JP2001345454A5 - - Google Patents
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- Publication number
- JP2001345454A5 JP2001345454A5 JP2001086805A JP2001086805A JP2001345454A5 JP 2001345454 A5 JP2001345454 A5 JP 2001345454A5 JP 2001086805 A JP2001086805 A JP 2001086805A JP 2001086805 A JP2001086805 A JP 2001086805A JP 2001345454 A5 JP2001345454 A5 JP 2001345454A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001086805A JP2001345454A (ja) | 2000-03-27 | 2001-03-26 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000087660 | 2000-03-27 | ||
| JP2000-87660 | 2000-03-27 | ||
| JP2001086805A JP2001345454A (ja) | 2000-03-27 | 2001-03-26 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001345454A JP2001345454A (ja) | 2001-12-14 |
| JP2001345454A5 true JP2001345454A5 (enExample) | 2008-02-28 |
Family
ID=26588513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001086805A Withdrawn JP2001345454A (ja) | 2000-03-27 | 2001-03-26 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001345454A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4986337B2 (ja) * | 2000-06-02 | 2012-07-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100454751B1 (ko) | 2002-10-21 | 2004-11-03 | 삼성에스디아이 주식회사 | 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0677484A (ja) * | 1992-08-27 | 1994-03-18 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
| JP3778456B2 (ja) * | 1995-02-21 | 2006-05-24 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型薄膜半導体装置の作製方法 |
| JP3924828B2 (ja) * | 1996-12-26 | 2007-06-06 | セイコーエプソン株式会社 | 結晶性半導体膜の製造方法、および薄膜トランジスタの製造方法 |
| JP4386978B2 (ja) * | 1998-08-07 | 2009-12-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2001
- 2001-03-26 JP JP2001086805A patent/JP2001345454A/ja not_active Withdrawn