JP2001291911A - Magnetoresistance effect element and magnetic storage device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem where magnetization inversion of a recording layer by a recording current magnetic field is difficult in a magnetoresistance effect element, using the conventional vertical magnetization. SOLUTION: A magnetic layer turning to a recording layer is constituted of an amorphous alloy film, composed of rare earth-transition metal which contains at least light rare earths.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a magnetoresistive element using a magnetic layer having perpendicular magnetic anisotropy and a magnetic memory using the element.

[0002]

2. Description of the Related Art A giant magnetoresistive (GMR) element or a tunnel magnetoresistive (TMR) element obtained by laminating a magnetic magnetic layer and a nonmagnetic layer is a conventional anisotropic magnetoresistance (A
Since the magnetic sensor has a large magnetoresistance change rate as compared with the MR element, high performance can be expected as a magnetic sensor.

The GMR element has already been put to practical use as a magnetic head for reproduction of a hard disk drive (HDD). On the other hand, the TMR element has a higher rate of change in magnetoresistance than the GMR element. Applications to magnetic memories are also being considered.

FIG. 11 shows an example of a basic configuration of a conventional TMR element disclosed in Japanese Patent Application Laid-Open No. 9-106514.

[0005] As shown in FIG.
, A magnetic layer 61, an insulating layer 62, a second magnetic layer 63, and an antiferromagnetic layer 64. Here, the first magnetic layer 61 and the second magnetic layer 63 are ferromagnetic materials made of Fe, Co, Ni, or an alloy thereof,
4 is FeMn, NiMn, etc., and the insulating layer 62 is made of Al
₂ O ₃ .

When the insulating layer 62 shown in FIG. 11 is replaced with a nonmagnetic layer having conductivity such as Cu, a GMR element is obtained.

In conventional GMR elements and TMR elements,
Since the magnetization of the magnetic layer portion is in the in-plane direction, when the element size is reduced as in a magnetic head having a narrow track width or a highly integrated magnetic memory, the magnetic field is strongly affected by a demagnetizing field generated at an end magnetic pole. . For this reason, the magnetization direction of the magnetic layer becomes unstable, and it becomes difficult to maintain uniform magnetization, which causes a malfunction of the magnetic head and the magnetic memory.

As a method for solving this problem, a magnetoresistive element using a magnetic layer having perpendicular magnetic anisotropy is disclosed in Japanese Unexamined Patent Publication No. Hei.
It is disclosed in Japanese Patent Application Laid-Open No. 1-213650. FIG. 12 shows an element structure disclosed in this publication.

As shown in FIG. 12, the magnetoresistive element has a first magnetic layer 71 made of a perpendicular magnetic film having a low coercive force and a second magnetic layer 71 made of a perpendicular magnetic film having a high coercive force.
The structure has a structure in which the nonmagnetic layer 72 is sandwiched between the magnetic layers 73. The first magnetic layer and the second magnetic layer have a ferrimagnetic film of a rare earth-transition element alloy, a garnet film,
Co, PdCo, or the like is used.

In this case, since the end magnetic poles are formed on the surface of the magnetic film, an increase in the demagnetizing field due to miniaturization of the element can be suppressed. Therefore, if the perpendicular magnetic anisotropy energy of the magnetic film is sufficiently larger than the demagnetizing field energy by the end pole, the magnetization can be stabilized in the vertical direction even when the element is miniaturized.

[0011]

In the above-mentioned magnetoresistive effect element, it is necessary for the magnetization in the magnetic film to overcome the influence of the demagnetizing field energy by the end pole and to stably turn in the vertical direction. It is preferable that the anisotropic energy be as large as possible, but in this case, the coercive force usually increases simultaneously. Therefore, when a conventional magnetoresistive element having a perpendicular magnetization film which is sufficiently stabilized is applied to a magnetic memory, the coercive force of the recording layer becomes too large, and the magnetization reversal is performed by a magnetic field generated by a recording current. Becomes difficult.

In order to solve the above-mentioned problems, the present invention provides a magnetoresistive element having a coercive force enough to allow magnetization reversal and capable of stably maintaining magnetization information stored in a recording layer, and a method using the same. It is an object of the present invention to provide a magnetic memory.

[0013]

The present invention achieves the above object, and a magnetoresistive element according to the present invention comprises at least a first magnetic layer, a nonmagnetic layer, and a second magnetic layer. A magnetoresistive element in which the first and second magnetic layers have perpendicular magnetic anisotropy, wherein the first magnetic layer has a low coercive force and a high magnetic anisotropic energy; It is characterized by comprising.

Further, the first magnetic layer is characterized by comprising an amorphous alloy film made of a rare earth-transition metal containing at least a light rare earth metal.

Further, the second magnetic layer is made of a ferromagnetic material having high coercive force and low saturation magnetization.

Further, the second magnetic layer is formed of an amorphous alloy film made of a rare earth-transition metal containing at least a heavy rare earth metal.

The second magnetic layer is made of a ferrimagnetic material having a compensation point near room temperature.

Further, the non-magnetic layer is made of an insulator.

Further, the first to third magnetic layers comprise at least a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second nonmagnetic layer, and a third magnetic layer. Is a magnetoresistive element having perpendicular magnetic anisotropy, wherein the second magnetic layer is made of a ferromagnetic material having low coercive force and high magnetic anisotropic energy.

Further, the magnetic memory of the present invention comprises at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer.
The first and second magnetic layers have perpendicular magnetic anisotropy;
The first magnetic layer uses a magnetoresistive element having a low coercive force and a ferromagnetic material having a high magnetic anisotropic energy.

The first to third magnetic layers comprise at least a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second nonmagnetic layer, and a third magnetic layer. Has a perpendicular magnetic anisotropy, and the second magnetic layer has a low coercive force and uses a magnetoresistive element composed of a ferromagnetic material having a high magnetic anisotropic energy. And

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings.

[Embodiment 1] FIG. 1 shows a schematic configuration diagram of a magnetoresistive element of Embodiment 1.

Referring to FIG. 1, a magnetoresistive element according to the present invention comprises a first magnetic layer 11, a non-magnetic layer 12, a second magnetic layer
3 Each of the first magnetic layer 11 and the second magnetic layer 13 is made of an amorphous alloy perpendicular magnetization film of a rare earth metal (RE) and an iron group transition metal (TM).

Assuming that the first magnetic layer 11 is a memory layer, the first magnetic layer has a magnetic anisotropy energy having a low coercive force Hc small enough to be rewritten by a write magnetic field and a magnitude sufficient to maintain perpendicular magnetic anisotropy. It is necessary to have on the other hand,
The second magnetic layer 13 has a saturation magnetization Ms so that the influence on the first magnetic layer 11 can be reduced and the second magnetic layer 13 is not affected by an external magnetic field.
Is small and the coercive force Hc is large.

Therefore, the material of the first magnetic layer 11 will be considered.

First, a crystalline material will be considered using a CoCr-based alloy as an example. Journal of the Japan Society of Applied Magnetics Vol. 2
4, no. 1, pp. 25-33 (2000)
Saturation magnetization M of CoCrTa single layer film as oCr-based alloy
s, coercive force Hc, perpendicular magnetic anisotropy energy K⊥ Ta
The composition dependency (Ta composition: 0 to 10 at.%) Is shown. According to this, within the above composition range, CoCrT
The film a maintains the perpendicular magnetic anisotropy, but the coercive force Hc shows a large value of about 800 to 2400 Oe.

Further, since the tendency between the perpendicular magnetic anisotropy energy K⊥ and the coercive force Hc is similar, when the perpendicular magnetic anisotropy energy K⊥ increases, the coercive force Hc also tends to increase. On the other hand, when the coercive force Hc is reduced, the perpendicular magnetic anisotropy energy K⊥ is also reduced.

Next, a rare earth-transition metal amorphous alloy containing heavy rare earths will be considered by taking a TbCo alloy as an example. Journal of the Japan Society of Applied Magnetics Vol. 10, No. 2, pp. 179
182 (1996) shows the Tb composition dependence of the saturation magnetization Ms, coercive force Hc, and magnetic anisotropy energy Ku of a TbCo single layer film. According to this, the TbCo alloy has a Tb composition of 13 to 31 atomic% in which the perpendicular magnetization film is formed, but the coercive force in the Tb composition range in which the TbCo alloy maintains the perpendicular magnetic anisotropy is as large as 3 kOe or more. turn into.

As described above, in the perpendicular magnetization film of a crystalline alloy such as TbCo or CoCr or a rare earth-transition metal amorphous alloy containing heavy rare earth, the perpendicular magnetic anisotropy energy K suitable for the memory layer of the present invention is obtained. In order to maintain ⊥, the coercive force Hc increases. On the other hand, in order to reach the desired coercive force Hc, the perpendicular magnetic anisotropy energy K⊥ is also reduced, and the perpendicular magnetic anisotropy cannot be satisfied.

Next, a PrCo amorphous alloy or TbPrCo
A rare earth-transition metal amorphous alloy containing light rare earths will be considered taking an amorphous alloy as an example. FIG. 2 shows the composition dependency of the coercive force Hc of the PrCo amorphous alloy film. The coercive force Hc of the PrCo amorphous alloy film hardly depends on the Pr composition.
Oe, which is a value that can be sufficiently reversed by a recording current magnetic field in a magnetic memory. FIG. 3 shows the Pr composition dependency of the perpendicular magnetic anisotropy energy KＰ of the PrCo amorphous alloy film. The perpendicular magnetic anisotropy energy K⊥ is a value obtained by subtracting the demagnetizing field energy 2πMs ² from the intrinsic perpendicular magnetic anisotropy energy Ku of the PrCo amorphous alloy film. When the value is taken, the magnetization of the PrCo amorphous alloy film becomes stable in the vertical direction. Therefore, Pr
When the composition is about 20 atomic% or more, a perpendicular magnetization film is formed.
When the r composition is in the range of about 20 to 30 atomic%, a large value of perpendicular magnetic anisotropy energy K⊥ is obtained, and it can be seen that a stable perpendicular magnetic film is obtained.

FIG. 4 shows the RE composition dependency of the coercive force Hc of the TbPrCo amorphous alloy film. FIG. 5 shows TbPrC
RE of perpendicular magnetic anisotropy energy K⊥ of amorphous alloy film
Shows composition dependence. In addition, Tb in rare earth element (RE)
And the relative composition ratio of Pr is around Tb: Pr = 1: 1.
Since the first magnetic layer 11 needs to have a coercive force Hc that can be sufficiently reversed by a recording current magnetic field in a magnetic memory, the rare earth (RE) composition is 15 atomic% or less or 35 atomic% or more from FIG. Becomes On the other hand, the perpendicular magnetic anisotropy energy K⊥ shows a positive value in the composition range shown in FIG. 5, and it can be seen that a stable perpendicular magnetization film is obtained particularly in the range of 10 to 30 at%. .

Therefore, as a material suitable for the first magnetic layer 11, a binary alloy (PrFe, PrCo, etc.) containing at least a rare earth metal such as Pr as a rare earth metal, or a ternary alloy (PrGdFe, PrGdCo,
PrTbFe, PrTbCo, PrFeCo).

On the other hand, since it is known that the coercive force increases when a heavy rare earth metal is contained, the material suitable for the second magnetic layer 13 is mainly Tb or Gb as a rare earth metal.
d containing binary alloys containing heavy rare earth metals (TbFe, TbFe
bCo, GdFe, GdCo, etc.) or a ternary alloy (GdTbFe, GdTbCo, TbFeCo, etc.).

In particular, since a magnetic field generator such as an electromagnet can be used for initialization as the second magnetic layer 13, considering the stability, the coercive force Hc and the perpendicular magnetic anisotropic energy K
⊥ is preferably as large as possible. Therefore, TbPrC
When an amorphous alloy film is used, it is understood from FIGS. 4 and 5 that a film having an RE composition of 18 to 32 atomic% is preferable.

When a RE-TM material having a composition near the compensation point is selected as the second magnetic layer 13, the saturation magnetization M
s almost disappears, and the influence on the first magnetic layer 11 can be avoided. Also, since it is a ferrimagnetic material, the magnetization of each of the RE and TM sublattices maintains a sufficient magnitude, and since the magnetoresistance effect is considered to mainly depend on TM, the saturation magnetization Ms disappears. Even in the composition near the compensation point, a sufficiently large magnetoresistance effect can be obtained.

When the magnetoresistive element is applied to a magnetic memory, the composition near the compensation point is selected as the second magnetic layer 13, so that the coercive force Hc becomes very large. The initialization can be easily performed by applying a magnetic field while heating.

As the non-magnetic layer 12, a conductive non-magnetic layer such as Cu used in a conventional GMR element may be used, or an insulating Al ₂ O ₃ used in a conventional TMR element may be used. A membrane can also be used.

However, when an oxide film is used as the nonmagnetic layer, there is a risk that the rare earth metal used in the magnetic layer may be oxidized.
It is preferable to use a nitride film such as AlN or BN, or an insulating film having a covalent bond such as Si, diamond, DLC (diamond-like carbon), or the like.

First magnetic layer 11 and second magnetic layer 13
Is that if the thickness of the magnetic layer becomes too thin, it becomes superparamagnetic due to the influence of thermal energy.
This is necessary. If the film thickness is too large, it becomes difficult to process a fine element. Therefore, the thickness of the magnetic layer is preferably 5000 ° or less.

In the case of a TMR element, if the thickness of the non-magnetic layer 12 is less than 5 °, there is a possibility that an electrical short-circuit will occur between the magnetic layers. If the thickness is 30 ° or more, electron tunneling is unlikely to occur, so the thickness is preferably 5 ° or more and 30 ° or less.
On the other hand, in the case of the GMR element, when the thickness of the nonmagnetic layer 12 is large, the element resistance becomes too small, and the magnetoresistance ratio is also reduced.

It is clear that the material of the second magnetic layer 13 is not limited to the RE-TM material of the above embodiment, but may be any other material.

[Embodiment 2] FIG. 6 shows a schematic configuration diagram of a magnetoresistive element of Embodiment 2.

In FIG. 6, the magnetoresistive element of the present invention comprises a first magnetic layer 21, a first nonmagnetic layer 22, a second magnetic layer 23, a second nonmagnetic layer 24, a third magnetic layer. It is composed of a layer 25. Each of the first magnetic layer 21, the second magnetic layer 23, and the third magnetic layer 25 is a ferromagnetic material made of an amorphous alloy perpendicular magnetization film of a rare earth metal (RE) and an iron group transition metal (TM). That is, it is made of a ferrimagnetic material.

When the second magnetic layer 23 is a memory layer, the second magnetic layer 23 has a low coercive force Hc enough to be rewritten by a write magnetic field and a perpendicular magnetic anisotropy enough to maintain the perpendicular magnetic anisotropy. It is necessary to have energy K⊥.
On the other hand, the first magnetic layer 21 and the third magnetic layer 25
The saturation magnetization Ms is small and the coercive force Hc is set so as to reduce the influence of the magnetic layer 23 on the magnetic layer 23 and not to be affected by the external magnetic field.
Is desirable.

Therefore, as described in the first embodiment, the material suitable for the second magnetic layer 23 serving as the memory layer is as follows.
Binary alloys (PrFe, PrCo, etc.) or ternary alloys (PrGdFe, PrGdCo, PrTbFe, etc.) containing at least a light rare earth metal such as Pr as a rare earth metal
PrTbCo, PrFeCo). Materials suitable for the first magnetic layer 21 and the third magnetic layer 25 include binary alloys (TbFe, TbC) mainly containing heavy rare earth metals such as Tb and Gd as rare earth metals.
o, GdFe, GdCo, etc.) or a ternary alloy (Gd
TbFe, GdTbCo, PrTbCo, TbFeCo
Etc.).

Therefore, PrCo is used as the second magnetic layer 23.
Using an amorphous alloy, PrTbC is used as the second magnetic layer 23.
A case where an amorphous alloy is used will be described.

FIG. 7 shows the Pr composition dependency of the coercive force Hc of a PrCo amorphous alloy at room temperature. The coercive force Hc of the PrCo amorphous alloy shows a constant value of 100 Oe in the entire Pr composition range, and the magnetization can be reversed by the magnetic field generated by the recording current. FIG. 8 shows the Pr composition dependency of the perpendicular magnetic anisotropy energy K⊥ of a PrCo amorphous alloy at room temperature.
The perpendicular magnetic anisotropy energy K⊥ is a value obtained by subtracting the demagnetizing field energy 2πMs ² from the intrinsic perpendicular magnetic anisotropy energy Ku of the PrCo amorphous alloy film, and the perpendicular magnetic anisotropy energy K⊥ is positive. When the value of is taken, the magnetization of the PrCo amorphous alloy film becomes stable in the vertical direction. Therefore, when the Pr composition is about 20 atomic% or more, a perpendicular magnetization film is formed.
When the composition is in the range of about 20 to 30 atomic%, a large value of K⊥ is obtained, and it can be seen that a stable perpendicular magnetization film is obtained.

FIG. 9 shows the dependence of the coercive force Hc of the PrTbCo amorphous alloy at room temperature on the rare earth metal (RE) composition. FIG. 10 shows the perpendicular magnetic anisotropy energy K⊥ of the PrTbCo amorphous alloy at room temperature. Rare earth metals (RE)
Shows composition dependence. FIG. 9 shows that the magnitude of the coercive force Hc at which the magnetization of the magnetic layer is not reversed with respect to the external magnetic field is 800
If Oe, the above condition is satisfied when the RE composition is 18 to 33 atomic%. On the other hand, from FIG. 10, the perpendicular magnetic anisotropy energy K⊥ shows a positive value in any of the composition ranges shown in FIG. It turns out that it becomes.

In order to reduce the influence of the leakage magnetic field from the high coercive force material (first magnetic layer 21 and third magnetic layer 25) to the low coercive force material (second magnetic layer 23), For the magnetic layer 21 and the third magnetic layer 25, an RE-TM material having a compensation point near room temperature can be used.
In this case, the saturation magnetization Ms almost disappears near the compensation point, but since it is a ferrimagnetic material, the magnetizations of the RE and TM sublattices maintain a sufficient magnitude. Also,
Since the magnetoresistance effect is considered to mainly depend on TM, a sufficiently large magnetoresistance effect can be obtained even in the composition near the compensation point where the saturation magnetization Ms disappears.

When the composition near the compensation point is selected as the first and third magnetic layers, the coercive force Hc becomes very large. However, by applying a magnetic field while heating to near the Curie point, the initial magnetic field can be easily increased. Can be

As the non-magnetic layer, a non-magnetic layer having conductivity such as Cu used in a conventional GMR element or an Al ₂ O ₃ film used in a conventional TMR element can be used. However, using an insulating layer as the first and second nonmagnetic layers can provide a larger magnetoresistance change rate.

When an oxide film is used as the nonmagnetic layer, the rare earth metal used for the magnetic layer may be oxidized.
It is preferable to use a nitride film such as N or BN, or an insulating film having a covalent bond such as Si, diamond, or DLC (diamond-like carbon).

If the magnetic layer is too thin, it becomes superparamagnetic due to the influence of thermal energy. Therefore, the thickness of the magnetic layer must be 50 ° or more. If the thickness is too thick, a fine element is processed. Therefore, the thickness of the magnetic layer should be 5
It is preferably less than 000 °.

In the case of a TMR element, if the thickness of the non-magnetic layer is less than 5 °, there is a possibility of an electrical short between the magnetic layers, and the thickness is more than 30 °. In this case, the tunneling phenomenon of electrons is unlikely to occur, so that the angle is preferably 5 ° to 30 °. On the other hand, in the case of a GMR element, when the film thickness is large, the element resistance becomes too small, and the magnetoresistance ratio is also reduced.

In the above description, the ferrimagnetic RE-TM alloy is used as the magnetic layer. However, a normal ferromagnetic material having perpendicular magnetic anisotropy such as CoCr and CoPt can be used.

In the magnetoresistive element having the above structure, a multi-value memory can be realized by using ferrimagnetic materials having different coercive forces as the first, second and third magnetic layers.

The magnetoresistance effect element of the second embodiment can obtain an MR ratio approximately twice that of the magnetoresistance effect element of the first embodiment.

[0059]

As described above, according to the present invention, a magnetoresistive effect element having a coercive force enough to enable magnetization reversal and capable of stably maintaining magnetization information stored in a recording layer, and a magnetoresistive element having the same. The used magnetic memory can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a magnetoresistive element according to a first embodiment.

FIG. 2 is a diagram showing the dependence of the coercive force Hc of a PrCo alloy on the Pr composition.

FIG. 3 shows perpendicular magnetic anisotropy energy K⊥ of a PrCo alloy.
FIG. 4 is a diagram showing the Pr composition dependence of the present invention.

FIG. 4 is a diagram showing the dependence of the coercive force Hc of a TbPrCo alloy on the RE composition.

FIG. 5 is a diagram showing the dependence of perpendicular magnetic anisotropy energy K⊥ of a TbPrCo alloy on RE composition.

FIG. 6 is a schematic configuration diagram of a magnetoresistive element according to a second embodiment.

FIG. 7 is a diagram showing the dependence of the coercive force Hc of a PrCo alloy on the Pr composition.

FIG. 8 shows perpendicular magnetic anisotropy energy K⊥ of a PrCo alloy.
FIG. 4 is a diagram showing the Pr composition dependence of the present invention.

FIG. 9 is a diagram showing the dependence of the coercive force Hc of a TbPrCo alloy on the RE composition.

FIG. 10 is a graph showing the dependence of perpendicular magnetic anisotropy energy K⊥ of a TbPrCo alloy on RE composition.

FIG. 11 is a basic schematic configuration diagram of a conventional TMR element.

FIG. 12 is a schematic configuration diagram of a conventional magnetoresistance effect element using perpendicular magnetization.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 1st magnetic layer 12 non-magnetic layer 13 2nd magnetic layer 21 1st magnetic layer 22 1st non-magnetic layer 23 2nd magnetic layer 24 2nd non-magnetic layer 25 3rd magnetic layer 61st No. 1 magnetic layer 62 Nonmagnetic layer 63 Second magnetic layer 64 Antiferromagnetic layer 71 First magnetic layer 72 Nonmagnetic layer 73 Second magnetic layer

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kazuji Minami 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka F-term (reference) 5D034 BA03 BA05 BA15 CA08

Claims (9)

[Claims] 1. A magnetoresistive element comprising at least a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, wherein the first and second magnetic layers have perpendicular magnetic anisotropy. A magnetoresistive element, wherein the magnetic layer has a low coercive force and is made of a ferromagnetic material having high magnetic anisotropic energy. 2. The magnetoresistive element according to claim 1, wherein the first magnetic layer is formed of an amorphous alloy film made of a rare earth-transition metal containing at least a light rare earth metal. 3. The magnetoresistive element according to claim 1, wherein said second magnetic layer has a high coercive force and is made of a ferromagnetic material having a low saturation magnetization. 4. The magnetoresistive element according to claim 3, wherein said second magnetic layer is formed of an amorphous alloy film made of a rare earth-transition metal containing at least a heavy rare earth metal. 5. The magnetoresistive element according to claim 1, wherein said second magnetic layer is made of a ferrimagnetic material having a compensation point near room temperature. 6. The magnetoresistive element according to claim 1, wherein said nonmagnetic layer is made of an insulator. 7. The first to third magnetic layers, comprising at least a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second nonmagnetic layer, and a third magnetic layer. Wherein the second magnetic layer has a low coercive force and is made of a ferromagnetic material having a high magnetic anisotropic energy. Resistance effect element. 8. The first magnetic layer, comprising at least a first magnetic layer, a non-magnetic layer, and a second magnetic layer, wherein the first and second magnetic layers have perpendicular magnetic anisotropy. Is a magnetic memory using a magnetoresistive element having a low coercive force and made of a ferromagnetic material having high magnetic anisotropic energy. 9. The first to third magnetic layers, comprising at least a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second nonmagnetic layer, and a third magnetic layer. Has a perpendicular magnetic anisotropy, and the second magnetic layer has a low coercive force and uses a magnetoresistive element composed of a ferromagnetic material having a high magnetic anisotropic energy. Magnetic memory.