JP2001285112A - Mobile object communication equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide mobile object communication equipment a radio part of which can be miniaturized. SOLUTION: An antenna switch part 10 is provided with a multilayer substrate 11 incorporating a directional coupler CPL and a band pass filter BPF 1. A bear chip-like GaAs switch SW is mounted on the multilayer 11 and resin 12 is applied on the upper face of the multilayer substrate 11 so that it covers the GaAs switch SW. Five each of outer terminals T, twenty terminals in total, are formed on each sides, form the side of the multilayer substrate 11 to the lower face. Ground terminals (not illustrated) are formed on the lower face of the multilayer substrate 11. Namely, the directional coupler CPL and the band pass filter BPF 1, which are constituted of passive parts, are incorporated in the multilayer substrate 11 and the GaAs switch SW constituted of active parts is loaded on the multilayer substrate 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mobile communication device, and more particularly, to a mobile communication device in which a radio section for processing an analog signal has a multilayer substrate.

[0002]

2. Description of the Related Art Currently, PDCs using 800 MHz band and 1.5 GHz band are used as mobile communication devices in Japan.
(Personal Digital Cellular) type mobile phones have been proposed.

FIG. 9 is a block diagram of a radio unit in a general PDC type portable telephone. JP-A-9-284
As disclosed in Japanese Patent Publication No. 168/168, etc., a radio section in a PDC mobile phone includes an antenna 1, an antenna switch section 2, a transmission side amplification section 3, a transmission side frequency conversion section 4, a first reception side frequency. It comprises a conversion unit 5, a second reception-side frequency conversion unit 6, a PLL synthesizer unit 7, and a baseband unit 8.

[0004] The antenna switch unit 2 includes a GaAs switch SW for switching between the transmission unit Tx and the reception unit Rx, a directional coupler CPL for transmitting a part of a transmission signal to an automatic gain control unit (not shown), and a reception signal. Through a band-pass filter BPF1. The transmission-side amplifier 3 includes a power amplifier PA for amplifying a transmission signal and a band-pass filter BPF2 for transmitting the transmission signal. The transmission-side frequency conversion unit 4 amplifies a local oscillation signal from the local oscillator LO2 and a quadrature modulator PSK that generates an intermediate frequency signal for transmission from the IQ signal from the baseband unit 8 and the oscillation signal from the fixed oscillator LO1. A buffer amplifier BA1, a mixer MI that mixes an input transmission intermediate frequency signal and a local oscillation signal from a local oscillator LO2 and outputs a transmission signal.
X1, and a band-pass filter B for transmitting the transmission signal
It consists of PF3. The first receiving-side frequency converter 5 includes a low-noise amplifier LNA1 for amplifying a received signal, a band-pass filter BPF4 for passing the received signal, and a local oscillator L.
Buffer amplifier BA for amplifying local oscillation signal from O2
2, and a mixer MIX2 that mixes the input received signal and the local oscillation signal from the local oscillator LO2 and outputs a first intermediate frequency signal for reception. The second receiving-side frequency converter 6 includes an amplifier A that amplifies the first intermediate frequency signal for reception.
MP1, a multiplier MU for multiplying the oscillation signal from the crystal oscillator TCXO by N, a mixer for mixing the input first intermediate frequency signal for reception and the signal from the multiplier MU and outputting a second intermediate frequency signal for reception MIX3 and an amplifier AMP2 for amplifying the second intermediate frequency signal for reception. The PLL synthesizer unit 7 includes a local oscillator LO that generates a local oscillation signal.
2. It comprises a PLL circuit PLL for controlling the local oscillator LO2 and a crystal oscillator TCXO for generating an oscillation signal.
Note that the baseband unit 8 converts transmission data such as voice into an IQ signal, and converts the second intermediate frequency signal for reception into voice data or the like.

[0005]

However, according to the portable telephone which is one of the above-mentioned conventional mobile communication devices, an antenna constituting a radio section, an antenna switch section, a transmitting side amplifying section, a transmitting side frequency conversion section. Unit, receiving side frequency conversion unit, PL
Since the L synthesizer section and the baseband section are formed by mounting one discrete component on the circuit board, the circuit board becomes larger due to an increase in the number of components and a corresponding increase in the mounting area. As a result, there is a problem that the size of the mobile phone (mobile communication device) increases.

The present invention has been made to solve such a problem, and an object of the present invention is to provide a mobile communication device capable of reducing the size of a radio unit.

[0007]

In order to solve the above-mentioned problems, a mobile communication apparatus according to the present invention comprises a multi-layer substrate in which a radio section for processing an analog signal is formed by laminating a plurality of ceramic dielectric layers. It is characterized by having.

In the mobile communication device according to the present invention, passive components constituting the radio section are built in the multilayer board, and active components are mounted on the multilayer board.

Further, in the mobile communication device of the present invention, the radio section includes a GaAs switch for switching between transmission and reception, a high-frequency filter for passing a reception signal, a high-frequency filter or a directional coupler for passing a transmission signal. An antenna switch unit comprising:

Further, in the mobile communication device according to the present invention, the radio section includes a quadrature modulator for converting an oscillation signal from a fixed oscillator into an intermediate frequency signal for transmission, and a buffer for amplifying a local oscillation signal from a local oscillator. An amplifier, a mixer that mixes the input transmission intermediate frequency signal and the local oscillation signal and outputs a transmission signal, and a transmission-side frequency conversion unit that includes a high-frequency filter that passes the transmission signal. Features.

Further, in the mobile communication device according to the present invention, the radio section includes a low-noise amplifier for amplifying a received signal, a high-frequency filter for passing the received signal, and a buffer amplifier for amplifying a local oscillation signal from a local oscillator. And a mixer that mixes the input received signal and the local oscillation signal to output an intermediate frequency signal for reception.

According to the mobile communication device of the present invention, since the radio section includes the multi-layer substrate formed by laminating a plurality of dielectric layers, the antenna constituting the radio section, the antenna switch section, and the transmission side amplifier are constituted. Each connection among the section, the transmission-side frequency conversion section, the reception-side frequency conversion section, the PLL synthesizer section, the baseband section, and the like can be performed inside the multilayer substrate.

[0013]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a partially cutaway perspective view showing an appearance of an antenna switch unit constituting a radio unit of a mobile communication device of the present invention. The antenna switch unit 10 corresponding to the antenna switch unit 2 having the circuit configuration shown in FIG. 9 includes a directional coupler CPL (not shown) and a high-frequency filter L
A multilayer substrate 11 having a band-pass filter BPF1 (not shown) made of a C filter is provided.

A GaAs switch SW in the form of a bare chip is mounted on the multilayer substrate 11, and a resin 12 is covered on the upper surface of the multilayer substrate 11 so as to cover the GaAs switch SW. Further, from the side surface to the lower surface of the multilayer substrate 11,
A total of 20 external terminals T are formed on each side surface, and a total of 20 external terminals T are formed on the lower surface of the multilayer substrate 11.

That is, in the antenna switch section 10, the directional coupler CPL and the bandpass filter BPF1 composed of passive components are built in the multilayer substrate 11, and the GaAs switch SW composed of active components is mounted on the multilayer substrate 11. It has been configured.

FIG. 2 is a circuit diagram of (a) a directional coupler and (b) a band-pass filter built in a multilayer substrate. The directional coupler CPL includes a main line SL1 and a sub line S
L2.

The band-pass filter BPF1 includes inductors L1 and L2 and capacitors C1 to C5. A parallel resonance circuit including a capacitor C1, an inductor L1, and a capacitor C2 is connected in series between one terminal and the ground, and a parallel resonance circuit including a capacitor C3, an inductor L2, and a capacitor C4 is connected between the other terminal and the ground. A resonance circuit is connected in series. Further, a capacitor C5 is connected between one terminal and the other terminal. At this time, the inductors L1 and L2 are M-coupled.

FIGS. 3 (a) to 3 (h) and FIGS. 4 (a) to 4 (a)
FIG. 4F is a top view and a bottom view of each dielectric layer constituting the multilayer substrate of the antenna switch unit in FIG. The multilayer substrate 11 is formed by sequentially laminating first to thirteenth dielectric layers 11a to 11m made of ceramics having barium oxide, aluminum oxide, and silica as main components and having a relative dielectric constant of about 6, and having a temperature of 1000 ° C. or lower. It is formed by firing at a firing temperature.

GaAs is formed on the upper surface of the first dielectric layer 11a.
A land La1 for mounting the s switch SW is formed. Ground electrodes Gp11 to Gp14 are formed on the upper surfaces of the second, fourth, tenth, and thirteenth dielectric layers 11b, 11d, 11j, and 11m, respectively.

Further, strip line electrodes Sp11 to Sp14 are formed on the upper surfaces of the third, eleventh and twelfth dielectric layers 11c, 11k and 11l, respectively. Also,
Capacitor electrodes Cp11 to Cp19 are formed on the upper surfaces of the fifth to ninth dielectric layers 11e to 11i, respectively. Further, an external terminal T and a ground terminal TG are formed on the lower surface of the thirteenth dielectric layer 11m (labeled 11mu in FIG. 4F).

The strip line electrodes Sp11 to S11
The p14, the capacitor electrodes Cp11 to Cp19, the ground electrodes Gp11 to Gp14, the land La1, the external terminal T, and the ground terminal TG are appropriately connected by a via hole electrode Vh1 formed in each dielectric layer.

The main line SL of the directional coupler CPL
Reference numeral 1 denotes a strip line electrode Sp14, and sub line SL2 includes a strip line electrode Sp13. The inductors L1 and L2 of the band-pass filter BPF1 are composed of stripline electrodes Sp11 and Sp12, and the capacitor C1 is composed of capacitor electrodes Cp11, Cp13 and Cp.
16, Cp18, the capacitor C2 is the capacitor electrode C
Between p11 and Cp18 and the ground electrodes Gp12 and Gp13, the capacitor C3 is connected to the capacitor electrodes Cp12 and Cp1.
4, Cp17 and Cp19, the capacitor C4 is connected to the capacitor electrodes Cp12 and Cp19 and the ground electrodes Gp12 and Gp12.
With p13, the capacitor C5 is connected to the capacitor electrode Cp1.
3, Cp15 and Cp17.

With the above-described configuration, the multilayer substrate 11 including the directional coupler CPL and the band-pass filter BPF1 constituting the antenna switch unit 10 of FIG. 1 is formed. The GaAs switch SW is provided on the multilayer substrate 11.
Is mounted and covered with a resin 12, thereby completing the antenna switch unit 10 as shown in FIG.

FIG. 5 is a partially cutaway perspective view showing the appearance of the transmission-side frequency converter constituting the radio section of the mobile communication device of the present invention. The transmission-side frequency conversion unit 20 corresponding to the transmission-side frequency conversion unit 4 having the circuit configuration illustrated in FIG. 9 includes a band-pass filter B including an LC filter that is a high-frequency filter.
A multilayer substrate 21 having a built-in PF3 (not shown) is provided.

The quadrature modulator PS is provided on the multilayer substrate 21.
K, a bare chip SI-IC 22 in which the buffer amplifier BA1 and the mixer MIX1 are integrated are mounted, and a resin 23 is covered on the upper surface of the multilayer substrate 21 so as to cover the SI-IC 22. Further, a total of 20 external terminals T are formed on each side from the side surface to the lower surface of the multilayer substrate 21, and a ground terminal (not shown) is formed on the lower surface of the multilayer substrate 21.
Is formed.

The circuit of the bandpass filter BPF3 built in the multilayer substrate 21 is the same as the circuit of the bandpass filter BPF1 shown in FIG.

FIGS. 6A to 6H and FIGS.
FIG. 7C is a top view and a bottom view of each dielectric layer constituting the multilayer substrate of the transmission-side frequency conversion unit in FIG. The multilayer substrate 21 is formed by sequentially laminating first to tenth dielectric layers 21a to 21j made of ceramic having a relative dielectric constant of about 6 and containing barium oxide, aluminum oxide, and silica as main components. It is formed by firing at a firing temperature.

On the upper surface of the first dielectric layer 21a, an SI-
A land La2 for mounting the IC 22 is formed.
In addition, the second, fourth and tenth dielectric layers 21b, 21
ground electrodes Gp21 to Gp23
Are respectively formed.

Further, strip line electrodes Sp21 and Sp22 are formed on the upper surface of the third dielectric layer 21c. Capacitor electrodes Cp21 to Cp29 are formed on the upper surfaces of the fifth to ninth dielectric layers 21e to 21i, respectively. Further, the lower surface of the tenth dielectric layer 21j (FIG. 7)
In (c), an external terminal T and a ground terminal TG are formed.

It should be noted that the strip line electrodes Sp21, S
The p22, the capacitor electrodes Cp21 to Cp29, the ground electrodes Gp21 to Gp23, the land La2, the external terminal T, and the ground terminal TG are appropriately connected by via hole electrodes Vh2 formed in each dielectric layer.

The inductors L1 and L2 of the bandpass filter BPF3 are connected to the strip line electrodes Sp21 and Sp21.
Sp22 and ground electrodes Gp21 and Gp22, and the capacitor C1 is connected to the capacitor electrodes Cp21 and Cp2.
3, Cp26 and Cp28, and the capacitor C2 is composed of the capacitor electrodes Cp21 and Cp28 and the ground electrodes Gp22 and Gp22.
p23, the capacitor C3 is connected to the capacitor electrode Cp2.
2, Cp24, Cp27, Cp29 and a capacitor C4
Are the capacitor electrodes Cp22 and Cp29 and the ground electrode G
p22 and Gp23, and the capacitor C5 is composed of capacitor electrodes Cp23, Cp25 and Cp27, respectively.

With the above configuration, a multilayer substrate 21 having a built-in band-pass filter BPF3 constituting the transmission-side frequency converter 20 shown in FIG. 5 is formed. Then, the SI-IC 22 is mounted on the multilayer substrate 21 and covered with the resin 23, whereby the transmission-side frequency converter 20 as shown in FIG. 5 is completed.

FIG. 8 is a partially cutaway perspective view showing the appearance of the receiving-side frequency converter constituting the radio section of the mobile communication device of the present invention. The reception-side frequency conversion unit 30 corresponding to the first reception-side frequency conversion unit 5 having the circuit configuration illustrated in FIG. 9 is a multilayer having a built-in band-pass filter BPF4 (not shown) including an LC filter that is a high-frequency filter. A substrate 31 is provided.

Then, a GaAs MMIC 32 in the form of a bare chip in which a low noise amplifier LNA, a buffer amplifier BA2 and a mixer MIX2 are integrated is mounted on the multilayer substrate 31, and a resin 33 is covered on the upper surface of the multilayer substrate 31 so as to cover the GaAs MMIC 32. In addition, from the side surface to the lower surface of the multilayer substrate 31, a total of 20 external terminals T are formed on each side surface, five in total, and a ground terminal (not shown) is formed on the lower surface of the multilayer substrate 31.

The circuit of the bandpass filter BPF4 built in the multilayer substrate 31 is the same as the circuit of the bandpass filter BPF1 shown in FIG. 2B, like the bandpass filter BPF3 described above.

Therefore, the internal structure of the multilayer substrate 31 is the same as that of the multilayer substrate 21 of the receiving-side frequency converter (FIG. 5) shown in FIGS.
The receiving-side frequency converter 30 as shown in FIG. 8 is completed by mounting the C32 and covering with the resin 33.

According to the mobile communication apparatus of the above-described embodiment, the antenna switch unit, the transmission-side frequency conversion unit, or the reception-side frequency conversion unit that constitutes the radio unit is a multilayer substrate in which a plurality of dielectric layers are stacked. Therefore, each connection between the antenna constituting the radio section, the antenna switch section, the transmission side amplification section, the transmission side frequency conversion section, the reception side frequency conversion section, the PLL synthesizer section, the baseband section and the like is formed inside the multilayer substrate. Can do it. Therefore, the size of the wireless unit of the mobile communication device can be reduced, and the size of the mobile communication device including the wireless unit can be reduced.

Further, since the antenna switch section, the transmission-side frequency conversion section, or the reception-side frequency conversion section constituting the radio section includes a multi-layer substrate formed by laminating a plurality of dielectric layers, the active component constituting each section and The matching adjustment between the passive components is facilitated, and a matching circuit for performing the matching adjustment between them becomes unnecessary. Therefore, it is possible to reduce the size of each unit constituting the wireless unit.

Further, since the antenna switch section, the transmission-side frequency conversion section, or the reception-side frequency conversion section constituting the radio section includes a multi-layer substrate formed by laminating a plurality of dielectric layers, an active component constituting each section and Loss due to wiring between passive components can be improved. Therefore, as it becomes possible to improve the loss of each part constituting the radio unit, it is possible to simultaneously improve the performance of a mobile communication device including the radio unit.

In the above embodiment, the case where the antenna switch unit, the transmission-side frequency conversion unit, and the reception-side frequency conversion unit that constitute the radio unit of the mobile communication device are formed on separate multilayer boards has been described. However, the antenna constituting the radio unit of the mobile communication device, the antenna switch unit, the transmission-side amplification unit, the transmission-side frequency conversion unit, the reception-side frequency conversion unit,
It is sufficient that at least one of the PLL synthesizer section and the baseband section is formed on a multilayer substrate, and a plurality of components are collectively formed on one multilayer substrate. For example, an antenna, an antenna switch section, a transmission side amplification section, a transmission side The same effect can be obtained even if all of the frequency conversion unit, the reception-side frequency conversion unit, the PLL synthesizer unit, and the baseband unit are formed on a single multilayer substrate.

[0041]

According to the mobile communication device of the present invention, since the radio section for processing analog signals is provided with a multilayer substrate formed by laminating a plurality of dielectric layers made of ceramics, each section constituting the radio section is provided. Can be made inside the multilayer substrate. Therefore, the size of the wireless unit of the mobile communication device can be reduced, and the size of the mobile communication device including the wireless unit can be reduced.

Further, a radio unit for processing an analog signal
In order to provide a multi-layer substrate formed by laminating a plurality of dielectric layers,
The matching adjustment between the active component and the passive component constituting the wireless unit is facilitated, and a matching circuit for performing the matching adjustment between them is not required. Therefore, it is possible to reduce the size of each unit constituting the wireless unit.

Further, since the radio section for processing analog signals has a multi-layer substrate formed by laminating a plurality of dielectric layers, it is possible to improve the loss caused by wiring between active and passive components constituting the radio section. it can. Accordingly, as it becomes possible to improve the loss of the entire radio unit, it is also possible to simultaneously improve the performance of a mobile communication device including the radio unit.

[Brief description of the drawings]

FIG. 1 is a partially cutaway perspective view showing an appearance of an antenna switch unit constituting a wireless unit of a mobile communication device of the present invention.

FIGS. 2A and 2B are circuit diagrams of (a) a directional coupler and (b) a band-pass filter incorporated in a multilayer substrate forming an antenna switch unit shown in FIG.

FIGS. 3A and 3B are top views of (a) a first dielectric layer to (h) an eighth dielectric layer which constitute the multilayer substrate forming the antenna switch unit shown in FIG. 1;

FIGS. 4A and 4B are top views of (a) a ninth dielectric layer to (e) a thirteenth dielectric layer and (f) a thirteenth dielectric layer, which constitute the multilayer substrate forming the antenna switch unit shown in FIG. FIG.

FIG. 5 is a partially cutaway perspective view showing an appearance of a transmission-side frequency conversion unit constituting a wireless unit of the mobile communication device of the present invention.

FIG. 6 is a top view of (a) a first dielectric layer to (h) an eighth dielectric layer which constitute the multilayer substrate forming the transmission-side frequency conversion unit shown in FIG. 5;

7 (a) is a ninth dielectric layer, FIG. 5 (b) is a top view of a tenth dielectric layer, and FIG. 5 (c) is a tenth dielectric layer. It is a bottom view of a body layer.

FIG. 8 is a partially cutaway perspective view showing the appearance of a receiving-side frequency conversion unit constituting a wireless unit of the mobile communication device of the present invention.

FIG. 9 is a block diagram of a wireless unit in a general PDC mobile phone.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Antenna switch part 20 Transmitting-side frequency conversion part 30 Receiving-side frequency conversion part 11, 21, 31 Multilayer board 22 Si-IC (active part) 32 GaAsMMIC (active part) BA1, BA2 Buffer amplifier BPF1-BPF4 High-frequency filter C1-C5 Capacitor (passive component) CPL Directional coupler L1, L2 Inductor (passive component) LNA Low noise amplifier MIX1, MIX2 Mixer PA Power amplifier PSK Quadrature modulator SL1, SL2 Main line, sub line (passive component) SW GaAs switch (active component) )

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Norihiro Nakajima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Stock Company Murata Manufacturing Co., Ltd. (72) Inventor Osamu Okuda 2-26-10 Tenjin, Nagaokakyo-city, Kyoto Stock F-term in Murata Manufacturing Co., Ltd. (reference) 5K011 AA04 BA01 DA02 DA03 DA06 DA12 DA21 DA27 JA01 KA18

Claims (5)

[Claims] 1. A mobile communication device, wherein a radio unit for processing an analog signal includes a multilayer substrate formed by laminating a plurality of dielectric layers made of ceramics. 2. The mobile communication device according to claim 1, wherein a passive component constituting the wireless unit is built in the multilayer board, and an active component is mounted on the multilayer board. 3. The radio section comprises a GaAs switch for switching between transmission and reception, a high-frequency filter for passing a reception signal, and an antenna switch section which is a high-frequency filter or a directional coupler for passing a transmission signal. The mobile communication device according to claim 1 or 2, wherein 4. A radio modulator, comprising: a quadrature modulator for converting an oscillation signal from a fixed oscillator into an intermediate frequency signal for transmission; a buffer amplifier for amplifying a local oscillation signal from a local oscillator; The transmission-side frequency conversion unit comprising a mixer that mixes an intermediate frequency signal and the local oscillation signal to output a transmission signal, and a high-frequency filter that passes the transmission signal. 3. The mobile communication device according to 2. 5. The radio unit includes: a low-noise amplifier that amplifies a received signal; a high-frequency filter that allows the received signal to pass; a buffer amplifier that amplifies a local oscillation signal from a local oscillator; 3. The mobile communication device according to claim 1, wherein the mobile communication device is a reception-side frequency conversion unit including a mixer that mixes a local oscillation signal and outputs a reception intermediate frequency signal.