JP2002026398A - Semiconductor light-emitting equipment - Google Patents
Semiconductor light-emitting equipmentInfo
- Publication number
- JP2002026398A JP2002026398A JP2001167657A JP2001167657A JP2002026398A JP 2002026398 A JP2002026398 A JP 2002026398A JP 2001167657 A JP2001167657 A JP 2001167657A JP 2001167657 A JP2001167657 A JP 2001167657A JP 2002026398 A JP2002026398 A JP 2002026398A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- resin sealing
- light emitting
- sealing body
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体発光装置に
係り、詳細には発光素子から発光された光を波長変換し
て外部に放射する半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device that converts the wavelength of light emitted from a light emitting element and emits the light to the outside.
【０００２】[0002]
【従来の技術】図６に示す従来の半導体発光装置は、一
端に皿状の支持体（ヘッダ）（１）を備えた第１のリー
ド（２）と、一端にリード細線接続部（メタルポスト）
（３）を備えた第２のリード（４）と、ヘッダ（１）に
接着剤によって固着された半導体発光素子（５）と、半
導体発光素子（５）の上面に形成された２つの電極（図
示せず）とメタルポスト（３）等との間を電気的に接続
する２本のリード細線（６）と、半導体発光素子
（５）、リード細線（６）、第１のリード（２）及び第
２のリード（４）の一端側を被覆する樹脂封止体（７）
とを有する。この半導体発光装置の発光色は、半導体発
光素子（５）の固有の発光波長によって決定され、例え
ば、ＧａＡｌＰ系、ＧａＰ系及びＧａＮ系の半導体発光
素子を半導体発光素子（５）に使用すれば発光色は、そ
れぞれ赤色、緑色及び青色となる。また、ＧａＡｓ系の
半導体発光素子を使用すれば赤外発光の半導体発光装置
が得られる。2. Description of the Related Art A conventional semiconductor light emitting device shown in FIG. 6 has a first lead (2) having a dish-shaped support (header) (1) at one end, and a fine lead wire connecting portion (metal post) at one end. )
A second lead (4) having (3), a semiconductor light emitting element (5) fixed to the header (1) with an adhesive, and two electrodes (5) formed on the upper surface of the semiconductor light emitting element (5). (Not shown) and two lead wires (6) for electrically connecting the metal posts (3) and the like, a semiconductor light emitting element (5), a lead wire (6), and a first lead (2). And a resin seal (7) covering one end of the second lead (4)
And The light emission color of this semiconductor light emitting device is determined by the intrinsic light emission wavelength of the semiconductor light emitting element (5). The colors are red, green and blue, respectively. If a GaAs-based semiconductor light-emitting element is used, a semiconductor light-emitting device that emits infrared light can be obtained.
【０００３】[0003]
【発明が解決しようとする課題】ところで、近年では
赤、緑、青の中間色又は白色等の混合色の発光が可能な
半導体発光装置の実現が望まれている。中間色又は混合
色を実現するため、半導体発光素子の発光により励起さ
れて蛍光を発する蛍光体を樹脂封止体（７）中に添加
し、半導体発光素子（５）の光を波長変換して樹脂封止
体（７）の外部に放射する半導体発光装置が提案されて
いる。蛍光体を樹脂封止体（７）中に混合する半導体発
光装置は、光の波長変換によって所望の発光色を得られ
る反面、蛍光体による光散乱によって発光輝度が著しく
低下する欠点があった。そこで、本発明では、高輝度で
所望の発光色が得られる半導体発光装置を提供すること
を目的とする。By the way, in recent years, it has been desired to realize a semiconductor light emitting device capable of emitting light of an intermediate color of red, green, and blue, or a mixed color such as white. In order to realize an intermediate color or a mixed color, a phosphor that emits fluorescence when excited by light emission of the semiconductor light emitting element is added to the resin sealing body (7), and the wavelength of the light of the semiconductor light emitting element (5) is converted into a resin. A semiconductor light emitting device that emits light outside the sealing body (7) has been proposed. The semiconductor light emitting device in which the phosphor is mixed in the resin sealing body (7) can obtain a desired emission color by wavelength conversion of light, but has a disadvantage that light emission luminance is remarkably reduced due to light scattering by the phosphor. Therefore, an object of the present invention is to provide a semiconductor light emitting device that can obtain a desired light emitting color with high luminance.
【０００４】[0004]
【課題を解決するための手段】本発明による半導体発光
装置は、複数のリード（２）（４）と、複数のリード
（２）（４）間に電気的に接続された半導体発光素子
（５）と、複数のリード（２）（４）の一端及び半導体
発光素子（５）を封止する樹脂封止体（７）と、一端に
開口部（９ｃ）が設けられ且つ樹脂封止体（７）に被着
された透光性の蛍光カバー（９）とを備え、半導体発光
素子（５）から照射した光により蛍光カバー（９）内に
含まれる蛍光体を励起し、半導体発光素子（５）から生
ずる光とは異なる波長の光を樹脂封止体（７）の外部に
取り出す。半導体発光素子（５）はＧａＮ系半導体発光
素子であり、樹脂封止体（７）に被着される蛍光カバー
（９）は樹脂封止体（７）と同一の形状の内面を有し、
蛍光体は４３０〜４８０ｎｍの波長によって励起され、
５００〜６００ｎｍに発光ピークを有する。半導体発光
素子（５）から照射した光により樹脂封止体（７）を介
して蛍光カバー（９）中の蛍光体を励起するので、蛍光
カバー（９）によって市販の半導体発光素子（５）から
生ずる光とは異なる波長の光を取り出すことができる。A semiconductor light emitting device according to the present invention comprises a plurality of leads (2) and (4) and a semiconductor light emitting element (5) electrically connected between the plurality of leads (2) and (4). ), A resin sealing body (7) for sealing one end of the plurality of leads (2) and (4) and the semiconductor light emitting element (5), and an opening (9c) provided at one end and the resin sealing body ( 7) a light-transmitting fluorescent cover (9) attached to the semiconductor light-emitting element (5), and the light emitted from the semiconductor light-emitting element (5) excites a fluorescent substance contained in the fluorescent cover (9), so that the semiconductor light-emitting element ( Light having a wavelength different from the light generated from 5) is extracted to the outside of the resin sealing body (7). The semiconductor light emitting device (5) is a GaN-based semiconductor light emitting device, and the fluorescent cover (9) attached to the resin sealing body (7) has an inner surface having the same shape as the resin sealing body (7);
The phosphor is excited by a wavelength of 430-480 nm,
It has an emission peak at 500 to 600 nm. Since the phosphor in the fluorescent cover (9) is excited by the light irradiated from the semiconductor light emitting element (5) through the resin sealing body (7), the fluorescent cover (9) can be used to excite the commercially available semiconductor light emitting element (5). Light of a different wavelength from that of the generated light can be extracted.
【０００５】本発明の実施の形態では、樹脂封止体
（７）に被着された蛍光カバー（９）は弾力性を有し、
樹脂封止体（７）に密着する。樹脂封止体（７）と蛍光
カバー（９）との間に透光性を有する接着剤を充填し
て、樹脂封止体（７）と蛍光カバー（９）との間の空気
層を除去して発光効率を向上してもよい。In an embodiment of the present invention, the fluorescent cover (9) attached to the resin sealing body (7) has elasticity,
It adheres closely to the resin sealing body (7). An adhesive having translucency is filled between the resin sealing body (7) and the fluorescent cover (9) to remove an air layer between the resin sealing body (7) and the fluorescent cover (9). To improve the luminous efficiency.
【０００６】樹脂封止体（７）は、円柱状の封止部（７
ａ）と、封止部（７ａ）の一端側にこれと一体に形成さ
れたほぼ半球状のレンズ部（７ｂ）とを備え、蛍光カバ
ー（９）は、円筒状のカバー本体（９ａ）と、カバー本
体（９ａ）に一体に半球状に形成された球面部（９ｂ）
とを備えている。カバー本体（９ａ）は樹脂封止体
（７）の封止部（７ａ）に合致する形状を有し、球面部
（９ｂ）は樹脂封止体（７）のレンズ部（７ｂ）に合致
する形状を有する。カバー本体（９ａ）及び球面部（９
ｂ）は、それぞれ樹脂封止体（７）の封止部（７ａ）及
びレンズ部（７ｂ）に密着するので、蛍光カバー（９）
が樹脂封止体（７）に密着して装着されるので、装着後
に振動等の外力が蛍光カバー（９）に加えられても蛍光
カバー（９）は樹脂封止体（７）から容易には離脱しな
い。樹脂封止体（７）と蛍光カバー（９）との間の空気
を除去する複数個の小さな孔が蛍光カバー（９）に形成
される。The resin sealing body (7) has a cylindrical sealing portion (7).
a) and a substantially hemispherical lens portion (7b) integrally formed with one end of the sealing portion (7a), and the fluorescent cover (9) includes a cylindrical cover body (9a) , A spherical portion (9b) formed in a hemispherical shape integrally with the cover body (9a)
And The cover body (9a) has a shape matching the sealing portion (7a) of the resin sealing body (7), and the spherical portion (9b) matches the lens portion (7b) of the resin sealing body (7). It has a shape. The cover body (9a) and the spherical portion (9
b) adheres to the sealing portion (7a) and the lens portion (7b) of the resin sealing body (7), respectively, so that the fluorescent cover (9)
Is attached in close contact with the resin sealing body (7), so that even if external force such as vibration is applied to the fluorescent cover (9) after the mounting, the fluorescent cover (9) can be easily separated from the resin sealing body (7). Does not leave. A plurality of small holes for removing air between the resin sealing body (7) and the fluorescent cover (9) are formed in the fluorescent cover (9).
【０００７】チップＬＥＤ（８）により半導体発光装置
を構成し、チップＬＥＤ（８）から照射され且つ蛍光カ
バー（９）内で波長変換された光をライトガイド（１
０）の一端（１０ａ）に受光させ、ライトガイド（１
０）の他端（１０ｂ）又は一方の主面（１０ｃ）から照
射させることにより所望の位置で波長変換された光を取
り出すことができる。A semiconductor light emitting device is constituted by the chip LED (8), and light emitted from the chip LED (8) and wavelength-converted in the fluorescent cover (9) is guided by the light guide (1).
0) at one end (10a) of the light guide (1).
By irradiating the light from the other end (10b) or one main surface (10c) of (0), light whose wavelength has been converted can be extracted at a desired position.
【０００８】[0008]
【発明の実施の形態】以下、発光ダイオードに適用した
本発明による半導体発光装置の実施の形態を図１〜図５
について説明する。図１〜図５では、図６に示す部分と
同一の箇所には同一の符号を付し、説明を省略する。図
１に示すように、本実施の形態による半導体発光装置
は、レンズ形の樹脂封止体（７）を備えたＬＥＤ（半導
体発光ダイオード）（８）と、樹脂封止体（７）を包囲
する蛍光カバー（９）とを備えている。周知のトランス
ファモールド法又はキャスティング法によって形成され
る樹脂封止体（７）は、円柱状の封止部（７ａ）と、封
止部（７ａ）の一端側にこれと一体に形成されたほぼ半
球状のレンズ部（７ｂ）とを有する。樹脂封止体（７）
は光透過性を有する例えばエポキシ系樹脂等を主成分と
し、これにシリカ等から成る散乱剤が混入され、若干の
非発光物質の顔料が添加される場合もある。図２に示す
ＬＥＤ（８）は、図６に示す従来の半導体発光装置と基
本的に同一の構造を備えているが、樹脂封止体（７）に
は蛍光体は添加されない。図２に示すＬＥＤ（８）の半
導体発光素子（５）には、４３０〜４８０ｎｍ付近に発
光ピークを有する青色系発光色を生ずるＧａＮ系の半導
体発光素子が使用される。蛍光カバー（９）は、例えば
樹脂基材中に半導体発光素子（５）の発光によって励起
されて蛍光を発する蛍光体が添加されている。樹脂基材
は透光性のポリエステル樹脂、アクリル樹脂、ウレタ
ン、ナイロン、シリコーン樹脂、塩化ビニル、ポリスチ
ロール、ベークライト、ＣＲ３９（アクリル・グリコー
ル・カーボネート樹脂）等から選択される。ウレタン、
ナイロン、シリコーン樹脂は蛍光カバー（９）にある程
度の弾力性を付与するため、樹脂封止体（７）への装着
が容易である。蛍光体は、光線が照射されたときに、そ
の光線を吸収しながら、その光線の波長とは異なる波長
の可視光線を発射する物質をいう。一般に蛍光体は、基
体、付活体及び融剤よりなる。基体には、亜鉛、カドミ
ウム、マグネシウム、シリコン、イットリウム等の稀土
類元素等の酸化物、硫化物、珪酸塩、バナジン酸塩等が
適し、銅、鉄、ニッケルのそれ等は不適である。付活体
は銀、銅、マンガン、クロム、ユウロビウム、亜鉛、ア
ルミニウム、鉛、リン、砒素、金等で一般に０.００１
％〜数％程度の微量が用いられる。融剤は普通塩化ナト
リウム、塩化カリウム、炭酸マグネシウム、塩化バリウ
ムが使用される。前記無機蛍光体の外、フルオレセイ
ン、エオシン、油類（鉱物油）等の有機蛍光体を使用で
きる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a semiconductor light emitting device according to the present invention applied to a light emitting diode will be described with reference to FIGS.
Will be described. 1 to 5, the same parts as those shown in FIG. 6 are denoted by the same reference numerals, and description thereof will be omitted. As shown in FIG. 1, the semiconductor light emitting device according to the present embodiment surrounds an LED (semiconductor light emitting diode) (8) including a lens-shaped resin sealing body (7) and a resin sealing body (7). And a fluorescent cover (9). A resin sealing body (7) formed by a well-known transfer molding method or a casting method includes a cylindrical sealing portion (7a) and an almost integrally formed one end portion of the sealing portion (7a). And a hemispherical lens portion (7b). Resin sealing body (7)
Is mainly composed of, for example, an epoxy resin having a light transmitting property, a scattering agent made of silica or the like is mixed therein, and a slight amount of a non-luminescent pigment may be added. The LED (8) shown in FIG. 2 has basically the same structure as the conventional semiconductor light emitting device shown in FIG. 6, but no phosphor is added to the resin sealing body (7). As the semiconductor light-emitting element (5) of the LED (8) shown in FIG. 2, a GaN-based semiconductor light-emitting element that emits blue light having a light emission peak near 430 to 480 nm is used. The fluorescent cover (9) includes, for example, a phosphor that emits fluorescence when excited by light emission of the semiconductor light emitting element (5) added to a resin base material. The resin substrate is selected from translucent polyester resin, acrylic resin, urethane, nylon, silicone resin, vinyl chloride, polystyrene, bakelite, CR39 (acryl glycol carbonate resin) and the like. Urethane,
Nylon and silicone resins impart a certain degree of elasticity to the fluorescent cover (9), so that it can be easily mounted on the resin sealing body (7). Phosphor refers to a substance that, when irradiated with light, absorbs the light and emits visible light having a wavelength different from the wavelength of the light. Generally, a phosphor comprises a substrate, an activator and a flux. Oxides of rare earth elements such as zinc, cadmium, magnesium, silicon and yttrium, sulfides, silicates, vanadates and the like are suitable for the substrate, and those of copper, iron and nickel are unsuitable. The activator is silver, copper, manganese, chromium, eurobium, zinc, aluminum, lead, phosphorus, arsenic, gold, etc., generally 0.001.
% To several% is used. As a flux, sodium chloride, potassium chloride, magnesium carbonate and barium chloride are usually used. In addition to the inorganic phosphor, organic phosphors such as fluorescein, eosin, and oils (mineral oil) can be used.
【０００９】図３に示すように、蛍光カバー（９）は、
円筒状のカバー本体（９ａ）と、カバー本体（９ａ）に
一体に半球状に形成された球面部（９ｂ）とを備えてい
る。円筒状カバー本体（９ａ）は樹脂封止体（７）の封
止部（７ａ）に合致する形状を備え、球面部（９ｂ）は
樹脂封止体（７）のレンズ部（７ｂ）に合致する形状を
有する。蛍光カバー（９）の内面（９ｄ）は樹脂封止体
（７）と同一の形状を有し、カバー本体（９ａ）の一端
に設けられた開口部（９ｃ）を通じて、蛍光カバー
（９）を樹脂封止体（７）に装着すると、蛍光カバー
（９）の内面（９ｄ）は樹脂封止体（７）の外面に密着
する。即ち、蛍光カバー（９）のカバー本体（９ａ）と
球面部（９ｂ）はそれぞれ樹脂封止体（７）の封止部
（７ａ）とレンズ部（７ｂ）に密着して装着されるの
で、装着後に振動等の外力が蛍光カバー（９）に加えら
れても蛍光カバー（９）は樹脂封止体（７）から容易に
は離脱しない。As shown in FIG. 3, the fluorescent cover (9) is
The cover body (9a) includes a cylindrical cover body (9a) and a spherical portion (9b) formed in the cover body (9a) into a hemisphere. The cylindrical cover body (9a) has a shape matching the sealing part (7a) of the resin sealing body (7), and the spherical part (9b) matches the lens part (7b) of the resin sealing body (7). It has a shape that The inner surface (9d) of the fluorescent cover (9) has the same shape as the resin sealing body (7), and the fluorescent cover (9) is opened through an opening (9c) provided at one end of the cover body (9a). When attached to the resin sealing body (7), the inner surface (9d) of the fluorescent cover (9) comes into close contact with the outer surface of the resin sealing body (7). That is, since the cover body (9a) and the spherical portion (9b) of the fluorescent cover (9) are attached in close contact with the sealing portion (7a) and the lens portion (7b) of the resin sealing body (7), respectively. Even if external force such as vibration is applied to the fluorescent cover (9) after mounting, the fluorescent cover (9) does not easily come off from the resin sealing body (7).
【００１０】本実施例では、４３０〜４８０ｎｍ付近の
波長によって励起され、５００〜６００ｎｍ付近に発光
ピークを有する発光波長が得られ且つ例えば基体が硫化
亜鉛及び硫化カドミウム、付活体が銅、融剤が塩化バリ
ウム及び塩化カリウムから成る蛍光体を添加する。In this embodiment, an excitation wavelength is obtained at a wavelength of about 430 to 480 nm, an emission wavelength having an emission peak at about 500 to 600 nm is obtained. A phosphor consisting of barium chloride and potassium chloride is added.
【００１１】図１に示す本発明の半導体発光装置では、
４３０〜４８０ｎｍ付近に発光ピークを有する青色発光
のＧａＮ系半導体発光素子を半導体発光素子（５）に使
用して、半導体発光素子（５）から発光した光を樹脂封
止体（７）を介して蛍光カバー（９）中の蛍光体に照射
して、蛍光体を励起する。このため、蛍光カバー（９）
中の蛍光体によって５００〜６００ｎｍ付近に発光ピー
クを有する白色光に波長変換されて蛍光カバー（９）の
外部に取り出すことができる。この場合に、蛍光体は蛍
光カバー（９）に添加され、樹脂封止体（７）中には添
加されないので、樹脂封止体（７）内では蛍光体による
光散乱が生じない。また、十分に肉薄なフィルム状の蛍
光カバー（９）内では蛍光体による光散乱は比較的小さ
い。このため、ヘッダ（１）及び樹脂封止体（７）のレ
ンズ部（７ｂ）の形状等によって所望の光指向性が得ら
れ、波長変換に伴う輝度の低下を最小限に抑制すること
ができる。In the semiconductor light emitting device of the present invention shown in FIG.
A blue light emitting GaN-based semiconductor light emitting device having an emission peak around 430 to 480 nm is used for the semiconductor light emitting device (5), and light emitted from the semiconductor light emitting device (5) is passed through the resin sealing body (7). The fluorescent substance in the fluorescent cover (9) is irradiated to excite the fluorescent substance. Therefore, the fluorescent cover (9)
The wavelength is converted into white light having an emission peak at around 500 to 600 nm by the fluorescent substance therein, and can be taken out of the fluorescent cover (9). In this case, since the phosphor is added to the fluorescent cover (9) and not added to the resin sealing body (7), light scattering by the phosphor does not occur in the resin sealing body (7). Further, light scattering by the phosphor is relatively small in the sufficiently thin film-like fluorescent cover (9). For this reason, desired light directivity can be obtained by the shape of the lens part (7b) of the header (1) and the resin sealing body (7), and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. .
【００１２】蛍光カバー（９）は、蛍光体を含む樹脂の
射出成形により所定の形状に形成した後、樹脂封止体
（７）に被着すると比較的簡単に完成できるが。樹脂封
止体（７）と蛍光カバー（９）との間に空気層の形成を
防止するため、別法として蛍光体を含む樹脂原料を樹脂
封止体（７）に直接噴霧した後、硬化させて蛍光カバー
（９）を形成してもよい。The fluorescent cover (9) can be completed relatively easily by forming it into a predetermined shape by injection molding of a resin containing a fluorescent substance and then attaching it to the resin sealing body (7). Alternatively, in order to prevent the formation of an air layer between the resin sealing body (7) and the fluorescent cover (9), a resin material containing a phosphor is directly sprayed onto the resin sealing body (7) and then cured. Thus, the fluorescent cover (9) may be formed.
【００１３】本実施の形態では下記の作用効果が得られ
る。 <1> 蛍光体は蛍光カバー（９）に添加され、樹脂封止
体（７）中には添加されないので、樹脂封止体（７）内
では蛍光体による光散乱が生じない。 <2> また、十分に肉薄なフィルム状の蛍光カバー
（９）内では蛍光体による光散乱は比較的小さい。この
ため、ヘッダ（１）及び樹脂封止体（７）のレンズ部
（７ｂ）の形状等によって所望の光指向性が得られ、波
長変換に伴う輝度の低下を最小限に抑制することができ
る。 <3> 蛍光カバー（９）によって市販の半導体発光素子
（５）から生ずる光とは異なる波長の光を取り出すこと
ができる。 <4> 蛍光カバー（９）を容易に交換して異なる波長の
光を取り出すことができる。 <5> 複数種の蛍光体を蛍光カバー（９）に混合するこ
とにより所望の混合色又は中間色の光を取り出すことが
できる。 <6> 蛍光カバー（９）が樹脂封止体（７）に密着して
装着されるので、装着後に振動等の外力が蛍光カバー
（９）に加えられても蛍光カバー（９）は樹脂封止体
（７）から容易には離脱しない。 <7> 市販の半導体発光素子（５）に蛍光カバー（９）
を被着できるので、半導体発光装置を安価に製造するこ
とができる。In the present embodiment, the following operation and effect can be obtained. <1> Since the phosphor is added to the fluorescent cover (9) and not added to the resin sealing body (7), light scattering by the phosphor does not occur in the resin sealing body (7). <2> In the sufficiently thin film-like fluorescent cover (9), light scattering by the fluorescent material is relatively small. For this reason, desired light directivity can be obtained by the shape of the lens part (7b) of the header (1) and the resin sealing body (7), and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. . <3> With the fluorescent cover (9), light having a wavelength different from the light generated from the commercially available semiconductor light emitting device (5) can be extracted. <4> Light of different wavelengths can be extracted by easily replacing the fluorescent cover (9). <5> Light of a desired mixed color or intermediate color can be extracted by mixing a plurality of types of phosphors with the fluorescent cover (9). <6> Since the fluorescent cover (9) is attached in close contact with the resin sealing body (7), even if external force such as vibration is applied to the fluorescent cover (9) after mounting, the fluorescent cover (9) is sealed with the resin. It does not easily come off the stop (7). <7> Commercially available semiconductor light emitting device (5) with fluorescent cover (9)
Therefore, the semiconductor light emitting device can be manufactured at low cost.
【００１４】ＬＥＤ（８）の樹脂封止体（７）の中に
も、蛍光カバー（９）中の蛍光体による光変換を補助す
る少量の蛍光体を添加してもよい。但し、樹脂封止体
（７）中に蛍光体を添加すると、発光輝度を低下するの
で実施例のように、蛍光カバー（９）のみに蛍光体を添
加するのが望ましい。蛍光カバー（９）内に蛍光体と共
に蛍光増感剤を混合してもよい。A small amount of a phosphor that assists light conversion by the phosphor in the phosphor cover (9) may be added to the resin sealing body (7) of the LED (8). However, if a phosphor is added to the resin sealing body (7), the emission luminance is reduced. Therefore, it is desirable to add the phosphor only to the phosphor cover (9) as in the embodiment. A fluorescent sensitizer may be mixed together with the fluorescent substance in the fluorescent cover (9).
【００１５】樹脂封止体（７）全体でなく、レンズ部
（７ｂ）のみに蛍光カバー（９）を部分的に被着しても
よい。樹脂封止体（７）と蛍光カバー（９）との間に空
気層が形成されることを防止するため、蛍光カバー
（９）に小さな孔を複数個形成してもよい。この場合、
蛍光体によって波長変換された光と、孔を通じて放出さ
れる発光素子（５）からの光との混合色を観察すること
ができる。樹脂封止体（７）と蛍光カバー（９）との間
に透光性の接着剤を充填して、樹脂封止体（７）と蛍光
カバー（９）との間の空気層を除去して発光効率を向上
してもよい。また、例えば図５に示すように、チップＬ
ＥＤ（８）にも本発明を適用することができる。この場
合、基板（１１）上に印刷形成された配線導体がリード
に相当し、樹脂封止体（７）に蛍光カバー（９）が被着
される。蛍光カバー（９）に対向してグラスファイバー
又は導光板等のライトガイド（１０）が設けられる。ラ
イトガイド（１０）の他端（１０ｂ）又は他方の主面
（１０ｄ）には光反射面が形成される。チップＬＥＤ
（８）から照射され且つ蛍光カバー（９）内で波長変換
された光はライトガイド（１０）の一端（１０ａ）から
ライトガイド（１０）内に受光され、ライトガイド（１
０）の他端（１０ｂ）又は一方の主面（１０ｃ）から照
射される。The fluorescent cover (9) may be partially applied to only the lens portion (7b), not to the entire resin sealing body (7). In order to prevent an air layer from being formed between the resin sealing body (7) and the fluorescent cover (9), a plurality of small holes may be formed in the fluorescent cover (9). in this case,
A mixed color of the light whose wavelength has been converted by the phosphor and the light emitted from the light emitting element (5) emitted through the hole can be observed. A translucent adhesive is filled between the resin sealing body (7) and the fluorescent cover (9) to remove an air layer between the resin sealing body (7) and the fluorescent cover (9). To improve luminous efficiency. For example, as shown in FIG.
The present invention can be applied to the ED (8). In this case, the wiring conductor printed on the substrate (11) corresponds to the lead, and the fluorescent cover (9) is attached to the resin sealing body (7). A light guide (10) such as a glass fiber or a light guide plate is provided to face the fluorescent cover (9). A light reflecting surface is formed on the other end (10b) or the other main surface (10d) of the light guide (10). Chip LED
Light emitted from (8) and wavelength-converted in the fluorescent cover (9) is received into the light guide (10) from one end (10a) of the light guide (10), and is received by the light guide (1).
Irradiation is performed from the other end (10b) or one main surface (10c).
【００１６】[0016]
【発明の効果】前記のように、本発明では、蛍光体は蛍
光カバーに添加され、樹脂封止体中には添加されないの
で、樹脂封止体内では蛍光体による光散乱が生じない。
また、十分に肉薄なフィルム状の蛍光カバー内では蛍光
体による光散乱は比較的小さい。このため、ヘッダ及び
樹脂封止体のレンズ部の形状等によって所望の光指向性
が得られ、波長変換に伴う輝度の低下を最小限に抑制す
ることができる。蛍光カバーを装着し又は交換すること
により容易に異なる波長の光を取り出すことができる。
市販の半導体発光素子に蛍光カバーを被着できるので、
半導体発光装置を安価に製造することができる。また、
複数種の蛍光体を蛍光カバーに混合することにより所望
の混合色又は中間色の光を取り出すことができる。As described above, in the present invention, the fluorescent substance is added to the fluorescent cover and is not added to the resin sealing body, so that light scattering by the fluorescent substance does not occur in the resin sealing body.
In a sufficiently thin film-like fluorescent cover, light scattering by the fluorescent material is relatively small. For this reason, desired light directivity can be obtained by the shape of the lens portion of the header and the resin sealing body, and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. By attaching or replacing the fluorescent cover, light of different wavelengths can be easily extracted.
Since a fluorescent cover can be attached to a commercially available semiconductor light emitting device,
A semiconductor light emitting device can be manufactured at low cost. Also,
By mixing a plurality of types of phosphors with the fluorescent cover, light of a desired mixed color or intermediate color can be extracted.
【図１】 発光ダイオードに適用した本発明による半導
体発光装置の断面図FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to the present invention applied to a light emitting diode.
【図２】 蛍光カバーを除去した本発明による半導体発
光装置の断面図FIG. 2 is a sectional view of a semiconductor light emitting device according to the present invention from which a fluorescent cover has been removed.
【図３】 蛍光カバーの断面図FIG. 3 is a sectional view of a fluorescent cover.
【図４】 蛍光カバーの横断面図FIG. 4 is a cross-sectional view of the fluorescent cover.
【図５】 チップＬＥＤに適用した本発明の他の実施例
を示す断面図FIG. 5 is a cross-sectional view showing another embodiment of the present invention applied to a chip LED.
【図６】 従来の発光ダイオードの断面図FIG. 6 is a sectional view of a conventional light emitting diode.
（１）・・ヘッダ、 （２）・・第１のリード、
（３）・・リード細線接続部、 （４）・・第２のリー
ド、 （５）・・半導体発光素子、 （６）・・リード
細線、 （７）・・樹脂封止体、 （７ａ）・・封止
部、 （７ｂ）・・レンズ部、 （８）・・ＬＥＤ、
（９）・・蛍光カバー、 （９ａ）・・カバー本体、
（９ｂ）・・球面部、 （９ｃ）・・開口部、 （９
ｄ）・・内面、(1) header, (2) first lead,
(3) ··· Lead thin wire connection part, (4) ··· Second lead, (5) ··· Semiconductor light emitting element, (6) ··· Lead thin wire, (7) ··· Resin sealed body, (7a) ..Sealing part, (7b) .. Lens part, (8) .. LED,
(9) · · fluorescent cover, (9a) · · · cover body,
(9b) ··· Spherical part, (9c) ··· Opening part, (9
d) ... inner surface
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 伸幸 埼玉県新座市北野３丁目６番３号 サンケ ン電気株式会社内 (72)発明者 川栄 裕之 埼玉県新座市北野３丁目６番３号 サンケ ン電気株式会社内 Ｆターム(参考） 5F041 AA12 CA40 DA01 DA07 DA18 DA43 DA75 DB01 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Nobuyuki Suzuki, Inventor 3-6-3 Kitano, Niiza City, Saitama Prefecture Inside Sanken Electric Co., Ltd. (72) Hiroyuki Kawaei 3-6-3, Kitano, Niiza City, Saitama Prefecture F term (reference) in Sanken Electric Co., Ltd. 5F041 AA12 CA40 DA01 DA07 DA18 DA43 DA75 DB01
Claims (5)
気的に接続された半導体発光素子と、前記複数のリード
の一端及び前記半導体発光素子を封止する樹脂封止体
と、一端に開口部が設けられ且つ前記樹脂封止体に被着
された透光性の蛍光カバーとを備え、前記半導体発光素
子から照射した光により前記蛍光カバー内に含まれる蛍
光体を励起し、前記半導体発光素子から生ずる光とは異
なる波長の光を前記樹脂封止体の外部に取り出す半導体
発光装置において、 前記半導体発光素子はＧａＮ系半導体発光素子であり、
前記樹脂封止体に被着される前記蛍光カバーは前記樹脂
封止体と同一の形状の内面を有し、前記蛍光体は４３０
〜４８０ｎｍの波長によって励起され、５００〜６００
ｎｍに発光ピークを有することを特徴とする半導体発光
装置。A plurality of leads, a semiconductor light emitting element electrically connected between the plurality of leads, one end of the plurality of leads and a resin sealing body for sealing the semiconductor light emitting element; A light-transmitting fluorescent cover provided with an opening and adhered to the resin sealing body, wherein light emitted from the semiconductor light-emitting element excites a fluorescent substance contained in the fluorescent cover, In a semiconductor light emitting device for extracting light having a wavelength different from light emitted from a light emitting element to the outside of the resin sealing body, the semiconductor light emitting element is a GaN-based semiconductor light emitting element;
The fluorescent cover attached to the resin sealing body has an inner surface having the same shape as the resin sealing body, and
Excited by a wavelength of ~ 480 nm, 500-600
A semiconductor light emitting device having an emission peak at nm.
バーは弾力性を有し、透光性を有する接着剤により前記
樹脂封止体に密着する請求項１に記載の半導体発光装
置。2. The semiconductor light emitting device according to claim 1, wherein the fluorescent cover attached to the resin sealing body has elasticity and adheres tightly to the resin sealing body with a translucent adhesive. .
該封止部の一端側にこれと一体に形成されたほぼ半球状
のレンズ部とを備え、前記蛍光カバーは、円筒状のカバ
ー本体と、該カバー本体に一体に半球状に形成された球
面部とを備え、前記カバー本体は前記樹脂封止体の前記
封止部に合致する形状を有し、前記球面部は前記樹脂封
止体の前記レンズ部に合致する形状を有し、 前記カバー本体及び前記球面部は、それぞれ前記樹脂封
止体の前記封止部及び前記レンズ部に密着する請求項１
に記載の半導体発光装置。3. The resin sealing body includes: a cylindrical sealing portion;
A substantially hemispherical lens portion integrally formed with the sealing portion is provided at one end of the sealing portion. The fluorescent cover has a cylindrical cover body and a spherical surface formed integrally with the cover body. The cover body has a shape matching the sealing portion of the resin sealing body, the spherical portion has a shape matching the lens portion of the resin sealing body, 2. The main body and the spherical portion are in close contact with the sealing portion and the lens portion of the resin sealing body, respectively.
The semiconductor light emitting device according to claim 1.
の空気を除去する複数個の小さな孔が前記蛍光カバーに
形成された請求項１又は２のいずれかに記載の半導体発
光装置。4. The semiconductor light emitting device according to claim 1, wherein a plurality of small holes for removing air between the resin sealing body and the fluorescent cover are formed in the fluorescent cover.
あり、該チップＬＥＤから照射され且つ前記蛍光カバー
内で波長変換された光はライトガイドの一端に受光さ
れ、該ライトガイドの他端又は一方の主面から照射され
る請求項１に記載の半導体発光装置。5. The semiconductor light emitting device is a chip LED, and light emitted from the chip LED and wavelength-converted in the fluorescent cover is received at one end of a light guide, and the other end or one of the light guide is provided. The semiconductor light emitting device according to claim 1, wherein the light is emitted from a main surface of the semiconductor light emitting device.
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|---|---|---|---|
| JP2001167657A JP3715903B2 (en) | 2001-06-04 | 2001-06-04 | Semiconductor light emitting device |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00480397A Division JP3434658B2 (en) | 1997-01-14 | 1997-01-14 | Semiconductor light emitting device |
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| Publication Number | Publication Date |
|---|---|
| JP2002026398A true JP2002026398A (en) | 2002-01-25 |
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ID=19010014
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