JP2001334452A - Cutting method for columnar work - Google Patents
Cutting method for columnar workInfo
- Publication number
- JP2001334452A JP2001334452A JP2000160291A JP2000160291A JP2001334452A JP 2001334452 A JP2001334452 A JP 2001334452A JP 2000160291 A JP2000160291 A JP 2000160291A JP 2000160291 A JP2000160291 A JP 2000160291A JP 2001334452 A JP2001334452 A JP 2001334452A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- wire
- cylindrical work
- work
- columnar work
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D57/00—Sawing machines or sawing devices not covered by one of the preceding groups B23D45/00 - B23D55/00
- B23D57/003—Sawing machines or sawing devices working with saw wires, characterised only by constructional features of particular parts
- B23D57/0046—Sawing machines or sawing devices working with saw wires, characterised only by constructional features of particular parts of devices for feeding, conveying or clamping work
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】 本発明は、主にシリコン単
結晶の円柱状ワークを複数枚のウエハに切断する円柱状
ワークの切断方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cutting a columnar work for cutting a silicon single crystal columnar work into a plurality of wafers.
【０００２】[0002]
【従来の技術】 一般に、半導体シリコンの単結晶イン
ゴット（円柱状ワーク）をワイヤーソーでウエハに切断
する場合、図４に示すように、ワイヤー４にシリコンカ
ーバイドの砥粒を含有するスラリー３をスラリー供給管
２から吹き付け、高速で走行するワイヤー４に円柱状ワ
ーク１を押しつけることにより、円柱状ワーク１をウエ
ハに切断することが行われる。尚、円柱状ワーク１は、
作業台６に保持具（ビーム）７で所定の位置に保持さ
れ、複数枚のウエハに切断される。2. Description of the Related Art In general, when a single crystal ingot (columnar work) of semiconductor silicon is cut into wafers by a wire saw, a slurry 3 containing silicon carbide abrasive grains in a wire 4, as shown in FIG. The cylindrical work 1 is cut into wafers by spraying from the supply pipe 2 and pressing the cylindrical work 1 against the wire 4 running at a high speed. In addition, the columnar work 1 is
The work table 6 is held at a predetermined position by a holder (beam) 7 and cut into a plurality of wafers.
【０００３】 このとき、円柱状ワークの切断方法は、
図２に示すように、切削中の切削抵抗を全ての切削位置
において均一にするため、切断位置の円柱状ワーク径に
切削速度を反比例させたスケジュールで行われてきた。
また、円柱状ワークの切断方法は、振動によるウエハ割
れを防止するため、図３に示すように、円柱状ワーク１
の切断終了付近ｃにおける切削速度を抑制することが行
われてきた。[0003] At this time, the cutting method of the columnar workpiece is as follows.
As shown in FIG. 2, in order to make the cutting resistance during cutting uniform at all cutting positions, the cutting speed has been inversely proportional to the diameter of the columnar workpiece at the cutting position.
In order to prevent the wafer from cracking due to vibration, the method for cutting the columnar work is, as shown in FIG.
The cutting speed in the vicinity c of the cutting end has been suppressed.
【０００４】 しかしながら、近年、高番手（＃１５０
０以上）砥粒の使用時や大口径（直径：２００ｍｍ以
上）の円柱状ワーク切断時に、図２〜３に示すスケジュ
ールで行った場合、円柱状ワーク１の切り始め時の切削
速度が速すぎると、ワイヤー切れの発生及びメインロー
ラー上でのワイヤーの溝飛びが多発するという問題があ
った。上記の点を解消するため、円柱状ワークの切り始
め時の切削速度を、ワイヤー切れ等の不具合が起きない
ように設定した場合、円柱状ワークの切断時間が非常に
長くなるため、スループットが下がってしまうという問
題があった。However, in recent years, high counts (# 150
0 or more) When the abrasive grains are used or when cutting a large-diameter (diameter: 200 mm or more) cylindrical work, if the cutting is performed according to the schedule shown in FIGS. In addition, there is a problem that wire breakage and wire groove jump on the main roller occur frequently. In order to solve the above problems, if the cutting speed at the start of cutting the cylindrical work is set so as not to cause problems such as wire breakage, the cutting time of the cylindrical work becomes extremely long, and the throughput decreases. There was a problem that would.
【０００５】[0005]
【発明が解決しようとする課題】 本発明は上記した従
来の課題に鑑みてなされたものであり、その目的とする
ところは、高番手（＃１５００以上）砥粒の使用時や大
口径（直径：２００ｍｍ以上）の円柱状ワーク切断時に
おけるワイヤー切れの発生やメインローラー上でのワイ
ヤーの溝飛びを抑制するとともに、経済的に優れた円柱
状ワークの切断方法を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to use high-count (# 1500 or more) abrasive grains or to use a large diameter (diameter). : 200 mm or more). It is intended to provide a method for cutting a cylindrical work which is economical and suppresses wire breakage at the time of cutting a cylindrical work and jumping of a wire groove on a main roller.
【０００６】[0006]
【課題を解決するための手段】 すなわち、本発明によ
れば、作業台に保持具で保持された円柱状ワークを、高
速で走行するワイヤーに押しつけるとともに、研磨砥粒
を含有するスラリーを該ワイヤーに供給しつつ、該円柱
状ワークをウエハに切断する円柱状ワークの切断方法で
あって、該円柱状ワークの切り始め時に、ワイヤー切れ
等の不具合が生じない切削速度を一定に保持しつつ、該
円柱状ワークの切断面の最大４０％を切削することを特
徴とする円柱状ワークの切断方法が提供される。Means for Solving the Problems According to the present invention, a columnar work held on a worktable by a holder is pressed against a wire running at high speed, and a slurry containing abrasive grains is applied to the wire. While cutting the cylindrical work into wafers, the cutting method of the cylindrical work, at the beginning of the cutting of the cylindrical work, while maintaining a constant cutting speed that does not cause problems such as wire breakage, A method for cutting a cylindrical work is provided, wherein a maximum of 40% of a cut surface of the cylindrical work is cut.
【０００７】 また、本発明では、研磨砥粒の平均粒径
が８μｍ以下であることが好ましく、円柱状ワークの直
径が２００ｍｍ以上であることが好ましい。In the present invention, it is preferable that the average grain size of the abrasive grains is 8 μm or less, and the diameter of the columnar work is 200 mm or more.
【０００８】 更に、本発明では、円柱状ワークの切り
始め時の切削速度が２５０μｍ／ｍｉｎ未満であること
が好ましい。Further, in the present invention, it is preferable that the cutting speed at the start of cutting the columnar work is less than 250 μm / min.
【０００９】[0009]
【発明の実施の形態】 本発明の円柱状ワークの切断方
法は、円柱状ワークの切り始め時に、ワイヤー切れ等の
不具合が生じない切削速度を一定に保持しつつ、円柱状
ワークの切断面の最大４０％を切削するものである。こ
れにより、高番手（＃１５００以上）砥粒の使用時や大
口径（直径：２００ｍｍ以上）の円柱状ワーク切断時に
おけるワイヤー切れの発生及びメインローラー上でのワ
イヤーの溝飛びを抑制するだけでなく、経済的にも優れ
ている。BEST MODE FOR CARRYING OUT THE INVENTION The method for cutting a cylindrical work according to the present invention provides a method for cutting a cut surface of a cylindrical work while maintaining a constant cutting speed at which a trouble such as a broken wire does not occur at the start of cutting the cylindrical work. It cuts up to 40%. This prevents wire breakage when using high-counter (# 1500 or more) abrasive grains or cutting large-diameter (diameter: 200 mm or more) cylindrical workpieces, and suppresses wire groove jumping on the main roller. No, it is also economically good.
【００１０】 以下、本発明の円柱状ワークの切断方法
について、図面に基づいて更に詳細に説明する。図１
は、本発明の円柱状ワークの切断方法の一例を示すもの
であり、（ａ）は円柱状ワークの切削中におけるワイヤ
ーの位置を示す説明図、（ｂ）は円柱状ワークの切削速
度と切削時間との関係を示すグラフ、（ｃ）は円柱状ワ
ークの切削速度の二次微分と切削時間との関係を示すグ
ラフである。Hereinafter, the method for cutting a cylindrical work according to the present invention will be described in more detail with reference to the drawings. FIG.
1A and 1B show an example of a method for cutting a cylindrical work of the present invention, wherein FIG. 1A is an explanatory view showing the position of a wire during cutting of a cylindrical work, and FIG. FIG. 5C is a graph showing a relationship between time and time, and FIG. 5C is a graph showing a relationship between a second derivative of a cutting speed of a cylindrical work and a cutting time.
【００１１】 本発明の円柱状ワークの切断方法の主な
特徴は、従来のように切断位置の円柱状ワーク径に切削
速度を反比例させるのではなく、図１（ｂ）に示すよう
に、円柱状ワークの切り始めから所定の切削量まで一定
の速度で切断することにある。即ち、本発明では、図１
（ｃ）に示すように、円柱状ワークの切り始め時におけ
る切削速度ｙと切削時間ｔとの関数をｙ＝ｆ（ｔ）で表
した場合、この二次微分式Ｆ'（ｔ）が負になる領域を
有することが重要である。The main feature of the method for cutting a cylindrical work of the present invention is that the cutting speed is not inversely proportional to the diameter of the cylindrical work at the cutting position as in the prior art, but as shown in FIG. It is to cut at a constant speed from the start of cutting a columnar work to a predetermined cutting amount. That is, in the present invention, FIG.
As shown in (c), when the function of the cutting speed y and the cutting time t at the start of cutting of the cylindrical workpiece is represented by y = f (t), the secondary differential formula F ′ (t) is negative. It is important to have an area where
【００１２】 これにより、高番手（＃１５００以上）
砥粒（平均粒径が８μｍ以下の微細砥粒）を使用する場
合や切り始め部位の大きい大口径（直径：２００ｍｍ以
上）の円柱状ワークの切削時における円柱状ワークに接
触する瞬間に生じるワイヤーの負荷を軽減することがで
きるため、切断時におけるワイヤー切れの発生やメイン
ローラー上でのワイヤーの溝飛びを抑制することができ
る。[0012] Thereby, high count (# 1500 or more)
When using abrasive grains (fine abrasive grains with an average grain size of 8 μm or less) or when cutting a large-diameter (diameter: 200 mm or more) cylindrical work with a large part to start cutting, a wire generated at the moment of contact with the cylindrical work Therefore, it is possible to suppress the occurrence of wire breakage at the time of cutting and the jump of the wire groove on the main roller.
【００１３】 また、本発明の円柱状ワークの切断方法
は、図１（ｂ）に示すように、円柱状ワークの切り始め
時に、ワイヤー切れ等の不具合が生じない切削速度を一
定に保持しつつ、円柱状ワークの切断面の最大４０％を
切削することが好ましい。これは、上記円柱状ワークの
切断面が４０％を超過する場合、円柱状ワークの切断時
間を更に短縮することができるが、円柱状ワークからそ
れぞれ切断されたウエハの機械的品質（平坦度、平行
度、反り等）を十分に得ることが困難となるからであ
る。また、本発明の円柱状ワークの切断方法は、最も切
削速度が遅くなる部分（図１（ｂ）のｂ参照）の速度を
ある程度高めることができるため、切断時間が必要以上
に伸びることがなく、経済的である。Further, as shown in FIG. 1 (b), the method for cutting a cylindrical work according to the present invention, while starting to cut the cylindrical work, while maintaining a constant cutting speed at which no trouble such as wire breakage occurs. It is preferable to cut a maximum of 40% of the cut surface of the cylindrical work. This is because when the cut surface of the cylindrical work exceeds 40%, the cutting time of the cylindrical work can be further shortened, but the mechanical quality (flatness, flatness, This is because it is difficult to sufficiently obtain the degree of parallelism and warpage. In addition, according to the method for cutting a columnar workpiece of the present invention, the speed of the portion where the cutting speed is the slowest (see b in FIG. 1B) can be increased to some extent, so that the cutting time does not increase more than necessary. Is economical.
【００１４】 尚、本発明では、平均粒径が８μｍ以下
の微細砥粒を用いる場合、円柱状ワークの切り始め時の
切削速度が２５０μｍ／ｍｉｎ未満であればよいが、２
３０μｍ／ｍｉｎ以下であることがより好ましい。In the present invention, when fine abrasive grains having an average particle diameter of 8 μm or less are used, the cutting speed at the start of cutting a columnar workpiece may be less than 250 μm / min.
More preferably, it is 30 μm / min or less.
【００１５】[0015]
【実施例】 本発明を実施例に基づいて、更に詳細に説
明するが、本発明はこれらの実施例に限られるものでは
ない。 （実施例１〜２、比較例１〜２）直径が３００ｍｍのシ
リコンインゴット（円柱状ワーク）を、図４に示すワイ
ヤーソーを用いて、図１（ｂ）に示すスケジュールで、
且つ表１に示す条件でそれぞれ切断を行った（実施例１
〜２、比較例１〜２）。尚、このとき用いたスラリーの
平均粒径は、６．７μｍであり、スラリーの混合比、流
量及び温度等のパラメータについては、公知・公用のも
のを用いた。EXAMPLES The present invention will be described in more detail based on examples, but the present invention is not limited to these examples. (Examples 1 and 2 and Comparative Examples 1 and 2) A silicon ingot (columnar work) having a diameter of 300 mm was prepared using the wire saw shown in FIG. 4 according to the schedule shown in FIG.
The cutting was performed under the conditions shown in Table 1 (Example 1).
2, Comparative Examples 1-2). The average particle size of the slurry used at this time was 6.7 μm, and the parameters such as the mixing ratio, the flow rate, and the temperature of the slurry used were known and public ones.
【００１６】[0016]
【表１】 [Table 1]
【００１７】（考察：実施例１〜２、比較例１〜２）実
施例１〜２では、ワイヤー切れの発生やメインローラー
上でのワイヤーの溝飛びを起こすことなく、円柱状ウエ
ハから適正なウエハを切断することができた。一方、比
較例１では、ワイヤーが円柱状ワークに接触した瞬間に
メインローラー上で破断してしまい、円柱状ワークをこ
れ以上切削することができなかった。また、比較例２で
は、円柱状ワークの切断中にワイヤーの破断は見られな
かったが、メインローラー上でワイヤーの溝飛び（例え
ば、ある溝が空になり、他の一つの溝にワイヤーが２本
入ってしまう等）が発生するため、円柱状ワークから適
正なウエハを切断することができなかった。(Consideration: Examples 1 and 2, Comparative Examples 1 and 2) In Examples 1 and 2, an appropriate wire was cut from a columnar wafer without causing wire breakage or wire groove jump on the main roller. The wafer could be cut. On the other hand, in Comparative Example 1, the wire was broken on the main roller at the moment of contact with the cylindrical work, and the cylindrical work could not be cut any more. In Comparative Example 2, the wire was not broken during the cutting of the cylindrical workpiece, but the wire jumped on the main roller (for example, a certain groove became empty, and the wire was inserted into another groove). However, it is not possible to cut an appropriate wafer from the columnar work.
【００１８】[0018]
【発明の効果】 以上説明した通り、本発明の円柱状ワ
ークの切断方法は、高番手（＃１５００以上）砥粒の使
用時や大口径（直径：２００ｍｍ以上）の円柱状ワーク
切断時におけるワイヤー切れの発生やメインローラー上
でのワイヤーの溝飛びを抑制するだけでなく、経済的に
も優れている。As described above, the method for cutting a cylindrical work according to the present invention can be applied to a method for cutting a wire when using high-count (# 1500 or more) abrasive grains or when cutting a large-diameter (diameter: 200 mm or more) cylindrical work. It not only suppresses the occurrence of breaks and jumps of the wire groove on the main roller, but is also economically excellent.
【図１】 本発明の円柱状ワークの切断方法の一例を示
すものであり、（ａ）は円柱状ワークの切削中における
ワイヤーの位置を示す説明図、（ｂ）は円柱状ワークの
切削速度と切削時間との関係を示すグラフ、（ｃ）は円
柱状ワークの切削速度の二次微分と切削時間との関係を
示すグラフである。1A and 1B show an example of a method for cutting a cylindrical work according to the present invention, wherein FIG. 1A is an explanatory view showing the position of a wire during cutting of a cylindrical work, and FIG. 1B is a cutting speed of the cylindrical work. And (c) is a graph showing the relationship between the second derivative of the cutting speed of the cylindrical work and the cutting time.
【図２】 従来の円柱状ワークの切断方法の一例を示す
ものであり、（ａ）は円柱状ワークの切削中におけるワ
イヤーの位置を示す説明図であり、（ｂ）は円柱状ワー
クの切削速度と切削時間との関係を示すグラフである。FIGS. 2A and 2B are diagrams illustrating an example of a conventional method of cutting a cylindrical work, in which FIG. 2A is an explanatory diagram illustrating a position of a wire during cutting of the cylindrical work, and FIG. It is a graph which shows the relationship between speed and cutting time.
【図３】 従来の円柱状ワークの切断方法の他の例を示
すものであり、（ａ）は円柱状ワークの切削中における
ワイヤーの位置を示す説明図であり、（ｂ）は円柱状ワ
ークの切削速度と切削時間との関係を示すグラフであ
る。3A and 3B show another example of a conventional method for cutting a cylindrical work, wherein FIG. 3A is an explanatory view showing the position of a wire during cutting of the cylindrical work, and FIG. 4 is a graph showing a relationship between a cutting speed and a cutting time of the cutting.
【図４】 円柱状ワークの切断方法の一例を示す概略断
面図である。FIG. 4 is a schematic cross-sectional view showing an example of a method for cutting a cylindrical work.
１…円柱状ワーク、２…スラリー供給管、３…スラリ
ー、４…ワイヤー、５…ワイヤー用ローラー、６…作業
台、７…保持具。DESCRIPTION OF SYMBOLS 1 ... Cylindrical work, 2 ... Slurry supply pipe, 3 ... Slurry, 4 ... Wire, 5 ... Wire roller, 6 ... Work table, 7 ... Holder.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C058 AA09 BA05 BB06 BC02 CA05 DA03 3C069 AA01 BA06 BB03 BB04 CA04 CB01 DA06 EA02 EA03 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3C058 AA09 BA05 BB06 BC02 CA05 DA03 3C069 AA01 BA06 BB03 BB04 CA04 CB01 DA06 EA02 EA03
Claims (4)
クを、高速で走行するワイヤーに押しつけるとともに、
研磨砥粒を含有するスラリーを該ワイヤーに供給しつ
つ、該円柱状ワークをウエハに切断する円柱状ワークの
切断方法であって、 該円柱状ワークの切り始め時に、ワイヤー切れ等の不具
合が生じない切削速度を一定に保持しつつ、該円柱状ワ
ークの切断面の最大４０％を切削することを特徴とする
円柱状ワークの切断方法。1. A cylindrical work held on a work table by a holder is pressed against a wire running at a high speed.
A method for cutting a cylindrical work into wafers while supplying a slurry containing abrasive grains to the wire, wherein a problem such as a broken wire occurs at the start of cutting the cylindrical work. A cutting method for cutting a maximum of 40% of the cut surface of the cylindrical work while maintaining a constant cutting speed.
る請求項１に記載の円柱状ワークの切断方法。2. The method for cutting a columnar work according to claim 1, wherein the average particle size of the abrasive grains is 8 μm or less.
である請求項１又は２に記載の円柱状ワークの切断方
法。3. The method for cutting a cylindrical work according to claim 1, wherein the diameter of the cylindrical work is 200 mm or more.
が、２５０μｍ／ｍｉｎ未満である請求項１〜３のいず
れか１項に記載の円柱状ワークの切断方法。4. The method for cutting a cylindrical work according to claim 1, wherein a cutting speed at the start of cutting the cylindrical work is less than 250 μm / min.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000160291A JP2001334452A (en) | 2000-05-30 | 2000-05-30 | Cutting method for columnar work |
| PCT/US2000/018626 WO2001091982A1 (en) | 2000-05-30 | 2000-07-07 | Method and apparatus for cutting an ingot |
| TW89115232A TW452880B (en) | 2000-05-30 | 2000-07-29 | Method and apparatus for cutting an ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000160291A JP2001334452A (en) | 2000-05-30 | 2000-05-30 | Cutting method for columnar work |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001334452A true JP2001334452A (en) | 2001-12-04 |
Family
ID=18664504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000160291A Withdrawn JP2001334452A (en) | 2000-05-30 | 2000-05-30 | Cutting method for columnar work |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2001334452A (en) |
| TW (1) | TW452880B (en) |
| WO (1) | WO2001091982A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150034658A (en) * | 2013-09-26 | 2015-04-03 | 실트로닉 아게 | Method for simultaneously cutting a multiplicity of wafers from a workpiece |
| JP2022109237A (en) * | 2021-01-14 | 2022-07-27 | セニック・インコーポレイテッド | Method for manufacturing silicon carbide wafer, silicon carbide wafer and wafer manufacturing system |
| US11969917B2 (en) | 2021-01-14 | 2024-04-30 | Senic Inc. | Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012209974B4 (en) * | 2012-06-14 | 2018-02-15 | Siltronic Ag | A method of simultaneously separating a plurality of slices from a cylindrical workpiece |
| JP5958430B2 (en) * | 2013-07-18 | 2016-08-02 | 信越半導体株式会社 | Work cutting method and wire saw |
| CN113799277B (en) * | 2021-08-10 | 2024-04-19 | 威科赛乐微电子股份有限公司 | Crystal multi-line cutting method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02274460A (en) * | 1989-04-12 | 1990-11-08 | Sumitomo Metal Ind Ltd | Cutting speed control method and device for wire cutter |
| JPH06155278A (en) * | 1992-11-25 | 1994-06-03 | Shin Etsu Chem Co Ltd | Cutting by wire saw |
| JP3249373B2 (en) * | 1996-02-21 | 2002-01-21 | 信越半導体株式会社 | Water-soluble slurry wastewater recycling system |
| JP3810170B2 (en) * | 1997-01-29 | 2006-08-16 | 信越半導体株式会社 | Method of cutting workpiece with wire saw and wire saw |
| JPH11188603A (en) * | 1997-12-25 | 1999-07-13 | Tokyo Seiko Co Ltd | Device and method for controlling feed speed of work to be cut in wire-type cutting device |
-
2000
- 2000-05-30 JP JP2000160291A patent/JP2001334452A/en not_active Withdrawn
- 2000-07-07 WO PCT/US2000/018626 patent/WO2001091982A1/en not_active Application Discontinuation
- 2000-07-29 TW TW89115232A patent/TW452880B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150034658A (en) * | 2013-09-26 | 2015-04-03 | 실트로닉 아게 | Method for simultaneously cutting a multiplicity of wafers from a workpiece |
| KR101670132B1 (en) | 2013-09-26 | 2016-10-27 | 실트로닉 아게 | Method for simultaneously cutting a multiplicity of wafers from a workpiece |
| JP2022109237A (en) * | 2021-01-14 | 2022-07-27 | セニック・インコーポレイテッド | Method for manufacturing silicon carbide wafer, silicon carbide wafer and wafer manufacturing system |
| JP7330552B2 (en) | 2021-01-14 | 2023-08-22 | セニック・インコーポレイテッド | Silicon carbide wafer manufacturing method, silicon carbide wafer and wafer manufacturing system |
| US11969917B2 (en) | 2021-01-14 | 2024-04-30 | Senic Inc. | Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW452880B (en) | 2001-09-01 |
| WO2001091982A1 (en) | 2001-12-06 |
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