JP2001335938A - Method for reducing particle - Google Patents
Method for reducing particleInfo
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- JP2001335938A JP2001335938A JP2000157798A JP2000157798A JP2001335938A JP 2001335938 A JP2001335938 A JP 2001335938A JP 2000157798 A JP2000157798 A JP 2000157798A JP 2000157798 A JP2000157798 A JP 2000157798A JP 2001335938 A JP2001335938 A JP 2001335938A
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- substrate
- plasma
- gas
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- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマを生成し
て基板の表面に処理を施す処理装置において、非処理時
における処理室内のパーティクルを低減するパーティク
ル低減方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a particle reduction method for reducing particles in a processing chamber when processing is not performed in a processing apparatus that generates plasma and performs processing on the surface of a substrate.
【０００２】[0002]
【従来の技術】現在、半導体の製造では、プラズマＣＶ
Ｄ(Chemical Vapor Deposition) 装置を用いた成膜が知
られている。プラズマＣＶＤ装置は、膜の材料となる材
料ガスを容器内の成膜室の中に導入してプラズマ状態に
し、プラズマ中の活性な励起原子によって基板表面の化
学的な反応を促進して成膜を行う装置である。プラズマ
ＣＶＤ装置においては、基板への成膜が完了すると、材
料ガスの供給を停止すると共にプラズマをオフ状態にし
て成膜室から搬送室に基板を移送し、新たな基板を成膜
室に搬入して、再び材料ガスを供給すると共に成膜室内
をプラズマ状態にして成膜を行ってている。2. Description of the Related Art At present, in semiconductor manufacturing, plasma CV is used.
Film formation using a D (Chemical Vapor Deposition) apparatus is known. In a plasma CVD apparatus, a material gas serving as a material of a film is introduced into a film forming chamber in a container to be in a plasma state, and a chemical reaction on a substrate surface is promoted by active excited atoms in the plasma to form a film. It is a device for performing. In the plasma CVD apparatus, when the film formation on the substrate is completed, the supply of the material gas is stopped, the plasma is turned off, the substrate is transferred from the film formation chamber to the transfer chamber, and a new substrate is loaded into the film formation chamber. Then, the material gas is supplied again, and the film is formed in a plasma state in the film formation chamber.
【０００３】[0003]
【発明が解決しようとする課題】プラズマ中には微粒子
がパーティクルとなって飛散しているため、基板の成膜
が完了してプラズマをオフ状態にした瞬間に、成膜後の
基板にパーティクルが落下して堆積する虞が生じてしま
う。また、基板を搬出した後であっても、支持台上にパ
ーティクルが落下して搬入された基板の裏面にパーティ
クルが付着する虞が生じてしまう。プラズマＣＶＤ装置
では、成膜が完了した後の基板上や基板搬送後の支持台
上にパーティクルが堆積する虞があるが、特別な処置を
施していないのが現状であった。Since fine particles are scattered as particles in the plasma, the particles are deposited on the substrate after film formation at the moment when the film formation of the substrate is completed and the plasma is turned off. There is a risk of falling and accumulating. Further, even after the substrate is unloaded, there is a possibility that the particles may fall on the support table and adhere to the back surface of the loaded substrate. In the plasma CVD apparatus, particles may be deposited on the substrate after the film formation is completed or on the support table after the substrate is transferred, but at present, no special treatment is performed.
【０００４】本発明は上記状況に鑑みてなされたもの
で、プラズマ処理装置において非処理時におけるパーテ
ィクルを低減することができるパーティクル低減方法を
提供することを目的とする。The present invention has been made in view of the above circumstances, and has as its object to provide a particle reduction method capable of reducing particles during non-processing in a plasma processing apparatus.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明のパーティクル低減方法は、処理室に原料ガス
及び酸素及び不活性ガスを導入し、プラズマを発生させ
てそこで励起・活性化された原子・分子により基板の表
面に処理が施されるプラズマ処理装置において、基板の
表面に処理が施された後、プラズマを発生させた状態で
原料ガスの導入を停止して微粒子を基板上に落下させな
いようにすることを特徴とする。According to the present invention, there is provided a method for reducing particles, which comprises introducing a raw material gas, oxygen, and an inert gas into a processing chamber, generating plasma, and exciting and activating the plasma. In a plasma processing apparatus in which the surface of the substrate is processed by atoms and molecules that have been processed, after the surface of the substrate is processed, the introduction of the source gas is stopped in a state where plasma is generated, and fine particles are deposited on the substrate. It is characterized in that it does not fall.
【０００６】また、上記目的を達成するための本発明の
パーティクル低減方法は、処理室に原料ガス及び酸素及
び不活性ガスを導入し、プラズマを発生させてそこで励
起・活性化された原子・分子により基板の表面に処理が
施されるプラズマ処理装置において、基板の表面に処理
が施された後、プラズマを発生させた状態で原料ガスの
導入を停止して微粒子を基板上に落下させないように
し、この状態で基板を搬出することで微粒子を基板支持
台の上に落下させないようにすることを特徴とする。According to the particle reduction method of the present invention for achieving the above object, a raw material gas, oxygen and an inert gas are introduced into a processing chamber, and plasma is generated, where the excited atoms and molecules are excited and activated. In the plasma processing apparatus in which the surface of the substrate is processed by the method, after the surface of the substrate is processed, the introduction of the raw material gas is stopped in a state where the plasma is generated so that the fine particles do not fall on the substrate. In this state, the substrate is carried out to prevent the fine particles from falling onto the substrate support.
【０００７】そして、原料ガスはシランであり、不活性
ガスはヘリウムであることを特徴とする。[0007] The source gas is silane, and the inert gas is helium.
【０００８】また、上記目的を達成するための本発明の
パーティクル低減方法は、処理室に原料ガス及び酸素及
び不活性ガスを導入し、プラズマを発生させてそこで励
起・活性化された原子・分子により基板の表面に処理が
施されるプラズマ処理装置において、基板の表面に処理
が施された後、プラズマを発生させた状態で原料ガスの
導入を停止して微粒子を基板上に落下させないように
し、プラズマを発生させた状態で基板を搬出することで
微粒子を基板支持台の上に落下させないようにし、基板
を搬出した後、気相中の微粒子を気化させる量のフッ素
ガスを処理室内に導入し、気相中の微粒子を気化させた
後にフッ化ガスを停止して基板を搬入することを特徴と
する。According to the present invention, there is provided a method for reducing particles according to the present invention, in which a raw material gas, oxygen and an inert gas are introduced into a processing chamber, plasma is generated, and atoms and molecules excited and activated there are generated. In the plasma processing apparatus in which the surface of the substrate is processed by the method, after the surface of the substrate is processed, the introduction of the raw material gas is stopped in a state where the plasma is generated so that the fine particles do not fall on the substrate. By removing the substrate while the plasma is being generated, the particles are prevented from falling onto the substrate support, and after removing the substrate, an amount of fluorine gas that vaporizes the particles in the gas phase is introduced into the processing chamber. Then, after the fine particles in the gas phase are vaporized, the fluorinated gas is stopped and the substrate is carried in.
【０００９】そして、原料ガスはシランであり、不活性
ガスはヘリウムであり、フッ化ガスはＮＦ3 ガスである
ことを特徴とする。The source gas is silane, the inert gas is helium, and the fluoride gas is NF 3 gas.
【００１０】[0010]
【発明の実施の形態】図１には本発明の一実施形態例に
係るパーティクル低減方法を実施するプラズマＣＶＤ装
置の概略側面を示してある。FIG. 1 is a schematic side view of a plasma CVD apparatus for performing a particle reduction method according to an embodiment of the present invention.
【００１１】図に示すように、基部１には円筒状のアル
ミニウム製の容器２が設けられ、容器２内に処理室とし
ての成膜室３が形成されている。容器２の上部には円形
の天井板４が設けられ、容器２の中心における成膜室３
にはウエハ支持台５が備えられている。ウエハ支持台５
は半導体の基板６を静電的に吸着保持する円盤状の載置
部７を有し、載置部７は支持軸８に支持されている。載
置部７は、タングステン等の金属板２５の表面にアルミ
ナ等のセラミックス２６が設けられて構成されている。
載置部７の金属板２５にはバイアス電源２１及び静電電
源２２が接続され、載置部７に低周波を発生させると共
に静電気力を発生させる。ウエハ支持台５は全体が昇降
自在もしくは支持軸８が伸縮自在とすることで、上下方
向の高さが最適な高さに調整できるようになっている。As shown in FIG. 1, a cylindrical aluminum container 2 is provided on a base 1, and a film forming chamber 3 as a processing chamber is formed in the container 2. A circular ceiling plate 4 is provided on the upper part of the container 2, and the film forming chamber 3 at the center of the container 2 is provided.
Is provided with a wafer support table 5. Wafer support 5
Has a disk-shaped mounting portion 7 for electrostatically holding a semiconductor substrate 6, and the mounting portion 7 is supported by a support shaft 8. The mounting portion 7 is configured by providing ceramics 26 such as alumina on the surface of a metal plate 25 such as tungsten.
A bias power supply 21 and an electrostatic power supply 22 are connected to the metal plate 25 of the mounting section 7 to generate a low frequency and an electrostatic force on the mounting section 7. The entire height of the wafer support table 5 can be raised and lowered or the support shaft 8 can be expanded and contracted, so that the height in the vertical direction can be adjusted to an optimum height.
【００１２】容器２の外周には電磁石９が配置され、容
器２は環状の電磁石９により包囲されている。電磁石９
は円環状の鉄心１０と鉄心１０に巻かれるコイル１１と
により構成され、コイル１１には三相インバータ電源１
２が接続されて電磁石９に電圧が印加される。電磁石９
に電圧が印加されることにより、載置部７に載置される
基板６の表面に略平行に、かつ、容器２の中心軸回りに
回転する磁場を生成するようになっている。An electromagnet 9 is arranged on the outer periphery of the container 2, and the container 2 is surrounded by an annular electromagnet 9. Electromagnet 9
Is composed of an annular iron core 10 and a coil 11 wound around the iron core 10, and the coil 11 has a three-phase inverter power supply 1
2 is connected, and a voltage is applied to the electromagnet 9. Electromagnet 9
Is applied, a magnetic field is generated that rotates substantially parallel to the surface of the substrate 6 placed on the placement unit 7 and rotates around the central axis of the container 2.
【００１３】電磁波透過窓としての天井板４の上には、
例えば、円形リング状の高周波アンテナ１３が配置さ
れ、高周波アンテナ１３には整合器１４を介して高周波
電源１５が接続されている。高周波アンテナ１３に電力
を供給することにより電磁波が容器２の成膜室３に入射
する。容器２内に入射された電磁波は、成膜室３内のガ
スをイオン化してプラズマを発生すると共に、成膜室３
内の磁束に作用して電子磁気音波を発生し、これがラン
ダウ減衰によりプラズマにエネルギを移行させ、成膜室
３内に強いプラズマを発生させる。On the ceiling plate 4 as an electromagnetic wave transmission window,
For example, a high frequency antenna 13 having a circular ring shape is arranged, and a high frequency power supply 15 is connected to the high frequency antenna 13 via a matching unit 14. By supplying power to the high-frequency antenna 13, an electromagnetic wave enters the film forming chamber 3 of the container 2. The electromagnetic waves incident into the container 2 ionize the gas in the film forming chamber 3 to generate plasma, and generate the plasma.
Electromagnetic waves are generated by acting on magnetic flux in the inside, and this energy is transferred to the plasma by Landau damping, and a strong plasma is generated in the film forming chamber 3.
【００１４】容器２にはシラン（例えば SiH4)等の材料
ガスを供給するガス供給ノズル１６が設けられ、ガス供
給ノズル１６から成膜室３内に成膜材料（例えばSi）と
なる材料ガスが供給される。また、容器２にはアルゴン
やヘリウム等の不活性ガス（希ガス）や酸素、水素、ク
リーニング用のＮＦ3 等の補助ガスを供給する補助ガス
供給ノズル１７が設けられ、基部１には容器２の内部を
排気するための真空排気系（図示省略）に接続される排
気口１８が設けられている。また、容器２には基板６の
搬入・搬出口３１が設けられ、搬入・搬出口３１を通し
て搬送室との間で基板６が搬入・搬出される。The container 2 is provided with a gas supply nozzle 16 for supplying a material gas such as silane (for example, SiH 4 ). The material gas which becomes a film forming material (for example, Si) from the gas supply nozzle 16 into the film forming chamber 3 is provided. Is supplied. The container 2 is provided with an auxiliary gas supply nozzle 17 for supplying an inert gas (rare gas) such as argon or helium, oxygen, hydrogen, or an auxiliary gas such as NF 3 for cleaning. There is provided an exhaust port 18 connected to a vacuum exhaust system (not shown) for exhausting the inside of the device. The container 2 is provided with a loading / unloading port 31 for the substrate 6, and the loading / unloading port 31 allows the loading / unloading of the substrate 6 to / from the transfer chamber.
【００１５】上述したプラズマＣＶＤ装置では、ウエハ
支持台５の載置部７に基板６が載せられ、静電的に吸着
される。ガス供給ノズル１６から所定流量の材料ガスを
成膜室３内に供給すると共に補助ガス供給ノズル１７か
ら処置流量の補助ガス（例えば酸素及びヘリウム）を成
膜室３内に供給し、成膜室３内を成膜条件に応じた所定
圧力に設定する。その後、高周波電源１５から高周波ア
ンテナ１３に電力を供給して高周波を発生させると共に
バイアス電源２１から載置部７に電力を供給して低周波
を発生させる。同時に、三相インバータ電源１２から電
磁石９に電圧が印加され、成膜室３内に回転磁場が生成
される。In the above-described plasma CVD apparatus, the substrate 6 is mounted on the mounting portion 7 of the wafer support 5 and is electrostatically attracted. A material gas at a predetermined flow rate is supplied from the gas supply nozzle 16 into the film formation chamber 3, and an auxiliary gas (for example, oxygen and helium) at a treatment flow rate is supplied from the auxiliary gas supply nozzle 17 into the film formation chamber 3. 3 is set to a predetermined pressure according to the film forming conditions. Thereafter, power is supplied from the high-frequency power supply 15 to the high-frequency antenna 13 to generate a high frequency, and power is supplied from the bias power supply 21 to the mounting section 7 to generate a low frequency. At the same time, a voltage is applied from the three-phase inverter power supply 12 to the electromagnet 9, and a rotating magnetic field is generated in the film forming chamber 3.
【００１６】これにより、成膜室３内の材料ガスが放電
して一部がプラズマ状態となる。プラズマ中の電子、あ
るいはイオンといった荷電粒子は回転磁場の磁力線に巻
き付くように回転し、更に電界にも影響されながら運動
する。従って、高密度、かつ均一な密度のプラズマが成
膜域に留まることになる。このプラズマは、材料ガス中
の他の中性分子に衝突して更に中性分子を電離、あるい
は励起する。こうして生じた活性な粒子は、基板６の表
面に吸着して効率良く化学反応を起こし、堆積してＣＶ
Ｄ膜となる。尚、処理手段として、平行な磁場を形成し
てプラズマにより成膜を行う装置を例に挙げているが、
磁場の形成は適宜変更できると共に、成膜以外でもエッ
チング等他の処理を行う装置を適用することも可能であ
る。As a result, the material gas in the film forming chamber 3 is discharged, and a part of the material gas enters a plasma state. Charged particles such as electrons or ions in the plasma rotate so as to wrap around the lines of magnetic force of the rotating magnetic field, and move while being influenced by the electric field. Therefore, high-density and uniform-density plasma remains in the film formation region. This plasma collides with other neutral molecules in the material gas to further ionize or excite the neutral molecules. The active particles thus generated are adsorbed on the surface of the substrate 6 and cause a chemical reaction efficiently, and are deposited to form a CV.
It becomes a D film. In addition, as an example of the processing unit, an apparatus that forms a parallel magnetic field and performs film formation by plasma is described.
The formation of the magnetic field can be changed as appropriate, and it is also possible to apply an apparatus for performing other processing such as etching other than film formation.
【００１７】基板６に対する成膜が行われた後、成膜が
完了した基板６を搬送室に搬送して新たな基板６を搬入
する。基板６に対する成膜が完了した後、本発明のパー
ティクル低減方法が実施される。図２に基づいてパーテ
ィクル低減方法を説明する。図２には本発明の一実施形
態例に係るパーティクル低減方法の工程説明を示してあ
る。After the film formation on the substrate 6 is performed, the substrate 6 on which the film formation is completed is transferred to the transfer chamber, and a new substrate 6 is loaded. After the film formation on the substrate 6 is completed, the particle reduction method of the present invention is performed. A method for reducing particles will be described with reference to FIG. FIG. 2 shows a process description of a particle reduction method according to an embodiment of the present invention.
【００１８】図に示すように、成膜工程で、成膜室３内
に材料ガスのSiH4、補助ガスの酸素（Ｏ2 ）及びヘリウ
ム（Ｈｅ）を供給すると共に、成膜室３内をプラズマ状
態にして（プラズマオン）基板６の表面に処理が施され
る。基板６の成膜が完了した後、材料ガスのSiH4の供給
を停止（材料ガスオフ）し、補助ガスのＯ2 及びＨｅを
供給したまま成膜室３内をプラズマ状態にする。材料ガ
スの供給のないプラズマ状態が保たれることにより、成
膜室３内の微粒子は空間的に捕捉され、成膜が完了した
基板６の上に落下することがない。As shown in the drawing, in the film forming process, a material gas SiH 4 , an auxiliary gas oxygen (O 2 ) and helium (He) are supplied into the film forming chamber 3 and the inside of the film forming chamber 3 is supplied. The surface of the substrate 6 is processed in a plasma state (plasma on). After the film formation on the substrate 6 is completed, the supply of the material gas SiH 4 is stopped (the material gas is turned off), and the inside of the film formation chamber 3 is brought into a plasma state while the auxiliary gases O 2 and He are being supplied. By maintaining a plasma state in which no material gas is supplied, the fine particles in the film forming chamber 3 are spatially captured and do not drop onto the substrate 6 on which film formation has been completed.
【００１９】この状態、即ち、補助ガスのＯ2 及びＨｅ
を供給したまま成膜室３内をプラズマ状態にした状態
で、成膜が完了した基板６を図示しない搬送室に搬送す
る。補助ガスとして、Ｏ2 及びＨｅを供給するのは、補
助ガスがＯ2 だけであると、成膜室３の壁面を激しくス
パッタしてパーティクルを増加させてしまう虞があるた
め、Ｈｅを供給してパーティクルの増加を緩和してい
る。In this state, that is, the auxiliary gases O 2 and He
The substrate 6 on which film formation has been completed is transferred to a transfer chamber (not shown) in a state where the inside of the film formation chamber 3 is kept in a plasma state while the substrate is supplied. O 2 and He are supplied as auxiliary gases. If only O 2 is used as auxiliary gas, there is a possibility that the wall surface of the film forming chamber 3 may be violently sputtered to increase the number of particles. To mitigate the increase in particles.
【００２０】成膜が完了した基板３を搬送した後、補助
ガスのＯ2 及びＨｅを供給して成膜室３内をプラズマ状
態にしたまま、成膜室３内に微量のフッ化ガス（例え
ば、ＮＦ3 ガス）を成膜室３内に導入し、気相中に残留
するパーティクルと反応させて気化させる。この時のＮ
Ｆ3 ガスの量は、壁面をクリーニングしない程度の量と
する。つまり、ＮＦ3 によって壁面がエッチングされな
い量としている。これにより、基板３を搬送した後、ウ
エハ支持台５の上にパーティクルが落下・堆積すること
がなくなる。After the substrate 3 on which the film formation is completed is transported, O 2 and He as auxiliary gases are supplied to keep the inside of the film formation chamber 3 in a plasma state. For example, NF 3 gas is introduced into the film forming chamber 3 and is reacted with particles remaining in the gas phase to be vaporized. N at this time
The amount of F 3 gas is set to an amount that does not clean the wall surface. That is, the amount is such that the wall surface is not etched by NF 3 . This prevents particles from falling and accumulating on the wafer support table 5 after the substrate 3 is transferred.
【００２１】ＮＦ3 ガスを導入して気相中に残留するパ
ーティクルを気化させた後、ＮＦ3ガスの供給を停止
（ＮＦ3 オフ）して新たな基板３をウエハ支持台５の上
に搬入する。この時、ウエハ支持台５の上にはパーティ
クルが堆積していないので、新たな基板３の裏面等にパ
ーティクルが付着することがない。基板３を搬入した
後、成膜室３内に材料ガスのSiH4を導入して再び成膜を
実施する。After introducing the NF 3 gas to vaporize the particles remaining in the gas phase, the supply of the NF 3 gas is stopped (NF 3 off) and a new substrate 3 is loaded onto the wafer support 5. I do. At this time, since no particles are deposited on the wafer support table 5, the particles do not adhere to the back surface of the new substrate 3 or the like. After the substrate 3 is carried in, the material gas SiH 4 is introduced into the film formation chamber 3 to perform the film formation again.
【００２２】上述したパーティクル低減方法を実施して
いる間、成膜室３内はプラズマ状態であるが、電磁石９
による磁場の形成は、実施しても実施しなくてもどちら
でもよい。While the above-described particle reduction method is being performed, the inside of the film forming chamber 3 is in a plasma state.
The formation of the magnetic field by the method may or may not be performed.
【００２３】上述したパーティクル低減方法では、成膜
が完了した後に、材料ガスを停止して補助ガスのＯ2 及
びＨｅを供給したまま成膜室３内を原料ガスのないプラ
ズマ状態にしているので、パーティクルが捕捉され、成
膜が完了した基板６の上に落下することがない。また、
成膜が完了した基板６を搬送した後も補助ガスのＯ2及
びＨｅを供給したまま成膜室３内をプラズマ状態に保っ
ているので、ウエハ支持台５の上にパーティクルが落下
・堆積することがない。更に、成膜室３内に微量のＮＦ
3 ガスを導入し、気相中に残留するパーティクルと反応
させて気化させているので、新たな基板６にパーティク
ルが付着することがない。In the above-described particle reduction method, after the film formation is completed, the material gas is stopped and the inside of the film formation chamber 3 is kept in a plasma state without the source gas while the auxiliary gases O 2 and He are being supplied. Therefore, the particles are not trapped and fall onto the substrate 6 on which the film formation is completed. Also,
Even after the substrate 6 on which the film formation is completed is transported, the inside of the film formation chamber 3 is kept in a plasma state while supplying the auxiliary gases O 2 and He, so that particles fall and accumulate on the wafer support table 5. Nothing. Further, a small amount of NF is
Since three gases are introduced and reacted with the particles remaining in the gas phase to vaporize, no particles adhere to the new substrate 6.
【００２４】[0024]
【発明の効果】本発明のパーティクル低減方法は、処理
室に原料ガス及び酸素及び不活性ガスを導入し、プラズ
マを発生させてそこで励起・活性化された原子・分子に
より基板の表面に処理が施されるプラズマ処理装置にお
いて、基板の表面に処理が施された後、プラズマを発生
させた状態で原料ガスの導入を停止しているので、微粒
子が捕捉され、非処理時におけるパーティクルを低減す
ることができ、微粒子が基板上に落下することがなくな
る。According to the particle reduction method of the present invention, a raw material gas, oxygen and an inert gas are introduced into a processing chamber, plasma is generated, and the surface of the substrate is treated with atoms and molecules excited and activated there. In the plasma processing apparatus to be performed, after the surface of the substrate is processed, the introduction of the raw material gas is stopped in a state where plasma is generated, so that fine particles are captured and particles during non-processing are reduced. Particles can be prevented from falling on the substrate.
【００２５】また、本発明のパーティクル低減方法は、
処理室に原料ガス及び酸素及び不活性ガスを導入し、プ
ラズマを発生させてそこで励起・活性化された原子・分
子により基板の表面に処理が施されるプラズマ処理装置
において、基板の表面に処理が施された後、プラズマを
発生させた状態で原料ガスの導入を停止して微粒子を捕
捉して微粒子を基板上に落下させないようにし、この状
態で基板を搬出するようにしているので、非処理時にお
けるパーティクルを低減することができ、基板支持台の
上に微粒子が落下することがない。Also, the particle reduction method of the present invention
In a plasma processing system, a raw material gas, oxygen and an inert gas are introduced into a processing chamber, plasma is generated, and the surface of the substrate is processed by atoms and molecules excited and activated there. Is performed, the introduction of the source gas is stopped in a state where the plasma is generated, the fine particles are captured so that the fine particles do not fall on the substrate, and the substrate is unloaded in this state. Particles during processing can be reduced, and fine particles do not drop onto the substrate support.
【００２６】また、本発明のパーティクル低減方法は、
処理室に原料ガス及び酸素及び不活性ガスを導入し、プ
ラズマを発生させてそこで励起・活性化された原子・分
子により基板の表面に処理が施されるプラズマ処理装置
において、基板の表面に処理が施された後、プラズマを
発生させた状態で原料ガスの導入を停止して微粒子を捕
捉しプラズマを発生させた状態で基板を搬出し、基板を
搬出した後、気相中の微粒子を気化させる量のフッ化ガ
スを処理室内に導入し、気相中の微粒子を気化させた後
にフッ化ガスを停止して基板を搬入するようにしたの
で、非処理時におけるパーティクルを低減することがで
き、微粒子が処理が施された基板上に落下することがな
くなるとともに、微粒子が基板支持台の上に落下するこ
とがなくなり、更に、搬入された基板に微粒子が付着す
ることがなくなる。Further, the particle reduction method of the present invention
In a plasma processing system, a raw material gas, oxygen and an inert gas are introduced into a processing chamber, plasma is generated, and the surface of the substrate is processed by atoms and molecules excited and activated there. After the plasma is generated, the introduction of the source gas is stopped in a state where the plasma is generated, the fine particles are captured, the substrate is carried out in a state where the plasma is generated, the substrate is carried out, and the fine particles in the gas phase are vaporized. The amount of fluorinated gas to be introduced is introduced into the processing chamber, and after the fine particles in the gas phase are vaporized, the fluorinated gas is stopped and the substrate is carried in, so that particles during non-processing can be reduced. In addition, the fine particles do not fall on the treated substrate, the fine particles do not drop on the substrate support, and the fine particles do not adhere to the loaded substrate.
【図１】本発明の一実施形態例に係るパーティクル低減
方法を実施するプラズマＣＶＤ装置の概略側面図。FIG. 1 is a schematic side view of a plasma CVD apparatus that performs a particle reduction method according to an embodiment of the present invention.
【図２】本発明の一実施形態例のパーティクル低減方法
の工程説明図。FIG. 2 is a process explanatory view of a particle reduction method according to an embodiment of the present invention.
１ 基部 ２ 容器 ３ 成膜室 ４ 天井板 ５ ウエハ支持台 ６ 基板 ７ 載置部 ８ 支持軸 ９ 電磁石 １０ 鉄心 １１ コイル １２ 三相インバータ電源 １３ 高周波アンテナ １４ 整合器 １５ 高周波電源 １６ ガス供給ノズル １７ 補助ガス供給ノズル １８ 排気系 ２１ バイアス電源 ２２ 静電電源 ２５ 金属板 ２６ セラミックス ３１ 搬入・搬出口 DESCRIPTION OF SYMBOLS 1 Base 2 Container 3 Film-forming chamber 4 Ceiling plate 5 Wafer support 6 Substrate 7 Placement part 8 Support shaft 9 Electromagnet 10 Iron core 11 Coil 12 Three-phase inverter power supply 13 High frequency antenna 14 Matching device 15 High frequency power supply 16 Gas supply nozzle 17 Auxiliary Gas supply nozzle 18 Exhaust system 21 Bias power supply 22 Electrostatic power supply 25 Metal plate 26 Ceramics 31 Loading / unloading port
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K030 AA06 AA14 AA16 BA29 DA06 EA01 FA01 FA04 GA12 HA06 JA05 KA30 KA34 5F004 AA14 AA15 BA20 BB07 BB11 BB18 BB22 CA01 DA17 DA22 DA26 DB00 5F045 AA08 AB03 AB32 AC01 AC11 AC17 AF01 BB15 DP03 DQ10 EB06 EE17 EH11 EM10 EN04 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA06 AA14 AA16 BA29 DA06 EA01 FA01 FA04 GA12 HA06 JA05 KA30 KA34 5F004 AA14 AA15 BA20 BB07 BB11 BB18 BB22 CA01 DA17 DA22 DA26 DB00 5F045 AA08 AB03 AB32 AF01 AC11 DP17 EB06 EE17 EH11 EM10 EN04
Claims (5)
スを導入し、プラズマを発生させてそこで励起・活性化
された原子・分子により基板の表面に処理が施されるプ
ラズマ処理装置において、基板の表面に処理が施された
後、プラズマを発生させた状態で原料ガスの導入を停止
して微粒子を基板上に落下させないようにすることを特
徴とするパーティクル低減方法。In a plasma processing apparatus, a raw material gas, oxygen, and an inert gas are introduced into a processing chamber, plasma is generated, and a surface of a substrate is processed by atoms and molecules excited and activated therein. A method for reducing particles, characterized in that after a surface of a substrate is treated, introduction of a raw material gas is stopped in a state where plasma is generated to prevent fine particles from falling onto the substrate.
スを導入し、プラズマを発生させてそこで励起・活性化
された原子・分子により基板の表面に処理が施されるプ
ラズマ処理装置において、基板の表面に処理が施された
後、プラズマを発生させた状態で原料ガスの導入を停止
して微粒子を基板上に落下させないようにし、この状態
で基板を搬出することで微粒子を基板支持台の上に落下
させないようにすることを特徴とするパーティクル低減
方法。2. A plasma processing apparatus in which a raw material gas, oxygen and an inert gas are introduced into a processing chamber, a plasma is generated, and a surface of the substrate is processed by atoms and molecules excited and activated therein. After the surface of the substrate is processed, the introduction of the raw material gas is stopped in a state where the plasma is generated so that the fine particles do not fall on the substrate, and the substrate is carried out in this state so that the fine particles are transferred to the substrate support table. A method for reducing particles, wherein the particles are prevented from dropping on a surface.
料ガスはシランであり、不活性ガスはヘリウムであるこ
とを特徴とするパーティクル低減方法。3. The method according to claim 1, wherein the raw material gas is silane, and the inert gas is helium.
スを導入し、プラズマを発生させてそこで励起・活性化
された原子・分子により基板の表面に処理が施されるプ
ラズマ処理装置において、基板の表面に処理が施された
後、プラズマを発生させた状態で原料ガスの導入を停止
して微粒子を基板上に落下させないようにし、プラズマ
を発生させた状態で基板を搬出することで微粒子を基板
支持台の上に落下させないようにし、基板を搬出した
後、気相中の微粒子を気化させる量のフッ化ガスを処理
室内に導入し、気相中の微粒子を気化させた後にフッ化
ガスを停止して基板を搬入することを特徴とするパーテ
ィクル低減方法。4. A plasma processing apparatus in which a raw material gas, oxygen, and an inert gas are introduced into a processing chamber, a plasma is generated, and a surface of the substrate is processed by atoms and molecules excited and activated therein. After the surface of the substrate is processed, the introduction of the raw material gas is stopped in a state where the plasma is generated to prevent the fine particles from falling onto the substrate, and the substrate is carried out in a state where the plasma is generated. After the substrate is carried out, an amount of fluorinated gas that vaporizes the fine particles in the gas phase is introduced into the processing chamber, and the fluorinated gas is vaporized after the fine particles in the gas phase are vaporized. A method for reducing particles, wherein a gas is stopped and a substrate is carried in.
あり、不活性ガスはヘリウムであり、フッ素ガスはＮＦ
3 ガスであることを特徴とするパーティクル低減方法。5. The method according to claim 4, wherein the source gas is silane, the inert gas is helium, and the fluorine gas is NF.
A particle reduction method characterized by using three gases.
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| JP2000157798A JP3790410B2 (en) | 2000-05-29 | 2000-05-29 | Particle reduction method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008226891A (en) * | 2007-03-08 | 2008-09-25 | Hitachi High-Technologies Corp | Plasma processing method |
| JP2009094311A (en) * | 2007-10-10 | 2009-04-30 | Fujitsu Microelectronics Ltd | Method of manufacturing semiconductor device |
| US8480912B2 (en) | 2006-02-17 | 2013-07-09 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus and plasma processing method |
| JP2015070233A (en) * | 2013-09-30 | 2015-04-13 | 株式会社東芝 | Manufacturing method of semiconductor device |
| KR20190001518A (en) | 2017-06-26 | 2019-01-04 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
| US10576871B2 (en) | 2017-06-16 | 2020-03-03 | Koito Manufacturing Co., Ltd. | Vehicle lamp |
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2000
- 2000-05-29 JP JP2000157798A patent/JP3790410B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8480912B2 (en) | 2006-02-17 | 2013-07-09 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus and plasma processing method |
| US9011634B2 (en) | 2006-02-17 | 2015-04-21 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus and plasma processing method |
| JP2008226891A (en) * | 2007-03-08 | 2008-09-25 | Hitachi High-Technologies Corp | Plasma processing method |
| US8277563B2 (en) | 2007-03-08 | 2012-10-02 | Hitachi High-Technologies Corporation | Plasma processing method |
| JP2009094311A (en) * | 2007-10-10 | 2009-04-30 | Fujitsu Microelectronics Ltd | Method of manufacturing semiconductor device |
| JP2015070233A (en) * | 2013-09-30 | 2015-04-13 | 株式会社東芝 | Manufacturing method of semiconductor device |
| US10576871B2 (en) | 2017-06-16 | 2020-03-03 | Koito Manufacturing Co., Ltd. | Vehicle lamp |
| KR20190001518A (en) | 2017-06-26 | 2019-01-04 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
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