JP2002048646A - 赤外線検出器および測温計 - Google Patents
赤外線検出器および測温計Info
- Publication number
- JP2002048646A JP2002048646A JP2000238745A JP2000238745A JP2002048646A JP 2002048646 A JP2002048646 A JP 2002048646A JP 2000238745 A JP2000238745 A JP 2000238745A JP 2000238745 A JP2000238745 A JP 2000238745A JP 2002048646 A JP2002048646 A JP 2002048646A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- temperature
- lens
- heat
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 37
- 239000006096 absorbing agent Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 210000003454 tympanic membrane Anatomy 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 11
- 238000005304 joining Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 238000005259 measurement Methods 0.000 description 69
- 238000001514 detection method Methods 0.000 description 41
- 238000000034 method Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 230000036760 body temperature Effects 0.000 description 16
- 230000001965 increasing effect Effects 0.000 description 16
- 239000010409 thin film Substances 0.000 description 16
- 230000008859 change Effects 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 102100031250 Disks large-associated protein 1 Human genes 0.000 description 4
- 102100031245 Disks large-associated protein 2 Human genes 0.000 description 4
- 101150020562 Dlgap2 gene Proteins 0.000 description 4
- 101000731000 Homo sapiens Membrane-associated progesterone receptor component 1 Proteins 0.000 description 4
- 101100062430 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DAP2 gene Proteins 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 229910006367 Si—P Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Measuring And Recording Apparatus For Diagnosis (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000238745A JP2002048646A (ja) | 2000-08-07 | 2000-08-07 | 赤外線検出器および測温計 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000238745A JP2002048646A (ja) | 2000-08-07 | 2000-08-07 | 赤外線検出器および測温計 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002048646A true JP2002048646A (ja) | 2002-02-15 |
| JP2002048646A5 JP2002048646A5 (enrdf_load_stackoverflow) | 2005-03-03 |
Family
ID=18730398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000238745A Withdrawn JP2002048646A (ja) | 2000-08-07 | 2000-08-07 | 赤外線検出器および測温計 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002048646A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187050B2 (en) | 2003-10-06 | 2007-03-06 | Japan Aviation Electronics Industry Limited | Optical sensor and method of manufacturing the same |
| JP2009189784A (ja) * | 2008-02-18 | 2009-08-27 | Fortune Semiconductor Corp | 温度センサーモジュール |
| WO2010090188A1 (ja) * | 2009-02-04 | 2010-08-12 | セイコーインスツル株式会社 | 輻射センサおよびその製造方法 |
| JP2010197335A (ja) * | 2009-02-27 | 2010-09-09 | Ritsumeikan | 赤外線センサ及びその製造方法 |
| CN112113664A (zh) * | 2019-06-19 | 2020-12-22 | 孙春元 | 红外温度传感器及包括其的探头、红外体温计 |
| CN112119290A (zh) * | 2018-03-16 | 2020-12-22 | Ams传感器英国有限公司 | 热电堆自测试和/或自校准 |
-
2000
- 2000-08-07 JP JP2000238745A patent/JP2002048646A/ja not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187050B2 (en) | 2003-10-06 | 2007-03-06 | Japan Aviation Electronics Industry Limited | Optical sensor and method of manufacturing the same |
| US7572648B2 (en) | 2003-10-06 | 2009-08-11 | Japan Aviation Electronics Industry Limited | Method of manufacturing optical sensor |
| JP2009189784A (ja) * | 2008-02-18 | 2009-08-27 | Fortune Semiconductor Corp | 温度センサーモジュール |
| WO2010090188A1 (ja) * | 2009-02-04 | 2010-08-12 | セイコーインスツル株式会社 | 輻射センサおよびその製造方法 |
| JP2010197335A (ja) * | 2009-02-27 | 2010-09-09 | Ritsumeikan | 赤外線センサ及びその製造方法 |
| CN112119290A (zh) * | 2018-03-16 | 2020-12-22 | Ams传感器英国有限公司 | 热电堆自测试和/或自校准 |
| CN112113664A (zh) * | 2019-06-19 | 2020-12-22 | 孙春元 | 红外温度传感器及包括其的探头、红外体温计 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040331 |
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| A621 | Written request for application examination |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050315 |
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| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20050428 |