JP2001316866A5 - - Google Patents
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- JP2001316866A5 JP2001316866A5 JP2000135176A JP2000135176A JP2001316866A5 JP 2001316866 A5 JP2001316866 A5 JP 2001316866A5 JP 2000135176 A JP2000135176 A JP 2000135176A JP 2000135176 A JP2000135176 A JP 2000135176A JP 2001316866 A5 JP2001316866 A5 JP 2001316866A5
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- Japan
- Prior art keywords
- substrate
- plating
- processed
- agent
- unit
- Prior art date
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Description
【特許請求の範囲】
【請求項１】
メッキ形成を促進させる材料とメッキ形成を抑制させる材料とを含む処理剤を被処理基板面に付着させる工程と、
前記処理剤が付着された前記被処理基板面にメッキを施す工程と
を有することを特徴とする半導体装置の製造方法。
【請求項２】
前記付着させる工程は、前記被処理基板を回転させて前記処理剤を前記被処理基板に付着させることを特徴とする請求項１記載の半導体装置の製造方法。
【請求項３】
表面にメッキの種付け層が形成された被処理基板を処理空間に導入する工程と、
前記導入された前記被処理基板を前記処理空間で還元処理する工程とをさらに有し、
前記付着させる工程は、前記処理剤を前記還元処理された被処理基板面に付着させることを特徴とする請求項１または２記載の半導体装置の製造方法。
【請求項４】
前記処理剤は、濡れ性を増大させる成分を含有することを特徴とする請求項１ないし３のいずれか１項に記載の半導体装置の製造方法。
【請求項５】
前記メッキを施す工程によりメッキされた被処理基板面に洗浄液を供給する工程をさらに有することを特徴とする請求項１ないし４のいずれか１項に記載の半導体装置の製造方法。
【請求項６】
被処理基板を回転可能に保持する基板保持部と、前記基板保持部に保持された前記被処理基板面にメッキ形成を促進させる材料とメッキ形成を抑制させる材料とを含む処理剤を供給する処理剤供給ノズルとを備えた処理剤付着ユニットと、
前記処理剤が付着された前記被処理基板面にメッキを施すメッキ処理ユニットと、
前記処理剤付着ユニットから前記処理剤が付着された被処理基板を搬出して前記メッキ処理ユニットに搬入する搬送機構と
を有することを特徴とする半導体装置の製造装置。
[Claims]
(1)
A step of attaching a treatment agent containing a material that promotes plating formation and a material that suppresses plating formation to the surface of the substrate to be processed,
Plating the surface of the substrate to be processed to which the processing agent has been adhered.
(2)
2. The method of manufacturing a semiconductor device according to claim 1, wherein in the attaching step, the treating agent is attached to the treating substrate by rotating the treating substrate.
(3)
A step of introducing a processing target substrate having a plating seeding layer formed on its surface into a processing space,
Further comprising the step of reducing the introduced substrate to be processed in the processing space ,
The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the depositing the treating agent on the target substrate surface on which the is reduction treatment for the deposition.
(4)
4. The method according to claim 1, wherein the processing agent contains a component that increases wettability. 5.
(5)
5. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of supplying a cleaning liquid to a surface of the substrate to be processed plated by the plating step.
6.
A process of supplying a processing agent including a substrate holding unit that rotatably holds a substrate to be processed, and a material that promotes plating and a material that suppresses plating on the surface of the substrate held by the substrate holding unit ; A treatment agent attachment unit having an agent supply nozzle ,
A plating unit for plating the surface of the substrate to which the processing agent is attached ,
A semiconductor device manufacturing apparatus, comprising: a transport mechanism that unloads a substrate to which a processing agent is attached from the processing agent attachment unit and carries the substrate into the plating unit .
また、本発明に係る半導体装置の製造方法は、表面にメッキの種付け層が形成された被処理基板を処理空間に導入する工程と、前記導入された前記被処理基板を前記処理空間で還元処理する工程とをさらに有し、付着させる工程が、還元処理された被処理基板面に当該処理剤を付着させるものであってもよい。 Further, in the method for manufacturing a semiconductor device according to the present invention, a step of introducing a substrate to be processed having a plating seed layer formed on a surface thereof into a processing space; and a step of reducing the introduced substrate to be processed in the processing space. And the step of adhering may include the step of adhering the treatment agent to the surface of the substrate subjected to the reduction treatment .
また、本発明に係る半導体装置の製造装置は、被処理基板を回転可能に保持する基板保持部と、基板保持部に保持された被処理基板面にメッキ形成を促進させる材料とメッキ形成を抑制させる材料とを含む処理剤を供給する処理剤供給ノズルとを備えた処理剤付着ユニットと、処理剤が付着された被処理基板面にメッキを施すメッキ処理ユニットと、処理剤付着ユニットから処理剤が付着された被処理基板を搬出してメッキ処理ユニットに搬入する搬送機構とを有することを特徴とする。 Further, the apparatus for manufacturing a semiconductor device according to the present invention includes a substrate holding unit that rotatably holds a substrate to be processed, a material that promotes plating on the surface of the substrate to be processed held by the substrate holding unit, and suppresses plating. A treatment agent supply unit having a treatment agent supply nozzle for supplying a treatment agent including a material to be treated, a plating treatment unit for plating a surface of a substrate to be treated on which the treatment agent is attached, and a treatment agent from the treatment agent attachment unit. And a carrying mechanism for carrying out the substrate to which the substrate is attached and carrying the substrate into the plating unit .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000135176A JP2001316866A (en) | 2000-05-08 | 2000-05-08 | Method and equipment for manufacturing semiconductor device |
| US09/849,347 US6848457B2 (en) | 2000-05-08 | 2001-05-07 | Liquid treatment equipment, liquid treatment method, semiconductor device manufacturing method, and semiconductor device manufacturing equipment |
| KR1020010024670A KR100802810B1 (en) | 2000-05-08 | 2001-05-07 | Liquid treatment equipment, liquid treatment method, semiconductor device manufacturing method, and semiconductor device manufacturing equipment |
| TW090110890A TW509971B (en) | 2000-05-08 | 2001-05-08 | Liquid treatment equipment, liquid treatment method semiconductor device manufacturing method, and semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000135176A JP2001316866A (en) | 2000-05-08 | 2000-05-08 | Method and equipment for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001316866A JP2001316866A (en) | 2001-11-16 |
| JP2001316866A5 true JP2001316866A5 (en) | 2007-06-21 |
Family
ID=18643306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000135176A Pending JP2001316866A (en) | 2000-05-08 | 2000-05-08 | Method and equipment for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001316866A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004342750A (en) | 2003-05-14 | 2004-12-02 | Toshiba Corp | Method of manufacturing electronic device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000345392A (en) * | 1999-01-26 | 2000-12-12 | Ebara Corp | Copper plating method and device therefor |
| JP3124523B2 (en) * | 1999-01-28 | 2001-01-15 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Copper plating method |
| JP3498306B2 (en) * | 1999-09-16 | 2004-02-16 | 石原薬品株式会社 | Void-free copper plating method |
-
2000
- 2000-05-08 JP JP2000135176A patent/JP2001316866A/en active Pending
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