JP2001508239A - Semiconductor wafer cleaning composition and method using aqueous ammonium fluoride and amine - Google Patents
Semiconductor wafer cleaning composition and method using aqueous ammonium fluoride and amineInfo
- Publication number
- JP2001508239A JP2001508239A JP53111898A JP53111898A JP2001508239A JP 2001508239 A JP2001508239 A JP 2001508239A JP 53111898 A JP53111898 A JP 53111898A JP 53111898 A JP53111898 A JP 53111898A JP 2001508239 A JP2001508239 A JP 2001508239A
- Authority
- JP
- Japan
- Prior art keywords
- fluoride
- group
- ammonium
- cleaning formulation
- pmdeta
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 71
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 150000001412 amines Chemical class 0.000 title claims abstract description 36
- 238000004140 cleaning Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims 24
- 238000009472 formulation Methods 0.000 claims abstract description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002738 chelating agent Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000004380 ashing Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 40
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 36
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 34
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 30
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 22
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 20
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 16
- 125000001931 aliphatic group Chemical group 0.000 claims description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 claims description 15
- 229960002447 thiram Drugs 0.000 claims description 15
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 14
- IKGLACJFEHSFNN-UHFFFAOYSA-N hydron;triethylazanium;trifluoride Chemical compound F.F.F.CCN(CC)CC IKGLACJFEHSFNN-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 10
- GSEJCLTVZPLZKY-UHFFFAOYSA-O triethanolammonium Chemical compound OCC[NH+](CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-O 0.000 claims description 10
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 claims description 8
- GCPWJFKTWGFEHH-UHFFFAOYSA-N acetoacetamide Chemical group CC(=O)CC(N)=O GCPWJFKTWGFEHH-UHFFFAOYSA-N 0.000 claims description 8
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 claims description 8
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 8
- LROATHSBUUYETB-UHFFFAOYSA-M tetramethylazanium;2,2,2-trifluoroacetate Chemical compound C[N+](C)(C)C.[O-]C(=O)C(F)(F)F LROATHSBUUYETB-UHFFFAOYSA-M 0.000 claims description 8
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 7
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 7
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 4
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 claims description 4
- BXYVQNNEFZOBOZ-UHFFFAOYSA-N n-[3-(dimethylamino)propyl]-n',n'-dimethylpropane-1,3-diamine Chemical compound CN(C)CCCNCCCN(C)C BXYVQNNEFZOBOZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- VSWDORGPIHIGNW-UHFFFAOYSA-N Pyrrolidine dithiocarbamic acid Chemical compound SC(=S)N1CCCC1 VSWDORGPIHIGNW-UHFFFAOYSA-N 0.000 claims 13
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 6
- ATWLCPHWYPSRBQ-UHFFFAOYSA-N N-Methylacetoacetamide Chemical compound CNC(=O)CC(C)=O ATWLCPHWYPSRBQ-UHFFFAOYSA-N 0.000 claims 6
- LTSORXKZGSXNHL-UHFFFAOYSA-M tetramethylazanium;thiobenzate Chemical compound C[N+](C)(C)C.[O-]C(=S)C1=CC=CC=C1 LTSORXKZGSXNHL-UHFFFAOYSA-M 0.000 claims 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 3
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 125000000524 functional group Chemical group 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical class [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000004706 metal oxides Chemical group 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XDMJOZWFNORXEX-UHFFFAOYSA-N C(N)([S-])=S.[NH4+].N1CCCC1.C(N)([O-])=O.C(CC(=O)C)(=O)N.[NH4+] Chemical compound C(N)([S-])=S.[NH4+].N1CCCC1.C(N)([O-])=O.C(CC(=O)C)(=O)N.[NH4+] XDMJOZWFNORXEX-UHFFFAOYSA-N 0.000 description 1
- XKXNCSSIBIZSRH-UHFFFAOYSA-L CN(C(SSC(N(C)C)=S)=S)C.FC(C(=O)[O-])(F)F.C[N+](C)(C)C.C(C1=CC=CC=C1)(=S)[O-].C[N+](C)(C)C.CC(CC(C)=O)=O.C(CC(=O)C)(=O)NC.C(CC(=O)C)(=O)OC.C(CC(=O)OC)(=O)OC Chemical compound CN(C(SSC(N(C)C)=S)=S)C.FC(C(=O)[O-])(F)F.C[N+](C)(C)C.C(C1=CC=CC=C1)(=S)[O-].C[N+](C)(C)C.CC(CC(C)=O)=O.C(CC(=O)C)(=O)NC.C(CC(=O)C)(=O)OC.C(CC(=O)OC)(=O)OC XKXNCSSIBIZSRH-UHFFFAOYSA-L 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- -1 amine trifluoroacetates Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】 以下に示した重量パーセント範囲で、以下の成分を含有する、プラズマアッシング後の半導体製造で使用する半導体ウエハ洗浄処方物：フッ化アンモニウムおよび/またはそれらの誘導体１〜21％；有機アミンまたは２種のアミンの混合物20〜55％；水23〜50％；金属キレート化剤またはキレート化剤の混合物０〜21％。 (57) [Summary] Semiconductor wafer cleaning formulations for use in semiconductor fabrication after plasma ashing, containing the following components in the weight percent ranges indicated below: 1 to 21% ammonium fluoride and / or derivatives thereof; organic amines or two 20-55% of a mixture of amines; 23-50% of water; 0-21% of a mixture of metal chelators or chelating agents.
Description
【発明の詳細な説明】 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および 方法 発明の背景 発明の分野 本発明は、一般に、半導体ウエハ製造の際に用いる化学処方物に関し、特に、 レジストプラズマアッシング工程に続いて、ウエハから残留物を除去するのに使 用する化学処方物に関する。先行技術の説明 先行技術は、レジストアッシング工程に続いて、残留物を除去しウエハを洗浄 するための種々の化学処方物の使用を教示している。これらの従来技術の化学処 方物のいくつかには、アミンおよび/または水酸化テトラアルキルアンモニウム 、水および/または他の溶媒、およびキレート化剤を含むアルカリ組成物が挙げ られる。さらに他の処方物は、フッ化アンモニウムを含有する酸性から中性の溶 液をベースにしている。種々の従来技術の処方物には欠点があり、これには、金 属層または絶縁層の不要な除去および所望の金属層(特に、アルミニウムおよび アルミニウム-銅合金および窒化チタンの特性)の腐食が含まれる。従って、レジ ストアッシング工程に続いて残留物を効果的に除去する化学処方物であって、ウ エハ上に残ることになる脆い構造を攻撃せずかつ分解するおそれのないものが必 要とされている。 発明の要旨 以下に示した重量パーセント範囲で、以下の成分を含有する、プラズマアッシ ング後の半導体製造で使用する半導体ウエハ洗浄処方物： フッ化アンモニウムおよび/またはそれらの誘導体； １〜21％ 有機アミンまたは２種のアミンの混合物；20〜55％ 水； 23〜50％ 金属キレート化剤またはキレート化剤の混合物 ０〜21％ 本発明の１つの利点は、プラズマアッシング工程に続いて、無機残留物を効果 的に除去することにある。 本発明の他の利点は、プラズマアッシングに続いて、金属ハロゲン化物および 金属酸化物残留物を効果的に除去することにある。 本発明のさらなる利点は、CMP(化学機械研磨)後に残留している酸化アルミニ ウムおよび他の酸化物のスラリー粒子を効果的に除去することにある。 本発明のさらに他の利点は、アミンなしでフッ化アンモニウムを含有する処方 物およびフッ化アンモニウムなしでアミンを含有する処方物よりも低い腐食性を 有する、より良好な剥離性能を提供することにある。 本発明のなおさらなる利点は、従来のアミン含有処方物よりも低い処理温度で 、より良好な剥離性能を提供することにある。 本発明のさらにさらなる利点は、金属腐食を防止し剥離有効性を高めるキレー ト化剤を含有することにある。 本発明のこれらのおよび他の特徴および利点は、好ましい実施態様の以下の詳 細な説明を検討するとすぐに、当業者に理解されるようになる。 好ましい実施熊様の詳細な説明 本発明は、高密度プラズマエッチングに続く酸素含有プラズマを用いたアッシ ングから生じる無機ウエハ残留物を剥離するのに適切な処方物を包含する。これ らの処方物はまた、CMP(化学機械研磨)後に残留している酸化アルミニウムおよ び他の酸化物のスラリー粒子を除去するのに適切である。これらの処方物は、フ ッ化アンモニウムまたはフッ化アンモニウム誘導体、アミンまたはアミン混合物 、水、および必要に応じて、１種以上の金属キレート化剤を含有する。 好ましい処方物は、以下の成分を使用する(パーセントは、重量基準である)： フッ化アンモニウムおよび/またはそれらの誘導体 １〜21％ 有機アミンまたは２種のアミンの混合物 20〜55％ 水 23〜50％ 金属キレート化剤またはキレート化剤の混合物： ０〜21％ 好ましいアミンには、以下がある： ジグリコールアミン(DGA) メチルジエタノールアミン(MDEA) ペンタメチルジエチレントリアミン(PMDETA) トリエタノールアミン(TEA) トリエチレンジアミン(TEDA) 有効な他のアミンには、以下が挙げられる： ヘキサメチレンテトラミン 3,3-イミノビス(N,N-ジメチルプロピルアミン) モノエタノールアミン 好ましいフッ化物源には、以下がある： フッ化アンモニウム フッ化トリエタノールアンモニウム(TEAF) 有効な他のフッ化物源には、以下が挙げられる： フッ化ジグリコールアンモニウム(DGAF) フッ化テトラメチルアンモニウム(TMAF) トリエチルアミントリス(フッ化水素)(TREAT-HF) 有効な金属キレート化剤には、以下が挙げられる： アセトアセトアミド カルバミン酸アンモニウム ピロリジンジチオカルバミン酸アンモニウム(APDC) マロン酸ジメチル アセト酢酸メチル N-メチルアセトアセトアミド 2,4-ペンタンジオン チオ安息香酸テトラメチルアンモニウム トリフルオロ酢酸テトラメチルアンモニウム テトラメチルチウラムジスルフィド(TMTDS) フッ化アンモニウムまたは上で同定した置換フッ化物源とアミン(１％以下の 量で、界面活性剤として以外)との組み合わせは、アミンなしでフッ化アンモニ ウムを含有する処方物およびフッ化アンモニウムなしでアミンを含有する処方物 よりも低い腐食性を有する、より良好な剥離性能を提供する。さらに、得られた アルカリ溶液は、従来のアミン含有処方物よりも低い処理温度(21℃〜40℃)で有 効であった。 キレート化剤としてのおよび金属腐食を防止するための1,3-ジカルボニル化合 物の使用もまた、有効性を高めると思われる。 従来技術では、アミンは、処方物の１％以下に限定されていて、界面活性剤と してのみ働くか、またはアミンは、処方物の成分としては、全く使用されない。 また、この従来技術の処方物は、酸性(pH＜７)である。本発明の処方物では、ア ミンは、主成分として存在し、剥離において主な役割を果たし、処方物は、塩基 性(pH＞７)である。 好ましい処方物のいくつかの代表的な例には、以下がある： トリエタノールアミン 45％ フッ化アンモニウム ５％ 水 50％ ジグリコールアミン 55％ フッ化アンモニウム ５％ 2,4-ペンタンジオン 10％ 水 30％ トリエタノールアミン 27.1％ TEAF 20.3％ 2,4-ペンタンジオン 10％ 水 42.6％ PMDETA 45％ フッ化アンモニウム ５％ アセト酢酸メチル ６％ 水 44％ PMDETA 45％ フッ化アンモニウム １％ 2,4-ペンタンジオン ８％ APDC 15％ 水 31％ PMDETA 55％ フッ化アンモニウム １％ マロン酸ジメチル 13.2％ TMTDS ６％ 水 24.8％ TEA 36％ PMDETA 16％ フッ化アンモニウム 12％ アセトアセトアミド 10％ 水 28％ TEA 45％ フッ化アンモニウム 11.4％ トリフルオロ酢酸テトラメチルアンモニウム 17％ 水 27％ トリエタノールアミン 45〜52％ フッ化アンモニウム ３〜10％ 2,4-ペンタンジオン ５〜10％ 水 35〜44％ PMDETA 38〜45％ フッ化アンモニウム ５％ 2,4-ペンタンジオン 10％ 水 40〜47％ PMDETA 38％ TMAF ５％ フッ化アンモニウム ２％ 2,4-ペンタンジオン 10％ 水 45％ PMDETA 38％ フッ化アンモニウム １％ 2,4-ペンタンジオン 10.7％ カルバミン酸アンモニウム 10％ 水 38.3％ 本発明者らは、密接に関連した成分が、本発明者らの処方物で使用する成分と に匹敵する性能を示すだろうと予想している。 これらには、以下が挙げられる： Ａ．他の有機アミンは、適切であると予想される。 Ｂ．他の置換フッ化アンモニウムは、適切であると予想される。これらは、一 般式R1R2R3R4NFを有し、ここで、このR基は、水素原子および/または脂肪族基で ある。 Ｃ．以下を含む他の金属キレート化剤： １．他の1,3-ジカルボニル化合物は、匹敵する性能を示すと予想される。こ れらは、以下の一般構造を有する： X-CHR-Y、ここで、 Rは、水素原子または脂肪族基のいずれかであり、そして XおよびYは、電子吸引性を有することが知られている複数の結合部分を含む官 能基であり、例えば、XおよびYは、CONH2、CONHR'、CN、NO2、SOR'、SO2Zであり 得、ここで、R'は、アルキル基を表わし、そしてZは、他の原子または基を表わ す。XおよびYは、同一または異なり得る。 ２．他のトリフルオロ酢酸アミンもまた、キレート化剤として、適切である と予想される。これらは、一般式、R1R2R3R4N+-O2CCF3を有し、ここで、このR基 は、水素原子および/または脂肪族基である。 Ｄ．任意の成分(例えば、界面活性剤、安定剤、腐食防止剤、緩衝剤および共 溶媒)の含有はまた、当該分野で実施されたものへの明らかな追加を構成すると 予想される。 本発明の処方物は、塩素またはフッ素含有プラズマを用いたエッチングに続い て酸素プラズマアッシングされるウエハ上で、特に有用である。このタイプの処 理により発生する残留物は、典型的には、無機材料(例えば、酸化アルミニウム 、酸化チタンおよびフッ化アルミニウムであるが、これらに限定されない)を含 有する。これらの残留物は、しばしば、有効なデバイス性能に必要な金属および 窒化チタンの特性の腐食を引き起こすことなく完全に溶解するのは困難である。 また、CMP後に残留している金属酸化物および酸化ケイ素のスラリー粒子もまた 、これらの処方物により、効果的に除去される。 バイア(via)構造を含む商業的に生成した３つのタイプのウエハを、本発明の 処方物を用いて評価した。各場合において、プラズマエッチングおよびアッシン グ に続いて、21〜60℃の槽で10〜30分間(好ましくは：21〜35℃、20〜30分間)、本 発明の処方物へのウエハの浸漬を行い、続いて、脱イオン水で洗浄し、そして窒 素ガス流で乾燥した。これらの処方物はまた、自動化噴霧器具でのウエハ上への 噴霧、続いて水リンスにより、適用し得ると予想される。 これら３つのバイア構造は、以下であった： １．酸化ケイ素頂部層および第二層、窒化チタン第三層、およびアルミニウム 、ケイ素、銅(AlSiCu)合金の底部層から構成された直径0.8ミクロンの４層バイ ア。基板は、酸化ケイ素であった。 ２．ケイ素基板の頂部上の、酸化ケイ素頂部層(7000オングストローム厚)およ び窒化チタン底部層(1200オングストローム厚)から構成された直径ｌミクロンの ２層バイア。 ３．酸化ケイ素基板上の、窒化チタン頂部層(40Nm.厚)、酸化ケイ素第二層(1. 3ミクロン厚)およびアルミニウム/銅底部層を有する幅1.6ミクロンの４層バイア 。 本発明の処方物を、この処方物の相対的な剥離有効性および腐食性によって、 評価した。好ましい処方物は最高の評点であり、剥離有効性および低腐食性の両 方に基づく全体的な性能は、ほぼ同じである。 本発明は、特定の好ましい実施態様に関して記述されているものの、本発明の 真の精神および範囲から逸脱することなく、種々の変更および改変をこれに行い 得ることは、当業者によって理解される。従って、以下の請求の範囲は、このよ うな全ての変更および改変を含み、やはり、本発明の真の精神および範囲を包含 することを意図している。Description: FIELD OF THE INVENTION The present invention relates generally to chemical formulations used in the manufacture of semiconductor wafers, and more particularly, to chemical formulations used in the manufacture of semiconductor wafers. Following the resist plasma ashing step, it relates to a chemical formulation used to remove residues from the wafer. Description of the Prior Art The prior art teaches, following a resist ashing step, the use of various chemical formulations to remove residues and clean the wafer. Some of these prior art chemical formulations include alkaline compositions that include an amine and / or tetraalkylammonium hydroxide, water and / or other solvents, and a chelating agent. Still other formulations are based on acidic to neutral solutions containing ammonium fluoride. Various prior art formulations have drawbacks, including unnecessary removal of metal or insulating layers and corrosion of the desired metal layers, especially the properties of aluminum and aluminum-copper alloys and titanium nitride. It is. Accordingly, there is a need for a chemical formulation that effectively removes residues following a resist ashing step, without attacking and decomposing fragile structures that will remain on the wafer. SUMMARY OF THE INVENTION A semiconductor wafer cleaning formulation for use in semiconductor manufacturing after plasma ashing, containing the following components in the weight percent ranges indicated below: Ammonium fluoride and / or derivatives thereof; 1-21% organic amine Or a mixture of two amines; 20-55% water; 23-50% a metal chelating agent or a mixture of chelating agents 0-21%. Is to effectively remove. Another advantage of the present invention is that it effectively removes metal halide and metal oxide residues following plasma ashing. A further advantage of the present invention is that it effectively removes aluminum oxide and other oxide slurry particles remaining after CMP (chemical mechanical polishing). Yet another advantage of the present invention is that it provides better release performance with lower corrosivity than formulations containing ammonium fluoride without amine and formulations containing amine without ammonium fluoride. is there. A still further advantage of the present invention is that it provides better release performance at lower processing temperatures than conventional amine-containing formulations. A still further advantage of the present invention is that it contains a chelating agent that prevents metal corrosion and enhances stripping effectiveness. These and other features and advantages of the present invention will become apparent to those of ordinary skill in the art upon reviewing the following detailed description of the preferred embodiments. DETAILED DESCRIPTION OF THE INVENTION The preferred embodiments bear like encompasses formulations suitable for stripping inorganic wafer residues arising from ashing using oxygen-containing plasma followed high density plasma etch. These formulations are also suitable for removing aluminum oxide and other oxide slurry particles remaining after CMP (chemical mechanical polishing). These formulations contain ammonium fluoride or an ammonium fluoride derivative, an amine or amine mixture, water, and, optionally, one or more metal chelators. Preferred formulations use the following ingredients (percentages are by weight): ammonium fluoride and / or derivatives thereof 1-21% organic amine or a mixture of two amines 20-55% water 23- 50% Metal chelator or mixture of chelating agents: 0-21% Preferred amines include: diglycolamine (DGA) methyldiethanolamine (MDEA) pentamethyldiethylenetriamine (PMDETA) triethanolamine (TEA) tri Ethylenediamine (TEDA) Other useful amines include: hexamethylenetetramine 3,3-iminobis (N, N-dimethylpropylamine) monoethanolamine Preferred sources of fluoride include: fluorinated Ammonium Triethanolammonium Fluoride (TEAF) Other useful fluoride sources include: Diglycolammonium (DGAF) Tetramethylammonium fluoride (TMAF) Triethylamine tris (hydrogen fluoride) (TREAT-HF) Effective metal chelators include: ammonium acetoacetamide carbamate ammonium pyrrolidine dithiocarbamate ( (APDC) Dimethyl malonate Methyl acetoacetate N-methylacetoacetamide 2,4-pentanedione Tetramethylammonium thiobenzoate Tetramethylammonium trifluoroacetate Tetramethylthiuram disulfide (TMTDS) Ammonium fluoride or a substituted fluoride source identified above And amines (in amounts of 1% or less, but not as surfactants) have lower corrosivity than formulations containing ammonium fluoride without amine and formulations containing amine without ammonium fluoride. Have , Providing better release performance. Further, the resulting alkaline solution was effective at lower processing temperatures (21 ° C to 40 ° C) than conventional amine-containing formulations. The use of 1,3-dicarbonyl compounds as chelating agents and for preventing metal corrosion also appears to enhance efficacy. In the prior art, amines are limited to no more than 1% of the formulation and act only as surfactants, or amines are not used at all as components of the formulation. Also, this prior art formulation is acidic (pH <7). In the formulations of the present invention, the amine is present as a major component and plays a major role in exfoliation, and the formulation is basic (pH> 7). Some representative examples of preferred formulations include: triethanolamine 45% ammonium fluoride 5% water 50% diglycolamine 55% ammonium fluoride 5% 2,4-pentanedione 10% water 30% triethanolamine 27.1% TEAF 20.3% 2,4-pentanedione 10% water 42.6% PMDETA 45% ammonium fluoride 5% methyl acetoacetate 6% water 44% PMDETA 45% ammonium fluoride 1% 2,4-pentane Dione 8% APDC 15% Water 31% PMDETA 55% Ammonium fluoride 1% Dimethyl malonate 13.2% TMTDS 6% Water 24.8% TEA 36% PMDETA 16% Ammonium fluoride 12% Acetoacetamide 10% Water 28% TEA 45% Ammonium fluoride 11.4% Tetramethylammonium trifluoroacetate 17% Water 27% Triethanolamine 45-52% Ammonium fluoride 3-10% 2,4-pentanedione 5-10% water 35-44% PMDETA 38-45% ammonium fluoride 5% 2,4-pentanedione 10% water 40-47% PMDETA 38% TMAF 5% ammonium fluoride 2% 2,4-pentanedione 10 % Water 45% PMDETA 38% ammonium fluoride 1% 2,4-pentanedione 10.7% ammonium carbamate 10% water 38.3% We have found that closely related components are used in our formulations. It is expected that it will show performance comparable to the components that do. These include: A. Other organic amines are expected to be suitable. B. Other substituted ammonium fluorides are expected to be suitable. These have the general formula R 1 R 2 R 3 R 4 NF, wherein the R group is a hydrogen atom and / or an aliphatic group. C. Other metal chelators, including: Other 1,3-dicarbonyl compounds are expected to show comparable performance. They have the following general structure: X-CHR-Y, where R is either a hydrogen atom or an aliphatic group, and X and Y are known to have electron withdrawing properties For example, X and Y can be CONH 2 , CONHR ′, CN, NO 2 , SOR ′, SO 2 Z, where R ′ is an alkyl group And Z represents another atom or group. X and Y can be the same or different. 2. Other amine trifluoroacetates are also expected to be suitable as chelating agents. They have the general formula R 1 R 2 R 3 R 4 N + —O 2 CCF 3 , wherein the R groups are hydrogen atoms and / or aliphatic groups. D. The inclusion of optional components (eg, surfactants, stabilizers, corrosion inhibitors, buffers and co-solvents) is also expected to constitute a clear addition to those practiced in the art. The formulations of the present invention are particularly useful on wafers that are oxygen plasma ashed following etching with a chlorine or fluorine containing plasma. Residues generated by this type of treatment typically contain inorganic materials such as, but not limited to, aluminum oxide, titanium oxide and aluminum fluoride. These residues are often difficult to completely dissolve without causing corrosion of the metal and titanium nitride properties required for effective device performance. Also, slurry particles of metal oxide and silicon oxide remaining after CMP are also effectively removed by these formulations. Three types of commercially produced wafers containing via structures were evaluated using the formulations of the present invention. In each case, the plasma etching and ashing were followed by immersion of the wafer in the formulation of the invention for 10-30 minutes (preferably: 21-35 ° C, 20-30 minutes) in a bath at 21-60 ° C. Subsequently, it was washed with deionized water and dried with a stream of nitrogen gas. It is envisioned that these formulations may also be applied by spraying on a wafer with an automated spraying instrument, followed by a water rinse. These three via structures were as follows: 0.8 micron diameter 4-layer via composed of a top and second layer of silicon oxide, a third layer of titanium nitride, and a bottom layer of aluminum, silicon, copper (AlSiCu) alloy. The substrate was silicon oxide. 2. 1 micron diameter two-layer via consisting of a silicon oxide top layer (7000 Angstroms thick) and a titanium nitride bottom layer (1200 Angstroms thick) on top of a silicon substrate. 3. 1.6 micron wide 4-layer via with titanium nitride top layer (40 Nm. Thick), silicon oxide second layer (1.3 micron thickness) and aluminum / copper bottom layer on silicon oxide substrate. The formulations of the present invention were evaluated by their relative release effectiveness and corrosivity. The preferred formulation has the highest score, and the overall performance based on both release effectiveness and low corrosivity is about the same. Although the invention has been described with respect to certain preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made thereto without departing from the true spirit and scope of the invention. It is therefore intended that the following claims cover all such changes and modifications and still encompass the true spirit and scope of the invention.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ１１Ｄ 17/08 Ｃ１１Ｄ 17/08 Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/302 Ｈ (31)優先権主張番号 ０８／９２４，０２１ (32)優先日 平成９年８月29日(1997．8．29) (33)優先権主張国 米国（ＵＳ） (81)指定国 ＥＰ(ＡＴ，ＢＥ，ＣＨ，ＤＥ， ＤＫ，ＥＳ，ＦＩ，ＦＲ，ＧＢ，ＧＲ，ＩＥ，ＩＴ，Ｌ Ｕ，ＭＣ，ＮＬ，ＰＴ，ＳＥ)，ＣＡ，ＩＤ，ＩＬ，Ｊ Ｐ，ＫＲ，ＳＧ (72)発明者 ファイン，ダニエル エヌ. アメリカ合衆国 マサチューセッツ 01960，ピーボディ，ジョーンズ ロード ７ (72)発明者 ファイン，ステファン エイ. アメリカ合衆国 マサチューセッツ 01960，ピーボディ，ジョーンズ ロード ７──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) C11D 17/08 C11D 17/08 H01L 21/3065 H01L 21/302 H (31) Priority claim number 08/924 , 021 (32) Priority date August 29, 1997 (August 29, 1997) (33) Priority country United States (US) (81) Designated country EP (AT, BE, CH, DE, DK, ES , FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE), CA, ID, IL, JP, KR, SG (72) Inventor Fine, Daniel N. Massachusetts, USA 01960 , Peabody, Jones Road 7 (72) Inventor Fine, Stephen A. Massachusetts, USA 01960, Peabody, Jones Road 7
Claims (1)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3419497P | 1997-01-09 | 1997-01-09 | |
| US4482497P | 1997-04-25 | 1997-04-25 | |
| US60/044,824 | 1997-08-29 | ||
| US08/924,021 US6224785B1 (en) | 1997-08-29 | 1997-08-29 | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
| US08/924,021 | 1997-08-29 | ||
| US60/034,194 | 1997-08-29 | ||
| PCT/US1998/000392 WO1998030667A1 (en) | 1997-01-09 | 1998-01-08 | Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007291278A Division JP2008066747A (en) | 1997-01-09 | 2007-11-08 | Semiconductor wafer cleaning composition using water ammonium fluoride and amine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001508239A true JP2001508239A (en) | 2001-06-19 |
| JP2001508239A5 JP2001508239A5 (en) | 2005-09-08 |
Family
ID=27364594
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53111898A Withdrawn JP2001508239A (en) | 1997-01-09 | 1998-01-08 | Semiconductor wafer cleaning composition and method using aqueous ammonium fluoride and amine |
| JP2007291278A Ceased JP2008066747A (en) | 1997-01-09 | 2007-11-08 | Semiconductor wafer cleaning composition using water ammonium fluoride and amine |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007291278A Ceased JP2008066747A (en) | 1997-01-09 | 2007-11-08 | Semiconductor wafer cleaning composition using water ammonium fluoride and amine |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP2001508239A (en) |
| WO (1) | WO1998030667A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7928446B2 (en) | 2007-07-19 | 2011-04-19 | Mitsubishi Chemical Corporation | Group III nitride semiconductor substrate and method for cleaning the same |
| JP2012032757A (en) * | 2010-07-06 | 2012-02-16 | Tosoh Corp | Resist stripping agent and stripping method using the same |
| WO2021054010A1 (en) * | 2019-09-18 | 2021-03-25 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | Cleaning solution and cleaning method |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6828289B2 (en) | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
| US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| KR100874173B1 (en) * | 2001-03-27 | 2008-12-15 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | An aqueous cleaning composition containing a copper specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates. |
| US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| US7888302B2 (en) | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
| US7682458B2 (en) | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
| TW200925268A (en) * | 2007-12-06 | 2009-06-16 | Mallinckrodt Baker Inc | Fluoride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4165295A (en) * | 1976-10-04 | 1979-08-21 | Allied Chemical Corporation | Organic stripping compositions and method for using same |
| FR2372904A1 (en) * | 1976-11-19 | 1978-06-30 | Ibm | STRIPPING COMPOSITION OF POLYCRYSTALLINE SILICON CONTAINING TETRAMETHYLAMMONIUM HYDROXIDE AND APPLICATION METHOD |
| US4215005A (en) * | 1978-01-30 | 1980-07-29 | Allied Chemical Corporation | Organic stripping compositions and method for using same |
| DD153308A1 (en) * | 1980-09-12 | 1981-12-30 | Helmut G Prof Dr Rer Schneider | PROCESS FOR PRODUCING COATED SUBSTRATES FOR THICK-CIRCUIT CIRCLES |
| US4863563A (en) * | 1987-01-27 | 1989-09-05 | Olin Corporation | Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching |
| JP2857042B2 (en) * | 1993-10-19 | 1999-02-10 | 新日本製鐵株式会社 | Cleaning liquid for silicon semiconductor and silicon oxide |
| JP2743823B2 (en) * | 1994-03-25 | 1998-04-22 | 日本電気株式会社 | Semiconductor substrate wet treatment method |
| JP3074634B2 (en) * | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | Stripping solution for photoresist and method for forming wiring pattern |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| JP3689871B2 (en) * | 1995-03-09 | 2005-08-31 | 関東化学株式会社 | Alkaline cleaning solution for semiconductor substrates |
| US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| JPH08306651A (en) * | 1995-05-09 | 1996-11-22 | Mitsubishi Chem Corp | Alkaline cleaning composition and cleaning method using the composition |
| TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| US5709756A (en) * | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
| US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
-
1998
- 1998-01-08 JP JP53111898A patent/JP2001508239A/en not_active Withdrawn
- 1998-01-08 WO PCT/US1998/000392 patent/WO1998030667A1/en active Application Filing
-
2007
- 2007-11-08 JP JP2007291278A patent/JP2008066747A/en not_active Ceased
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7928446B2 (en) | 2007-07-19 | 2011-04-19 | Mitsubishi Chemical Corporation | Group III nitride semiconductor substrate and method for cleaning the same |
| US8022413B2 (en) | 2007-07-19 | 2011-09-20 | Misubishi Chemical Corporation | Group III nitride semiconductor substrate and method for cleaning the same |
| JP2012032757A (en) * | 2010-07-06 | 2012-02-16 | Tosoh Corp | Resist stripping agent and stripping method using the same |
| WO2021054010A1 (en) * | 2019-09-18 | 2021-03-25 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | Cleaning solution and cleaning method |
| JPWO2021054010A1 (en) * | 2019-09-18 | 2021-03-25 | ||
| JP7541014B2 (en) | 2019-09-18 | 2024-08-27 | 富士フイルム株式会社 | Cleaning solution and cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998030667A1 (en) | 1998-07-16 |
| JP2008066747A (en) | 2008-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6224785B1 (en) | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates | |
| US7662762B2 (en) | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates | |
| JP4226216B2 (en) | Stripping composition for semiconductor substrate | |
| US6896826B2 (en) | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate | |
| KR100386137B1 (en) | Ethylenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process | |
| KR100900380B1 (en) | Semiconductor process residue removal composition and process | |
| JP2008066747A (en) | Semiconductor wafer cleaning composition using water ammonium fluoride and amine | |
| WO2004094581A1 (en) | Aqueous fluoride compositions for cleaning semiconductor devices | |
| US6399551B1 (en) | Alkanolamine semiconductor process residue removal process | |
| US20080004193A1 (en) | Semiconductor process residue removal composition and process | |
| JP2005532423A (en) | Non-corrosive cleaning composition for removing etching residues | |
| EP1381656B1 (en) | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate | |
| JP2003035963A (en) | Photoresist residue removing solution composition | |
| JP4386968B2 (en) | Formulation comprising a 1,3-dicarbonyl compound chelator for stripping residues from a semiconductor substrate | |
| WO1998022568A1 (en) | Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050105 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050105 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070626 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070925 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20071112 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20071026 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071108 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20071217 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080513 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080811 |