JP2001298583A - Image sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a contact type two-dimensional image sensor in which alignment of an image is easily adjusted and which does not need an illuminator. SOLUTION: This image sensor is provided with a photodiode for performing photoelectric conversion of each pixel of the image sensor, a thin film transistor for outputting electric charge and a capacitor for storing the electric charges, and the thin film transistor, the capacitor and wiring are made translucent. Since light transmits parts other than the photodiode in the image sensor, it is possible to visually recognize an image being a reading object and to illuminate the image by outdoor daylight.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor, and more particularly, to a contact type image sensor that reads an image in a state close to an image to be read.

[0002]

2. Description of the Related Art In a state of being close to an image to be read,
A contact type image sensor that reads the image at the same magnification,
It is widely used as input means for image processing devices such as personal computers. Such image sensors include those in which pixels are arranged one-dimensionally and those in which pixels are arranged two-dimensionally.

A one-dimensional image sensor reads an image line by line while changing the relative position with respect to the image. Therefore, it takes a relatively long time to read an image. In addition, when the sensor is moved manually, the speed and direction of the movement are not stable, and the quality of the read image is likely to deteriorate. Further, if a driving mechanism for moving the sensor or the image to be read is provided, the configuration becomes complicated and the size becomes large.

On the other hand, a two-dimensional image sensor can read an entire image at once. Therefore, the time required for reading the image is short, and the quality of the read image is prevented from varying every time. Further, a mechanism for changing the relative position between the sensor and the image is unnecessary. Therefore,
A two-dimensional image sensor is easy to use and easy to simplify the configuration.

[0005]

However, in order to accurately read the reflected light of the light illuminating the original, any image sensor usually has a light-shielding surface opposite to the surface facing the image. In particular, with a two-dimensional image sensor, a user cannot visually recognize an image to be read via the image sensor. For this reason, it is difficult to exactly match the position of the image sensor with respect to the image, and failure to read a desired range of the image is likely to occur.

In a one-dimensional image sensor, it is easy to illuminate an image to be read from the side of a pixel row, but in a two-dimensional image sensor, it is difficult to illuminate a central portion. .

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a contact type two-dimensional image sensor which can easily align with an image and illuminate a document surface satisfactorily. I do.

[0008]

In order to achieve the above object, according to the present invention, a contact type image sensor which reads an image in a state close to an image to be read is provided by a photoelectric conversion unit which generates electric charges by photoelectric conversion. A plurality of pixels each having a two-dimensional array of pixels each having a charge output unit that outputs charges generated by the photoelectric conversion unit, and a region including at least the charge output unit of each pixel is formed on one surface. From the other surface to the other surface.

This image sensor is a contact type two-dimensional sensor. Each pixel has a photoelectric conversion unit and a charge output unit,
At least a part of the region including the charge output portion is light-transmitting. The charge output section itself is also translucent. The user can visually recognize the image to be read through the translucent area, and can illuminate the image with external light through the translucent area.

The charge output section of each pixel is preferably formed of a semiconductor containing silicon. The charge output portion can be easily made light-transmitting.

The charge output section of each pixel can be a thin film transistor. With this configuration, it is possible to increase the light transmission of the charge output unit.

It is preferable that the region of the wiring connecting the photoelectric conversion unit and the charge output unit of each pixel is translucent from one surface to the other surface. The area of the light-transmitting region is increased, and visual recognition of an image and illumination with external light are facilitated. The wiring itself will also be formed of a translucent material,
A conductive oxide, for example, ITO can be used.

It is preferable that the photoelectric conversion unit of each pixel has a function of multiplying the charge generated by the photoelectric conversion. Because a small amount of light can generate a lot of charges,
Even when the environment is dark and the image cannot be brightly illuminated by external light, the image can be reliably read.

It is assumed that each pixel has a charge storage portion for storing the charge generated by the photoelectric conversion portion in a region different from the photoelectric conversion portion and the charge output portion, and the region of the charge storage portion of each pixel is arranged from one surface. The entire surface up to the other surface may be translucent. The area of the translucent area increases,
Visual recognition of images and illumination by external light are facilitated.

The charge storage portion of each pixel is preferably formed of a dielectric containing silicon. The charge storage portion can be easily made light-transmitting.

The region of the wiring connecting the photoelectric conversion unit, the charge storage unit and the charge output unit of each pixel may be made translucent from one surface to the other surface. The area of the light-transmitting region is increased, and visual recognition of an image and illumination with external light are facilitated.

In order to achieve the above object, the present invention also provides a contact-type image sensor for reading an image in a state close to an image to be read, wherein a pixel having at least a part of a light-transmitting region is two-dimensional. In this configuration, the image to be read can be visually recognized by the user through the plurality of pixels. The fact that the user can visually recognize the image also means that the image can be illuminated by external light.

It is preferable that the average light transmittance of the entire arrangement region of a plurality of pixels is 50% or more.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the image sensor of the present invention is applied to an image reading device will be described below with reference to the drawings. FIG. 1 schematically shows the appearance of the image reading apparatus 1 of the present embodiment.

An image reading apparatus 1 includes a contact type image sensor 10 as an example of the present invention and an image sensor 10.
And a housing 2 that accommodates the The image sensor 10 is manufactured on a transparent glass substrate, and the lower surface of the substrate is the lower surface 2 a of the housing 2. The upper surface 2b of the housing 2 is a transparent glass plate. A part of the side surface of the housing 2 slightly protrudes from the lower surface 2a, and the image reading device 1 is configured such that the lower surface 2a of the housing 2, that is, the lower surface of the substrate of the image sensor 10 has a slight surface It is used in a state where it is separated. The image reading device 1 is connected to the lower surface 2 a of the housing 2, that is, the image sensor 10.
M having an image whose lower surface of the substrate is to be read
It is good also as a form used in the state which contacted the surface of.

FIG. 2 schematically shows a cross section of the image sensor 10. The image sensor 10 has a number of pixels 12 arranged two-dimensionally. FIG. 2 is an enlarged view of a range corresponding to two pixels 12. Each pixel 12 has a region A including a photoelectric conversion unit that converts light into an electric signal, and a region B including a charge output unit, a charge storage unit, wiring, and the like, which will be described later. A light-shielding film is provided on the upper surface of the region A. On the other hand, no light-shielding film is provided in the region B, and the region B is made of a light-transmitting material. Therefore, the region B is translucent throughout from the lower surface to the upper surface in contact with the substrate 11. In the specification of the present application, translucency means a property of transmitting light at least in a visible light wavelength region.

As described above, in the image reading apparatus 1 in which each pixel 12 has the translucent area B and the upper surface 2b of the housing 2 is transparent, the user can use the image sensor 10
Can be seen through Further, external light is guided to the original M through the image sensor 10 so that the image sensor 1
It is possible to illuminate the entire range of the document M facing 0.

FIG. 3 shows a circuit configuration for reading out a signal (charge generated by photoelectric conversion) from each pixel 12 of the image sensor 10. Each pixel 12 has a photodiode (PD) 21 as a photoelectric conversion unit and a thin film transistor (TFT) 22 as a charge output unit. The image sensor 10 includes a vertical scanning circuit 31, a horizontal scanning circuit 32, a plurality of transistors 33, an output line 34, and an amplifier 3.
5, a load resistor 36, and a bias power supply 37. In each pixel 12, the photodiode 21 is connected to the source of the thin film transistor 22 by a wiring 24.

The gate of the thin film transistor 22 is connected to the vertical scanning circuit 31 by a wiring 38 for each column in the horizontal (horizontal) direction. The drain of the thin film transistor 22 is connected to the transistor 33 by a wiring 39 for each column in the vertical (vertical) direction, and each transistor 33 is connected to an output line 34. Vertical scanning circuit 3
1 is a control voltage S1 for conducting the thin film transistor 22
Are sequentially output to the wiring 38, and the horizontal scanning circuit 32 outputs the control voltage S2 to turn on the transistor 33 sequentially.
Thereby, the charges of the photodiodes 21 of all the pixels 12 are individually and sequentially transferred to the output line 34 and the amplifier 35.
Is output via

Each pixel 12 has a charge storage section for storing the charge generated by the photodiode 21, and holds the charge until an output instruction is given by the control voltages S1 and S2. FIG. 4 shows an example of a circuit configuration including a charge storage unit of the pixel 12.
Shown in In the example shown in FIG. 4A, a capacitor 23 as a charge storage unit is connected in parallel to a photodiode 21. A photodiode 21 having an anode grounded and a cathode connected to the source of the thin film transistor 22
, A reverse bias voltage is applied.

In the example shown in (b), a capacitor 23 is connected in series with the photodiode 21, and a reverse bias voltage VPD is applied to the photodiode 21 via the capacitor 23. (C) is an example of the photodiode 2
Another thin film transistor 25 is provided between the thin film transistor 1 and the thin film transistor 22, and the capacitor 23 is connected between the thin film transistors 22 and 25. A reverse bias voltage VPD is applied to the photodiode 21 via the thin film transistor 25.

FIG. 5 shows a schematic circuit configuration of the entire image sensor 10. The image sensor 10 includes a CPU 41, R
OM 42, RAM 43, voltage application circuit 44, scanning circuit 4
5, an A / D converter 46, a signal processing circuit 47, and an interface 48. The voltage application circuit 44 supplies a drive voltage VPD to the photodiode 21. The scanning circuit 45 includes the vertical scanning circuit 31 and the horizontal scanning circuit 32 described above.
And read out a signal from each pixel 12. A
The / D converter 46 converts an analog signal output from the amplifier 35 into a digital signal. The signal processing circuit 47
Various processing is performed on the signal digitized by the A / D converter 46 to generate image data representing a read image. The interface 48 outputs the image data generated by the signal processing circuit 47 to an external device.

The CPU 41 controls the operation of the voltage application circuit 44 to the interface 48 to control the operation of the image sensor 10.
Control the whole operation. The ROM 42 stores a program describing a control process performed by the CPU 41 and parameters used for control. The RAM 43 includes an A / D converter 46
And the image data generated by the signal processing circuit 47 are stored. The housing 2 of the image reading apparatus 1 is provided with a key 2d operated by a user to instruct the start of reading, and C
PU41 responds to the signal given from the key 2d,
Start reading the image.

FIG. 6 schematically shows an example of the structure of the photodiode 21 as a photoelectric conversion unit. The example of FIG.
This is a PIN diode having the simplest configuration in which a lower electrode 51, an n-type layer 52, an intrinsic photoelectric conversion layer 53, a p-type layer 54, and an upper electrode 55 are stacked on a substrate 11 in this order. The lower electrode 51 and the upper electrode 55 are made of ITO.

The n-type layer 52, the photoelectric conversion layer 53 and the p-type layer 54 are made of amorphous silicon or amorphous silicon germanium. An insulating film 56 made of silicon oxide or silicon nitride is formed on the upper electrode 55.
Is formed thereon, and a light-shielding film 57 made of aluminum is further formed thereon.

FIG. 6B shows an example in which the n-type layer 52 shown in FIG.
And a carrier injection blocking layer 58 instead of the p-type layer 54,
59 are provided. One injection blocking layer 58 has n
It is made of a type amorphous silicon nitride, and prevents injection of holes into the photoelectric conversion layer 53. The other injection blocking layer 59 is made of a p-type amorphous silicon carbide and blocks injection of electrons into the photoelectric conversion layer 53. By providing the carrier injection blocking layers 58 and 59, generation of dark current is suppressed, and a photodiode with less noise is obtained.

FIG. 6C shows an example in which the multiplication layer 6 for multiplying the electric charge generated in the photoelectric conversion layer 53 is added to the configuration of FIG.
0 is added. The multiplication layer 60 includes layers 60a to 60a.
5e is a five-layer step-back structure. Each layer 6
0a to 60e are made of amorphous silicon or amorphous silicon germanium.

FIG. 7 shows the energy band gap in this configuration. 7A shows a case where no voltage is applied, and FIG. 7B shows a case where a reverse bias voltage VPD is applied. The electrons e generated in the photoelectric conversion layer 53 are excited by new energy by the energy steps of the layers 60a to 60e while passing through the multiplication layer 60, and are multiplied. In this configuration, electrons can be multiplied by several tens of times, and a photodiode with extremely high sensitivity can be obtained.
It is necessary to apply a high electric field to the multiplication layer 60, and the circuit configuration is preferably (b) or (c) in FIG.

The n-type layer 5 shown in FIGS.
2. The photoelectric conversion layer 53, the p-type layer 54, the carrier injection blocking layers 58 and 59, and the multiplication layer 60 can all be formed using a method such as a plasma CVD method well known in the field of semiconductor technology. . The photodiode 21 receives light only from the substrate 11 side since the light-shielding film 57 is present on the back surface side.

FIG. 8 schematically shows an example of the configuration of the thin film transistor 22 which is a charge output unit. In this example, a gate electrode 61, an insulating layer 62, a channel layer 63, and an insulating layer 64 are stacked in this order on a substrate 11, an electrode connection layer 65 is provided so as to be in contact with the channel layer 63, and a source electrode 6
6 and a drain electrode 67 are provided. The gate electrode 61, the source electrode 66, and the drain electrode 67 are all made of ITO, and have translucency.

The insulating layer 62 is made of silicon nitride.
4 is made of silicon oxide. Channel layer 6
Reference numeral 3 is made of intrinsic amorphous silicon, and the electrode connection layer 65 is made of n-type amorphous silicon doped with impurities at a high concentration. These layers 62-
All 65 are light-transmitting, and the whole thin film transistor 22 is light-transmitting. Light enters the thin film transistor 22, but in this configuration, there is almost no effect of light,
No malfunction occurs.

The insulating layer 62 to the electrode connecting layer 65 can be formed by, for example, a plasma CVD method. Note that the thin film transistor 25 described with reference to FIG. 4C has the same configuration and has a light-transmitting property.

FIG. 9 shows the configuration of the capacitor 23 as a charge storage unit. The capacitor 23 is provided on the substrate 11
8, a dielectric layer 69 and an electrode 70 are sequentially laminated. The electrodes 68 and 70 are made of ITO, and the dielectric layer 69 is made of silicon oxide or silicon nitride. Therefore, the entire capacitor 23 is translucent.

The photodiode 21 inside the pixel 12
The wiring 24 connecting the thin film transistors 22, 25 and the capacitor 23 to each other is also made of ITO. Further, a wiring 38 connecting the thin film transistor 22 and the vertical scanning circuit 31, a thin film transistor 22 and a transistor 33
Are also made of ITO. Further, in the configuration shown in FIGS. 4B and 4C, the wiring for applying the voltage VPD is also made of ITO. As a result, as shown in FIG. 2, each pixel 12 is a light-transmitting region B except for the region A of the photoelectric conversion unit where the light-shielding film 57 is provided.

The transmittance in the visible light region necessary for reading an image can be designed as follows by adjusting the energy band gap and the film thickness of various semiconductor thin films to be used. The light transmittance of glass used as the substrate 11 is about 95%, and ITO used as an electrode or wiring
Has a light transmittance of about 80%. Therefore, the transmittance of the region where the wiring is provided is about 75%. The light transmittance of amorphous silicon used as the material of the thin film transistor 22 is 95% or more, and the transmittance of the region where the charge output portion is provided is 70% or more. Capacitor 2
The light transmittance of silicon oxide or silicon nitride used as the material of No. 3 is extremely high, and the transmittance of the region where the charge storage portion is provided is about 7%, calculated from the transmittance of ITO.
5% can be secured.

The resolution of the image sensor 10 is 600 dp
Assuming that the size is i, the size of the pixel 12 is about 40 × 40 μm
Becomes At this time, if the size of the photodiode 21 serving as the photoelectric change portion is about 20 × 20 μm, the area of the light-transmitting region B is about 75% of the area of the pixel 12. In consideration of the above-described transmittance, in this setting, the average of the entire pixel array area is 50% of the external light in the image to be read.
% Or more can be derived. Therefore, the image is illuminated sufficiently bright only by external light, and it is not necessary to provide an illumination device to read the image brightly. In addition, the image can be visually recognized by the user using only external light.

The ratio of the area of the light-transmitting region B to the area of the pixel 12 and the structure of the photodiode 21 may be determined in consideration of the required resolution. When the pixel 12 is made small in order to obtain high resolution and the light-transmitting region B becomes relatively small, the photodiode 21 may have a multiplication function. This makes it possible to reliably read an image brightly.

The above-mentioned various materials are merely examples, and the present invention is not limited to these, and various changes can be made. For example, the insulating layers 62 and 64 and the dielectric layer 69
In addition to silicon nitride and silicon oxide, various insulator materials and dielectric materials such as silicon carbide such as SiC can be used. Also, the wirings 24, 38, 3
9, gate electrode 61, source electrode 66, drain electrode 6
7. For the electrodes 68 and 70, various transparent conductive oxides such as SnO ₂ can be used in addition to ITO. further,
For the channel layer 63, various semiconductor materials which are not doped with impurities can be used other than the intrinsic amorphous silicon. For the electrode connection layer 65, various semiconductor materials doped with impurities can be used other than n-type amorphous silicon doped with impurities.

As shown in FIG. 1, an input / output terminal 2c is provided on a side surface of the housing 2 of the image reading apparatus 1. A part of the input / output terminal 2c is for a signal, and is connected to the interface 48 shown in FIG. Another part of the input / output terminal 2c is for a power supply.

FIG. 10 shows an example of usage of the image reading apparatus 1 having such a configuration. In the example of (a), the image reading device 1 is connected to a personal computer 71 by a cable 72. The image reading apparatus 1 receives power from the personal computer 71 and outputs image data representing the read image to the personal computer 7.
Feed to 1. Note that the signal digitized by the A / D converter 46 or the analog signal before digitization is
As a configuration for directly transmitting the image data to the personal computer 71, the personal computer 71 may generate image data. In that case, the signal processing circuit 47 can be omitted.

The example of (b) shows the personal computer 7
3, the image reading device 1 is mounted. Attachment to the personal computer 73 is performed when image data is supplied after reading the image. In this use mode, it is necessary to provide the image reading device 1 with a battery serving as a power supply. However, since there is no cable, the handling of the image reading device 1 becomes easy, and the work efficiency of the user increases.

[0047]

According to the present invention, a plurality of pixels each having a photoelectric conversion portion and a charge output portion in different regions are two-dimensionally arranged, and the region including at least the charge output portion of each pixel is entirely formed from one surface to the other surface. In the contact-type image sensor of the present invention, which is translucent throughout, the user can visually recognize an image to be read through the translucent region. Therefore, it is extremely easy to align the image sensor with the image, and a desired range of the image can be reliably read. In addition, since the image can be illuminated by external light through the translucent region, it is possible to omit an illumination device for illuminating the image or to reduce the amount of light to be small. Therefore, the image sensor is easy to use and has a simple configuration.

When the charge output portion of each pixel is formed of a semiconductor containing silicon, it is easy to make the charge output portion light-transmitting, and when the charge output portion is a thin film transistor, the light-transmitting property is enhanced.

If the area of the wiring connecting the photoelectric conversion section and the charge output section of each pixel is translucent, the translucent area is widened, making it easier to visually recognize an image and illuminate with external light. Become.

When the multiplying function is provided to the photoelectric conversion unit of each pixel, the image can be reliably read even under environmental conditions where the image cannot be brightly illuminated by external light.

If each pixel has a charge storage portion in a region different from the photoelectric conversion portion and the charge output portion, and the region of the charge storage portion of each pixel is translucent, the translucent region becomes large. Thus, visual recognition of an image and illumination by external light are further facilitated.

When the charge storage portion of each pixel is formed of a dielectric containing silicon, it is easy to make the charge storage portion translucent.

If the area of the wiring connecting the photoelectric conversion section, the charge storage section and the charge output section of each pixel is made translucent, the translucent area becomes large, and the image can be visually recognized or illuminated by external light. Becomes even easier.

A plurality of pixels having a light-transmitting region in at least a part thereof are two-dimensionally arranged so that a user can visually recognize an image to be read through the plurality of arranged pixels. With an image sensor of the type, it is very easy to align the image sensor with the image. In addition, since the image can be illuminated by external light through the translucent region, the illuminating device for illuminating the image can be omitted or reduced in size. As a result, the image sensor is easy to use and has a simple configuration.

In particular, when the average light transmittance of the entire arrangement region of a plurality of pixels is 50% or more, the visibility of the image to be read is good.

[Brief description of the drawings]

FIG. 1 is a diagram schematically illustrating an appearance of an image reading apparatus according to an embodiment of the invention.

FIG. 2 is a diagram schematically showing a cross section of an image sensor provided in the image reading device.

FIG. 3 is a diagram showing a circuit configuration for reading a signal from each pixel of the image sensor.

FIG. 4 is a diagram showing an example of a circuit configuration of each pixel of the image sensor.

FIG. 5 is a diagram schematically illustrating a circuit configuration of the entire image sensor.

FIG. 6 is a diagram schematically illustrating a configuration example of a photodiode which is a photoelectric conversion unit of the image sensor.

FIG. 7 is a diagram showing an energy band gap of the photodiode having the configuration shown in FIG.

FIG. 8 is a diagram schematically illustrating an example of a configuration of a thin film transistor which is a charge output unit of the image sensor.

FIG. 9 is a diagram showing a configuration of a capacitor which is a charge storage unit of the image sensor.

FIG. 10 is a diagram illustrating an example of a usage pattern of the image reading apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Image reading device 2 Housing 2a Housing upper surface 2b Housing lower surface 2c Input / output terminal 2d Operation key 10 Image sensor 11 Substrate 12 Pixel A Non-light-transmitting area B Light-transmitting area 21 Photodiode (photoelectric conversion part) 22 Thin-film transistor (charge output) Unit) 23 capacitor (charge storage unit) 24 wiring 25 thin film transistor 31 vertical scanning circuit 32 horizontal scanning circuit 33 transistor 34 output line 35 amplifier 36 load resistance 37 bias power supply 38 wiring 39 wiring 41 CPU 42 ROM 43 RAM 44 voltage application circuit 45 scanning Circuit 46 A / D converter 47 signal processing circuit 48 interface 51 lower electrode 52 n-type layer 53 photoelectric conversion layer 54 p-type layer 55 upper electrode 56 insulating film 57 light shielding film 58 hole injection blocking layer 59 electron injection blocking layer 60 increase Double layer 61 Over gate electrode 62 insulating layer 63 channel layer 64 insulating layer 65 electrode connecting layer 66 source electrode 67 drain electrode 68 electrode 69 dielectric layer 70 electrode 71, 73 personal computer 72 cable

Continued on the front page F-term (reference) 4M118 AA10 AB01 AB10 BA05 CB06 CB14 DA02 EA20 5C024 AX01 CX41 CY49 GX03 GX12 GX16 GY17 GY39 GY42 GZ42 GZ44 HX23 5C051 AA01 BA04 DA06 DB01 DB06 DC00 DC07 EA00 MA03 MA01 MA03

Claims (10)

[Claims] A contact type image sensor that reads an image in a state close to an image to be read, a photoelectric conversion unit that generates charges by photoelectric conversion, and a charge output unit that outputs charges generated by the photoelectric conversion unit. Having a plurality of pixels two-dimensionally arranged in different regions, wherein at least a region including a charge output portion of each pixel is translucent throughout from one surface to the other surface. . 2. The image sensor according to claim 1, wherein the charge output section of each pixel is made of a semiconductor containing silicon. 3. The image sensor according to claim 1, wherein the charge output section of each pixel is a thin film transistor. 4. The device according to claim 1, wherein a wiring region connecting the photoelectric conversion unit and the charge output unit of each pixel is translucent from one surface to the other surface. Image sensor. 5. The image sensor according to claim 1, wherein the photoelectric conversion unit of each pixel has a function of multiplying a charge generated by the photoelectric conversion. 6. A pixel according to claim 1, wherein each pixel has a charge accumulation unit for accumulating the charge generated by the photoelectric conversion unit in a region different from the photoelectric conversion unit and the charge output unit, and the region of the charge accumulation unit of each pixel has one surface. 2. The image sensor according to claim 1, wherein the image sensor is translucent throughout from the first surface to the other surface. 3. 7. The image sensor according to claim 6, wherein the charge storage portion of each pixel is made of a dielectric containing silicon. 8. A wiring region for connecting a photoelectric conversion unit, a charge storage unit, and a charge output unit of each pixel, which is translucent from one surface to the other surface. 7. The image sensor according to 6. 9. A contact-type image sensor for reading an image in a state close to an image to be read, wherein a plurality of pixels having a translucent region in at least a part thereof are two-dimensionally arranged, and a user reads the image. An image sensor characterized in that a target image can be visually recognized through a plurality of arranged pixels. 10. The average light transmittance of the entire pixel array region is 5
The image sensor according to claim 9, wherein the value is 0% or more.