JP2001358292A - Three-dimensional semiconductor device, ink tank where it is arranged, and ink jet recording device having ink tank - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device for extremely efficiently exchanging information bi- directionally with an external device such as an ink jet recording device by detecting detailed information in real time inside or outside such a container as an ink tank. SOLUTION: A ball-type semiconductor device 11 is arranged inside or outside such container as the ink tank, and the device is provided with an energy conversion means 14 for converting electromotive force 12 that is supplied from outside A to the device 11 without any contact to power 13, an information acquisition means 15 for acquiring information on environment around the device, a decision means 16, an information accumulation means 17 for accumulating information for comparing with the acquisition information of the information acquisition means 15 by the decision means 16, and an information transmission means 18 for transmitting the acquisition information to the outside by the decision of the decision means 16. A non-volatile memory, namely FeRAM, that is made of a ferroelectric, is used as the information accumulation means 17, and the information acquisition means 15, decision means 16, information accumulation means 17, and information transmission means 18 are started by power obtained by the energy conversion means 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a function of detecting surrounding environment information and transmitting and displaying the information to the outside. The present invention also relates to a device for detecting information (for example, the remaining amount of ink) in an ink tank and displaying and transmitting the information to the outside, an ink tank provided with the device, a facsimile printer having the ink tank detachably mounted thereon, The present invention relates to an inkjet recording device such as a copying machine.

[0002]

2. Description of the Related Art In an environment surrounding us, there are many devices and devices which detect surrounding environment information, make judgments based on the results, and operate them.

For example, in the case of a cooler, for example, the temperature of the current environment is detected, the temperature is compared with a preset temperature, and when the temperature is lower than the set value, the operation of heating is performed. Conversely, when the temperature is higher than the set value, the cooling operation is performed by the device. These can be configured relatively easily using conventional equipment and components.

[0004] However, even when the environmental information is not only temperature, but also diversified, space is restricted, and it is not possible to configure a part because a sufficient place cannot be secured, a decision is made based on the environmental information instantaneously. Although there are many requirements, such as the need to do so, at present the situation is not sufficient due to many restrictions.

In recent years, much research has been conducted in the field of microdevices, which are expected to be applied in various fields, but further studies are required for practical use.

As a specific example, by moving a carriage mounted with a recording head in a printing direction while ejecting ink from a plurality of ejection nozzles provided on the recording head,
In an ink jet recording apparatus that prints an image on paper in a dot pattern, an ink tank containing recording ink is provided, and the ink in the ink tank is supplied to a recording head via an ink supply path. I have. In view of the above, various types of ink remaining amount detecting devices that detect the remaining amount of ink in the ink tank are put to practical use, and various proposals have been made.

For example, according to JP-A-6-143607, two (one pair) electrodes 702 are provided on the inner surface on the bottom side of an ink tank 701 filled with non-conductive ink as shown in FIG. A floating body 703 provided with an electrode 704 at a position facing the electrode 702 is provided in the ink in the ink tank 701. Two electrodes 702
Are connected to a detection unit (not shown) for detecting the conduction state of both electrodes, and when the conduction state of both electrodes is detected, an ink remaining amount error indicating that there is no ink in the ink tank 701 is issued, Inkjet recording head 70
5 is disclosed to stop the operation.

According to Japanese Patent No. 2947245,
As shown in FIG. 27, the lower portion is formed in a funnel shape toward the bottom surface, and two conductors 801 and 802 are provided on the bottom surface.
An ink cartridge 805 for an ink jet printer having a configuration in which an ink cartridge 4 is installed is disclosed. In such a configuration, as the ink 803 is consumed and decreases, the liquid level of the ink 803 decreases. Accordingly, the ink 80
The position of the metal ball 804 floating on the surface of No. 3 goes down. When the liquid level of the ink 803 drops to the position of the bottom surface of the ink cartridge housing, the metal sphere 804 comes into contact with the two conductors 801 and 802. Then, the conductors 801 and 80
2 conducts, during which time a current flows. If the flow is detected, the ink end state can be detected. When the ink end state is detected, information indicating the ink end state is notified to the user.

[0009]

As described above, while developing a device which is constructed in a limited space, detects surrounding environment information, makes an instantaneous judgment, and performs the next operation, the present invention has been developed. The inventors focused on a ball semiconductor manufactured by Ball Semiconductor, which forms a semiconductor integrated circuit on a spherical surface of a silicon ball having a diameter of 1 mm. Since this ball semiconductor is spherical, it was expected that the detection of ambient environment information and the exchange of bidirectional information with the outside could be performed much more efficiently than the planar type. However, when investigating those with such a function,
Only with the technology of connecting balls and semiconductors with electric wiring as in SP5877943, etc., the development of the element itself having the above functions was required.
Also, in order to judge while comparing with the surrounding environment information,
It became clear that means for storing information was indispensable, and there was a problem that had to be cleared in order to construct this into a desired element.

One of the problems is that, in order to form a means for storing information in an element such as a ball semiconductor, it is necessary to first reduce the size, to operate with less energy consumption, and to provide a power supply system. Therefore, there is a need for a new element that can hold information without being affected by the energy fluctuation of the element and can rewrite information in some cases.

On the other hand, taking the above-described ink tank as an example, a configuration for detecting the remaining amount of ink in the ink tank, as represented by a conventional publication, is known. It is necessary to arrange an electrode for detection. Further, since the remaining amount of the ink is detected based on the conduction state between the electrodes, there is a restriction on the ink to be used, for example, metal ions are not used in the ink component.

Further, in the above configuration, only the remaining amount of ink can be detected, and other information in the tank cannot be known to the outside. For example, pressure information in the ink tank,
Changes in physical properties of the ink are important parameters for operating the ink jet head at a stable ejection amount at all times, and an object of the present invention is to change the internal pressure of the tank, which changes momentarily with the consumption of ink in the tank, to an external pressure. An object of the present invention is to provide an ink tank capable of notifying an ink jet recording apparatus in real time or transmitting a change in ink physical properties to the outside.

Another object of the present invention is not only to unilaterally notify the detected information in the ink tank to the outside, but also to perform bidirectional information exchange in which the internal information is returned in response to an inquiry from the outside. It is to provide an ink tank that can be used.

In order for the above elements to be effectively applicable to the ink tank, the elements contained in the tank are activated, and the element for storing information can be driven with low power. Supply. If the ink tank has a power supply for starting the element, the tank becomes large, or even if a power supply is provided outside the tank, a connecting means between the power supply and the element is required, which increases the manufacturing cost of the tank and increases the tank cartridge. Therefore, it is preferable to start the element without contact from outside.

A further problem is that the ink tank can float in the ink level of the ink tank or in the ink that has sunk a certain distance from the liquid level. For example, in order to monitor the change in the amount of negative pressure due to ink consumption in the ink tank over time, it is desirable that the element is located on the ink liquid surface, but since the element is made of silicon having a higher specific gravity than water, the element floats on the ink. It is difficult to let.

An object of the present invention is to provide a three-dimensional semiconductor device capable of detecting ambient environment information and exchanging information with the outside in two directions very efficiently.

A further object of the present invention is to provide a three-dimensional semiconductor device capable of detecting detailed information in an ink tank in real time and exchanging information bidirectionally with an external ink jet recording apparatus. An object of the present invention is to provide an ink tank provided with elements and an ink jet recording apparatus provided with the tank.

[0018]

A three-dimensional semiconductor device according to the present invention for achieving the above object has an energy conversion means for converting external energy into different kinds of energy, and information for obtaining external environmental information. Obtaining means, information storage means for storing information for comparison with information obtained by the information obtaining means, and comparing the information obtained by the information obtaining means with the information stored in the corresponding information storage means. , Means for determining the need for communication,
An information transmission means for displaying or transmitting information obtained by the information obtaining means to the outside when the information transmission is determined to be necessary by the determination means; and the information obtaining means, the information storage means, and the determination means , And the information transmitting means are operated by the energy converted by the energy converting means, and the information storing means is a FeRAM made of a ferroelectric.

Further, the three-dimensional semiconductor device of the present invention comprises: an energy conversion means for converting external energy into energy of a different kind; a receiving means for receiving an external signal; an information storage means for storing information; Information transmitting means for displaying or transmitting the information of the information storing means in accordance with the signal received by the receiving means, wherein the receiving means, the information storing means, and the information transmitting means are converted by the energy converting means. The information storage means is an FeRAM made of a ferroelectric material.

Further, the three-dimensional semiconductor device of the present invention comprises an energy conversion means for converting external energy into different kinds of energy, a receiving means for receiving an external signal, and an information obtaining means for obtaining external environmental information. Means, an information storage means for storing information for comparison with information obtained by the information obtaining means, and causing the information obtaining means to obtain external environment information in accordance with a signal received by the receiving means, A determination unit for comparing the information stored in the information storage unit with the corresponding information and determining whether the obtained information satisfies a predetermined condition; and displaying or transmitting at least a determination result by the determination unit to the outside The information converting means, and the receiving means, the information accumulating means, the determining means, and the information transmitting means are provided with the energy converting means. In operated by energy converted, it said information accumulating means is a FeRAM formed of a ferroelectric.

The constituent materials of the ferroelectric are PZT (lead zirconate titanate: [solid solution of PbZrO ₃ and PbTiO ₃ ]) and PLZT (lead lanthanum zirconate titanate: PZT).
ZT, ie, a solid solution of PbZrO ₃ and PbTiO ₃
), SBT (strontium bismuth tantalate: Sr—Bi ₂ —Ta ₂ O ₉ ), SrTiO ₃
(STO: strontium titanate), BaTiO
₃ (BTO: barium titanate) or (Ba-Sr)
TiO ₃ (BST: barium strontium titanate)
It is preferred that

The information transmitting means may display or transmit to another three-dimensional semiconductor element, and the receiving means may also receive a signal from another three-dimensional semiconductor element. . Further, the three-dimensional semiconductor element as described above may have a function of applying an electromotive force to another three-dimensional semiconductor element.

In the three-dimensional semiconductor device as described above, it is preferable that the external energy converted by the energy conversion means is supplied in a non-contact manner.

In the three-dimensional semiconductor device as described above, the energy converted by the energy conversion means is electric power. The external energy converted into electric power by the energy conversion means may be electromagnetic induction or electromotive force due to heat, light, or radiation.

In this case, the information transmitting means converts the electric power converted by the energy converting means into a magnetic field, light, shape, color, radio wave, or sound, which is energy for displaying or transmitting information to the outside. Can be considered.

The energy conversion means may have a conductor coil and an oscillation circuit for generating electric power by electromagnetic induction with an external resonance circuit, and the conductor coil may have an outer surface of a three-dimensional semiconductor element. It is preferably formed so as to be wound around.

The three-dimensional semiconductor device as described above is
A buoyancy generating means for generating buoyancy using the energy converted by the energy conversion means may be further provided.

The three-dimensional semiconductor device as described above is
It may have a cavity for floating at a predetermined position in the liquid surface or in the liquid.

In this case, the center of gravity of the three-dimensional semiconductor element floating in the liquid is located below the center of the element, and
It is preferable that the meta-center of the three-dimensional semiconductor element is always above the center of gravity of the three-dimensional semiconductor element with respect to the direction of gravity without rotating in the floating liquid.

The ink tank of the present invention has a plurality of the above-mentioned three-dimensional semiconductor elements. In particular,
In such an ink tank, at least one of the plurality of three-dimensional semiconductor elements is floating at a predetermined position in the ink surface or ink in the ink tank, and the plurality of three-dimensional semiconductor elements are The information obtained by the information obtaining means is compared with the information stored in the information storage means corresponding thereto, and after the determination means determines the necessity of information transmission, the result of the determination by the determination means is transmitted to the information transmission means. Output from the means to the outside.

Further, of the plurality of three-dimensional semiconductor elements, other than the three-dimensional semiconductor element floating on the liquid surface of the ink in the ink tank, other three-dimensional semiconductor elements are fixed to the ink tank. The three-dimensional semiconductor device of the present invention, the other three-dimensional semiconductor device fixed to the ink tank receives a signal from the three-dimensional semiconductor device floating on the liquid surface of the ink, the inside of the ink tank It is preferable to detect the remaining amount of the ink.

Further, the ink jet recording apparatus of the present invention
The above-mentioned ink tank is mounted. In this case, it is preferable that the recording apparatus has a unit for supplying an electromotive force to the three-dimensional semiconductor element in the ink tank as external energy converted by the energy conversion unit. The electromotive force may be electromagnetic induction, heat, light, or radiation. Further, it is preferable that the above-mentioned ink jet recording apparatus has means for receiving transmission from the three-dimensional semiconductor element.

The "meta center" in this specification is
It shows the intersection of the action line of weight when balanced and the action line of buoyancy when tilted.

The term "three-dimensional shape" of the "three-dimensional type semiconductor element" in this specification includes all of various three-dimensional shapes such as a triangular prism, a sphere, a hemisphere, a quadratic prism, a spheroid, and a uniaxial rotator.

When the method of supplying external energy is used in an ink jet recording apparatus, means for supplying electromotive force to the element as external energy may be provided at a recovery position, a return position, a carriage, a head, or the like. In addition, if an apparatus having a means for supplying an electromotive force is used, the state inside the ink tank can be known without an ink jet recording apparatus. For example, if the apparatus is used in a factory or a store, it is used for inspection ( quality assurance).

(Operation) In the three-dimensional semiconductor device as described above, when a specific energy is applied from outside the device (preferably in a non-contact manner), the energy conversion means converts the external energy to a different energy, and this conversion is performed. The information obtaining means, the determining means, the information storing means, and the information transmitting means are activated by the supplied energy. The activated information obtaining means obtains environmental information around the element. Next, the determining means reads the obtained information and the information to be referred from the information storage means, compares the read stored information with the obtained information, and determines the necessity of information transmission. Then, when it is determined that the information needs to be transmitted, the determining unit transmits the obtained information to the outside by the information transmitting unit.

Since the function of acquiring the surrounding environment information and transmitting it to the outside is built in the three-dimensional semiconductor element, the information can be obtained and transmitted three-dimensionally. There are fewer restrictions on the direction of information transmission as compared to the case. Therefore, it is possible to efficiently obtain the surrounding environment information and transmit it to the outside. Here, the information storage means is a nonvolatile FeRAM (Ferroelectr) made of a ferroelectric material.
ic Random Access Memory (ferroelectric memory), the information storage means is a commonly used DR
It has a high signal exchange speed, such as fast reading and writing of data, like AM, and can hold data even when the power is turned off. On the other hand, it can be driven at low voltage,
It is possible to reduce the size by using a semiconductor process. Thus, FeRAM can be accessed at high speed,
Since it is non-volatile, data is not erased even if the power supply is unstable, and it is possible to reduce the size with low power consumption. Therefore, it is possible to configure the information storage means of a three-dimensional semiconductor element very effectively. This is particularly effective when a three-dimensional semiconductor element is used in an ink tank by utilizing the above characteristics.

Furthermore, by adding a communication means for receiving an external signal, information corresponding to the received signal can be obtained, and the result of comparison with the stored information can be transmitted to the outside together with the obtained information. It is also possible to exchange signals bidirectionally with an external device. Here, as described above, a FeRAM made of a ferroelectric material is used as the information storage means, and accurate information processing is performed by storing the stored information in the FeRAM, so that bidirectional signal exchange with an external device is performed at high speed. And can be driven at a low voltage.
Further, by utilizing the ferroelectric material of FeRAM as a capacitor, the capacitance of the three-dimensional semiconductor device can be increased. Since the communication frequency of the three-dimensional semiconductor element can be reduced by increasing the capacitance of the three-dimensional semiconductor element in this manner, communication of the three-dimensional semiconductor element can be performed even at a low frequency, and the degree of freedom of communication is increased. .

By arranging a plurality of such three-dimensional semiconductor elements in the ink tank, information on the ink contained in the ink tank, pressure in the tank, and the like can be transferred in real time to an external, for example, an ink jet recording apparatus. It is possible to communicate. For example, in order to control the amount of negative pressure in the tank that changes momentarily with ink consumption and to stabilize inkjet discharge, a size that is required from high speed, low power consumption, and space constraints is required.
In these respects, it is advantageous to store the stored information in a FeRAM made of a ferroelectric.

Further, since the external energy for operating the three-dimensional semiconductor element is supplied in a non-contact manner, an energy source for starting the element is provided in the ink tank, and the energy supply wiring is connected to the element. It can be used in places where it is not necessary to connect directly to the outside and it is difficult to provide direct wiring to the outside.

For example, when the starting energy of the element is electric power, a conductor coil of the oscillation circuit is formed as an external energy conversion means so as to be wound around the outer surface of the three-dimensional semiconductor element, so that it can be connected to an external resonance circuit. Electric power can be supplied to the element in a non-contact manner by generating electric power in the conductor coil by electromagnetic induction between them.

In this case, since a coil is wound around the outer surface of the element, the magnitude of the inductance of the coil changes according to, for example, the remaining amount of ink in the ink tank, the ink concentration, and the ink pH. Therefore, since the oscillation circuit changes the oscillation frequency in accordance with the change in the inductance, it is also possible to detect the remaining amount of the ink in the ink tank and the like based on the change in the changed oscillation frequency.

Since the three-dimensional semiconductor element has a cavity for floating in the liquid and the center of gravity of the element is formed below the center of the element, for example, ink jet recording The print head and ink tank mounted on the device operate serially, and even if the ink in the ink tank swings up, down, left, and right, the information and information about the ink are stably suspended in the ink in the ink tank. , The pressure in the tank and the like can be accurately detected. In addition, the coil of the oscillation circuit formed on the element is held at a stable position with respect to the coil of the external resonance circuit, and stable two-way communication is always possible.

[0044]

Embodiments of the present invention will be described below with reference to the drawings. Particularly, an embodiment in which an element is arranged in an ink tank will be described in detail.
It should be noted that this element is not used only for the ink tank, and the same effect can be obtained by arranging it in another object.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 3 is a block diagram showing an internal configuration of the three-dimensional semiconductor device according to the embodiment and exchanges with the outside. The three-dimensional semiconductor element 11 of the form shown in FIG. 1 includes an energy conversion means 14 for converting an electromotive force 12 supplied from the outside A to the element 11 in a non-contact manner into an electric power 13, and an electric power obtained by the energy conversion means 14. Information acquisition means 1 activated by
5, judgment means 16, information storage means 17, information transmission means 1
8 are provided in the ink tank. Electromagnetic induction, heat, light, radiation, or the like can be applied to the electromotive force supplied to operate the element. It is desirable that at least the energy conversion means 14 and the information obtaining means 15 are formed on or near the surface of the element. In the present embodiment, the information storage means 17 is a FeRA made of a ferroelectric material.
M (Ferroelectric Random Access Memory: ferroelectric memory) is used.

The information obtaining means 15 obtains information in the ink tank which is information on the surrounding environment of the element 11. The determining means 16 compares the tank internal information obtained from the information obtaining means 15 with the information stored in the information storage means 17 and determines whether it is necessary to transmit the obtained tank internal information to the outside. The information storage unit 17 stores various conditions to be compared with the obtained tank internal information and the tank internal information obtained from the information obtaining unit 15. The information transmitting means 18 converts the electric power into energy for transmitting to the tank internal information according to the instruction of the determining means 16 and displays and transmits the ink internal information to the external B.

FIG. 2 is a flowchart for explaining the operation of the device shown in FIG. Referring to FIGS. 1 and 2, when an electromotive force 12 is applied from the outside A toward the element 11, the energy conversion unit 14 converts the electromotive force 12 into the power 13, and the information obtaining unit 15 uses the power to convert the power into the information 13. Activate the means 16, the information storage means 17, and the information transmission means 18.

The activated information obtaining means 15 obtains information in the ink tank which is environmental information around the element, for example, information such as the remaining amount of ink, the type of ink, the temperature and the pH (step S11 in FIG. 2). ). Next, the determination means 16
The obtained tank internal information is read from the information storage means 17 from the information storage means 17 (step S12 in FIG. 2), and the read conditions are compared with the obtained tank internal information to determine the necessity of information transmission (step S12). Step S1 in FIG.
3). Here, the determination based on the conditions set in advance in the information storage unit 17 is based on the determination that the tank needs to be replaced because, for example, the remaining amount of ink has become 2 ml or less, or the pH of the ink has greatly changed. What to do.

If it is determined in step S13 that the information in the tank does not need to be transmitted to the outside, the information in the current ink tank is stored in the information storage means 17 (step S13 in FIG. 2). S14). This accumulated information is then used as information obtained by the information obtaining means 15 and the judgment means 1
6 may be compared.

In step S13, the judgment means 1
If it is determined that the information in the tank needs to be transmitted to the outside, the power obtained by the energy conversion is converted by the information transmitting means 18 into energy for transmitting the information in the ink tank to the outside. Is converted. The energy for this transmission can use magnetic fields, light, shapes, colors, radio waves, sounds, etc. For example, if it is determined that the remaining ink amount is less than 2 milliliters, a sound is generated and the tank is sounded. The fact that replacement is necessary is transmitted to the external B (for example, an ink jet recording apparatus) (step S15 in FIG. 2). In addition, the transmission destination is not limited to the ink jet recording apparatus. In particular, in the case of light, shape, color, sound, or the like, the information may be transmitted to human vision or hearing. Further, the transmission method may be changed according to the information, such as sound when it is determined that the remaining amount of ink is 2 milliliters or less, and light when the pH of the ink has largely changed.

When used in an ink jet recording apparatus, means for supplying electromotive force to the element as external energy may be provided at the recovery position, return position, carriage, head, or the like. In addition, if an apparatus having a means for supplying an electromotive force is used, the state inside the ink tank can be known without an ink jet recording apparatus. For example, if the apparatus is used in a factory or a store, it is used for inspection ( quality assurance).

According to the present embodiment, since the element has the energy conversion means, it is not necessary to perform direct electrical wiring with the outside, and it is difficult to perform direct electrical wiring with the outside. The element can be used at any point in the object, for example, in the ink as shown in FIGS. 11 to 14. By arranging the elements in the ink, the state of the ink can be accurately grasped in real time.

Further, since the element has the energy conversion means, it is not necessary to arrange a means (in this example, a power supply) for storing an electromotive force for operating the element, so that the element can be downsized. , Narrow places, or Figure 11-
As shown in FIG. 14, the element can be used at any position in the object, such as in the ink. In the present embodiment, the electromotive force is supplied in a non-contact manner. However, a mode in which the electromotive force is supplied in a temporary contact with the outside and then in a non-contact state with the outside may be employed.

In this embodiment, a FeRAM made of a ferroelectric is used as the information storage means 17 as described above. As a result, the information storage means 17 has a high speed of reading and writing data as fast as a commonly used DRAM (Dynamic Random Access Memory),
This is a non-volatile memory that can hold data even when the power is turned off. As described above, the fact that the FeRAM can be accessed at a high speed and that the data is not erased even when the power supply is unstable because it is nonvolatile is effective when the three-dimensional semiconductor element is used in the ink tank. By accumulating the accumulated information in the FeRAM in this manner, accurate information processing can be performed, and bidirectional signal exchange with an external device can be performed at a high speed and at a low voltage. On the other hand, it can be driven at a low voltage and can be made compact by using a semiconductor process. As described above, since FeRAM can be accessed at high speed and is non-volatile, data is not lost even if the power supply is unstable, and it can be miniaturized with low power consumption. It can be effectively configured. This is particularly effective when a three-dimensional semiconductor element is used in an ink tank as described later by taking advantage of the above characteristics.

Further, since the information storage means 17 is a FeRAM made of a ferroelectric material, if the ferroelectric material of the FeRAM is used as a capacitor, the capacitance of the three-dimensional semiconductor device can be increased. By increasing the capacitance of the three-dimensional semiconductor element in this way, even when the three-dimensional semiconductor element exchanges signals with an external device, the communication frequency of the three-dimensional semiconductor element can be reduced as described later. Also, communication of the three-dimensional semiconductor element can be performed even at a low frequency, and the degree of freedom of communication is increased.

(Second Embodiment) FIG. 3 shows a second embodiment of the present invention.
FIG. 3 is a block diagram showing an internal configuration of the three-dimensional semiconductor device according to the embodiment and exchanges with the outside. The three-dimensional semiconductor element 21 of the form shown in FIG. 1 includes an energy conversion unit 24 that converts an electromotive force 22 supplied from the outside A to the element 21 in a non-contact manner into an electric power 23, and an electric power obtained by the energy conversion unit 24. Information acquisition means 2 activated by
5, judgment means 26, information storage means 27, information transmission means 2
8, a receiving means 29, and is provided in the ink tank. It differs from the first embodiment in that it has a receiving function. Further, the electromotive force supplied to operate the element is:
Electromagnetic induction, heat, light, radiation and the like can be applied. It is desirable that at least the energy conversion means 24, the information acquisition means 25, and the reception means 29 are formed on or near the surface of the element. Also in the present embodiment, a FeRAM made of a ferroelectric is used as the information storage unit 27.

The information obtaining means 25 obtains information in the ink tank which is information on the surrounding environment of the element 21. The receiving means 29 receives the input signal 20 from the external A or the external B. The determining means 26 makes the information obtaining means 25 obtain the tank internal information in accordance with the input signal from the receiving means 29,
The obtained tank internal information is compared with the information stored in the information storage means 27 to determine whether the obtained tank internal information satisfies a predetermined condition. Information storage means 2
7 stores various conditions to be compared with the obtained tank internal information and the tank internal information obtained from the information obtaining means 25.
The information transmitting means 28 converts the electric power into energy for transmitting to the tank internal information according to the command of the determining means 26, and displays and transmits the result of the determination by the determining means 26 to the external A, the external B or the external C.

FIG. 4 is a flow chart for explaining the operation of the device shown in FIG. Referring to FIGS. 3 and 4, when an electromotive force 22 is applied from the outside A toward the element 21, the energy conversion unit 24 converts the electromotive force 22 into the power 23, and the information obtaining unit 25 determines the power using the power. The means 26, the information storage means 27, the information transmission means 28 and the reception means 29 are activated.

In this state, a signal 30 for inquiring the element 21 from the external device A or the external device B to hear information in the ink tank.
Send The input signal 30 is a signal for asking the element whether ink is still remaining in the ink tank, and is received by the receiving means 29 (step S21 in FIG. 4). Then, the determining means 26 determines that the information obtaining means 2
5, the information in the ink tank, for example, the remaining amount of ink,
Information on ink type, temperature, pH, etc. is obtained (Fig. 4
Step S22), and the obtained tank internal information and the conditions for referring to the information are read from the information storage means 27 (Step S23 in FIG. 2), and it is determined whether the obtained tank internal information satisfies the set condition (FIG. 4) Step S2
4).

In step S24, when it is determined that the obtained information does not satisfy the set condition, it is determined that the obtained information does not satisfy the setting condition. When it is determined that the obtained information satisfies the set condition, it is determined that the obtained information is satisfied. The information is transmitted to B or the external C (steps S25 and S26). At this time, the obtained information may be transmitted together with the determination result. This transmission is performed by converting the power obtained by the energy conversion into information for transmitting the information in the ink tank to the outside by the information transmitting means 28. The energy to be transmitted can use a magnetic field, light, shape, color, radio wave, sound, etc., and is changed according to the determination result. 2 ml or less, or the pH of the ink has changed, etc.)
The transmission method may be changed.

The input signal 3 from the external A or the external B
An electromotive force may also be applied to the element 21 together with 0. For example, when the electromotive force is electromagnetic induction, a signal for asking about the remaining amount of ink is provided, and when the electromotive force is light, a signal for asking pH is given separately. May be.

According to the present embodiment, since it has a function of receiving an external signal, in addition to the effects of the first embodiment, it is possible to respond to questions with various types of external signals. It is possible to exchange information between the element and the outside.

Although the device suitable for disposing in the ink tank has been described, the device is provided with information obtaining means. However, the device is not provided, and the information stored in the device in advance is input from an external input signal. A three-dimensional semiconductor element that outputs to the outside according to the above is the basic configuration of the present embodiment.

(Third Embodiment) FIG. 5 shows a third embodiment of the present invention.
FIG. 3 is a block diagram showing an internal configuration of the three-dimensional semiconductor device according to the embodiment and exchanges with the outside. The three-dimensional semiconductor element 31 of the form shown in FIG. 3 includes an energy conversion means 34 for converting an electromotive force 32 supplied from the outside A to the element 31 in a non-contact manner into an electric power 33, and an electric power obtained by the energy conversion means 34. And a buoyancy generating means 35 for generating buoyancy by using an ink tank.

In such a form, the element 31
When the electromotive force 32 is applied toward the power source, the energy conversion means 34 converts the electromotive force 32 into power 33, and the power 33
The buoyancy generating means 35 generates buoyancy by using, and causes the element 31 to float on the ink liquid surface. This buoyancy is not limited to the ink level, and the element may be located at a certain distance below the ink level in order to prevent the ink from being discharged in an empty state.

For example, FIG. 6 shows the positions of the elements floating in the ink in the ink tank together with changes in ink consumption. In the tank as shown in FIG. 6, as the ink of the negative pressure generating member 37 is led out from the ink supply port 36, the consumed ink is held by the negative pressure generating member 37. Thereby, the three-dimensional element 31 in the raw ink 38
Is located a certain distance below the ink level H,
It moves as the position of the ink level H decreases due to ink consumption.

FIG. 7 is a flowchart for confirming the position of the element 31 and determining the necessity of tank replacement. Referring to steps S31 to S34 in FIGS. 5 and 7, light is transmitted from the external A or the external B (for example, an ink jet recording apparatus) to the element 31, and the light is transmitted to the external A or the external B (for example, an ink jet recording apparatus). Alternatively, the position of the element 31 is detected by receiving the signal from the external C, and the ink jet recording apparatus determines whether or not the ink tank needs to be replaced based on the position of the element. To inform.

The position of the element can be detected by detecting the position of the element because the light-emitting means and the light-receiving means are provided opposite to each other, and the position of the element is confirmed by the fact that the element does not transmit light. What is confirmed by being reflected toward the light receiving means is used.

According to the present embodiment, even when the buoyancy required for the element changes depending on the environment in which the element is used, such as when the specific gravity of the liquid is different, the external electromotive force is converted by the energy conversion means to a desired value. Since it can be set so that the element always exists at the position, the element can be used regardless of the environment where the element is placed.

This embodiment is similar to the first and second embodiments described above.
It is also possible to appropriately combine the above embodiments.

(Fourth Embodiment) FIG. 8 shows a fourth embodiment of the present invention.
FIG. 9 is a conceptual diagram for describing a method of using the three-dimensional semiconductor element according to the embodiment.

This embodiment has a configuration in which a function of transmitting information to another element is added to the three-dimensional semiconductor element of the first or second embodiment, and a plurality of these elements are arranged in an object.

In the example of FIG. 8A, a plurality of three-dimensional semiconductor elements according to the first embodiment are arranged in an object, and when an electromotive force is supplied from the external A or the external B to each element. Each element obtains the surrounding environment information, the obtained information a of the element 41 is transmitted to the element 42, the obtained information a and b of the elements 41 and 42 are sequentially transmitted to the next element, and the last element 43 is all Is transmitted to the external A or the external B.

In the example of FIG. 8B, a plurality of three-dimensional semiconductor elements according to the second embodiment are arranged in an object, and each element is supplied with electromotive force from external A or external B. When a predetermined question by a signal is input from the external A or the external B to the element 53, for example, the element 51 or 52 corresponding to the content of the question obtains information corresponding to the question and makes an answer. Questions and answers are sequentially transmitted to other elements,
A response is sent from the desired element 53 to the external A or the external B or the external C.

In the example of FIG. 8C, a plurality of three-dimensional semiconductor elements according to the second embodiment are arranged in an object, and each element is supplied with an electromotive force from external A or external B. When a certain signal is input from the external A or the external B to the element 63, for example, the signal is sequentially transmitted to the element 62 and the element 61, and the element 63 performs display on the external A, the external B, or the external C. .

In the examples shown in FIGS. 8A to 8C, one of the plurality of three-dimensional semiconductor elements provided with the buoyancy generating means of the third embodiment may be used.

FIG. 9 shows the first and second ink tanks and the ink jet head connected thereto, respectively.
Alternatively, an example in which a three-dimensional semiconductor element obtained by appropriately combining the third embodiment is arranged is shown. In this example, a three-dimensional semiconductor element 71 having the buoyancy generating means of the third embodiment and a function of transmitting information to another element 79 is added to the first embodiment. It is arranged at a desired position. On the other hand, the recording head 78 which discharges the ink supplied through the liquid path 75 and the liquid chamber 76 connected to the ink supply port 74 of the ink tank 72 from the discharge port 77 for printing has an ID function (authentication function). The second
The three-dimensional semiconductor element 79 according to the embodiment is arranged. The power supply to the element 79 may be performed by contact between an electrode portion arranged on the element surface and a contact portion on an electric board for driving the recording head 78.

When an electromotive force is supplied to each of the elements 71 and 79 from the outside, the element 71 in the ink obtains, for example, information on the remaining amount of ink, and the element 79 on the recording head side obtains, for example, the remaining amount of ink for tank replacement. The ID information for determining the amount is transmitted to the element 71. Then, the element 71 compares the acquired remaining ink amount with the ID, and instructs the element 79 to notify the outside of the tank replacement only when they match. The element 79 receives this and transmits a signal notifying the tank replacement to the outside, or outputs a sound or light appealing to human eyes or hearing.

As described above, by arranging a plurality of elements in an object, it is possible to set complicated information conditions.

In the example shown in FIGS. 8 and 9, the configuration is such that an electromotive force is supplied to each of the three-dimensional semiconductor elements.
The configuration is not limited to this, and a configuration may be used in which the electromotive force supplied to a certain element is sequentially transmitted to another element together with information. For example, as shown in FIG. 10, a three-dimensional semiconductor element 81 in which the buoyancy generating means of the third embodiment, the function of transmitting information to other elements, and the function of supplying electromotive force are added to the first embodiment.
The buoyancy generating means of the third embodiment and the three-dimensional semiconductor elements 82 having the function of transmitting information to other elements and the function of supplying an electromotive force to the other elements are the same as those of FIG. At the desired position in the ink 73 of the ink tank 72. On the other hand, the recording head 78 connected to the ink tank 72 has a second function provided with an ID function (authentication function).
The three-dimensional semiconductor element 83 according to the embodiment is arranged. The power supply to the element 83 may be performed by contact between an electrode portion arranged on the element surface and a contact portion on an electric board for driving the recording head 78.

When an electromotive force is supplied to the element 81 from the outside, the element 81 in the ink obtains, for example, information on the remaining amount of the ink, compares this information with internal prescribed conditions, and transmits the information to other elements. When necessary, the obtained ink remaining amount information is transmitted to the element 82 together with the electromotive force for operating the element 82. The element 82 to which the electromotive force is supplied receives the ink remaining amount information transmitted from the element 81 and obtains, for example, information on the pH of the ink, and causes the element 83 on the recording head side to operate the element 83. To communicate. Then, the element 83 on the recording head side supplied with the electromotive force transmits, to the element 82, ID information for determining the remaining amount of ink or the pH of ink for tank replacement, for example. And element 8
No. 2 compares the acquired ink remaining amount information and pH information with the ID, and only when they match, instructs the element 83 to notify the outside of the tank replacement of the element replacement. The element 83 receives this and transmits a signal notifying the tank replacement to the outside, or outputs a sound or light appealing to human eyes or hearing. in this way,
A method of supplying an electromotive force together with information from one element to another element is also conceivable.

It is conceivable that the recording head 78 causes ink to foam in the liquid path by the heat of an electrothermal conversion element such as a heater, and discharges the ink from a minute opening communicating with the liquid path by the bubble growth energy. Can be

(Other Embodiments) FIGS. 11 to 14 show examples of the configuration of an ink tank to which the three-dimensional semiconductor element of the above-described embodiment can be applied. An ink tank 501 shown in FIG. 11 has a flexible ink bag 502 containing ink inside a housing 503 and a rubber stopper 5 fixed to the housing 503.
04, the bag mouth 502a is closed, and a hollow needle 505 for drawing out ink pierces the rubber stopper 504 to communicate with the inside of the bag, thereby supplying ink to an unillustrated inkjet head. The three-dimensional semiconductor element 506 of the present invention can be arranged in the ink bag 502 of such an ink tank 501.

The ink tank 511 shown in FIG.
In the figure, an ink jet head 515 for ejecting ink toward the recording paper S and performing recording is attached to an ink supply port 514 of a housing 512 containing the ink 513.
The three-dimensional semiconductor element 516 of the present invention can be arranged in the ink 513 in such a tank 511.

The ink tank 521 shown in FIG. 13 is a tank similar to the tank shown in FIGS. 6, 9 and 10, and has a completely sealed first chamber for storing the ink 522,
It has a second chamber in the atmosphere communication state for accommodating the negative pressure generating member 523, and a communication path 524 for communicating the first and second chambers at the bottom of the tank. When ink is consumed from the ink supply port 525 on the second chamber side, the air 522 in the first chamber is led out to the second chamber instead of the air entering the first chamber from the second chamber side. In the tank 521 having such a configuration, the three-dimensional semiconductor elements 526 and 527 of the present invention may be arranged in the first chamber and the second chamber, respectively, and information about ink in each of the divided chambers may be exchanged.

The ink tank 531 shown in FIG.
Is an ink-jet head 5 that houses a porous member 532 holding ink and uses the stored ink for recording.
33 is attached. Tank 5 having such a configuration
In the same manner as in the tanks shown in FIGS. 9 and 10, the three-dimensional semiconductor elements 534 and 535 of the present invention are disposed on the ink tank side and the inkjet head side, respectively, and the ink in each of the divided components is also provided. Information may be exchanged.

Next, FIG. 15 is a schematic diagram showing an example of the configuration of an ink jet recording apparatus equipped with an ink tank provided with the three-dimensional semiconductor element of the present invention. A head cartridge 601 mounted on the ink jet recording apparatus 600 shown in FIG. 15 has a liquid discharge head for discharging ink for print recording, and FIGS. 11 to 14 for holding liquid supplied to the liquid discharge head. And an ink tank as shown. Further, a unit 622 for supplying an electromotive force as external energy to the three-dimensional semiconductor element disposed in the ink tank and a unit (not shown) for bidirectionally communicating information with the element are provided in the recording apparatus 600. ing.

As shown in FIG. 15, the head cartridge 601 engages with the spiral groove 606 of the lead screw 605 rotating via the driving force transmission gears 603 and 604 in conjunction with the forward and reverse rotation of the drive motor 602. Is mounted on a carriage 607. The head cartridge 601 is moved by the power of the drive motor 602 to the carriage 6.
07 is reciprocated along the guide 608 in the directions of arrows a and b. The inkjet recording apparatus 600 includes a recording medium transport unit (not shown) that transports a printing paper P as a recording medium that receives a liquid such as ink discharged from the head cartridge 601. The paper pressing plate 610 of the print paper P conveyed on the platen 609 by the recording medium conveying means presses the print paper P against the platen 609 in the moving direction of the carriage 607.

Near the one end of the lead screw 605, photocouplers 611 and 612 are provided. The photocouplers 611 and 612 are
07, the photocouplers 611 and 6
This is a home position detecting means for confirming the presence in the area No. 12 and switching the rotation direction of the drive motor 602. In the vicinity of one end of the platen 609, a support member 613 that supports a cap member 614 that covers the front surface of the head cartridge 601 having the discharge port is provided. In addition, an ink suction unit 615 that sucks ink that has been idly discharged from the head cartridge 601 and accumulated inside the cap member 614 is provided. The ink suction unit 615 performs suction recovery of the head cartridge 601 through the opening of the cap member 614.

The ink jet recording apparatus 600 is provided with a main body support 619. The moving member 618 is attached to the main body support 619 in the front-rear direction, that is, the carriage 6.
It is supported so as to be movable in a direction perpendicular to the direction of movement 07. The cleaning blade 617 is attached to the moving member 618. Cleaning blade 6
Reference numeral 17 is not limited to this form, and may be another form of a known cleaning blade. Further, the ink suction means 6
15 is provided with a lever 620 for starting suction in the suction recovery operation by the lever 15. The lever 620 moves with the movement of the cam 621 engaging with the carriage 607, and the driving force from the driving motor 602 switches the clutch. The movement is controlled by a known transmission means such as the like. An ink jet recording control unit for giving a signal to a heating element provided in the head cartridge 601 and controlling the driving of each mechanism described above is provided on the recording apparatus main body side.
It is not shown in FIG.

In the ink jet recording apparatus 600 having the above-described structure, the head cartridge 601 reciprocates over the entire width of the print sheet P with respect to the print sheet P conveyed on the platen 609 by the recording medium conveying means. When a drive signal is supplied from a drive signal supply unit (not shown) to the head cartridge 601 during this movement, ink (recording liquid) is ejected from the liquid ejection head unit to the recording medium in accordance with the signal, and recording is performed. Done.

[0092]

Next, a preferred embodiment in which the three-dimensional semiconductor device of the present invention is arranged in an ink tank will be described in more detail.

First, information obtaining means applicable to the three-dimensional semiconductor device of the present invention will be described as an example. When the three-dimensional semiconductor element arranged in the ink tank is made of spherical silicon, the information obtaining means described in the above embodiment includes (1) forming a SiO ₂ film or a SiN film as an ion-sensitive film; Sensors that detect the pH of ink, (2) pressure sensors that have a diaphragm structure and detect changes in pressure in the tank, and (3) photodiodes that convert light into heat energy and have a pyroelectric effect And (4) a sensor that detects the presence or absence of ink based on the amount of water in the tank using the conductive effect of the material.

Next, specific examples of energy conversion means applicable to the three-dimensional semiconductor device of the present invention will be described. FIG. 16 is a view for explaining the principle of power generation of the energy conversion means which is a component of the three-dimensional semiconductor device of the present invention.

[0095] In FIG. 16, adjacent to the coil L _a of the external resonant circuit 101, the conductive coil L of oscillation circuit 102
It was placed, the electric current I _a in the coil L _a via the external resonance circuit 101, the magnetic flux B that penetrates the coil L of oscillation circuit 102 by the current I _a generated. Here, when the current _Ia is changed, the magnetic flux B passing through the coil L changes, so that an induced electromotive force V is generated in the coil L. Therefore, the oscillating circuit 102 as energy conversion means is formed in the spherical silicon, and the external resonance circuit 101 is provided outside the element, for example, in an ink jet recording apparatus, and the conductor coil L of the oscillation circuit 102 on the element side and the resonance circuit 101 outside the element are used. by the coil L _a is disposed to be adjacent, in the induced electromotive force by electromagnetic induction from the outside, it is possible to generate electric power for operating the device.

Further, the coil L having the number of turns N of the oscillation circuit 102 built in the spherical silicon as energy conversion means.
Flux B passing through the is proportional to the product of number of turns N _a and current I _a of the coil L _a of the external resonant circuit 101, a proportional constant as k,

[0097]

[Number 1] _{B = k * N a * I} a electromotive force V generated in the coil L is

[0098]

[Number 2] V = -N {dB / dt} = -kN a N {dI a / dt} = -M {dI a / dt} where magnetic flux B is the magnetic permeability of the magnetic core of the coil mu _a, If the magnetic field is H,

[0099]

Equation 3] _{B = μ a H (z)} = {μ a N a I a r a 2/2 (r a 2 + z 2) becomes ^3/2. Here, z indicates the distance between the coil of the external resonance circuit and the coil formed in the spherical silicon.

The mutual inductance of the equation: M is

[0101]

The Equation 4] _{M = {μN / μ a I} a} ∫ s B · dS = {μμ a r a 2 N a NS / 2μ 0 (r a 2 + z 2) 3/2}. Here, μ ₀ is the magnetic permeability in vacuum.

Then, the impedance: Z of the transmitting circuit built in the spherical silicon is:

[0103]

Equation 5] is expressed as Z (ω) = R + j {ωL- (1 / ωC)}, the external resonance circuit impedance: Z _a is

[0104]

[6] _{Z a (ω) = R a} + jωL a - a ^{{ω 2 M 2 / Z (} ω)}. Here, J represents magnetization. The impedance: Z ₀ when this external resonance circuit resonates (when the current value: _Ia becomes maximum) is

[0105]

Z ₀ (ω ₀ ) = R _a + jL _a ω ₀ − (ω ₀ ² M ² / R), and the phase delay of this resonance circuit: φ is

[0106]

Tan φ = {jL _a ω ₀ − (ω ₀ ² M ² / R)} / R

Then, the resonance frequency of this external resonance circuit:
f ₀ is

[0108]

It is obtained by f ₀ = 1 / 2π (LC) ^1/2 .

From the above relationship, when the impedance of the oscillation circuit 102 formed in the spherical silicon is changed in accordance with the change of the ink in the ink tank, the frequency of the external resonance circuit 101 is changed to change the frequency of the external resonance circuit 101. The above-mentioned change of the ink appears in the amplitude and phase difference of the impedance 101. Furthermore, this phase difference and amplitude
The remaining ink amount (that is, change in z) is also included.

For example, by changing the resonance frequency of the external resonance circuit 101, the output (impedance) from the oscillation circuit 102 formed in spherical silicon changes according to a change in the surrounding environment. The presence or absence of ink and the remaining amount of ink can be detected by detecting the ink property.

Therefore, the oscillation circuit formed in the spherical silicon is not only an energy conversion means for generating electric power, but also a means for detecting a change in ink in the tank due to the relationship between the oscillation circuit and the external resonance circuit. It can also be used as a unit.

Next, a method of manufacturing the three-dimensional semiconductor device of this embodiment will be described. FIG. 17 is a process chart for explaining an example of the method for manufacturing a three-dimensional semiconductor device of the present invention, and shows each step in a cross section passing through the center of the spherical silicon. Further, here, a manufacturing method in which the center of gravity of the spherical silicon is formed lower than the center, the upper part inside the spherical body is made hollow, and the hollow part is kept in an airtight state is taken as an example.

With respect to the spherical silicon shown in FIG.
As shown in FIG. 17B, the thermally oxidized Si
After the O ₂ film 202 is formed, patterning is performed using a photolithography process to form an opening 203 in a part of the SiO ₂ film as shown in FIG.

Then, as shown in FIG. 17D, only the upper silicon portion is removed by anisotropic etching using a KOH solution through the opening 203, and the cavity 204 is removed.
To form Thereafter, as shown in FIG.
Using a CVD method, a SiN film 2 is formed on the inner and outer surfaces of the three-dimensional device.
05 is formed.

Further, as shown in FIG. 17F, a Cu film 20 is formed on the entire surface of the three-dimensional device by using a metal CVD method.
6 is formed. Then, as shown in FIG. 17G, the Cu film 206 is formed by using a well-known photolithography process.
Is patterned to form a conductor coil L having a number of turns N which is a part of the oscillation circuit. Thereafter, the three-dimensional element in which the conductor coil L is formed is taken out of the vacuum device into the atmosphere, the upper opening 203 is closed with a sealing member 207 such as a resin or a plug, and the cavity 204 inside the spherical body is sealed. . By manufacturing in this manner, the three-dimensional semiconductor element made of silicon itself can have buoyancy without providing a means for generating buoyancy using electric power as in the third embodiment.

Further, a coil L formed on spherical silicon before manufacturing such a floating type three-dimensional semiconductor device is manufactured.
Other drive circuit elements use N-MOS circuit elements. FIG. 18 shows a schematic cross-sectional view of the N-MOS circuit element cut in a longitudinal direction.

According to FIG. 18, a P conductive Si substrate 40 is formed.
1, a P-Mos 450 is formed in the N-type well region 402 and an N-Mos 451 is formed in the P-type well region 403 by impurity introduction and diffusion such as ion plantation using a general Mos process. P-
Mos 450 and N-Mos 451 are formed through a gate insulating film 408 having a thickness of several hundred angstroms, respectively.
CVD to a thickness of 0 to 5000 angstroms
Gate wiring 415 of poly-Si deposited by the method
And a source region 405 and a drain region 406 into which N-type or P-type impurities are introduced.
The Mos-450 and the N-Mos 451 form a C-Mos logic.

N-Mos transistor 30 for driving elements
No. 1 is obtained by the steps of impurity introduction and diffusion.
It comprises a drain region 411, a source region 412, a gate wiring 413, and the like on the mold well substrate 402.

Here, N-Mo is used as an element driving driver.
When the s-transistor 301 is used, the distance L between the drain and the gate constituting one transistor is about 10 at minimum.
μm. One of the breakdowns of the 10 μm is the width of the source and drain contacts 417, and the width is 2 × 2 μm. However, actually, half of the width is used as an adjacent transistor. 2 μm. Other than the breakdown, two times the distance between the contact 417 and the gate 413
4 μm of × 2 μm and 4 μm of the width of the gate 413, for a total of 10 μm.

Between each element, 5000 angstroms or more and 1
An oxide film isolation region 453 is formed by field oxidation having a thickness of 0000 angstroms or less, and the elements are isolated. This field oxide film functions as the first heat storage layer 414.

After each element is formed, an interlayer insulating film 416 is formed.
Has a thickness of about 7,000 angstroms and has a PS
After being deposited with a G, BPSG film or the like and subjected to a flattening process or the like by heat treatment, wiring is performed by an Al electrode 417 serving as a first wiring layer via a contact hole. Thereafter, an interlayer insulating film 418 such as a SiO ₂ film was deposited by plasma CVD to a thickness of 10,000 to 15,000 angstroms, and a through hole was further formed.

This N-Mos circuit is formed before forming a floating type three-dimensional semiconductor element as shown in FIG.
The three-dimensional semiconductor device of the present invention is connected to the FeRAM as the information storage means, the oscillation circuit as the energy conversion means, the sensor section as the information acquisition means, and the like through the through holes.

As shown in FIG. 19A, the cell structure of the FeRAM, that is, the cell structure of the ferroelectric memory is such that a plate line (lower electrode) 352, a ferroelectric 350, and an upper electrode 351 are sequentially stacked. Is formed on a semiconductor substrate together with a bit line 353 and a word line 354. Using this cell structure, a 1T1C cell as shown in FIG. 19B and a 2T2C cell as shown in FIG. 19C can be formed.

In any state of the ink tank provided with the floating type three-dimensional semiconductor element of this embodiment, the oscillation circuit formed in the spherical silicon by the above-described method and the oscillation circuit shown in FIG. A stable magnetic flux (magnetic field) needs to work between the external resonance circuit. However, when floating in a liquid such as ink, the liquid surface may vibrate due to external vibration. Even in such a case, in order to maintain a stable state in the liquid, in this example, the center of gravity of the floating type three-dimensional semiconductor element is determined.

As shown in FIG. 20, when the ball-shaped semiconductor element 210 of this example is floated in a liquid,
In order to be in a balanced state as in (a), (1) buoyancy F = weight W of the object (2) buoyancy action line and weight action line (line passing through the center of gravity G)
It is necessary that the relationship that the match is established.

Then, as shown in FIG. 20B, when the liquid vibrates due to an external force and the three-dimensional semiconductor element 210 is slightly tilted from the balanced state, the center of the buoyancy moves, and the buoyancy and the weight are reduced. Become a couple.

Here, the line of action of the weight when in a balanced state (the dashed line in FIG. 20B) and the line of action of the buoyancy when tilted (the solid line in FIG. 20B). The intersection is called a metacenter, and the distance h between the metacenter and the center of gravity is called the height of the metacenter.

As in this example, since the metacenter of the three-dimensional semiconductor element 210 is at a position higher than the center of gravity, the couple (restoring force) acts in a direction to return to the original balanced position. This restoring force: T

[0129]

T = Whsinθ = Fhsinθ = ρgVhsinθ (> 0) Here, V is the volume of the liquid removed by the three-dimensional semiconductor element 210, and ρg is the specific weight of the three-dimensional semiconductor element 210.

In order to make the restoring force positive,
It is a necessary and sufficient condition that h> 0.

Then, from FIG. 20 (b),

[0132]

[Equation 11]

Is obtained. Here, I is the moment of inertia about the O axis. Therefore,

[0134]

(Equation 12)

The ball type semiconductor element 210
However, they are stably floating in the ink, which is a necessary condition for supplying a dielectric electromotive force from an external resonance circuit and performing bidirectional communication with communication means outside the element.

FIG. 21 is a schematic structural view of an ink tank using a three-dimensional semiconductor device according to the second embodiment of the present invention. The ink tank 541 shown in FIG.
Similarly to the first embodiment, the first chamber in which the ink 547 is housed in a completely sealed state, the second chamber in which the negative pressure generating member 546 is housed, and which is a negative pressure chamber, and the first chamber at the bottom of the tank. Second
And a communication path 548 for communicating the chambers. The ink in the second chamber is consumed from an ink supply port 549 formed in the wall of the second chamber on the side opposite to the communication passage 548 side. This ink tank 541
Then, the three-dimensional semiconductor elements 1 and 2 are arranged in the first chamber,
Three-dimensional semiconductor elements 3 and 4 are arranged in the second chamber.

As shown in FIG. 21A, the three-dimensional semiconductor element 2 is floating near the liquid surface of the ink 547 in the first chamber of the ink tank 541, and is supplied from an external resonance circuit outside the ink tank 541 to the electromagnetic resonance. An electromotive force due to induction can be induced, and a resonance frequency can be generated. On the other hand, the three-dimensional semiconductor element 1 fixed to the upper wall in the ink tank 541
Is to induce an electromotive force by electromagnetic induction from an external resonance circuit outside the ink tank 541, and
In addition to the reception of the resonance frequency signal generated from, the information is stored in the information storage means, and the resonance frequency is further generated, so that the information of the ink in the ink tank 541 can be transmitted to the outside.
In this case, although the functions of the three-dimensional semiconductor elements 1 and 2 are different, both may have the opposite function or both may have the same function.

Next, a method for detecting the amount of ink in the ink tank 541 will be described. By operating the three-dimensional semiconductor elements 1 and 2, the state of the ink in FIG. 21A is set as an initial state. In this state, by operating the three-dimensional semiconductor elements 1 and 2 in the same manner in the state of FIG. 21B where the amount of ink is reduced, the amount of ink can be detected. Here, FIGS. 21 (a) and (b)
Although the two points have been described, the ink amount can be sequentially detected by periodically operating the three-dimensional semiconductor elements 1 and 2. FIG. 22 shows the change of the ink amount at that time and the state of the output signal.

On the other hand, the ink 547 in the first chamber runs out,
The detection of the amount of ink in the second chamber (negative pressure generating chamber) accommodating the negative pressure generating member 546 will be described.

As shown in FIG. 21A, in the second chamber, the three-dimensional semiconductor elements 3 and 4 are fixed at predetermined positions in advance. For example, in the example shown in FIG.
Are fixed to the upper wall of the second room, and the three-dimensional semiconductor element 4 is fixed to the bottom surface of the second room. In the second chamber, the three-dimensional semiconductor element 3 is controlled by the amount of ink in the negative pressure generating member 546.
And the difference in the resonance frequency detected between 4 and 4. Second
If the signal output is set in advance so that the initial state in the chamber coincides with the end point of the first chamber, a signal output curve as shown in FIG. 22 can be obtained, and the amount of ink in the ink tank 541 can be constantly detected. Can be done.

As described above, by using a plurality of three-dimensional semiconductor elements, the amount of ink in the ink tank 541 can be detected, and in particular, the amounts of ink in the first chamber and the second chamber can be individually detected. . In addition, by using a plurality of three-dimensional semiconductor elements, it is possible to set an initial state especially in the second chamber, and by storing a state in which the ink in the ink tank 541 is full, a comparison with the state is made. (Differential detection), and more accurate ink amount detection becomes possible.

As described above, the three-dimensional semiconductor device of the present invention is operated using external energy,
It is required to determine the amount of ink in the ink tank and transmit accurate information to the outside at high speed. However, in order to stably apply energy to a recording head (ink tank) with operation from the outside, a high level of technology is required, and an element that operates with the lowest possible power is required. Further, a non-volatile memory which can hold information without constantly applying energy and can rewrite information as needed is required. Furthermore, the necessity of forming in a three-dimensional semiconductor device necessitates miniaturization. For this purpose, it is required to manufacture the semiconductor device by using a normal semiconductor process in the same manner as other devices, which results in cost reduction. It is also advantageous in terms of points.

In view of the above, the information storage means provided in the three-dimensional semiconductor device of the present invention is made of a ferroelectric material.
We found that FeRAM is optimal. A feature of the ferroelectric material used in FeRAM is that it has a memory function against electric fields, and by using this as a dielectric for a memory capacitor in a conventional DRAM, non-volatility can be maintained while maintaining the high speed of the DRAM. Can have. The fact that high-speed access is possible and that data is not erased even when the power supply is unstable because of the non-volatility are effective when a three-dimensional semiconductor element is used in an ink tank. By accumulating the accumulated information in the FeRAM in this manner, accurate information processing can be performed, and bidirectional signal exchange with an external device can be performed at a high speed and at a low voltage.

At the same time, ferroelectric materials generally have a high relative dielectric constant, and can form large-capacity capacitors. Therefore, wireless communication without wiring can be performed between the ink tank and the printing apparatus, and
This has the effect of increasing the degree of freedom of communication of the three-dimensional semiconductor element. Here, assuming that the inductance of the coil formed in the three-dimensional semiconductor element is L and the capacitance of the capacitor formed in the three-dimensional semiconductor element is C, the communication frequency f of the three-dimensional semiconductor element is obtained by the following equation.

[0145]

(Equation 13)

Therefore, if the ferroelectric film of the ferroelectric material of the information storage means is also used as a capacitor, the capacitance C of the three-dimensional semiconductor device can be increased, and The communication frequency of the semiconductor element can be reduced. Therefore, communication of the three-dimensional semiconductor element can be performed even at a low frequency, and the degree of freedom of communication is increased.

Next, the FeRAM as the information storage means of the present invention
A method for manufacturing a ferroelectric used in the method will be described.

FIG. 23 shows the ECR used in this manufacturing method.
It is the schematic which shows a plasma CVD apparatus.

In the manufacturing method described with reference to FIG.
(Ba-Sr) TiO ₃ (BS) as a constituent material of a ferroelectric thin film of FeRAM which is an information storage means of a three-dimensional semiconductor element
T: barium strontium titanate) and its ferroelectric film is formed by ECR plasma CVD.

Formed by ECR plasma CVD
Ba (DPM) is used for the material of the ferroelectric thin film._Two[bis-dipiva
loylmethanate barium], Sr (DPM)_Two, Ti (O-
i-C _ThreeH₇)_FourAnd O_TwoIs used. Ba (DPM)_Two
And Sr (DPM)_TwoAre high temperatures close to the melting point, respectively.
Then, as shown in FIG. 23, the apparatus uses Ar gas as a carrier.
Is supplied into the chamber 362. In addition, Ti (O-
i-C_ThreeH₇)_FourDepends on the carrier gas, Ar gas.
Supply into chamber 362 by hub ring
Is done. On the other hand, O_TwoGas is also supplied into the chamber 362.
It is. A ball is placed on the sample table 363 in the chamber 362.
Silicon is retained.

Next, a microwave of 2.54 GHz is introduced into the chamber 362 via the magnetic coil 361, and the above-mentioned material introduced into the chamber 362 is turned into plasma. As a result, those materials become the sample stage 363 holding the spherical silicon in the chamber 362.
And a ferroelectric thin film made of a ferroelectric material is formed on the surface of the spherical silicon on the sample table 363. In order to uniformly form a ferroelectric thin film on the surface of the spherical silicon, the film may be formed by rotating or moving the sample table 363.

In the above method, the ECR plasma C
The method of forming using the VD method has been described. However, the formation of the ferroelectric thin film is not limited to these manufacturing methods, and other than these, plasma CVD, thermal CVD, MOCV
It can be formed using a D (Molecular Organic CVD) method, a sputtering method, or the like.

As the material of the ferroelectric thin film, PZT (lead zirconate titanate:
[Solid solution of PbZrO ₃ and PbTiO ₃ ]): Pb-Zr
_{x-Ti1-xO 3, SBT} ( strontium bismuth _{tantalate): Sr-Bi 2 -Ta 2} O 9, SrTiO 3 (ST
O: strontium titanate), BaTiO ₃ (BT
O: barium titanate) or PLZT (PZT, ie, a metal oxide obtained by adding La to a solid solution of PbZrO ₃ and PbTiO ₃ ): (Pb, La)-(Zr, Ti) O ₃ can be used.

As a bidirectional communication method with the external communication means at this time, a wireless LAN system using a microwave band frequency or a wireless access system using a quasi-millimeter wave / millimeter wave band frequency can be applied.

Here, an outline of transmission and reception by the wireless LAN system will be described. Hereinafter, data transmission from the three-dimensional semiconductor element to the recording device will be described. Conversely, when data is transmitted from the recording device to the three-dimensional semiconductor element, a data ID is allocated to each side, and identification is thereby performed.

The three-dimensional semiconductor device on the transmitting side has a line monitoring unit, a data handling unit, an acknowledgment check unit, and an error processing unit. The recording unit on the receiving side has a data handling unit, an acknowledgment unit, An error processing unit, a display unit, and the like are provided.

FIG. 24 is a flowchart for the three-dimensional semiconductor device on the transmitting side. In the case of transmitting data, after performing initial setting according to a determined transmission protocol, an address on the receiving side is set, and data is transmitted. If a signal collision occurs during transmission, or if no acknowledgment is returned from the designated receiving-side device, retransmission is performed. During operation, the status of the line and the presence / absence of an acknowledgment are displayed on a display unit provided in a recording device or the like on the receiving side to prompt the user to make an appropriate determination.

FIG. 25 shows a flowchart in the recording apparatus on the receiving side. This receiver always monitors the line,
After confirming its own address, data is fetched from the line and stored in a buffer in the main memory. If the block mark of every 16 bytes cannot be confirmed during reception, or if the checksums do not match in the error detection processing after the end of reception, the reception is stopped as a reception error, and the line is monitored again. Wait for the header to arrive. If the reception was successful without error, the received content is displayed on the display unit.

In the three-dimensional semiconductor device of the embodiment described above, electromagnetic induction by a coil is used as external energy for supplying electric power for starting the device. However, light may be used in addition to this. In the case of converting light and dark into an electric signal, power can be generated by a photoconductive effect using a material whose resistance value changes by light irradiation (for example, a photoconductor). As the photoconductor, for example, Cd
Binary alloys / ternary alloys such as S, InSb, Hg _0.8 Cd _0.2 Te, and GaAs, Si, Va—Si are used. Further, when heat is used as an electromotive force, power can be generated from the radiant energy of a substance by a quantum effect.

The three-dimensional semiconductor device of this embodiment supplies ink contained in a detachably mounted ink tank to an ink jet recording head, and prints on recording paper with ink droplets ejected from the recording head. Detect ink information and tank information about the inkjet printer, transmit the information to the inkjet printer,
The present invention is preferably applied to an ink jet printer that controls the printer in an optimal manner or controls the state of the tank in an optimal manner.

In this embodiment, the exterior of the ink jet recording apparatus is not shown. However, when the exterior cover is translucent or the like, and the ink tank is translucent, the exterior cover is used. When light is used as the transmission means, the user can see the light of the tank, so that it is easy to understand, for example, "I want to replace the tank", and the user can be motivated to replace the tank. (Conventionally, the buttons on the main body of the apparatus shine, but since they also have several display functions, it is difficult for the user to know what they want to know even if they shine.)

[0162]

According to the three-dimensional semiconductor device of the present invention, means for converting external energy, means for obtaining external environmental information operated by the energy converted by the energy converting means, information storing means, and obtained information The information storage means is provided with a determination means for comparing and determining the stored information with the information storage means for displaying or transmitting the obtained information to the outside. By taking advantage of the above, it is possible to efficiently obtain surrounding environment information. Furthermore, it has a communication means for receiving a signal from the outside, obtains information according to the received signal, and transmits the result of the comparison judgment with the stored information to the outside together with the obtained information. Non-volatile memory FeRA
By accumulating the accumulated information in M, accurate information processing can be performed, and bidirectional signal exchange with an external device can be driven at high speed and at low voltage. Furthermore, by utilizing the ferroelectric material of FeRAM as a capacitor, the capacitance of the three-dimensional semiconductor element can be increased, and the degree of freedom of communication of the three-dimensional semiconductor element when the three-dimensional semiconductor element communicates with the outside. Will be higher.

By arranging a plurality of such three-dimensional semiconductor elements in the ink tank, information on the ink contained in the ink tank, pressure in the tank, and the like can be transferred in real time to an external device such as an ink jet recording apparatus. It is possible to communicate. For example, in order to control the amount of negative pressure in the tank that changes momentarily with ink consumption and to stabilize inkjet discharge, a size that is required from high speed, low power consumption, and space constraints is required.
In these respects, it is advantageous to store the stored information in a FeRAM made of a ferroelectric.

Further, since external energy for operating the three-dimensional semiconductor element is supplied in a non-contact manner, an energy source for starting the element is provided in the ink tank, and a wiring for supplying the energy is connected to the element. It can be used in places where it is not necessary to connect directly to the outside and it is difficult to provide direct wiring to the outside.

For example, when the starting energy of the element is electric power, the conductor coil of the oscillation circuit is formed as an external energy conversion means so as to be wound around the outer surface of the three-dimensional semiconductor element, so that it can be connected to an external resonance circuit. Electric power can be supplied to the element in a non-contact manner by generating electric power in the conductor coil by electromagnetic induction between them.

In this case, since a coil is wound around the outer surface of the element, the magnitude of the inductance of the coil changes according to, for example, the remaining amount of ink, the ink concentration, and the ink pH in the ink tank. Therefore, since the oscillation circuit changes the oscillation frequency in accordance with the change in the inductance, it is also possible to detect the remaining amount of the ink in the ink tank and the like based on the change in the changed oscillation frequency.

The three-dimensional semiconductor element has a cavity for floating in a liquid and the center of gravity of the element is formed below the center of the element. The print head and ink tank mounted on the device operate serially, and even if the ink in the ink tank swings up, down, left, and right, the information and information about the ink are stably suspended in the ink in the ink tank. , The pressure in the tank and the like can be accurately detected. In addition, the coil of the oscillation circuit formed on the element is held at a stable position with respect to the coil of the external resonance circuit, and stable two-way communication is always possible.

[Brief description of the drawings]

FIG. 1 is a block diagram showing an internal configuration of a three-dimensional semiconductor device according to a first embodiment of the present invention and an exchange with the outside.

FIG. 2 is a flowchart for explaining the operation of the device shown in FIG.

FIG. 3 is a block diagram showing an internal configuration of a three-dimensional semiconductor device according to a second embodiment of the present invention and an exchange with the outside.

FIG. 4 is a flowchart for explaining the operation of the device shown in FIG. 3;

FIG. 5 is a block diagram showing an internal configuration of a three-dimensional semiconductor device according to a third embodiment of the present invention and an exchange with the outside.

FIG. 6 is a diagram showing the positions of the elements having the configuration shown in FIG. 3 floating in the ink in the ink tank, together with changes in ink consumption.

FIG. 7 is a flowchart for confirming the position of the element having the configuration shown in FIG. 3 and determining the necessity of tank replacement.

FIG. 8 is a conceptual diagram for explaining a method of using a three-dimensional semiconductor device according to a fourth embodiment of the present invention.

FIG. 9 is a diagram illustrating an example in which a three-dimensional semiconductor element obtained by appropriately combining the first, second, or third embodiment is disposed in an ink tank and an inkjet head connected to the ink tank.

FIG. 10 is a diagram illustrating a configuration example in which an electromotive force supplied to a certain three-dimensional semiconductor element is sequentially transmitted to another three-dimensional semiconductor element together with information in an ink tank and an ink-jet head connected to the ink tank.

FIG. 11 is a diagram showing an example of an ink tank suitable for disposing a three-dimensional semiconductor element according to various embodiments of the present invention.

FIG. 12 is a diagram showing an example of an ink tank suitable for disposing a three-dimensional semiconductor element according to various embodiments of the present invention.

FIG. 13 is a diagram showing an example of an ink tank suitable for disposing a three-dimensional semiconductor element according to various embodiments of the present invention.

FIG. 14 is a diagram showing an example of an ink tank suitable for disposing a three-dimensional semiconductor element according to various embodiments of the present invention.

FIG. 15 is a perspective view showing an example of an ink jet recording apparatus equipped with the ink tank shown in FIGS.

FIG. 16 is a diagram for explaining the principle of power generation of energy conversion means which is a component of the three-dimensional semiconductor device of the present invention.

FIG. 17 is a process diagram illustrating an example of a method for manufacturing a three-dimensional semiconductor device of the present invention.

FIG. 18 shows an NM used for the three-dimensional semiconductor device of the present invention.
FIG. 3 is a schematic cross-sectional view of the OS circuit element cut in a longitudinal direction.

FIG. 19 is a diagram showing a cell structure of a ferroelectric memory.

20 is a diagram for explaining conditions for maintaining a stable state in a liquid of the three-dimensional semiconductor element manufactured by the method shown in FIG.

FIG. 21 is a diagram showing an example of an ink tank suitable for disposing a three-dimensional semiconductor element according to various embodiments of the present invention.

FIG. 22 is a diagram for explaining detection of an ink amount according to an embodiment of the present invention.

FIG. 23 is an ECR plasma CV used for manufacturing a ferroelectric material of FeRAM in the three-dimensional semiconductor device of the present invention.
It is the schematic which shows D apparatus.

FIG. 24 is a diagram showing a flowchart in a transmitting-side three-dimensional semiconductor element when bidirectional communication is performed between the three-dimensional semiconductor element and the recording device according to the embodiment of the present invention.

FIG. 25 is a diagram showing a flowchart in the recording device on the receiving side when bidirectional communication is performed between the three-dimensional semiconductor element and the recording device according to the embodiment of the present invention.

FIG. 26 is a diagram showing an ink remaining amount detecting device described in JP-A-6-143607.

FIG. 27 is a diagram illustrating an ink remaining amount detection device described in Japanese Patent No. 2947245.

[Explanation of symbols]

11, 21, 31, 41 to 43, 51 to 53, 61 to 6
3, 71, 79, 81 to 83 Three-dimensional semiconductor device 12, 22, 32 Electromotive force 13, 23, 33 Power 14, 24, 34 Energy conversion means 15, 25 Information acquisition means 16, 26 Judgment means 17, 27 Information storage Means 18, 28 Information transmitting means 29 Receiving means 30 Input signal 35 Buoyancy generating means 36 Ink supply port 37 Negative pressure generating member 72 Ink tank 73 Ink 74 Ink supply port 75 Liquid path 76 Liquid chamber 77 Discharge port 78 Ink jet recording head 101 External Resonance circuit 102 Oscillation circuit 201 Spherical silicon 202 SiO ₂ film 203 Opening 204 Cavity 205 SiN film 206 Cu film 207 Sealing member 210 Ball-shaped semiconductor element 350 Ferroelectric 351 Upper electrode 352 Plate line (lower electrode) 353 Pit line 354 Word line ( Over gate electrode) 361 a magnetic coil 362 chamber 363 sample stage

Continued on the front page (72) Inventor Yoshiyuki Imanaka 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Mochizuki Noga 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Takaaki Yamaguchi 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Hiroyuki Ishinaga 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72 ) Inventor Ryoji Inoue 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term (reference) 2C056 EA23 EA29 EB20 EB29 EB34 EB45 EB51 EB52 EB59 EC26 FA03 FA10 HA51 KC11 KC13 KC14 KD06 5F083 AD01 FR02 NA03 ZA01 ZA12

Claims (21)

[Claims] 1. Energy conversion means for converting external energy into different types of energy, information obtaining means for obtaining external environmental information, and information for comparing with information obtained by the information obtaining means. Information storing means, determining means for comparing information obtained by the information obtaining means with information corresponding to the information stored in the information storing means, and determining necessity of information transmission; And information transmitting means for externally displaying or transmitting the information obtained by the information obtaining means when it is determined that the information obtaining means is required, and the information obtaining means, the information storage means, the determining means,
And a three-dimensional semiconductor device in which the information transmitting means operates with the energy converted by the energy converting means, and the information storing means is FeRAM made of a ferroelectric. 2. An energy conversion means for converting external energy into energy of a different type, a receiving means for receiving a signal from the outside, an information storing means for storing information, and an information storage means for storing information received by the receiving means. Information transmitting means for displaying or transmitting the information of the information storing means in response thereto, wherein the receiving means, the information storing means, and the information transmitting means are operated by the energy converted by the energy converting means, A three-dimensional semiconductor element in which the information storage means is a FeRAM made of a ferroelectric substance. 3. An energy conversion unit for converting external energy into energy of a different type, a receiving unit for receiving a signal from the outside, an information obtaining unit for obtaining external environmental information, and the information obtaining unit. Information storage means for storing information for comparison with obtained information; and causing the information obtaining means to obtain external environment information in response to a signal received by the receiving means, and obtaining the obtained information and the information storing means corresponding thereto. Comparing the information with the information stored in the storage device, and determining whether or not the obtained information satisfies a predetermined condition; and an information transmitting unit that externally displays or transmits a result of the determination by the determining unit. The receiving unit, the information storage unit, the determination unit, and the information transmission unit use the energy converted by the energy conversion unit. Dynamic and, the information storage means, three-dimensional type semiconductor device is a FeRAM formed of a ferroelectric. 4. A ferroelectric material comprising PZT, P
The three-dimensional semiconductor device according to claim 1, wherein the three-dimensional semiconductor device is LZT, SBT, SrTiO ₃ , BaTiO ₃ , or (Ba—Sr) TiO ₃ . 5. The information transmission means according to claim 1, wherein said information transmission means also displays or transmits the information to another three-dimensional semiconductor device.
Item 3. The three-dimensional semiconductor device according to item 1. 6. The three-dimensional semiconductor device according to claim 2, wherein said receiving means also receives a signal from another three-dimensional semiconductor device. 7. The three-dimensional semiconductor device according to claim 1, having a function of applying an electromotive force to another three-dimensional semiconductor device. 8. The three-dimensional semiconductor device according to claim 1, wherein the external energy converted by the energy conversion means is supplied in a non-contact manner. 9. The three-dimensional semiconductor device according to claim 1, wherein the energy converted by said energy conversion means is electric power. 10. The information transmitting means converts the electric power converted by the energy converting means into a magnetic field, light, shape, color, radio wave, or sound, which is energy for displaying or transmitting information to the outside. The three-dimensional semiconductor device according to claim 9. 11. The three-dimensional semiconductor device according to claim 9, wherein the external energy converted by the energy conversion means into electric power is electromagnetic induction or electromotive force due to heat, light, or radiation. 12. The three-dimensional semiconductor device according to claim 1, wherein said energy conversion means has a conductor coil for generating electric power by electromagnetic induction with an external resonance circuit and an oscillation circuit. . 13. The three-dimensional semiconductor device according to claim 12, wherein the conductor coil is formed so as to be wound around the outer surface of the three-dimensional semiconductor device. 14. The three-dimensional semiconductor device according to claim 1, further comprising buoyancy generating means for generating buoyancy using energy converted by said energy conversion means. 15. The three-dimensional semiconductor device according to claim 1, further comprising a cavity for floating at a predetermined position in the liquid surface or in the liquid. 16. The method according to claim 15, wherein the center of gravity of the three-dimensional semiconductor element floating in the liquid is located below the center of the element and does not rotate in the floating liquid and performs a stable swing. The three-dimensional semiconductor device according to the above. 17. The three-dimensional semiconductor device according to claim 16, wherein the metacenter of the three-dimensional semiconductor device is always above the center of gravity of the three-dimensional semiconductor device. 18. An ink tank having a plurality of the three-dimensional semiconductor elements according to claim 1. Description: 19. At least one of the plurality of three-dimensional semiconductor elements floats at a predetermined level in the ink surface or in the ink in the ink tank, and the plurality of three-dimensional semiconductor elements are configured to store the information. The information obtained by the obtaining means is compared with the information stored in the information storage means corresponding thereto, and after the necessity of information transmission is determined by the determining means, the determination result by the determining means is transmitted from the information transmitting means. 19. The ink tank according to claim 18, wherein the ink tank outputs to the outside. 20. Among the plurality of three-dimensional semiconductor elements,
Other three-dimensional semiconductor elements are fixed to the ink tank except for the three-dimensional semiconductor elements floating on the liquid surface of the ink in the ink tank, and the plurality of three-dimensional semiconductor elements are fixed to the ink tank. The other three-dimensional semiconductor element is for detecting a remaining amount of ink in the ink tank by receiving a signal from the three-dimensional semiconductor element floating on a liquid surface of the ink. 20. The ink tank according to 19. 21. An ink jet recording apparatus equipped with the ink tank according to claim 18.