JP2001332647A - Manufacturing method of resin-sealed semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that, when resin-sealed semiconductor devices are individually pressed and are made to separate from a frame main body by breaking in a manufacturing method of the resin-sealed semiconductor devices, which uses a terminal land frame, there is a possibility that the devices are broken in the case where the uniformity of the pressure to the devices is deteriorated. SOLUTION: A terminal land frame provided within the region of a frame main body is connected with the frame main body through the thin thickness part, which is formed by half cutting the frame and has land constituent bodies formed protuberantly more than the frame main body, is used in the manufacturing method of resin-sealed semiconductor devices. After elements are mounted on the terminal land frame, the upper surface of the frame including the elements is sealed from the entire surface, the bottom of the frame is removed by grinding in a state that the frame is pasted on a resin tape material 17 to form a resin-sealed semiconductor device constituent body 19, and the constituent body 19 is cut into the individual resin-sealed semiconductor devices by a rotating blade 20 to separate the devices from each other. As a result, the manufacturing method of the devices, which enhances the productivity of the devices, can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a resin sealing method using a terminal land frame which is a frame provided with a land body serving as an external terminal in a partially cut state, instead of a conventional lead frame having a beam-shaped lead. The present invention relates to a method of manufacturing a stationary semiconductor device, and more particularly to a method of manufacturing a resin-sealed semiconductor device with improved production efficiency.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices has been required.
Thinning is progressing. In addition, the number of pins has been increased while being small and thin, and a high-density small and thin resin-sealed semiconductor device has been demanded.

[0003] As a conventional resin-encapsulated semiconductor device, Q
A semiconductor package such as an FP (Quad Flat Package) is typified. As a resin-encapsulated semiconductor device that can meet the demand for a further increase in the number of pins and a reduction in thickness in the future, Japanese Patent Nos. 2986787 and 298678
No. 8 and Japanese Patent No. 2997255.

The prior art of the present invention will be described with reference to the techniques disclosed in Japanese Patent Nos. 2,986,787, 2,986,788 and 2,997,255.

FIG. 15 is a plan view showing the structure of a prior art terminal land frame, and FIG. 16 is a sectional view showing the terminal land frame.
The figure shows a partial cross section at -A1. FIG. 17 shows FIG.
FIG. 3 is an enlarged cross-sectional view showing a land structure part in FIG.

As shown in the figure, the terminal land frame comprises a frame main body 1 made of a copper plate or a metal plate used for a normal lead frame such as 42-alloy.
It comprises a plurality of land components 3 which are arranged in a lattice in the area of the frame main body 1, are connected to the frame main body 1 by the thin portion 2, and are formed to protrude from the frame main body 1. . That is, the frame body 1, the land structure 3, and the thin portion 2 are integrally formed from the same metal plate. The land structure 3 has a configuration in which the thin portion 2 is broken by a pressing force in a direction protruding from the frame body 1 and the land structure 3 is separated from the frame body 1. The grid arrangement of the land structures 3 may be arranged in a staggered grid, a grid pattern on a grid, or randomly arranged in a plane, but an arrangement suitable for connection with a semiconductor element to be mounted by a thin metal wire is employed. Things.

[0007] Further, as shown in FIG.
By applying a pressing force in the protruding direction to the bottom portion 3a of the thin portion 2, the thin portion 2 is broken at the broken line portion, and the land structure 3 is separated from the frame body 1. Here, the thin portion 2 is a "joining portion" formed by half-cutting means of the punching process with respect to the frame main body 1 itself, and a portion of the frame main body 1 where a land structure is to be formed is punched using a punch member. Processed,
Without completely punching out, it is stopped halfway through, preferably about halfway, and the part punched out halfway protrudes from the frame body 1, and the protruding part constitutes the land structure 3 and is cut off from the frame body 1. The connecting portions that are connected to each other constitute the thin portion 2. Therefore, the thin portion 2 is extremely thin, and has such a thickness that the thin portion 2 is broken only when a pressing force is applied to the bottom surface portion 3a of the land structure 3 in the protruding direction.

The land structure 3 formed so as to protrude from the frame main body 1 has a protruding amount of the frame main body 1.
The thin portion 2 is broken by the pressing force in the direction in which the land component 3 protrudes from the frame main body 1, and the land component 3 is separated from the frame main body 1. It is configured to be able to realize the configuration described. For example, the thickness of the terminal land frame itself, that is, the thickness of the frame body 1 is 200 [μm], and the protrusion amount of the land structure 3 is 140 [μm] to 180 [μm].
[Μm] (70 [%] to 90 of the thickness of the frame body 10)
[%]). The thickness of the frame body 1 is
The thickness is not limited to 200 [μm], and may be a 400 [μm] thick frame as needed. In addition, the protrusion amount of the land structure 3 is set to 70% to 90% of the frame body thickness of the majority or more, but may be set to the protrusion amount of the half or less.
The protrusion amount can be set within a range where the portion is broken.

The surface of the terminal land frame according to this technique is plated, and a metal such as nickel (Ni), palladium (Pd) and gold (Au) is laminated as necessary. It is appropriately plated. The plating treatment may be performed after forming the land structure 3 or may be performed before forming the land structure on the metal plate. Further, the surface roughness of the terminal land frame is extremely flat and is 0.1 [μm] or less, which affects the releasability from the sealing resin. It is necessary to eliminate unnecessary unevenness.

In this terminal land frame, the protruding upper surface of the land structure 3 is formed into a mushroom shape having a flat upper surface by press forming called coining. By this coining shape, when the semiconductor element is mounted on the terminal land frame and sealed with resin, the sealing resin bites into the land structure, and the adhesion with the sealing resin is improved. Even with single-sided sealing, reliability of resin sealing can be obtained. Further, the shape is not limited to a mushroom shape having a flat top surface, and may be a flat shape having a flat top surface having an anchoring action with a sealing resin such as a key.

In the terminal land frame of this technology, a die pad portion, which is a member on which a semiconductor element is mounted, is not provided, but a part of a group of land structures 3 provided in the region of the frame body 1 is provided. The land structure can be used as a die pad portion to form a land structure for supporting a semiconductor element. As a result, even when the size of the semiconductor element mounted on the terminal land frame varies depending on the product type, a part of the group of land components 3 is appropriately used as a supporting land component. ,
By using the other land structure 3 as a land structure for electrical connection with a semiconductor element mounted thereon, a terminal land frame can be shared,
By mounting a plurality of semiconductor elements having different sizes in one frame, a resin-encapsulated semiconductor device can be obtained.

The number of land structures 3 can be set as appropriate according to the number of pins of the semiconductor element to be mounted. Then, as shown in FIG. 15, the land structure 3 is formed in the area of the frame body 1, but can be formed continuously in the left, right, up and down directions. In addition, although the shape of the land structure 3 is circular, it may be square or rectangular, and the size may be all the same in the terminal land frame, or a resin-encapsulated semiconductor device may be used as a land electrode. In this case, the land structure 3 located in the peripheral portion may be enlarged in order to relieve stress at the time of mounting the substrate. In this technique, the size of the upper surface of the land structure 3 may be 100 [100], as long as the semiconductor element is mounted and the land can be bonded by a thin metal wire such as a gold wire as an electrical connection means. μm] φ or more.

Further, the terminal land frame shown here does not have the inner lead portion, the outer lead portion, the die pad portion and the like as in the prior art, but has the land structure 3 as a land electrode. Are arranged in a lattice or staggered pattern on the surface on which the semiconductor element is mounted, so that a resin-encapsulated semiconductor device is formed using this terminal land frame. A semiconductor device can be realized. Further, since the configuration serving as the electrode is not the beam-shaped lead configuration but the land configuration 3 as in the related art, they can be arranged in a plane, and the degree of freedom in the arrangement of the land configuration 3 is improved. It is possible to cope with the increase in the number of pins. Of course, the arrangement of the land structures 3 is set according to the number of pins of the semiconductor element to be mounted, and a series of arrangements as in the related art may be used.

Next, a method of manufacturing a terminal land frame according to this technique will be described.

FIG. 18 and FIG. 19 are cross-sectional views showing a method of manufacturing a terminal land frame, and are cross-sectional views showing a land structure portion.

First, as shown in FIG. 18, a metal plate 4 serving as a frame body of a terminal land frame is placed on a die 5 of a punching die, and a pressing die 6 is placed from above the metal plate 4.
Hold by. Here, in FIG. 18, the die portion 5 is provided with an opening 7 for punching. A punch member 8 is provided above the metal plate 4, and when the metal plate 4 is pressed and punched by the punch member 8, the pressed portion of the metal plate 4 is placed in the opening 7. It has a punched-out structure.

Next, as shown in FIG. 19, the metal plate 4 fixed at a predetermined position on the die portion 5 is punched from above by pressing with a punch member 8 to form a part of the metal plate 4. Is pressed so as to protrude toward the opening 7 side of the die portion 5, so that a predetermined portion of the metal plate 4 is half-cut, and the land structure 3 is formed. Here, the metal plate 4 is formed by the thin portion 2.
To form a land structure 3 that remains connected to and protrudes from the main body of the metal plate 4.

Here, when a part of the metal plate 4 is punched by the punch member 8, the half-cut state is formed by stopping the pressing of the punch member 8 on the way without completely punching. Is connected to the main body of the metal plate 4 and left without being separated. Further, the contact area of the punch member 8 in contact with the portion of the metal plate 4 where the land structure 3 is formed is smaller than the opening area of the opening 7 provided in the die portion 5. In the step of forming a land structure 3 protruding from the metal plate 4 by pressing a part thereof, the area of the upper surface portion 3 b of the land structure 3 protruding from the metal plate 4 is changed to the land structure connected to the metal plate 4 side. The edge portion of the upper surface on the side where the land structure 3 protrudes is larger than the area of the bottom surface portion 3a of the body 3 and forms the land structure 3 having a curved surface formed by cutting out. With this structure, the formed land component 3 is easily separated by the pressing force in the direction in which it protrudes, that is, the pressing force from the bottom surface portion 3a side of the land component 3. The direction in which it protrudes, that is, the upper surface portion 3b of the land structure 3
It does not separate depending on the pressing force from the outside, and has a structure that separates only into the pressing force from one direction.

The protruding upper surface of the land structure 3 may be subjected to press forming called coining so that the protruding upper surface has a mushroom shape with a flat upper surface. By this coining shape, when the semiconductor element is mounted on the terminal land frame and sealed with resin, the sealing resin bites into the land structure well, an anchor effect is obtained, and The adhesiveness can be further improved, and the reliability of resin sealing can be obtained even with single-sided sealing.

Further, when the land structure 3 is formed on the metal plate 4, the amount of protrusion of the metal plate 4 to be partly protruded is made to be more than a half of the thickness of the metal plate 4 itself. 14 [μm] with respect to the thickness of the metal plate 4.
0 [μm] to 180 [μm] (70 of the thickness of the metal plate itself)
[%] To 90 [%]) The protruding land structure 3 is formed. Therefore, the protruded land structure 3 is connected to the main body of the metal plate 4 by the thin portion 2 having an extremely small thickness. Here, the thickness of the thin portion 2 is a minute thickness of 20 [μm] to 60 [μm] (10 [%] to 30 [%] of the thickness of the metal plate itself). It is easily separated by the pressing force in the protruding direction. In addition,
The thickness of the frame body is not limited to 200 [μm], but may be a 400 [μm] thick frame as needed. In addition, the protrusion amount of the land structure 3 is set to be a majority or more, but may be set to a half or less, and the protrusion amount can be set within a range in which the thin portion 2 is broken.

Here, a description will be given of half-cutting when forming the land structure 3 of this technique. FIG. 20 shows the land structure 3 when pressed against the metal plate 4 to form a semi-cut state.
FIG. 2 is a structural view of a metal plate 4 and a thin portion 2.

As shown in FIG. 20, when the land structure 3 is formed on the metal plate 4, the land structure 3 of the metal plate 4 is formed.
The parts are the punched-out sag part 9 generated by the punching process using the punch member 8 shown in FIGS. 18 and 19, the sheared part 10 sheared by the punch member 8, and the direction in which the land structure 3 itself protrudes. Rupture portion 11 which becomes a rupture surface when the land structure 3 is easily separated by the pressing force of
have. When the land member 3 is formed by punching with the punch member 8, the land member 3 is formed in the order of the punching sag portion 9, the shearing portion 10, and the breaking portion 11. The portion to be the break portion 11 is the thin portion 2, which is shown as having a considerable thickness in the drawing because it is modeled, but is substantially extremely thin. . In the punching of the metal plate 4, the ideal state is A: B = 1: 1, and when the punch member 8 punches the metal plate 4 and punches １ ／ of the thickness of the metal plate 4. The punch member 8 is stopped to complete the punching, and the conditions are appropriately set.

In the blanking process, the shearing portion 10 and the breaking portion 11 are changed by changing the value of the clearance.
When the clearance is reduced, the sheared portion 10 can be made larger than the fractured portion 11 when the clearance is reduced. Conversely, when the clearance is increased, the sheared portion 10 can be made smaller than the fractured portion 11. Can be. Therefore, by setting the clearance to zero and keeping the length of the broken portion 11 short, the timing of the completion of the removal of the metal plate 4 is delayed, so that the removal is not completed even if the punch member 8 enters the metal plate 4 by half or more. It is something that can be done. Here, the clearance indicates the amount of the gap formed by the difference between the size of the punch member 8 and the size of the opening 7 of the die 5.

Next, a method of manufacturing a resin-encapsulated semiconductor device using the terminal land frame will be described with reference to the drawings. FIGS. 21 to 26 are cross-sectional views for each process showing a method for manufacturing a resin-encapsulated semiconductor device using a terminal land frame.

First, as shown in FIG. 21, the frame main body 1 as described above is disposed in the area of the frame main body 1, connected to the frame main body 1 by the thin portion 2, and It comprises a plurality of land structures 3 protrudingly formed, and the land structures 3
A terminal land frame having a configuration in which the thin portion 2 is broken by the pressing force in the direction in which it protrudes from the frame body and the land structure 3 is separated from the frame main body 1 is prepared.

Next, as shown in FIG. 22, the land structure 3 of the terminal land frame is on the protruding surface side,
An adhesive 12 such as a conductive adhesive or an insulating paste is provided on a predetermined first land structure 3 of the land structures 3.
The semiconductor element 13 is mounted and joined by the above. This step corresponds to a die bonding step in an assembling step of the semiconductor device.
Is applied, the semiconductor element 13 is placed, and the semiconductor element 13 is joined by heat treatment. Here, the terminal land frame is easily separated by the pressing force in the direction in which the land structure 3 protrudes, that is, the pressing force from the bottom surface side of the land structure 3. The structure does not separate according to the protruding direction, that is, the pressing force from the upper surface portion of the land structure 3, and separates only into the pressing force from one direction. Thus, even if a downward pressing force acts, the land structure 3 is not separated and die bonding can be performed stably.

Next, as shown in FIG. 23, the semiconductor element 13 bonded to the terminal land frame and the second land structure 3 serving as an external land electrode among the land structures 3 are electrically connected by the thin metal wires 14. Connect to Therefore,
The diameter of the surface of the land structure 3 to which the fine metal wire 14 on the upper surface is connected is 100 [μm] φ or more. Also in this step, since the land structure 3 has a structure that separates only into the pressing force from one direction, the pressing force acts downward when the thin metal wire 14 is connected to the upper surface of the land structure 3. However, the land structure 3 does not separate and can be wire-bonded stably.

Next, as shown in FIG. 24, the sealing resin 15 is applied to the semiconductor element 13 bonded on the terminal land frame and the area of the thin metal wire 14 serving as the electrical connection means in units of individual semiconductor elements. Seal. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. Here, only the surface of the terminal land frame on which the semiconductor element 13 is mounted is sealed with the sealing resin 15, and has a single-sided sealing structure. Since each land structure 3 is provided so as to protrude, even if the sealing resin 15 has a one-side sealing structure because it bites into the step structure, the adhesion between the terminal land frame and the sealing resin 15 can be improved. Can be obtained.

Next, as shown in FIG. 25, in a state where the terminal land frame is fixed, for example, in a state where the end portion of the terminal land frame is fixed and the region sealed with the sealing resin 15 is free, Is applied to the bottom surface of the land structure 3 from below. In this case, by fixing the end of the terminal land frame and pushing up from below by a push-up pin to apply a pressing force, the land structure 3 and the frame main body 1 of the terminal land frame are separated. That is, the ultra-thin portion 2 connecting the land structure 3 and the frame body 1 is separated by being broken by a pushing force generated by pushing up. In the case of pushing up, a part of the semiconductor element 13 near the center, for example, may be used.
May be pushed up, only the land structures 3 at the periphery may be pushed up, or all the land structures 3 may be pushed up. However, the push-up is performed within a range where the land structure 3 does not peel off from the sealing resin 15 due to partial push-up or breakage.

Then, as shown in FIG. 26, the very thin portion connecting the land structure and the frame body is separated by being broken by the pushing force of the push-up, so that the resin-encapsulated semiconductor device 16 is separated. Can be obtained.

Here, the peeling of the sealing resin from the frame main body may be caused by weak adhesion between the sealing resin and the region other than the portion where the land main body of the frame main body is formed, and separation of the land main body. Thereby, the resin-sealed semiconductor device 16 can be taken out. The land structure portion is formed in the sealing resin without being peeled off because the uneven shape bites into the sealing resin. As shown in the figure, the resin-encapsulated semiconductor device 16 has land members 3 arranged on the bottom surface thereof, and the land members 3 are provided so as to protrude from the bottom surface of the sealing resin 15. Are formed. Here, the protrusion amount of the land structure 3 of the resin-encapsulated semiconductor device 16 is an amount obtained by subtracting the protrusion amount of the land structure 3 from the thickness amount of the frame main body, and the stand as the external land electrode of the land structure 3 is formed. An off is formed. Here, 200 [μ
m], the land structure 3 is projected from 140 [μm] to 180 [μm] (70 [%] to 90 [%] of the thickness of the frame main body), so that the standoff height is increased. The thickness is 20 [μm] to 60 [μm] (10 [%] to 30 [%] of the thickness of the frame body),
A land electrode having a standoff at the time of mounting on a substrate can be obtained.

As described above, as the prior art of the present invention, the use of a terminal land frame in which a plurality of land components are connected to the plate material at a thin portion that is easily broken allows the future increase in the number of pins and the reduction in thickness. It was possible to manufacture a resin-sealed semiconductor device that could meet the demand for the development.

[0033]

However, in the method of manufacturing a resin-encapsulated semiconductor device using the terminal land frame described above, the resin-encapsulated semiconductor device is manufactured separately from the frame body by pressing force. Is an excellent method, but when the resin-encapsulated semiconductor device is individually pressed from the frame body to break and separate, the resin-encapsulated semiconductor device may be damaged if the uniformity of the pressing force is deteriorated. In addition, there are problems such as damage to a semiconductor element sealed in the resin-sealed semiconductor device due to application of a pressing force, damage to a thin metal wire portion, and the like.

In the manufacture of a resin-encapsulated semiconductor device using a terminal land frame, when the number of manufactured devices increases, it is necessary to rationalize the manufacturing process, and a plurality of semiconductor elements are mounted on the terminal land frame. After mounting and connecting the fine metal wires, resin sealing of the upper surface is collectively performed on the entire frame, and after obtaining a resin-encapsulated semiconductor device structure in which a plurality of resin-encapsulated semiconductor devices are formed within the frame surface, individual The batch construction method of dividing into two is being studied.
In this case, when the resin-encapsulated semiconductor device component formed by sealing the entire surface of the frame with the sealing resin is separated from the frame main body, the pressing force has a considerable value, and the land configuration of the entire main frame main body has been reduced. In order to accurately separate the land body from the frame body by pressing the body evenly, there are many problems and restrictions as a real problem in addition to the above-described problems.

The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device using a terminal land frame as described above.
The present invention provides a method of manufacturing a resin-encapsulated semiconductor device that does not degrade the quality of the obtained resin-encapsulated semiconductor device and can cope with an increase in the number of manufactured devices in terms of method, cost, and equipment. An object of the present invention is to provide a method of manufacturing a resin-encapsulated semiconductor device using a terminal land frame that can eliminate damage to a built-in semiconductor element or the like by utilizing the structural characteristics of the terminal land frame. .

[0036]

In order to solve the above-mentioned problems, a method for manufacturing a resin-encapsulated semiconductor device according to the present invention comprises a frame main body made of a metal plate and a frame main body provided in a region of the frame main body. Connected to the frame main body by a thin portion, and formed so as to protrude from the frame main body, a plurality of land constituent groups having an upper surface area larger than a bottom surface area, and the land constituent group is A step of preparing a terminal land frame having a configuration in which the thin portion is broken and the land component group is separated from the frame main body only by a pressing force in a direction protruding from the frame main body; and Mounting a plurality of semiconductor elements on a protruding side of a part of the land members of the land member group; Electrically connecting the terminal land frame with a thin metal wire, sealing the entire upper surface side of the terminal land frame with a sealing resin, and sealing the upper surface side. Grinding the bottom surface of the terminal land frame completely sealed with a resin, grinding and removing the frame body of the terminal land frame to form a resin-sealed semiconductor device structure, and the resin-sealed semiconductor device structure And dividing the body into individual semiconductor element units to obtain individual resin-sealed semiconductor devices.

Specifically, the bottom surface of the terminal land frame whose entire upper surface is sealed with a sealing resin is ground, and the frame body of the terminal land frame is ground and removed to form a resin-sealed semiconductor device structure. In the process of
This is a method for manufacturing a resin-encapsulated semiconductor device in a state where the upper surface of a terminal land frame whose entire upper surface is sealed with a sealing resin is adhered to a sheet.

In the step of dividing the resin-encapsulated semiconductor device structure into individual semiconductor element units to obtain individual resin-encapsulated semiconductor devices, the individual steps of the resin-encapsulated semiconductor device structure are performed. This is a method for manufacturing a resin-encapsulated semiconductor device in which the encapsulating resin between the semiconductor elements is cut by a dicing blade and divided.

As described above, after mounting the semiconductor element on the terminal land frame, connecting the thin metal wires, and sealing the entire surface with the resin, the frame body of the terminal land frame is ground and removed. A land component can be left as an external electrode on the bottom surface of the semiconductor device component, and the sealing resin between each resin-encapsulated semiconductor device using a dicing blade or the like with respect to the resin-encapsulated semiconductor device component. This makes it possible to eliminate damage to the resin-encapsulated semiconductor device and efficiently manufacture a highly reliable resin-encapsulated semiconductor device.

The method of manufacturing a resin-encapsulated semiconductor device according to the present invention has a specific configuration in which a bottom surface of a terminal land frame whose upper surface is entirely sealed with a sealing resin is ground, and a frame main body of the terminal land frame is formed. To form a resin-encapsulated semiconductor device structure by grinding off the terminal land frame, the upper surface of which is completely sealed with a sealing resin, and the upper surface of the terminal land frame is adhered to a sheet. In the state of the resin-encapsulated semiconductor device in the next step, the process for obtaining the individual resin-encapsulated semiconductor devices is performed by dividing the resin-encapsulated semiconductor device structure in the next step into individual semiconductor element units. It is a manufacturing method.

With this configuration, similarly to the existing semiconductor wafer back grinding step, the bottom surface is ground in a state where the resin-sealed terminal land frame is adhered to the sheet to collectively form a resin-sealed semiconductor device structure. In addition, the process can be shifted to the next individual resin-sealed semiconductor device while being affixed to the sheet, and can be continuously divided in the same manner as the existing dicing process. Manufacturing can be performed by applying the process, and manufacturing efficiency can be improved.

[0042]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method of manufacturing a resin-sealed semiconductor device using a terminal land frame according to the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing a terminal land frame of the present embodiment. FIG. 2 is a sectional view showing the terminal land frame of the present embodiment.
The cross section of a part of BB1 part is shown. The terminal land frame of the present embodiment has the same configuration as the terminal land frame shown in the above-described prior art.

As shown in the figure, the terminal land frame of the present embodiment has a frame main body 1 made of copper or a metal plate used for a normal lead frame such as 42-alloy, and an area within the frame main body 1. And a plurality of land structures 3 connected to the frame main body 1 by the thin portion 2 and protruding from the frame main body 1. That is, the frame body 1, the land structure 3, and the thin portion 2 are integrally formed from the same metal plate. The land structure 3 has a structure in which the thin portion 2 is broken by a pressing force in a direction protruding from the frame body 11 and the land structure 3 is separated from the frame body 1. The grid arrangement of the land structures 3 may be arranged in a staggered grid, a grid pattern on a grid, or randomly arranged in a plane, but an arrangement suitable for connection with a semiconductor element to be mounted by a thin metal wire is employed. Things.

The land structure 3 protruding from the frame body 1 has an amount of protrusion which is smaller than that of the frame body 1.
The thin portion 2 is broken by the pressing force in the direction in which the land component 3 protrudes from the frame main body 1, and the land component 3 is separated from the frame main body 1. It is configured to be able to realize the configuration described. In the present embodiment, for example, the thickness of the terminal land frame itself, that is,
0 [μm], and the protrusion amount of the land construct 3 is set to 180 [μm].
m] (90 [%] of the thickness of the frame body 10). The thickness of the frame body 1 is not limited to 200 [μm], but may be 400 [μm] if necessary.
Thick frame.

The surface of the terminal land frame of the present embodiment is plated. If necessary, for example, nickel (Ni), palladium (Pd)
And a metal such as gold (Au) is laminated and appropriately plated. The plating treatment may be performed after forming the land structure 3 or may be performed before forming the land structure on the metal plate. Further, the surface roughness of the terminal land frame is extremely flat and is 0.1 [μm] or less, which affects the releasability from the sealing resin. It is necessary to eliminate unnecessary unevenness.

In the terminal land frame of this embodiment, the protruding upper surface of the land structure 3
By press forming called coining, the protruding upper surface shape forms a mushroom shape with a flat upper surface.
By this coining shape, when the semiconductor element is mounted on the terminal land frame and sealed with resin, the sealing resin bites into the land structure well,
The adhesiveness with the sealing resin can be improved, and the reliability of the resin sealing can be obtained even with single-sided sealing. Further, the shape is not limited to a mushroom shape having a flat top surface, and may be a flat shape having a flat top surface having an anchoring action with a sealing resin such as a key.

In the terminal land frame of the present embodiment, the die pad portion, which is a member on which the semiconductor element is mounted, is not provided, but a part of the group of land structures 3 provided in the region of the frame body 1 is provided. Can be used as a land structure for supporting a semiconductor element. As a result, even if the size of the semiconductor element mounted on the terminal land frame varies depending on the type, the land structure 3 can be appropriately adjusted.
Is used as a supporting land structure, and the other land structures 3 are used as a land structure for electrical connection with a semiconductor element mounted thereon.
The terminal land frame can be shared, and a plurality of semiconductor elements having different sizes are mounted in one frame, so that a resin-sealed semiconductor device can be obtained.

The number of land structures 3 can be set as appropriate according to the number of pins of the semiconductor element to be mounted. Then, as shown in FIG.
Is formed in the area of the frame body 1, but can be formed continuously in the left, right, up and down directions. In addition, although the shape of the land structure 3 is circular, it may be square or rectangular, and the size may be all the same in the terminal land frame, or a resin-encapsulated semiconductor device may be used as a land electrode. In this case, the land structure 3 located in the peripheral portion may be enlarged in order to relieve stress at the time of mounting the substrate. In the present embodiment, the size of the top surface of the land structure 3 may be a size that allows bonding when a semiconductor element is mounted and connected by a thin metal wire such as a gold wire as an electrical connection means. [Μm] φ or more.

Further, the terminal land frame of this embodiment does not have the inner lead portion, the outer lead portion, the die pad portion and the like as in the prior art, but has the land structure 3 as a land electrode. Are arranged in a lattice or staggered pattern on the surface on which the semiconductor element is mounted, so that a resin-encapsulated semiconductor device is formed using this terminal land frame. A semiconductor device can be realized. Further, since the configuration serving as the electrode is not the beam-shaped lead configuration but the land configuration 3 as in the related art, they can be arranged in a plane, and the degree of freedom in the arrangement of the land configuration 3 is improved. It is possible to cope with the increase in the number of pins. Of course, the arrangement of the land structures 3 is set according to the number of pins of the semiconductor element to be mounted, and a series of arrangements as in the related art may be used.

Further, instead of the land structure in which the semiconductor element is mounted as shown in this embodiment, a terminal pad frame may be formed by forming a die pad portion having a larger area than the land structure by half cutting.

The method for manufacturing the terminal land frame according to the present embodiment is the same as the method shown in the above-mentioned prior art, and therefore will not be described here.

Next, a method of manufacturing a resin-encapsulated semiconductor device using the terminal land frame of the present embodiment will be described with reference to the drawings. 3 to 12 are cross-sectional views for each process showing a method for manufacturing a resin-encapsulated semiconductor device using a terminal land frame.

First, as shown in FIG. 3, the frame main body 1 as described above is disposed in the area of the frame main body 1, connected to the frame main body 1 by the thin portion 2, and The land structure 3 includes a plurality of projecting land members 3. The land member 3 is broken by a pressing force in a direction in which the land member 3 protrudes from the frame body 1, and the land member 3 is separated from the frame body 1. A terminal land frame having a more separated configuration is prepared.

Next, as shown in FIG. 4, conductive bonding is performed on a predetermined first land structure 3 of the land structures 3 on the side where the land structure 3 of the terminal land frame protrudes. A semiconductor element 13, which is an integrated circuit element such as a microcomputer logic element or a memory element, is mounted and bonded by an adhesive or an adhesive 12 such as an insulating paste. This step is a step corresponding to a die bonding step in an assembling step of the semiconductor device, in which the semiconductor element 13 is bonded by applying the adhesive 12 to the terminal land frame, placing the semiconductor element 13, and heating. Here, the terminal land frame is easily separated by a pressing force in a direction in which the land structure 3 protrudes, that is, by a pressing force from the bottom surface side of the land structure 3.
When the semiconductor element 13 is mounted, the frame is not separated by the direction in which it protrudes, that is, by the pressing force from the upper surface of the land structure 3, and is separated only by the pressing force from one direction. However, even if a downward pressing force acts on the land member 3, the land structure 3 does not separate and can be stably bonded. In the figure, the semiconductor element 1
Reference numeral 3 denotes a state in which two devices are mounted, but actually two or more devices are mounted.

Next, as shown in FIG. 5, the semiconductor element 13 and the land structure 3 joined on the terminal land frame
Among them, the second land structure 3 serving as an external land electrode is electrically connected by a thin metal wire 14 such as a gold (Au) wire. Therefore, the land structure 3 is formed by the fine metal wires 14 on the upper surface.
Has a diameter of 100 [μm] φ or more.
Also in this step, since the land structure 3 has a structure that can be separated only by a pressing force from one direction, the metal thin wire 1
When connecting 4 to the upper surface of the land structure 3, even if a pressing force acts downward, the land structure 3 is not separated and wire bonding can be performed stably.

Next, as shown in FIG. 6, the entire surface of the terminal land frame is made of epoxy resin or the like with respect to the region of the semiconductor element 13 bonded on the terminal land frame and the thin metal wires 14 serving as the electric connection means. It is sealed with an insulating sealing resin 15. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. Here, only the surface of the terminal land frame on which the semiconductor element 13 is mounted is sealed with the sealing resin 15, and has a single-sided sealing structure. Since each land structure 3 is provided so as to protrude, even if the sealing resin 15 has a one-side sealing structure because it bites into the step structure, the adhesion between the terminal land frame and the sealing resin 15 can be improved. Can be obtained. The land structure 3 protruding from the frame is 90% of the frame thickness.
Are provided in the sealing resin 15 so as to protrude.
The thickness of [%] is sealed so that an external electrode can be formed when a resin-sealed semiconductor device is formed.

Next, as shown in FIGS. 7 and 8, a resin tape material 17 is adhered to the upper surface of the sealing resin 15 on the terminal land frame whose upper surface is sealed with the sealing resin 15. Frame body 1 on the bottom of the land frame
Is ground and removed by the grinding member 18. in this case,
Although only the portion of the frame main body 1 on the bottom surface of the terminal land frame is ground and removed by the grinding member 18, the portion of the frame main body 1 is ground and removed.
Each of the land components 3 connected thereto is separated and independent, and the surface of the sealing resin 15 is exposed,
The bottom surface of the land structure 3 is exposed and arranged on the surface of the sealing resin 15. In the finishing, polishing (polishing) is performed to make the surface state of the bottom surface of the sealing resin 15 and the land structure 3 more flat.
Also, a resin tape material 17 to be attached to the upper surface of the sealing resin 15
By using a tape material having an ultraviolet-curable adhesive, when the resin tape material 17 is later removed, the adhesive force is reduced by ultraviolet irradiation so that the resin tape material 17 can be easily removed. Normally, as the resin tape material 17, a tape material used for grinding the back surface of the semiconductor wafer (back grinding) or a tape material used for dividing (dicing) the semiconductor wafer into individual semiconductor elements may be used. .

FIG. 9 shows a state in which the frame body portion on the bottom surface of the terminal land frame has been ground and removed by a grinding member.
And a resin-encapsulated semiconductor device structure 19 having a single-layer structure in which the land structures 3 are arranged on the bottom surface. In this state, the resin tape member 17 is in a state of being stuck.

Next, as shown in FIGS. 10 and 11, the resin-encapsulated semiconductor device structure 19 whose upper surface is adhered to the resin tape material 17 is divided into individual resin-encapsulated semiconductor device units. I do. In this division, the individual resin-sealed semiconductor devices 21 are obtained by full-cutting into individual target semiconductor elements 13 using a dicing rotary blade 20 used in the dicing step. The division into the individual resin-sealed semiconductor devices 21 is not limited to the use of a dicing blade, but may be any method that does not damage the resin-sealed semiconductor device.

Then, by taking out the individual resin-sealed semiconductor devices from the resin tape material, a resin-sealed semiconductor device as shown in FIG. 12 is obtained. The resin-encapsulated semiconductor device 21 of the present embodiment includes a semiconductor element 13 mounted and joined on the land structure 3 with an adhesive 12 such as a silver paste.
The semiconductor device 13 is disposed around the semiconductor device 13.
And a sealing resin 15 that is electrically connected to the semiconductor device 13 by a thin metal wire 14 and that seals the outer periphery of the semiconductor element 13 by exposing the bottom surface of each land member 3 as an external electrode. It is a stop type semiconductor device.

Further, after the bottom surface is ground and polished before being divided into individual resin-sealed semiconductor devices, ball electrodes such as solder balls are provided on land structures 3 constituting external electrodes on the bottom surface, thereby forming a frame. BGA using components
(Ball grid array) can also be formed. Needless to say, even after being divided into individual resin-sealed semiconductor devices, ball electrodes may be individually formed on the land structure 3.

FIGS. 13A and 13B are views showing a resin-encapsulated semiconductor device obtained by the method of manufacturing a resin-encapsulated semiconductor device according to the present embodiment. FIG. 13A is a plan view, and FIG. It is a bottom view.

The resin-encapsulated semiconductor device of this embodiment has an outer periphery sealed with a sealing resin 15, a bottom surface exposed, and side surfaces and an upper surface sealed in the sealing resin 15. And a land structure 3 on which a semiconductor element is mounted. The land structure 3 is arranged in a grid on the bottom surface of the sealing resin 15 to form a land grid array (LGA). Device. Note that the resin-encapsulated semiconductor device shown in FIG. 13 is obtained by edge-cutting a package.

In the resin-sealed semiconductor device of the present embodiment, as shown in the cross-sectional view of FIG. 14, the sealing resin 15 between the land structures 3 exposed as external electrodes has a curved surface in the thickness direction. It has a recess 22. FIG.
14A is a main cross-sectional view of the resin-encapsulated semiconductor device, and FIG. 14B is an enlarged cross-sectional view of a region inside the circle in FIG.

The recesses 2 are formed in the sealing resin 15 between the land structures 3.
Although the land structure 3 of the present embodiment does not have a standoff due to the structure having the two, the land structure 3 is finer than the sealing resin 15 due to the concave portion 22 of the resin portion between the land structures 3. Since the protrusions are small, the mounting strength at the time of mounting the substrate can be improved. This sealing resin 15
In the grinding step of the method of manufacturing the resin-encapsulated semiconductor device described above, the sealing resin 15 has the land structure 3 due to the difference in the grinding rate of the material between the land structure 3 (metal) and the sealing resin 15. This is because the grinding rate is higher than that of the body 3 so that the recesses 22 are formed and ground. In particular, by using a grinding member having an elastic grinding surface as a grinding member used for grinding, the concave portion 22 can be efficiently formed. Therefore, the manufacturing method of the resin-encapsulated semiconductor device according to the present embodiment has the effect of improving the efficiency of the manufacturing method and the reliability of the manufactured resin-encapsulated semiconductor device, The effect of improving the mounting strength at the time of mounting the device on the substrate can also be obtained.

As described above, according to the method of manufacturing a resin-encapsulated semiconductor device using a terminal land frame as described in the present embodiment, a semiconductor element is mounted on a terminal land frame, a thin metal wire is connected, and after the entire surface is resin-sealed, Since the frame body of the terminal land frame is removed by grinding, the land structure can be left as an external electrode on the bottom surface of the formed resin-encapsulated semiconductor device structure,
Since the sealing resin between the resin-encapsulated semiconductor devices is cut with a dicing blade or the like for the resin-encapsulated semiconductor device structure, damage to the resin-encapsulated semiconductor device is eliminated, and a highly reliable resin is removed. A sealed semiconductor device can be manufactured efficiently.

In the method of manufacturing the resin-encapsulated semiconductor device according to the present embodiment, similarly to the back grinding process of the existing semiconductor wafer, the bottom surface is ground while the resin-sealed terminal land frame is adhered to the sheet material. Then, the resin-encapsulated semiconductor device structure can be formed in a lump and, further, while being affixed to the sheet material, the process proceeds to a division process into the next individual resin-encapsulated semiconductor devices, and the existing Since continuous division can be performed similarly to the dicing step, the production can be performed by applying the existing production steps, and the production efficiency can be improved.

Of course, land structures electrically connected to the semiconductor elements can be arranged as external electrodes on the bottom surface of the manufactured resin-encapsulated semiconductor device, and a surface-mount type semiconductor device can be obtained. The reliability of substrate mounting can be improved as compared with the conventional mounting by lead bonding. Further, the resin-encapsulated semiconductor device manufactured in the present embodiment does not use a substrate provided with land electrodes as in a BGA type semiconductor device, and uses a terminal land frame as a semiconductor device. Since the device is configured, it is more advantageous than a conventional BGA type semiconductor device in terms of mass productivity and cost. Furthermore, in the product processing process, the lead cut process and lead bend process, which were necessary for separation from the frame as in the past, can be eliminated, eliminating damage to the product due to lead cut and restrictions on cutting accuracy. It is possible to provide innovative technology with enhanced cost capabilities through reduction.

[0070]

As described above, according to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, a semiconductor element is mounted on a terminal land frame, fine metal wires are connected, and after the entire surface is resin-sealed, the frame body of the terminal land frame is ground. Since the land structure can be left as an external electrode on the bottom surface of the formed resin-encapsulated semiconductor device structure,
Since the sealing resin between the resin-encapsulated semiconductor devices is cut with a dicing blade or the like for the resin-encapsulated semiconductor device structure, damage to the resin-encapsulated semiconductor device is eliminated, and a highly reliable resin is removed. This is an excellent method for efficiently manufacturing a sealed semiconductor device with high productivity.

[Brief description of the drawings]

FIG. 1 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a method for manufacturing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a method for manufacturing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 5 is a sectional view showing the method for manufacturing the resin-sealed semiconductor device according to the embodiment of the present invention;

FIG. 6 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 7 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 8 is a sectional view showing the method for manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 9 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 10 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 11 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 12 is a sectional view showing the method for manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 13 is a sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 14 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 15 is a plan view showing a terminal land frame shown in the prior art.

FIG. 16 is a sectional view showing a terminal land frame shown in the prior art.

FIG. 17 is a sectional view showing a terminal land frame shown in the prior art.

FIG. 18 is a sectional view showing a method for manufacturing a terminal land frame shown in the prior art.

FIG. 19 is a sectional view showing a method of manufacturing a terminal land frame shown in the prior art.

FIG. 20 is a configuration diagram showing a terminal land frame shown in the prior art.

FIG. 21 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device shown in the prior art.

FIG. 22 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device shown in the prior art.

FIG. 23 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device shown in the prior art.

FIG. 24 is a sectional view showing a method of manufacturing a resin-sealed semiconductor device shown in the prior art.

FIG. 25 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device shown in the prior art.

FIG. 26 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device shown in the prior art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Frame main body 2 Thin part 3 Land structure 4 Metal plate 5 Die part 6 Pressing die 7 Opening 8 Punch member 9 Pull-out sagging part 10 Shearing part 11 Breaking part 12 Adhesive 13 Semiconductor element 14 Fine metal wire 15 Sealing resin 16 Resin-sealed semiconductor device 17 Resin tape material 19 Resin-sealed semiconductor device structure 20 Rotating blade 21 Resin-sealed semiconductor device 22 Recess

Claims (4)

[Claims] 1. A frame main body made of a metal plate, and disposed in a region of the frame main body, connected to the frame main body by a thin portion, formed so as to protrude from the frame main body, and have an area of a bottom surface thereof. The land structure group is composed of a plurality of land structure groups having an upper surface area larger than that of the land structure group, and only the pressing force in the direction protruding from the frame main body causes the thin portion to be broken and the land structure group to be broken. A step of preparing a terminal land frame having a configuration separated from the frame main body; and a step of mounting a plurality of semiconductor elements on a protruding side of a part of the land structures of the land structure group of the terminal land frame. ,
Electrically connecting each mounted semiconductor element and each land structure with a thin metal wire; and enclosing a plurality of the mounted semiconductor elements and sealing the entire upper surface side of the terminal land frame with a sealing resin. Stopping and grinding the bottom surface of the terminal land frame whose entire upper surface is sealed with a sealing resin, and grinding and removing the frame body of the terminal land frame to form a resin-sealed semiconductor device component. And dividing the resin-encapsulated semiconductor device component into individual semiconductor element units to obtain individual resin-encapsulated semiconductor devices. Manufacturing method. 2. The step of grinding a bottom surface of a terminal land frame whose entire upper surface is sealed with a sealing resin and grinding and removing a frame body of the terminal land frame to form a resin-sealed semiconductor device structure. 2. The method of manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein the process is performed in a state where the upper surface of the terminal land frame whose entire upper surface is sealed with a sealing resin is adhered to a sheet. 3. A resin-encapsulated semiconductor device structure,
In the step of dividing into individual semiconductor element units and obtaining individual resin-encapsulated semiconductor devices, the sealing resin between the individual semiconductor elements of the resin-encapsulated semiconductor device structure is cut and divided by a dicing blade. The method for manufacturing a resin-encapsulated semiconductor device according to claim 1. 4. A step of grinding a bottom surface of a terminal land frame whose entire upper surface is sealed with a sealing resin and grinding and removing a frame body of the terminal land frame to form a resin-sealed semiconductor device structure. This is performed in a state where the upper surface side of the terminal land frame whose entire upper surface side is sealed with the sealing resin is attached to the sheet, and the terminal land frame is attached to the sheet while the terminal land frame is attached to the sheet. 2. The method of manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein a step of dividing the semiconductor device into individual semiconductor elements and obtaining individual resin-encapsulated semiconductor devices is performed.