JP2001513270A5 - - Google Patents

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Publication number
JP2001513270A5
JP2001513270A5 JP1999534701A JP53470199A JP2001513270A5 JP 2001513270 A5 JP2001513270 A5 JP 2001513270A5 JP 1999534701 A JP1999534701 A JP 1999534701A JP 53470199 A JP53470199 A JP 53470199A JP 2001513270 A5 JP2001513270 A5 JP 2001513270A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP1999534701A
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English (en)
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JP2001513270A (ja
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Priority claimed from PCT/IB1998/002060 external-priority patent/WO1999034449A2/en
Publication of JP2001513270A publication Critical patent/JP2001513270A/ja
Publication of JP2001513270A5 publication Critical patent/JP2001513270A5/ja
Withdrawn legal-status Critical Current

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Figure 2001513270
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Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
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Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
Figure 2001513270
JP53470199A 1997-12-24 1998-12-17 改良されたオン状態特性を有する高電圧薄膜トランジスタ及びその製造方法 Withdrawn JP2001513270A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US99804897A 1997-12-24 1997-12-24
US08/998,048 1997-12-24
PCT/IB1998/002060 WO1999034449A2 (en) 1997-12-24 1998-12-17 A high voltage thin film transistor with improved on-state characteristics and method for making same

Publications (2)

Publication Number Publication Date
JP2001513270A JP2001513270A (ja) 2001-08-28
JP2001513270A5 true JP2001513270A5 (ja) 2006-04-13

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ID=25544688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53470199A Withdrawn JP2001513270A (ja) 1997-12-24 1998-12-17 改良されたオン状態特性を有する高電圧薄膜トランジスタ及びその製造方法

Country Status (3)

Country Link
EP (1) EP0965145B1 (ja)
JP (1) JP2001513270A (ja)
WO (1) WO1999034449A2 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310378B1 (en) * 1997-12-24 2001-10-30 Philips Electronics North American Corporation High voltage thin film transistor with improved on-state characteristics and method for making same
US6346451B1 (en) * 1997-12-24 2002-02-12 Philips Electronics North America Corporation Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
US5969387A (en) * 1998-06-19 1999-10-19 Philips Electronics North America Corporation Lateral thin-film SOI devices with graded top oxide and graded drift region
US6221737B1 (en) * 1999-09-30 2001-04-24 Philips Electronics North America Corporation Method of making semiconductor devices with graded top oxide and graded drift region
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6424007B1 (en) 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6468878B1 (en) * 2001-02-27 2002-10-22 Koninklijke Philips Electronics N.V. SOI LDMOS structure with improved switching characteristics
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6555873B2 (en) 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6555883B1 (en) 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
WO2003038905A2 (en) * 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor
US20040262685A1 (en) * 2001-11-01 2004-12-30 Zingg Rene Paul Thin film lateral soi power device
US7595523B2 (en) 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
JP2009239111A (ja) 2008-03-27 2009-10-15 Sanyo Electric Co Ltd 半導体装置
JP5404550B2 (ja) 2010-07-29 2014-02-05 株式会社東芝 半導体装置の製造方法及び半導体装置
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
JP6427388B2 (ja) * 2014-11-04 2018-11-21 エイブリック株式会社 半導体装置
EP3460853A1 (en) * 2017-09-26 2019-03-27 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO High voltage thin-film transistor and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4308549A (en) * 1978-12-18 1981-12-29 Xerox Corporation High voltage field effect transistor
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
DE69209678T2 (de) * 1991-02-01 1996-10-10 Philips Electronics Nv Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung
US5710451A (en) * 1996-04-10 1998-01-20 Philips Electronics North America Corporation High-voltage lateral MOSFET SOI device having a semiconductor linkup region

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