JP2001291681A5 - - Google Patents
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- JP2001291681A5 JP2001291681A5 JP2001024659A JP2001024659A JP2001291681A5 JP 2001291681 A5 JP2001291681 A5 JP 2001291681A5 JP 2001024659 A JP2001024659 A JP 2001024659A JP 2001024659 A JP2001024659 A JP 2001024659A JP 2001291681 A5 JP2001291681 A5 JP 2001291681A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001024659A JP4637376B2 (ja) | 2000-02-02 | 2001-01-31 | レーザ照射装置及び半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000024615 | 2000-02-02 | ||
| JP2000-24615 | 2000-02-02 | ||
| JP2001024659A JP4637376B2 (ja) | 2000-02-02 | 2001-01-31 | レーザ照射装置及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001291681A JP2001291681A (ja) | 2001-10-19 |
| JP2001291681A5 true JP2001291681A5 (ja) | 2007-12-06 |
| JP4637376B2 JP4637376B2 (ja) | 2011-02-23 |
Family
ID=26584672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001024659A Expired - Fee Related JP4637376B2 (ja) | 2000-02-02 | 2001-01-31 | レーザ照射装置及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4637376B2 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3973882B2 (ja) | 2001-11-26 | 2007-09-12 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
| EP1400832B1 (en) | 2002-09-19 | 2014-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device |
| US7327916B2 (en) | 2003-03-11 | 2008-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device |
| SG137674A1 (en) | 2003-04-24 | 2007-12-28 | Semiconductor Energy Lab | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| US7245802B2 (en) | 2003-08-04 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device |
| US7169630B2 (en) | 2003-09-30 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
| EP1708008B1 (en) | 2005-04-01 | 2011-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradition apparatus |
| KR101611999B1 (ko) * | 2010-02-04 | 2016-04-14 | 삼성디스플레이 주식회사 | 접착제, 접착제를 갖는 표시 장치, 표시 장치의 제조 방법 및 본딩 장치 |
| JP6711333B2 (ja) | 2017-08-16 | 2020-06-17 | 日亜化学工業株式会社 | 発光装置 |
| JP7041372B2 (ja) * | 2020-05-27 | 2022-03-24 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384788A (ja) * | 1986-09-29 | 1988-04-15 | Nippon Steel Corp | レ−ザビ−ムの照射制御方法および装置 |
| JPH02187294A (ja) * | 1989-01-13 | 1990-07-23 | Nec Corp | レーザビーム整形装置 |
| JP3623818B2 (ja) * | 1995-03-02 | 2005-02-23 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法 |
| JP2001244213A (ja) * | 1999-12-24 | 2001-09-07 | Semiconductor Energy Lab Co Ltd | レーザ照射装置並びに半導体装置の作製方法 |
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2001
- 2001-01-31 JP JP2001024659A patent/JP4637376B2/ja not_active Expired - Fee Related