JP2002025976A - Semiconductor device processing method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a discharge plasma processing method capable of realizing a stable discharge state under an atmospheric pressure using a simple device, and carrying out processing with a small amount of processing gas in a peeling process in a semiconductor manufacturing process. SOLUTION: This plasma processing method is used in a peeling process in a semiconductor manufacturing process, where a solid dielectric body is installed on the surface of one of a pair of electrodes in an atmosphere of, at least, one of an oxygen-containing gas, halogen gas, or rare gas or a mixed gas of them, a pulsed electric field is applied between the electrodes to generate discharge plasma, and a work as an object of processing is etched by the plasma.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to dry etching of an object to be processed using a high-density plasma using a processing gas by a discharge plasma utilizing a pulsed electric field near atmospheric pressure in a separation step in a semiconductor manufacturing process. A method and an apparatus therefor.

[0002]

2. Description of the Related Art As a method for treating a surface of a solid such as plastic, a dry process for generating a glow discharge plasma at a pressure of 1.333 to 1.333 × 10 ⁴ Pa is widely known. In this method, the pressure is 1.3
When the pressure exceeds 33 × 10 ⁴ Pa, the discharge is localized and shifts to an arc discharge, which makes it difficult to apply to a plastic substrate having poor heat resistance.
It is necessary to perform the treatment under a low pressure of ⁴ Pa.

[0003] Since the above-mentioned surface treatment method requires treatment at a low pressure, a vacuum chamber, a vacuum evacuation device, and the like must be provided, and the surface treatment device becomes expensive. In the case of processing an area substrate, a large-capacity vacuum vessel and a large-output evacuation device are required, so that the surface treatment device becomes more expensive.
In addition, when performing surface treatment on a plastic substrate having high water absorption, it takes a long time to evacuate the plastic substrate.

Japanese Patent Publication No. 2-48626 discloses a method of forming a thin film using a thin wire electrode. This thin film forming method is to mix an inert gas such as helium, a fluorine-containing gas, and a monomer gas and supply the mixed gas to a glow discharge plasma region near the substrate from a porous tube having a plurality of apertures, thereby forming a thin film on the substrate. Is formed.

In this thin film manufacturing method, glow discharge plasma is generated at atmospheric pressure, so that the cost of equipment and facilities can be reduced, and a large area substrate can be processed. But,
In this thin film manufacturing method, a flat electrode or a curved electrode is used in the inside of the processing container, so that the apparatus can be further simplified. However, at present, since the size and shape of the base material are restricted, it is not easy to perform surface treatment at an arbitrary position.

[0006] Japanese Patent Application Laid-Open No. Hei 5-275193 discloses that a mixed gas composed of a rare gas and a processing gas is maintained in a unidirectional flow state between electrodes provided with a solid dielectric and discharge plasma is generated. An apparatus for treating a substrate surface to be generated is disclosed.
However, since this surface treatment apparatus is an apparatus that generates discharge plasma in an open-system atmospheric pressure state, in the case where a desired surface treatment is performed by eliminating the influence of the outside air and bringing the discharge plasma into contact with the substrate surface. It is necessary to flow the mixed gas at a high speed, and it is necessary to keep flowing a large flow of gas, which is not a satisfactory surface treatment apparatus.

By the way, in the semiconductor manufacturing process, processing has conventionally been performed by forming plasma in a vacuum. That is, in general, in a dry etching method using plasma, plasma is generated using a chemically stable and safe gas such as CF ₄ to generate excited active species such as fluorine ions and fluorine radicals. Reacts with the object to produce a volatile gas (SiF _{4 in} the case of silicon),
Etching is performed by evaporating and exhausting. Further, in so-called ashing (ashing) such as peeling of a resist unnecessary in the process, and cleaning of organic substances on the soldering surface immediately before bonding, decomposition of organic substances using oxygen plasma or dilution of argon plasma or the like is performed. Means such as separation by high-density plasma using gas are used.

In the conventional plasma generation method, a vacuum apparatus is indispensable because plasma is formed in a vacuum, and a technique for transferring an object to be processed into a processing space is complicated, and the plasma processing apparatus is large and expensive. . Therefore, the quantity that can be processed in a unit time is limited, and the productivity is low. There is a problem that the processing cost becomes expensive.

As a means for solving this problem, dry etching using atmospheric pressure plasma using helium has been conventionally performed. However, helium gas has a very small amount in nature and is expensive. Also, for stable discharge, it is necessary to use helium at a high rate, so that the addition rate of the halogen-based gas required for the reaction is small and sufficient etching efficiency is not obtained.
Japanese Patent Application Laid-Open No. 11-16696 proposes a method of reducing the usage of helium by using a preliminary discharge. However, the introduction of pre-discharged gas can lower the discharge starting pressure under atmospheric pressure and reduce the proportion of helium used.However, the structure of the pre-discharge part becomes complicated, An operation method such as migration was required.

[0010]

SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to realize a stable discharge state under atmospheric pressure conditions in a peeling step in a semiconductor manufacturing process, and to use a simple apparatus and a small amount of processing. Provided is a method and an apparatus for performing dry etching by using discharge plasma treatment capable of being treated with a use gas.

[0011]

Means for Solving the Problems The present inventor has made intensive studies to solve the above-mentioned problems, and as a result, a dry plasma etching method capable of realizing a stable discharge state under atmospheric pressure conditions has been carried out easily. And found that the present invention was completed.

That is, a first aspect of the present invention (the first aspect of the present invention) is a plasma processing method used in a peeling step in a semiconductor manufacturing process, wherein an oxygen-containing gas, a halogen-based gas, a rare gas Discharge plasma generated by placing a solid dielectric on at least one surface of a pair of electrodes and applying a pulsed electric field between the pair of electrodes in an atmosphere of at least one of gases or a mixed gas thereof. And etching the object to be processed.

The second aspect of the present invention (the invention of claim 2)
In the first aspect, the solid dielectric is a container having a large number of gas blowing holes.

The third aspect of the present invention (the invention of claim 3)
A solid-state dielectric is a method for processing a semiconductor device according to the first invention, wherein the solid dielectric is a gun-type container.

A fourth aspect of the present invention (the invention of claim 4)
The method according to any one of claims 1 to 3, wherein the halogen-based gas is a fluorine-based gas, and the discharge plasma is a reactive plasma derived from fluorine. .

A fifth aspect of the present invention (the invention of claim 5).
The method according to any one of the first to third inventions, wherein the halogen-based gas is a chlorine-based gas, and the discharge plasma is a reactive plasma derived from chlorine. .

The sixth aspect of the present invention (the invention of claim 6)
Means that the rise time and fall time are 40 ns to 1
00 μs, electric field strength by positive potential is 0 to 50 kV / c
m. A method for processing a semiconductor device according to any one of the first to fifth inventions, wherein a pulsed electric field having an electric field strength of 0 to 50 kV / cm due to a negative potential is applied.

The seventh aspect of the present invention (the seventh aspect of the present invention).
Has one electrode provided with a solid dielectric container provided with a gas outlet, and another electrode provided opposite the gas outlet, and supplies a processing gas from the gas outlet. It is configured to discharge continuously, the rise time and the fall time are between 40 ns and 100 μs between the one electrode and the other electrode, and the electric field intensity due to the positive potential is 50 kV / cm or less, A discharge plasma processing apparatus for processing a semiconductor element, wherein a pulsed electric field having an electric field intensity of 50 kV / cm or less due to a potential is applied.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a plasma processing method used in various peeling steps such as etching, ashing, and substrate cleaning in a semiconductor manufacturing process by atmospheric pressure discharge plasma processing. Under pressure, in a processing gas atmosphere, a solid dielectric is placed on at least one facing surface of a pair of electrodes, and a silicon substrate is formed by a discharge plasma generated by applying a pulsed electric field between the pair of electrodes. And the like.

Hereinafter, a discharge plasma processing method and apparatus according to the present invention will be described with reference to the drawings. Figure 1
1 is a diagram showing a cross section of an example of a discharge plasma processing apparatus of the present invention. In the figure, 1 indicates a power supply. 2 represents one electrode. 3 represents another electrode. Reference numeral 4 denotes a solid dielectric container. 5 represents a substrate to be treated. Reference numeral 6 denotes a gas inlet for introducing a processing gas into the solid dielectric container. 7 denotes a gas outlet. Reference numeral 8 denotes a jig for connecting one electrode to another electrode.

In the present invention, a discharge plasma is generated inside the solid dielectric container 4 by applying an electric field between the electrodes 2 and 3 while the processing gas is introduced into the solid dielectric container 4. Let it. The gas inside the solid dielectric container 4 is blown out from the gas blowout port 7 toward the base material 5,
The components of the processing gas excited into the plasma state come into contact with the surface of the substrate 5 to be processed, thereby modifying the surface of the substrate. Therefore, by changing the relative position between the solid dielectric container 4 and the substrate 5 to be processed, the processing position of the substrate can be changed. Processing and partial designation processing can be performed.

The power source 1 is preferably one capable of applying a pulse electric field having a rise time and a fall time of 40 ns to 100 μs and an electric field strength of 0 to 50 kV / cm. By applying a pulse electric field having a rise time and a fall time within the above ranges and an electric field intensity, a stable discharge state can be realized under conditions near atmospheric pressure. Details of such a pulse electric field and a power supply will be described later.

The shapes of the one electrode 2 and the other electrode 3 are not particularly limited.
A curved surface type shape such as a spherical pair type is exemplified. The one electrode 2 and the other electrode 3 may be made of, for example, a multi-component metal such as stainless steel or brass, or may be made of a pure metal such as copper or aluminum.

The electrode for generating plasma only needs to have a solid dielectric disposed on at least one of the pair.
The pair of electrodes may be opposed to each other with an appropriate distance to avoid short circuit, or may be orthogonal. As means for irradiating the plasma to the object, there are a method of arranging the object in the plasma generated between the opposing electrodes, and a method of arranging the plasma generated in the container by gas flow, electric field arrangement, or magnetic action. There is a method of blowing out toward a processing object.

The distance from the center of the one electrode to the inside of the solid dielectric container 4 and the center of the gas outlet 7 to the other electrode 3 depends on the thickness and material of the solid dielectric container 4. The thickness is appropriately determined depending on the thickness and the material of the substrate 5 and the magnitude of the applied voltage, but is preferably 0.5 to 30 mm. 30m
When m exceeds m, a high voltage is required, the discharge state easily shifts to arc discharge, and uniform surface treatment becomes difficult.

The shape of the solid dielectric container 4 used in the present invention is not particularly limited, and examples thereof include a square, a cylinder, and a sphere.

Examples of the material of the solid dielectric container 4 include plastics such as polytetrafluoroethylene and polyethylene terephthalate, glass, metal oxides such as silicon dioxide, aluminum oxide, zirconium dioxide and titanium dioxide, and composite materials such as barium titanate. Oxides and the like.

In particular, the relative dielectric constant under an environment of 25 ° C. is 1
The use of a solid dielectric material having a value of 0 or more can generate a high-density discharge plasma at a low voltage, thereby improving the processing efficiency. The upper limit of the relative dielectric constant is not particularly limited, but about 18,500 of actual materials are available and can be used in the present invention. Particularly preferred is a solid dielectric having a relative dielectric constant of 10 to 100. Dielectric constant is 1
Specific examples of the solid dielectric having 0 or more include metal oxides such as zirconium dioxide and titanium dioxide and double oxides such as barium titanate.

Titanate compounds are known as ferroelectrics. Different dielectric constant by the crystal structure, TiO ₂
It has a relative dielectric constant of about 80 in a single rutile crystal structure. B
a, Sr, Pb, Ca, Mg, oxides of metals such as Zr and In the compounds of the TiO ₂ dielectric constant of about 2,000～1
8,500, which can be changed depending on purity and crystallinity.

On the other hand, in the case of TiO ₂ alone, the composition of the TiO ₂ is drastically changed due to heating, so that the use environment is limited. Unless a special film forming method is used, a film having an appropriate specific resistance cannot be obtained, and the discharge state is reduced. There are problems such as instability.
Therefore it is better to use contain a Al ₂ O ₃ than TiO ₂ alone. A mixture of TiO ₂ and Al ₂ O ₃ is thermally practically stable and is therefore suitable for practical use. Preferably, 5 to 50% by weight of titanium oxide and 50 to 95% of aluminum oxide
It is a metal oxide coating mixed in weight%. If the proportion of aluminum oxide is less than 50% by weight, arc discharge is likely to occur, and if it exceeds 95% by weight, a high applied voltage is required to generate discharge plasma. Such a film has a relative dielectric constant of about 10 to 14 and a specific resistance of about 10 ¹⁰ and is suitable as a material for the solid dielectric container of the present invention.

When zirconium oxide alone is used, it has a relative dielectric constant of about 12, which is advantageous for generating discharge plasma at a low voltage. Normally, zirconium oxide is composed of 30 parts of yttrium oxide (Y ₂ O ₃ ), calcium carbonate (CaCO ₃ ), magnesium oxide (MgO) or the like.
The addition is performed in an amount of not more than% by weight to prevent expansion and shrinkage due to crystal transformation, thereby stabilizing it. These can be used in the present invention. The relative permittivity is determined by the type of the additive and the crystallinity of the metal oxide. In the present invention, those containing at least 70% by weight of zirconium oxide are preferred. For example, a zirconium oxide coating containing 4 to 20% by weight of yttrium oxide has a relative dielectric constant of 8 to 1%.
It is about 6, which is suitable as the solid dielectric of the present invention.

The solid dielectric container 4 has one electrode 2 provided thereon. 2 and 3 are diagrams illustrating an example of the arrangement of one electrode and the solid dielectric container. When the solid dielectric container 4 is rectangular, one electrode 2 may be provided on a surface other than the surface on which the gas outlet 7 is provided. The thickness of the surface of the solid dielectric container 4 on which one electrode 2 is disposed is preferably 0.03 to 30 mm. If it is less than 0.03 mm, dielectric breakdown may occur when a high voltage is applied, and arc discharge may occur.

The solid dielectric container 4 has a gas inlet 6 and a gas outlet 7. The shape of the gas outlet 7 is not particularly limited, and examples thereof include a slit shape, a shape having a large number of holes, and a protruding shape formed by a solid dielectric container. 4, 5, and 6
FIG. 4 is a view showing an example of the gas outlet 7. Among these, a container having a large number of gas blowing holes and a gun-type container are preferable. Further, the solid dielectric container of the present invention may have a gas storage capability in addition to the form having the gas inlet shown in FIG. 1.

The jig 8 shown in FIG. 1 can change the distance between the other electrode 3 and the gas outlet 7 freely. With the jig 8, for example, when the substrate 5 is a large-area sheet-like material, the surface treatment can be performed by continuously moving the other electrode 3 and the gas outlet 7 while keeping the distance constant. In the case where the base material 5 is a molded body, a continuous surface treatment, a partial surface treatment, or the like can be performed by freely changing the interval between the other electrode 3 and the gas outlet 7. However,
If the distance between the gas outlet 7 and the substrate 5 is too long,
Care must be taken because the probability of contact with air increases and the processing efficiency decreases.

In the present invention, the processing using the discharge plasma apparatus is performed in a processing method in a semiconductor peeling step, that is, dry etching of a silicon substrate, cleaning of organic contaminants and the like existing on the surface of an object to be processed, and removal of a resist. It can be used for treatments such as peeling, improvement in adhesion of organic films, reduction of metal oxides, and surface modification.

In the etching treatment of the silicon wafer or the like of the present invention, at least one of oxygen-containing gas, halogen-based gas, rare gas, or a mixed gas thereof is used.

The halogen-based gas as the processing gas may be basically any gas as long as it separates halogen in plasma. In particular,
There are chlorine gas, bromine gas, fluorine gas, etc., and also includes halogen compound gas containing halogen and carbon or halogen and hydrogen. Examples of the halogen compound gas include CF ₄ , CCl ₃ F ₃ , SF ₆ , and HCl. These may be diluted with a general-purpose gas such as Ar, N ₂ , O ₂ or air. The main effect is that etching occurs due to a halogen-based gas, but a reactive gas such as oxygen may act directly or catalytically on the etching to enhance the effect.

For a process for decomposing organic substances such as ashing, oxygen plasma may be used.
The gas source for generating the oxygen plasma may be any oxygen-containing gas, such as oxygen, ozone, air, water vapor, carbon monoxide, carbon dioxide, and alcohol.

In addition, plasma treatment can be applied to the removal of contamination such as organic substances or residue such as scum on the circuit board during the process. In such plasma cleaning and plasma descum, in addition to reactive plasma such as halogen-based plasma and oxygen plasma, separation by rare gas plasma having a large collision energy such as argon plasma is also possible.

The rare gas used here includes helium, argon, neon, xenon and the like. However, it is preferable to use relatively inexpensive argon and neon because rare gas is expensive.

In addition, when performing reduction such as removal of a natural oxide film, hydrogen gas is introduced into a processing gas from which oxygen is excluded. Regarding the introduction of hydrogen gas, in view of safety, it is preferable to dilute with an inert gas having a low reactivity to an object such as a rare gas.

The above processing gases may be used alone or in combination depending on the purpose and effect. The mixing ratio between the processing gas and the inert gas is appropriately determined depending on the type of the gas used. When a pulsed electric field is applied, processing can be performed in an atmosphere with an arbitrary mixing ratio.
The mixing ratio may be determined from the viewpoint of economy and safety.
In the case where a pulsed electric field is not used, if the concentration of the processing gas is too high, it is difficult to generate discharge plasma, so that the concentration of the processing gas is 0% in the mixed gas of the processing gas and the inert gas. It is preferably 0.01 to 10% by volume, and more preferably 0.1 to 5% by volume.

In the present invention, the processing gas is continuously discharged from the gas outlet 7 provided in the solid dielectric container 4. When using a plurality of types of processing gas in combination or when diluting a processing gas with an inert gas,
In the apparatus shown in FIG. 1, respective gases are mixed through a general gas flow controller not shown in the figure, and supplied into the solid dielectric container 4 from a gas inlet 6, and these mixed gases are mixed. The gas is discharged from the gas outlet 7.

The supply amount and the flow rate of the processing gas (when diluted with an inert gas and used, indicate a mixed gas of the processing gas and the inert gas; the same applies hereinafter) and the flow rate of the blow-out gas. It is appropriately determined according to the cross-sectional area, the distance between the substrate 5 and the gas outlet 7, and the like. For example, when the cross-sectional area of the gas outlet 7 is 100 mm ² , the supply amount of the processing gas is preferably 5 SLM, and the flow velocity of the processing gas is 830 mm / sec.
Is preferred. When the supply amount of the processing gas is increased, the flow velocity of the processing gas is increased in proportion thereto, and the time required for the surface treatment is reduced.

The pressure conditions for performing the discharge plasma processing method of the present invention are not particularly limited, and processing under a pressure near atmospheric pressure is possible. The pressure under atmospheric pressure is as follows.
It refers to a pressure of 333 × 10 ^{4 to} 10.664 × 10 ⁴ Pa. Among them, pressure adjustment is easy and the apparatus is simple.
The range is preferably 331 × 10 ^{4 to} 10.39 × 10 ⁴ Pa. The time required for the discharge plasma treatment is appropriately determined depending on the magnitude of the applied voltage, the base material, the mixture of the mixed gas, and the like.

The pulse electric field of the present invention will be described below. FIG. 7 shows an example of the pulse voltage waveform. Waveform (a),
(B) is an impulse waveform, waveform (c) is a pulse waveform, and waveform (d) is a modulation waveform. Although FIG. 7 shows an example in which voltage application is repeated positive and negative, a pulse of a type in which a voltage is applied to either the positive or negative polarity side may be used. Further, a pulse electric field on which a direct current is superimposed may be applied. The waveform of the pulse electric field in the present invention is not limited to the above-mentioned waveforms, and may be modulated using pulses having different pulse shapes, rise times, and frequencies. Such modulation is suitable for performing high-speed continuous surface treatment.

The rise time and fall time of the pulse electric field are preferably 40 ns to 100 μs. 10
If the time exceeds 0 μs, the discharge state easily shifts to an arc and becomes unstable, and it is difficult to realize a stable discharge state. In addition, the shorter the rise time and the fall time, the more efficiently the gas is ionized at the time of plasma generation.
If it is less than ns, it is not practical in equipment. More preferably 50
ns to 5 μs. Here, the rise time refers to the time during which the voltage change is continuously positive, and the fall time refers to the time during which the voltage change is continuously negative.

The electric field strength of the above-mentioned pulse electric field is preferably 50 kV / cm or less at a positive electric field and 50 kV / cm or less at a negative electric potential. 50kV / cm
If it exceeds, arc discharge is likely to occur.

The frequency of the pulse electric field is 1 kHz to 1
Preferably, it is 00 kHz. If it is less than 1 kHz, it takes too much time for the treatment, and if it exceeds 100 kHz, arc discharge is likely to occur. Further, the time during which one pulse electric field is applied is preferably 1 μs to 1000 μs. If it is less than 1 μs, the discharge becomes unstable, and if it exceeds 1000 μs, it tends to shift to arc discharge. More preferably, it is 3 μs to 200 μs. Here, the time during which one pulse electric field is applied is shown in FIG. 7 as an example, but refers to a continuous ON time of one pulse in a pulse electric field composed of repetition of ON and OFF.

FIG. 8 shows a block diagram of a power supply when such a pulsed electric field is applied.

In the atmospheric pressure discharge using the pulse electric field according to the present invention, the discharge can be directly generated between the electrodes under the atmospheric pressure without depending on the kind of gas at all. , High-speed processing can be realized with an atmospheric pressure plasma apparatus and a processing method based on a discharge procedure. Further, processing parameters such as an etching rate can be adjusted by parameters such as a pulse frequency, a voltage, and an electrode interval.

[0052]

EXAMPLES The present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Example 1 In the normal pressure plasma processing apparatus shown in FIG. 9, an upper electrode 2 (electrode area: 10 cm × 20 cm, SUS304) coated with a sprayed film of Al ₂ O ₃ (solid dielectric 4) of 1.5 mm.
) And a lower electrode 3 (electrode area 15 cm × 30 cm, S
A 2 inch (100) silicon wafer 5 was placed on the lower electrode 3 and a normal pressure plasma 9 was generated under the following processing conditions, and the silicon wafer 5 was etched. .

Plasma processing conditions Processing gas: mixed gas of oxygen 0.1 SLM + CF ₄ 0.4 SLM + argon 9.5 SLM Discharge conditions: waveform a, rise / fall time 5 μm
s, output 200W, frequency 10KHz, processing time 20
Seconds: The generated plasma was a uniform discharge with no arc column.

When the surface of the obtained silicon wafer was measured by cross-sectional observation with a scanning electron microscope, the etching depth was 0.2 μm.

Example 2 Using the gun-type normal-pressure plasma apparatus shown in FIG. 10 (side electrode size: 3 cm × 10 cm, plasma emission hole: 1 mm, spacing between installation electrodes from the plasma emission hole: 2 mm), the following processing conditions were used. An inch (100) silicon wafer was etched.

Plasma processing conditions Processing gas: Oxygen 0.1 SLM + CF ₄ 0.4 SLM + Argon 9.5 SLM mixed gas Discharge conditions: Waveform a, rise / fall time 5 μm
s, output 200W, frequency 10KHz, processing time 20
Seconds: The generated plasma was a uniform discharge with no arc column.

When the surface of the irradiated portion of the obtained silicon wafer was measured by cross-sectional observation with a scanning electron microscope,
The etching depth was 0.2 μm.

COMPARATIVE EXAMPLE 1 Using the apparatus shown in FIG. 11, the vessel was closed and evacuated, and the pressure was adjusted to 27 Pa while introducing 100 sccm of a mixed gas consisting of 5% oxygen and 95% CF ₄ as a processing gas. Later, instead of the pulsed electric field, the frequency 12.2
A sinusoidal voltage of KHz was applied, and the surface treatment of the silicon wafer was performed for 5 minutes. When the surface of the obtained silicon wafer was measured by cross-sectional observation with a scanning electron microscope, the etching depth was 0.1 μm.

Comparative Example 2 A silicon wafer was subjected to surface treatment in the same manner as in Comparative Example 1 except that the treatment time was changed to 20 seconds. When the surface of the obtained silicon wafer was measured by a cross-sectional observation with a scanning electron microscope, the etching depth could not be measured.

[0061]

According to the present invention, processing apparatuses such as etching, ashing, and plasma cleaning used in a semiconductor manufacturing process can be realized with a simple apparatus configuration, and processing can be performed in-line and at high speed. . This makes it possible to reduce processing time and cost. In addition, in a gun-type processing apparatus, by scanning a plasma-irradiated portion, etching of a large object to be processed, etching of a local portion, correspondence to a complicated shape, and the like can be performed. It can be developed for various applications.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an example of a discharge plasma processing apparatus of the present invention.

FIG. 2 is an example of an arrangement of a solid dielectric container and one electrode of a discharge plasma processing apparatus.

FIG. 3 is an example of an arrangement of a solid dielectric container and one electrode of a discharge plasma processing apparatus.

FIG. 4 is an example of a gas outlet of a discharge plasma processing apparatus.

FIG. 5 is an example of a gas outlet of a discharge plasma processing apparatus.

FIG. 6 is an example of a gas outlet of a discharge plasma processing apparatus.

FIG. 7 is a diagram of a voltage waveform showing an example of a pulsed electric field according to the present invention.

FIG. 8 is a block diagram of a power supply that generates a pulse electric field.

FIG. 9 is a schematic sectional view showing an example of a discharge plasma processing apparatus used in Example 1.

FIG. 10 is a schematic sectional view showing an example of a discharge plasma processing apparatus used in Example 2.

FIG. 11 is a schematic sectional view showing an example of a discharge plasma processing apparatus used in Comparative Example 1.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Power supply (high-voltage pulse power supply) 2 One electrode 3 Other electrode 4 Solid dielectric container 5 Circuit board 6 Gas inlet 7 Gas outlet 8 Jig 9 Discharge plasma

Claims (7)

[Claims] 1. A plasma processing method used in a stripping step in a semiconductor manufacturing process, wherein a pair of oxygen-containing gas, a halogen-based gas, a rare gas, or a mixed gas atmosphere thereof is formed under a pressure near atmospheric pressure. A solid dielectric is provided on at least one surface of the electrode, and a target object is dry-etched by discharge plasma generated by applying a pulsed electric field between the pair of electrodes. Element processing method. 2. The method according to claim 1, wherein the solid dielectric is a container having a large number of gas blowing holes. 3. The method according to claim 1, wherein the solid dielectric is a gun-shaped container. 4. The method according to claim 1, wherein the halogen-based gas is a fluorine-based gas, and the discharge plasma is a reactive plasma derived from fluorine.
13. The method for processing a semiconductor device according to item 10. 5. The semiconductor device according to claim 1, wherein the halogen-based gas is a chlorine-based gas, and the discharge plasma is a reactive plasma derived from chlorine. Processing method. 6. The rise time and fall time are 4
0 ns to 100 μs, electric field strength by positive potential is 50 kV
The method according to any one of claims 1 to 5, wherein a pulsed electric field having an electric field strength of 50 kV / cm or less and a negative electric field strength of 50 kV / cm or less is applied. 7. An electrode provided with a solid dielectric container provided with a gas outlet and another electrode provided opposite to the gas outlet, and a process is performed from the gas outlet. And a rise time and a fall time between the one electrode and the other electrode are 40 ns to 100 μs, and the electric field intensity due to the positive potential is 50 kV / cm. Hereinafter, a discharge plasma processing apparatus for processing a semiconductor element, wherein a pulsed electric field having an electric field intensity of 50 kV / cm or less due to a negative potential is applied.