JP2001343308A - Sample processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact sample processing device. SOLUTION: A target 22 is disposed in the upper part near the central part of a chamber 21, and an ion gun 24 for irradiating the target 22 with ions is provided. An upper electrode 26 and a lower electrode 27 are arranged mutually opposedly with a space below under the target 22. The upper electrode 26 is supported by a shutter 29 through an insulating member 28. Numerical number 30 shows a shutter driving mechanism. The lower electrode 27 is supported by a lower electrode support block 31 through an insulating member 32. An alternating current power supply 33 are provided for applying alternating voltage between both electrodes. A sample 40 is disposed on the lower electrode 27.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sample processing apparatus for an electron microscope or the like.

[0002]

2. Description of the Related Art Observing a sample with a scanning electron microscope,
Or, when analyzing the sample with an electron probe microanalyzer, etc., when the sample is an insulator,
A charging phenomenon occurs on the surface of the sample, and obstructs observation or analysis of the sample due to noise based on the charging phenomenon. Therefore, when the sample is an insulator, a process of coating the sample with a conductive film is performed in advance.

[0003] If a fat or oil or an oxide film adheres to the surface of the sample, the observation or analysis of the surface of the sample itself is hindered. Therefore, before the coating process,
A process for etching the sample (a cleaning process for removing the deposit from the sample surface) is performed.

[0004] When an etching process is performed on a sample and then a coating process is performed, usually, for example, the sample is set in a chamber of a dry etching apparatus, and then the sample is once etched. After the sample is taken out of the chamber to the outside of the chamber, the sample is set in the chamber of the coating apparatus to perform coating.

FIG. 1 shows an example of an etching apparatus. In the figure, reference numeral 1 denotes a chamber, and an upper electrode 2 and a lower electrode 3 are opposed to each other with a space therebetween at an upper portion and a lower portion substantially at the center of the chamber. Reference numeral 4 denotes an upper electrode support, which supports the upper electrode 2 via an insulating member 5. A lower electrode support 6 supports the lower electrode 3 via an insulating member 7. Reference numeral 8 denotes an AC power supply for applying an AC voltage between the two electrodes. Reference numeral 9 denotes an exhaust device for exhausting the inside of the chamber 1. The sample 10 is disposed on the lower electrode 3, for example.

FIG. 2 shows an example of a coating apparatus. In the figure, reference numeral 11 denotes a chamber, and a target 12 is disposed at an upper portion substantially in the center of the chamber.
The target is supported by a target support 13. Reference numeral 14 denotes an ion gun for irradiating the target with ions, which is supported by an ion gun support 15. 1
Reference numeral 6 denotes a sample support for supporting a sample 10 which is arranged to face the target with a space therebetween. Reference numeral 17 denotes a shutter provided between the target 12 and the sample 10 so as to be movable in the horizontal direction (the left-right direction on the paper), and the movement is driven by a shutter drive mechanism 18. Reference numeral 19 denotes an exhaust device for exhausting the inside of the chamber 11.

Next, a case where a sample is etched by a dry etching apparatus as shown in FIG. 1 and then coated by a coating apparatus as shown in FIG. 2 will be described.

First, a sample inlet / outlet (not shown) of the chamber 1 of the dry etching apparatus is opened, and a sample 10 is placed on the lower electrode 3. Then, after closing the sample inlet / outlet (not shown), for example, an appropriate amount of Ar gas is introduced into the chamber 1, and the inside of the chamber is evacuated to an appropriate degree of vacuum by the exhaust device 9. In this state, an AC voltage is applied between the upper electrode 2 and the lower electrode 3 from the AC power supply 8,
The sample 10 was generated by the plasma of Ar gas generated between the two electrodes.
Is appropriately etched.

Next, after leaking in the chamber 1, a sample inlet / outlet (not shown) is opened, and the sample 10 is once taken out of the chamber. Then, a sample inlet / outlet (not shown) of the chamber 11 of the coating apparatus is opened,
The sample 10 is placed on a sample support 16. Then, after closing the sample inlet / outlet (not shown), the inside of the chamber 11 is evacuated to an appropriate degree of vacuum by the evacuation device 19. The ion gun is operated in this state, and the target 12 is bombarded with ions generated from the ion gun. The target 12 is sputtered by this impact, and sputter particles generated by the sputtering fly toward the sample 10. At this time, the shutter 17 is moved in the horizontal direction by the drive mechanism 18 and moved to a position outside the position just above the sample 10. Therefore, sputtered particles from the target 12 adhere to the surface of the sample 10 in a film form.

[0010]

When the coating is performed on the sample after the etching is performed on the sample, the sample is set in the chamber of the dry etching apparatus and the etching is performed as described above. After the sample is once taken out of the chamber of the dry etching apparatus and taken out of the chamber, the sample is set in the chamber of the coating apparatus to perform coating.
Therefore, the sample is once taken out of the chamber between the etching process and the coating process, and during that time, there is a possibility that dust or the like may adhere to the sample and the sample may be oxidized.

Further, since two types of devices are used separately, there are also problems such as troublesome operation, high cost, and a large installation place.

The present invention solves such a problem.
A new sample processing apparatus is provided.

[0013]

A sample processing apparatus according to the present invention is characterized in that dry etching of a sample and coating of the sample can be performed in a chamber provided with an exhaust means. In the sample processing apparatus of the present invention, an ion gun, a target sputtered by ions from the ion gun, and a space between each other along a direction in which sputtered particles from the target fly in a chamber provided with an exhaust unit. , The two electrodes placed opposite to each other, the sample supported by the first electrode farther from the target, and the second electrode closer to the target and the target intersecting the direction in which the sputtered particles fly. A shutter is provided so as to be movable in the direction, and a voltage for generating a discharge is applied between the electrodes. The sample processing apparatus according to the present invention includes, in a chamber provided with an exhaust unit, a container containing a substance that evaporates by electron impact or resistance heating, and a space between each other along a direction in which evaporated particles from the container fly. Two electrodes arranged opposite to each other with a space therebetween, a sample supported by a first electrode remote from the container, and a direction in which the evaporated particles fly between the second electrode closer to the target and the target And a shutter movably disposed in a direction crossing the horizontal axis, wherein a voltage for generating a discharge is applied between the electrodes.
The sample processing apparatus of the present invention, in a chamber provided with an exhaust means, an ion gun, a target sputtered by ions from the ion gun, a sample support table arranged in a direction in which sputter particles from the target fly, And a shutter arranged movably between the sample supported by the sample support table and the target in a direction crossing the direction in which the sputtered particles fly, and an ion generator of the ion gun is configured to move the sample in the target direction and the sample. It is characterized in that it can be directed in any of the directions.
The sample processing apparatus according to the present invention includes, in a chamber provided with an exhaust unit, a container containing a substance that evaporates by electron impact or resistance heating, and a sample support arranged in a direction in which evaporated particles from the container fly. A table, an ion gun for generating ions for etching the sample, and a shutter movably arranged between the container and the sample in a direction crossing the evaporating particle flying direction. .

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 3 shows an example of a sample processing apparatus according to the present invention.

In the figure, reference numeral 21 denotes a chamber, and a target 22 is arranged at an upper portion substantially at the center of the chamber. The target is supported by a target support 23. Reference numeral 24 denotes an ion gun for irradiating the target with ions, which is supported by an ion gun support 25.

Below the target 22, an upper electrode 26 and a lower electrode 27 are arranged facing each other with a space therebetween. The upper electrode 26 is supported by a shutter 29 via an insulating member 28. Reference numeral 30 denotes a shutter driving mechanism.

Reference numeral 31 denotes a lower electrode support, which supports the lower electrode 27 via an insulating member 32. Reference numeral 33 denotes an AC power supply for applying an AC voltage between the two electrodes. Three
Reference numeral 4 denotes an exhaust device for exhausting the inside of the chamber 21. The sample 40 is disposed on the lower electrode 27, for example.

Next, the case where the sample 40 is coated after being etched will be described.

In the initial operation of the apparatus, the upper electrode 26
And the lower electrode 27 is fitted and opposed as shown in FIG.
That is, the position of the shutter 29 is driven by the shutter driving mechanism 30 so that the respective central portions of the target 22, the upper electrode 26, and the lower electrode 27 are located substantially on a straight line.

First, a sample inlet / outlet (not shown) of the chamber 21 is opened, and the sample 40 is placed on the lower electrode 27. Then, after closing the sample inlet / outlet (not shown), for example, an appropriate amount of Ar gas is introduced into the chamber 21, and the inside of the chamber is evacuated to an appropriate degree of vacuum by the exhaust device 34. In this state, an AC voltage is applied between the upper electrode 26 and the lower electrode 27 from the AC power supply 33, and the surface of the sample 40 is etched by Ar gas plasma generated between both electrodes. When the predetermined etching is completed, the AC power supply 33 is turned off, and the introduction of Ar gas into the chamber 21 is also stopped.

Next, the ion gun 24 is operated in this state, and the ions generated from the ion gun
Shock. The target 22 is sputtered by this impact, and sputter particles generated by the sputter fly toward the sample 40. In the initial stage of the sputtering, particles of impurities such as dust and oils and fats attached to the target surface may fly and adhere to the sample surface. In this period, the shutter 29 is not moved so as not to be attached to the sample 10, and the shutter 29 is left just above the sample 10.

After a predetermined period, the shutter 29 is moved in the horizontal direction by the driving mechanism 30 and comes to a position off the sample 40. Therefore, the target 2 is placed on the surface of the sample 40.
The sputtered particles from 2 are attached in a film form, and the sample surface is coated with particles of the material forming the target 22 in a film form. When a predetermined coating time comes, the driving mechanism 30
To move the shutter 29 to its original position,
The operation of the ion gun 24 is stopped. As a result, a coating of a predetermined thickness is applied to the sample surface.

FIG. 4 shows another example of the sample processing apparatus.

In the figure, reference numeral 41 denotes a chamber, and a target 42 is arranged at an upper portion substantially at the center of the chamber. The target 42 is supported by a target support 43. Reference numeral 44 denotes an ion gun for irradiating the target with ions, which is supported on an ion gun support base 46 via an ion gun rotating mechanism 45. This rotation mechanism rotates the entire ion gun 44 when the ion generating section of the ion gun 44 is directed toward the target 42 or the sample 50, and is controlled by a control device (not shown) outside the chamber. Operates according to instructions. In FIG. 4, the ion gun directed in the direction of the sample is 44
A, the ion gun directed toward the target is indicated by 44B.

Reference numeral 47 denotes a sample support for supporting a sample 50 which is arranged to face the target 42 with a space therebetween. Reference numeral 48 denotes a shutter provided between the target 42 and the sample 50 so as to be movable in the horizontal direction (the left-right direction on the paper), and the movement is driven by a shutter drive mechanism 49. Reference numeral 51 denotes an exhaust device for exhausting the inside of the chamber 41.

Next, the case where the sample 50 is coated after being etched will be described.

In the initial stage of the operation of the apparatus, as shown in FIG. 4, the shutter 48 is driven by the shutter driving mechanism 49 so that the shutter 48 is located right above the sample. The ion gun 44 is driven by a rotation mechanism 45 so that the ion generating section of the ion gun 44 faces the sample 50 as shown at 44A.

First, the sample inlet / outlet (not shown) of the chamber 41 is opened, and the sample 50 is placed on the sample support 47. Then, the inside of the chamber is evacuated to an appropriate degree of vacuum by the exhaust device 51. In this state, at the same time as the ion gun 44 is operated, the shutter 48 is moved in the horizontal direction by the shutter drive mechanism 49 so that the shutter 48 comes off from directly above the sample. Then, ions generated from the ion gun 44 are irradiated on the surface of the sample 50, and as a result, the surface of the sample is etched. When a predetermined amount of etching is performed by irradiating ions for a predetermined time, the shutter 48 is driven by the shutter driving mechanism 49 so that the shutter 48 comes directly above the sample 50, and the operation of the ion gun is stopped.

Next, as shown at 44B, the ion generating portion of the ion gun 44 is moved by the rotating mechanism 45 to the target 42.
Rotate the ion gun to face the direction. Then, the ion gun 44 is operated, and the target 42 is bombarded with ions generated from the ion gun 44. The target 42 is sputtered by this impact, and sputter particles generated by the sputtering fly toward the sample 50.
During the initial period of the operation of the ion gun, as described above, particles of impurities such as dust and oils and fats adhering to the target surface may fly and adhere to the sample surface. 48 is not moved, and is left just above the sample 50. After this period, the shutter 48 is moved by the driving mechanism 49 to a position off the sample 50. Therefore, sputter particles from the target 42 adhere to the surface of the sample 50 in a film form, and particles of the material forming the target 42 are coated on the sample surface in a film form. When a predetermined coating time comes, the shutter 48 is returned to the original position by the drive mechanism 49, and at the same time, the operation of the ion gun 44 is stopped. As a result, a coating of a predetermined thickness is applied to the sample surface. Such a sample processing apparatus as shown in FIG. 4 does not require two electrodes and an AC power supply as compared with the sample processing apparatus as shown in FIG.

FIG. 5 shows another example of the sample processing apparatus. In the figure, reference numeral 61 denotes a chamber, and a crucible 62 containing an evaporating substance and a deflection type electron gun 63 for irradiating electrons to the evaporating substance in the crucible are arranged at a lower portion substantially at the center of the chamber. Above the crucible 62, an upper electrode 6
4, the lower electrodes 65 are arranged facing each other with a space therebetween. The upper electrode 64 is supported by an upper electrode support 67 via an insulating member 66. On the other hand, the lower electrode 65 is supported by a shutter 69 via an insulating member 68. 7
0 is a shutter drive mechanism. Reference numeral 71 denotes an AC power supply for applying an AC voltage between the two electrodes. Reference numeral 72 denotes an exhaust device for exhausting the inside of the chamber 61. The sample 80 is supported on the upper electrode 64, for example. In the device having such a configuration, at the initial stage of operation of the device, the position of the shutter 69 is set to the shutter driving mechanism 70 so that the upper electrode 64 and the lower electrode 65 are opposed to each other.
It is driven by. First, the sample inlet / outlet (not shown) of the chamber 61 is opened, and the sample 80 is placed on the upper electrode 64.
Support on top. And sample inlet / outlet (not shown)
After closing the chamber, an appropriate amount of Ar gas is introduced into the chamber 61, and the inside of the chamber is evacuated to an appropriate degree of vacuum by the exhaust device 72. In this state, an AC voltage is applied between the upper electrode 64 and the lower electrode 65 from the AC power supply 71, and the surface of the sample 80 is etched by Ar gas plasma generated between both electrodes. When the predetermined etching is completed, the AC power supply 71 is turned off, and the introduction of Ar gas into the chamber 61 is also stopped. Next, the deflection type electron gun 63 is operated to bombard the evaporating substance in the crucible 62 with the electrons generated from the electron gun. Due to this impact, the evaporated particles of the evaporated substance fly toward the sample 80. At this time, the shutter 69 is moved in the horizontal direction by the driving mechanism 70 so that the shutter 69 comes to a position off the crucible 62. Therefore, the evaporated particles adhere to the surface of the sample 80 in the form of a film. In this case, the crucible 6
Instead of 2, a metal board having a convex portion for accommodating the evaporating substance may be used, and instead of the electron impact of the electron gun, an electric current may be applied to the metal board to evaporate the evaporating substance by resistance heating.

FIG. 6 shows another example of the sample processing apparatus. In the figure, components having the same symbols as those used in FIG. 5 are the same components. In the drawing, reference numeral 81 denotes a chamber, and a crucible 62 containing an evaporating substance and a deflection type electron gun 63 for irradiating electrons on the evaporating substance in the crucible are arranged at a lower portion substantially at the center of the chamber. Above the crucible 62, a sample support 82 for supporting a sample 90 is provided. Reference numeral 83 denotes an ion gun for irradiating the sample 90 with ions, which is supported by an ion gun support base 84. Reference numeral 85 denotes a shutter provided between the crucible 63 and the sample 90 so as to be movable in the horizontal direction (the left-right direction on the paper), and the movement is driven by a shutter drive mechanism 86.

In the apparatus having such a configuration, in the initial stage of operation, the shutter 85 is driven by the shutter driving mechanism 86 so that the shutter 85 is located directly above the sample 90.
First, a sample inlet / outlet (not shown) of the chamber 81 is opened, and the sample 90 is supported on the sample support 82. Then, the inside of the chamber is evacuated to an appropriate degree of vacuum by the exhaust device 72. In this state, the ion gun 83 is operated, and at the same time, the shutter 8 is operated by the shutter driving mechanism 86.
5 is moved horizontally from directly above the sample. Then, ions generated from the ion gun 83 are irradiated on the surface of the sample 90, and as a result, the surface of the sample is etched. When a predetermined amount of etching is performed by irradiating ions for a predetermined time, the shutter 85 is driven by the shutter driving mechanism 86 so that the shutter 85 is located directly below the sample 90, and the operation of the ion gun is stopped. next,
The deflection electron gun 63 is operated, and electrons generated from the electron gun bombard the evaporating substance in the crucible 62. Due to this impact, evaporated particles of the evaporated substance fly toward the sample 90. At this time, the shutter 85 is moved in the horizontal direction by the drive mechanism 86 so that the shutter 85 comes to a position off the crucible 62. Therefore, the evaporated particles adhere to the surface of the sample 90 in the form of a film.

According to the above-described example, when a sample is subjected to an etching process and then a coating process is performed, as described above, the sample is etched in the same apparatus and then the sample is taken out of the chamber. In addition, since the coating can be performed as it is, there is no danger of adhesion of dust and the like to the sample and oxidation of the sample.

Further, since the etching process and the coating process can be performed by one apparatus, the operation is easy, the cost is not increased, and the installation place is not widened.

Although the embodiments shown in FIGS. 3 and 5 use an AC power supply as a power supply for etching, a DC power supply or a high-frequency power supply may be used.

[Brief description of the drawings]

FIG. 1 shows an example of an etching apparatus.

FIG. 2 shows an example of a coating apparatus.

FIG. 3 shows an example of a sample processing apparatus of the present invention.

FIG. 4 shows another example of the sample processing apparatus of the present invention.

FIG. 5 shows an example of a sample processing apparatus of the present invention.

FIG. 6 shows another example of the sample processing apparatus of the present invention.

[Explanation of symbols]

 1, 11, 21, 41, 61, 81 ... chamber 2, 26, 64 ... upper electrode 3, 27, 65 ... lower electrode 4, 67 ... upper electrode support 5, 7, 28, 32, 66, 68 ... insulation Member 6, 31 Lower electrode support 8, 33, 71 AC power supply 9, 19, 34, 51, 72 Exhaust device 10, 40, 50, 80, 90 Sample 12, 22, 42 Target 13, 23 43, target support 14, 24, 44, 83 ion gun 15, 25, 46, 84 ion gun support 16, 47, 82 sample support 17, 29, 48, 69, 85 shutter 18, 30, 49, 70, 86: shutter driving mechanism 45: rotating mechanism 62: crucible 63: deflection electron gun

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G01N 1/28 N

Claims (7)

[Claims] 1. A sample processing apparatus capable of performing dry etching of a sample and coating of the sample in a chamber provided with an exhaust unit. 2. A space provided between a plurality of ion guns, a target sputtered by ions from the ion gun, and a sputtered particle from the target in a chamber provided with an exhaust means. Two electrodes placed opposite to each other, a sample supported by a first electrode far from the target, and a movement in a direction crossing the sputtered particle flying direction between the second electrode closer to the target and the target A sample processing apparatus, comprising: a shutter arranged so as to be capable of being applied; and a voltage for generating a discharge is applied between the electrodes. 3. A container containing a substance that evaporates by electron impact or resistance heating in a chamber provided with an exhaust means, and a space is formed between the containers along a direction in which evaporated particles from the container fly. Two electrodes which are opened and opposed to each other,
A sample supported by a first electrode remote from the container; and
A shutter is provided movably between the second electrode closer to the target and the target in a direction crossing the evaporating particle flying direction, and a voltage for generating a discharge is applied between the electrodes. Sample processing device. 4. The sample processing apparatus according to claim 2, wherein the shutter supports the second electrode. 5. An ion gun, a target sputtered by ions from the ion gun, a sample support table arranged in a direction in which sputtered particles from the target fly into a chamber provided with an exhaust means, and A shutter is provided so as to be movable between a sample supported on a sample support table and the target in a direction transverse to the direction in which the sputtered particles fly, and an ion generating unit of the ion gun is provided in any one of the target direction and the sample direction. A sample processing apparatus in which the ion gun is movable so that the ion gun can be directed. 6. The sample processing apparatus according to claim 5, wherein said ion gun is rotatable. 7. A container containing a substance that evaporates by electron impact or resistance heating in a chamber provided with an exhaust means, a sample supporter arranged in a direction in which evaporated particles from the container fly, and a sample. And a sample processing apparatus provided with an ion gun for generating ions for etching the sample, and a shutter arranged between the container and the sample so as to be movable in a direction crossing the evaporating particle flying direction.