JP2001326217A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of controlling a plasma distribution when high-frequency electromagnetic waves of different frequencies are applied to a discharge mechanism in the plasma processing device in a case of carrying out plasma processing such as etching or CVD for manufacturing a semiconductor device. SOLUTION: An antenna 11 as a discharge mechanism is connected to a first power supply 13 and a second power supply 15, and at least either of them is turned OFF or ON so as to control a distribution of plasma.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus for performing uniform processing over the entire surface of a large-diameter wafer having a diameter of 200 mm or more.

[0002]

2. Description of the Related Art Plasma etching for producing a semiconductor device such as a high-density integrated circuit (LSI) will be described as an example of plasma processing. First, a new thin film is formed (film formation), a resist is applied (resist application), and a part of the resist is removed using light (exposure and development). Next, a part of the thin film is removed by plasma processing (plasma etching). At this time, only the portion of the thin film not covered with the resist is removed. Then, after the etching, the resist becomes unnecessary and is removed (ashed). Such film formation, resist coating, exposure and development,
A semiconductor device is produced by repeating a series of steps of plasma etching and incineration.

[0003] Among these series of steps, in the etching step, fine processing such as digging or drilling a groove of 0.2 µm or less is performed. Moreover, the same shape is processed on the entire surface of the wafer at the same speed. Therefore, ions flowing from the plasma to the wafer are often made uniform over the entire surface of the wafer. Here, the amount of ions flowing into the wafer is measured as an ion current (ICF). In order to make the ICF uniform, it is important to generate a plasma having a uniform density. Further, the size of a wafer to be subjected to plasma processing is increasing year by year. To be specific, at present 200mm in diameter
It is considered that a wafer having a diameter of 300 mm will be used soon.

When performing plasma etching, a plasma is generated by flowing a process gas into a plasma processing chamber to perform plasma processing. Here, the thin film to be etched includes aluminum, polycrystalline silicon, a silicon oxide film, and the like, and the process gas varies depending on the type of the thin film. Here, a silicon oxide film (hereinafter, referred to as an oxide film) will be described as an example. In this case, the process gas is a fluorocarbon, for example, CF ₄ , CHF ₃ , C
A gas including ₄ F _8.

[0005] In order to perform such plasma etching, plasma of a process gas must be generated.
One method for that is Electron Cyclotron Resonance (ECR). This is a method of generating a plasma by applying a magnetic field and further applying a high frequency to a discharge mechanism such as an antenna. When a magnetic field is applied, electrons in the plasma receive Lorentz force and rotate around magnetic lines of force. When the period of the rotation coincides with the period of the high-frequency electric field component, the electrons are continuously accelerated and plasma is generated efficiently. Also, if the electrons rotate around the lines of magnetic force, it becomes difficult for the electrons to move away from the lines of magnetic force. Therefore, by applying a magnetic field, the diffusion of the plasma can be suppressed and the density of the plasma can be easily increased. for that reason,
Even if the rotation of the electrons does not coincide with the period of the applied high frequency and ECR does not occur, the density of the plasma can be increased by applying the magnetic field. However, the effect of increasing the plasma density is greater when ECR occurs. Since etching is performed using ions flowing from the plasma into the wafer, high-speed etching can be performed by increasing the density of the plasma.

When etching an oxide film, it is often desirable to etch only the oxide film without etching a resist, a silicon nitride film, or polycrystalline silicon. For that purpose, Japanese Patent Application Laid-Open No. 9-321
As disclosed in Japanese Patent Publication No. 031, in order to control the dissociated active species in the plasma, a high frequency having a frequency different from the high frequency for generating the plasma may be superimposed and applied to a discharge mechanism such as an antenna. This is to promote the reaction on the antenna surface and control the dissociated active species in the plasma.

As described above, a plasma is generated by flowing a process gas, applying a plurality of high-frequency waves having different frequencies to a discharge mechanism, and causing ions in the plasma to flow into a wafer, thereby performing plasma processing.

[0008]

When performing the above-described plasma processing, it is necessary to perform uniform processing over the entire surface of the wafer. For example, in the case of plasma etching, it is necessary to perform uniform etching at a uniform speed. To this end, it may be desirable to generate uniform plasma in the plasma processing chamber to make the plasma density uniform, and to make the ion current (ICF) flowing from the plasma to the wafer uniform. In addition, an ICF distribution slightly different from the uniform ICF distribution may be desirable in order to perform uniform etching. That is, in order to perform uniform etching, it is important that the ICF distribution can be controlled not only uniformly but also nearly uniformly.

Further, since etching is performed using ions flowing from the plasma into the wafer, it is desirable to generate high-density plasma.

Accordingly, an object of the present invention is to provide a plasma processing apparatus which applies a plurality of high-frequency waves having different frequencies to a discharge mechanism, not only to generate plasma having a uniform ICF distribution but also to control the ICF distribution. It is an object of the present invention to provide a plasma processing apparatus capable of generating high-density plasma.

[0011]

As described above, in a plasma processing apparatus that applies a plurality of high-frequency waves having different frequencies to a discharge mechanism, high-density plasma is generated, and one output of the high-frequency wave applied to the discharge mechanism is output. , The ICF distribution changes. Therefore, the ICF distribution can be controlled by time-modulating the output of one or more of the high frequencies of a plurality of different frequencies applied to the discharge mechanism. In other words, when the high-frequency output is time-modulated, the ICF distribution with the high-frequency output being large and the ICF distribution with the low-output being repeated are repeated, and the average ICF distribution within a certain time is obtained by averaging two types of ICF distributions. Becomes Then, when the waveform of the time modulation is changed,
The ICF distribution averaged over time changes. Therefore, not only can a uniform ICF distribution be generated, but also the ICF distribution can be controlled in a nearly uniform state.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described using an apparatus for etching an oxide film by ECR plasma as an example of a plasma processing apparatus. ECR to which the present invention is applied
FIG. 1 shows the configuration of the oxide film etching apparatus. The inside of the plasma processing chamber 1 is exhausted by an exhaust device 3 via a valve 2. Here, by adjusting the opening of the valve 2, the inside can be maintained at a predetermined pressure. A sample stage 5 for fixing the wafer 4 is provided below the plasma processing chamber 1, and the sample stage 5 is connected to a bias power supply 7 via a bias matching unit 6. The process gas 10 is supplied through the shower plate 8 and the flow meter 9. Here, the shower plate 8 and the flow meter 9 are a part of the process gas introduction mechanism.

A conductive antenna 11 is provided above the plasma processing chamber 1 facing the wafer 4 as a discharge mechanism, that is, a discharge mechanism. The antenna 11 is connected to a first power supply 13 via a first matching unit 12 in order to apply a high frequency for generating plasma. The antenna 11 is also connected to a second power supply 15 via a second matching device 14. Here, the frequency of the second power supply 15 is a power supply having a frequency different from that of the first power supply 13.

The output of the second power supply 15 can be time-modulated. For example, the ON state and the OFF state can be intermittently repeated as shown in FIG. 2 (ON / OFF control). Here, the first power supply 13 and the second power supply 15 may be integrated. The main purpose of the second power supply 15 is to control the dissociation active species in the plasma, as described in JP-A-9-321031.

In the apparatus of this embodiment, a wafer having a large diameter of 200 mm or more, for example, 300 mm in diameter is processed.
Therefore, the diameter of the plasma processing chamber 1 is about 300 mm to 500 mm, which is slightly larger than the wafer. The frequency of the first power supply 13 is 450 MHz, and the wavelength is 66 MHz.
At 7 mm, the half wavelength is 333 mm. The length of this half wavelength is about the same as the diameter of the plasma processing chamber (1/2 to 2 times).
It is. The frequency of the second power supply 15 is 13.56 M
Hz.

A coil 16 and a yoke 17 are provided outside the plasma processing chamber 1, and can generate a magnetic field for generating ECR plasma. Further, even when the rotation of electrons due to the Lorentz force does not coincide with the period of the high frequency and ECR does not occur, the diffusion of plasma can be prevented by applying a magnetic field, and high-density plasma can be generated. However, when plasma is generated by the ECR method, higher-density plasma can be generated.

When generating plasma, a process gas 10 is supplied, a current is supplied to the coil 16 to generate a magnetic field, and a high frequency is applied to the antenna 11 from the first power supply 13 and the second power supply 15. Generates plasma.

IC of plasma generated in this way
One example of the F distribution is shown in FIGS. There is a case where the ICF at the center becomes large as shown in FIG. 3A and a case where the ICF at the outer periphery becomes large as shown in FIG. 3B. Here, the uniformity of FIGS. 3A and 3B is ± 22% and ± 16%, respectively. Here, “uniformity = (max−min) / (max + min) * 100”. It should be noted that the ICF distribution shown in this figure is measured by setting the current of the coil 16 to a value different from a normal value for explaining the present invention, and the ICF distribution is adjusted by adjusting the current of the coil 16. Uniform plasma can also be generated.

In this example, the output of the first power supply 13 is 1200 W in both cases (a) and (b) of FIG. The output of the second power supply 15 is 2 in FIG.
00W, and 0W in FIG. 3B. Thus, the ICF distribution changes according to the output of the second power supply 15.

Here, the output of the second power supply 15
The reason why the CF distribution changes will be described. At the boundary between the plasma and the solid, there is a region where the electron density is lower than that of the plasma bulk, which is called an ion sheath. Since this electron sheath has a low electron density, a high frequency is easily propagated as compared with a plasma bulk. And the thicker the ion sheath,
High frequencies are easier to propagate. The detailed reason why high frequencies cannot be propagated in high-density plasma is described in some books. For example, "Plasma Basic Engineering, Supplement 2
Edition ”(author: Nobutsu Tsutsui, publishing office: Ritsuru Uchida), page 225.

The main purpose of the second power source is to control the dissociated active species in the plasma, but it also has the effect of increasing the thickness of the ion sheath at the boundary between the antenna 11 and the plasma.
And, when the ion sheath becomes thicker, the high frequency is easily propagated.

When the output of the second power supply 15 is small, for example, 0 W, the ion sheath at the boundary between the antenna 11 and the plasma is thin. Therefore, the high frequency from the first power supply 13 does not sufficiently propagate to the center of the antenna 11, and plasma is generated at the outer periphery of the antenna 11. Since the ICF distribution reflects the plasma density, the ICF
The F distribution also has a peripheral height. When the output of the second power supply 15 is 200 W, the ion sheath at the boundary between the antenna 11 and the plasma becomes thick, so that the high frequency propagates through the portion to the center of the antenna 11. And IC
The F distribution increases at the center. For this reason, the plasma density distribution and ICF
The distribution can be changed.

When performing plasma processing by generating plasma, it is important to control the ICF distribution according to the plasma processing. Here, a method of making the plasma and ICF distribution uniform by applying the present invention will be described. By repeating the ON state of the second power supply 15 at 0 W, ie, off, and the state of 200 W, ie, on (on / off control), it is possible to make the average ICF uniform for a certain time, for example, one second. An example is shown below. Here, the second power supply 13
Is turned on for 0.38 seconds and turned off for 0.62 seconds. As a result, I shown in FIG.
The CF distribution and the ICF distribution shown in FIG.
The average ICF distribution for one second can make the uniformity of the ICF within ± 5% as shown in FIG. As described above, a uniform ICF distribution can be obtained by repeating the ON and OFF states of the second power supply 15.
As described above, when the second power supply 15 is repeatedly turned on and off, plasmas having different ICF distributions are repeatedly generated, so that two different types of ICF distributions are averaged.
Then, by adjusting the ratio of the time when the second power supply is on, that is, the duty ratio, it is possible to generate the plasma having the target ICF distribution.

The output of the second power supply 15 is 0W and 20W.
Comparing the case of 0 W, the ICF distribution has changed moderately. However, even if the output of the second power supply 15 is set to be larger than 200 W, for example, 400 W, the first power supply 13
In this case, an ion sheath having a sufficient thickness is generated for transmitting a high frequency wave from the ICF, and the ICF distribution does not change significantly. However, the surface reaction of the antenna 11 can be controlled by changing the output when the second power supply 15 is on. That is, the ICF distribution can be controlled by the ratio (duty ratio) of the time during which the second power supply 15 is on, and the dissociated active species in the plasma can be controlled by the output of the second power supply 15. This makes it possible to independently control the ICF distribution and the dissociated active species in the plasma.

The main purpose of the second power supply 15 is to use the antenna 1
Since the dissociation active species in the plasma is controlled by the reaction on one surface, if the area where the plasma contacts the discharge mechanism is increased by using a flat discharge mechanism such as the antenna 11, the control of the dissociation active species is performed. This makes it easier to independently control the ICF distribution and the dissociated active species in the plasma.

The coil 16 and the yoke 1 which are magnetic field generating mechanisms
In the case where a magnetic field is generated with the use of the magnetic field 7 and plasma is generated by the ECR method, high-density plasma can be generated. In addition, even if the rotation of electrons due to Lorentz force does not coincide with the period of the high frequency, diffusion of plasma is suppressed by applying a magnetic field, and high-density plasma can be generated. However, application of a magnetic field suppresses the diffusion of plasma, making it difficult to control the ICF distribution. In such a case, the second power supply 15 is turned on.
If the ICF distribution is controlled by performing the off-control, high-density plasma with good controllability can be generated.

The frequency of the first power supply 13 is 450 MHz. Here, the first power supply 13 applied to the discharge mechanism
Is 500 MHz or less, the wavelength of the electromagnetic wave at that frequency is 600 mm or more, and the half wavelength is 300 mm or more. By the way, when a large diameter wafer having a diameter of 200 mm to 300 mm is subjected to plasma processing, the size of the plasma processing apparatus is about 300 mm to 500 mm, which is slightly larger. Therefore, the half-wave length of the electromagnetic wave is equal to or longer than the diameter of the plasma processing chamber, so that a higher-order electric field mode is hardly generated in the plasma processing chamber 1, and the plasma density distribution and ICF The distribution is generally uniform. Also,
When high-density plasma is generated at this frequency, the electromagnetic wave passes through the ion sheath portion, so that the change in the ICF distribution becomes large when the second power supply 15 is on and off. Therefore, the frequency of the first power supply 13 is set to 500 MHz
By performing on / off control of the second power supply 15 as described below, it is possible to change the distribution substantially uniformly. Furthermore, if the discharge mechanism is a flat plate type like the antenna 11 and a magnetic field is applied by a magnetic field generation mechanism to generate plasma by ECR, high-density plasma capable of effectively controlling the ICF distribution and dissociated active species can be generated. Can be.

When uniformly etching an insulating film, particularly an oxide film, it is desirable to generate a high-density plasma capable of effectively controlling the ICF distribution and the dissociated active species. These preferable conditions are that the discharge mechanism is a flat plate type like the antenna 11, a magnetic field is applied, a high frequency having a frequency of 500 MHz or less is applied to the discharge portion, and a high frequency having a frequency different from this is different. By applying the high frequency of the frequency to the discharge part and controlling it on / off,
Achieved.

In the first embodiment, an example in which an oxide film is etched has been described. However, the present invention is also applicable to etching of other insulating films, for example, a low dielectric constant film containing fluorine or carbon, and a film of an organic compound. The invention can be applied. Also, aluminum,
The present invention can be applied to the etching of conductive films such as polycrystalline silicon (polysilicon) and tungsten silicide, as well as metal films such as tungsten and copper. Although etching is described as an example of plasma processing, the present invention can be applied to plasma processing such as CVD and surface modification. In the embodiment, the process gas is a CF-based gas for etching the oxide film. However, the process gas varies depending on the plasma processing. For example, if it is an organic film, it becomes a gas containing nitrogen or hydrogen,
If it is a metal film, it becomes a gas containing chlorine. This applies to the following.

In the first embodiment, since the second power supply 15 is on / off controlled, the amplitude of the high frequency is instantaneously increased. However, modulation in which the amplitude of the high frequency continuously changes in magnitude and the output also changes continuously, that is, AM
Modulation may be performed. This applies to the following.

Although the first embodiment aims at a uniform ICF distribution, the present invention can be applied to a case where the distribution is such that the ICF becomes large at the central portion or the outer peripheral portion. As an example, a method of generating a plasma with a uniformity of ± 10% due to a large ICF at the center. FIG.
(A) and (b) are the same as (a) and (b) in FIG. 3. The output of the first power supply 13 is 1200 W, and the second power supply 15 is on in the case of (a). It is off in the case of (b).
Here, the second power supply 15 is turned on and off, and the duty ratio is set to 0.57, that is, "ON time: OFF time =
0.57: 0.43 ", the ICF distribution has a uniform height of ± 10% at the center height. In this way, turn on the second power supply
By performing the off-control, not only the ICF distribution can be made uniform, but also the control can be performed. This applies to the following.

In the first embodiment, an example is shown in which two power supplies are connected to the discharge mechanism and one of them is turned on / off. However, the ICF distribution can also be controlled by connecting three or more power supplies to the discharge mechanism and performing on / off control of one or more (or all) of those power supplies. This applies to the following.

In the first embodiment, an example in which plasma is generated by the ECR method has been described. However, depending on the current value of the coil 16, plasma is generated by the capacitive coupling method instead of the ECR method. The present invention can be applied to such a case. Further, the present invention can be applied to a case where the current value of the coil 16 is zero, that is, a case where no magnetic field is applied. In this case, since the coil 16 and the yoke 17, which are magnetic field generating mechanisms, are unnecessary, the magnetic field generating mechanism does not need to be provided.

In the first embodiment, the discharge method is the ECR method, and the main purpose of the second power supply is to control the dissociated active species in the plasma. However, the present invention can be applied if the distribution of the plasma is changed by repeatedly turning on and off the second power supply. As a second embodiment of the present invention, a discharge method is an inductively coupled plasma (Inductively coupled plasma).
The case where the purpose of the second power supply is to generate plasma in the Coupled Plasma (ICP) method is shown. FIG. 5 shows the device configuration in this case.

In this example, the discharge mechanism is a two-system coiled antenna, each of which is connected to a different power supply. The apparatus has a plasma processing chamber 101 and a valve 102.
And an exhaust device 103. Then, there is a sample stage 105 for fixing the wafer 104. Further, there are a bias matching unit 106 and a bias power supply 107 for applying bias power to the wafer 104. Then, the process gas 110 is supplied through the mass flow controller 109. As a discharge mechanism for generating plasma by inductive coupling, there are a coiled inner antenna 111a and an outer antenna 111b. The inner antenna 111a is connected to a first power supply 113 via a first matching device 112. The outer antenna 111b is connected to the second matching unit 114.
, And connected to the second power supply 115. Also in this apparatus, the plasma distribution can be changed by turning on / off the second power supply, thereby changing the ICF distribution.

When the power supply for plasma generation is turned on / off, it is known that negative ions are generated while the power supply for plasma generation is off, and damage can be reduced and the selectivity can be improved. (For example, JP-A-11-16892). That is, the on / off control of the power supply for plasma generation can improve the etching characteristics. Therefore, when a plurality of power supplies of different frequencies for plasma generation are connected to the discharge mechanism as in the second embodiment and the power supply is turned on / off, not only the ICF distribution is controlled but also the etching characteristics are improved. It can also be done.

The first and second embodiments show an example in which the duty ratio of the on / off control is constant. However, during the etching, the duty ratio and the second power 1
5 may be changed. This is because by changing the duty ratio, damage can be reduced and the selection ratio can be improved.

In the apparatus of the second embodiment, the upper part and the side wall of the plasma processing chamber are integrated. However, the present invention can be applied even if the shape of the plasma processing chamber is different from those of the first and second embodiments. For example, as shown in FIG.
When plasma is generated by the inductive coupling method, the upper part of the plasma processing chamber may be the quasi-insulator plate 208. Here, the quasi-insulator plate 208 is a plate having a dielectric or a large resistivity (for example, having a resistivity of 1 Ωcm or more). The shape of the quasi-insulator plate 208 may be a flat plate as shown in FIG. 6 or a hemispherical shape as shown in FIG. Further, it may have another curved shape. The material of the quasi-insulator plate 208 is quartz,
A dielectric such as sapphire, glass, or a carbon compound, or silicon having a high resistivity can be used.

Further, as shown in FIG.
If the coiled antennas of the system are connected to different power supplies, the high frequencies applied to the inner antenna 111a and the outer antenna 111b may be inductively coupled and interfere with each other. In such a case, the frequency of the first power supply 113 connected to the inner antenna 111a and the second power supply 115 connected to the outer antenna 111b
If the frequencies are different, it is possible to prevent interference between the two high frequencies and effectively control the ICF distribution and the etching characteristics independently. This is the same in the etching apparatus having the configuration shown in FIGS.

[0040]

As described above, according to the present invention, a high frequency of a plurality of different frequencies is applied to the discharge mechanism for generating plasma, and the ICF distribution is greatly changed by the output of the second power supply. is there. In such a case, when the output of the second power supply is time-modulated, plasmas having different ICF distributions are repeatedly generated. Therefore, the ICF distribution averaged over a longer time than the time modulation period is an average of different ICF distributions. Further, when the waveform of the time modulation is changed, the ICF distribution changes. Therefore, the ICF distribution can be controlled, and plasma having the target ICF distribution can be generated.

When the main purpose of the second power supply is to control the dissociated active species in the plasma by the reaction on the antenna surface, if the discharge mechanism is made flat, the area where the plasma and the discharge mechanism come into contact with each other becomes large. This makes it easier to control the dissociation active species. Therefore, by time-modulating the output of the second power supply, it becomes easy to independently perform the ICF distribution and the dissociation active species in the plasma. In this case, if the frequencies of the first power supply and the second power supply are different, interference between the two high frequencies can be prevented.

When a plasma is generated by an electron cyclotron resonance system having a magnetic field generating mechanism, high-density plasma can be generated. Also, even if the rotation of electrons due to Lorentz force does not coincide with the period of the high frequency, the diffusion of plasma is suppressed by applying a magnetic field,
High-density plasma can be generated. However, when a magnetic field is applied, plasma diffusion is suppressed, so that it is difficult to obtain an ICF distribution that is close to uniform and has good controllability. In such a case, by time-modulating the output of the second power supply, high-density plasma with good controllability of the ICF distribution can be generated, and uniform plasma can also be generated.

If the frequency of the first high frequency applied to the discharge mechanism is 500 MHz or less, the wavelength of the electromagnetic wave at that frequency is 600 mm or more. The half wavelength at this time is 300 mm or more. The length of this half wavelength is from 200 mm to 30 mm in diameter.
Since the diameter is about the same as or longer than the diameter of a plasma processing apparatus for processing a wafer of 0 mm, the component of a higher-order electric field mode which causes a decrease in uniformity is reduced, and the uniformity is improved. By the way, when high-density plasma is generated at this frequency, an electromagnetic wave mainly passes through the ion sheath portion.
Therefore, the ICF distribution changes greatly depending on the output of the second high frequency. Therefore, the ICF distribution can be controlled in a wide range by time-modulating the second high-frequency output.

When the insulating film, particularly the oxide film, is uniformly etched, it is important to promote the chemical reaction on the antenna surface in order to control the dissociation active species in the plasma.
Therefore, it is desirable to make the antenna flat. Also,
Since high-density plasma is generated, it is desirable to apply a magnetic field to suppress plasma diffusion. Further, it is desirable to generate plasma by an electron cyclotron resonance method. When a large-diameter wafer having a diameter of 200 mm or more is processed, if a high frequency of 500 MHz or less, which has a wavelength equal to or longer than the diameter of the plasma processing chamber, is used, an electromagnetic wave mainly passes through the ion sheath portion. In such a case, when the output of the second power supply is time-modulated, it is possible to generate a high-density plasma in which the ICF distribution is substantially uniform, the ICF distribution is easily controlled, and the dissociated active species in the plasma can be controlled. it can.

Even when the discharge mechanism generates plasma by an inductive coupling method using two or more coiled antennas, the output is time-modulated with respect to at least one of a plurality of high frequencies applied to the discharge mechanism. As a result, both the dissociated active species and the ICF distribution in the plasma change, so that they can be controlled at once.

Further, if at least one of the plurality of high frequencies applied to the discharge mechanism is different from the other high frequencies, it is possible to prevent the plurality of high frequencies from interfering with each other. Control of distribution becomes easy.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of an ECR type plasma etching apparatus to which the present invention is applied.

FIG. 2 is a characteristic diagram showing an output waveform of a second power supply that is turned on and off.

FIG. 3 is a characteristic diagram showing an example of an ICF distribution.

FIG. 4 is a characteristic diagram showing an example of an ICF distribution.

FIG. 5 is a diagram showing a configuration example 1 of ICP plasma etching to which the present invention is applied.

FIG. 6 is a diagram showing a configuration example 2 of the ICP type plasma etching to which the present invention is applied.

FIG. 7 is a diagram showing a configuration example 3 of the ICP type plasma processing apparatus to which the present invention is applied.

[Description of References] 1, 101, 201: Plasma processing chamber, 2, 102, 2
02 ... Valve, 3,103,203 ... Exhaust device, 4,1
04, 204: wafer, 5, 105, 205: sample stage,
6, 106, 206 ... bias matching device, 7, 107,
207: power supply for bias, 8: shower plate, 9,
109,209 ... Mass flow controller, 10,1
10, 210 ... process gas, 11 ... antenna, 12,
112, 212... First matching devices, 13, 113, 213
... first power supply, 14, 114, 214 ... second matching device,
15, 115, 215: second power supply, 16: coil, 1
7 ... Yoke, 111a, 211a ... Inner antenna, 11
1b, 211b: outer antenna, 208: quasi-insulator plate.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05H 1/46 H01L 21/302 B (72) Inventor Kenji Maeda 502 Kandamachi, Tsuchiura-shi, Ibaraki Pref. 4K030 FA02 FA03 JA18 KA02 KA14 KA41 4K057 DA11 DA16 DB04 DB05 DB06 DB08 DB17 DB20 DD03 DD08 DG15 DM17 DM18 DM20 DM28 DM35 DM37 DN01 5F004 AA01 BA14 BA20 BB11 BB13 DA0 DA25 AB03A5E EH02 EH06 EH11 EH14 EH17 EH20

Claims (1)

[Claims] A plasma processing chamber having a sample stage on which a substrate to be processed is mounted and capable of evacuating the inside, and a plasma processing chamber having a predetermined flow rate therein. And a discharge mechanism for generating plasma, wherein the discharge mechanism is provided at a position facing the substrate to be processed, and applies a plurality of high frequencies to the discharge mechanism. In the plasma processing apparatus, at least one output of the high frequency is time-modulated.