JP2001284773A - Circuit formation method and plasma treatment apparatus - Google Patents

Circuit formation method and plasma treatment apparatus

Info

Publication number
JP2001284773A
JP2001284773A JP2000100891A JP2000100891A JP2001284773A JP 2001284773 A JP2001284773 A JP 2001284773A JP 2000100891 A JP2000100891 A JP 2000100891A JP 2000100891 A JP2000100891 A JP 2000100891A JP 2001284773 A JP2001284773 A JP 2001284773A
Authority
JP
Japan
Prior art keywords
electrode
molded body
plasma
circuit pattern
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000100891A
Other languages
Japanese (ja)
Other versions
JP3871493B2 (en
Inventor
Makoto Katsumata
信 勝亦
Tatsuya Kato
達也 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Priority to JP2000100891A priority Critical patent/JP3871493B2/en
Publication of JP2001284773A publication Critical patent/JP2001284773A/en
Application granted granted Critical
Publication of JP3871493B2 publication Critical patent/JP3871493B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Plasma Technology (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a circuit formation method which does not require a large- scale manufacturing apparatus including a vacuum chamber, whose production costs can be lowered and which is especially suitable for forming a circuit pattern to a three-dimensional structure and to provide a plasma treatment apparatus which is used suitably for the method. SOLUTION: A surface creepage plate 1 which is formed in such a way that a filamentary electrode 4 which is constituted of a plurality of electrode pieces 4a so as to be separated at prescribed intervals is laminated on a sheetlike electrode 2 via a dielectric layer 3 is used. While the filamentary electrode 4 is brought into contact with the circuit formation face of an insulating molded body 10, it is moved along the circuit pattern as a target. A voltage is applied across the filamentary electrode 4 and the sheetlike electrode 2. A region to which the filamentary electrode 4 on the insulating molded body 10 is moved is plasma-treated. A conductive material is stuck to the plasma- treated region by an electroless plating method.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、樹脂等の絶縁性材
料からなる平板物あるいは3次元構造物の表面に、導電
性材料からなる回路パターンを形成する方法、並びに前
記方法を実施する際に無電解メッキの前処理に使用され
るプラズマ処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a circuit pattern made of a conductive material on the surface of a flat plate or a three-dimensional structure made of an insulating material such as a resin. The present invention relates to a plasma processing apparatus used for pretreatment of electroless plating.

【0002】種々の電気部品に使用されるプリント配線
板の製造方法において、無電解メッキ法により樹脂基板
上に回路パターンを形成する方法が知られている。例え
ば、樹脂基板を回路パターンに沿って表面処理した後、
この樹脂基板をメッキ浴に浸漬することにより、表面処
理された部分に金属(例えば銅)のメッキ層を形成する
方法が一般的である。
In a method of manufacturing a printed wiring board used for various electric parts, a method of forming a circuit pattern on a resin substrate by an electroless plating method is known. For example, after surface treatment of the resin substrate along the circuit pattern,
In general, a method of immersing the resin substrate in a plating bath to form a metal (for example, copper) plating layer on the surface-treated portion.

【0003】[0003]

【発明が解決しようとする課題】上記において、樹脂基
板に回路パターンに沿った表面処理を行う方法としてプ
ラズマによる表面処理が広く行われている。このプラズ
マ処理は、真空チャンバ内の放電用電極間に樹脂基板を
配置し、この樹脂基板に載置したマスクの開口部を介し
てプラズマガスを作用させるものである。従って、真空
チャンバや放電用電極、排気系等をはじめとして装置が
大がかりとなり、また放電用電極の間隔も大きいため、
放電電力も大きなものとなる。しかも、新たな樹脂基板
を処理する都度、真空チャンバ内を真空排気しなければ
ならず、製造コストも高いものとなる。
In the above, as a method of performing a surface treatment on a resin substrate along a circuit pattern, a surface treatment using plasma is widely performed. In this plasma processing, a resin substrate is arranged between discharge electrodes in a vacuum chamber, and a plasma gas is caused to act through an opening of a mask placed on the resin substrate. Therefore, the apparatus becomes large-scale, including a vacuum chamber, a discharge electrode, an exhaust system, and the like, and the distance between the discharge electrodes is large.
The discharge power is also large. In addition, every time a new resin substrate is processed, the inside of the vacuum chamber must be evacuated, which increases the manufacturing cost.

【0004】また、樹脂基板が3次元構造物であり、そ
の各面に沿って3次元的に回路パターンを形成する場合
には、一度の放電で各面に均等にプラズマガスを作用さ
せることは困難であり、各面毎にメッキ層との密着性が
異なることから、製品の品質や歩留りが低下してしま
う。これを避けるために面毎にプラズマ処理することも
考えられるが、同一作業を複数回繰り返すことになり、
生産性が大きく低下する。しかも、3次元構造物に曲面
が存在する場合には、更に困難さを伴う。
Further, when the resin substrate is a three-dimensional structure and a circuit pattern is formed three-dimensionally along each surface, it is not possible to apply plasma gas uniformly to each surface by one discharge. This is difficult, and the adhesion to the plating layer is different for each surface, so that the quality and yield of products are reduced. In order to avoid this, it is conceivable to perform plasma treatment for each surface, but the same operation will be repeated several times,
Productivity drops significantly. In addition, when a curved surface exists in the three-dimensional structure, the difficulty is further increased.

【0005】本発明はこのような状況に鑑みてなされた
ものであり、真空チャンバをはじめとする大がかりな製
造装置を必要せず,製造コストも低くて済み、特に3次
元構造物への回路パターン形成に適した回路形成方法、
並びに前記の方法に好適に使用されるプラズマ処理装置
を提供することを目的とする。
The present invention has been made in view of such a situation, and does not require a large-scale manufacturing apparatus such as a vacuum chamber, and requires a low manufacturing cost. In particular, the circuit pattern for a three-dimensional structure is required. A circuit forming method suitable for forming,
It is another object of the present invention to provide a plasma processing apparatus suitably used in the above method.

【0006】[0006]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、絶縁性成形体に導電性材料からなる回
路パターンを形成する方法において、板状電極上に、誘
電体層を介して、複数の電極片が所定間隔で離間して構
成された線条電極を積層してなる沿面放電板を用い、前
記線条電極を前記絶縁性成形体の回路形成面に当接させ
つつ目的とする回路パターンに沿って移動させるととも
に、該線条電極と前記板状電極との間に電圧を印加し
て、前記絶縁性成形体の前記線条電極が移動した領域を
プラズマ処理し、次いでこのプラズマ処理された領域に
無電解メッキ法により導電性材料を付着させることを特
徴とする回路形成方法を提供する。
In order to achieve the above object, the present invention provides a method for forming a circuit pattern made of a conductive material on an insulative molded body. Through, using a creeping discharge plate formed by laminating linear electrodes formed by separating a plurality of electrode pieces at predetermined intervals, while allowing the linear electrodes to contact the circuit forming surface of the insulating molded body While moving along the intended circuit pattern, a voltage is applied between the linear electrode and the plate-shaped electrode, and the area where the linear electrode of the insulating molded body has moved is subjected to plasma processing, Next, a circuit forming method is provided in which a conductive material is adhered to the region subjected to the plasma treatment by an electroless plating method.

【0007】また、同様の目的を達成するために、本発
明は、絶縁性成形体に無電解メッキ法により導電性材料
からなる回路パターンを形成する際、無電解メッキの前
処理に使用されるプラズマ処理装置において、板状電極
上に、誘電体層を介して、複数の電極片が所定間隔で離
間して構成された線条電極を積層してなる沿面放電板
と、前記板状電極と線条電極との間に電圧を印加する電
源と、前記沿面放電板を先端部に備え、かつ前記線条電
極を前記絶縁性成形体の回路形成面に当接させつつ目的
とする回路パターンに追従して3次元方向に移動させる
アームとを備えることを特徴とするプラズマ処理装置を
提供する。
Further, in order to achieve the same object, the present invention is used for pretreatment of electroless plating when forming a circuit pattern made of a conductive material on an insulative molded body by an electroless plating method. In the plasma processing apparatus, on a plate-shaped electrode, via a dielectric layer, a creeping discharge plate formed by laminating linear electrodes formed by separating a plurality of electrode pieces at predetermined intervals, and the plate-shaped electrode A power source for applying a voltage between the linear electrodes, and a creeping discharge plate provided at a tip portion, and a target circuit pattern while contacting the linear electrodes with a circuit forming surface of the insulating molded body. An arm for following and moving in a three-dimensional direction.

【0008】[0008]

【発明の実施の形態】以下、本発明に関して図面を参照
して詳細に説明する。本発明では、回路形成に際して、
回路が形成される絶縁材料からなる成形体(以下「被処
理物」と呼ぶ)の回路形成面の上を、目的とする回路ハ
ターンに沿って沿面放電板を移動させてプラズマ処理を
行う。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. In the present invention, when forming a circuit,
Plasma processing is performed by moving a creeping discharge plate along a target circuit pattern on a circuit forming surface of a molded body (hereinafter, referred to as “workpiece”) made of an insulating material on which a circuit is formed.

【0009】プラズマ処理に際して、図1に示すプラズ
マ処理装置100を用いる。このプラズマ処理装置10
0は、一般的な産業ロボット、例えば溶接ロボットや塗
工ロボット等と同様にその先端部を3次元的に移動させ
るアーム20を備えており、アーム20の先端に沿面放
電板1が付設されている。
In performing the plasma processing, a plasma processing apparatus 100 shown in FIG. 1 is used. This plasma processing apparatus 10
Reference numeral 0 designates an arm 20 for moving the distal end of the arm 20 three-dimensionally in the same manner as a general industrial robot, for example, a welding robot or a coating robot. The creeping discharge plate 1 is attached to the distal end of the arm 20. I have.

【0010】沿面放電板1は、図2に示すように、平板
の板状電極2の一方の面に誘電体層3を介して線条電極
4を積層して構成される。また、線条電極4は、複数の
直線状の電極片4aを所定間隔で誘電体層3上に配置し
て構成されている。尚、板状電極1及び線条電極4の電
極片4aは耐プラズマ性を有する高融点金属、例えばタ
ングステン等からなり、誘電体層3は耐プラズマ性を有
する高純度アルミナ等のセラミック薄膜である。また、
板状電極2及び線条電極4の各電極片4aは電源5に接
続されており、両電極間には交流電圧が印加される。こ
の電圧印加により、線条電極4の隣接する電極片4a,
4aの間で放電が起こる。従って、線条電極4の電極片
4a,4aの間に適当なプラズマソースとなるガスを導
入することにより、電極片4a,4aの間にプラズマ6
が発生する。
As shown in FIG. 2, the surface discharge plate 1 is formed by laminating a linear electrode 4 on one surface of a flat plate-like electrode 2 with a dielectric layer 3 interposed therebetween. Further, the linear electrode 4 is configured by arranging a plurality of linear electrode pieces 4a on the dielectric layer 3 at predetermined intervals. The electrode piece 4a of the plate electrode 1 and the linear electrode 4 is made of a high melting point metal having plasma resistance, such as tungsten, and the dielectric layer 3 is a ceramic thin film of plasma resistant high purity alumina or the like. . Also,
Each electrode piece 4a of the plate electrode 2 and the linear electrode 4 is connected to a power supply 5, and an AC voltage is applied between the two electrodes. By applying this voltage, the electrode pieces 4a, 4a,
Discharge occurs between 4a. Therefore, by introducing a gas serving as an appropriate plasma source between the electrode pieces 4a, 4a of the linear electrode 4, the plasma 6 is generated between the electrode pieces 4a, 4a.
Occurs.

【0011】プラズマ処理装置100はアーム20を動
かして、この面放電板1の線条電極4を被処理物10の
表面に当接させながら目的とする回路パターンに沿って
移動させ、それと同時に線条電極4と板状電極2との間
に交流電圧を印加する。ここで、沿面放電板1は、線条
電極4の電極片4aが回路パターンと直交するようにア
ーム20により移動される。これにより、被処理物10
の表面はこの線条電極4の移動経路に沿って活性化され
て筋状のプラズマ処理部11が形成される。このプラズ
マ処理部11の幅は、沿面放電板1の線条電極4を構成
する電極片4aの全長(L)に相当することから、電極
片4aの全長(L)を変えることにより、要求される回
路パターンの線幅に容易に対応できる。また、沿面放電
板1の移動速度を変えることによって、プラズマ処理部
11の活性化の程度を制御でき、場合によっては沿面放
電板1を往復移動させてプラズマ処理部11をより強く
活性化することもできる。
The plasma processing apparatus 100 moves the arm 20 to move the linear electrodes 4 of the surface discharge plate 1 along a target circuit pattern while making contact with the surface of the object 10 to be processed. An AC voltage is applied between the strip electrode 4 and the plate electrode 2. Here, the creeping discharge plate 1 is moved by the arm 20 so that the electrode piece 4a of the linear electrode 4 is orthogonal to the circuit pattern. Thereby, the object to be processed 10
Is activated along the movement path of the linear electrode 4 to form a streak-like plasma processing portion 11. Since the width of the plasma processing section 11 corresponds to the total length (L) of the electrode piece 4a constituting the linear electrode 4 of the creeping discharge plate 1, it is required by changing the total length (L) of the electrode piece 4a. It can easily respond to the line width of the circuit pattern. In addition, by changing the moving speed of the surface discharge plate 1, the degree of activation of the plasma processing unit 11 can be controlled. In some cases, the plasma processing unit 11 can be activated more strongly by reciprocating the surface discharge plate 1. Can also.

【0012】上記のプラズマ処理装置100によれば、
プラズマ6は線条電極4の隣接する電極片4aの間での
み発生すればよいため、少ない放電電圧でプラズマ6を
発生でき、製造コストを低減することができる。また、
プラズマソースガスは沿面放電板1の線条電極4と被処
理物10の回路形成面との間に供給されればよいから、
従来の真空チャンバのような特殊な気密容器内で放電を
行う必要がなく、例えば簡単な排気手段及びガスの導入
部を沿面放電板1に近接して設けることにより、大気圧
下でも行うことができ、設備コストも大幅に低減でき
る。更に、従来は真空チャンバに収納できない大型の被
処理物10や長い被処理物10には対処できなかった
が、本発明によればアーム20の移動範囲であればプラ
ズマ処理が可能である。あるいは、被処理物10をアー
ム20に対して移動させる構成にすれば、理論上は被処
理物20の形状的及び寸法的な制約は無くなる。
According to the above plasma processing apparatus 100,
Since the plasma 6 only needs to be generated between the electrode pieces 4a adjacent to the linear electrode 4, the plasma 6 can be generated with a small discharge voltage, and the manufacturing cost can be reduced. Also,
The plasma source gas may be supplied between the linear electrode 4 of the creeping discharge plate 1 and the circuit forming surface of the workpiece 10.
It is not necessary to perform discharge in a special hermetic container such as a conventional vacuum chamber. For example, by providing a simple exhaust means and a gas introduction portion close to the creeping discharge plate 1, the discharge can be performed under atmospheric pressure. And equipment costs can be greatly reduced. Further, conventionally, it has not been possible to cope with a large workpiece 10 or a long workpiece 10 that cannot be accommodated in the vacuum chamber. However, according to the present invention, plasma processing is possible within the moving range of the arm 20. Alternatively, if the processing target 10 is moved with respect to the arm 20, theoretically, there are no restrictions on the shape and dimensions of the processing target 20.

【0013】上記において、プラズマソースガスは被処
理物10を形成する材料により適宜選択されるが、一般
的なプラズマ処理に使用されるアルゴンや窒素等の不活
性ガス、水素、酸素等を適宜選択して用いることができ
る。場合によっては、空気であってもよく、その場合は
室内での放電が可能である。また、プラズマによる処理
時間は特に制限されるものではなく、被処理物10を形
成する材料、プラズマソースガスの種類、活性化の程度
等を考慮して適宜設定されるが、一般的には数秒の放電
で十分である。
In the above description, the plasma source gas is appropriately selected depending on the material forming the object to be processed 10, but an inert gas such as argon or nitrogen, hydrogen, oxygen or the like, which is used in general plasma processing, is appropriately selected. Can be used. In some cases, it may be air, in which case it is possible to discharge indoors. The processing time by the plasma is not particularly limited, and is appropriately set in consideration of the material for forming the object to be processed 10, the type of the plasma source gas, the degree of activation, and the like. Is sufficient.

【0014】そして、このプラズマ処理された被処理物
10をメッキ浴に浸漬することにより、プラズマ処理部
11にメッキ金属が付着してその金属膜からなる回路パ
ターンが形成される。メッキ浴の組成やメッキ条件には
特に制限はなく、従来技術に従うことができる。また、
必要により、付着した金属膜を電極とした電解メッキを
追加してもよい。
Then, by immersing the plasma-processed object 10 in a plating bath, a plating metal adheres to the plasma processing section 11 to form a circuit pattern composed of the metal film. There are no particular restrictions on the composition of the plating bath or the plating conditions, and conventional techniques can be followed. Also,
If necessary, electrolytic plating using an attached metal film as an electrode may be added.

【0015】上記において、被処理物10を形成する絶
縁材料に特に制限はないが、ポリエチレン、ポリプロピ
レン、アクリル樹脂、ポリエステル、ポリエーテルエー
テルケトン、ポリエーテルイミド、ポリスルホン、ポリ
エーテルスルホン、ポリフェニレンサルファイド等のプ
リント配線板に通常使用される各種樹脂、あるいはこれ
らの樹脂にガラス繊維等のフィラーを添加したもの等が
挙げられる。また、プラズマ処理効率を上げるために、
これらの材料に例えばパラジウム等の触媒を混入しても
よい。プラズマ処理条件は、これら材料の種類や物性を
考慮して適宜選択される。
In the above, the insulating material forming the article to be treated 10 is not particularly limited, but may be polyethylene, polypropylene, acrylic resin, polyester, polyetheretherketone, polyetherimide, polysulfone, polyethersulfone, polyphenylenesulfide or the like. Examples include various resins commonly used for printed wiring boards, or resins obtained by adding fillers such as glass fibers to these resins. Also, to increase the plasma processing efficiency,
These materials may be mixed with a catalyst such as palladium. The plasma processing conditions are appropriately selected in consideration of the types and physical properties of these materials.

【0016】[0016]

【発明の効果】上記に説明したように、本発明に従い沿
面放電板を用ることにより、真空チャンバをはじめとす
る大がかりな装置を必要とせずに、安価に各種の絶縁性
成形体に回路パターンを形成することができる。また、
沿面放電板を被処理物の回路形成面に沿って移動できる
構成としたため、従来では困難であった例えば複雑な曲
面を有するような3次元構造物や、真空チャンバに収容
できない大型の被処理物にも密着性の高い回路パターン
を形成することができるようになる。
As described above, by using a surface discharge plate according to the present invention, circuit patterns can be formed on various insulative moldings at low cost without requiring a large-scale apparatus such as a vacuum chamber. Can be formed. Also,
Since the creeping discharge plate is configured to be movable along the circuit forming surface of the object to be processed, it has been difficult in the past, for example, a three-dimensional structure having a complicated curved surface or a large object to be processed that cannot be accommodated in a vacuum chamber. Thus, a circuit pattern having high adhesion can be formed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明において使用されるプラズマ処理装置の
一例を示す概略斜視図である。
FIG. 1 is a schematic perspective view showing an example of a plasma processing apparatus used in the present invention.

【図2】沿面放電板を示す概略斜視図である。FIG. 2 is a schematic perspective view showing a surface discharge plate.

【符号の説明】[Explanation of symbols]

1 沿面放電板 2 板状電極 3 誘電体層 4 線状電極 4a 電極片 5 電源 6 プラズマ 10 被処理物 11 ブラズマ処理部 100 プラズマ処理装置 DESCRIPTION OF SYMBOLS 1 Surface discharge plate 2 Plate electrode 3 Dielectric layer 4 Linear electrode 4a Electrode piece 5 Power supply 6 Plasma 10 Workpiece 11 Plasma processing part 100 Plasma processing apparatus

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4K022 AA13 AA15 AA16 AA17 AA19 AA23 CA12 DA01 5E343 AA01 AA12 AA39 BB14 BB21 BB71 DD33 EE36 FF30 GG11 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K022 AA13 AA15 AA16 AA17 AA19 AA23 CA12 DA01 5E343 AA01 AA12 AA39 BB14 BB21 BB71 DD33 EE36 FF30 GG11

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 絶縁性成形体に導電性材料からなる回路
パターンを形成する方法において、 板状電極上に、誘電体層を介して、複数の電極片が所定
間隔で離間して構成された線条電極を積層してなる沿面
放電板を用い、前記線条電極を前記絶縁性成形体の回路
形成面に当接させつつ目的とする回路パターンに沿って
移動させるとともに、該線条電極と前記板状電極との間
に電圧を印加して、前記絶縁性成形体の前記線条電極が
移動した領域をプラズマ処理し、次いでこのプラズマ処
理された領域に無電解メッキ法により導電性材料を付着
させることを特徴とする回路形成方法。
1. A method for forming a circuit pattern made of a conductive material on an insulative molded body, comprising a step of forming a plurality of electrode pieces on a plate-like electrode at predetermined intervals via a dielectric layer. Using a creeping discharge plate formed by laminating the linear electrodes, moving the linear electrodes along the intended circuit pattern while abutting the linear electrodes on the circuit forming surface of the insulating molded body, and A voltage is applied between the plate-shaped electrode and the area where the linear electrode of the insulative molded body has been moved is plasma-treated, and then a conductive material is applied to the plasma-treated area by electroless plating. A circuit forming method characterized by attaching.
【請求項2】 前記絶縁性成形体が、樹脂製のフィル
ム、平板または3次元構造物であることを特徴とする請
求項1記載の回路形成方法。
2. The circuit forming method according to claim 1, wherein the insulating molded body is a resin film, a flat plate, or a three-dimensional structure.
【請求項3】 絶縁性成形体に無電解メッキ法により導
電性材料からなる回路パターンを形成する際、無電解メ
ッキの前処理に使用されるプラズマ処理装置において、 板状電極上に、誘電体層を介して、複数の電極片が所定
間隔で離間して構成された線条電極を積層してなる沿面
放電板と、 前記板状電極と線条電極との間に電圧を印加する電源
と、 前記沿面放電板を先端部に備え、かつ前記線条電極を前
記絶縁性成形体の回路形成面に当接させつつ目的とする
回路パターンに追従して3次元方向に移動させるアーム
とを備えることを特徴とするプラズマ処理装置。
3. A plasma processing apparatus used for pretreatment of electroless plating when forming a circuit pattern made of a conductive material on an insulative molded body by an electroless plating method. Through a layer, a creeping discharge plate formed by laminating linear electrodes formed by separating a plurality of electrode pieces at predetermined intervals, and a power supply for applying a voltage between the plate-shaped electrode and the linear electrodes An arm provided with the creeping discharge plate at a tip end, and an arm for moving the linear electrode in a three-dimensional direction following an intended circuit pattern while making contact with the circuit forming surface of the insulating molded body. A plasma processing apparatus characterized by the above-mentioned.
JP2000100891A 2000-04-03 2000-04-03 Circuit forming method and plasma processing apparatus Expired - Fee Related JP3871493B2 (en)

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Application Number Priority Date Filing Date Title
JP2000100891A JP3871493B2 (en) 2000-04-03 2000-04-03 Circuit forming method and plasma processing apparatus

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JP2001284773A true JP2001284773A (en) 2001-10-12
JP3871493B2 JP3871493B2 (en) 2007-01-24

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190032081A (en) * 2017-09-19 2019-03-27 (주) 엠에이케이 A apparatus for processing a curved substrate by plasma

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190032081A (en) * 2017-09-19 2019-03-27 (주) 엠에이케이 A apparatus for processing a curved substrate by plasma
KR102186956B1 (en) * 2017-09-19 2020-12-04 (주) 엠에이케이 A apparatus for processing a curved substrate by plasma

Also Published As

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