JP2001266326A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JP2001266326A JP2001266326A JP2000083440A JP2000083440A JP2001266326A JP 2001266326 A JP2001266326 A JP 2001266326A JP 2000083440 A JP2000083440 A JP 2000083440A JP 2000083440 A JP2000083440 A JP 2000083440A JP 2001266326 A JP2001266326 A JP 2001266326A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- film
- recording layer
- medium
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Thin Magnetic Films (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、ハードディスク
などの磁気記録媒体に関し、詳しくはスパッタリング法
で形成されたCo系合金磁気記録層を備えてなる面内磁
気記録媒体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium such as a hard disk, and more particularly to a longitudinal magnetic recording medium having a Co-based alloy magnetic recording layer formed by a sputtering method.
【0002】[0002]
【従来の技術】情報通信分野で扱う情報量の急増に対応
し、磁気記録装置に対して高記録密度化が求められてい
る。そのため、磁気記録装置に用いられる磁気記録媒体
(以下、単に媒体とも称する)には高い保磁力(H
c),低い残留磁化膜厚積(tMr)が必須である。保
磁力を増大させる課題には磁気記録層にPtを添加させ
ることにより対応してきた。また、再生ヘッドも高感度
な再生ヘッドが使用されるようになり、それに対応する
ため媒体そのものの低ノイズ化も求められ、その対策と
しては磁気記録層のCr量を増やす方法が一般に採られ
てきた。また、磁気記録層にBを添加することが有効で
あることもよく知られている。2. Description of the Related Art In response to a rapid increase in the amount of information handled in the field of information communication, magnetic recording devices are required to have higher recording densities. Therefore, a magnetic recording medium (hereinafter, also simply referred to as a medium) used in a magnetic recording apparatus has a high coercive force (H
c) A low remanence film thickness product (tMr) is essential. The problem of increasing the coercive force has been addressed by adding Pt to the magnetic recording layer. In addition, a high-sensitivity reproducing head has been used as the reproducing head, and in order to cope with this, it has been required to reduce the noise of the medium itself. As a countermeasure, a method of increasing the amount of Cr in the magnetic recording layer has been generally adopted. Was. It is also well known that adding B to a magnetic recording layer is effective.
【0003】[0003]
【発明が解決しようとする課題】磁気記録層へのPt添
加量を増やすことによりHcは上昇するが、Ptが高価
であるため媒体価格が高くなる。また、Pt添加による
高Hc化には限界がある。例えば、長手磁気記録方式に
おいて、40Gbits/in2 以上の記録密度に対し
ては5000Oe程度のHcが必要とされるが、同時に
出力の大きさを決定するtMrは0.3memu/cm
2 程度まで低減する必要がある。磁気記録層膜厚は通常
15nm〜20nmであり、このような薄膜では500
0Oe程度のHcを得ることは難しい。この発明は、上
述の点に鑑みてなされたものであって、低価格で高記録
密度の媒体を提供することを目的とする。Hc increases as the amount of Pt added to the magnetic recording layer increases, but the media price increases because Pt is expensive. Further, there is a limit to the increase in Hc by adding Pt. For example, in the longitudinal magnetic recording method, Hc of about 5000 Oe is required for a recording density of 40 Gbits / in 2 or more, but at the same time, tMr which determines the magnitude of output is 0.3 memu / cm.
It needs to be reduced to about 2 . The thickness of the magnetic recording layer is usually 15 nm to 20 nm, and such a thin film has a thickness of 500 nm.
It is difficult to obtain Hc of about 0 Oe. The present invention has been made in view of the above points, and has as its object to provide a low-price, high-density medium.
【0004】[0004]
【課題を解決するための手段】上記の課題は、この発明
によれば、非磁性基板上にCo系合金磁気記録層を備え
てなる磁気記録媒体において、前記Co系合金磁気記録
層にランタノイド系列希土類遷移金属を含有させること
によって解決される。本発明者は媒体の保磁力の向上、
残留磁化膜厚積の低減を目的に磁気記録層への添加物に
ついて種々調査を進め、Ptに代えてランタノイド系列
希土類遷移金属の添加が有効であることを見いだしたの
である。ランタノイド系列希土類遷移金属の添加量は5
原子%〜30原子%が望ましい。ランタノイド系列希土
類遷移金属の中でも、磁気異方性エネルギーの点でS
m,Eu,Gd,Tb,Dyが特に好ましい。According to the present invention, there is provided a magnetic recording medium comprising a Co-based alloy magnetic recording layer on a non-magnetic substrate, wherein the Co-based alloy magnetic recording layer includes a lanthanoid-based magnetic recording layer. The problem is solved by including a rare earth transition metal. The present inventor has improved the coercive force of the medium,
Various studies were conducted on additives to the magnetic recording layer for the purpose of reducing the product of the residual magnetization film thickness, and it was found that the addition of a lanthanoid-based rare earth transition metal instead of Pt was effective. The addition amount of the lanthanoid series rare earth transition metal is 5
Atomic% to 30 atomic% is desirable. Among the lanthanoid series rare earth transition metals, S in terms of magnetic anisotropy energy
m, Eu, Gd, Tb and Dy are particularly preferred.
【0005】また、Co系合金磁気記録層にCrおよび
ランタノイド系列希土類遷移金属を含有させると低ノイ
ズとなり好適である。さらにまた、Co系合金磁気記録
層にCrとランタノイド系列希土類遷移金属およびBを
含有させるとよりノイズが低減され好適である。磁気記
録層の材料組成としては、Cr15原子%〜25原子
%,ランタノイド系列希土類遷移金属5原子%〜30原
子%,B0原子%〜6原子%,Co残部の範囲の組成が
望ましい。[0005] It is preferable that the Co-based alloy magnetic recording layer contains Cr and a lanthanoid-based rare-earth transition metal, because the noise is reduced. Further, it is preferable that the Co-based alloy magnetic recording layer contains Cr, a lanthanoid-based rare-earth transition metal and B to further reduce noise. The material composition of the magnetic recording layer is desirably in the range of 15 atomic% to 25 atomic% of Cr, 5 atomic% to 30 atomic% of lanthanoid series rare earth transition metal, 0 atomic% to 6 atomic% of B, and the balance of Co.
【0006】[0006]
【発明の実施の形態】図1は、この発明に係る媒体の層
構成の一例を示す模式的断面図で、非磁性の基板1上に
下地膜2,磁気記録層としての磁性層3,保護膜4,潤
滑膜5が順次形成されてなる。基板1としては、アルミ
ニウム系合金基板,ガラス基板など通常用いられる材質
の基板はいずれも適用できる。FIG. 1 is a schematic sectional view showing an example of a layer structure of a medium according to the present invention. An underlayer 2, a magnetic layer 3 as a magnetic recording layer, and a protective layer 3 are formed on a nonmagnetic substrate 1. The film 4 and the lubricating film 5 are sequentially formed. As the substrate 1, any substrate of a commonly used material such as an aluminum alloy substrate and a glass substrate can be used.
【0007】下地膜2は、スパッタリング法で成膜さ
れ、単層でも2層以上の多層構造でもよい。下地膜の材
料は通常用いられる材料,例えばCr合金,Ni合金な
どいずれでもよいが、少なくとも一層以上のCr合金膜
が形成されることが好ましい。Cr合金としては、例え
ばMo,V,W,Mn,Tiなどとの合金が用いられ
る。膜厚は5nm〜30nmとされる。The base film 2 is formed by a sputtering method, and may have a single layer or a multilayer structure of two or more layers. The material of the base film may be any of commonly used materials such as a Cr alloy and a Ni alloy, but it is preferable that at least one or more Cr alloy films are formed. As the Cr alloy, for example, an alloy with Mo, V, W, Mn, Ti, or the like is used. The thickness is 5 nm to 30 nm.
【0008】磁性膜3は、スパッタリング法で成膜さ
れ、ランタノイド系列希土類遷移金属を含むCo合金、
またはランタノイド系列希土類遷移金属およびCrを含
むCo合金、またはランタノイド系列希土類遷移金属,
CrおよびBを含むCo合金からなる。ランタノイド系
列希土類遷移金属の添加量は5原子%〜30原子%、C
rの添加量は15原子%〜25原子%、Bの添加量は0
原子%〜6原子%の範囲とされる。膜厚は10nm〜4
0nmとされる。The magnetic film 3 is formed by a sputtering method, and includes a Co alloy containing a lanthanoid-based rare earth transition metal,
Or a Co alloy containing a lanthanoid series rare earth transition metal and Cr, or a lanthanoid series rare earth transition metal,
It is made of a Co alloy containing Cr and B. The addition amount of the lanthanoid series rare earth transition metal is 5 atomic% to 30 atomic%,
The addition amount of r is 15 atomic% to 25 atomic%, and the addition amount of B is 0 atomic%.
The range is from atomic% to 6 atomic%. The film thickness is 10 nm to 4
0 nm.
【0009】保護膜4は、カーボンをスパッタリング法
またはCVD法で成膜して形成する。膜厚は5nm〜1
5nmとされる。スパッタリングは5mTorr〜40
mTorrの真空中で行われ、基板温度は室温〜500
℃,好ましくは220℃〜280℃とされる。この保護
膜4上に、液体潤滑剤を10nm〜20nmの厚さに塗
布して潤滑膜5を形成して媒体を作製する。The protective film 4 is formed by depositing carbon by sputtering or CVD. The film thickness is 5 nm to 1
5 nm. Sputtering is 5mTorr ~ 40
It is performed in a vacuum of mTorr, and the substrate temperature is from room temperature to 500
° C, preferably 220 ° C to 280 ° C. A liquid lubricant is applied to a thickness of 10 nm to 20 nm on the protective film 4 to form a lubricating film 5 to produce a medium.
【0010】[0010]
【実施例】以下、具体的な実施例について説明する。 実施例1 表面にNi−P膜の形成されたアルミニウム系合金円盤
の基板1上に、スパッタリング法により、10mTor
rの真空中,基板温度250℃として、Cr80Mo20の
組成のCr合金下地膜2,Co64Cr24Sm10B2 の組
成のCo合金磁性膜3,カーボン保護膜4を連続的に成
膜し、その上に液体潤滑剤を塗布して潤滑膜5を形成し
て媒体を作製する。Cr合金下地膜2の膜厚は20n
m、カーボン保護膜4の膜厚は10nm、潤滑膜5の膜
厚は20nmとし、Co合金磁性膜3の膜厚を10nm
〜40nmの範囲内で変えて10種類の媒体を作製し
た。Embodiments Hereinafter, specific embodiments will be described. Example 1 On a substrate 1 of an aluminum alloy disk having a Ni-P film formed on its surface, 10 mTorr was formed by a sputtering method.
Under a vacuum of r and a substrate temperature of 250 ° C., a Cr alloy base film 2 of Cr 80 Mo 20 composition, a Co alloy magnetic film 3 of Co 64 Cr 24 Sm 10 B 2 composition, and a carbon protective film 4 are continuously formed. A film is formed, and a liquid lubricant is applied thereon to form a lubricating film 5 to produce a medium. The thickness of the Cr alloy base film 2 is 20 n
m, the thickness of the carbon protective film 4 is 10 nm, the thickness of the lubricating film 5 is 20 nm, and the thickness of the Co alloy magnetic film 3 is 10 nm.
Ten kinds of media were prepared by changing within a range of 4040 nm.
【0011】実施例2 実施例1において、Co合金磁性膜3の組成をCo68C
r20Eu10B2 に変えたこと以外は実施例1と同様にし
て媒体を作製した。 実施例3 実施例1において、Co合金磁性膜3の組成をCo61C
r23Gd12B4 に変えたこと以外は実施例1と同様にし
て媒体を作製した。Example 2 In Example 1, the composition of the Co alloy magnetic film 3 was changed to Co 68 C
to prepare a medium except for changing the r 20 Eu 10 B 2 in the same manner as in Example 1. Example 3 In Example 1, the composition of the Co alloy magnetic film 3 was changed to Co 61 C
to prepare a medium except for changing the r 23 Gd 12 B 4 in the same manner as in Example 1.
【0012】実施例4 実施例1において、Co合金磁性膜3の組成をCo64C
r24Tb10B2 に変えたこと以外は実施例1と同様にし
て媒体を作製した。 実施例5 実施例1において、Co合金磁性膜3の組成をCo64C
r24Dy10B2 に変えたこと以外は実施例1と同様にし
て媒体を作製した。Example 4 In Example 1, the composition of the Co alloy magnetic film 3 was changed to Co 64 C
A medium was prepared in the same manner as in Example 1, except that r 24 Tb 10 B 2 was used. Example 5 In Example 1, the composition of the Co alloy magnetic film 3 was changed to Co 64 C
A medium was prepared in the same manner as in Example 1, except that r 24 Dy 10 B 2 was used.
【0013】比較例1 実施例1において、Co合金磁性膜3の組成をCo64C
r20Pt13Ta3 に変えたこと以外は実施例1と同様に
して媒体を作製した。 比較例2 実施例1において、Co合金磁性膜3の組成をCo64C
r19Pt15Ta2 に変えたこと以外は実施例1と同様に
して媒体を作製した。Comparative Example 1 In Example 1, the composition of the Co alloy magnetic film 3 was changed to Co 64 C
to prepare a medium except for changing the r 20 Pt 13 Ta 3 in the same manner as in Example 1. Comparative Example 2 In Example 1, the composition of the Co alloy magnetic film 3 was changed to Co 64 C
A medium was produced in the same manner as in Example 1 except that r 19 Pt 15 Ta 2 was used.
【0014】膜厚の測定は触針式段差計で行った。この
ようにして得られた実施例および比較例の各媒体の磁気
特性を校正された振動試料磁気計(VSM)で測定し、
長手方向(記録方向)保磁力と残留磁化膜厚積との関係
を調べた。その結果を図2の線図に示す。図2に見られ
るように、比較例の各媒体に比して実施例の各媒体は、
特に残留磁化膜厚積が0.3memu/cm2 〜0.6
memu/cm2 の範囲で4,500Oeを超える非常
に大きな保磁力を示し、高記録密度の媒体であることが
判る。磁性膜3にランタノイド系列希土類遷移金属を添
加するこの発明の効果は明らかである。The film thickness was measured with a stylus step meter. The magnetic properties of the media thus obtained in the examples and comparative examples were measured with a calibrated vibrating sample magnetometer (VSM).
The relationship between the coercive force in the longitudinal direction (recording direction) and the product of the residual magnetization film thickness was examined. The results are shown in the diagram of FIG. As can be seen in FIG. 2, each medium of the example is different from each medium of the comparative example.
In particular, the product of the residual magnetization film thickness is 0.3 memu / cm 2 to 0.6.
It shows a very large coercive force exceeding 4,500 Oe in the range of memu / cm 2 , which indicates that the medium has a high recording density. The effect of the present invention in which a lanthanoid-based rare earth transition metal is added to the magnetic film 3 is clear.
【0015】[0015]
【発明の効果】この発明によれば、非磁性基板上にCo
系合金磁気記録層を備えてなる磁気記録媒体において、
磁気記録層にランタノイド系列希土類遷移金属を添加さ
せることにより、高価なPtを用いることなく、高保磁
力で、かつ、低残留磁化膜厚積のものとすることができ
るので、高記録密度の媒体が低価格で得られる。Co系
合金磁気記録層に、さらに、CrまたはBを添加するこ
とにより、あるいはCrとBを一緒に添加することによ
り、高保磁力,低残留磁化膜厚積,低ノイズの優れた媒
体を得るとが可能となる。According to the present invention, Co on a non-magnetic substrate
A magnetic recording medium comprising a base alloy magnetic recording layer,
By adding a lanthanoid-based rare earth transition metal to the magnetic recording layer, a high coercive force and a low remanence film thickness product can be obtained without using expensive Pt. Obtained at a low price. By adding Cr or B to the Co-based alloy magnetic recording layer, or by adding Cr and B together, a medium excellent in high coercive force, low remanence film thickness product, and low noise can be obtained. Becomes possible.
【図1】この発明に係る媒体の層構成の一例を示す模式
的断面図FIG. 1 is a schematic sectional view showing an example of a layer configuration of a medium according to the present invention.
【図2】実施例および比較例の各媒体の保磁力と残留磁
化膜厚積との関係を示す線図FIG. 2 is a diagram showing a relationship between a coercive force and a product of a residual magnetization thickness of each medium of an example and a comparative example.
1 基板 2 下地膜 3 磁性膜 4 保護膜 5 潤滑膜 DESCRIPTION OF SYMBOLS 1 Substrate 2 Underlayer 3 Magnetic film 4 Protective film 5 Lubricating film
Claims (3)
れたCo系合金磁気記録層を備えてなる磁気記録媒体に
おいて、前記磁気記録層がランタノイド系列希土類遷移
金属を含むことを特徴とする磁気記録媒体。1. A magnetic recording medium comprising a Co-based alloy magnetic recording layer formed on a non-magnetic substrate by a sputtering method, wherein the magnetic recording layer contains a lanthanoid-based rare earth transition metal. Medium.
れたCo系合金磁気記録層を備えてなる磁気記録媒体に
おいて、前記磁気記録層がCrおよびランタノイド系列
希土類遷移金属を含むことを特徴とする磁気記録媒体。2. A magnetic recording medium comprising a Co-based alloy magnetic recording layer formed on a non-magnetic substrate by a sputtering method, wherein the magnetic recording layer contains Cr and a lanthanoid-based rare earth transition metal. Magnetic recording medium.
れたCo系合金磁気記録層を備えてなる磁気記録媒体に
おいて、前記磁気記録層がCr,ランタノイド系列希土
類遷移金属およびBを含むことを特徴とする磁気記録媒
体。3. A magnetic recording medium comprising a Co-based alloy magnetic recording layer formed on a non-magnetic substrate by a sputtering method, wherein said magnetic recording layer contains Cr, a lanthanoid-based rare earth transition metal and B. Magnetic recording medium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2000083440A JP2001266326A (en) | 2000-03-24 | 2000-03-24 | Magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000083440A JP2001266326A (en) | 2000-03-24 | 2000-03-24 | Magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001266326A true JP2001266326A (en) | 2001-09-28 |
Family
ID=18600079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2000083440A Withdrawn JP2001266326A (en) | 2000-03-24 | 2000-03-24 | Magnetic recording medium |
Country Status (1)
Country | Link |
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JP (1) | JP2001266326A (en) |
-
2000
- 2000-03-24 JP JP2000083440A patent/JP2001266326A/en not_active Withdrawn
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