JP2001320088A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device in which image quality is prevented from deteriorating due to light reflected toward an individual electrode while reducing the chip size by not forming an individual electrode between light emitting diodes. SOLUTION: A plurality of one conductivity type semiconductor layers and opposite conductivity type semiconductor layers are provided on a substrate, the one conductivity type semiconductor layer is connected with common electrodes, the opposite conductivity type semiconductor layer is arranged with a plurality of light emitting diodes connected with individual electrodes, the light emitting diodes are divided into groups of a plurality of diodes, each group is connected with the same individual electrode, the opposite conductivity type semiconductor layers belonging to different groups are connected with the same common electrode, and the common electrodes belonging to different groups are interconnected through an insulation film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device used as an exposure light source of a photosensitive drum for a page printer.

[0002]

2. Description of the Related Art A conventional semiconductor light emitting device is shown in FIGS. FIG. 5 is a sectional view, and FIG. 6 is a plan view.

In FIG. 5, 21 is a semiconductor substrate, 22 is a semiconductor layer of one conductivity type, 23 is a semiconductor layer of opposite conductivity type, 24 is an individual electrode, and 25 is a common electrode.

The one-conductivity-type semiconductor layer 22 includes a buffer layer 22.
a, ohmic contact layer 22b, electron injection layer 22c
It consists of.

[0005] The opposite conductivity type semiconductor layer 23 comprises a light emitting layer 23a,
It is composed of a cladding layer 23b and a second ohmic contact layer 23c.

A semiconductor layer 22 of one conductivity type is formed on a semiconductor substrate 21.
When providing a light emitting diode composed of the semiconductor layer 23 and the opposite conductivity type semiconductor layer 23, the semiconductor layer 23 having the opposite conductivity type has a smaller area than the semiconductor layer 22 of the one conductivity type. 25 (25a, 25b) are connected, and the individual electrodes 24 are connected to the opposite conductivity type semiconductor layer 23. Reference numeral 26 denotes a protective film made of a silicon nitride film or the like.

[0007] Further, as shown in FIG.
(25a, 25b) are adjacent island-shaped semiconductor layers 22, 23.
(Light emitting diodes) are connected and divided into two groups so as to belong to different groups, and adjacent island-shaped semiconductor layers 2
2 and 23 are connected to the same individual electrode 24.

In such a light emitting diode array, each light emitting diode can be made to emit light selectively by selecting a combination of the individual electrode 24 and the common electrode 25 (25a, 25b) and flowing a current.

[0009]

However, in the semiconductor light emitting device having this configuration, there is a problem that the number of connection points with an external circuit increases as the number of light emitting diodes increases.
This will be described below.

In each of the conventional examples, not only the process becomes complicated, but also the number of connection electrodes with external circuits increases, and the area of the connection electrodes occupying a chip as each semiconductor light emitting device also increases. The chip size tends to increase. Also, the external circuit itself has become complicated.

In order to solve these problems, it is conceivable to reduce the wiring width. However, there is a limit related to the wiring resistance, and there is a wiring rule of a wiring width of 30 μm or less in practice.

With the increase in chip size, the complexity of external circuits, and the limitation on the wiring width as described above, cost reduction has been attempted, but it has not yet reached a satisfactory level. .

Furthermore, since the island-like semiconductor layers 22 and 23 (light-emitting diodes) are connected and divided into two groups so as to belong to different groups, an individual electrode is provided between the light-emitting diodes. Must be passed,
For that purpose, an individual electrode must be formed between the light emitting diode and the light emitting diode. This causes light reflected by the individual electrode to cause unevenness in printing density and deteriorated printing quality. .

In order to solve such a problem, a plurality of light emitting diodes are divided into a plurality of sets, and a common electrode group for selecting each set and an individual light emitting diode in each of the plurality of sets are set. There has been proposed a technique for reducing the number of connection points by providing an individual electrode group for selecting the number of electrodes (Japanese Unexamined Patent Publication No.
2-152873 and JP-A-9-277592).

However, external connection points from the common electrode group cause an increase in chip width. In order to solve this problem, the line width of the common electrode group may be reduced, but the number of connection points is reduced.
There is a problem that the cost increases due to the increase in the chip width.

Further, in Japanese Patent Application Laid-Open No. 9-277592, a connection point with an external circuit is provided in each block group to reduce the wiring resistance. Therefore, the number of connection points cannot be largely reduced.

Japanese Patent Application Laid-Open No. H11-40842 proposes a technique for forming an electrode with an external circuit on a matrix wiring via an interlayer insulating film in order to reduce the array size width.

However, according to this technique, the matrix wiring in each block always has a structure in which a contact hole is provided in one interlayer insulating film for each light-emitting element, so that a defective contact with the light-emitting element is provided. Is more likely to occur, and as a result, it is fatal to a drive voltage failure.

Also, by using AuGe for the electrode, G
e diffuses to the surface to form an oxide film, which causes wire bonding failure. Further, poor bonding between the interlayer insulating film and the metal causes poor wire bonding.

The present invention has been completed in view of the above, and an object of the present invention is not to form an individual electrode between light-emitting diodes, thereby reducing the printing quality due to light reflected on the individual electrodes. To provide a semiconductor light emitting device that achieves high performance and miniaturization by solving the problems of the conventional device such as preventing a large number of connection points with an external circuit and complicating the process and increasing the chip size. Is to do.

Another object of the present invention is to increase the adhesion between the insulating layer made of synthetic resin and the metal layer to increase the manufacturing yield and thereby reduce the cost of the semiconductor light emitting device with high reliability. Is to provide.

[0022]

A semiconductor light emitting device according to the present invention is provided with a plurality of one conductivity type semiconductor layers and a reverse conductivity type semiconductor layer on a substrate, and a common electrode connected to the one conductivity type semiconductor layer. A plurality of light emitting diodes each having an individual electrode connected to the opposite conductivity type semiconductor layer are arranged and provided, and the plurality of light emitting diodes are divided into groups and connected to the same individual electrode, and are connected to different groups. The semiconductor layers are connected to the same common electrode, and the common electrodes belonging to different groups are connected via an insulating film.

In another semiconductor light emitting device of the present invention, a common electrode is provided on one side of the arrangement line of the light emitting diodes.
An individual electrode is formed on the other side.

Still another semiconductor light emitting device according to the present invention is characterized in that a connection terminal portion for connecting to an external circuit is provided on the insulating film so that an electric current is supplied to an individual electrode or a common electrode.

According to still another semiconductor light emitting device of the present invention, the insulating film made of synthetic resin is formed on an individual electrode or a common electrode obtained by laminating a Cr layer on an Au layer containing Ge. It is characterized by.

Furthermore, the semiconductor light emitting device of the present invention
On the insulating film made of synthetic resin, connection terminals for connecting the connection terminals and / or common electrodes belonging to different groups are arranged, and these connection terminals or connection electrodes are formed of a Cr layer and Au or Al. And a metal layer composed of

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. 1 to 3 show one embodiment of a semiconductor light emitting device according to the present invention. FIG. 1 is a cross-sectional view after forming the above-mentioned insulating film. In this example, the insulating film is made of two kinds of materials. For example, a resin film made of, for example, a polyimide synthetic resin is used as the first insulating film, and an inorganic film made of, for example, silicon nitride is used as the second insulating film.

FIG. 2 is a top view before forming a first insulating film as the insulating film, and FIG. 3 is a top view after forming the first insulating film.

In these figures, reference numeral 1 denotes a substrate on which a semiconductor layer 2 of one conductivity type, a semiconductor layer 3 of opposite conductivity type and an individual electrode 4 are sequentially laminated. Reference numeral 5 denotes a common electrode extending over the one conductivity type semiconductor layer 2 and formed thereon.

Reference numeral 7 denotes a first insulating film made of, for example, a polyimide synthetic resin, a photosensitive resin, silicon nitride, silicon oxide, or the like, and has a thickness of 300.
It is preferable to form it at about 0 ° or more.

Reference numeral 6 denotes a second insulating film made of, for example, silicon nitride, silicon oxide, etc., and has a thickness of 3000.
Å is formed.

One conductivity type semiconductor layer 2 and opposite conductivity type semiconductor layer 3
Are arranged in an array, and a common electrode is formed on one side and an individual electrode is formed on the other side with the arrangement line of the light emitting diodes interposed therebetween.

First, on the common electrode side, reference numeral 8 denotes a connection electrode, which is formed by coating the first insulating film 7 coated on the common electrode 5 and forming the first insulating film 7 on the first insulating film 7. ,
Further, a contact hole 10 a is formed in the first insulating film 7, and an end of the connection electrode 8 reaches the contact hole 10 a and is electrically connected to the common electrode 5.

On the first insulating film 7, pads 9 for connection to an external circuit on the common electrode side as the connection terminal portions are formed, and some of the connection electrodes 8 are also connected to the connection pads 9. .

On the other hand, on the individual electrode side, a contact hole 1 for connecting to an external circuit through the first insulating film 7.
0b is formed, and 11 is a connection pad provided on the contact hole 10b as the connection terminal portion.

Next, each member will be described in detail. Substrate 1
Is, for example, silicon (Si) or gallium arsenide (GaAs).
s) or a single crystal semiconductor substrate such as sapphire (Al ₂ O ₃ )
And the like. In the case of a single crystal semiconductor substrate, a substrate or the like in which the (100) plane is turned off by 2 to 7 ° in the <011> direction is preferably used. For sapphire, C
Surface substrates are preferred.

The one conductivity type semiconductor layer 2 includes a buffer layer 2a,
It comprises an ohmic contact layer 2b and an electron injection layer 2c.

The buffer layer 2a has a thickness of about 2 to 4 μm, and the ohmic contact layer 2b has a thickness of 0.1 to 1.
The electron injection layer 2c is formed to a thickness of about 0 μm.
It is formed to a thickness of about 2 to 0.4 μm.

The buffer layer 2a and the ohmic contact layer 2b are formed of gallium arsenide or the like, and the electron injection layer 2c
Is formed of aluminum gallium arsenide or the like.

The ohmic contact layer 2b is made of one conductivity type semiconductor impurity such as silicon at 1 × 10 ¹⁶ to 10 ^{19 at.}
ms / cm ³ , and the electron injection layer 2c contains one conductivity type semiconductor impurity such as silicon at 1 × 10 ¹⁶ to 10 ¹⁹ at.
oms / cm ³ .

The buffer layer 2a is provided to prevent misfit dislocation due to mismatch of the lattice constant between the substrate 1 and the semiconductor layer, and does not need to contain semiconductor impurities.

The opposite conductivity type semiconductor layer 3 includes the light emitting layer 3a and the second
And a second ohmic contact layer 3c.

The light emitting layer 3a and the second cladding layer 3b have a thickness of 0.1 mm.
The ohmic contact layer 3c is formed to a thickness of about 2 to 0.4 μm, and the thickness of the ohmic contact layer 3c is about d> (0.15 μm−the thickness of the ohmic contact layer).

The light emitting layer 3a and the second cladding layer 3b are made of aluminum gallium arsenide or the like, and the second ohmic contact layer 3c is made of gallium arsenide or the like.

The light emitting layer 3a and the second cladding layer 3b differ in the mixed crystal ratio between aluminum arsenide (AlAs) and gallium arsenide (GaAs) in consideration of the electron confinement effect and the light extraction effect.

The light emitting layer 3a and the second cladding layer 3b contain opposite conductive semiconductor impurities such as zinc (Zn) in an amount of 1 × 10 ¹⁶ to 1 × 10 ^16.
0 ²¹ atoms / cm ³ order containing the second ohmic contact layer 3c contains about ^{1 × 10 19 ~10 21 atoms /} cm 3 the opposite conductivity type semiconductor impurity such as zinc.

The individual electrode 4 and the common electrode 5 have a layer structure in which metal layers of gold / gold germanium / chromium (Au / AuGe / Cr) are sequentially laminated, and are formed to a thickness of about 1 μm or less. By applying heat treatment to this stack,
Ge diffuses and moves to the surface and interface.

External connection electrode 8 and connection pads 9, 1
Reference numeral 1 denotes a configuration in which each metal layer such as / aluminum / gold is sequentially laminated on a base on which Cr is formed at 300 ° or more, and is formed to a thickness of about 1 μm.

As shown in FIG. 1, contact hole 10a
The external connection electrode 8 is provided to extend inside, and a part thereof is formed as a connection pad 9.

The contact hole 10b shown in FIG.
The same constituent material as that of the external connection electrode 8 is provided therein. Thus, elliptical areas A1 and A2 as shown in FIG. 3 are provided. Further, connection pads 11 are formed on these areas A1 and A2.

External connection electrode 8 and connection pads 9, 1
No. 1 is formed by laminating a metal such as / aluminum / gold on a base on which Cr is formed at 300 ° or more, and is formed to a thickness of about 1 μm.

Next, the circuit of the semiconductor light emitting device of the present invention will be described. As shown in FIGS. 2 and 3, the semiconductor light emitting device of the present invention includes an
It is arranged in a line above and connected to the same individual electrode 4 for each adjacent island-shaped semiconductor layer 3 to form a group. 2 and 3 are top views showing one embodiment of the semiconductor light emitting device according to the present invention. FIG. 2 shows a state before the first insulating film 7 is formed, and FIG.
After the formation of the insulating film 7 of FIG.

In FIG. 2, a group shared by the individual electrodes is formed, a plurality of the groups are formed, and the adjacent group is connected to the one conductivity type semiconductor layer 3 by the common electrode 5 without multilayer wiring. I do. A group is formed by continuously forming two groups, such as a group and a group, so as to be further adjacent to each other. As shown in FIG. 3, by connecting the group and group common electrodes with the group and group common electrodes via the first insulating film 7, the independent common electrode connection pad 9 and the individual electrode Is selectively used as an exposure light source for a photosensitive drum for a page printer.

By forming the contact holes 10a and 10b in the first insulating film 7,
Both may be provided with the connection pad 9 and the connection pad 11 simultaneously with the same material.

FIG. 4 shows an electrical connection state. For example, when the common electrode 1 is selected and the individual electrode 1 is selected, the dot N11 is turned on. Similarly, individual electrodes 2, 3,
.. N are independently controlled for the luminous bodies N12, N13, N14... N1n related to the common electrode 1. By sequentially switching the common electrode, all the light emitters can be controlled independently.

By performing such control, for example, to form a 256-bit LED array, eight luminous bodies are connected to one individual electrode as shown in FIG. Next, a similar group is formed next to it, and a group having 16 light-emitting bodies and a group having up to 32 groups each having a structure formed by connecting eight independent common electrodes are formed. Further, on the first insulating film 7 formed on the common electrode wiring 4, a connection pad 9 which is a connection terminal portion with an external circuit is formed.

Thus, according to the semiconductor light-emitting device of the present invention, the common electrode 5 and the individual electrode 4 do not need to be provided between the light-emitting elements, which are light-emitting diodes. The reflected light from the electrodes is eliminated, so that the printing quality is not adversely affected.

Further, as shown in FIG.
By forming the connection pad 9 which is a connection terminal portion with the external circuit on the first insulating film 7 formed thereon, the chip size can be designed smaller than the conventional one.

When a 256-bit chip is assumed, when the number of connection points with the outside is counted, the number of contact holes 10b for connecting individual electrodes is 32, and the number of connection pads 9 of the external connection common electrode connected to the common electrode is 8. , A total of 40 points. Although the conventional common electrode is not divided, the number of connection points can be greatly reduced to 40/257 compared to 256 individual electrodes and 257 points of one common electrode. Since the number of connection points can be drastically reduced in this manner, the wiring rules of the external circuit can be simplified and the cost can be reduced.

In addition, according to the semiconductor light emitting device having the above configuration, the first insulating film 7 made of a synthetic resin such as a polyimide synthetic resin or a photosensitive resin is coated on the individual electrodes 4 and the common electrode 5. In the configuration, these electrodes 4 and 5 have a layer structure in which each metal layer of gold / gold germanium / chromium (Au / AuGe / Cr) is sequentially laminated, so that the diffusion of Ge can be prevented by the Cr layer, Thereby, the adhesion of the first insulating film 7 could be improved.

When the external connection electrodes 8 and the connection pads 9 and 11 are formed on the first insulating film 7 made of a synthetic resin such as a polyimide synthetic resin or a photosensitive resin, these are formed of Cr / By laminating a metal composed of aluminum / gold or the like, it was possible to enhance the adhesion with the Cr layer.

Accordingly, the wire bonding property is improved as described below.

AuGe or the like is used for the ohmic electrode used for connection to an external circuit, and even if the wire bonding property is remarkably reduced due to Ge oxidation, Cr and oxygen deposited on the surface combine with Cr by interposing Cr. This also increases the adhesion.

At the same time, Ge cannot be further diffused to the surface even in the subsequent heat treatment, so that the wire bonding property on the connection pad 11 side can be improved.

Furthermore, as in the case of the connection pads 11 for the individual electrodes, the above-mentioned simultaneously formed Cr is also used for the metal-to-metal bonding via the first insulating film 7, so that the contact failure between the metals is poor. In addition, wire bonding defects can be drastically reduced.

That is, in the metal-metal bonding, problems such as electrical contact failure and electrode peeling are apt to occur due to the influence of dirt or oxide film in the middle of the process. Easy to bond with oxide layer at interface
Easy to make compounds such as Cr2O7. As a result, the contact was improved both electrically and mechanically, and as a result, the contact failure between the metals and the wire bonding failure were drastically reduced.

The present inventor made both the case where the Cr layer was formed as in this example and the case where the Cr layer was not formed as described below, and the other configurations were the same. Was measured.

That is, a polyimide synthetic resin layer is spin-coated on a Si substrate to a thickness of about 1.5 μm, and then each metal layer is laminated in the same vacuum using a resistance heating type vacuum evaporation apparatus. did. At this time, the thickness of the Cr layer (adhesion layer) was varied as shown in Table 1. Then, a gold wire (diameter: 80 μm) having a length of 20 μm is applied to a rectangular area having a side of 90 μm patterned in this manner.
Then, ball bonding was performed and wire bonding was performed.

Thereafter, as shown in FIG. 7, the bonding strength was measured by a measuring method in which the bonding wire was lifted by a spring-only micro gauge.

[0070]

[Table 1]

Regarding the evaluation of the adhesive strength shown in the table,
It is divided into three types of "double circle", "circle" and "cross", and the double circle is a case where the microgauge shows no more than 5g and does not peel off. This is the case when it did not come off. Crosses indicate poor wire bonding.

As is clear from this table, it can be seen that the provision of the Cr layer significantly improved the adhesive strength.

Next, a method for manufacturing the above-described semiconductor light emitting device will be described.

First, a semiconductor layer 2 of one conductivity type and a semiconductor layer 3 of opposite conductivity type are sequentially formed on a single crystal substrate 1 by MOCVD or the like.

When these semiconductor layers 2 and 3 are formed,
First, set the substrate temperature to 400 to 500 ° C. and
After forming an amorphous gallium arsenide film to a thickness of 000 °, the substrate temperature is raised to 700 to 900 ° C. to form semiconductor layers 2 and 3 having a desired thickness.

In this case, TMG ((C
H_Three)_ThreeGa), TEG ((C_TwoH_Five) _ThreeGa), arsine
(AsH_Three), TMA ((CH_Three)_ThreeAl), TEA
((C_TwoH_Five)_ThreeAl) is used to control the conductivity type.
Silane (SiH_Four), Selenization
Hydrogen (H_TwoSe), TMZ ((CH_Three)_ThreeZn) etc.
The carrier gas is H_TwoEtc. are used
You.

The semiconductor layers 2 and 3 are patterned in an island shape so that adjacent elements are electrically separated from each other. This etching is performed by wet etching using a sulfuric acid-hydrogen peroxide-based etchant, dry etching using CCl ₂ F ₂ gas, or the like.

Next, the opposite conductivity type semiconductor layer 3 is formed so that a part of the one conductivity type semiconductor layer 2 on one end side is exposed and a region adjacent to the one conductivity type semiconductor layer 2 is exposed. The opposite conductivity type semiconductor layer 3 is etched so as to be formed narrower than the semiconductor layer 2. This etching is also performed by wet etching using a sulfuric acid-hydrogen peroxide-based etchant, dry etching using CCl ₂ F ₂ gas, or the like.

Next, a silane gas (S
Using iH ₄ ) and ammonia gas (NH ₃ ), a second insulating film 6 made of silicon nitride is formed and patterned. Further, chromium, gold germanium, and gold as an ohmic electrode of the first layer are formed by an evaporation method or a sputtering method, and the individual electrode 4 and the common electrode 5 are patterned.

Then, a first insulating film 7 made of polyimide is formed and patterned. At this time, the common electrode 5
Forms a contact hole 10a connecting the common electrodes by photofabrication because the first insulating film 7 covers the common electrode. At this time, a contact hole 10b for exposing the individual electrode 4 covered with the first insulating layer 7 is also formed at the same time.

Thereafter, the connection electrode 8 and the connection pad 9 for the common electrode, and the connection pad 11 for the individual electrode laminated on the contact hole 10b are simultaneously formed. These electrodes are formed by a vapor deposition method or a sputtering method.
Alternatively, Cr and Al are sequentially laminated.

[0082]

As described above, according to the semiconductor light emitting device of the present invention, a plurality of one conductivity type semiconductor layers and a reverse conductivity type semiconductor layer are provided on a substrate, and a common electrode is provided on the one conductivity type semiconductor layer. A plurality of light emitting diodes each having an individual electrode connected to the opposite conductivity type semiconductor layer are arranged and provided, and the plurality of light emitting diodes are divided into groups and connected to the same individual electrode to provide different groups. By connecting the opposite conductive type semiconductor layers belonging to the same common electrode to the same common electrode, and further connecting the common electrodes belonging to different groups via the insulating film,
A common electrode is formed on one side and an individual electrode is formed on the other side, with the arrangement line of the light emitting diodes interposed, so that the common electrode and the individual electrode need to be arranged between the light emitting diodes. There is no reflected light from the individual electrodes between the light emitting diodes, which does not adversely affect the print quality, and the number of connection points with external circuits is large, the process is complicated, and the chip size is increased. By eliminating the points, the wiring is simple, the number of connection points with the outside can be greatly reduced, and the number of connection points can be drastically reduced, simplifying the wiring rules of the external circuit and reducing the cost. Thus, a high-performance and compact semiconductor light emitting device can be provided.

In the present invention, Au containing Ge is used.
An insulating film made of a synthetic resin is formed on an individual electrode or a common electrode formed by laminating a Cr layer on a layer, or a connection terminal portion and / or a common electrode is formed on an insulating film made of a synthetic resin. In addition to providing connection electrodes, these connection terminal portions or connection electrodes are formed by sequentially laminating a Cr layer and a metal layer made of Au or Al, so that the adhesion between the metal layer and the insulating film is increased, and wire bonding is performed. The performance was also improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor light emitting device according to the present invention.

FIG. 2 is a top view showing a state before multi-layer wiring of the semiconductor light emitting device according to the present invention.

FIG. 3 is a top view showing a state after multi-layer wiring of the semiconductor light emitting device according to the present invention.

FIG. 4 is a diagram showing an electrical configuration of an embodiment of the semiconductor light emitting device according to the present invention.

FIG. 5 is a sectional view showing a conventional semiconductor light emitting device.

FIG. 6 is a plan view showing a conventional semiconductor light emitting device.

FIG. 7 is an explanatory diagram for measuring the performance of a wire bond.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... One conductivity type semiconductor layer 3 ... Reverse conductivity type semiconductor layer 4 ... Individual electrode 5 ... Common electrode 6 ... Second insulating film 7 ... First insulating film 8 ... Connection electrode 9 ... Connection pad 10a, 10b: Contact hole 11: Connection pad

Continued on the front page F term (reference) 2C162 AH04 AH40 FA04 FA17 FA23 5F041 AA31 AA47 CA36 CA82 CA85 CA87 CB22 DA07 DA20 DA41 FF13

Claims (5)

[Claims] 1. A semiconductor device comprising: a plurality of one conductivity type semiconductor layers and a reverse conductivity type semiconductor layer provided on a substrate; a common electrode connected to the one conductivity type semiconductor layer; and an individual electrode connected to the opposite conductivity type semiconductor layer. In a semiconductor light-emitting device in which a plurality of light-emitting diodes are arranged and provided, the light-emitting diodes are divided into groups and connected to the same individual electrode, and opposite conductive semiconductor layers belonging to different groups are connected to the same common electrode. A semiconductor light-emitting device comprising: a plurality of common electrodes connected to different groups via an insulating film; 2. An arrangement line of said light emitting diodes,
2. The semiconductor light emitting device according to claim 1, wherein a common electrode is formed on one side and an individual electrode is formed on the other side. 3. The semiconductor light-emitting device according to claim 1, wherein a connection terminal portion for connecting to an external circuit is provided on the insulating film so as to supply current to an individual electrode or a common electrode. 4. The semiconductor according to claim 1, wherein said insulating film made of synthetic resin is formed on an individual electrode or a common electrode obtained by laminating a Cr layer on an Au layer containing Ge. Light emitting device. 5. A connecting electrode for connecting said connecting terminal portions and / or common electrodes belonging to different groups on said insulating film made of synthetic resin, and said connecting terminal portions or connecting electrodes are made of Cr. 4. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed by sequentially stacking a layer and a metal layer made of Au or Al.