JP2001259548A - Method for treating surface of glass substrate - Google Patents

Method for treating surface of glass substrate

Info

Publication number
JP2001259548A
JP2001259548A JP2000126666A JP2000126666A JP2001259548A JP 2001259548 A JP2001259548 A JP 2001259548A JP 2000126666 A JP2000126666 A JP 2000126666A JP 2000126666 A JP2000126666 A JP 2000126666A JP 2001259548 A JP2001259548 A JP 2001259548A
Authority
JP
Japan
Prior art keywords
glass substrate
electrode layer
etched
hydrogen fluoride
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000126666A
Other languages
Japanese (ja)
Inventor
Yuichi Futamura
裕一 二村
Satoshi Yonezawa
諭 米澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Priority to JP2000126666A priority Critical patent/JP2001259548A/en
Publication of JP2001259548A publication Critical patent/JP2001259548A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PROBLEM TO BE SOLVED: To enhance the adhesion of the electrode layer formed on the surface of a glass substrate as a membrane at the time of manufacture of a solar cell. SOLUTION: In the method for treating the surface of the glass substrate, the surface of the glass substrate having the electrode layer formed thereon as a thin film is ultrasonically cleaned before washed with an acid.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、電極層が薄膜形成され
るガラス基板の表面処理方法に関する。
The present invention relates to a method for treating a surface of a glass substrate on which an electrode layer is formed as a thin film.

【0002】[0002]

【従来の技術】一般に、太陽電池を製造するに際して、
ガラス基板の表面に下部電極としての電極層を薄膜形成
する前処理として、パーティクル除去のためにガラス基
板の表面を洗浄する必要がある。
2. Description of the Related Art Generally, when manufacturing a solar cell,
As a pretreatment for forming a thin electrode layer as a lower electrode on the surface of the glass substrate, it is necessary to clean the surface of the glass substrate to remove particles.

【0003】しかして、従来では、酸はガラスを溶解し
てしまうのでガラス基板の洗浄には適さないと考えられ
ており、そのため有機溶剤によってガラス基板の表面を
洗浄するようにしている。
[0003] Conventionally, however, it is considered that the acid dissolves the glass and is not suitable for cleaning the glass substrate. Therefore, the surface of the glass substrate is cleaned with an organic solvent.

【0004】[0004]

【発明が解決しようとする課題】解決しようとする問題
点は、有機溶剤によって洗浄されたガラス基板の表面に
電極層を薄膜形成するのでは、電極層の密着性が弱く、
太陽電池の使用中に電極層がガラス基板から剥離してし
まうということである。
The problem to be solved is that if an electrode layer is formed as a thin film on the surface of a glass substrate washed with an organic solvent, the adhesion of the electrode layer is weak,
This means that the electrode layer peels off from the glass substrate during use of the solar cell.

【0005】[0005]

【課題を解決するための手段】本発明によるガラス基板
の表面処理方法にあっては、基本的に、ガラス基板の表
面を微細にあらして、その上に薄膜形成される電極層の
密着性を向上させるべく、ガラス基板の表面を酸によっ
てエッチングするようにしている。
In the surface treatment method for a glass substrate according to the present invention, basically, the surface of the glass substrate is made fine and the adhesion of the electrode layer formed on the glass substrate is reduced. To improve the surface, the surface of the glass substrate is etched with an acid.

【0006】その際、特に本発明では、ガラス基板の表
面にごみや不純物などが付着して汚染された状態のまま
で酸によってエッチングするのでは、表面に付着してい
る比較的大きなごみなどがエッチングによって除去され
ることなくそのまま残ってその上に薄膜形成される電極
層の密着性が低下してしまうのを防止するべく、前処理
としてガラス基板の表面を超音波洗浄したうえで、その
洗浄された表面を酸によってエッチングするようにして
いる。
In this case, in particular, in the present invention, if the surface of the glass substrate is etched with an acid while the surface is contaminated with dirt and impurities, relatively large debris adhering to the surface is removed. The surface of the glass substrate is ultrasonically cleaned as a pretreatment, and then the cleaning is performed so as to prevent the adhesiveness of the electrode layer which remains as it is without being removed by etching and is formed thereon as a thin film from being reduced. The etched surface is etched with an acid.

【0007】[0007]

【実施例】図1は、本発明によるガラス基板の表面処理
方法を採用したときの、ガラス基板の表面に下部電極と
しての電極層を薄膜形成する前の処理工程を示してい
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a processing step before a thin film of an electrode layer as a lower electrode is formed on the surface of a glass substrate when the method for processing a surface of a glass substrate according to the present invention is adopted.

【0008】ここでは、まず、第1の工程として、ガ
ラス基板の表面を純水で超音波洗浄する。その超音波洗
浄は、周波数20〜850KHz程度の範囲における超
音波によって行われる。
Here, first, as a first step, the surface of the glass substrate is ultrasonically cleaned with pure water. The ultrasonic cleaning is performed by ultrasonic waves in a frequency range of about 20 to 850 KHz.

【0009】次いで、第2の工程として、ガラス基板
をフッ化水素に浸して表面をエッチング効果によって微
細にあらす。
Next, as a second step, the glass substrate is immersed in hydrogen fluoride to make the surface finer by an etching effect.

【0010】次いで、第3の工程として、流水でフッ
化水素を洗い流す。
Next, as a third step, the hydrogen fluoride is washed away with running water.

【0011】最終的に、第4の工程として、IPA
(イソプロピルアルコール)乾燥機でガラス基板を乾燥
する。
Finally, as a fourth step, IPA
(Isopropyl alcohol) Dry the glass substrate with a dryer.

【0012】しかして、ガラス基板の表面を超音波洗浄
することによって表面に付着しているごみや不純物など
のコンタミネーション(表面汚染)が有効に除去され
る。そして、その超音波洗浄されたガラス基板をフッ化
水素に浸すことにより、ガラス表面のパーティクルが除
去されるとともに、ガラス基板の表面がエッチング効果
によりミクロン単位で微細にあれる。
Thus, contamination (surface contamination) such as dust and impurities attached to the surface of the glass substrate is effectively removed by ultrasonic cleaning. Then, by immersing the ultrasonically cleaned glass substrate in hydrogen fluoride, particles on the glass surface are removed, and the surface of the glass substrate is finely divided in microns by an etching effect.

【0013】したがって、ガラス基板の表面が微細にあ
れることにより表面積が増え、その上に薄膜形成される
電極層との接触面積が実質上増大して、両者間の密着性
が向上する。
Therefore, the fine surface of the glass substrate increases the surface area, substantially increases the contact area with the electrode layer formed on the glass substrate, and improves the adhesion between the two.

【0014】いま、例えば、図2に示すように、3mm
の厚さのソーダライムガラスSLGからなるガラス基板
1上に、モリブデンMoによる電極層2を0.5μmの
厚さに薄膜形成するに際して、フッ化水素を用いたガラ
ス基板1の表面のエッチング条件とそのエッチングされ
たガラス基板1の表面に成膜された電極層2の表面状態
とを下記表1に示す。
Now, for example, as shown in FIG.
When an electrode layer 2 of molybdenum Mo is formed to a thickness of 0.5 μm on a glass substrate 1 made of soda-lime glass SLG having a thickness of 0.5 μm, etching conditions for the surface of the glass substrate 1 using hydrogen fluoride and Table 1 below shows the surface state of the electrode layer 2 formed on the etched surface of the glass substrate 1.

【0015】 [0015]

【0016】したがって、この結果からして、実際に太
陽電池を製造するに際して、5%以下の濃度のフッ化水
素を用いて10分以下のエッチングを行わせるのが有効
である。
Therefore, from the above results, it is effective to perform etching for 10 minutes or less using hydrogen fluoride having a concentration of 5% or less when actually manufacturing a solar cell.

【0017】いま、その条件下でフッ化水素によってエ
ッチングを行わせたガラス基板の表面に電極層を薄膜形
成したものと、従来のように有機溶剤によって洗浄した
ガラス基板の表面に電極層を同じように薄膜形成したも
のとの引掻き試験をそれぞれ行って、電極層の剥離荷重
を測定した結果、フッ化水素でエッチングしたサンプル
では553gであったのに対して、有機溶剤で洗浄した
サンプルでは271gであった。
Now, the electrode layer is formed as a thin film on the surface of a glass substrate etched with hydrogen fluoride under the same conditions, and the same electrode layer is formed on the surface of a glass substrate washed with an organic solvent as in the prior art. The peeling load of the electrode layer was measured by performing a scratch test with the thin film formed as described above, and the result was 553 g for the sample etched with hydrogen fluoride and 271 g for the sample washed with the organic solvent. Met.

【0018】図3は、そのときのフッ化水素水でエッチ
ングしたサンプルの引掻き試験の測定結果を示してい
る。また、図4は、そのときの有機溶剤で洗浄したサン
プルの引掻き試験の測定結果を示している。
FIG. 3 shows the measurement results of a scratch test of a sample etched with hydrogen fluoride water at that time. FIG. 4 shows a measurement result of a scratch test of the sample washed with the organic solvent at that time.

【0019】その引掻き試験の測定結果によれば、フッ
化水素でエッチングしたサンプルの方が有機溶剤で洗浄
したサンプルよりも約2倍の密着強度をもっていること
がわかる。
According to the measurement result of the scratch test, it is found that the sample etched with hydrogen fluoride has about twice the adhesion strength as the sample washed with the organic solvent.

【0020】また、純水で超音波洗浄したうえでフッ化
水素でエッチングしたガラス基板の表面と、フッ化水素
でエッチングしただけのガラス基板の表面とにそれぞれ
同条件で電極層を薄膜形成したときの引掻き試験を行っ
て、両サンプルにおける電極層の剥離荷重を測定した結
果、超音波洗浄していないサンプルは410gであった
のに対して、超音波洗浄したサンプルは543gであっ
た。
Further, an electrode layer was formed under the same conditions on the surface of a glass substrate which was ultrasonically cleaned with pure water and then etched with hydrogen fluoride, and the surface of a glass substrate which was only etched with hydrogen fluoride. As a result of performing a scratch test at that time, the peeling load of the electrode layer in both samples was measured. As a result, 410 g of the sample not subjected to ultrasonic cleaning was 543 g of the sample subjected to ultrasonic cleaning.

【0021】図5は、そのときの純水で超音波洗浄した
うえでフッ化水素水でエッチングしたサンプルの引掻き
試験の測定結果を示している。また、図6は、そのとき
のフッ化水素水でエッチングしただけのサンプルの引掻
き試験の測定結果を示している。
FIG. 5 shows a measurement result of a scratch test of a sample which was subjected to ultrasonic cleaning with pure water and then etched with hydrogen fluoride water at that time. FIG. 6 shows a measurement result of a scratch test of a sample which was just etched with hydrogen fluoride water at that time.

【0022】その引掻き試験の測定結果によれば、酸で
ガラス基板の表面をエッチングする前に超音波洗浄を行
った方が、その表面に薄膜形成される電極層との密着性
が飛躍的に向上することがわかる。
According to the measurement results of the scratch test, the ultrasonic cleaning before etching the surface of the glass substrate with an acid dramatically improves the adhesion to the electrode layer formed on the surface of the glass substrate. It turns out that it improves.

【0023】[0023]

【発明の効果】以上、本発明によるガラス基板の表面処
理方法にあっては、電極層が薄膜形成されるガラス基板
の表面を超音波洗浄したうえで、酸によってエッチング
するようにしたもので、そのガラス基板の表面に薄膜形
成される電極層の密着性を低下させる要因となるガラス
基板の表面に付着しているごみや不純物などの汚染物質
やガラス表面のパーティクルを有効に除去することがで
きる。そして、ガラス基板の表面がエッチング効果によ
り微細にあれて表面積が増え、その上に薄膜形成される
電極層との接触面積が実質上増大して両者間の密着性が
向上するという利点を有している。
As described above, in the method for treating the surface of a glass substrate according to the present invention, the surface of the glass substrate on which the electrode layer is formed as a thin film is ultrasonically cleaned and then etched with an acid. It is possible to effectively remove contaminants such as dust and impurities attached to the surface of the glass substrate and particles on the glass surface, which are factors that reduce the adhesion of the electrode layer formed as a thin film on the surface of the glass substrate. . The surface of the glass substrate is fine due to the etching effect and the surface area is increased, and the contact area with the electrode layer formed on the glass substrate is substantially increased, thereby improving the adhesion between the two. ing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明によるガラス基板の表面処理方法を具体
的に実施する際の処理工程の手順を示す図である。
FIG. 1 is a view showing a procedure of a processing step when a method for treating a surface of a glass substrate according to the present invention is specifically carried out.

【図2】ガラス基板上に電極層を成膜したサンプルを示
す図である。
FIG. 2 is a diagram showing a sample in which an electrode layer is formed on a glass substrate.

【図3】フッ化水素水でエッチングしたガラス基板の表
面に電極層を薄膜形成したサンプルの引掻き試験の測定
結果を示す特性図である。
FIG. 3 is a characteristic diagram showing a measurement result of a scratch test of a sample in which an electrode layer is formed as a thin film on a surface of a glass substrate etched with hydrogen fluoride water.

【図4】従来の有機溶剤で洗浄したガラス基板の表面に
電極層を薄膜形成したサンプルの引掻き試験の測定結果
を示す特性図である。
FIG. 4 is a characteristic diagram showing a measurement result of a scratch test of a sample in which an electrode layer is formed as a thin film on a surface of a glass substrate washed with a conventional organic solvent.

【図5】純水で超音波洗浄したうえでフッ化水素水でエ
ッチングしたガラス基板の表面に電極層を薄膜形成した
サンプルの引掻き試験の測定結果を示す特性図である。
FIG. 5 is a characteristic diagram showing measurement results of a scratch test of a sample in which an electrode layer is formed as a thin film on the surface of a glass substrate which has been subjected to ultrasonic cleaning with pure water and then etched with hydrogen fluoride water.

【図6】純水で超音波洗浄せずにフッ化水素水でエッチ
ングしただけのガラス基板の表面に電極層を薄膜形成し
たサンプルの引掻き試験の測定結果を示す特性図であ
る。
FIG. 6 is a characteristic diagram showing a measurement result of a scratch test of a sample in which an electrode layer is formed as a thin film on the surface of a glass substrate which is only etched with hydrogen fluoride water without ultrasonic cleaning with pure water.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 電極層 1 glass substrate 2 electrode layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 電極層が薄膜形成されるガラス基板の表
面を超音波洗浄したうえで、酸によってエッチングする
ようにしたガラス基板の表面処理方法。
1. A method of treating a surface of a glass substrate, wherein the surface of the glass substrate on which an electrode layer is formed as a thin film is subjected to ultrasonic cleaning and then etched with an acid.
【請求項2】 5%以下の濃度のフッ化水素水を用いて
10分以下のエッチングを行わせるようにしたことを特
徴とする請求項1の記載によるガラス基板の表面処理方
法。
2. The surface treatment method for a glass substrate according to claim 1, wherein etching is performed for 10 minutes or less using a hydrogen fluoride solution having a concentration of 5% or less.
JP2000126666A 2000-03-23 2000-03-23 Method for treating surface of glass substrate Pending JP2001259548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000126666A JP2001259548A (en) 2000-03-23 2000-03-23 Method for treating surface of glass substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000126666A JP2001259548A (en) 2000-03-23 2000-03-23 Method for treating surface of glass substrate

Publications (1)

Publication Number Publication Date
JP2001259548A true JP2001259548A (en) 2001-09-25

Family

ID=18636403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000126666A Pending JP2001259548A (en) 2000-03-23 2000-03-23 Method for treating surface of glass substrate

Country Status (1)

Country Link
JP (1) JP2001259548A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020143120A1 (en) * 2019-01-08 2020-07-16 敏实汽车技术研发有限公司 Servo three-dimensional ultrasonic battery pack cleaning system and method for battery pack
CN114951134A (en) * 2022-05-19 2022-08-30 江苏富乐德石英科技有限公司 Full-automatic cleaning equipment for quartz products and using method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347382A (en) * 1986-08-15 1988-02-29 Matsushita Electric Works Ltd Production of nitride ceramic wiring board
JPH0613684A (en) * 1992-06-24 1994-01-21 Sumitomo Metal Mining Co Ltd Method for cleaning crystal
JP2784527B2 (en) * 1992-10-12 1998-08-06 株式会社住友金属エレクトロデバイス Manufacturing method of glass ceramics substrate
JPH11191544A (en) * 1997-12-26 1999-07-13 Sumitomo Electric Ind Ltd Semiconductor substrate and manufacture thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347382A (en) * 1986-08-15 1988-02-29 Matsushita Electric Works Ltd Production of nitride ceramic wiring board
JPH0613684A (en) * 1992-06-24 1994-01-21 Sumitomo Metal Mining Co Ltd Method for cleaning crystal
JP2784527B2 (en) * 1992-10-12 1998-08-06 株式会社住友金属エレクトロデバイス Manufacturing method of glass ceramics substrate
JPH11191544A (en) * 1997-12-26 1999-07-13 Sumitomo Electric Ind Ltd Semiconductor substrate and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020143120A1 (en) * 2019-01-08 2020-07-16 敏实汽车技术研发有限公司 Servo three-dimensional ultrasonic battery pack cleaning system and method for battery pack
CN114951134A (en) * 2022-05-19 2022-08-30 江苏富乐德石英科技有限公司 Full-automatic cleaning equipment for quartz products and using method thereof

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