JP2001320109A - Structure of magneto resistance(mr) element and its manufacturing method - Google Patents
Structure of magneto resistance(mr) element and its manufacturing methodInfo
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- JP2001320109A JP2001320109A JP2001051464A JP2001051464A JP2001320109A JP 2001320109 A JP2001320109 A JP 2001320109A JP 2001051464 A JP2001051464 A JP 2001051464A JP 2001051464 A JP2001051464 A JP 2001051464A JP 2001320109 A JP2001320109 A JP 2001320109A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】 本発明は，ＭＢＥ法（また
は、スパッター法、あるいは、その他の成膜方法）、リ
ソグラフィ法、強力な外部磁場の印加及び熱処理の組合
せにより、ひずみ付与層−ひずみ付与層間、すなわち、
相変態層、垂直磁化層、垂直磁化電極、または、クラス
タ層の厚さを、精密に制御して作成し、磁気媒体等の弱
い磁場を加えないときには、大きなトンネル抵抗値を持
つ状態であるが、磁気媒体等の弱い磁場が加わると、絶
縁体−金属相変態効果の発現により、電気抵抗値の大き
な低下を発生させる、相変態磁気抵抗（ＰＭＲ）素子形
態、あるいは、スピン依存トンネル磁気抵抗（ＴＭＲ）
素子形態、及び、それらの作製方法に関する。[0001] The present invention relates to a method for forming a strain-applying layer by applying a combination of an MBE method (or a sputtering method or another film forming method), a lithography method, a strong external magnetic field application and a heat treatment. That is,
When the thickness of the phase transformation layer, the perpendicular magnetization layer, the perpendicular magnetization electrode, or the cluster layer is precisely controlled and created, and a weak magnetic field such as a magnetic medium is not applied, the state has a large tunnel resistance. When a weak magnetic field such as a magnetic medium is applied, a large reduction in electric resistance occurs due to the manifestation of an insulator-metal phase transformation effect. A phase transformation magnetoresistance (PMR) element form or a spin-dependent tunneling magnetoresistance ( TMR)
The present invention relates to device configurations and manufacturing methods thereof.
【０００２】[0002]
【従来の技術】 従来は、Ｃｕ-Ｆｅ、Ｃｕ-Ｃｏ、Ａｇ
-ＣｏあるいはＡｇ-Ｆｅ等の組み合わせでモレキュラー
・ビーム・エピタキシ（ＭＢＥ）法により多層薄膜を作
成（例えば、M.N. Baibish et al., Phys. Rev. Lett.
61, 2472(1988)）したり、あるいは、イオン化クラスタ
・ビーム（ＩＣＢ）法により、Ｃｕ、あるいは、Ａｇの
マトリックス中に、ＦｅあるいはＣｏ等の強磁性クラス
タが埋め込まれた形態、または、酸化物絶縁体マトリッ
クス中に、ＦｅあるいはＣｏ等の強磁性クラスタが埋め
込まれた形態を、自然形成していた（例えば、J.I. Git
tleman et al., Phys. Rev. B5, 3609(1972)）。このよ
うな方法によっては、強磁性体と非磁性良導体の多層薄
膜界面における電子のスピン依存散乱の効果、強磁性体
のクラスタと非磁性良導体のマトリックスとの界面にお
ける電子のスピン依存散乱の効果、あるいは、非磁性絶
縁体マトリックス中の、強磁性体のクラスタ間のスピン
依存トンネル効果が、磁気抵抗（英語では、Magnetores
istance）効果の生成原因であった。また、強磁性体
（例えば、ＣｏあるいはＦｅ）と非磁性特性をもつ半導
体あるいは絶縁体（例えば、Ｇｅ、Ａｌ2Ｏ3）の薄膜を
交互に積層した素子は、トンネル磁気抵抗効果を発現す
ることが知られていた（例えば、S. Maekawa et al, IE
EE Trans. Magn. MAG-18, No.2, 707 (1982)）。Conventionally, Cu-Fe, Cu-Co, Ag
-Co or Ag-Fe etc. to create multilayer thin film by molecular beam epitaxy (MBE) method (for example, MN Baibish et al., Phys. Rev. Lett.
61, 2472 (1988)) or a form in which a ferromagnetic cluster such as Fe or Co is embedded in a Cu or Ag matrix by an ionized cluster beam (ICB) method, or an oxide. A form in which a ferromagnetic cluster such as Fe or Co was embedded in an insulator matrix was naturally formed (for example, JI Git
tleman et al., Phys. Rev. B5, 3609 (1972)). According to such a method, the effect of spin-dependent scattering of electrons at the interface between the ferromagnetic material and the nonmagnetic good conductor at the multilayer thin film, the effect of spin-dependent scattering of electrons at the interface between the ferromagnetic material cluster and the matrix of the nonmagnetic good conductor, Alternatively, spin-dependent tunneling between ferromagnetic clusters in a nonmagnetic insulator matrix can be attributed to magnetoresistance (Magnetores in English).
istance) was the cause of the effect. Also, an element in which thin films of a ferromagnetic material (eg, Co or Fe) and a semiconductor or an insulator (eg, Ge, Al 2 O 3 ) having non-magnetic properties are alternately stacked, exhibits a tunnel magnetoresistance effect. (Eg, S. Maekawa et al, IE
EE Trans. Magn. MAG-18, No. 2, 707 (1982)).
【０００３】このような磁気抵抗素子を用いて、読取り
用の磁気ヘッドを作製し、これに、常時電流を流して、
磁性媒体に近接して置くとき、磁性媒体の弱い磁場の変
化として記録された情報は、磁気ヘッドの電圧変化とし
て、読み出すことが可能となる。A magnetic head for reading is manufactured by using such a magnetoresistive element, and a current is constantly applied to the magnetic head for reading.
When placed close to the magnetic medium, information recorded as a change in the weak magnetic field of the magnetic medium can be read out as a change in voltage of the magnetic head.
【０００４】[0004]
【発明が解決しようとする課題】 従来の磁気抵抗効果
は、磁性体と良導体の異相界面における電子の散乱現
象、あるいは、強磁性体と絶縁体の積層薄膜におけるス
ピン依存トンネル効果の発現が、外部磁場によって変化
する効果を利用していたために、制御が困難で、抵抗変
化を大きくすることが出来ないという欠点があった。The conventional magnetoresistive effect is caused by the scattering phenomenon of electrons at a hetero-phase interface between a magnetic material and a good conductor, or the appearance of a spin-dependent tunneling effect in a laminated thin film of a ferromagnetic material and an insulator. Since the effect of changing by the magnetic field was used, there was a drawback that control was difficult and the resistance change could not be increased.
【０００５】本発明は、ひずみ付与層−ひずみ付与層間
の距離を、精密に制御することと、相変態層を組み込む
こと、あるいは、クラスタ層の厚さを、精密に制御する
ことにより、磁性媒体等の弱い磁場の存在下で、磁気誘
起相変態の効果、あるいは、スピン依存トンネル効果の
発現を、有用的に制御できる素子を製作すること、すな
わち、相変態磁気抵抗値、あるいは、スピン依存トンネ
ル磁気抵抗値の変化が大きい素子を作製することを目的
としている。[0005] The present invention provides a magnetic medium by precisely controlling the distance between strain applying layers and incorporating a phase transformation layer, or by precisely controlling the thickness of a cluster layer. To produce an element that can effectively control the effect of the magnetically induced phase transformation or the manifestation of the spin-dependent tunneling effect in the presence of a weak magnetic field, such as the phase transformation magnetoresistance or the spin-dependent tunneling It is intended to manufacture an element having a large change in magnetoresistance.
【０００６】[0006]
【課題を解決するための手段】 上記の目的を達成する
ために、本発明では、非磁性特性を持つ絶縁基板の上
に、第１、第２、第３及び第４ひずみ付与層、第１相変
態層、第１、第２垂直磁化電極、並びに、第１クラスタ
層を、ＭＢＥ法、リソグラフィ法、強力な外部磁場及び
熱処理を用いて作成することにより、最終的に、相変態
磁気抵抗値、あるいは、トンネル磁気抵抗値の増減を、
弱い磁場により制御できる形態の、相変態磁気抵抗（Ｐ
ＭＲ）単素子、スピン依存トンネル磁気抵抗（ＴＭＲ）
単素子を作製する。Means for Solving the Problems In order to achieve the above object, according to the present invention, a first, a second, a third, and a fourth strain imparting layer, a first By forming the phase transformation layer, the first and second perpendicularly magnetized electrodes, and the first cluster layer using the MBE method, the lithography method, a strong external magnetic field and a heat treatment, finally, the phase transformation magnetoresistance value is obtained. Or increase or decrease the tunnel magnetoresistance
Phase transformation magnetoresistance (P
MR) Single element, spin-dependent tunnel magnetoresistance (TMR)
A single element is manufactured.
【０００７】[0007]
【発明の実施の形態】 上記のように、第１に、ひずみ
付与層・ひずみ付与層間の距離、すなわち、相変態層の
厚さを精密に制御すること（請求項１、２、３、４及び
５）、第２に、ひずみ付与層の材料選択と厚さを精密に
制御すること（請求項１、２、３、４、５及び６）、あ
るいは、クラスタ層の厚さを精密に制御すること（請求
項６）が、相変態磁気抵抗値、あるいは、スピン依存ト
ンネル磁気抵抗値の増減を制御するために、それぞれ、
重要である。これにより、小さな外部磁場の変化を、大
きな電気抵抗変化に変換する、いわゆる相変態磁気抵抗
（ＰＭＲ）素子、あるいは、スピン依存トンネル磁気抵
抗（ＴＭＲ）素子を作製できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As described above, first, the distance between the strain applying layers and the strain applying layer, that is, the thickness of the phase transformation layer is precisely controlled (claims 1, 2, 3, and 4). And 5) secondly, precisely controlling the material selection and thickness of the strain applying layer (claims 1, 2, 3, 4, 5 and 6), or precisely controlling the thickness of the cluster layer. In order to control the increase or decrease of the phase transformation magnetoresistance or the spin-dependent tunnel magnetoresistance,
is important. Thus, a so-called phase-change magnetoresistance (PMR) element or a spin-dependent tunneling magnetoresistance (TMR) element that converts a small change in an external magnetic field into a large change in electric resistance can be manufactured.
【０００８】図１、図２、図３、図４、及び、図５に示
す構造において、磁気媒体等の弱い外部磁場が存在しな
いとき、第１相変態層は絶縁体（あるいは、半導体）で
あり、抵抗が高い状態である。弱い外部磁場が加わる
と、第１相変態層が、絶縁体−金属変態（あるいは、半
導体−金属変態）を起こすことにより、磁気誘起相変態
に基づく電気抵抗値の大きな低下が生じる。図６に示す
構造において、ＣｏあるいはＦｅ等のクラスタが、絶縁
体中に埋め込まれた形態のクラスタ層を挟んだ、第１及
び第２垂直磁化電極間に、一定の電流を流しておくと、
この回路は、弱い外部磁場の印加により、大きな電圧低
下を発生させる。In the structures shown in FIGS. 1, 2, 3, 4 and 5, when a weak external magnetic field such as a magnetic medium does not exist, the first phase transformation layer is made of an insulator (or a semiconductor). And high resistance. When a weak external magnetic field is applied, the first phase transformation layer undergoes an insulator-metal transformation (or a semiconductor-metal transformation), thereby causing a large decrease in electric resistance based on the magnetically induced phase transformation. In the structure shown in FIG. 6, when a constant current is passed between the first and second perpendicularly magnetized electrodes with the cluster layer in which the cluster of Co or Fe is embedded in the insulator interposed therebetween,
This circuit causes a large voltage drop when a weak external magnetic field is applied.
【０００９】相変態層を形成するＦ成分が、バルク状単
体で存在する場合には、相変態温度が、例えば、２００
Ｋ程度の低温であったとしても、薄膜にして、他の材料
（他の成分）で挟んで、大きな非等方的格子ひずみを加
えることにより、相変態温度を、２５０〜４００Ｋに変
化させることが可能である。その他、微量な元素（例え
ば、Ａｇ）を加えることにより、相変態温度を、変化さ
せることが可能である。このように、薄膜にすることの
効果に加えて、他の材料でサンドイッチにして、外部か
ら加えた非等方格子ひずみと、微量元素添加の単独ある
いは相乗効果により、相変態発現温度を変化させ、望み
の使用温度で、弱い外部磁場の印加により相変態を発現
させることができる。When the F component forming the phase transformation layer exists as a bulk single substance, the phase transformation temperature is, for example, 200
Even if the temperature is as low as K, change the phase transformation temperature to 250 to 400K by forming a thin film, sandwiching it with other materials (other components), and applying a large anisotropic lattice strain. Is possible. In addition, the phase transformation temperature can be changed by adding a trace element (for example, Ag). Thus, in addition to the effect of forming a thin film, the phase transformation onset temperature is changed by the anisotropic lattice strain applied from the outside and the addition of trace elements alone or in synergy by sandwiching with other materials. At a desired use temperature, a phase transformation can be developed by applying a weak external magnetic field.
【００１０】絶縁基板９１の厚さｔ０の上限及び下限
は、機械的強度が十分でしかも出来るだけ軽量になるよ
うに設定した。ＳｉＯ2の場合には、バルクに近い厚さ
のＳｉ上に、ＳｉＯ2及び他の絶縁薄膜、例えば、Ｚｎ
Ｏを積層して絶縁基板を構成する等、多層薄膜にするこ
とにより適切なひずみを付与できる構造とする。薄膜の
第１相変態層７１の厚さｔ１の下限は、金属あるいは化
合物の特性及び膜厚が均一になること、上限は、弱い外
部磁場Ｈの変化により、十分相変態が生じる厚さとし
た。第１及び第２ひずみ付与層６１及び６２の厚さｔ
２、並びに、第３及び第４ひずみ付与層６３及び６４の
厚さｔ４の下限は、相変態層にひずみを加えるに十分な
厚さであり、上限は、外部磁場Ｈの変化が、相変態層に
効果を及ぼしうる厚さとした。第１及び第２垂直磁化増
感層６及び７の厚さｔ３の下限は、垂直磁化が均一に生
じ得る厚さとし、上限は、外部磁場Ｈの効果が顕著に出
現する厚さとした。外形サイズのｗ１及びｗ２は、１０
０ＧＢ／ｉｎ2（ギガビット／平方インチ）以上の特性
を出現させるサイズである、０．０１μｍ≦ｗ１及びｗ
２≦０．３μｍとした。外形サイズｗ３は、電極の接続
回路の作成と関係するが、軽量である必要性から、小さ
いことが望ましい。The upper and lower limits of the thickness t0 of the insulating substrate 91 are set so that the mechanical strength is sufficient and the weight is as small as possible. In the case of SiO 2 is the thickness of the Si close to the bulk, SiO 2 and other insulating films, for example, Zn
A structure capable of imparting appropriate strain by forming a multilayer thin film, such as forming an insulating substrate by laminating Os. The lower limit of the thickness t1 of the first phase transformation layer 71 of the thin film is such that the properties and film thickness of the metal or compound are uniform, and the upper limit is a thickness at which sufficient phase transformation occurs due to a weak change in the external magnetic field H. Thickness t of first and second strain applying layers 61 and 62
The lower limit of the thickness t4 of the second and third and fourth strain applying layers 63 and 64 is a thickness sufficient to apply a strain to the phase transformation layer, and the upper limit is that the change of the external magnetic field H is caused by the phase transformation. The thickness was such that it could affect the layer. The lower limit of the thickness t3 of each of the first and second perpendicular magnetization sensitizing layers 6 and 7 is set to a thickness at which the perpendicular magnetization can uniformly occur, and the upper limit is set to a thickness at which the effect of the external magnetic field H appears remarkably. The external sizes w1 and w2 are 10
0.01 μm ≦ w1 and w, which are sizes that exhibit characteristics of 0 GB / in 2 (gigabit / square inch) or more
2 ≦ 0.3 μm. The outer size w3 is related to the formation of the electrode connection circuit, but is preferably small because it needs to be lightweight.
【００１１】[0011]
【実施例】 表１に、実施例番号、素子構造、Ａ、Ｂ、
Ｇ、Ｈ、Ｊ１、Ｊ２及びＫ成分の材料、並びに、結果を
示す。結果に記載されている、「良好」は２３３Ｋ〜３
８３Ｋで５〜１０％、「優良」は２３３Ｋ〜３８３Ｋで
１０〜２０％、及び、「最良」は２３３Ｋ〜３８３Ｋで
２０〜３０％の磁気抵抗変化率を表わす。Examples Table 1 shows Example numbers, element structures, A, B,
The materials of G, H, J1, J2 and K components and the results are shown. "Good" described in the results is 233K to 3
"Excellent" represents 10 to 20% at 233K to 383K, and "best" represents 20 to 30% at 233K to 383K.
【００１２】[0012]
【表１】 [Table 1]
【００１３】[0013]
【発明の効果】本発明は，以上に説明したように、電極
の働きをするひずみ付与層の厚さ、ひずみ付与層・ひず
み付与層間の距離、すなわち、相変態層の厚さ、及び、
クラスタ層の厚さを、精密に制御して磁気抵抗素子を作
製したので、磁気媒体に相当する極めて小さな磁場をか
けることにより、磁気誘起相変態あるいは、トンネル現
象を容易に生じさせ、磁気誘起相変態効果、あるいは、
スピン依存トンネル効果を原理とする大きな抵抗減少を
観測した。As described above, according to the present invention, the thickness of the strain applying layer acting as an electrode, the distance between the strain applying layers and the strain applying layers, that is, the thickness of the phase transformation layer, and
Since the thickness of the cluster layer was precisely controlled to fabricate the magnetoresistive element, a very small magnetic field corresponding to the magnetic medium was applied to easily cause magnetically induced phase transformation or tunnel phenomenon, and the magnetically induced phase Pervert effect, or
A large resistance decrease based on the spin-dependent tunneling effect was observed.
【図１】第１及び第２ひずみ付与層の間に第１相変態層
を有する、相変態磁気抵抗素子構造を示す。（ａ）は平
面図、（ｂ）は正面図、及び、（ｃ）側面図である。外
部磁場は、側面図の右から左方向へ、加えるように設定
する。FIG. 1 shows a phase transformation magnetoresistive element structure having a first phase transformation layer between first and second strain applying layers. (A) is a plan view, (b) is a front view, and (c) is a side view. The external magnetic field is set so as to be applied from right to left in the side view.
【図２】絶縁基板及び第１ひずみ付与層の間に、第１相
変態層を、並びに、第１ひずみ付与層及び第２ひずみ付
与層の間に第１垂直磁化増感層を、それぞれ有する、相
変態磁気抵抗素子構造を示す。（ａ）は平面図、（ｂ）
は正面図、及び、（ｃ）側面図である。外部磁場は、側
面図の右から左方向へ、加えるように設定する。FIG. 2 has a first phase transformation layer between the insulating substrate and the first strain imparting layer, and a first perpendicular magnetization sensitizing layer between the first strain imparting layer and the second strain imparting layer. Shows a phase transformation magnetoresistive element structure. (A) is a plan view, (b)
3 is a front view and (c) a side view. The external magnetic field is set so as to be applied from right to left in the side view.
【図３】第１及び第２ひずみ付与層の間に第１相変態層
を有し、第３及び第４ひずみ付与層の間に、垂直磁化増
感層を有する、相変態磁気抵抗素子構造を示す。（ａ）
は平面図、（ｂ）は正面図、及び、（ｃ）側面図であ
る。外部磁場は、側面図の右から左方向へ、加えるよう
に設定する。FIG. 3 shows a phase transformation magnetoresistive element structure having a first phase transformation layer between first and second strain applying layers and a perpendicular magnetization sensitizing layer between third and fourth strain applying layers. Is shown. (A)
Is a plan view, (b) is a front view, and (c) is a side view. The external magnetic field is set so as to be applied from right to left in the side view.
【図４】第１及び第２ひずみ付与層、並びに、第２及び
第３ひずみ付与層の間に第１相変態層、並びに、第１垂
直磁化増感層をそれぞれ有する、相変態磁気抵抗素子構
造を示す。（ａ）は平面図、（ｂ）は正面図、及び、
（ｃ）側面図である。外部磁場は、側面図の右から左方
向へ、加えるように設定する。電流は、第１ひずみ付与
層と第２ひずみ付与層との間に流す。FIG. 4 is a phase transformation magnetoresistive element having a first and second strain applying layers, and a first phase transformation layer and a first perpendicular magnetization sensitizing layer between the second and third strain applying layers, respectively. The structure is shown. (A) is a plan view, (b) is a front view, and
(C) It is a side view. The external magnetic field is set so as to be applied from right to left in the side view. An electric current flows between the first strain applying layer and the second strain applying layer.
【図５】第１及び第２ひずみ付与層、並びに、第３及び
第４ひずみ付与層の間に第１相変態層、並びに、第１垂
直磁化増感層をそれぞれ有する、相変態磁気抵抗素子構
造を示す。（ａ）は平面図、（ｂ）は正面図、及び、
（ｃ）側面図である。外部磁場は、側面図の右から左方
向へ、加えるように設定する。電流は、第１ひずみ付与
層と第２ひずみ付与層との間に流す。FIG. 5 is a phase transformation magnetoresistive element having a first phase transformation layer and a first perpendicular magnetization sensitizing layer between the first and second strain imparting layers and the third and fourth strain imparting layers, respectively. The structure is shown. (A) is a plan view, (b) is a front view, and
(C) It is a side view. The external magnetic field is set so as to be applied from right to left in the side view. An electric current flows between the first strain applying layer and the second strain applying layer.
【図６】第１及び第２ひずみ付与層の間に第１垂直磁化
増感層を有し、及び、第３及び第４ひずみ付与層の間に
第２垂直磁化増感層を有し、並びに、第２及び第３ひず
み付与層の間に、第１クラスタ層をそれぞれ有する、相
変態磁気抵抗素子構造を示す。（ａ）は平面図、（ｂ）
は正面図、及び、（ｃ）側面図である。外部磁場は、側
面図の右から左方向へ、加えるように設定する。電流
は、第２ひずみ付与層と第３ひずみ付与層との間に流
す。FIG. 6 has a first perpendicular magnetization sensitizing layer between the first and second strain applying layers, and has a second perpendicular magnetization sensitizing layer between the third and fourth strain applying layers; Also, a phase transformation magnetoresistive element structure having a first cluster layer between the second and third strain applying layers is shown. (A) is a plan view, (b)
3 is a front view and (c) a side view. The external magnetic field is set so as to be applied from right to left in the side view. An electric current flows between the second strain applying layer and the third strain applying layer.
【符号の説明】 ３１：第１垂直磁化増感層 ３２：第２垂直磁化増感層 ６１：第１ひずみ付与層 ６２：第２ひずみ付与層 ６３：第３ひずみ付与層 ６４：第４ひずみ付与層 ７１：第１相変態層 ８１：第１電極 ８２：第２電極 ９１：絶縁基板 １１１：第１クラスタ層[Description of Signs] 31: First perpendicular magnetization sensitizing layer 32: Second perpendicular magnetization sensitizing layer 61: First strain applying layer 62: Second strain applying layer 63: Third strain applying layer 64: Fourth strain applying Layer 71: First phase transformation layer 81: First electrode 82: Second electrode 91: Insulating substrate 111: First cluster layer
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｆ 41/18 Ｈ０１Ｌ 43/12 Ｈ０１Ｌ 43/12 Ｇ０１Ｒ 33/06 Ｒ Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) H01F 41/18 H01L 43/12 H01L 43/12 G01R 33/06 R
Claims (7)
分；厚さｔ０；０．１ｍｍ≦ｔ０≦１ｍｍ）の上に、第
１ひずみ付与層６１（Ｊ１成分）、同一水準で、第１相
変態層７１（Ｈ成分）、第１電極８１（Ｇ成分）、及
び、第２電極８２（Ｇ成分）、並びに、それらの上の最
上層に第２ひずみ付与層６２（Ｊ１成分）を設けた、積
層構造を持ち、第１及び第２ひずみ付与層間の第１相変
態層の厚さｔ１（０．８ｎｍ≦ｔ１≦１０ｎｍ）は、磁
気媒体等の弱い磁場が存在しないときは、大きい電気抵
抗値をもち、弱い外部磁場の作用により、絶縁体→金属
あるいは半導体→金属の相変態が生じ、電気抵抗値の大
きな低下が生じる厚さであり、第１及び第２ひずみ付与
層は、第１相変態層に、素子の使用温度付近で、適切な
ひずみを付与できる厚さｔ２（１ｎｍ≦ｔ２≦１００ｎ
ｍ）の、請求項７に記載した、金属及び合金であり、モ
レキュラー・ビーム・エピタキシ（Molecular-Beam Epi
taxy :ＭＢＥ）法（または、スパッター法、あるいは、
その他の成膜方法）、リソグラフィ法、強力な外部磁場
の印加及び熱処理により作製することを特徴とする、磁
気誘起相変態効果の原理に基づく、相変態磁気抵抗（ph
ase transformation magneto-resistance:ＰＭＲ）素子
の形態及びその作製方法。As shown in FIG. 1, a first strain imparting layer 61 (J1 component) is provided on an insulating substrate 91 (component B; thickness t0; 0.1 mm ≦ t0 ≦ 1 mm) at the same level. The first phase transformation layer 71 (H component), the first electrode 81 (G component), the second electrode 82 (G component), and the second strain imparting layer 62 (J1 component) on the uppermost layer thereon. The thickness t1 (0.8 nm ≦ t1 ≦ 10 nm) of the first phase transformation layer between the first and second strain imparting layers is provided when there is no weak magnetic field such as a magnetic medium. It has a large electric resistance value, and is a thickness at which a phase transformation from an insulator to a metal or a semiconductor to a metal occurs due to the action of a weak external magnetic field and a large decrease in electric resistance occurs. , A thickness capable of imparting an appropriate strain to the first phase transformation layer near the operating temperature of the device. T2 (1 nm ≦ t2 ≦ 100 n
m) the metal and alloy according to claim 7, wherein the metal and alloy are molecular-beam epitaxy.
taxy: MBE) method (or sputter method, or
Phase transformation magnetoresistance (ph) based on the principle of the magnetically induced phase transformation effect, which is characterized by being manufactured by lithography, application of a strong external magnetic field and heat treatment.
Form of ase transformation magneto-resistance (PMR) element and manufacturing method thereof.
分；厚さｔ０；０．１ｍｍ≦ｔ０≦１ｍｍ）の上に、同
一水準で、第１相変態層７１（Ｈ成分）、第１電極８１
（Ｇ成分）、及び、第２電極８２（Ｇ成分）、それらの
上に、第１ひずみ付与層６１（Ｊ１成分）、第１垂直磁
化増感層３１（Ａ成分）、並びに、最上層に第２ひずみ
付与層６２（Ｊ２成分）を設けた、積層構造を持ち、絶
縁基板及び第１ひずみ付与層間の第１相変態層の厚さ
（ｔ１；０．８ｎｍ≦ｔ１≦１０ｎｍ）は、磁気媒体等
の弱い磁場が存在しないとき、トンネル現象により大き
い電気抵抗値をもち、外部磁場が存在するときは、弱い
磁場の作用により、絶縁体→金属あるいは半導体→金属
の相変態が生じ、電気抵抗値の大きな低下が発現する厚
さであり、絶縁基板、並びに、第１、及び、第２ひずみ
付与層（それぞれ厚さｔ２及びｔ４；１ｎｍ≦ｔ２及び
ｔ４≦１００ｎｍ）は、第１相変態層及び第１垂直磁化
増感層（厚さｔ３；１ｎｍ≦ｔ３≦１００ｎｍ）に、素
子の使用温度付近で、適切なひずみを付与できる、請求
項７に記載した、金属及び合金であり、ＭＢＥ法（また
は、スパッター法、あるいは、その他の成膜方法）、リ
ソグラフィ法、強力な外部磁場の印加及び熱処理により
作製することを特徴とする、磁気誘起相変態効果の原理
に基づく、相変態磁気抵抗（ＰＭＲ）素子の形態及び作
製方法。2. As shown in FIG. 2, on an insulating substrate 91 (B component; thickness t0; 0.1 mm ≦ t0 ≦ 1 mm), at the same level, a first phase transformation layer 71 (H component), First electrode 81
(The G component), the second electrode 82 (the G component), the first strain imparting layer 61 (the J1 component), the first perpendicular magnetization sensitizing layer 31 (the A component), and the uppermost layer. The second strain imparting layer 62 (J2 component) has a laminated structure, and the thickness (t1; 0.8 nm ≦ t1 ≦ 10 nm) of the first phase transformation layer between the insulating substrate and the first strain imparting layer is magnetic. When a weak magnetic field such as a medium does not exist, the tunneling phenomenon has a larger electric resistance value.When an external magnetic field exists, a weak magnetic field causes a phase transformation from an insulator to a metal or a semiconductor to a metal, thereby causing an electric resistance. The insulating substrate and the first and second strain imparting layers (thicknesses t2 and t4; 1 nm ≦ t2 and t4 ≦ 100 nm, respectively) are the first phase transformation layer. And a first perpendicular magnetization sensitizing layer (thickness t3; The metal and the alloy according to claim 7, wherein the metal and the alloy can be appropriately strained at about nm ≦ t3 ≦ 100 nm near the operating temperature of the element. ), A morphology and a manufacturing method of a phase transformation magnetoresistive (PMR) element based on the principle of a magnetically induced phase transformation effect, characterized by being produced by a lithography method, application of a strong external magnetic field and heat treatment.
分；厚さｔ０；０．１ｍｍ≦ｔ０≦１ｍｍ）の上に、第
１ひずみ付与層６１（Ｊ１成分）、同一水準で第１相変
態層７１（Ｈ成分）、第１電極８１（Ｇ成分）、及び、
第２電極８２（Ｇ成分）、それらの上に、第２ひずみ付
与層６２（Ｊ１成分）、第３ひずみ付与層６３（Ｊ２成
分）、第１垂直磁化増感層３１（Ａ成分）、並びに、最
上層に第４ひずみ付与層６４（Ｊ２成分）を設けた、積
層構造を持ち、第１相変態層の厚さ（ｔ１；０．８ｎｍ
≦ｔ１≦１０ｎｍ）は、磁気媒体等の弱い磁場が存在し
ないときは、第１相変態層が、絶縁体であるために、大
きい電気抵抗値をもつが、弱い外部磁場が作用すると、
絶縁体→金属の相変態が生じ、電気抵抗値が大きく低下
する厚さであり、第１及び第２ひずみ付与層（厚さｔ
２；１ｎｍ≦ｔ２≦１００ｎｍ）は、第１相変態層に、
素子の使用温度付近で、適切なひずみを付与して、変態
温度を調整し、第３及び第４ひずみ付与層（厚さｔ４；
１ｎｍ≦ｔ４≦１００ｎｍ）は、第１垂直磁化増感層
（厚さｔ３；１ｎｍ≦ｔ３≦１００ｎｍ）に垂直磁化を
生じるひずみを付与する、請求項７に記載した、金属及
び合金であり、ＭＢＥ法（または、スパッター法、ある
いは、その他の成膜方法）、リソグラフィ法、強力な外
部磁場の印加及び熱処理により作製することを特徴とす
る、磁気誘起相変態効果の原理に基づく、相変態磁気抵
抗（ＰＭＲ）素子の形態及びその作製方法。3. As shown in FIG. 3, on an insulating substrate 91 (B component; thickness t0; 0.1 mm ≦ t0 ≦ 1 mm), a first strain imparting layer 61 (J1 component) is formed at the same level. A one-phase transformation layer 71 (H component), a first electrode 81 (G component), and
The second electrode 82 (G component), the second strain applying layer 62 (J1 component), the third strain applying layer 63 (J2 component), the first perpendicular magnetization sensitizing layer 31 (A component), and , Having a laminated structure in which a fourth strain imparting layer 64 (J2 component) is provided on the uppermost layer, and having a thickness (t1; 0.8 nm) of the first phase transformation layer.
≦ t1 ≦ 10 nm), when a weak magnetic field such as a magnetic medium does not exist, the first phase transformation layer has a large electric resistance value because it is an insulator, but when a weak external magnetic field acts,
It is a thickness at which the phase transformation from the insulator to the metal occurs and the electric resistance value is greatly reduced, and the first and second strain applying layers (thickness t)
2; 1 nm ≦ t2 ≦ 100 nm), the first phase transformation layer
Near the operating temperature of the element, an appropriate strain is applied to adjust the transformation temperature, and the third and fourth strain applying layers (thickness t4;
8. The metal and alloy according to claim 7, wherein the first perpendicular magnetization sensitizing layer (thickness t3; 1 nm≤t3≤100 nm) imparts a strain that causes perpendicular magnetization to the first perpendicular magnetization sensitizing layer (1 nm≤t4≤100 nm). Phase transformation magnetoresistance based on the principle of the magnetically induced phase transformation effect, characterized by being produced by a method (or sputtering method or other film forming method), lithography method, application of a strong external magnetic field and heat treatment. (PMR) Form of element and manufacturing method thereof.
分；厚さｔ０；０．１ｍｍ≦ｔ０≦１ｍｍ）の上に、正
電極である第１ひずみ付与層６１（Ｊ１成分）、第１相
変態層７１（Ｈ成分）、負電極である第２ひずみ付与層
６２（Ｊ１成分）、第１垂直磁化増感層３１（Ａ成
分）、及び、最上層に第３ひずみ付与層６３（Ｊ２成
分）を設けた、積層構造を持ち、第１相変態層７１の厚
さ（ｔ１；０．８ｎｍ≦ｔ１≦１０ｎｍ）は、磁気媒体
等の弱い磁場が存在しないときは、第１相変態層が、絶
縁体であるために、トンネル抵抗による大きい電気抵抗
値をもつが、弱い外部磁場が作用すると、絶縁体→金属
の相変態が生じ、電気抵抗値が大きく低下する厚さであ
り、第１、第２及び第３ひずみ付与層（それぞれの厚さ
ｔ２、ｔ４及びｔ５；１ｎｍ≦ｔ２、ｔ４及びｔ５≦１
００ｎｍ）は、第１相変態層及び第１垂直磁化電極（厚
さｔ３；１ｎｍ≦ｔ３≦１００ｎｍ）に、素子の使用温
度付近で、適切なひずみを付与できる、請求項７に記載
した、金属及び合金であり、ＭＢＥ法、リソグラフィ
法、強力な外部磁場の印加及び熱処理により作製するこ
とを特徴とする、磁気誘起相変態効果の原理に基づく、
相変態磁気抵抗（ＰＭＲ）素子の形態及びその作製方
法。4. As shown in FIG. 4, a first strain imparting layer 61 (J1 component) as a positive electrode is provided on an insulating substrate 91 (B component; thickness t0; 0.1 mm ≦ t0 ≦ 1 mm). The first phase transformation layer 71 (H component), the second strain imparting layer 62 (J1 component) as a negative electrode, the first perpendicular magnetization sensitizing layer 31 (A component), and the third strain imparting layer 63 on the uppermost layer (J2 component), the first phase transformation layer 71 has a laminated structure, and the thickness (t1; 0.8 nm ≦ t1 ≦ 10 nm) of the first phase transformation layer 71 is the first phase transformation layer when a weak magnetic field such as a magnetic medium does not exist. Since the transformation layer is an insulator, it has a large electric resistance value due to tunnel resistance, but when a weak external magnetic field acts, a phase transformation from insulator to metal occurs, and the electric resistance value is greatly reduced. , First, second and third strain imparting layers (thicknesses t2, t4 and t5; 1n m ≦ t2, t4 and t5 ≦ 1
The metal according to claim 7, which is capable of imparting an appropriate strain to the first phase transformation layer and the first perpendicular magnetization electrode (thickness t3; 1 nm ≦ t3 ≦ 100 nm) near the operating temperature of the element. Based on the principle of the magnetically induced phase transformation effect, characterized by being produced by MBE, lithography, application of a strong external magnetic field and heat treatment.
A form of a phase transformation magnetoresistive (PMR) element and a manufacturing method thereof.
分；厚さｔ０；０．１ｍｍ≦ｔ０≦１ｍｍ）の上に、正
電極である第１ひずみ付与層６１（Ｊ１成分）、第１相
変態層７１（Ｈ成分）、負電極である第２ひずみ付与層
６２（Ｊ１成分）、第３ひずみ付与層６３（Ｊ２成
分）、第１垂直磁化増感層３１（Ａ成分；厚さｔ３；１
ｎｍ≦ｔ３≦１００ｎｍ）、及び、最上層に第４ひずみ
付与層６４（Ｊ２成分）を設けた、積層構造を持ち、第
１相変態層７１の厚さ（ｔ１；０．８ｎｍ≦ｔ１≦１０
ｎｍ）は、磁気媒体等の弱い磁場が存在しないときは、
第１相変態層が、絶縁体であるために、トンネル抵抗に
よる大きい電気抵抗値をもつが、弱い外部磁場が作用す
ると、絶縁体→金属の相変態が生じ、電気抵抗値が大き
く低下する厚さであり、第１及び第２（厚さｔ２；１ｎ
ｍ≦ｔ２≦１００ｎｍ）、並びに、第３及び第４ひずみ
付与層（厚さｔ４；１ｎｍ≦ｔ４≦１００ｎｍ）は、第
１相変態層及び第１垂直磁化電極に、素子の使用温度付
近で、適切なひずみを付与できる、請求項７に記載し
た、金属及び合金であり、ＭＢＥ法、リソグラフィ法、
強力な外部磁場の印加及び熱処理により作製することを
特徴とする、磁気誘起相変態効果の原理に基づく、相変
態磁気抵抗（ＰＭＲ）素子の形態及びその作製方法。5. As shown in FIG. 5, a first strain imparting layer 61 (J1 component) as a positive electrode is provided on an insulating substrate 91 (B component; thickness t0; 0.1 mm ≦ t0 ≦ 1 mm). First phase transformation layer 71 (H component), second strain imparting layer 62 (J1 component) as a negative electrode, third strain imparting layer 63 (J2 component), first perpendicular magnetization sensitizing layer 31 (A component; thickness) T3; 1
nm ≦ t3 ≦ 100 nm) and a layered structure in which a fourth strain imparting layer 64 (J2 component) is provided on the uppermost layer, and the thickness (t1; 0.8 nm ≦ t1 ≦ 10) of the first phase transformation layer 71
nm), when there is no weak magnetic field such as a magnetic medium,
Since the first phase transformation layer is an insulator, the first phase transformation layer has a large electric resistance value due to tunnel resistance. However, when a weak external magnetic field acts, a phase transformation from an insulator to a metal occurs, and the electric resistance value is greatly reduced. And the first and second (thickness t2; 1n
m ≦ t2 ≦ 100 nm) and the third and fourth strain imparting layers (thickness t4; 1 nm ≦ t4 ≦ 100 nm) are provided on the first phase transformation layer and the first perpendicular magnetization electrode at around the operating temperature of the element. The metal and the alloy according to claim 7, which can impart an appropriate strain, wherein the metal and the alloy are an MBE method, a lithography method,
A form of a phase transformation magnetoresistive (PMR) element based on the principle of a magnetically induced phase transformation effect, which is produced by applying a strong external magnetic field and heat treatment, and a method for producing the same.
分；厚さｔ０；０．１ｍｍ≦ｔ０≦１ｍｍ）の上に、第
１ひずみ付与層６１（Ｊ２成分）、第１垂直磁化増感層
３１（Ａ成分；厚さｔ１；１ｎｍ≦ｔ１≦１００ｎ
ｍ）、正電極である第２ひずみ付与層６２（Ｊ２成
分）、その上に、酸素、あるいは、空気雰囲気中で、第
１クラスタ層１１１（Ｋ成分；厚さｔ５；０．５ｎｍ≦
ｔ５≦１００ｎｍ）を形成し（この場合、金属あるいは
合金クラスタは、絶縁酸化膜中に、容易にトンネル効果
が発現する距離で自然形成される）、その上に、負電極
である第３ひずみ付与層６３（Ｊ２成分）、第２垂直磁
化増感層３２（Ａ成分；厚さｔ３；１ｎｍ≦ｔ３≦１０
０ｎｍ）、及び、最上層に第４ひずみ付与層６４（Ｊ２
成分）を形成し、第１及び第２（厚さｔ２；１ｎｍ≦ｔ
２≦１００ｎｍ）、並びに、第３及び第４ひずみ付与層
（厚さｔ４；１ｎｍ≦ｔ４≦１００ｎｍ）は、第１垂直
磁化増感層及び第２垂直磁化増感層に、素子の使用温度
付近で、適切なひずみを付与して、垂直磁化を生じる構
造であり、請求項７に記載された各成分からなり、ＭＢ
Ｅ法（または、スパッター法、あるいは、その他の成膜
方法）、リソグラフィ法、強力な外部磁場の印加及び熱
処理により作製することを特徴とする、スピン依存トン
ネル効果の原理に基づく、トンネル磁気抵抗（ＴＭＲ）
素子の形態及びその作製方法。6. As shown in FIG. 6, on an insulating substrate 91 (B component; thickness t0; 0.1 mm ≦ t0 ≦ 1 mm), a first strain imparting layer 61 (J2 component) and a first perpendicular magnetization Sensitizing layer 31 (A component; thickness t1; 1 nm ≦ t1 ≦ 100 n
m), the second strain imparting layer 62 (J2 component) as a positive electrode, and the first cluster layer 111 (K component; thickness t5; 0.5 nm ≦ 0.5 nm) thereon in an oxygen or air atmosphere.
t5 ≦ 100 nm) (in this case, the metal or alloy cluster is naturally formed in the insulating oxide film at a distance where the tunnel effect easily appears), and a third strain, which is a negative electrode, is provided thereon. Layer 63 (J2 component), second perpendicular magnetization sensitizing layer 32 (A component; thickness t3; 1 nm ≦ t3 ≦ 10
0 nm) and a fourth strain applying layer 64 (J2
A first component and a second component (thickness t2; 1 nm ≦ t)
2 ≦ 100 nm) and the third and fourth strain imparting layers (thickness t4; 1 nm ≦ t4 ≦ 100 nm) are provided on the first and second perpendicular magnetization sensitizing layers near the device operating temperature. And a structure in which an appropriate strain is applied to generate perpendicular magnetization.
Tunneling magnetoresistance (based on the principle of spin-dependent tunneling, characterized by being produced by E method (or sputtering method or other film forming method), lithography method, application of strong external magnetic field and heat treatment, TMR)
Element forms and manufacturing methods thereof.
直磁化増感層３２を構成する、分極率の大きいＡ成分と
して、Ｆｅ、Ｃｏ等の強磁性特性を持つ金属、及び、Ｃ
ｏＣｒ、ＣｏＰｔ、ＮｉＦｅ、ＣｏＦｅ、ＮｉＦｅＣｏ
等の強磁性合金を使用し、絶縁基板９１を構成するＢ成
分として、非磁性特性を持つアルミナ（Ａｌ2Ｏ3）及び
ＳｉＯ2等、並びに、ペロブスカイト（perovskite）構
造を持つ、ＬａＡｌＯ3、ＮｄＧａＯ3及びＳｒＴＯ3を
それぞれ使用し、第１、第２電極８１、８２を構成する
Ｇ成分として、Ｃｕ、Ａｌ、Ｐｔ、Ｐｄ、Ａｕ、あるい
は、良導体非磁性金属または合金を使用し、第１相変態
層７１構成するＨ成分として、Ｌ1-xＱxＭｎＯ3 、０≦
ｘ≦１、（ここで、Ｌは、Ｇｄ、Ｌａ、Ｎｄ及びＰｒ等
の希土類金属、Ｌサイトを置換するＱとして、Ｃａ、Ｓ
ｒ及びＢａ等がある）と表記する、ペロブスカイト（pe
rovskite）構造を持つ、マンガナイト、並びに、半金属
であるＢｉ及びその合金、ＳｍＮｉＯ3、ＰｒＮｉＯ3等
のニッケル基酸化物を使用し、第１及び第２、並びに、
第３及び第４ひずみ付与層６１、６２、６３、６４を構
成するＪ１並びにＪ２成分として、非磁性体、良導体で
あるＣｕ、Ａｌ、Ｐｔ、Ｐｄ、その他の金属及び合金、
ド−プした半導体、並びに、Ｌ1-xＱxＭｎＯ3 、0≦x≦
1、（ここで、Ｌは、Ｇｄ、Ｌａ、Ｎｄ及びＰｒ等の希
土類金属、Ｌサイトを置換するＱとして、Ｃａ、Ｓｒ及
びＢａ等がある）と表記する、ペロブスカイト構造を持
つ、ＬａＡｌＯ3、ＮｄＧａＯ3及びＳｒＴＯ3、及び、
マンガナイト、並びに、半金属であるＢｉ及びその合
金、ＳmＮｉＯ3、ＰｒＮｉＯ3等のニッケル基酸化物を
使用し、強磁性体のクラスタを含む第１クラスタ層を構
成する、Ｋ成分として、Ｃｏ−Ａｌ−Ｏ、Ｎｉ−Ｓｉ−
Ｏ、Ｃｏ−Ｓｉ−Ｏ、Ｆｅ−Ｍｇ−Ｏ、Ｆｅ−Ｈｆ−Ｏ
（以上は、酸素あるいは空気雰囲気中で、Ｃｏ−Ａｌ、
Ｎｉ−Ｓｉ、Ｃｏ−Ｓｉ、Ｆｅ−Ｍｇ、Ｆｅ−Ｈｆ合金
を、ＭＢＥ法、スパッター法あるいはその他の方法で成
膜する）、及び、Ｆｅ−Ｍｇ−Ｆ系合金を使用すること
を特徴とし、磁気誘起相変態効果、または、スピン依存
トンネル効果を原理とする、請求項７以外の、前記各請
求項１、２、３、４、５、及び、６に記載したＰＭＲ素
子及びＴＭＲ素子形態並びに作製方法。7. A metal having ferromagnetic properties, such as Fe or Co, as an A component having a large polarizability, constituting the first perpendicular magnetization sensitizing layer 31 and the second perpendicular magnetization sensitizing layer 32; C
oCr, CoPt, NiFe, CoFe, NiFeCo
Alumina (Al 2 O 3 ) and SiO 2 having non-magnetic properties, and LaAlO 3 , NdGaO having a perovskite structure are used as a B component constituting the insulating substrate 91 using a ferromagnetic alloy such as 3 and SrTO 3 , respectively, and Cu, Al, Pt, Pd, Au, or a good conductor non-magnetic metal or alloy as a G component constituting the first and second electrodes 81 and 82, and a first phase As the H component constituting the transformation layer 71, L 1-x Q x MnO 3 , 0 ≦
x ≦ 1, (where L is a rare earth metal such as Gd, La, Nd and Pr, and Q which substitutes for the L site is Ca, S
r, Ba, etc.), perovskite (pe
rovskite) structure, using a nickel-based oxide such as Bi and its alloys, SmNiO 3 , PrNiO 3, which are semimetals,
As the J1 and J2 components constituting the third and fourth strain applying layers 61, 62, 63, 64, non-magnetic materials, good conductors such as Cu, Al, Pt, Pd, other metals and alloys,
Doped semiconductor, and L 1-x Q x MnO 3 , 0 ≦ x ≦
LaAlO 3 having a perovskite structure, denoted as 1, (where L is a rare earth metal such as Gd, La, Nd, and Pr, and Q as a Q replacing the L site is Ca, Sr, and Ba). NdGaO 3 and SrTO 3 , and
Manganite and a semi-metal Bi and its alloys, nickel-based oxides such as SmNiO 3 and PrNiO 3 , and a first cluster layer containing a ferromagnetic cluster are used. Al-O, Ni-Si-
O, Co-Si-O, Fe-Mg-O, Fe-Hf-O
(The above are Co-Al,
Ni-Si, Co-Si, Fe-Mg, and Fe-Hf alloys are formed by MBE, sputtering, or other methods), and Fe-Mg-F alloys are used. The PMR element and the TMR element form according to each of claims 1, 2, 3, 4, 5, and 6, other than claim 7, which is based on a magnetically induced phase transformation effect or a spin-dependent tunnel effect. Production method.
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| KR101338360B1 (en) * | 2012-04-04 | 2013-12-06 | 광주과학기술원 | Selection device and nonvolatile memory cell including the same and method of fabricating the same |
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| KR101338360B1 (en) * | 2012-04-04 | 2013-12-06 | 광주과학기술원 | Selection device and nonvolatile memory cell including the same and method of fabricating the same |
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