JP2002016026A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To protect Cu damascene wiring against erosion. SOLUTION: Slurry contains potassium persulfate as an oxidizing agent, potassium dodecyl benzenesulfonate as an surface-active agent, and silica as abrasive particles and pH controlled to 8 by adding potassium hydroxide, and an unwanted Cu film 5 located outside a wiring groove 3 is removed through a CMP method by the use of the slurry.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device having a mechanical polishing process.

[0002]

2. Description of the Related Art In recent years, with the increase in the speed of LSIs (improvement of the operation speed of elements), circuits between circuits in a chip are connected.
Improvement of RC delay of long-distance wiring (global wiring) has been an issue.

Further, improvement of wiring reliability is also an important improvement item, and has a lower resistance and a higher melting point than Al (ρ: 3 μΩcm, mp: 660 ° C.), which is a wiring material that has been widely used so far. Wiring materials are desired.

[0004] Cu (ρ: 1.8 µΩcm, mp: 1083 ° C) is expected as this type of wiring material. When Cu is used as a wiring material, (1) RIE (Re
active Ion Etching) Difficulty of processing, (2) C
Due to various reasons, for example, it is necessary to surround the four surfaces of the wiring with barrier metal to prevent the diffusion of u, and (3) it is necessary to adopt a dual damascene process to reduce the number of steps. Introduction is mandatory.

However, the conventional Cu-CMP is very difficult to process a wiring having a large wiring cross-sectional area (a wide and deep buried wiring) such as a global wiring. That is, when wiring such as global wiring is formed, the amount of Cu to be removed is large (for example, 600
nm), and large erosion (= dishing + thinning) occurs. As a result, a large loss occurs in the wiring cross-sectional area, and there is a problem that the wiring resistance is increased even if low-resistance Cu is used. As can be seen from this problem, C
One of the biggest problems of u-CMP is how to suppress erosion.

Usually, when performing Cu-CMP, it is difficult to remove Cu only with abrasive particles. Therefore, a complexing agent that forms a complex with Cu and forms a complex insoluble in slurry (insoluble complex), An oxidizing agent that oxidizes the Cu surface is used.

That is, the Cu surface is oxidized with an oxidizing agent to form a Cu oxide which can be easily polished by abrasive particles, and a complexing agent forms a Cu complex (protective film) on the Cu surface with a complexing agent. Prevents excessive oxidation. The complex is insoluble in the slurry. By repeatedly forming such an oxide and a protective film and shaving them with abrasive particles, the polishing of Cu proceeds. For this reason,
The CMP characteristics are often determined by the properties of the protective film.

In general, when designing a protective film for suppressing erosion, it is mainly necessary to (1) increase the load dependency of the polishing rate and (2) reduce the polishing particle concentration dependency of the polishing rate. Slurry development will be conducted focusing on two points.

That is, in the development of the slurry focused on (1), in the case of a structure having irregularities, a convex portion to which a high load is applied is quickly flattened, and a concave portion is formed under a low load and a polishing rate is low.
If the polishing of u is performed, the erosion can be reduced. From the viewpoint of (2), the development of the slurry focuses on any slurry. This is from the viewpoint of preventing the polishing rate of Cu from increasing despite the low load, and preventing the erosion from expanding. Therefore, it is important to control the basic characteristics of (1) and (2).

For example, as a conventional slurry, ammonium persulfate as an oxidizing agent, quinaldic acid as a complexing agent,
Using abrasive particles containing alumina, Cu-CM
When P is performed, the following polishing characteristics are exhibited.

As shown in FIG. 8, the load dependency of the polishing rate is as shown in FIG. 8, and the polishing rate during use is 300 g / cm ² and the polishing rate is 440 nm / min. 353 nm / mi at ²
n, 245 nm / min when the polishing load is 100 g / cm ²
And so on.

On the other hand, as shown in FIG. 9, the dependence of the polishing rate on the particle concentration is 100 nm / min at a particle concentration of 0% and 0.5% under a polishing load of 300 g / cm ^2.
% At 440 nm / min and particle concentration at 1% at 420 nm
/ Min, and the polishing rate is saturated when the particle concentration is 0.1% or more.

When a Cu wiring having a width of, for example, 100 μm is formed by using a slurry having such polishing characteristics, erosion can be suppressed to about 20 nm by just polishing as shown in FIG. When the polish is added to 30% and 60%, the erosion becomes 100nm and 180n respectively.
m. This is at low load (100 g / cm
^{This is because} the polishing rate (245 nm / min) of ² ) is high.

In consideration of a process margin in manufacturing a semiconductor device, it is necessary to control erosion to 50 nm or less with 30% overpolishing. This is a value that is difficult to reach with conventional Cu-CMP.

By the way, as the Al wiring, R
Although a convex wiring formed by IE has been widely used, a damascene wiring formed by CMP is expected in recent years.
The reason is that merely changing from the convex wiring to the damascene wiring can provide the advantages of reducing the number of processes, improving reliability, and improving the yield. Therefore, Al-
On the other hand, establishment of CMP is also desired.

However, Al-CMP has the following problems. First, Al has a problem that corrosion (corrosion) occurs more easily than Cu. Further, Al is C
Since it is softer than u, there is a problem that a scratch (scratch) is easily generated. To establish Al-CMP,
In addition to solving these problems, a technique for suppressing erosion as in Cu-CMP must be developed. That is, it can be said that Al-CMP has a higher technical hurdle than Cu-CMP.

[0017]

As described above, it is difficult to reduce the erosion to a required level when a conventional metal CMP is used to form a damascene wiring, particularly when a global wiring is formed. was there.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a semiconductor device having a CMP process capable of realizing low erosion metal CMP.

[0019]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, typical ones are briefly described as follows. That is, a method for manufacturing a semiconductor device according to the present invention includes the steps of: depositing a conductive film containing a metal as a main component on an insulating film having a groove on the surface so as to fill the groove; A step of removing the conductive film outside the groove by a CMP method using a slurry containing a compound that forms a complex with the metal, a surfactant, and abrasive particles.

With such a configuration, the erosion of the conductive film can be effectively suppressed due to the effect of a surfactant which does not exist in the conventional slurry. Although the detailed mechanism of the erosion suppression effect by the surfactant is not clear, it is considered that the passivation effect on the surface of the conductive film by the surfactant is involved.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0022]

Embodiments of the present invention (hereinafter, referred to as embodiments) will be described below with reference to the drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 9 is a process cross-sectional view illustrating the method of forming the Cu damascene wiring according to the embodiment. The Cu damascene wiring is, for example, DR
It is used for AM and high-speed logic LSI.

First, as shown in FIG. 1A, an SiO ₂ -based interlayer insulating film 2 is deposited on a silicon substrate 1, and then a wiring groove 3 having a depth of 400 nm is formed on the surface of the interlayer insulating film 2. And then a 30 nm thick TaN
A liner film 4 is deposited, a Cu film having a thickness of 50 nm is formed as a seed layer by using a sputtering method, and a Cu film having a thickness of 400 nm is formed as a wiring body by using a plating method.
Is formed, and a Cu film 5 having a total thickness of 450 nm is formed on the TaN liner film 4.

Next, as shown in FIG. 1B, the unnecessary Cu film 5 outside the wiring groove 3 is removed by the CMP method using the slurry for Cu-CMP of the present invention (first polishing). In the present embodiment, unnecessary films such as the Cu film 5 are removed by two-step CMP (first polishing + second polishing). The reason is to reduce erosion as much as possible, and it is also important to stop polishing with the TaN liner film 4 properly in the first polishing.

Here, the slurry for Cu-CMP of the present invention contains potassium persulfate as an oxidizing agent, potassium dodecylbenzenesulfonate as a complexing agent, and silica as abrasive particles, and the slurry is adjusted to potassium hydroxide (pH (Control agent) is used.

The reason for using silica as abrasive particles is that, first, silica is stably dispersed in a slurry solution containing the above slurry components (oxidizing agent, complexing agent, pH adjuster). Second, TaN This is because the polishing force for the liner film 4 is small.

FIGS. 2 and 3 show the dependence of the polishing rate on the polishing load and the concentration of the abrasive particles when the slurry of the present invention is used, respectively. From these figures, it can be seen that the polishing load (= 300 g / c) at the start of use of the Cu-CMP of the present invention is higher than that of the conventional Cu-CMP (FIGS. 8 and 9).
It can be seen that the polishing rate of m ² ) is as low as 50 nm / min, but the polishing rate sharply increases as the polishing load increases, and the dependence of the Cu polishing rate on the abrasive particle concentration is small. It is considered that the reason for such polishing characteristics is due to the passivation effect of potassium dodecylbenzenesulfonate on the Cu surface.

The polishing conditions when the slurry of the present invention is used are, for example, a polishing pad of IC1000, a polishing load (DF) of 300 g / cm ² , a top ring (TR) rotation speed of 100 rpm, and a turntable (TT) rotation. number:
100 rpm.

In this case, since the substrate has irregularities in the initial stage of polishing, the polishing load of the convex portion becomes higher than the set value (300 g / cm ² ). In the present embodiment, the ratio (line & space) between the line width of the Cu wiring and the space width between the Cu wirings is 1, in other words, the wiring pattern density is 50%. Minute area). In this case, it is expected that a polishing load of about 600 g / cm ² is substantially applied. Since the polishing rate at this time is about 300 nm / min, the irregularities on the substrate disappear in a polishing time of about 1 minute.

The remaining Cu film thickness is 150 nm. When the substrate is flat, the polishing load is 300 g / cm ^2, and the polishing rate of Cu is 50 nm / min.
Therefore, if the polishing is performed for three minutes, most of the unnecessary portion of the Cu film 5 can be removed.

However, in this embodiment, the process merge
In anticipation of over-polishing. In this case, the figure
As shown in Fig. 4, although some erosion occurs,
Load on the Cu film 5 of the Cu wiring part during bar polishing
Weight is the set value of 300 g / cm ^TwoSmaller than
Polishing rate is even slower, keeping erosion small
Can be

Also, the polishing rate of the TaN liner film 4 is 1/5 that of the case where potassium dodecylbenzenesulfonate is not contained because of containing potassium dodecylbenzenesulfonate.
(2 nm / min), and the polishing can be stopped firmly by the TaN liner film 4.

Finally, as shown in FIG. 1C, the unnecessary TaN liner film 4 outside the wiring groove 3 and the unnecessary Cu film 4 left by the first polishing are removed by the CMP method (second polishing).

In the second polish, the Cu film 5, Ta
A slurry capable of controlling the polishing rate of each of the N liner film 4 and the interlayer insulating film 2 to 20 nm / min, for example, a slurry containing hydrogen peroxide as an oxidizing agent, quinolinic acid as a complexing agent, and silica as abrasive particles is used.

The polishing conditions when using the above slurry are as follows:
For example, polishing pad: Politex-Pad, DF: 3
00 g / cm ² , TR rotation speed: 50 rpm, TT rotation speed: 50 rpm, polishing time: 60 seconds.

According to the method for forming a Cu damascene wiring of the present embodiment described above, it was confirmed that the erosion of the finished Cu damascene wiring can be made as small as about 30 nm with a wiring width of 100 μm, for example.

(Second Embodiment) Next, a method for forming a Cu damascene wiring according to a second embodiment of the present invention will be described. The Cu damascene wiring is used for, for example, a DRAM or a high-speed logic LSI. The cross-sectional view of the process of the present forming method is the same as that of the first embodiment, and therefore will be described with reference to FIG.

This embodiment differs from the first embodiment in that an interlayer insulating film containing an organic component (organic interlayer insulating film) is used instead of an SiO ₂ -based interlayer insulating film. This kind of interlayer insulating film has lower mechanical strength than an SiO ₂ based interlayer insulating film.

As a result of changing the type of interlayer insulating film used, the slurry used for CMP also differs from that of the first embodiment. Specifically, the first polishing includes ammonium persulfate as an oxidizing agent, quinaldic acid as a complexing agent, potassium dodecylbenzenesulfonate as a surfactant, 85% silica as abrasive particles, and 15% alumina mixed particles. Is adjusted to 8.5 with potassium hydroxide.

Here, the mixed particles consist of fine particles of second abrasive particles (here, alumina) scattered on the surface and inside of the first abrasive particles (here, silica having a primary particle size of 20 nm). One particle. In the case of the present embodiment, the proportions of silicon and alumina constituting one mixed particle are 85% and 15%, respectively. Such mixed particles can be formed by a fumed method.

The reason for using the mixed particles as the abrasive particles is as follows.

In the case of the above slurry pH, the silica is negatively charged, and is compatible with the positively charged Cu film 5. Therefore, if the Cu film 5 and the organic interlayer insulating film 5 coexist as a substrate to be polished at the end of the first polishing in the step of FIG. Erosion increases in the system interlayer insulating film 5.

Therefore, in the present embodiment, silica particles that are positively charged are locally present around the negatively charged silica, and generally neutral mixed particles are used as abrasive particles. System interlayer insulating film 5
It is possible to prevent excessive bleeding, and as a result, erosion in the organic interlayer insulating film 5 can be suppressed.

FIGS. 5 and 6 show the dependency of the Cu polishing rate on the polishing load and the dependency of the Cu polishing rate on the abrasive particle concentration in the CMP of this embodiment using the slurry of the present invention.

As shown in FIG. 5, the Cu-CMP of this embodiment uses a slurry containing ammonium persulfate, so that the Cu polishing rate is higher than that of the first embodiment (FIGS. 2 and 3). However, it can be seen that the polishing rate is sufficiently slow in a polishing load region of DF: 100 g / cm ² or less, which is considered important from the viewpoint of erosion.

Further, a conventional Cu-CMP (FIGS. 8 and 9)
Polishing load at the start of use (= 300 g / c)
It can be seen that the Cu polishing rate of m ² ) is as low as 50 nm / min, but the Cu polishing rate sharply increases as the polishing load increases, and the dependence of the Cu polishing rate on the abrasive particle concentration is small. It is considered that the reason for such polishing characteristics is due to the passivation effect of potassium dodecylbenzenesulfonate on the Cu surface.

FIG. 6 shows that, even if the type of particles in the slurry is changed, the particle concentration increases and the Cu polishing rate does not increase rapidly. Further, the polishing rate of the TaN liner film 4 is 2 nm / mi as in the first embodiment.
It is also known that n is sufficiently low.

The polishing conditions when using the slurry of the present invention are, for example, DF: 300 g / cm ² , TR rotation speed:
100 rpm, TT rotation speed: 100 rpm, polishing time:
150 seconds.

Next, as shown in FIG. 1C, a polishing time was calculated using a silica-based slurry as in the first embodiment.
The second polishing for 60 seconds is performed to remove the unnecessary TaN liner film 4 outside the wiring groove 3 and the unnecessary Cu film 4 left by the first polishing.

According to the above-described method for forming a Cu damascene wiring of the present embodiment, similarly to the first embodiment, the erosion of the finished Cu damascene wiring can be made as small as about 30 nm with a wiring width of 100 μm, for example. It was confirmed. Further, although an organic interlayer insulating film was used, no problems such as scratching and film peeling occurred.

(Third Embodiment) Next, a method of forming a Cu damascene wiring according to a third embodiment of the present invention will be described. The Cu damascene wiring is used for, for example, a DRAM or a high-speed logic LSI. The cross-sectional view of the process of the present forming method is the same as that of the first embodiment, and therefore will be described with reference to FIG.

This embodiment is different from the second embodiment in that the slurry of the present invention is used in the second polishing. Specifically, a slurry containing hydrogen peroxide as an oxidizing agent, quinolinic acid as a complexing agent, potassium dodecylbenzenesulfonate as a surfactant, and composite particles of silica and PMMA as abrasive particles is used. The composite particles are obtained by intentionally adsorbing silica (primary particle diameter: 20 nm) on the surface of PMMA (primary particle diameter: 200 nm) using a functional group or van der Waals force, and integrating PMMA and silica. It is. However, during the CMP, many of the composite particles of PMMA and silica are separated. In addition, colloidal silica is preferably used for facilitating adsorption.

The polishing conditions when the slurry of the present invention is used include, for example, a polishing pad: Politex-Pad,
DF: 300 g / cm2, TR rotation speed: 50 rpm, T
T rotation speed: 50 rpm, polishing time: 40 seconds.

The effect of using the slurry of the present invention at the time of second polishing is as follows. First, the erosion of the Cu film 5 can be suppressed by the passivation effect on the surface of the Cu film 5 by potassium dodecylbenzenesulfonate. In addition, due to the dispersing effect of potassium dodecylbenzenesulfonate, the aggregation of shavings generated during polishing can be suppressed, and the scratches of the Cu film 5 can be suppressed. Third, the organic particles constituting the composite particles, P
The reason is that the damage to the organic interlayer insulating film 2 due to the damage absorption effect of the MMA can be suppressed.

In most cases, the organic interlayer insulating film has hydrophobicity. However, in the case of the present embodiment, the organic interlayer insulating film is hydrophilized by potassium dodecylbenzenesulfonate. Is possible, and as a result, scratches can be suppressed.

(Fourth Embodiment) FIG. 7 shows a fourth embodiment of the present invention.
FIG. 7 is a process cross-sectional view illustrating the method for forming the Al damascene wiring according to the embodiment. The Al damascene wiring is, for example, DR
It is used for AM and high-speed logic LSI.

First, as shown in FIG. 7A, an SiO ₂ -based interlayer insulating film 12 is deposited on a silicon substrate 11, and then a wiring groove 13 having a depth of 300 nm is formed on the surface of the interlayer insulating film 12.
Then, a 15 nm thick Nb liner film 14 and a 600 nm thick Al (Cu content: 0.5 at%) film 15 are formed.
Are successively formed sequentially by a sputtering method, and thereafter, the Al film 15 is subjected to a reflow treatment at 350 ° C. By the sputtering film formation and the reflow treatment of the Al film 15, it is possible to form the Al film 15 having a good buried shape without any voids or steps.

Next, as shown in FIG.
Unnecessary Al film 15 outside is removed by the CMP method using the slurry for Al-CMP of the present invention (first polishing).

Here, the slurry for Al-CMP of the present invention contains ammonium persulfate as an oxidizing agent, quinaldic acid as a complexing agent, potassium dodecylbenzenesulfonate as a surfactant, and alumina as abrasive particles. Use the one controlled to 5. Al
-In the case of CMP, oxides and hydroxides of Al are generated in the slurry during the removal of Al. Such products also occur in the case of Cu-CMP, but in small amounts.

The reason for using potassium dodecylbenzenesulfonate as a surfactant is that, first, potassium dodecylbenzenesulfonate is adsorbed on the substrate to be polished (Al film 15), thereby suppressing erosion and preventing scratches and corrosion. That the reduction of
In addition, potassium dodecylbenzenesulfonate has an effect of increasing the interaction between the slurry component and the polishing pad, and thereby it can be expected that the polishing rate is increased.
Also, the polishing rate of the Nb liner film 15 is 1n due to the effect of potassium dodecylbenzenesulfonate.
m / min, which was sufficiently low.

The polishing conditions when using the slurry of the present invention are, for example, polishing pad: IC1000, DF: 30.
0 g / cm ² , TR rotation speed: 120 rpm, TT rotation speed: 100 rpm, polishing time: 3 minutes.

Finally, as shown in FIG. 7C, the unnecessary TaN liner film 14 outside the wiring groove 3 and the unnecessary Al film 15 left by the first polishing are removed by the first polishing.
Is removed by the same second polish as in the first embodiment. The polishing time is, for example, 100 seconds.

According to the above-described method for forming an Al damascene wiring of the present embodiment, it is possible to suppress the corrosion and scratching that have been difficult with conventional Al-CMP, and to further reduce the erosion of the finished Al damascene wiring by, for example, the wiring width. It was confirmed that a small value of about 50 nm can be obtained at 50 μm. That is, it is possible to form an Al damascene wiring having a high degree of perfection, which has been difficult with conventional Al-CMP.

Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments. For example, the load at the time of polishing and the number of rotations of the top ring and the turntable can be appropriately changed.

The substances that can become abrasive particles include Al, Cu, Si, and C, including those described in the above embodiment.
oxides, carbides or nitrides containing at least one element selected from the group consisting of r, Ce, Ti, C and Fe, or a mixture or mixture of at least two elements selected from the group of elements And inorganic particles composed of crystalline materials.

As the oxidizing agent, in addition to potassium persulfate, ammonium persulfate and hydrogen peroxide, ferric nitrate, ozone, cerium ammonium nitrate and the like can be used.

Compounds that can serve as complexing agents include N-group, SH-group, and NH-group as functional groups inside or outside of aromatic or heterocyclic ring, including those described in the above embodiment.
Those containing at least one of _two groups, a CH ₃ group, a COOH group, an OH group, a NO ₂ group and a Cl group are exemplified.

The metal complex such as Cu formed by the complexing agent is preferably one having insolubility in the slurry, more preferably one having insolubility in the slurry and in water. The reason why it is preferably insoluble in water is that it is easy to wash off in a washing step after CMP.

In the above embodiment, the case where the number of lines and spaces is 1 has been described. However, in an actual process, a plurality of damascene wirings having different wiring widths may be formed in the same layer of the interlayer insulating film. In such a case, if the excess metal film outside the wiring groove is removed by CMP using the slurry of the present invention, variation in erosion can be effectively suppressed. Similar effects can be obtained when a plurality of damascene wiring regions having different wiring densities are formed in the same layer of the interlayer insulating film. In the above embodiment, the case of so-called single damascene wiring has been described. However, the present invention can be applied to dual damascene wiring. Further, the present invention is not limited to the wiring, for example, the metal gate electrode C of a damascene gate type MOS transistor.
It can also be applied to the MP process.

Furthermore, in the above embodiment, the Cu film, the Al
Although the CMP of the film, the TaN film and the Nb film has been described, the films that can be polished include Cu, Al, W, Ti, Mo, Nb, Ta, Ag, and V, including those described in the above embodiment. A single-layer or laminated metal film made of a metal selected from the element group consisting of, or an alloy, a nitride, a boride or an oxide containing at least one element selected from the element group as a main component, can give.

Furthermore, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent features. For example, even if some constituent elements are deleted from all the constituent elements shown in the embodiment, if the effects described in the section of the effect of the invention can be obtained, the structure from which the constituent elements are deleted is the invention. Can be extracted as In addition, various modifications can be made without departing from the scope of the present invention.

[0073]

As described in detail above, according to the present invention, a method of manufacturing a semiconductor device having a CMP step capable of effectively suppressing erosion of a conductive film can be realized by using a slurry to which a surfactant is added. Become like

[Brief description of the drawings]

FIG. 1 is a process cross-sectional view showing a method for forming a Cu damascene wiring according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between a Cu polishing rate and a polishing load when the slurry of the present invention is used.

FIG. 3 is a diagram showing the relationship between the polishing rate of Cu and the concentration of abrasive particles when the slurry of the present invention is used.

FIG. 4 is a diagram showing the relationship between Cu erosion and overpolishing when using the slurry of the present invention.

FIG. 5 is a diagram showing a relationship between a Cu polishing rate and a polishing load when another slurry of the present invention is used.

FIG. 6 is a diagram showing a relationship between a Cu polishing rate and a polishing particle concentration when another slurry of the present invention is used.

FIG. 7 is a process cross-sectional view illustrating a method for forming an Al damascene wiring according to a fourth embodiment of the present invention.

FIG. 8 is a diagram showing a relationship between a Cu polishing rate and a polishing load when a conventional slurry is used.

FIG. 9 is a diagram showing the relationship between the polishing rate of Cu and the concentration of abrasive particles when a conventional slurry is used.

FIG. 10 is a diagram showing the relationship between Cu erosion and overpolishing when using the slurry of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 silicon substrate 2 interlayer insulating film 3 wiring groove 4 TaN liner film 5 Cu film (wiring) 11 silicon substrate 12 interlayer insulating film 13 wiring groove 14 Nb liner film 15 Al film (wiring)

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F033 HH07 HH09 HH11 HH14 HH18 HH19 HH20 HH21 HH32 MM01 MM02 MM12 PP15 PP27 QQ48 QQ50 QQ73 QQ75 RR04 RR21 VV16 VV17 XX01 5F043 AA16 BB16 BB16 DD

Claims (16)

[Claims] 1. A step of depositing a conductive film containing a metal as a main component on an insulating film having a groove on the surface so as to fill the groove, and a compound forming a complex with the metal on the surface of the conductive film. And a step of removing the conductive film outside the groove by a CMP method using a slurry containing a surfactant and abrasive particles. 2. The method according to claim 1, wherein the complex is insoluble in the slurry or insoluble in the slurry and in water. 3. The compound according to claim 1, wherein the compound has a functional group, such as an N group, an SH group, an NH ₂ group, inside or outside an aromatic ring or a heterocyclic ring.
CH ₃ group, COOH group, a method of manufacturing a semiconductor device according to claim 2, characterized in that it comprises at least one OH group, NO ₂ group and Cl groups. 4. The method according to claim 3, wherein the compound is an amine having a carboxyl group. 5. The method according to claim 4, wherein the compound is quinaldic acid. 6. The conductive film is made of Cu, Al, W, Ti, M
a single-layer or multilayer metal film made of a metal selected from the element group consisting of o, Nb, Ta, Ag, and V, or an alloy or nitride containing as a main component at least one element selected from the element group; 2. The method according to claim 1, wherein the film is a film made of a boride or an oxide. 7. The method according to claim 1, wherein the surfactant is an anionic surfactant. 8. The method according to claim 7, wherein the surfactant contains an aromatic ring. 9. The method according to claim 8, wherein the surfactant is an alkylbenzene sulfonic acid. 10. The method according to claim 9, wherein the surfactant is dodecylbenzenesulfonic acid. 11. The method according to claim 1, wherein the slurry further contains an oxidizing agent. 12. The method according to claim 11, wherein said oxidizing agent includes potassium persulfate, ammonium persulfate, hydrogen peroxide, ferric nitrate, ozone, or cerium ammonium nitrate. 13. The polishing particles according to claim 1, wherein the abrasive particles are Al, Cu, Si, C
oxides, carbides or nitrides containing at least one element selected from the group consisting of r, Ce, Ti, C and Fe, or a mixture or a mixture of at least two elements selected from the group of elements 2. The method according to claim 1, wherein the particles are inorganic particles made of a crystalline material. 14. The method according to claim 1, wherein the polishing particles are organic particles. 15. The method of manufacturing a semiconductor device according to claim 1, wherein the polishing particles are composite particles in which inorganic particles and organic particles are integrated. 16. The method according to claim 16, wherein the step of depositing the conductive film is performed after forming a liner film on the insulating film, and the step of removing the conductive film comprises removing the conductive film outside the wiring groove. 2. The method according to claim 1, further comprising the step of stopping when the semiconductor device is exposed.