, and FIG. 3C is a bottom view. As shown in FIG. 1, a semiconductor laser array package 10 according to a first aspect includes a semiconductor laser array chip 11 in which a plurality of laser light emitting units are monolithically arranged in an array, and positioning projections 15A formed on an outer peripheral edge. , A semiconductor laser array chip 11 and its accessories (such as wiring and a light receiving element for detecting a backlight) 13 are supported, and a plurality of through holes H 1,
H2,. . Hi,. . Respectively, the connecting pins P1, P
2,. . Pi,. . Has a window 17A for emitting laser light, and is covered by the semiconductor laser array 11 and its accessories 13 supported by the support substrate 15, and the base 17B is fixed to the support substrate 15. Cap 1
And 7.

As shown in the drawing, when the outer diameter of the support substrate 15 is D (unit: mm) and the number of laser light emitting portions in the semiconductor laser array chip 11 is N, these are “N ≧ 3 and 1 ≦ D− N ≦ 4 and (D−2) / (N + 2) ≧
0.64 "is satisfied. As shown in FIG. 1, in the semiconductor laser array package 10 according to the first aspect, the positioning projection 15 </ b> A of the support substrate 15 protrudes from the outer peripheral surface of the support substrate 15. For this reason, the outer peripheral portion of the base 17B of the cap 17 can be set to be "close to the outer peripheral edge" of the support substrate 15. The cap 17 is adhered and fixed to the support substrate 15 by the base 17B. The width d of the base 15B used for this adhesion must be 0.5 mm. The connection pins Pi generally have a thickness of 0.2 to
Although it is about 0.4 mm, the diameter of the through hole Hi formed in the support substrate 15 to penetrate these pins Pi needs to be 1 mm. The pin P1 passing through the through hole H1 shown in FIG. 1C is used for grounding, and only this pin P1 is electrically connected to the support substrate 15.

One connection pin is provided for each laser light emitting portion of the semiconductor laser array chip, and one connection pin is provided for ground.
One is required for the light receiving element for detecting the backlight and the backlight. Therefore, if the number of laser light emitting units in the semiconductor laser array chip 11 is N, the required number of pins is N + 2. Since the accessory 13 is supported at the center of the support substrate 15, the through-hole Hi of the pin Pi is provided “at the outer peripheral side of the support substrate 15 in the cap 17, almost at the inner wall of the cap 15”. Therefore, the center of the through hole Hi is located 1 mm (width of the base 17A: 0.5 mm + radius of the through hole: 0.5 mm) from the outer peripheral portion of the support substrate 15. Then, the center of the through hole Hi is located on “the circumference of the diameter: D-2 mm”, and the circumference has a length of (D-2) π. In consideration of the strength of the support substrate 15 and the precision of the formation of the through-holes, the “space between the adjacent through-holes Hi” needs to have a certain size. According to the research of the inventor, on the circumference: (D-2) π (mm),
When the through-holes Hi having a diameter of 1 mm are minutely arranged, the number n of the through-holes that can be arranged should be a “natural number not exceeding (D−2) π / 2” in terms of mechanical strength and accuracy of the support substrate. I understood. If the number of through holes is larger than this, the strength of the support substrate is significantly reduced.

Assuming that the number of laser light emitting portions in the semiconductor laser array chip is N, the number of necessary pins is N + 2, and the supporting substrate 15 necessary for disposing these N + 2 pins as shown in FIG. Outside diameter: D (package size) becomes “(D−2) π / 2 ≧ N + 2”. When rewritten, “(D−2) / (N + 2) ≧ 2 / π = 0.
64 ".

FIG. 2 is a view for explaining an embodiment of the semiconductor laser array package according to the second aspect. (A) shows a state cut from a virtual cross section when viewed from the front, (b) is a top view, and (c) is a bottom view. In order to avoid complication, the same reference numerals as those in FIG. As shown in FIG. 2, the semiconductor laser array package 20 according to the second aspect has a semiconductor laser array chip 11 in which a plurality of laser light emitting units are monolithically arranged in an array, and a positioning notch 25A at an outer peripheral edge. The semiconductor laser array chip 11 is formed to support the semiconductor laser array chip 11 and its appendix 13, and is provided with a plurality of through holes H1, H2,. . Hi,. . Individually connected pins P1, P2,. . Pi,. . Has a window 27A for emitting laser light, and is covered with the semiconductor laser array chip 11 and its attachment 13 supported by the support substrate 25, and the base 27B is fixed to the support substrate 25. And a cap 27.

As shown in the figure, when the outer diameter of the support substrate 25 is D (unit: mm) and the number of laser light emitting portions in the semiconductor laser array chip 11 is N, these are “N ≧ 3 and 1 ≦ D− N ≦ 4 and (D−2.8) / (N +
2) ≧ 0.64 ”is satisfied. As shown in FIG. 2, in the semiconductor laser array package 20 according to the second aspect, the support substrate 15 has a positioning notch 25A. Therefore, the outer periphery of the base 27B of the cap 27 is set to be "close to the inside of the positioning notch provided on the outer periphery" of the support substrate 15. Depth of positioning notch 25A: e needs to be 0.4 mm. The cap 27 is attached to the support substrate 2 by its base 27B.
5, the width of the base 15 used for bonding, which is used for bonding: d
Is required to be 0.5 mm.

As in the first embodiment, the diameter of the through hole Hi formed in the support substrate 15 for allowing the pin Pi to penetrate must be 1 mm. In this case, the center of the through-hole Hi arranged as shown in FIG. 2C is 1.4 mm from the outer periphery of the support substrate 25 (depth of the positioning notch 25A: 0.4 mm, width of the base 17A:
0.5 mm + radius of through hole: 0.5 mm). Then, the center of the through hole Hi has a diameter of D-
Will be located on the circumference of 2.8 mm, and the circumference will be (D
-2.8) It has a length of π. Strength of the support substrate 15,
In consideration of the accuracy of the formation of the through hole, the circumference: (D-2.8)
When the through holes Hi having a diameter of 1 mm are minutely arranged on π (mm), the number n of the through holes that can be arranged does not exceed “(D-2.8) π / 2 from the viewpoint of strength and accuracy. Is a natural number.

The number of pins required for the number of laser light emitting portions in the semiconductor laser array chip is N + 2, and FIG.
The outer diameter D (package size) of the support substrate 25 necessary to be able to be arranged as shown in (c) is “(D-2.8) π /
2 ≧ N + 2 ”and rewritten as“ (D−2.8) /
(N + 2) ≧ 2 / π = 0.64 ”.

Package size of the semiconductor laser array package: D is, for example, D = 3 mm, 4 mm, 5
mm, 5.6 mm, 6 mm, 7 mm, 8 mm, and 9 mm. In this case, assuming that N ≧ 3, the condition: 1 ≦ D−
Considering N ≦ 4, D = 3 is a condition for N = 3:
It does not satisfy the lower limit of ≦ DN ≦ 4. Therefore, among the package sizes, the one that can be a semiconductor laser array package according to claim 1 or 2 is:
D = 4 mm, 5 mm, 5.6 mm, 6 mm, 7 mm, 8
mm and 9 mm. If N = 4, condition: 1 ≦ D−
D = 5 mm, 5.6 mm satisfying the lower limit of N ≦ 4
7 mm, 8 mm, and 9 mm. D = 6m when N = 5
Conditions for m, 7 mm, 8 mm, and 9 mm: 1 ≦ D−N
The lower limit of ≦ 4 is satisfied, and when N = 6, D = 7 mm and 8 m
Conditions for m and 9 mm: the lower limit of 1 ≦ DN ≦ 4 is satisfied, and when N = 7, conditions for D = 8 mm and 9 mm: 1
The lower limit of ≦ DN ≦ 4 is satisfied.

Conversely, considering the upper limit of the condition: 1 ≦ DN ≦ 4, the condition that the upper limit is not satisfied for N ≧ 3 is D>
7 mm, N = 4 not satisfying the upper limit is D> 8 m
m. That is, a list of cases where the condition: 1 ≦ DN ≦ 4 is satisfied as the package size: D,
It is as follows.

D = 4 N = 3 D = 5 N = 3, N = 4 D = 5.6 N = 3, N = 4 D = 6 N = 3, N = 4, N = 5 D = 7 N = 3, N = 4, N = 5, N = 6 D = 8 N = 4, N = 5, N = 6, N = 7 D = 9 N = 5, N = 6, N = 7, N = 8 Next In addition, for each value of the number of laser light emitting parts: N allowed for each of the above package sizes: D, each condition of claims 1 and 2: (D-2) / (N + 2) ≧ 0.63 (D-2. 8) / (N + 2) ≧ 0.63 When calculating the left side, the following is obtained.

DN (D−2) / (N + 2) (D−2.8) / (N + 2) 43 0.4 0.245 53 0.6 0.445 54 0.5 0.375 6.6 3 0.72 0.56 5.6 4 0.6 0.47 63 3 0.8 0.64 64 4 0.67 0.53 65 5 0.57 0.46 73 3 1.0 0. 84 7 4 0.83 0.7 7 5 0.71 0.6 7 6 0.63 0.53 8 4 1.0 0.87 8 5 0.85 0.74 8 6 0.75 0.65 8 7 0.67 0.57 95 5 1.0 0.88 96 6 0.88 0.78 97 7 0.77 0.68 9 0.7 0.7 0.62.

After all, the package size exemplified above: D
Among them, D = 5.6 mm, 6 mm, and 7 m are acceptable as the semiconductor laser array package according to claim 1.
m, 8 mm, and 9 mm, and the maximum value of the number of laser light emitting parts allowed for these package sizes is D = 5.
N = 3 for 6 mm, N = 4 for D = 6 mm, D
= 7 for N = 5, N = 7 for D = 8 mm, D =
N = 8 for 9. In the embodiment of FIG. 1, D = 8
This is an example in which N = 6 for mm.

Further, the above-exemplified package size: D
Among them, D = 6 mm, 7 mm, and 8 m are acceptable as the semiconductor laser array package according to claim 2.
m and 9 mm, and the maximum value of the number of laser emitting parts allowed for these package sizes is N = 3 for D = 6 mm, N = 4 for D = 7 mm, and N for D = 8. = 6, N = 7 for D = 9. The embodiment of FIG. 2 is an example in which N = 4 for D = 7 mm.
In view of the fact that "D = 5.6 mm and N = 2 and D = 9 mm and N = 4" in the conventionally known semiconductor laser array packages, both of the semiconductor laser array packages according to claims 1 and 2 have a " It will be understood that the number of laser emitting parts is effectively increased without unnecessarily increasing the package size.

FIG. 3 is a view for explaining one embodiment of the semiconductor laser array light source unit of the present invention. The semiconductor laser array light source unit 30 is provided commonly to the semiconductor laser array package 10 (or 20) and a plurality of laser light beams emitted from the semiconductor laser array package, and converts the divergent light beam form of each laser light beam to a desired light beam. The coupling lens 31 for converting into a form is unitized, and the semiconductor laser array package 10 (or 20) is formed as described above.
(Claim 3). In the embodiment of FIG. 3, the coupling lens 31 and the semiconductor laser array package 10 (or 20) are held and integrated by a common holder 33 (claim 4). The semiconductor laser array package 10 (or 20) is provided with a support substrate 15 in a fitting hole 33A provided in the holder 33.
(Or 25) is press-fitted and held by the holder 33 (claim 4).

The holder 33 is formed with a rod-shaped support portion 33B so as to be orthogonal to the base portion (the portion holding the semiconductor laser array package 10 (or 20)), and the coupling lens 31 is supported by this portion. . Holder 33
Is the semiconductor laser array package 10 (or 20)
In a state where the and the coupling lens 31 are held and integrated, they are attached to a casing (not shown) at the portion of the elongated hole 33c shown in FIG. FIG. 4 is a view for explaining another embodiment of the semiconductor laser array light source unit. In this embodiment, the semiconductor laser array package 10 (or 20) is held by the fixing member 35 with the cap 15 (or 25) fitted in the fitting hole 33A 'provided in the holder 33'. 33 '(claim 6). The fixing is “screwed” by screws 37, 38.

The holder 33 'has a base portion (a portion for holding the semiconductor laser array package 10 (or 20)).
A rod-shaped support portion 33B 'is formed so as to be orthogonal to
The coupling lesbian 31 is supported by this portion. The holder 33 'is attached to a casing (not shown) in a state where the semiconductor laser array package 10 (or 20) and the coupling lens 31 are held and integrated. In addition,
In the embodiment shown in FIGS. 3 and 4, the coupling lens 31 is a collimating lens (claim 7).

FIG. 5 is a diagram showing an embodiment of the multi-beam scanning device according to the present invention. That is, in this multi-beam scanning device, a plurality of light beams from the light source side are deflected by the rotating polygon mirror 3, which is a common light deflecting unit, and the plurality of deflected light beams are shared by a common scanning and imaging optical system (fθ lens 4 and The optical path bending mirror 5 and the long toroidal lens 6) converge light toward the photoconductive photoreceptor 9, which is the actual surface of the surface to be scanned. 3. A semiconductor laser array package according to claim 1, which is a multi-beam scanning device that forms a plurality of "separated light spots" and simultaneously optically scans a plurality of scanning lines on a surface to be scanned. This is a multi-beam scanning device using the laser array package 10 or 20). The light source unit denoted by reference numeral 1 converts each divergent light beam from the semiconductor laser array package (the semiconductor laser array package 10 or 20 in the above-described embodiment) as a light source into a light beam form suitable for an optical system thereafter. A semiconductor laser array light source unit in which a coupling lens (the coupling lens 31 in the above embodiment) and a semiconductor laser array package are unitized (described with reference to FIG. 3 or FIG. 4).
Is stored in a casing (claim 9).

A plurality of light beams emitted from the light source unit 1 are converted into parallel light beams by the action of a coupling lens, and are beam-shaped by a “beam shaping aperture” built in the light source unit 1. A plurality of light beams emitted from the light source unit 1 are respectively condensed in the sub-scanning direction by the cylindrical lens 2, and are separated from each other in the sub-scanning direction by a “long line in the main scanning direction” at the position of the deflecting reflection surface of the rotary polygon mirror 3. An image is formed. When the rotating polygon mirror 3 moves at a uniform speed in the direction of the arrow,
Each reflected light beam is deflected at a uniform angular velocity, and the fθ lens 4
And firstly enters the reflecting mirror 7 and is reflected there.
Is received by the The start timing of optical scanning by each deflected light beam is determined based on the light receiving signal generated by the light receiving unit 8. The deflected light beam is bent along the optical path by the optical path bending mirror 5 irrespective of the deflection to form a long toroidal lens 6.
Are formed on the photosensitive surface of the photosensitive member 9 to form light spots separated in the sub-scanning direction, and a plurality of scanning lines are simultaneously optically scanned. In addition, the semiconductor laser array light source unit is
By rotating the coupling lens about the optical axis, the interval of each light spot on the surface to be scanned in the sub-scanning direction can be adjusted.

Finally, an embodiment of the image forming apparatus will be described with reference to FIG. This image forming apparatus is a “laser printer”. The laser printer 100 uses the photosensitive medium 1
Reference numeral 11 denotes a “photoconductive photoconductor formed in a cylindrical shape”. Around the photosensitive medium 111, a charging roller 112 as a charging unit, a developing device 113, a transfer roller 1
14. A cleaning device 115 is provided. A well-known "corona charger" can be used as the charging means. As the photoreceptor, a “belt-shaped one” can be used. Further, a multi-beam scanning device 117 using a laser beam LB is provided, and “exposure by multi-boom scanning” is performed between the charging roller 112 and the developing device 113.
Then, image writing is performed. The multi-beam scanning device 117 is as described with reference to FIG. In FIG. 6, reference numeral 116 denotes a fixing device, and reference numeral 11 denotes a fixing device.
8 is a cassette, 119 is a pair of registration rollers, 1
Reference numeral 20 denotes a paper feed roller, reference numeral 121 denotes a conveyance path, reference numeral 122 denotes a pair of paper discharge rollers, reference numeral 123 denotes a tray, and reference numeral P denotes a transfer sheet as a “sheet-shaped recording medium”. When an image is formed, a photosensitive medium 111, which is a photoconductive photosensitive member, is rotated clockwise at a constant speed, and the surface thereof is charged with a charging roller 112.
, And is exposed to the laser beam LB of the multi-beam scanning device 117 by optical writing to form an electrostatic latent image. The formed electrostatic latent image is a so-called “negative latent image”, and the image portion is exposed. The multi-beam scanning by the multi-beam scanning device 117 may be “adjacent scanning” or “interlaced scanning”. This electrostatic latent image is
The toner image is formed on the image carrier 111 by reversal development by the developing device 113. The cassette 118 containing the transfer paper P is detachable from the main body of the image forming apparatus 100. When the cassette 118 is mounted as shown in FIG. Is done. The fed transfer paper P has its leading end held by a pair of registration rollers 119. The registration roller pair 119 sends the transfer paper P to the transfer section at the same timing as the toner image on the image carrier 111 moves to the transfer position. The transferred transfer paper P is superimposed on the toner image at the transfer section, and the toner image is electrostatically transferred by the action of the transfer roller 114. Transfer paper P on which toner image has been transferred
Is sent to a fixing device 116, where the toner image is fixed by the fixing device 116, and is discharged onto a tray 123 by a pair of paper discharge rollers 122 through a conveyance path 121. The surface of the image carrier 111 after the transfer of the toner image is cleaned by the cleaning device 115 to remove residual toner, paper dust, and the like. The above-mentioned OH is used instead of the transfer paper.
A P sheet or the like can also be used.
It may be performed via an “intermediate transfer medium” such as an intermediate transfer belt. By using the multi-beam scanning device 117 as shown in FIG. 5, good image formation can be performed.

Accordingly, the image forming apparatus is provided with the photosensitive medium 1
11. An image forming apparatus for forming a latent image by performing optical scanning on a photosensitive surface of an optical scanning device 117 and visualizing the latent image to obtain an image, wherein the optical scanning device performs optical scanning of a photosensitive surface of a photosensitive medium. As the 117, the multi-beam scanning device according to the eighth or ninth aspect is used (claim 10), wherein the photosensitive medium 111 is a photoconductive photoreceptor, and the photosensitive medium 111 is uniformly charged and multi-beam scanned. The formed electrostatic latent image is visualized as a toner image (claim 11).

[0034]

As described above, according to the present invention, a novel semiconductor laser array package, a semiconductor laser array light source unit, a multi-beam scanning device, and an image forming apparatus can be realized. As described above, the semiconductor laser array package of the present invention can effectively increase the number of laser light emitting units without unnecessarily increasing the package size. Therefore, in the multi-beam scanning device of the present invention, by using such a semiconductor laser array package, the number of scanning lines to be simultaneously scanned can be increased without increasing the size of the light source unit, and efficient image writing can be realized. The image forming apparatus according to the present invention can realize high-speed image formation by using the multi-beam scanning device.

[Brief description of the drawings]

FIG. 1 is a view for explaining one embodiment of a semiconductor laser array package according to claim 1;

FIG. 2 is a view for explaining one embodiment of the semiconductor laser array package according to the second embodiment;

FIG. 3 is a view for explaining one embodiment of a semiconductor laser array light source unit of the present invention.

FIG. 4 is a view for explaining another embodiment of the semiconductor laser array light source unit of the present invention.

FIG. 5 is a diagram for explaining an embodiment of the multi-beam scanning device according to the present invention.

FIG. 6 is a view for explaining an embodiment of the image forming apparatus of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Semiconductor laser array package 11 Semiconductor laser array chip 13 Accessories for mounting semiconductor laser array chip 15 Support substrate 17 Cap 15A Alignment projection Pi pin

Continued on the front page F term (reference) 2C362 AA03 AA14 AA15 AA43 AA45 DA08 2H045 AA01 BA23 BA33 CB65 DA02 DA24 DA26 5C051 AA02 CA03 CA07 DB02 DB22 DB24 DB30 DC02 DC05 DC07 FA01 5F073 AB05 AB21 AB25 AB27 AB29 FA07 FA03 FA

Claims (11)

[Claims] 1. A semiconductor laser array chip in which a plurality of laser light emitting portions are monolithically arranged in an array, and a positioning projection is formed on an outer peripheral portion to support the semiconductor laser array chip and its accessories. Each of the through holes has a supporting substrate through which a connection pin is penetrated, and a window for emitting laser light. The supporting substrate is covered with the semiconductor laser array chip supported by the supporting substrate and an accessory thereof. An outer diameter of the support substrate: D (unit: mm), the number of laser emitting portions in the semiconductor laser array chip: N, and a condition: N ≧ 3 and 1 ≦ DN ≦ 4 and (D−2) / (N + 2) ≧ 0.64. 2. A semiconductor laser array chip in which a plurality of laser light emitting portions are monolithically arranged in an array, and a positioning notch is formed in an outer peripheral portion to support the semiconductor laser array chip and its accessories. Each of the through holes has a support substrate through which a connection pin is penetrated, and has a window for emitting laser light, and is covered by the semiconductor laser array chip supported by the support substrate and its accessory, An outer diameter of the support substrate: D (unit: mm), the number of laser light emitting portions in the semiconductor laser array chip: N, and a condition: N ≧ 3, and A semiconductor laser array package, wherein 1 ≦ D−N ≦ 4 and (D−2.8) / (N + 2) ≧ 0.64. 3. A light source unit using a semiconductor laser array, wherein the light source unit is provided in common for a semiconductor laser array package and a plurality of laser beams emitted from the semiconductor laser array package, and forms a divergent beam form of each laser beam. 3. The semiconductor laser array package according to claim 1, wherein a coupling lens for converting into a desired light beam form is unitized.
9. A semiconductor laser array light source unit according to claim 1. 4. The semiconductor laser array light source unit according to claim 3, wherein the coupling lens and the semiconductor laser array package are integrated by being held by a common holder. . 5. The semiconductor laser array light source unit according to claim 4, wherein said semiconductor laser array package is held by said holder by press-fitting a support substrate into a fitting hole provided in said holder. Semiconductor laser array light source unit. 6. The semiconductor laser array light source unit according to claim 4, wherein the semiconductor laser array package is fixed to the holder by a fixing member in a state in which a cap is fitted in a fitting hole provided in the holder. A semiconductor laser array light source unit characterized by the above-mentioned. 7. The semiconductor laser array light source unit according to claim 3, wherein the coupling lens is a collimating lens. 8. A light beam from a light source is deflected by a common light deflecting means, and a plurality of deflected light beams are converged toward a surface to be scanned by a common scanning and imaging optical system. 3. The semiconductor laser according to claim 1, wherein a plurality of light spots separated from each other in the sub-scanning direction are formed on the surface, and the plurality of scanning lines on the surface to be scanned are optically scanned at the same time. A multi-beam scanning device using an array package. 9. The coupling lens according to claim 8, wherein each divergent light beam from the semiconductor laser array package as a light source is formed into a light beam form suitable for an optical system thereafter, and a semiconductor laser array. 4. A semiconductor laser array light source unit comprising a package and a unit, wherein the semiconductor laser array light source unit is used.
7. A multi-beam scanning apparatus using any one of items 1 to 7. 10. An image forming apparatus for writing an image on a photosensitive surface of a photosensitive medium by multi-beam scanning to form a latent image and visualizing the latent image to obtain a desired image. An image forming apparatus using the multi-beam scanning device according to claim 8 as a multi-beam scanning device for performing writing. 11. The image forming apparatus according to claim 10, wherein the photosensitive medium is a photoconductive photoreceptor, and the formed electrostatic latent image is visualized as a toner image.