JP2002043451A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device that is small, light, and thin, and where resin does not infiltrate into a light receiving part of a semiconductor element and thus light receiving characteristics are not deteriorated. SOLUTION: This device comprises the semiconductor element 1 where the light receiving part 2 is equipped at a center region of a lower surface and an electrode 5 is formed at a peripheral region of the lower surface, a transparent member 3 where an outline dimension is larger than the light receiving part 2 and smaller than the lower surface of the semiconductor element 1, and a wiring board 7 where a through-hole is equipped which aperture dimension is larger than the transparent member 3 and smaller than the lower surface of the semiconductor element 1, and an electrode pad is equipped at a periphery of the through-hole of a top surface corresponding to the electrode 5. The transparent member 3 is attached to the lower surface of the semiconductor element 1 so as to cover the light receiving part 2, the transparent member 3 is inserted into the through hole, and the electrode 5 of the semiconductor element 1 and the electrode pad of the wiring board 7 are connected by using a conductive member so as to locate the lower surface of the member 3 within the through- hole.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which is a light receiving element such as a photodiode, a line sensor, an image sensor or the like or a semiconductor device provided with a semiconductor element having these light receiving portions.

[0002]

2. Description of the Related Art A conventional semiconductor device having a light receiving element such as a photodiode (PD), a line sensor, and an image sensor or a semiconductor device having a semiconductor element having these light receiving portions is configured as follows. . The semiconductor element is placed inside a container body composed of a base made of ceramics or the like as a bottom plate on which the semiconductor element is placed, and a frame made of ceramics or the like provided around the periphery of the base so as to surround the semiconductor element. Placed and bonded and fixed, the electrode of the semiconductor element and the electrode pad for external connection on the upper surface of the substrate are connected by a metallized layer or the like provided on the upper surface of the substrate, and a glass or the like having substantially the same shape as the outer shape of the upper surface of the frame body It is produced by placing the lid having the above structure on the upper part of the frame and sealing it with resin.

Various structures have been proposed in order to make the semiconductor device smaller and lighter and thinner.

For example, as a conventional example 1, a solid-state image pickup device in which a glass substrate provided with terminals, a microlens on an image pickup surface which is spaced apart on the glass substrate surface, and mounted and arranged facing each other, and a solid-state image pickup device terminal And a bump that electrically connects between the glass substrate terminals and a resin layer that integrally seals the peripheral surface of the solid-state imaging device while forming a space between the microlens surface and the glass substrate surface of the opposed solid-state imaging device. By providing the microlens surface, it is possible to adopt a configuration in which a different material is prevented from coming into direct contact with the microlens surface, the microlens function is always sufficiently ensured, the assembly is simplified, and the productivity is increased. (See Japanese Patent Application Laid-Open No. 7-231074).

As a second conventional example, a light-transmitting member such as glass, quartz, sapphire, or transparent resin is used for a light-receiving portion of a semiconductor element, with respect to a semiconductor element having a light-receiving element such as a PD, a line sensor, and an image sensor. By arranging only in the light receiving area of the semiconductor element so that a space is formed between the light receiving area and the surface, and sealing the light receiving area, the size and weight can be reduced, and the light receiving section of the sealing resin can be achieved. One that can prevent intrusion into an area has been proposed (Japanese Patent Laid-Open No.
-26882).

[0006]

However, in the above-mentioned conventional example 1, an electrode terminal for electrically connecting the semiconductor element and the glass substrate is provided on the glass substrate, and this electrode terminal is formed by a thin film forming method or the like. Is formed and patterned, so that the surface of the glass substrate is attacked by an etchant when patterning the electrode terminals, or a thin film metal layer that forms the terminals remains in the glass portion located above the light receiving area. As a result, the problem that the light receiving characteristic deteriorates is likely to occur. In addition, since the process of forming the terminals on the glass substrate is long, the surface of the glass substrate is scratched, a foreign substance is attached, or the glass substrate is broken by mistake. .

On the other hand, in the above conventional example 2, a light transmitting member is provided only in the light receiving area of the semiconductor element, and the light receiving area is sealed with a synthetic resin such as polyimide, epoxy resin or phenol resin. However, in this case, there is a problem that the applied sealing resin penetrates into the light receiving portion area by a capillary phenomenon, and a part of the light receiving portion area is covered with the sealing resin, thereby deteriorating light receiving characteristics. It was easy to occur. Further, when light enters from the side direction of the light-transmitting member disposed above the light-receiving portion area of the semiconductor element to deteriorate light receiving characteristics, or when a semiconductor element provided with the light-transmitting member is used, The problem that the surface of the translucent member is erroneously scratched or a foreign matter adheres easily is likely to occur. Furthermore, it has been proposed to electrically connect a semiconductor element to a light-transmitting member such as glass, quartz, sapphire, or transparent resin provided with wiring (terminals) via Au, solder, or the like. When the wiring is formed on the conductive member, the same problem as in the case of Conventional Example 1 is likely to occur.

Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to realize a semiconductor which can be reduced in size, weight and thickness without using a transparent member such as glass provided with electrode terminals. In addition to providing a device, it is possible to prevent a sealing resin from entering a light receiving portion area of a semiconductor element and to deteriorate light receiving characteristics, prevent light incident from a side direction of a light transmitting member, and a transparent member. An object of the present invention is to prevent scratches and foreign matter from adhering to the surface.

[0009]

According to the present invention, there is provided a semiconductor device comprising:
A light-receiving portion is provided in a central region of the lower surface, and a semiconductor element in which an electrode is formed in a peripheral region of the lower surface; a translucent member whose outer dimensions are larger than the light-receiving portion and smaller than the lower surface of the semiconductor element; A through-hole having an opening dimension larger than the translucent member and smaller than the lower surface of the semiconductor element, and a wiring board provided with an electrode pad corresponding to the electrode around the through-hole on the upper surface; Comprising
The light-transmitting member is attached to the lower surface of the semiconductor element so as to cover the light-receiving portion, and the light-transmitting member is inserted into the through hole so that the lower surface is located in the through hole. An electrode of the semiconductor element and an electrode pad of the wiring board are connected by a conductive member.

According to the present invention, since the semiconductor device can be manufactured so as to have substantially the same thickness as the total thickness of the semiconductor element and the wiring board, the semiconductor device can be made extremely small, light and thin. Further, the wiring board arranged so as to surround the light transmitting member can prevent light incident from the side surface direction of the light transmitting member.

Further, when the translucent member is adhered to the lower surface of the semiconductor element with the ultraviolet curable resin, the ultraviolet curable resin can be cured immediately after the application, so that it is prevented from entering the light receiving portion of the semiconductor element. be able to. Therefore,
It is possible to prevent the ultraviolet curable resin from entering the light receiving portion area of the semiconductor element and to deteriorate the light receiving characteristic, and it is not necessary to manufacture and arrange a separate frame for connecting the semiconductor element, thereby manufacturing at low cost. The workability of the assembly can be improved.

In the present invention, preferably, the distance between the lower surface of the translucent member and the opening of the through hole on the lower surface side of the wiring board is set to 0.01 to 2 mm.
Thus, even when the semiconductor device is arranged with the light-transmitting member facing downward, the light-transmitting member is arranged within the range of the thickness of the wiring board so that its lower surface does not reach the lower end of the opening. Therefore, it is possible to prevent the light-transmissive member from being scratched or from adhering foreign matter.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention will be described below. 1A and 1B are a cross-sectional view and a bottom view of a semiconductor device of the present invention. In FIG. 1, reference numeral 1 denotes a photodiode (PD), a line sensor, an image sensor, a CCD (Charge Coupled Device), and an EPRO.
A semiconductor element which is a light receiving element such as an M (Erasable Programmable ROM) or a semiconductor element having these light receiving sections, 2 is a light receiving section of a semiconductor element, 3 is a light transmitting member made of glass, quartz, sapphire, transparent resin, etc. Reference numeral 4 denotes an ultraviolet curable resin made of an acrylic resin, an epoxy resin, a silicone resin, a polyetheramide resin, or the like. The ultraviolet curable resin may be a combination type having thermosetting properties. Reference numeral 5 denotes an electrode formed on the semiconductor element 1, and reference numeral 6 denotes a conductive bump as a conductive member that connects the electrode 5 of the semiconductor element 1 and an electrode pad of the wiring board 7.

In the present invention, the semiconductor element 1 is provided with a light receiving portion 2 in a central region on the lower surface, and an input / output electrode 5 is formed in a peripheral region on the lower surface.

The translucent member 3 covers the light receiving section 2 so as to cover the light receiving section 2.
The lower surface of the light receiving section 2 is bonded and attached to the outer periphery of the light receiving section 2 with an ultraviolet curable resin 4 and functions as a window and a cover for transmitting external light. The outer dimensions of the translucent member 3 are larger than the light receiving portion 2 of the semiconductor element 1 and smaller than the lower surface of the semiconductor element 1, and the shape thereof is not limited to a flat plate having a main surface made flat. It may be processed into a lens shape. The thickness of the translucent member 3 is 0.3 to 1.0 m
If m is less than 0.3 mm, the strength is low, so that problems such as breakage during assembly and warping due to resin sealing and distortion of the captured image are likely to occur. 1.
When the thickness exceeds 0 mm, the size and weight and the thickness are not reduced, and the practicality is reduced.

The light-transmitting member 3 may be made of glass such as soda glass, plastic, or sapphire (single crystal of alumina) in terms of light transmittance, ease of production, chemical stability, strength, and the like. ), Quartz and the like are preferred.

The distance between the semiconductor element 1 and the translucent member 3, which is defined by the height of the ultraviolet curable resin 4, is 0.01.
The thickness is preferably 0.5 mm or less, and if it is less than 0.01 mm, a problem such as contact with the microlens of the light receiving unit 2 may occur. descend.

The UV-curable resin 4 is preferably colored in a dark color such as black, black-gray, brown, brown, black-brown, dark green, dark blue, blue-green, dark purple, or dark red. In this case, a dark color system can be easily obtained by mixing a dye, a pigment and the like into the ultraviolet curable resin 4. As described above, by making the ultraviolet curable resin 4 a dark color, reflection and scattering of light on the surface of the ultraviolet curable resin 4 can be suppressed.

As the pigment, carbon, titanium, iron oxide, or a mixture of two or more thereof is preferable. In this case, the pigment becomes a black pigment and has the highest light absorption. The content of the pigment with respect to the total solid components of the UV-curable resin 4 is preferably 0.1 to 50% by weight. If the content is less than 0.1% by weight, coloring becomes difficult. If the content exceeds 50% by weight, the UV-curable resin 4 is irradiated. The ultraviolet rays to be blocked are blocked by the pigment, and it becomes difficult to cure the ultraviolet curable resin 4. In the case of conductive particles of carbon or the like, those obtained by coating the conductive particles with an acrylic resin or the like can also be used. Further, particles of alumina or the like can be used, which can be made dark purple by mixing Cr or the like.

The average particle size of the pigment particles is about 0.0
The thickness is preferably from 5 to about 1 μm, and if it is less than 0.05 μm, the particles aggregate and the dispersibility tends to decrease. If it exceeds 1 μm, the gap between the particles becomes large, the ultraviolet rays are easily blocked by the particles, and the curability and adhesiveness of the ultraviolet-curable resin 4 are easily reduced.

Regarding the lightness, chroma, and light transmittance of the ultraviolet curable resin 4, if the resin is colored completely black or the like, ultraviolet rays are easily blocked by the particles, and the curability of the ultraviolet curable resin 4 decreases. Therefore, those made semi-transparent or colored brown are preferable in that they do not impair the curability of the ultraviolet-curable resin 4.

When a dye is used, a dye base made of a natural resin such as gelatin, glue or casein or a synthetic resin such as an amine-modified polyvinyl alcohol is dyed with a dye such as an acid dye, and the dye is then cured with an ultraviolet curable resin. 4 can be colored.

Further, a matting agent may be contained in order to suppress the reflection and scattering of light on the surface of the ultraviolet curable resin 4.

The wiring board 7 has a through hole having an opening size larger than the outer size of the main surface of the light transmitting member 3 and smaller than the outer size of the lower surface of the semiconductor element 1. 3 is inserted so that the lower surface thereof is located in the through hole. Also, the electrode 5 formed on the semiconductor element 1
The semiconductor element 1 and the wiring board 7 are electrically connected by connecting the electrode pads provided around the through holes on the upper surface of the wiring board 7 so as to correspond to the electrodes 5 by conductor bumps 6 made of solder or the like. Connected.

The wiring substrate 7 is made of a ceramic material such as alumina (Al ₂ O ₃ ) ceramic, mullite (3Al ₂ O ₃ .2SiO ₂ ) ceramic, an inorganic material such as a glass ceramic material, or an ethylene tetrafluoride resin (polyethylene). Tetrafluoroethylene; PTFE), ethylene tetrafluoride / ethylene copolymer resin (tetrafluoroethylene-ethylene copolymer resin; ETFE), ethylene tetrafluoride / perfluoroalkoxyethylene copolymer resin (tetrafluoroethylene-perfluteroalkyl) Resin-based materials such as vinyl ether copolymer resin (PFA), fluorine resin, glass epoxy resin, bismaleid triazine resin, and polyimide can be used.

The thickness of the wiring board 7 is preferably about 0.3 mm to 3 mm. If the thickness is less than 0.3 mm, the strength of the wiring board 7 is reduced, and the problem of breakage during assembly is likely to occur. When it exceeds 3 mm, the size and weight and the thickness are not reduced, and the practicality is reduced.

The electrode 5 is made of Al, Ni, Pd, Pt, T
at least one of i, Cr, Au, Ag, Cu, etc.
It is made of a metal or alloy containing seeds, and is formed by various thin film forming methods, plating methods, metallizing methods, and the like.

The electrode 5 and the wiring board 7 are electrically connected to each other by a conductive member such as a metal bump such as Au or Pb-Sn solder, or a conductive bump 6 made of a conductive resin or an anisotropic conductive resin. Connected.

In the present invention, the distance between the lower surface of the light transmitting member 3 and the opening (lower end) of the through hole on the lower surface side of the wiring board 7 is preferably 0.01 to 2 mm. 0.01mm
If the distance is less than 2 mm, there is a tendency that a problem occurs such that the light transmitting member 3 is scratched or a foreign substance adheres. If the distance exceeds 2 mm, the amount of light incident on the light receiving section 2 decreases, resulting in a dark image. Would.

Further, in the semiconductor device of the present invention, a large number of wiring board 7 regions having through holes in the mother board are prepared, and then the semiconductor element 1 to which the translucent member 3 is adhered is mounted in each through hole portion. Finally, the semiconductor device may be cut and divided into individual semiconductor devices by a dicing method or the like.

Further, in order to supplement the bonding strength between the semiconductor element 1 and the wiring board 7, a joint between the electrode 5, the conductor bump 6 and the electrode pad, and a connection between the semiconductor element 1 and the wiring board 7 around the joint are provided. Partly covered, thermosetting of phenolic resin, silicone resin, acrylic resin, polyetheramide resin, urea resin, melamine resin, polyester resin, epoxy resin, silicon resin, diallyl phthalate, or polyurethane The conductive resin may be applied and cured.

As described above, the present invention can be formed to have a thickness substantially equal to the total thickness of the semiconductor element and the wiring board, so that a very small, light and thin semiconductor device can be obtained. In addition, an extraneous external light incident from the side of the light-transmitting member can be prevented by the wiring board of a dark color, which is arranged so as to surround the light-transmitting member. Further, when the translucent member is bonded with the ultraviolet curable resin, it can be cured immediately after the application of the ultraviolet curable resin, so that it can be prevented from entering the light receiving portion of the semiconductor element. Therefore, it is possible to prevent the ultraviolet curable resin from entering the light receiving portion area of the semiconductor element and to deteriorate the light receiving characteristic, and to prepare and arrange a separate frame or the like for bonding the light transmitting member to the semiconductor element. Since there is no necessity, it can be manufactured at low cost, and the workability of assembly is improved.

It should be noted that the present invention is not limited to the above embodiment, and that various changes may be made without departing from the spirit of the present invention.

For example, in the above embodiment, as shown in FIG. 1B, the shape of the semiconductor element 1 is a rectangular shape such as a substantially rectangular shape or a substantially square shape. The through holes are also rectangular, but they are not limited to squares, and may be various shapes such as polygonal, circular, and elliptical. Further, the wiring substrate 7 does not need to be entirely of a dark color system, and in the case of a transparent substrate such as a transparent resin substrate, at least the periphery of the through hole may be colored with a predetermined width in a dark color system.

[0035]

According to the present invention, there is provided a semiconductor device in which a light receiving portion is provided in a central region of a lower surface and an electrode is formed in a peripheral region of the lower surface, wherein the outer dimensions are larger than the light receiving portion and smaller than the lower surface of the semiconductor device. A wiring board in which a translucent member, a through-hole having an opening dimension larger than the translucent member and smaller than the lower surface of the semiconductor element, and an electrode pad corresponding to the electrode are provided around the through-hole on the upper surface; A light-transmitting member is attached to the lower surface of the semiconductor element so as to cover the light-receiving portion, and the light-transmitting member is inserted into the through hole so that the lower surface is located in the through hole. By connecting the electrode of the semiconductor element and the electrode pad of the wiring board with a conductive member,
Since the semiconductor device can be manufactured to have a thickness substantially equal to the total thickness of the semiconductor element and the wiring substrate, an extremely small, lightweight, and thin semiconductor device can be obtained. Further, the wiring board arranged so as to surround the translucent member can prevent external light from entering from the side of the translucent member. Further, when the light-transmitting member is bonded to the semiconductor element with the ultraviolet-curable resin, the ultraviolet-curable resin can be cured immediately after application,
It is possible to prevent the semiconductor element from entering the light receiving portion. Therefore, it is possible to prevent the ultraviolet curable resin from entering the light receiving portion area of the semiconductor element and to deteriorate the light receiving characteristic, and it is not necessary to prepare and arrange a separate frame or the like for bonding the translucent member. Therefore, it can be manufactured at low cost, and the workability of assembling is improved.

In the present invention, preferably, the distance between the lower surface of the translucent member and the opening of the through hole on the lower surface side of the wiring substrate is set to 0.01 to 2 mm, so that the semiconductor device can be moved downward. Even if the light-transmitting member is placed on another transparent substrate or various devices in the state of facing the light-transmitting member, the lower surface of the light-transmitting member is arranged so as not to reach the lower end of the through hole of the wiring board, so that the light-transmitting member is scratched And adhesion of foreign matter can be prevented.

[Brief description of the drawings]

1A and 1B are a cross-sectional view and a bottom view of a semiconductor device of the present invention.

[Explanation of symbols]

 1: semiconductor element 2: light receiving part 3: translucent member 4: ultraviolet curable resin 5: electrode 6: conductive bump 7: wiring board

Claims (2)

[Claims] A semiconductor device having a light receiving portion provided in a central region of a lower surface and an electrode formed in a peripheral region of the lower surface;
A light-transmitting member having an outer dimension larger than the light-receiving portion and smaller than the lower surface of the semiconductor element; and a through-hole having an opening dimension larger than the light-transmitting member and smaller than the lower surface of the semiconductor element; And a wiring substrate provided with electrode pads corresponding to the electrodes around the through hole. The light transmitting member is attached to the lower surface of the semiconductor element so as to cover the light receiving portion. And inserting the translucent member into the through-hole and connecting the electrode of the semiconductor element and the electrode pad of the wiring board with a conductive member such that the lower surface thereof is located in the through-hole. Characteristic semiconductor device. 2. The semiconductor device according to claim 1, wherein the distance between the lower surface of the light-transmitting member and the opening of the through hole on the lower surface side of the wiring board is 0.01 to 2 mm.