JP2001261939A - Liquid resin composition and semiconductor device by using the same - Google Patents

Liquid resin composition and semiconductor device by using the same

Info

Publication number
JP2001261939A
JP2001261939A JP2000078107A JP2000078107A JP2001261939A JP 2001261939 A JP2001261939 A JP 2001261939A JP 2000078107 A JP2000078107 A JP 2000078107A JP 2000078107 A JP2000078107 A JP 2000078107A JP 2001261939 A JP2001261939 A JP 2001261939A
Authority
JP
Japan
Prior art keywords
resin composition
liquid resin
liquid
semiconductor device
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000078107A
Other languages
Japanese (ja)
Inventor
Kazuto Ounami
一登 濤
Hikari Okubo
光 大久保
Ryuichi Murayama
竜一 村山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2000078107A priority Critical patent/JP2001261939A/en
Publication of JP2001261939A publication Critical patent/JP2001261939A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a liquid resin composition with high reliability, exhibiting good reflow resistance even if a reflow temperature is changed to 260 deg.C according to the trend directed to lead-free state, and further to provide a package with the high reliability by using the liquid resin composition. SOLUTION: This liquid resin composition comprises a filler (A), a liquid epoxy resin (B), a bismaleimide compound and/or a prepolymer thereof (C), and a curing agent (D), regulated so that the amount of the component (C) may be 4-35 pts.wt. based on 100 pts.wt. epoxy resin (B). The semiconductor device is obtained by using the liquid resin composition as a die attach paste.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はIC、LSI等の半
導体素子を金属フレーム等に接着する液状樹脂組成物に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid resin composition for bonding a semiconductor element such as an IC or an LSI to a metal frame or the like.

【0002】[0002]

【従来の技術】近年の環境問題への意識の向上に伴い半
導体製品を有機基板に搭載する工程で使用されていた半
田を鉛フリーの半田に置き換える検討が盛んになされて
いる。このためリフロー温度も従来の220℃あるいは
240℃から260℃へ変更する必要があり、半導体製
品構成部材もより高温での耐リフロー性が要求され始め
ている。しかし、従来のダイアタッチ材では240℃ま
でのリフロー温度では使用可能であったが260℃リフ
ローに耐えるものは存在しなかった。
2. Description of the Related Art With an increase in awareness of environmental issues in recent years, studies have been actively conducted to replace solder used in a process of mounting a semiconductor product on an organic substrate with lead-free solder. For this reason, the reflow temperature also needs to be changed from the conventional 220 ° C. or 240 ° C. to 260 ° C., and the reflow resistance at a higher temperature has also been required for semiconductor product components. However, the conventional die attach material can be used at a reflow temperature of up to 240 ° C., but none of them can withstand 260 ° C. reflow.

【0003】[0003]

【発明が解決しようとする課題】本発明は鉛フリー化の
動向に伴い、リフロー温度が260℃に変更されても良
好な耐リフロー性を示す高信頼性の液状樹脂組成物を提
供し、ひいては本発明の液状樹脂組成物を使用すること
で高信頼性のパッケージを提供することである。
SUMMARY OF THE INVENTION The present invention provides a highly reliable liquid resin composition exhibiting good reflow resistance even when the reflow temperature is changed to 260 ° C. with the trend of lead-free. An object of the present invention is to provide a highly reliable package by using the liquid resin composition of the present invention.

【0004】[0004]

【課題を解決するための手段】本発明はフィラー
(A)、液状エポキシ樹脂(B)、一般式(1)で示さ
れるビスマレイミド化合物及び/又はそのプレポリマー
(C)、硬化剤(D)からなり、(C)の量が液状エポ
キシ樹脂100重量部に対して4〜35重量部である液
状樹脂組成物である。
The present invention provides a filler (A), a liquid epoxy resin (B), a bismaleimide compound represented by the general formula (1) and / or a prepolymer (C) thereof, and a curing agent (D). And the amount of (C) is 4 to 35 parts by weight based on 100 parts by weight of the liquid epoxy resin.

【化2】 Embedded image

【0005】また、上記の液状樹脂組成物をダイアタッ
チ材として使用して作製された半導体装置である。
Further, there is provided a semiconductor device manufactured by using the above liquid resin composition as a die attach material.

【0006】[0006]

【発明の実施の形態】本発明に用いるフィラーは用いる
分野が半導体用途のためハロゲンイオン、アルカリ金属
イオン等のイオン性不純物量が10ppm以下であるこ
とが望ましい。また要求特性により銀、金、銅、ニッケ
ルなどの金属フィラー、シリカ、窒化アルミ、窒化ボロ
ンなどの無機フィラーをあるいは焼成フェノール粒子、
ポリイミド粒子等の有機フィラーを単独あるいは併用し
て使用可能である。
BEST MODE FOR CARRYING OUT THE INVENTION The filler used in the present invention is desirably used in semiconductor applications in an amount of 10 ppm or less of ionic impurities such as halogen ions and alkali metal ions. In addition, depending on the required characteristics, metal fillers such as silver, gold, copper, and nickel, inorganic fillers such as silica, aluminum nitride, and boron nitride, or calcined phenol particles,
Organic fillers such as polyimide particles can be used alone or in combination.

【0007】形状としてはフレーク状、繊維状、樹脂
状、不定形あるいは球状のものを単独あるいは混合して
用いることができる。さらに粒径に関しては通常平均粒
径が2〜10μm、最大粒径は50μm程度のものが好
ましく、比較的細かいフィラーと粗いフィラーを混合し
て用いてもよい。
[0007] Flakes, fibers, resins, amorphous or spherical shapes can be used alone or in combination. Further, with respect to the particle size, usually, the average particle size is preferably 2 to 10 μm and the maximum particle size is preferably about 50 μm, and a mixture of a relatively fine filler and a coarse filler may be used.

【0008】また本発明に用いるエポキシ樹脂は液状の
物に限定しているが、常温で液状の物でないとフィラー
との混練において溶剤が必要となる。溶剤は気泡の原因
となり硬化物の接着強度、熱伝導率を低下させてしまう
ので好ましくない。ここで常温で液状のエポキシ樹脂と
は、例えば常温で固形のものでも常温で液状のエポキシ
樹脂と混合することで常温で安定して液状を示す物を含
む。また半導体用途に用いるため、加水分解性塩素量が
1000ppm以下であることが望ましい。
The epoxy resin used in the present invention is limited to a liquid one. However, if the epoxy resin is not liquid at ordinary temperature, a solvent is required for kneading with the filler. The solvent is not preferable because it causes bubbles and lowers the adhesive strength and thermal conductivity of the cured product. Here, the epoxy resin which is liquid at ordinary temperature includes, for example, an epoxy resin which is solid at ordinary temperature and shows a stable liquid at ordinary temperature by being mixed with the epoxy resin which is liquid at ordinary temperature. For use in semiconductor applications, the amount of hydrolyzable chlorine is desirably 1000 ppm or less.

【0009】これらの要件を満足するエポキシ樹脂であ
れば、特に限定されるものではないが、具体例を挙げる
と、ビスフェノールAジグリシジルエーテル、ビスフェ
ノールFジグリシジルエーテル、3,3’−ジアリルビ
スフェノールAジグリシジルエーテル、フェノールノボ
ラックやクレゾールノボラック類とエピクロルヒドリン
との反応により得られるポリグリシジルエーテル、1、
6ージヒドロキシナフタレンジグリシジルエーテル、
N,N−ジグリシジルアミノ−1,3−グリシジルフェ
ニルエーテル等があり、これらは単独でも混合して用い
ても差し支えない。さらにはn−ブチルグリシジルエー
テル、バーサティック酸グリシジルエステル、スチレン
オサイド、エチルヘキシルグリシジルエーテル、フェニ
ルグリシジルエーテル、クレジルグリシジルエーテル、
ブチルフェニルグリシジルエーテル等のような通常のエ
ポキシ樹脂の希釈剤として用いられるものがあり、これ
らを混合して用いても差し支えない。
The epoxy resin which satisfies these requirements is not particularly limited, but specific examples include bisphenol A diglycidyl ether, bisphenol F diglycidyl ether and 3,3'-diallylbisphenol A. Diglycidyl ether, polyglycidyl ether obtained by reaction of phenol novolak or cresol novolaks with epichlorohydrin, 1,
6-dihydroxynaphthalenediglycidyl ether,
There are N, N-diglycidylamino-1,3-glycidylphenyl ether and the like, and these may be used alone or in combination. Further, n-butyl glycidyl ether, glycidyl versatate, styrene oside, ethylhexyl glycidyl ether, phenyl glycidyl ether, cresyl glycidyl ether,
Some are used as ordinary diluents for epoxy resins, such as butylphenyl glycidyl ether and the like, and these may be used as a mixture.

【0010】本発明で使用される一般式(1)で示され
るビスマレイミド化合物は、ジアミンと無水マレイン酸
とを反応させて得られるビスマレアミド酸を、更に脱水
閉環イミド化したものである。このビスマレイミドをさ
らに芳香族ジアミンと200℃以下の温度で反応させる
ことによりプレポリマーを得ることが可能である。この
ようにして得られたビスマレイミド及び/又はそのプレ
ポリマーは耐熱性に優れており、2種以上を組み合わせ
て用いることも可能である。
[0010] The bismaleimide compound represented by the general formula (1) used in the present invention is obtained by further dehydrating and ring-closing bismaleamic acid obtained by reacting a diamine with maleic anhydride. A prepolymer can be obtained by further reacting this bismaleimide with an aromatic diamine at a temperature of 200 ° C. or less. The bismaleimide and / or its prepolymer obtained in this way are excellent in heat resistance, and it is possible to use two or more kinds in combination.

【0011】本発明で使用されるビスマレイミド化合物
は、一般式(1)で示されるものであれば特に限定され
るものではないが、具体例を挙げると、N,N’−
(4,4’−ジフェニルメタン)ビスマレイミド、 ビ
ス(3−エチル−4−マレイミドフェニル)メタン、ビ
ス(3,5−ジメチル−4−マレイミドフェニル)メタ
ン、ビス(3,5−ジエチル−4−マレイミドフェニ
ル)メタン、ビス(3−エチル−5−メチル−4−マレ
イミドフェニル)メタン、2,2−ビス〔4−(4−マ
レイミドフェノキシ)フェニル〕プロパン、2,2−ビ
ス〔3−ターシャリーブチル−5−メチル−4−(4−
マレイミドフェノキシ)フェニル〕プロパン、2,6−
ビス〔2−(4−マレイミドフェニル)プロピル〕ベン
ゼン、等があり、これらは単独で用いても混合して用い
ても差し支えない。
The bismaleimide compound used in the present invention is not particularly limited as long as it is represented by the general formula (1).
(4,4'-diphenylmethane) bismaleimide, bis (3-ethyl-4-maleimidophenyl) methane, bis (3,5-dimethyl-4-maleimidophenyl) methane, bis (3,5-diethyl-4-maleimide) Phenyl) methane, bis (3-ethyl-5-methyl-4-maleimidophenyl) methane, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane, 2,2-bis [3-tert-butyl -5-methyl-4- (4-
Maleimidophenoxy) phenyl] propane, 2,6-
Bis [2- (4-maleimidophenyl) propyl] benzene, etc., which may be used alone or in combination.

【0012】本発明の液状樹脂組成物は、成分(A)の
フィラー、成分(B)の液状エポキシ樹脂、成分(C)
のビスマレイミド化合物及び/又はそのプレポリマー、
成分(D)の硬化剤から成るが、成分(B)の液状エポ
キシ100重量部に対して成分(C)は4〜35重量部
であることが好ましく、更に5〜30重量部であること
がより好ましい。260℃での耐リフロー性の向上に
は、高温時の物性低下を抑えるために高耐熱性が必要で
あるが、(C)が(B)に対して4重量部未満の場合、
Tgの上昇、熱時接着強度の改善といった効果が乏しく
なり、また35重量部を越えると著しく粘度が上昇し、
作業性の悪化を招くため好ましくない。
[0012] The liquid resin composition of the present invention comprises a filler of component (A), a liquid epoxy resin of component (B), and a component (C).
A bismaleimide compound and / or a prepolymer thereof,
It is composed of the curing agent of the component (D). The component (C) is preferably 4 to 35 parts by weight, more preferably 5 to 30 parts by weight, based on 100 parts by weight of the liquid epoxy of the component (B). More preferred. In order to improve the reflow resistance at 260 ° C., high heat resistance is required in order to suppress a decrease in physical properties at high temperatures, but when (C) is less than 4 parts by weight with respect to (B),
Effects such as an increase in Tg and an improvement in adhesive strength during heating are poor, and a viscosity exceeding 35 parts by weight significantly increases,
It is not preferable because the workability is deteriorated.

【0013】本発明で使用される硬化剤についてはイオ
ン性不純物が極めて少ないことが好ましい点を除きフェ
ノール系化合物、有機酸無水物、アミン化合物などの使
用が可能であり構造については特に限定されない。また
必要に応じ、3級アミン、イミダゾール類、トリフェニ
ルホスフィン、テトラフェニルホスフィンテトラフェニ
ルボレート等といった硬化促進剤として知られている化
合物を添加することもでき、さらに可とう性付与剤、消
泡剤、カップリング剤等を用いることもできる。
The curing agent used in the present invention can use phenolic compounds, organic acid anhydrides, amine compounds and the like, except that it is preferable that ionic impurities are extremely small, and the structure is not particularly limited. If necessary, compounds known as curing accelerators such as tertiary amines, imidazoles, triphenylphosphine, tetraphenylphosphine tetraphenylborate and the like can also be added. , A coupling agent and the like can also be used.

【0014】本発明の製造方法は例えば各成分を予備混
合した後、3本ロールを用いて混練し、混練後真空下脱
泡し樹脂ペーストを得るなどがある。本発明の液状樹脂
組成物をダイアタッチ材として使用した半導体装置は信
頼性の高い半導体装置である。半導体装置の製作は従来
の公知の方法を用いることが出来る。
The production method of the present invention includes, for example, preliminarily mixing the components, kneading them using a three-roll mill, kneading the mixture, and defoaming under vacuum to obtain a resin paste. A semiconductor device using the liquid resin composition of the present invention as a die attach material is a highly reliable semiconductor device. The semiconductor device can be manufactured by a conventionally known method.

【0015】[0015]

【実施例】以下実施例を用いて本発明を具体的に説明す
る。配合割合は重量部で示す。 <実施例1〜3>粒径1〜30μmで平均粒径3μmの
フレーク状銀粉(以下銀粉)とビスフェノールAとエピ
クロルヒドリンとの反応により得られるジグリシジルビ
スフェノールA(エポキシ当量180、常温で液体、以
下ビスAエポキシ)、クレジルグリシジルエーテル(エ
ポキシ当量185)、ビス(3−エチル−5−メチル−
4−マレイミドフェニル)メタン、フェノールノボラッ
ク(水酸基当量104、軟化点80〜90℃)、ジシア
ンジアミド、2−エチル−4−メチルイミダゾールを第
1表に示す割合で配合し、3本ロールで混練して液状樹
脂組成物を得た。この液状樹脂組成物を真空チャンバー
にて2mmHgで30分間脱泡した後以下の方法により
各種性能を評価した。
The present invention will be specifically described below with reference to examples. The mixing ratio is shown in parts by weight. <Examples 1 to 3> Diglycidylbisphenol A (epoxy equivalent: 180, liquid at room temperature, liquid: Bis-A epoxy), cresyl glycidyl ether (epoxy equivalent: 185), bis (3-ethyl-5-methyl-)
4-maleimidophenyl) methane, phenol novolak (hydroxyl equivalent 104, softening point 80-90 ° C.), dicyandiamide, and 2-ethyl-4-methylimidazole in the proportions shown in Table 1 and kneaded with a three-roll mill. A liquid resin composition was obtained. After defoaming this liquid resin composition in a vacuum chamber at 2 mmHg for 30 minutes, various performances were evaluated by the following methods.

【0016】・粘度:E型粘度計(3°コーン)を用い
25℃、2.5rpmでの値を測定し粘度とした。 ・Tg:4x20x0.4mmの試験片を作製し(硬化
条件150℃60分)引っ張りモードのTMAで測定し
TMA曲線の屈曲点をもってTgとした。(測定長:1
0mm、温度範囲:−100℃〜300℃、昇温速度:
10℃/分)
Viscosity: The viscosity was measured by using an E-type viscometer (3 ° cone) at 25 ° C. and 2.5 rpm to determine the viscosity. Tg: A test piece of 4 × 20 × 0.4 mm was prepared (curing conditions: 150 ° C., 60 minutes), measured by TMA in a tensile mode, and the inflection point of the TMA curve was defined as Tg. (Measurement length: 1
0 mm, temperature range: -100 ° C to 300 ° C, heating rate:
(10 ° C / min)

【0017】・接着強度:6×6mmのシリコンチップ
を液状樹脂組成物を用いて、42合金、銅、銀メッキを
施した銅フレームに各々マウントし、150℃オーブン
中60分間硬化した。硬化後自動マウント強度測定装置
(DAGE PC−2400)を用い260℃での熱時
ダイシェア強度を測定した。また硬化後のサンプルを8
5℃85%72時間吸水処理し260℃での熱時ダイシ
ェア強度を測定した。吸湿処理による保持率を計算し8
0%以上の場合を合格とした。
Adhesive strength: A silicon chip of 6 × 6 mm was mounted on a copper frame plated with 42 alloy, copper and silver using a liquid resin composition, and cured in an oven at 150 ° C. for 60 minutes. After curing, the die shear strength under heat at 260 ° C. was measured using an automatic mount strength measuring device (DAGE PC-2400). The cured sample is 8
Water absorption treatment was carried out at 5 ° C for 85% for 72 hours, and the hot die shear strength at 260 ° C was measured. Calculate the retention by moisture absorption and calculate 8
A case of 0% or more was regarded as a pass.

【0018】・リフロー性:14x20x2.0mmの
QFPフレーム(42合金及び銀メッキを施した銅フレ
ーム、ダイパッド:9.5x9.5mm)に液状樹脂組
成物を用い9x9x0.38mmのシリコンダイをマウ
ント、150℃60分硬化した後、ビフェニル系封止材
(フィラー含有率:88wt%)にてモールドした。こ
のパッケージを85℃85%RHの条件で168時間吸
湿処理後IRリフローを3回通した。リフロー温度は2
60℃以上10秒とし、リフロー処理後のパッケージを
透過型の超音波探傷装置により剥離の観察をおこない、
剥離面積がダイパッド面積の5%以上のものを不良と
し、10パッケージ中の不良パッケージ数をもってリフ
ロー性の指標とした。
Reflowability: A 9 × 9 × 0.38 mm silicon die is mounted using a liquid resin composition on a 14 × 20 × 2.0 mm QFP frame (42 alloy and silver plated copper frame, die pad: 9.5 × 9.5 mm), 150 After curing at 60 ° C. for 60 minutes, the resultant was molded with a biphenyl-based sealing material (filler content: 88 wt%). The package was subjected to IR reflow three times after being subjected to a moisture absorption treatment under conditions of 85 ° C. and 85% RH for 168 hours. Reflow temperature is 2
60 ° C. or more for 10 seconds, the package after the reflow treatment is observed for peeling by a transmission type ultrasonic flaw detector,
Those having a peel area of 5% or more of the die pad area were regarded as defective, and the number of defective packages in 10 packages was used as an index of reflow property.

【0019】<実施例4>ビス(3−エチル−5−メチ
ル−4−マレイミドフェニル)メタンに換えてケルイミ
ドB601(チバ・ガイギー社製)を使用した他は、実
施例1と同様にして液状樹脂組成物を作製し評価した。
Example 4 A liquid was prepared in the same manner as in Example 1 except that kerimide B601 (manufactured by Ciba-Geigy) was used instead of bis (3-ethyl-5-methyl-4-maleimidophenyl) methane. A resin composition was prepared and evaluated.

【0020】<比較例1〜3>第1表に示す配合割合で
実施例1と同様にして液状樹脂組成物を作製し、実施例
1と同様に評価をおこなった。
<Comparative Examples 1 to 3> Liquid resin compositions were prepared in the proportions shown in Table 1 in the same manner as in Example 1, and evaluated in the same manner as in Example 1.

【0021】評価結果を表1に示す。Table 1 shows the evaluation results.

【表1】 比較例3では、液状樹脂組成物の粘度が極めて高く濡れ
拡がり性が悪化したため、良品の試験片およびパッケー
ジを作製することができなかった。
[Table 1] In Comparative Example 3, since the viscosity of the liquid resin composition was extremely high and the wet spreading property was deteriorated, a good test piece and package could not be produced.

【0022】[0022]

【発明の効果】本発明の液状樹脂組成物は260℃の高
温でも金属フレームに対する密着性に優れるため、リフ
ロー温度が260℃になっても半田処理時に剥離、クラ
ックが発生しない従来になかった高信頼性の半導体素子
接着用の液状樹脂組成物である。
The liquid resin composition of the present invention has excellent adhesion to a metal frame even at a high temperature of 260 ° C., so that even when the reflow temperature is 260 ° C., peeling and cracking do not occur during soldering. It is a reliable liquid resin composition for bonding semiconductor elements.

フロントページの続き Fターム(参考) 4J002 CD041 CD051 CD061 CD131 DA079 DF019 DJ019 EJ008 EL026 EU027 EU118 EW018 FD019 FD148 GQ05 5F047 AA11 BA23 BA34 BB11 BB16Continued on the front page F-term (reference) 4J002 CD041 CD051 CD061 CD131 DA079 DF019 DJ019 EJ008 EL026 EU027 EU118 EW018 FD019 FD148 GQ05 5F047 AA11 BA23 BA34 BB11 BB16

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 フィラー(A)、液状エポキシ樹脂
(B)、一般式(1)で示されるビスマレイミド化合物
及び/又はそのプレポリマー(C)、硬化剤(D)から
なり、(C)の量が該液状エポキシ樹脂100重量部に
対して4〜35重量部であることを特徴とする液状樹脂
組成物。 【化1】
1. A composition comprising a filler (A), a liquid epoxy resin (B), a bismaleimide compound represented by the general formula (1) and / or a prepolymer (C) thereof, and a curing agent (D). A liquid resin composition having an amount of 4 to 35 parts by weight based on 100 parts by weight of the liquid epoxy resin. Embedded image
【請求項2】 請求項1記載の液状樹脂組成物をダイア
タッチ材として使用されたことを特徴とする半導体装
置。
2. A semiconductor device using the liquid resin composition according to claim 1 as a die attach material.
JP2000078107A 2000-03-21 2000-03-21 Liquid resin composition and semiconductor device by using the same Pending JP2001261939A (en)

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Cited By (10)

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WO2004069894A1 (en) * 2003-02-06 2004-08-19 Matsushita Electric Works, Ltd. Epoxy resin composition, semiconductor devices having cured layers of the composition, and process for production of the devices
WO2005090510A1 (en) 2004-03-19 2005-09-29 Sumitomo Bakelite Company, Ltd. Resin composition and semiconductor devices made by using the same
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WO2004069894A1 (en) * 2003-02-06 2004-08-19 Matsushita Electric Works, Ltd. Epoxy resin composition, semiconductor devices having cured layers of the composition, and process for production of the devices
US8614270B2 (en) 2004-03-19 2013-12-24 Sumitomo Bakelite Company, Ltd. Resin composition and semiconductor device produced by using the same
US8088308B2 (en) 2004-03-19 2012-01-03 Sumitomo Bakelite Company, Ltd. Resin composition and semiconductor device produced by using the same
WO2005090510A1 (en) 2004-03-19 2005-09-29 Sumitomo Bakelite Company, Ltd. Resin composition and semiconductor devices made by using the same
EP2647686A2 (en) 2004-03-19 2013-10-09 Sumitomo Bakelite Co., Ltd. Resin Composition And Semiconductor Device Produced By Using The Same
US8853312B2 (en) 2004-03-19 2014-10-07 Sumitomo Bakelite Co., Ltd Resin composition and semiconductor device produced by using the same
JP2007262328A (en) * 2006-03-29 2007-10-11 Sumitomo Bakelite Co Ltd Resin composition and semiconductor device prepared by using the resin composition
JP2009155399A (en) * 2007-12-25 2009-07-16 Hitachi Chem Co Ltd Thermosetting resin composition, and prepreg and laminate both made by using the same
US10604641B2 (en) 2007-12-25 2020-03-31 Hitachi Chemical Company, Ltd. Thermosetting resin composition and prepreg and laminate both made with the same
JP2012041386A (en) * 2010-08-12 2012-03-01 Sumitomo Bakelite Co Ltd Thermosetting resin composition for circuit board
JP2014521754A (en) * 2011-07-29 2014-08-28 ナミックス株式会社 Epoxy resin composition for semiconductor encapsulation, semiconductor device using the same, and semiconductor manufacturing method
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CN114196361A (en) * 2021-12-30 2022-03-18 黑龙江省科学院石油化学研究院 Adhesive with high-temperature bonding strength and low viscosity and preparation method thereof
CN114196361B (en) * 2021-12-30 2023-10-20 黑龙江省科学院石油化学研究院 Adhesive with high temperature, high adhesive strength and low viscosity and preparation method thereof

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