JP2002009402A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JP2002009402A JP2002009402A JP2000184882A JP2000184882A JP2002009402A JP 2002009402 A JP2002009402 A JP 2002009402A JP 2000184882 A JP2000184882 A JP 2000184882A JP 2000184882 A JP2000184882 A JP 2000184882A JP 2002009402 A JP2002009402 A JP 2002009402A
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- Prior art keywords
- light
- emitting device
- light emitting
- gan
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Lasers (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は発光装置に関し、特
に、光源からの光により蛍光体を励起して、該光源の光
と、蛍光体から発せられる光とからなる可視域の光ある
いは白色光を得る発光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly, to a phosphor in which visible light or white light composed of light from a light source and light emitted from the phosphor is obtained by exciting a phosphor with light from a light source. And a light-emitting device for obtaining
【0002】[0002]
【従来の技術】従来より、可視光発光装置として、励起
光源により蛍光体を励起して可視域の多色の発光や白色
を得る試みがなされている。例えば、特開平5-152609号
では、ステム上に窒化ガリウム系化合物半導体からなる
発光素子が取り付けられており、それを、該発光素子か
らの光により励起されて蛍光を発する蛍光染料あるいは
蛍光顔料等の蛍光体が添加された樹脂モールドで包囲し
てなる発光ダイオードが開示されている。また、特開平
11-199781号では、青色光を発するLEDチップを励起光源
として用い、その波長より長波長の蛍光を発する蛍光染
料あるいは蛍光顔料等の蛍光体を励起する構成の発光装
置が開示されている。2. Description of the Related Art Conventionally, as a visible light emitting device, an attempt has been made to obtain a multi-color emission or white color in the visible region by exciting a phosphor with an excitation light source. For example, in Japanese Patent Application Laid-Open No. 5-152609, a light emitting element made of a gallium nitride-based compound semiconductor is mounted on a stem, and a fluorescent dye or a fluorescent pigment that emits fluorescence when excited by light from the light emitting element is used. A light emitting diode surrounded by a resin mold to which the phosphor described above is added is disclosed. In addition,
Japanese Patent Application No. 11-199781 discloses a light emitting device having a configuration in which an LED chip that emits blue light is used as an excitation light source to excite a fluorescent substance such as a fluorescent dye or a fluorescent pigment that emits fluorescence having a wavelength longer than that wavelength.
【0003】[0003]
【発明が解決しようとする課題】青色光を発するLEDと
して半導体レーザが挙げられる。しかし、410nm帯の半
導体レーザとしては、1998年発行のJpn.J.Appl.Phys.Le
tt.,Vol.37.pp.L1020に、InGaN/GaN/AlGaN-Based laser
Diodes Grown on GaN Substrates with Fundamental T
ransverse Modeが記載されているが、30mW程度の横基
本モード発振しか得られていないため、LEDの電気−光
効率は数%と悪く、輝度が低いという問題がある。A semiconductor laser is an example of an LED that emits blue light. However, as a semiconductor laser of the 410 nm band, Jpn.J.Appl.Phys.Le.
tt., Vol.37.pp.L1020, InGaN / GaN / AlGaN-Based laser
Diodes Grown on GaN Substrates with Fundamental T
Although a ransverse mode is described, since only a transverse fundamental mode oscillation of about 30 mW is obtained, there is a problem that the electro-optical efficiency of the LED is as poor as several percent and the luminance is low.
【0004】一方、照明等に用いられている白色光源と
して、蛍光灯があるが、蛍光灯の寿命は数1000時間
と短い上、水銀等を使用するために環境上良くないとい
う問題がある。また、白熱等も寿命が更に短く、エネル
ギー効率も悪いという問題がある。On the other hand, a fluorescent lamp is a white light source used for lighting or the like. However, the life of the fluorescent lamp is as short as several thousand hours, and there is a problem that the use of mercury or the like is not environmentally friendly. In addition, there is a problem that the life of incandescent and the like is shorter and the energy efficiency is poor.
【0005】上記のように、可視域の光あるい白色光を
得るには、効率、輝度および寿命の点で十分ではなかっ
た。[0005] As described above, in order to obtain light in the visible region or white light, efficiency, brightness and life are not sufficient.
【0006】本発明は上記事情に鑑みて、高効率、高輝
度かつ長寿命の発光装置を提供することを目的とするも
のである。The present invention has been made in view of the above circumstances, and has as its object to provide a light-emitting device with high efficiency, high luminance, and long life.
【0007】[0007]
【課題を解決するための手段】本発明の発光装置は、G
aN系の半導体を活性層とするブロードエリアの発光領
域を有する半導体レーザからなる励起光源と、該励起光
源により励起されて、該励起光源から発せられる光の波
長よりも長波長の蛍光を発する蛍光体とを有することを
特徴とするものである。The light emitting device according to the present invention has a G
an excitation light source including a semiconductor laser having a broad-area emission region having an aN-based semiconductor as an active layer; and a fluorescent light that is excited by the excitation light source and emits fluorescence having a longer wavelength than the wavelength of light emitted from the excitation light source. And a body.
【0008】半導体レーザは、ブロードエリアの発光領
域を1次元状に複数並べてなるものであってもよい。The semiconductor laser may be one in which a plurality of light emitting regions of a broad area are arranged one-dimensionally.
【0009】また、半導体レーザは、ブロードエリアの
発光領域を2次元状に複数並べてなるものであってもよ
い。Further, the semiconductor laser may be one in which a plurality of light emitting regions of a broad area are arranged two-dimensionally.
【0010】蛍光体は、希土類元素で付活されたイット
リウム・アルミニウム・ガーネット系蛍光体であること
が望ましい。The phosphor is preferably an yttrium-aluminum-garnet-based phosphor activated by a rare earth element.
【0011】希土類元素は、Ce、Pr、Dy、Tbお
よびEuからなる群より選ばれる1つ以上であることが
望ましい。The rare earth element is desirably at least one selected from the group consisting of Ce, Pr, Dy, Tb and Eu.
【0012】希土類元素で付活されたイットリウム・ア
ルミニウム・ガーネット系蛍光体のイットリウムの少な
くとも一部が、Lu、Sc、La、GdおよびSmから
なる群より選ばれる1つ以上の元素で置換されていても
よい。[0012] At least a part of the yttrium of the yttrium-aluminum-garnet-based phosphor activated by the rare earth element is substituted with at least one element selected from the group consisting of Lu, Sc, La, Gd and Sm. You may.
【0013】希土類元素で付活されたイットリウム・ア
ルミニウム・ガーネット系蛍光体のアルミニウムの少な
くとも一部が、GaおよびInの少なくとも1つの元素
により置換されていてもよい。[0013] At least a part of the aluminum of the yttrium-aluminum-garnet phosphor activated by the rare earth element may be replaced by at least one element of Ga and In.
【0014】上記「ブロードエリア」とは発振領域幅が
10μm以上であることを示す。The above "broad area" indicates that the oscillation area width is 10 μm or more.
【0015】上記「GaN系」とは、少なくともGa元
素とN元素を含むことを示す。The above-mentioned "GaN-based" indicates that it contains at least Ga element and N element.
【0016】[0016]
【発明の効果】本発明の発光装置によれば、GaN系の
半導体を活性層とするブロードエリアの発光領域を有す
る半導体レーザからなる励起光源と、該励起光源により
励起されて、該励起光源から発せられる光の波長よりも
長波長の蛍光を発する蛍光体とを有する構成であるの
で、高輝度、高効率かつ長寿命な光を得ることができ
る。According to the light emitting device of the present invention, an excitation light source comprising a semiconductor laser having a broad area light emitting region having a GaN-based semiconductor as an active layer, and an excitation light source excited by the excitation light source, Since the light emitting device has a configuration including a phosphor that emits fluorescence having a wavelength longer than the wavelength of the emitted light, light with high luminance, high efficiency, and long life can be obtained.
【0017】半導体レーザが、ブロードエリアの発光領
域を1次元状に複数並べてなるものであることにより、
高い出力の光源を得ることができるので、蛍光体から発
せられる光をさらに高輝度な光を得ることができる。ま
た広範囲の光源として用いることができる。According to the semiconductor laser, a plurality of light emitting areas of a broad area are arranged in a one-dimensional manner.
Since a light source with high output can be obtained, light emitted from the phosphor can be obtained with higher luminance. Further, it can be used as a light source in a wide range.
【0018】あるいは半導体レーザが、ブロードエリア
の発光領域を2次元状に複数並べてなるものであること
により、さらに高い出力および広範囲の光源を得ること
ができるので、蛍光体から発せられる光はさらに高輝度
な光を得ることができる。Alternatively, since the semiconductor laser has a two-dimensional arrangement of a plurality of light emitting regions in a broad area, a higher output and a wider light source can be obtained, so that the light emitted from the phosphor is higher. Bright light can be obtained.
【0019】蛍光体は、希土類元素で付活されたイット
リウム・アルミニウム・ガーネット系蛍光体であること
により、励起光源の青色光と該蛍光体から発せられる黄
色光により可視域の光あるいは白色光を得ることができ
る。Since the phosphor is an yttrium-aluminum-garnet phosphor activated by a rare earth element, the phosphor emits visible light or white light by blue light of an excitation light source and yellow light emitted from the phosphor. Obtainable.
【0020】上記希土類元素は、Ce、Pr、Dy、T
bおよびEuからなる群より選ばれる1つ以上であるこ
とにより、可視域の光あるいは白色光を得ることができ
る。The rare earth elements are Ce, Pr, Dy, T
By using at least one selected from the group consisting of b and Eu, visible light or white light can be obtained.
【0021】上記希土類元素で付活されたイットリウム
・アルミニウム・ガーネット系蛍光体のイットリウムの
少なくとも一部が、Lu、Sc、La、GdおよびSm
からなる群より選ばれる1つ以上の元素で置換されてい
てもよく、可視域の色の光あるいは白色光を得ることが
できる。At least a part of the yttrium of the yttrium-aluminum-garnet phosphor activated by the rare earth element is composed of Lu, Sc, La, Gd and Sm.
And may be substituted with one or more elements selected from the group consisting of, and light in the visible region or white light can be obtained.
【0022】上記希土類元素で付活されたイットリウム
・アルミニウム・ガーネット系蛍光体のアルミニウムの
少なくとも一部が、GaおよびInの少なくとも1つの
元素により置換されていてもよく、可視域の光あるいは
白色光を得ることができる。At least a part of the aluminum of the yttrium-aluminum-garnet phosphor activated by the rare earth element may be replaced by at least one element of Ga and In, and light in the visible region or white light may be used. Can be obtained.
【0023】[0023]
【発明の実施の形態】以下、本発明の実施の形態を図面
を用いて詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【0024】本発明の実施の形態による白色光を得る発
光装置について説明する。その発光装置の励起光源とし
て用いられるブロードエリアの発光領域を有する半導体
レーザの断面図を図1に示し、発光装置の概略構成図を
図2に示す。A light emitting device for obtaining white light according to an embodiment of the present invention will be described. FIG. 1 is a cross-sectional view of a semiconductor laser having a broad-area light emitting region used as an excitation light source of the light emitting device, and FIG. 2 is a schematic configuration diagram of the light emitting device.
【0025】まず、本発明の発光装置の励起光源である
ブロードエリアの発光領域を有する半導体レーザについ
て説明する。First, a semiconductor laser having a broad-area light-emitting region, which is an excitation light source of the light-emitting device of the present invention, will be described.
【0026】図1に示すように、有機金属気相成長法に
よりn−GaN(0001)基板11上に、n−Ga1-z1
Alz1N/GaN超格子クラッド層12(0.05<z1<
1)、nあるいはi−GaN光導波層13、In1-z2Ga
z2N(Siドープ)/In1-z3Ga z3N多重量子井戸活
性層14(0.01<z2<0.05、0.1<z3<0.3)、p−Ga
0.8Al0.2Nキャリアブロッキング層15、nあるいはi
−GaN光導波層16、p−Ga1-z1Alz1N/GaN超
格子クラッド層17、p−GaNコンタクト層18を形成す
る。絶縁膜19を形成し、通常のリソグラフィにより幅5
00μm程度のストライプの領域を除去し、p側電極20
を形成する。その後、基板の研磨を行い、n側電極21を
形成する。へき開により、共振器を形成後、高反射コー
トと低反射コートを行いチップ化して半導体レーザ25を
完成させる。この半導体レーザ25において、発振する波
長帯は440nm帯である。また、発光領域幅が500
μmであるので、得られる出力は10W程度であり、電
気−光効率は8%〜50%である。As shown in FIG. 1, the metalorganic vapor phase epitaxy method
On the n-GaN (0001) substrate 11, n-Ga1-z1
Alz1N / GaN superlattice cladding layer 12 (0.05 <z1 <
1), n or i-GaN optical waveguide layer 13, In1-z2Ga
z2N (Si-doped) / In1-z3Ga z3N multiple quantum well active
Layer 14 (0.01 <z2 <0.05, 0.1 <z3 <0.3), p-Ga
0.8Al0.2N carrier blocking layer 15, n or i
-GaN optical waveguide layer 16, p-Ga1-z1Alz1N / GaN super
Forming a lattice cladding layer 17 and a p-GaN contact layer 18;
You. An insulating film 19 is formed and has a width of 5
A stripe region of about 00 μm is removed, and the p-side electrode 20 is removed.
To form Thereafter, the substrate is polished, and the n-side electrode 21 is
Form. After forming the resonator by cleavage,
And a low-reflection coating to make a chip
Finalize. In this semiconductor laser 25, an oscillating wave
The long band is a 440 nm band. Further, the light emitting region width is 500
μm, the resulting output is about 10 W
The air-light efficiency is between 8% and 50%.
【0027】次に、本実施の形態による発光装置を構成
する蛍光体について説明する。Next, the phosphor constituting the light emitting device according to the present embodiment will be described.
【0028】本実施の形態の発光装置を構成する蛍光体
としては、青色光を効率良く吸収し黄色光が発光可能な
蛍光体としてセリウムで付活されたイットリウム・アル
ミニウム・ガーネット系蛍光体を挙げることができる。As the phosphor constituting the light emitting device of the present embodiment, an yttrium aluminum garnet phosphor activated with cerium is used as a phosphor capable of efficiently absorbing blue light and emitting yellow light. be able to.
【0029】次に本発明の発光装置について図2を参照
して説明する。Next, the light emitting device of the present invention will be described with reference to FIG.
【0030】Cuブロック31に取り付けられた励起光源
としての半導体レーザ25と、セリウムで付活されたイッ
トリウム・アルミニウム・ガーネット系蛍光体32を、図
2に示すように配置する。これにより、半導体レーザ25
からの青色光が効率良く蛍光体32に吸収され、蛍光体32
から黄色光が発せられる。この励起光の青色と蛍光体か
ら発せられる黄色光は互いに補色であるため、混色によ
り白色光を得ることができる。A semiconductor laser 25 as an excitation light source attached to a Cu block 31 and a yttrium-aluminum-garnet-based phosphor 32 activated with cerium are arranged as shown in FIG. Thereby, the semiconductor laser 25
Blue light from the phosphor 32 is efficiently absorbed by the phosphor 32,
Emits yellow light. Since the blue excitation light and the yellow light emitted from the phosphor are complementary colors to each other, white light can be obtained by mixing colors.
【0031】蛍光体は焼結体を用いてもよく、あるい
は、樹脂の中に均一に分散混合させてもよい。樹脂とし
て具体的には、熱可塑性樹脂であるポリアリレート樹
脂、ポリカーボネート(PC)樹脂、ポリエチレンテレ
フタレート(PET)樹脂が好ましい。樹脂中には5wt
%〜50wt%程度にて蛍光体を含有させることが望まし
い。As the phosphor, a sintered body may be used, or the phosphor may be uniformly dispersed and mixed in a resin. Specifically, the resin is preferably a thermoplastic resin such as polyarylate resin, polycarbonate (PC) resin, or polyethylene terephthalate (PET) resin. 5wt in resin
% To about 50% by weight of the phosphor.
【0032】半導体レーザ25はブロードエリアの発光領
域を有する半導体レーザであるため、高出力である。ま
た、電気−光効率は8%〜50%であるので、高効率で
ある。また、さらに、寿命は1万時間以上と長寿命であ
るので、本実施の形態による発光装置は、高輝度、高効
率かつ長寿命の可視域の光あるいは白色光を得ることが
可能である。Since the semiconductor laser 25 is a semiconductor laser having a broad-area light emitting region, it has a high output. Further, since the electric-optical efficiency is 8% to 50%, the efficiency is high. Further, since the lifetime is as long as 10,000 hours or more, the light-emitting device according to this embodiment can obtain visible light or white light with high luminance, high efficiency, and long life.
【0033】上記イットリウム・アルミニウム・ガーネ
ット系蛍光体は、広義に解釈し、イットリウムの一部あ
るいは全部をLu、Sc、La、GdおよびSmからな
る群より選ばれる少なくとも1つの元素で置換されてい
てもよい。また、アルミニウムの一部あるいは全部をG
aおよびInの少なくとも1つで置換されていてもよ
い。より好ましくは、Ce:(Re1-xSmx)3(Aly
Ga1-y)5O12(ただし0≦x<1、0≦y≦1、ReはYお
よびGdのうち少なくとも1つ)である。また、黄色光
を発するには、具体的には、Ce:(Y0.6Gd0.4)3
Al5O12が望ましく、Gdの組成比を増やせば赤色成
分が増え、Gd組成比を減らせば、緑色成分を増やすこ
とが可能である。このように組成を変化させることによ
り発光色を連続的に調節することが可能である。あるい
は、Y、Alの置換量が異なる2種類以上の蛍光体を混
合して用いても可視域の各種の波長の発光を得ることが
可能となる。The yttrium / aluminum / garnet-based phosphor is interpreted in a broad sense, and a part or all of yttrium is replaced with at least one element selected from the group consisting of Lu, Sc, La, Gd and Sm. Is also good. Also, part or all of aluminum is G
It may be substituted with at least one of a and In. More preferably, Ce: (Re 1-x Sm x) 3 (Al y
Ga 1-y ) 5 O 12 (where 0 ≦ x <1, 0 ≦ y ≦ 1, and Re is at least one of Y and Gd). In order to emit yellow light, specifically, Ce: (Y 0.6 Gd 0.4 ) 3
Al 5 O 12 is desirable. If the composition ratio of Gd is increased, the red component increases, and if the composition ratio of Gd is decreased, the green component can be increased. By changing the composition in this way, it is possible to continuously adjust the emission color. Alternatively, even when two or more kinds of phosphors having different substitution amounts of Y and Al are used in combination, light emission of various wavelengths in the visible region can be obtained.
【0034】また、イットリウム・アルミニウム・ガー
ネット系蛍光体は、Ce付活について説明したが、他の
希土類元素(Pr、Dy、Tb、Eu等)を用いてもよ
く、可視域の発光が可能となる。また、これら複数の希
土類元素を含んだ蛍光体を混合させたものを用いてもよ
い。Although the yttrium / aluminum / garnet-based phosphor has been described as being activated with Ce, other rare earth elements (Pr, Dy, Tb, Eu, etc.) may be used, and light emission in the visible region is possible. Become. A mixture of a plurality of phosphors containing a rare earth element may be used.
【0035】また、本実施の形態では、蛍光体はブロッ
ク状のものを用いたが、シート状、柱状あるいは管状等
にして使用することが可能である。Further, in the present embodiment, the phosphor is used in the form of a block, but it can be used in the form of a sheet, a column, or a tube.
【0036】本実施の形態では、励起光源として上記の
ような半導体レーザを用いたが、ブロードエリアの発光
領域を有する半導体レーザとして、図3に示したよう
に、複数のブロードエリアの発光領域43が1次元状に配
列され、幅が例えば10mmのバーレーザーを用いてもよ
い。さらに、図4に示すように、上記のようなバーレー
ザーをスタックした、発光領域53が2次元状に配列され
た、幅が例えば10mmのスタックレーザを用いてもよ
い。このようなレーザを励起光源に用いることでさらに
高輝度化が可能となる。In this embodiment, the above-described semiconductor laser is used as the excitation light source. However, as shown in FIG. 3, the semiconductor laser having a broad-area light-emitting region 43 has a plurality of broad-area light-emitting regions. May be arranged one-dimensionally, and a bar laser having a width of, for example, 10 mm may be used. Further, as shown in FIG. 4, a stack laser in which the light emitting regions 53 are two-dimensionally arranged and the width is, for example, 10 mm may be used. By using such a laser as the excitation light source, higher luminance can be achieved.
【0037】なお、本発明において、ブロードエリアと
は発振領域幅が10μm以上であることをいう。In the present invention, the broad area means that the oscillation area width is 10 μm or more.
【0038】よって、本発明による高効率、高輝度かつ
長寿命の発光装置を、ディスプレイあるいはOA機器等
のバックライトとして、あるいは照明器具等に使用する
ことが可能であり、高性能かつ高信頼性を得ることがで
きる。Therefore, the light-emitting device of the present invention having high efficiency, high luminance and long life can be used as a backlight of a display or an OA device, or a lighting device, and has high performance and high reliability. Can be obtained.
【図1】本発明による発光装置を構成する半導体レーザ
を示す断面図FIG. 1 is a sectional view showing a semiconductor laser constituting a light emitting device according to the present invention.
【図2】本発明による発光装置を示す概略構成図FIG. 2 is a schematic configuration diagram showing a light emitting device according to the present invention.
【図3】励起光源であるバーレーザを示す斜視図FIG. 3 is a perspective view showing a bar laser as an excitation light source.
【図4】励起光源であるスタックレーザを示す斜視図FIG. 4 is a perspective view showing a stacked laser as an excitation light source.
11 n−GaN基板 12 n−Ga1-z1Alz1N/GaN超格子クラッド層 13 nあるいはi−GaN光導波層 14 In1-z2Gaz2N(Siドープ)/In1-z3Ga
z3N多重量子井戸活性層 15 p−Ga0.8Al0.2Nキャリアブロッキング層 16 nあるいはi−GaN光導波層 17 p−Ga1-z1Alz1N/GaN超格子クラッド層 18 p−GaNコンタクト層 19 絶縁膜 20 p側電極 21 n側電極 25 半導体レーザ 31 Cuブロック 32 蛍光体11 n-GaN substrate 12 n-Ga 1 -z 1 Al z1 N / GaN superlattice cladding layer 13 n or i-GaN optical waveguide layer 14 In 1 -z 2 G az 2 N (Si-doped) / In 1 -z 3 Ga
z3 N multiple quantum well active layer 15 p-Ga 0.8 Al 0.2 N carrier blocking layer 16 n or i-GaN optical waveguide layer 17 p-Ga 1-z1 Al z1 N / GaN superlattice cladding layer 18 p-GaN contact layer 19 Insulating film 20 P-side electrode 21 N-side electrode 25 Semiconductor laser 31 Cu block 32 Phosphor
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4H001 CA04 XA08 XA13 XA21 XA31 XA39 XA49 XA57 XA62 XA64 XA71 YA00 YA21 YA39 YA58 YA59 YA65 YA66 5F041 AA04 CA34 CA40 DA46 EE25 5F072 AB01 JJ02 JJ03 JJ04 PP07 RR03 YY20 5F073 AA74 CA07 CB02 EA11 FA14 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 4H001 CA04 XA08 XA13 XA21 XA31 XA39 XA49 XA57 XA62 XA64 XA71 YA00 YA21 YA39 YA58 YA59 YA65 YA66 5F041 AA04 CA34 CA40 DA46 EE25 5F072 AB01 JJ04 A07 FE04 FA14
Claims (7)
ドエリアの発光領域を有する半導体レーザからなる励起
光源と、該励起光源により励起されて、該励起光源から
発せられる光の波長よりも長波長の蛍光を発する蛍光体
とを有することを特徴とする発光装置。1. An excitation light source comprising a semiconductor laser having a broad area light emitting region having a GaN-based semiconductor as an active layer, and a wavelength longer than a wavelength of light excited by the excitation light source and emitted from the excitation light source. And a phosphor that emits fluorescent light.
発光領域を1次元状に複数並べてなるものであることを
特徴とする請求項1記載の発光装置。2. The light-emitting device according to claim 1, wherein the semiconductor laser is formed by arranging a plurality of light-emitting regions in a broad area one-dimensionally.
発光領域を2次元状に複数並べてなるものであることを
特徴とする請求項1記載の発光装置。3. The light-emitting device according to claim 1, wherein the semiconductor laser comprises a plurality of light-emitting regions of a broad area arranged two-dimensionally.
イットリウム・アルミニウム・ガーネット系蛍光体であ
ることを特徴とする請求項1、2または3記載の発光装
置。4. The light emitting device according to claim 1, wherein said phosphor is an yttrium aluminum garnet phosphor activated by a rare earth element.
TbおよびEuからなる群より選ばれる1つ以上である
ことを特徴とする請求項4記載の発光装置。5. The method according to claim 1, wherein the rare earth element is Ce, Pr, Dy,
The light emitting device according to claim 4, wherein the light emitting device is at least one selected from the group consisting of Tb and Eu.
ム・アルミニウム・ガーネット系蛍光体のイットリウム
の少なくとも一部が、Lu、Sc、La、GdおよびS
mからなる群より選ばれる1つ以上の元素で置換されて
いることを特徴とする請求項4または5記載の発光装
置。6. At least a part of yttrium of the yttrium-aluminum-garnet phosphor activated by the rare earth element is composed of Lu, Sc, La, Gd and S.
The light emitting device according to claim 4, wherein the light emitting device is substituted with at least one element selected from the group consisting of m.
ム・アルミニウム・ガーネット系蛍光体のアルミニウム
の少なくとも一部が、GaおよびInの少なくとも1つ
の元素により置換されていることを特徴とする請求項
4、5または6記載の発光装置。7. The yttrium-aluminum-garnet-based phosphor activated by the rare earth element, wherein at least a part of aluminum is replaced by at least one element of Ga and In. 7. The light-emitting device according to 5 or 6.
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JP2000184882A JP2002009402A (en) | 2000-06-20 | 2000-06-20 | Light emitting device |
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Family
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