JP2001319890A - Processing system of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing system of a substrate, in which adhesion of dust to the substrate can be prevented as much as possible at the time of irradiating amorphous silicon with an Xe-Cl excimer laser beam. SOLUTION: A movable substrate stage 32 for mounting a substrate 21 deposited with amorphous silicon is disposed in a processing chamber 31a. Amorphous silicon of the substrate 21 mounted on the movable substrate stage 32 is irradiated with an Xe-Cl excimer laser beam B by a beam irradiating means. Each inner face of the processing chamber 31a is applied with a processing chamber viscous material 34 having viscosity. Dust floating in the processing chamber 31a adheres to the processing chamber viscous material 34 and adhesion of dust to the substrate 21 can be prevented as much as possible.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing apparatus for converting amorphous silicon into polycrystalline silicon.

[0002]

2. Description of the Related Art Conventionally, in an active matrix type liquid crystal display device, since an active layer of a semiconductor can be formed uniformly on a large-area substrate at a relatively low temperature, an amorphous silicon thin film transistor is used as a switching element of a display pixel. Is used. In recent years, thin film transistors have been used not only for switching elements in a display pixel area for display but also for driving circuit elements formed around a display pixel area on the same substrate, that is, in a frame portion.

As a thin film transistor of a peripheral driving circuit element, a polycrystalline silicon thin film transistor using polycrystalline silicon having a higher field effect mobility than an amorphous silicon thin film transistor for an active layer of a semiconductor is used. I have.

Here, as the polycrystalline silicon thin film transistor, polycrystalline silicon used for an active layer of a semiconductor is usually formed on a parallel plate type radio frequency (RF) plasma chemical vapor deposition on an insulating substrate such as glass or quartz. An amorphous silicon thin film is formed using a growth method (Chemical Vapor Deposition). Next, the insulating substrate is heated to degas hydrogen in the amorphous silicon thin film. afterwards,
The amorphous silicon thin film is irradiated with an energy beam such as an Xe-Cl excimer laser to melt and recrystallize the amorphous silicon thin film to form polycrystalline silicon.

Further, a movable process chamber stage is usually installed in a process chamber of the energy beam irradiation apparatus. A substrate is set on the process chamber stage, and the substrate is scanned with the energy beam to be irradiated. hand,
The entire substrate is irradiated with an energy beam to polycrystallize the entire substrate.

If the surface of the amorphous silicon is contaminated or particles are adhered during the irradiation with the energy beam, the contamination may be caused by the irradiation of the energy beam. In some cases, it may dissolve into crystalline silicon or affect the crystallinity of polycrystalline silicon, thereby affecting the characteristics of the thin film transistor.

For this reason, the surface of amorphous silicon is usually cleaned before irradiation with an excimer laser to remove surface contamination, attached particles, and the like.

[0008]

However, as a main source of dust generated in the process chamber of the energy beam irradiation apparatus, dust may enter from the outside, but it may be caused by wear of movable parts in the process chamber. There is dust generation, or dust generation from the substrate due to rubbing between the mechanism and the substrate. Therefore, a gate door may be attached to the substrate entrance of the process chamber in order to prevent dust from entering from outside. Although the entrance of dust from the outside can be reduced by this gate door, since the gate door itself is a movable part,
It can also be a source of dust.

Further, an air current generated when the substrate is placed on the stage of the process chamber, an exhaust air generated when the process chamber is evacuated, that is, an air flow generated at the time of venting, and an air flow generated when the process chamber is purged with an inert gas. May wind up dust, dust, particles and the like in the process chamber and adhere to the surface of the substrate.

[0010] Therefore, no matter how much the surface of the amorphous silicon is cleaned before the irradiation with the energy beam, particles adhered to the surface of the substrate cannot be removed in the process chamber of the energy beam irradiation device. For this reason, dust and the like attached in the process chamber are affected by the characteristics of polycrystalline silicon,
This has a problem in that the performance of the thin film transistor is adversely affected, and it is not possible to prevent dust or the like from adhering to the substrate surface when irradiating the amorphous silicon with the energy beam.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing apparatus capable of minimizing adhesion of dust or the like to a substrate when irradiating an amorphous silicon with an energy beam. And

[0012]

According to the present invention, there is provided a process chamber having a process chamber stage on which a substrate on which amorphous silicon is deposited is located, and a process chamber having a process chamber stage located within the process chamber. A beam irradiation means for irradiating amorphous silicon with an energy beam to convert it to polycrystalline silicon, and a process chamber adhesive provided on the inner surface of the process chamber and having an adhesive property.

In this configuration, while the substrate is set on the stage of the process chamber, the amorphous silicon on the substrate is irradiated with an energy beam by beam irradiation means to dissolve the amorphous silicon and then recrystallize. By making this amorphous silicon into polycrystalline silicon, and by providing a process chamber adhesive having adhesiveness on the inner surface of the process chamber, dust, dust or particles in the process chamber adhere to the adhesive, Even when an air current or the like is generated in the process chamber, the dust, dust, or particles do not float in the process chamber, and adhesion of the substrate, particularly, dust, dust, or particles on the substrate is minimized. .

Further, a front chamber provided adjacent to the process chamber and having a front chamber stage for positioning a substrate, and a front chamber and a process chamber are provided between the front chamber and the process chamber to isolate the atmosphere in the front chamber and the process chamber. The vehicle comprises a gate door and an adhesive material provided on an inner surface of the front chamber and having an adhesive property.

In this configuration, a front chamber for supplying a substrate to the process chamber is provided adjacent to the process chamber, and a gate door is provided between the front chamber and the process chamber. Since the adhesive material is provided in the front chamber, the adhesion of the substrate in the front chamber, in particular, dust, dust or particles on the substrate is minimized. For this reason, it is possible to prevent dust, dust, particles, or the like from entering the process chamber from the front chamber through the gate door. Therefore, adhesion of a substrate, particularly dust, dust, particles, or the like on the substrate in the process chamber is more efficiently prevented.

Further, the adhesive is water stored in the process chamber or the front chamber.

In this configuration, the water stored in the process room or the front room is filled with debris in the process room or the front room,
Dust or particles are adsorbed, so with a simple structure, even if airflow occurs in the process chamber or the front chamber, adhesion of dust, dust, particles, etc. on the substrate, especially on this substrate, is minimized. .

Further, there is provided a process chamber evacuation means or a front chamber evacuation means for evacuating the process chamber or the front chamber.

In this configuration, since the process chamber or the front chamber is evacuated to evacuate the process chamber or the front chamber, before the energy beam is irradiated to the amorphous silicon of the substrate by the beam irradiation means. In this state, the process chamber or the front chamber is evacuated by the process chamber evacuation means or the front chamber evacuation means, thereby exhausting dust, dust, particles, and the like in the process chamber or the front chamber. Therefore, adhesion of dust, dust, particles, or the like on the substrate, particularly on the substrate, is more efficiently prevented.

Further, there is provided a process chamber gas supply means or a front chamber gas supply means for supplying an inert gas into the process chamber or the front chamber.

In this configuration, since the process chamber gas supply means or the pre-chamber gas supply means for supplying an inert gas to the process chamber or the pre-chamber is provided, the energy beam is applied to the amorphous silicon of the substrate by the beam irradiation means. In a state before the irradiation, the process chamber gas supply means or the front chamber gas supply means supplies an inert gas into the process chamber or the front chamber, thereby exhausting dust, dust or particles in the process chamber or the front chamber. For this reason, adhesion of dust, dust, particles, or the like on the substrate, particularly on the substrate, is more efficiently prevented.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a first embodiment of the substrate processing apparatus according to the present invention will be described below with reference to FIG.

In FIG. 1, reference numeral 11a denotes a substrate processing apparatus, which is a manufacturing apparatus for manufacturing polycrystalline silicon used for a semiconductor active layer of a thin film transistor.

The substrate processing apparatus 11a has a processing chamber 31a as a process chamber for converting amorphous silicon formed on a substantially rectangular flat substrate 21 into polycrystalline silicon. In the processing chamber 31a, when the amorphous silicon of the substrate 21 is converted into polycrystalline silicon, the substrate 21 is positioned, and for example, a movable substrate stage 32 as a process chamber stage on which the substrate 21 is placed is provided. I have. This movable substrate stage
32 is a substantially rectangular flat plate larger than the substrate 21 and has a processing chamber 31a.
It is movable to transfer the substrate 21 placed on the movable substrate stage 32 to a predetermined position by a predetermined operation.

Further, an Xe-Cl excimer laser beam B as an energy beam is applied to the upper part of the processing chamber 31a through a transparent window 33 made of quartz or the like on the upper surface of the processing chamber 31a. Substrate placed on movable substrate stage 32
A beam irradiation means (not shown) for irradiating the amorphous silicon 21 is provided. At this time, the movable substrate stage 32
Means Xe-Cl excimer laser beam B
Is positioned below the window 33 when irradiating light.

Here, the movable substrate stage 32 is a Xe-
The substrate 21 is scanned relative to the Cl excimer laser beam B, and for example, the amorphous silicon of the substrate 21 placed on the movable substrate stage 32 is irradiated with Xe-
By scanning with the Cl excimer laser beam B, the entire surface of the substrate 21 is irradiated with the Xe-Cl excimer laser beam B.

Further, on each inner surface of the processing chamber 31a, a processing chamber adhesive material 34 such as an adhesive tape or an adhesive sheet is adhered as an adhesive material for the processing chamber having an adhesive property. Due to the adhesive force of the processing chamber adhesive material 34 itself, the processing chamber adhesive material 34 adheres dust, dust, particles, or the like floating in the processing chamber 31a.

The substrate 21 is provided on one side of the processing chamber 31a.
Are connected in a state in which a substantially cylindrical transfer chamber 41 through which the air flows. Inside the transfer chamber 41, an in-apparatus transfer robot 42 for mounting the substrate 21 on the upper part and mounting the substrate 21 on the movable substrate stage 32 is provided.

Further, on each inner surface of the transfer chamber 41, a sticky transfer chamber adhesive material 43 such as an adhesive tape or an adhesive sheet is stuck. The transfer chamber adhesive material 43 is moved by the adhesive force of the transfer chamber adhesive material 43 itself.
Dust, dust or particles floating inside 41

Further, one side of the transfer chamber 41 facing the side connected to the processing chamber 31a is provided with a substrate 2 from the outside into the processing chamber 31a.
Before transporting 1, the load lock chamber 51 as a front chamber for storing the substrate 21 is once connected in a communicating state. In the load lock chamber 51, a load lock inner stage 52 as a front chamber stage on which the substrate 21 is placed is disposed. This stage 52 inside the load lock
It is formed in a substantially rectangular flat plate shape slightly smaller than 21, and is fixed to substantially the center of the bottom of the load lock chamber 51.

Further, on each inner surface of the load lock chamber 51,
A load lock chamber adhesive material 53 as an adhesive material in the front chamber having an adhesive property such as an adhesive tape or an adhesive sheet is attached. Due to the adhesive force of the load lock chamber adhesive material 53 itself, the load lock chamber adhesive material 53 causes dirt, dust, particles, and the like floating in the load lock chamber 51 to adhere thereto.

Here, between the transfer chamber 41 and the load lock chamber 51, a gate door 54a for separating the transfer chamber 41 and the processing chamber 31a from the load lock chamber 51 is formed so as to be openable and closable. The gate door 54a shuts off the atmosphere in the load lock chamber 51 and the atmosphere in the transfer chamber 41 and the processing chamber 31 by closing the gate door 54a.

Further, on one side of the load lock chamber 51 facing the side connected to the transfer chamber 41, a load lock gate door 55 as a front chamber gate door for isolating the inside of the load lock chamber 51 from the outside is provided. It is formed to be openable and closable. The load lock gate door 55 shuts off the outside atmosphere and the atmosphere in the load lock chamber 51 by closing the load lock gate door 55.

At the bottom of the processing chamber 31a, a processing chamber exhaust port as a substantially elongated cylindrical process chamber exhaust port for forcibly exhausting the atmosphere such as air floating in the processing chamber 31a and the transfer chamber 41 is provided. 61 is installed. At the end of the processing chamber exhaust port 61, a processing chamber evacuation unit (not shown) serving as a process chamber evacuation unit (not shown) for evacuating the processing chamber 31a and the transfer chamber 41 is attached.

Further, on the upper surface of the processing chamber 31a, the processing chamber 3
A processing chamber gas inlet as a substantially elongated cylindrical processing chamber gas inlet for supplying inert gas into 1a and into the transfer chamber 41
62 is installed. At the front end of the processing chamber gas inlet 62, a processing chamber gas supply unit (not shown) for supplying an inert gas into the processing chamber 31a and the transfer chamber 41 is attached.

Further, a load lock chamber exhaust port 63 as a substantially elongated cylindrical front chamber exhaust port for forcibly exhausting air or the like drifting in the load lock chamber 51 is also provided at the bottom of the load lock chamber 51. Installed. At the end of the load lock chamber exhaust port 63, a load lock chamber vacuum exhaust means as a not-shown front chamber vacuum exhaust means for evacuating the load lock chamber 51 is attached.

Similarly, a load lock chamber gas inlet 64 serving as a substantially elongated cylindrical front chamber gas inlet for supplying an inert gas into the load lock chamber 51 is attached to the upper surface of the load lock chamber 51. Have been. At the end of the load lock chamber gas inlet 64, a load lock chamber gas supply means (not shown) serving as a front chamber gas supply means for supplying an inert gas into the load lock chamber 51 is attached.

Further, a cassette 71 capable of accommodating a plurality of substrates 21 is provided in front of the load lock gate door 55 of the load lock chamber 51, that is, outside the load lock chamber. In the cassette 71, a plurality of, for example, seven substrate accommodation ports 72 for accommodating the substrates 21 are provided in a multistage manner. Furthermore, the cassette 71 and the load lock gate door 55
An atmosphere transfer robot 75 for taking out the substrate 21 from the substrate accommodation port 72 of the cassette 71 and mounting the substrate 21 on the load lock inner stage 52 of the load lock chamber 51 is provided between them.

Next, the operation of the first embodiment will be described.

First, the gate door 54a is closed, and the inside of the processing chamber 31a and the transfer chamber 41 are evacuated by the processing chamber evacuation means. Thereafter, an inert gas is supplied by the processing chamber gas supply means. The load lock gate door 55 is opened with the inert gas supplied in this manner. Thereafter, the substrate 21 is taken out from the substrate accommodation port 72 of the cassette 71 by the atmospheric transfer robot 75, and the load lock stage 52 in the load lock chamber 51 is taken out.
Place on top.

Next, the load lock gate door 55 is closed,
Avoid intrusion of particles from outside. And
The inside of the load lock chamber 51 is evacuated by the load lock chamber evacuation means. Thereafter, an inert gas is supplied into the load lock chamber 51 by the load lock chamber gas supply means.
With the inert gas supplied as described above, the atmosphere in the load lock chamber 51 is adjusted to the atmosphere in the processing chamber 31a and the transfer chamber 41.

Thereafter, the gate door 54a is opened, and the substrate 21 placed on the load lock inner stage 52 by the in-apparatus transfer robot 42 is placed on the movable substrate stage 32 in the processing chamber 31a via the transfer chamber 41. Place.

Then, the movable substrate stage 32 is scanned with respect to the Xe-Cl excimer laser beam B irradiated by the beam irradiation means, and the Xe-Cl excimer laser beam B is applied to the entire surface of the amorphous silicon of the substrate 21. Irradiate.
Then, the amorphous silicon on the substrate 21 is melted and then recrystallized to be polycrystalline silicon.

Thereafter, the substrate 21 is transferred to the transfer robot 42 in the apparatus.
As a result, the processing chamber 31a is returned to the load lock chamber 51.

As described above, according to the first embodiment, the substrate 21 placed on the movable substrate stage 32 in the processing chamber 31a is scanned, and the amorphous silicon of the substrate 21 is scanned. By irradiating the Xe-Cl excimer laser beam B, the amorphous silicon is dissolved and then recrystallized into polycrystalline silicon, so that polycrystalline silicon used for a semiconductor active layer of a thin film transistor can be easily manufactured. Can be.

When transporting the substrate 21 in the substrate processing apparatus 11a, the gate door 54a and the load lock gate door 5
Dust is generated due to abrasion of mechanical parts such as opening / closing of 5, movement of the in-apparatus transfer robot 42, and movement of the movable substrate stage 32. Normally, this dust may adhere to the surface of the substrate 21 or the like. Adhere the processing chamber adhesive material 34 on each inner surface of the chamber 31a,
In addition, by adhering the transfer chamber adhesive material 43 to each inner surface of the transfer chamber 41, dust, dust, particles, and the like in the processing chamber 31a and the transfer chamber 41 are transferred to the processing chamber adhesive material 34 and the transfer chamber adhesive material 43. Adhere to.

Therefore, even when an air current is generated in the processing chamber 31a and the transfer chamber 41, such dust, dust, particles, and the like do not float in the processing chamber 31a and the transfer chamber 41. Therefore, the substrate 21, especially this substrate 21
Adhesion of dust, dust or particles on the top can be prevented as much as possible.

Since the processing chamber 31a is provided with the processing chamber evacuation means and the processing chamber gas supply means, the gate door 54a is provided.
Is closed, before the amorphous silicon of the substrate 21 is irradiated with the Xe-Cl excimer laser beam B, the processing chamber 31a and the transfer chamber 41 are evacuated by the processing chamber evacuation means. When an inert gas is supplied into the processing chamber 31a and the transfer chamber 41 by the processing chamber gas supply unit, dust, dust, particles, and the like in the processing chamber 31a and the transfer chamber 41 can be exhausted to the outside. Therefore, adhesion of dust, dust, particles, or the like on the substrate 21, especially on the substrate 21, can be more efficiently prevented.

Further, the substrate 21 is placed in a load lock stage.
An air flow is generated when the apparatus is mounted on the apparatus 52 or when the load lock chamber 51 is evacuated to supply an inert gas. At this time, if particles, dust, dust, and the like are present in the load lock chamber 51, the generated air current causes the particles to fly and adhere to the surface of the substrate 21, for example. Since the adhesive material 53 for the load lock chamber is adhered to each inner surface of the 51, it is possible to minimize the particles and the like once attached to the adhesive material 53 for the load lock chamber from flying up again and adhering to the surface of the substrate 21 and the like.

Therefore, the substrate 21 is transferred into the processing chamber 31a after passing through the load lock chamber 51, so that the transfer chamber 41 and the processing chamber 41 are externally transmitted through the load lock gate door 55 and the gate door 54a. It is possible to prevent dust, dust, particles, or the like from entering the inside of the 31a. Therefore, it is possible to more efficiently prevent the substrate 21 in the processing chamber 31a and the transfer chamber 41 from adhering, in particular, dust, dust, or particles on the substrate 21.

Since the load lock chamber 51 is provided with the load lock chamber evacuation means and the load lock chamber gas supply means, the load lock chamber vacuum is closed before the load lock gate door 55 is closed and the gate door 54a is opened. After the inside of the load lock chamber 51 is evacuated by the exhaust means, the inert gas is supplied into the load lock chamber 51 by the load lock chamber gas supply means, so that dust, dust, or particles in the load lock chamber 51 can be externalized. Can be exhausted.

Therefore, before the substrate 21 is placed on the movable substrate stage 32 in the processing chamber 31a, the load lock chamber
Since dust, dust, particles, and the like adhering to the substrate 21 are removed in the inside 51, the adhesion of dust, dust, particles, or the like to the substrate 21 can be more efficiently prevented.

Therefore, the inner surface of each of the processing chamber 31a, the transfer chamber 41, and the load lock chamber 51 is provided with the processing chamber adhesive material 3.
4. By sticking the transfer chamber adhesive material 43 and the load lock chamber adhesive material 53, it is possible to suppress soaring of dust, dust, particles, and the like in the substrate processing apparatus 11a. Adhesion to the substrate 21 can be suppressed. Therefore, a thin film transistor having stable characteristics can be formed.

After the inside of the processing chamber 31a and the inside of the transfer chamber 41 are evacuated by the processing chamber evacuation means, an inert gas is supplied by the processing chamber gas supply means. Substrate 21
The amorphous silicon is irradiated with a Xe-Cl excimer laser beam B, and when this amorphous silicon is melted and recrystallized, excess oxygen or oxygen is removed from the atmosphere in the processing chamber 31a and the transfer chamber 41. Deterioration of film quality due to taking in impurities can be avoided.

Further, after the load lock chamber 51 is evacuated by the load lock chamber evacuation means and the inert gas is supplied by the load lock chamber gas supply means, extra oxygen and impurities in the load lock chamber 51 are supplied. Can be removed from the load lock chamber 51 to the transfer chamber 41,
As a result, intrusion of dust, dust, particles or the like entering the processing chamber 31a can be prevented, and furthermore, the amorphous silicon on the substrate 21 is irradiated with a Xe-Cl excimer laser beam B to melt the amorphous silicon. In addition, during recrystallization, it is possible to more efficiently avoid film quality degradation due to taking in extra oxygen and impurities from the atmosphere in the processing chamber 31a and the transfer chamber 41.

In the first embodiment, Xe−
The structure in which the amorphous silicon is irradiated with the Cl excimer laser beam B to manufacture the polycrystalline silicon used for the semiconductor active layer of the thin film transistor has been described. However, the present invention is not limited to such a structure. That is, a transfer chamber for transfer or any other configuration may be used except when polycrystalline silicon is manufactured by aging or when polycrystalline silicon is manufactured using electric discharge.

Although the processing chamber 31a, the transfer chamber 41, and the load lock chamber 51 to which the inert gas is supplied after the evacuation has been described, the present invention is not limited to such a configuration. Instead, only vacuum evacuation may be performed.

Furthermore, the case where the adhesive material 34 for the processing chamber, the adhesive material 43 for the transfer chamber, and the adhesive material 53 for the load lock chamber are described as an adhesive tape having an adhesive property is described. A liquid such as water is used as the transfer chamber adhesive material 43 and the load lock chamber adhesive material 53 in the processing chamber 31a, the transfer chamber 41, and the load lock chamber 51.
Even when the liquid is stored in each of the processing chambers 31a, the liquid such as water is in each of the processing chambers 31a, the transfer chamber 41, and the load lock chamber 5.
Adsorbs garbage, dust or particles floating in 1

Therefore, similarly to the case of the adhesive tape or the like, the inside of the processing chamber 31a, the inside of the transfer chamber 41 or the load lock chamber 51
Even when an airflow or the like is generated in the inside, the adhesion of the substrate 21, especially dust, dust or particles on the substrate 21, can be prevented as much as possible. The configuration of the adhesive material 41 and the load lock chamber adhesive material 51 can be simplified.

Next, the configuration of the second embodiment of the present invention will be described with reference to FIG.

The substrate processing apparatus 11b shown in FIG. 2 is basically the same as the substrate processing apparatus 11a shown in FIG. 1, but the transfer chamber 41 and the load lock chamber 51 in the substrate processing apparatus 11a shown in FIG. The substrate 21 is directly placed from the cassette 71 by the atmospheric transfer robot 75 on the movable substrate stage 32 in the processing chamber 31b.

An adhesive material 34 is attached to each inner surface of the processing chamber 31b, and a gate door 54b is formed on one side of the processing chamber 31b so as to be openable and closable. The gate door 54b isolates the inside of the processing chamber 31b from the outside, and closes the gate door 54b to shut off the outside atmosphere and the atmosphere in the processing chamber 31b.

Further, a cassette 71 is provided in front of the gate door 54b of the processing chamber 31b, that is, outside the processing chamber 31b, and a cassette 71 is provided between the cassette 71 and the gate door 54b. The substrate 21 is taken out from the substrate receiving opening 72 of the substrate 71, and the substrate 21 is moved to the movable substrate stage 32 in the processing chamber 31b.
An atmosphere transfer robot 75 to be placed on the top is provided.

Next, the operation of the second embodiment will be described.

The operation of the substrate processing apparatus 11b shown in FIG. 2 is basically the same as that of the substrate processing apparatus 11a shown in FIG.

Then, the gate door 54b of the processing chamber 31b opens,
After the substrate 21 is transferred from the substrate storage port 72 of the cassette 71 to the movable substrate stage 32 in the processing chamber 31b by the atmospheric transfer robot 75, the substrate 21 is placed on the movable substrate stage 32.

Next, after the gate door 54b is closed and the processing chamber 31b is evacuated by the processing chamber evacuation means, an inert gas is supplied by the processing chamber gas supply means.
Exhaust garbage, dust or particles floating inside b.

In this state, the movable substrate stage 32 is scanned with the Xe-Cl excimer laser beam B irradiated by the beam irradiation means, and the Xe-Cl excimer laser beam B Is irradiated.
Then, the amorphous silicon on the substrate 21 is melted and then recrystallized to be polycrystalline silicon.

As described above, according to the second embodiment, since dust, dust, particles, or the like floating in the processing chamber 31b adheres to the adhesive material 34 in the processing chamber, the substrate processing apparatus shown in FIG. The same effect as 11a can be obtained.

Further, every time the substrate 21 is transferred into the processing chamber 31b through the gate door 54b, dust, dust, particles or the like easily enter the processing chamber 31b from the outside. By attaching the processing chamber adhesive material 34, the substrate 21 in the processing chamber 31b, in particular, the substrate 21
The adhesion of dust, dust, particles or the like on the upper side can be more efficiently prevented than in the case of the substrate processing apparatus 11a shown in FIG.

[0071]

According to the present invention, an amorphous silicon on a substrate is irradiated with an energy beam by a beam irradiation means to convert the amorphous silicon into polycrystalline silicon. With the provision, dust, dust, particles, or the like in the process chamber adheres to the adhesive material in the process chamber. Therefore, the adhesion of dust, dust, particles, or the like on the substrate, particularly on the substrate, can be prevented as much as possible, and has stable characteristics. Polycrystalline silicon can be formed.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a first embodiment of a substrate processing apparatus according to the present invention.

FIG. 2 is a sectional view showing a second embodiment of the present invention.

[Explanation of symbols]

 11a, 11b Substrate processing equipment 21 Substrates 31a, 31b Processing chamber as processing chamber 32 Movable substrate stage as processing chamber stage 34 Processing chamber adhesive material as processing chamber adhesive material 51 Load lock chamber as front chamber 52 Front chamber Stage inside load lock as stage 53 Load lock room adhesive material as front room adhesive material 54a, 54b Gate door

Claims (8)

[Claims] 1. A process chamber having a process chamber stage on which a substrate on which amorphous silicon is deposited is located, and an energy beam is applied to the amorphous silicon on the substrate located on the process chamber stage in the process chamber. A substrate processing apparatus, comprising: a beam irradiation means for irradiating polycrystalline silicon; and a process chamber adhesive provided on an inner surface of the process chamber and having an adhesive property. 2. The substrate processing apparatus according to claim 1, wherein the adhesive is water stored in a process chamber. 3. A process chamber evacuating means for evacuating the process chamber.
The substrate processing apparatus according to any one of the preceding claims. 4. The substrate processing apparatus according to claim 1, further comprising a process chamber gas supply unit that supplies an inert gas into the process chamber. 5. A front chamber, which is provided adjacent to the process chamber and has a front chamber stage for positioning a substrate, and is provided between the front chamber and the process chamber to isolate the atmosphere in the front chamber and the process chamber. The substrate processing apparatus according to any one of claims 1 to 4, further comprising: a gate door; and an adhesive material provided on an inner surface of the front chamber and having an adhesive property. 6. The substrate processing apparatus according to claim 5, wherein the adhesive is water stored in the front chamber. 7. The substrate processing apparatus according to claim 5, further comprising a front chamber evacuation means for evacuating the front chamber. 8. The substrate processing apparatus according to claim 5, further comprising a front chamber gas supply means for supplying an inert gas into the front chamber.