JP2001247331A - Silica-based optical glass - Google Patents

Silica-based optical glass

Info

Publication number
JP2001247331A
JP2001247331A JP2000058548A JP2000058548A JP2001247331A JP 2001247331 A JP2001247331 A JP 2001247331A JP 2000058548 A JP2000058548 A JP 2000058548A JP 2000058548 A JP2000058548 A JP 2000058548A JP 2001247331 A JP2001247331 A JP 2001247331A
Authority
JP
Japan
Prior art keywords
quartz
optical glass
ppm
period
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000058548A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hayamizu
弘之 速水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Cable Industries Ltd
Original Assignee
Mitsubishi Cable Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd filed Critical Mitsubishi Cable Industries Ltd
Priority to JP2000058548A priority Critical patent/JP2001247331A/en
Publication of JP2001247331A publication Critical patent/JP2001247331A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/14Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415Reactant delivery systems
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00Type of glass produced
    • C03B2201/02Pure silica glass, e.g. pure fused quartz
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00Type of glass produced
    • C03B2201/02Pure silica glass, e.g. pure fused quartz
    • C03B2201/03Impurity concentration specified

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a silica-based optical glass excellent in high-energy resistance in the ultraviolet region, in particular the region of shorter wavelength, among others in the X-ray region. SOLUTION: This silica-based optical glass is obtained by designing the content of group III to group VII elements except Si constructing the quartz structure to be <=100 ppm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は石英系光学ガラス、
特に詳しくは耐高エネルギー性に優れた石英系光学ガラ
スに関する。
TECHNICAL FIELD The present invention relates to a quartz optical glass,
More particularly, the present invention relates to a quartz optical glass having excellent high energy resistance.

【0002】[0002]

【従来の技術】エキシマレーザー装置やステッパー(半
導体露光装置)といった、シリコンウェハーに光を照射
して情報を記録する情報記録装置においては、通常、K
rFエキシマレーザー(波長248nm)等の波長が紫
外線領域等にある強い光が光源として用いられる。この
ため、これらに組み込むためのレンズには耐高エネルギ
ー性に優れたものが要求される。これらの装置に組み込
まれるレンズとしては、プラスチック等に比べて耐高エ
ネルギー性に優れた石英系光学ガラスで形成されたもの
が用いられている。
2. Description of the Related Art In an information recording apparatus such as an excimer laser apparatus or a stepper (semiconductor exposure apparatus) for irradiating a silicon wafer with light to record information, usually, a K is used.
Intense light having a wavelength in the ultraviolet region or the like such as an rF excimer laser (wavelength 248 nm) is used as a light source. For this reason, lenses to be incorporated in these are required to have high energy resistance. As a lens incorporated in these devices, a lens made of quartz optical glass having higher energy resistance than plastics or the like is used.

【0003】更に、最近ではより多くの情報を記録する
ことが求められてきており、将来より短波長の光が利用
される方向にある。例えば、ArFエキシマレーザー
(波長193nm)やF2エキシマレーザー(波長15
7nm)を光源として用いれば従来以上の情報量を記録
することができる。
Further, recently, it has been demanded to record more information, and there is a tendency that light having a shorter wavelength will be used in the future. For example, an ArF excimer laser (wavelength 193 nm) or an F 2 excimer laser (wavelength 15
7 nm) as a light source, it is possible to record more information than before.

【0004】しかしながら、波長が短くなると光は更に
高エネルギー化するため、従来のレンズでは劣化速度が
速く、レンズの頻繁な交換が必要となるため、更なる耐
高エネルギー性の向上が望まれている。
However, as the wavelength becomes shorter, the light becomes higher in energy. Therefore, the deterioration rate of the conventional lens is high, and frequent replacement of the lens is required. I have.

【0005】ところで、従来において石英系光学ガラス
は、主原料となるSiCl4の気体を高温部に通過させ
てCl2を遊離させ、さらに酸化物化させてガラス管の
内壁やガラス棒の外壁に蒸着させて、加熱溶融したもの
を母材として作製されている。このため通常の石英系光
学ガラスではSiO2に加えてOH基やCl元素が一般
に含有されている。
Conventionally, silica-based optical glass has been produced by passing a gas of SiCl 4 as a main raw material through a high-temperature portion to liberate Cl 2 , and further oxidizing the gas to deposit it on the inner wall of a glass tube or the outer wall of a glass rod. It is manufactured using a material melted by heating as a base material. For this reason, ordinary quartz-based optical glass generally contains an OH group and a Cl element in addition to SiO 2 .

【0006】一方、本発明者はすでに特開平5−147
966号公報(特公平8−9489号公報)において、
F元素とOH基とを添加し、Cl元素を殆ど排除するこ
とで耐紫外線特性の向上が図られた光ファイバコアを提
供することに成功している。本発明者はこの結果を踏ま
え、F元素とCl元素とは同族でありながら耐紫外線特
性において全く異なる作用をもたらすことに着目し、石
英系光学ガラスに含有される元素の周期が耐高エネルギ
ー性に大きく関与しているのではないかとの知見に基づ
き、従来にはなかった全く新しい着想に至った。
On the other hand, the present inventor has already disclosed in Japanese Patent Laid-Open No. 5-147.
No. 966 (JP-B-8-9489),
By adding the F element and the OH group and almost eliminating the Cl element, it has succeeded in providing an optical fiber core having improved ultraviolet light resistance. Based on this result, the present inventor has noticed that although the F element and the Cl element are of the same family, they have completely different effects in ultraviolet light resistance, and the period of the element contained in the quartz optical glass is high energy resistance. Based on the knowledge that it is greatly involved in the, it led to a completely new idea that had never existed before.

【0007】[0007]

【発明が解決しようとする課題】本発明の課題は、紫外
線領域、なかでもより短波長の紫外線領域、更にはX線
領域における耐高エネルギー性に優れた石英系光学ガラ
スを提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a silica-based optical glass having excellent energy resistance in the ultraviolet region, especially in the ultraviolet region having a shorter wavelength, and further in the X-ray region. .

【0008】[0008]

【課題を解決するための手段】本発明者は、F元素とC
l元素とが同じハロゲン族でありながら耐紫外線特性に
おいて全く異なる作用をもたらすことに着目した結果、
Cl元素を含む石英がF元素を含む石英よりも紫外線や
γ線等の放射線の耐高エネルギー性の点で著しく劣って
いるのは、電気陰性度の差や原子半径の大きさの差の影
響もあるが、本質的には、Cl元素がエネルギーを受け
て基底状態から励起状態になった時に容易に昇位できる
d軌道ないし4S軌道を持っており、容易に3価、5
価、7価の原子価状態となり、多くのラジカルが形成さ
れるためであると考察するに至った。また、このことか
ら、本発明者は、高エネルギーの照射によって価数に変
化が生じることが、F元素とCl元素との場合に限ら
ず、広く第一周期〜第二周期に属する元素と第三周期〜
第七周期に属する非金属元素との場合において、石英の
耐高エネルギー性に及ぼす働きが大きく異なる理由であ
ると考察するに至った。
Means for Solving the Problems The present inventor has proposed an element F and C
As a result of focusing on the fact that the element l has a completely different action in ultraviolet light resistance characteristics while being the same halogen group,
Quartz containing Cl element is significantly inferior to quartz containing F element in high energy resistance of radiation such as ultraviolet rays and γ-rays because of the difference in electronegativity and the difference in atomic radius. In principle, Cl has a d orbital or 4S orbital that can easily be promoted when the Cl element receives energy and changes from a ground state to an excited state.
It has been considered that this is due to the valence state of valence and valence of 7 and the formation of many radicals. From this, the present inventor has found that the occurrence of a change in valence due to irradiation with high energy is not limited to the case of the F element and the Cl element, but that the element belonging to the first period to the second period and Three cycles ~
It has been considered that the reason why the effect on the high energy resistance of quartz differs greatly in the case of the non-metal element belonging to the seventh period is that.

【0009】本発明者は上記の考察を基に更なる鋭意研
究を行った結果、以下の考えに至った。即ち、Cl元素
に代表される第三周期〜第七周期に属する元素とF元素
に代表される第一周期〜第二周期に属する元素との大き
な違いは、第三周期〜第七周期に属する元素は、γ線
や紫外線等の大きな外部エネルギーを受けて励起状態と
なった時に昇位し易いd軌道を有していること、Si
元素との電気陰性度の差が小さいこと、Si元素又は
O元素との原子半径の差が大きいことのうち、いずれか
の要因を有していることである。この〜の要因のい
ずれかを有するため、第三周期〜第七周期に属する元素
は大きな外部エネルギーを受けると活性化され易く、こ
の場合、第一周期〜第二周期に属する元素に比べて石英
構造を破壊し易いと考えられる。この新知見に基づき、
本発明者は以下に示す本発明を完成させた。
The present inventor has made further studies based on the above considerations, and as a result, has reached the following idea. That is, the major difference between the elements belonging to the third to seventh cycles represented by the Cl element and the elements belonging to the first to second cycles represented by the F element belongs to the third to seventh cycles. The element has a d-orbit that is easily elevated when excited by receiving large external energy such as γ-rays or ultraviolet rays, and Si
One of the factors is that the difference in electronegativity with the element is small and the difference in atomic radius with the Si element or the O element is large. Due to having any of the following factors, the elements belonging to the third to seventh cycles are easily activated when they receive a large external energy, and in this case, the quartz is compared to the elements belonging to the first to second cycles. It is considered that the structure is easily broken. Based on this new knowledge,
The present inventors have completed the present invention described below.

【0010】本発明の石英系光学ガラスは、次の特徴を
有するものである。 (1) 石英構造を構成しているSi元素を除く周期表
の第三周期〜第七周期に属する元素の含有量が100p
pm以下であることを特徴とする石英系光学ガラス。
The quartz optical glass of the present invention has the following features. (1) The content of elements belonging to the third to seventh periods of the periodic table excluding the Si element constituting the quartz structure is 100 p.
pm or less.

【0011】(2) 周期表の第一周期または第二周期
に属する元素のうち少なくとも一以上が含有されている
上記(1)記載の石英系光学ガラス。
(2) The quartz optical glass according to the above (1), which contains at least one of the elements belonging to the first period or the second period of the periodic table.

【0012】(3) 上記含有されている元素の含有量
の合計が10ppm〜10000ppmである上記
(2)記載の石英系光学ガラス。
(3) The quartz optical glass according to (2), wherein the total content of the contained elements is 10 ppm to 10000 ppm.

【0013】(4) 上記含有されている元素の少なく
とも一つがC元素である上記(2)記載の石英系光学ガ
ラス。
(4) The quartz optical glass according to (2), wherein at least one of the contained elements is a C element.

【0014】(5) さらにF元素および/またはOH
基が含有されている上記(4)記載の石英系光学ガラ
ス。
(5) F element and / or OH
The quartz optical glass according to the above (4), which contains a group.

【0015】[0015]

【発明の実施の形態】以下、本発明を詳細に説明する。
本発明の石英系光学ガラスは、周期表における第三周期
〜第七周期に属する元素(石英構造を構成しているSi
元素は除かれる)の含有量が100ppm以下、好まし
くは50ppm以下のものである。このように本発明に
おいては、上述の新知見に基づき、第三周期〜第七周期
に属する元素を実質的に含有させないことによって、紫
外線領域やこれよりも更に短波長の領域(例えばX線
等)の光に対する耐性、即ち耐高エネルギー性の向上を
図っている。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
The quartz optical glass of the present invention includes an element belonging to the third period to the seventh period in the periodic table (Si constituting the quartz structure).
(Excluding elements) is 100 ppm or less, preferably 50 ppm or less. As described above, in the present invention, based on the above-described new findings, by not substantially containing the elements belonging to the third to seventh cycles, the ultraviolet region or a region having a shorter wavelength than this (for example, X-rays or the like) ), Ie, high energy resistance.

【0016】本発明の石英系光学ガラスにおいては、周
期表の第一周期または第二周期に属する元素のうちの少
なくとも一以上を含有させるのが好ましい。但し、石英
構造を構成しているO元素は第二周期に属する元素であ
るが、ここでいう元素からは除かれる。即ち、ここでい
う「周期表の第一周期または第二周期に属する元素」に
は、石英構造を構成していないO元素は含まれる。
The quartz optical glass of the present invention preferably contains at least one of the elements belonging to the first or second period of the periodic table. However, although the O element constituting the quartz structure is an element belonging to the second period, it is excluded from the elements mentioned here. That is, the “element belonging to the first period or the second period of the periodic table” here includes the O element that does not constitute the quartz structure.

【0017】周期表の第一周期または第二周期に属する
元素には、第三周期〜第七周期に属する元素に比べて、
Si元素又はO元素との電気陰性度の差が大きく、
Si元素又はO元素との原子半径の差が小さいという特
徴がある。また、第二周期と第三周期とではエネルギ
ー準位の差が大きく、第二周期に属する元素の電子は第
三周期や第四周期に容易に昇位できない。このため、第
一周期〜第二周期に属する元素を含有させると、γ線や
紫外線等の大きな外部エネルギーによって石英構造の歪
みや結合の切断といった石英構造の欠陥が発生するのを
より抑制でき、耐高エネルギー性の向上を図ることがで
きる。
The elements belonging to the first or second period of the periodic table include, as compared to the elements belonging to the third to seventh periods,
The difference in electronegativity with the Si element or O element is large,
The feature is that the difference in atomic radius from the Si element or the O element is small. Further, the energy level difference between the second period and the third period is large, and electrons of the elements belonging to the second period cannot be easily promoted to the third period or the fourth period. Therefore, when an element belonging to the first period to the second period is contained, it is possible to further suppress the occurrence of defects in the quartz structure such as distortion of the quartz structure or breaking of bonds due to large external energy such as γ-rays or ultraviolet rays, High energy resistance can be improved.

【0018】また、含有させる第一周期または第二周期
に属する元素の合計含有量は、耐高エネルギー性の向上
の点から、10ppm〜10000ppm、特には50
ppm〜5000ppmとするのが好ましい。
The total content of the elements belonging to the first cycle or the second cycle to be contained is 10 ppm to 10000 ppm, particularly 50 ppm, from the viewpoint of improving the high energy resistance.
It is preferable that the content be in the range of ppm to 5000 ppm.

【0019】含有させる元素は、第一周期または第二周
期に属するものであれば特に限定されず、又何種類であ
っても良い。また、水酸基(OH基)のように分子状態
で含有されていても良い。但し、本発明においては含有
させる元素の少なくとも一つはC元素であるのが好まし
い。C元素は他の第一周期〜第二周期に属する元素と比
べてO元素との原子半径の差が非常に小さいので、ラジ
カルを補ってSi−C結合やC−O結合を生じさせるこ
とにより、石英構造の歪みやエネルギー的に弱い部分が
生じるのを抑制でき、更なる耐高エネルギー性の向上を
図ることができる。なお、石英構造形成時に酸素を多量
に導入するとC元素が減少し、Si−O−O−Siの異
常結合を生じ、エネルギー的に弱い部分ができる傾向に
ある。
The element to be contained is not particularly limited as long as it belongs to the first period or the second period, and may be any type. Further, it may be contained in a molecular state like a hydroxyl group (OH group). However, in the present invention, at least one of the elements to be contained is preferably C element. Since the element C has a very small difference in atomic radius from the element O as compared with the other elements belonging to the first and second periods, it supplements the radicals to generate Si—C bonds and C—O bonds. In addition, it is possible to suppress the distortion of the quartz structure and the generation of a weak part in terms of energy, and it is possible to further improve the high energy resistance. When a large amount of oxygen is introduced during the formation of the quartz structure, the amount of C element decreases, and abnormal bonding of Si—O—O—Si tends to occur, and there is a tendency that a portion with low energy is formed.

【0020】更に、本発明においては、C元素に加えて
OH基およびF元素を含有させるのが特に好ましい。O
H基およびF元素を含有させた場合は、ラジカルと反応
して、Si−F、Si−OHといった比較的安定した化
学構造が生じる。そのため、上記のC元素導入による安
定構造との相互作用により、より一層の耐高エネルギー
性の向上を図ることができる。
Further, in the present invention, it is particularly preferable to contain an OH group and an F element in addition to the C element. O
When an H group and an F element are contained, a relatively stable chemical structure such as Si-F or Si-OH is generated by reacting with a radical. Therefore, the interaction with the stable structure by the introduction of the C element can further improve the high energy resistance.

【0021】なお、本発明においては、OH基とF元素
のうちどちらか一方のみをC元素と共に含有させても良
い。この場合は、C元素と組み合わされたときに、より
効果的であるF元素を含有させるのが好ましい態様とな
る。F元素は、後述するように石英構造の主原料である
ケイ素化合物に対して、フッ化化合物、例えばSi元素
以外の第三周期の元素を含まないSiF4、CF4、C2
6、BF3等を使用することで含有させることができ
る。但し、第三周期〜第七周期に属する元素を含むフッ
化化合物、例えばSF6、PF6等を使用すると、第三周
期〜第七周期に属する元素の含有量を増加させることに
なるので好ましくない。
In the present invention, only one of the OH group and the F element may be contained together with the C element. In this case, it is a preferable embodiment to include the more effective F element when combined with the C element. The F element is, as described later, a silicon compound, which is a main raw material of the quartz structure, and a fluorinated compound, for example, SiF 4 , CF 4 , C 2 containing no third-cycle element other than the Si element.
It can be contained by using F 6 , BF 3 or the like. However, it is preferable to use a fluorinated compound containing an element belonging to the third period to the seventh period, for example, SF 6 , PF 6 or the like, because the content of the element belonging to the third period to the seventh period is increased. Absent.

【0022】本発明の石英系光学ガラスに含有される元
素(石英構造を構成しているSi元素及びO元素を除
く)の含有量の計測は、既知の分析方法を利用して行う
ことができる。具体的には、蛍光X線分析法、イオン選
択性電極分析法、フーリエ変換赤外分光計を用いた分析
法等の分析方法が挙げられ、各元素に応じて適切な方法
を選択して行えば良い。
The content of the elements (excluding the Si element and the O element constituting the quartz structure) contained in the quartz optical glass of the present invention can be measured by using a known analysis method. . Specific examples include X-ray fluorescence analysis, ion-selective electrode analysis, and analysis using a Fourier transform infrared spectrometer, and the like. Good.

【0023】次に、本発明の石英系光学ガラスの作製方
法について説明する。本発明の石英系光学ガラスは、例
えばMCVD法、VAD法といった、主原料のケイ素化
合物とドープ剤とを加熱し、合成シリカ微粒子を堆積さ
せて多孔質シリカ焼結体を形成し、これを加熱溶融して
ガラス化する方法や、直接ガラス化するプラズマ法を利
用して作製できる。
Next, a method for producing the quartz optical glass of the present invention will be described. In the quartz optical glass of the present invention, a porous silicon sintered body is formed by heating a silicon compound as a main raw material and a dopant such as MCVD and VAD, depositing synthetic silica fine particles, and heating the resultant. It can be manufactured using a method of melting and vitrifying or a plasma method of directly vitrifying.

【0024】本発明において、ケイ素化合物及びドープ
剤の選択や、MCVD法、VAD法、プラズマ法といっ
た方法の選択は、第三周期〜第七周期に属する元素、特
に非金属の第三周期〜第七周期に属する元素の含有量が
100ppm以下となり、且つ、第一周期から第二周期
に属する所望の元素が含有されるように行えば良い。例
えば、C元素およびF元素が含有された本発明の石英系
光学ガラスを作製するのであれば、ケイ素化合物として
メトキシシラン(Si(OCH34)、エトキシシラン
(Si(OC254)又はメチルトリメトキシシラン
(CH3Si(OCH33)を用い、ドープ剤としては
四フッ化ケイ素(SiF4)等のフッ素化合物を用いれ
ば良い。さらにこの場合、加熱に酸水素炎を用いるVA
D法を採用すれば、OH基を含有させることもできる。
In the present invention, the selection of the silicon compound and the dopant and the selection of the method such as the MCVD method, the VAD method, and the plasma method are performed by selecting the elements belonging to the third period to the seventh period, particularly the third period to the non-metallic period. What is necessary is just to perform so that the content of the element belonging to seven periods may be 100 ppm or less, and the desired element belonging to the first period to the second period may be contained. For example, when producing the quartz optical glass of the present invention containing the C element and the F element, methoxysilane (Si (OCH 3 ) 4 ) and ethoxysilane (Si (OC 2 H 5 ) 4 as silicon compounds. ) Or methyltrimethoxysilane (CH 3 Si (OCH 3 ) 3 ), and a fluorine compound such as silicon tetrafluoride (SiF 4 ) may be used as a dopant. Further, in this case, VA using an oxyhydrogen flame for heating
If the method D is adopted, an OH group can be contained.

【0025】本発明の石英系光学ガラスは、石英系ロッ
ドや石英系レンズの材料として好適に用いることができ
る。特に本発明の石英系光学ガラスで形成した石英系レ
ンズは従来のものに比べて極めて耐高エネルギー性に優
れているため、エキシマレーザー装置やステッパーのレ
ンズとして用いれば従来に比べてレンズ交換サイクルを
長くすることができ、これら装置の運用コストを下げる
ことができる。
The quartz optical glass of the present invention can be suitably used as a material for a quartz rod or a quartz lens. In particular, since the quartz lens formed of the quartz optical glass of the present invention has extremely high energy resistance as compared with the conventional lens, if it is used as a lens of an excimer laser device or a stepper, the lens exchange cycle will be shorter than before. It can be lengthened, and the operating costs of these devices can be reduced.

【0026】[0026]

【実施例】以下、実施例を挙げて本発明を具体的に示
す。 実施例1 ケイ素化合物としてメチルトリメトキシシラン(CH3
Si(OCH33)、フッ素化合物として四フッ化ケイ
素(SiF4)を用いて、水素ガス700Nl/時、酸
素ガス800Nl/時、メチルトリメトキシシラン50
0g/時、四フッ化ケイ素0.44g/時の条件で供給
して、これらを燃焼反応させた。生成した合成シリカ微
粒子を合成石英製基体上に堆積させ、外径60mm×全
長230mmの多孔質シリカ焼結体を得た。次に、この
焼結体をヘリウムガス雰囲気の大気圧下で1600℃に
て加熱して、外径30mm、長さ120mmのロッド状
に成形した。
EXAMPLES The present invention will be specifically described below with reference to examples. Example 1 As a silicon compound, methyltrimethoxysilane (CH 3
Si (OCH 3 ) 3 ), silicon tetrafluoride (SiF 4 ) as a fluorine compound, hydrogen gas 700 Nl / hour, oxygen gas 800 Nl / hour, methyltrimethoxysilane 50
These were supplied under the conditions of 0 g / hour and 0.44 g / hour of silicon tetrafluoride, and were reacted by combustion. The generated synthetic silica fine particles were deposited on a synthetic quartz substrate to obtain a porous silica sintered body having an outer diameter of 60 mm and a total length of 230 mm. Next, this sintered body was heated at 1600 ° C. under the atmospheric pressure of a helium gas atmosphere to form a rod having an outer diameter of 30 mm and a length of 120 mm.

【0027】上記で得られた石英系ロッド母材について
成分分析をおこなったところ、第三周期〜第七周期に属
する元素の含有量は0ppmであった。なお、第三周期
〜第七周期に属する元素の測定は、蛍光X線分析法や放
射化分析法、ICP発光分光分析法によって行った。
When the component analysis was performed on the quartz rod preform obtained above, the content of the elements belonging to the third to seventh cycles was 0 ppm. The elements belonging to the third to seventh cycles were measured by X-ray fluorescence analysis, activation analysis, or ICP emission spectroscopy.

【0028】一方、第一周期から第二周期に属する元素
の含有量は、C元素が60ppm、OH基が150pp
m、F元素が1200ppmであった。なお、C元素の
測定は燃焼−赤外線吸収分析法によって、F元素の測定
はイオン選択性電極分析法によって行った。OH基の測
定は赤外分光計を用いて波長2.73nmにおける透過
率T1を測定し、下記の式1から吸収損失を求めること
によって行った。T0はOH基含有量が0ppmである
場合の透過率、Lは上記石英系ロッド母材の厚さであ
る。
On the other hand, the content of the elements belonging to the first and second cycles is 60 ppm for the C element and 150 pp for the OH group.
m and F elements were 1200 ppm. The element C was measured by combustion-infrared absorption analysis, and the element F was measured by ion-selective electrode analysis. The measurement of the OH group was performed by measuring the transmittance T 1 at a wavelength of 2.73 nm using an infrared spectrometer, and calculating the absorption loss from the following equation 1. T 0 is the transmittance when the OH group content is 0 ppm, and L is the thickness of the quartz rod base material.

【0029】[0029]

【数1】 (Equation 1)

【0030】次に、上記で得られた石英系ロッド母材を
2100℃で加熱して線引きし、外径200μm、長さ
2000mmのファイバー状に成形して、紫外線及びγ
線による劣化特性についての試験を行った。
Next, the quartz rod preform obtained above was heated at 2100 ° C., drawn, formed into a fiber having an outer diameter of 200 μm and a length of 2000 mm, and irradiated with ultraviolet light and γ.
A test for deterioration characteristics due to wire was conducted.

【0031】紫外線劣化特性についての試験は、UV光
源(重水素ランプ)から紫外線(波長215nm)を1
0時間照射して行った。次に、215nmにおける透過
率[%]を下記の式2から算出した。式2における出射
光パワーの測定は瞬間測定マルチシステムを用いて行っ
た。結果を表1に示す。
In the test for the ultraviolet ray deterioration characteristic, one ultraviolet ray (wavelength: 215 nm) was applied from a UV light source (deuterium lamp).
Irradiation was performed for 0 hour. Next, the transmittance [%] at 215 nm was calculated from Equation 2 below. The measurement of the output light power in Equation 2 was performed using an instantaneous measurement multisystem. Table 1 shows the results.

【0032】[0032]

【数2】 (Equation 2)

【0033】γ線劣化特性についての試験は、上記で得
られたファイバーを長さ20mmに切断し、切断したも
の数百本を束ねて供試して、γ線を1×106R/hの
条件で50時間照射して行った。次に、電子スピン共鳴
装置(ESR)によりγ線照射後に生成した石英主欠陥
量(Si(E‘))[×1015/g]を測定した。この
石英主欠陥量は、値が大きいほど紫外線(215nm)
照射によって劣化しやすいことを示している。結果を表
1に示す。
In the test for the γ-ray deterioration characteristics, the fiber obtained above was cut into a length of 20 mm, and several hundred cut fibers were bundled and tested, and the γ-ray was irradiated at 1 × 10 6 R / h. Irradiation was performed for 50 hours under the conditions. Next, the amount of main quartz defects (Si (E ′)) generated after irradiation of γ-rays (× 10 15 / g) was measured by an electron spin resonance apparatus (ESR). The larger the value of this quartz main defect amount, the more ultraviolet rays (215 nm)
This indicates that the material is easily deteriorated by irradiation. Table 1 shows the results.

【0034】実施例2 四フッ化ケイ素の供給条件を0.60g/時とした以外
は実施例1と同様にして石英系ロッド母材を作製した。
本例で作製された石英系ロッド母材の成分は、第三周期
〜第七周期に属する元素の含有量が0ppm、C元素の
含有量が40ppm、OH基の含有量が100ppm、
F元素の含有量が1500ppmであった。次に、上記
で得られた石英系ロッド母材も実施例1同様に加熱して
線引きし、ファイバー状に成形して、紫外線及びγ線に
よる劣化特性についての試験を行った。結果を表1に示
す。
Example 2 A quartz rod base material was prepared in the same manner as in Example 1 except that the supply condition of silicon tetrafluoride was changed to 0.60 g / hour.
The components of the quartz rod preform manufactured in this example have a content of elements belonging to the third to seventh cycles of 0 ppm, a content of the C element of 40 ppm, a content of the OH group of 100 ppm,
The content of the F element was 1500 ppm. Next, the quartz rod preform obtained above was heated and drawn in the same manner as in Example 1, formed into a fiber shape, and subjected to a test for deterioration characteristics due to ultraviolet rays and γ rays. Table 1 shows the results.

【0035】実施例3 四フッ化ケイ素の供給条件を0.80g/時とした以外
は実施例1と同様にして石英系ロッド母材を作製した。
本例で作製された石英系ロッド母材の成分は、第三周期
〜第七周期に属する元素の含有量が0ppm、C元素の
含有量が100ppm、OH基の含有量が80ppm、
F元素の含有量が2000ppmであった。次に、上記
で得られた石英系ロッド母材も実施例1同様に加熱して
線引きし、ファイバー状に成形して、紫外線及びγ線に
よる劣化特性についての試験を行った。結果を表1に示
す。
Example 3 A quartz rod base material was produced in the same manner as in Example 1 except that the supply condition of silicon tetrafluoride was changed to 0.80 g / hour.
The components of the quartz rod preform prepared in this example have a content of elements belonging to the third to seventh cycles of 0 ppm, a content of the C element of 100 ppm, and a content of the OH group of 80 ppm,
The content of the F element was 2000 ppm. Next, the quartz rod preform obtained above was heated and drawn in the same manner as in Example 1, formed into a fiber shape, and subjected to a test for deterioration characteristics due to ultraviolet rays and γ rays. Table 1 shows the results.

【0036】比較例1 ケイ素化合物として四塩化ケイ素(SiCl4)を用
い、四塩化ケイ素の供給条件を600g/時とした以外
は実施例1と同様にして石英系ロッド母材を作製した。
本例で作製された石英系ロッド母材の成分は、第三周期
〜第七周期に属するCl元素の含有量が140ppm、
OH基の含有量が550ppmであった。なお、実施例
1で含有されていたC元素やF元素は含有されていなか
った。次に、上記で得られた石英系ロッド母材も実施例
1同様に加熱して線引きし、ファイバー状に成形して、
紫外線及びγ線による劣化特性についての試験を行っ
た。結果を表1に示す。
Comparative Example 1 A quartz rod base material was produced in the same manner as in Example 1 except that silicon tetrachloride (SiCl 4 ) was used as a silicon compound and the supply condition of silicon tetrachloride was changed to 600 g / hour.
The component of the quartz rod preform manufactured in this example has a Cl element content of 140 ppm belonging to the third to seventh cycles,
The OH group content was 550 ppm. In addition, the C element and the F element contained in Example 1 were not contained. Next, the quartz rod preform obtained above was also heated and drawn in the same manner as in Example 1, and formed into a fiber shape.
A test for deterioration characteristics due to ultraviolet rays and γ rays was performed. Table 1 shows the results.

【0037】比較例2 水素ガスの供給条件を800Nl/時、酸素ガスの供給
条件を900Nl/時、四塩化ケイ素の供給条件を80
0g/時とした以外は比較例1と同様にして石英系ロッ
ド母材を作製した。本例で作製された石英系ロッド母材
の成分は、第三周期〜第七周期に属するCl元素の含有
量が160ppm、OH基の含有量が630ppmであ
った。なお、実施例1で含有されていたC元素やF元素
は含有されていなかった。次に、上記で得られた石英系
ロッド母材も実施例1同様に加熱して線引きし、ファイ
バー状に成形して、紫外線及びγ線による劣化特性につ
いての試験を行った。結果を表1に示す。
COMPARATIVE EXAMPLE 2 A supply condition of hydrogen gas was 800 Nl / hour, a supply condition of oxygen gas was 900 Nl / hour, and a supply condition of silicon tetrachloride was 80 Nl / hour.
A quartz rod base material was produced in the same manner as in Comparative Example 1 except that the amount was 0 g / hour. In the components of the quartz rod preform manufactured in this example, the content of the Cl element belonging to the third to seventh cycles was 160 ppm, and the content of the OH group was 630 ppm. In addition, the C element and the F element contained in Example 1 were not contained. Next, the quartz rod preform obtained above was heated and drawn in the same manner as in Example 1, formed into a fiber shape, and subjected to a test for deterioration characteristics due to ultraviolet rays and γ rays. Table 1 shows the results.

【0038】比較例3 四塩化ケイ素の供給条件を450g/時とした以外は比
較例1と同様にして石英系ロッド母材を作製した。本例
で作製された石英系ロッド母材の成分は、第三周期〜第
七周期に属するCl元素の含有量が110ppm、OH
基の含有量が550ppmであった。なお、実施例1で
含有されていたC元素やF元素は含有されていなかっ
た。次に、上記で得られた石英系ロッド母材も実施例1
同様に加熱して線引きし、ファイバー状に成形して、紫
外線及びγ線による劣化特性についての試験を行った。
結果を表1に示す。
Comparative Example 3 A quartz rod base material was produced in the same manner as in Comparative Example 1 except that the supply condition of silicon tetrachloride was changed to 450 g / hour. The components of the quartz rod base material manufactured in this example have a Cl element content of 110 ppm belonging to the third to seventh cycles, and OH
The group content was 550 ppm. In addition, the C element and the F element contained in Example 1 were not contained. Next, the quartz rod base material obtained above was also used in Example 1.
Similarly, it was heated and drawn, formed into a fiber shape, and tested for deterioration characteristics due to ultraviolet rays and γ-rays.
Table 1 shows the results.

【0039】[0039]

【表1】 [Table 1]

【0040】評価 上記の表1から分かるように本発明の石英系光学ガラス
を用いれば、紫外線やγ線に対する劣化特性の向上を図
ることができるのが分かる。
Evaluation As can be seen from Table 1 above, it is understood that the use of the quartz optical glass of the present invention can improve the deterioration characteristics against ultraviolet rays and γ rays.

【0041】[0041]

【発明の効果】以上のように本発明を用いれば、紫外線
等の短波長の光による照射を受けても劣化しにくい石英
系光学ガラスを得ることができる。特に本発明の石英系
光学ガラスをエキシマレーザーやステッパー用のレンズ
として用いれば、これらの装置の運用コスト低減を図る
こともできる。
As described above, according to the present invention, it is possible to obtain a quartz optical glass which is hardly deteriorated even when irradiated with light having a short wavelength such as ultraviolet rays. In particular, if the quartz optical glass of the present invention is used as a lens for an excimer laser or a stepper, the operation costs of these devices can be reduced.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 石英構造を構成しているSi元素を除く
周期表の第三周期〜第七周期に属する元素の含有量が1
00ppm以下であることを特徴とする石英系光学ガラ
ス。
1. The content of elements belonging to the third to seventh periods of the periodic table excluding the Si element constituting the quartz structure is 1
A quartz optical glass characterized by being at most 00 ppm.
【請求項2】 周期表の第一周期または第二周期に属す
る元素のうち少なくとも一以上が含有されている請求項
1記載の石英系光学ガラス。
2. The quartz optical glass according to claim 1, wherein at least one of the elements belonging to the first period or the second period of the periodic table is contained.
【請求項3】 上記含有されている元素の含有量の合計
が10ppm〜10000ppmである請求項2記載の
石英系光学ガラス。
3. The quartz optical glass according to claim 2, wherein the total content of the contained elements is 10 ppm to 10000 ppm.
【請求項4】 上記含有されている元素の少なくとも一
つがC元素である請求項2記載の石英系光学ガラス。
4. The quartz optical glass according to claim 2, wherein at least one of the contained elements is a C element.
【請求項5】 さらにF元素および/またはOH基が含
有されている請求項4記載の石英系光学ガラス。
5. The quartz optical glass according to claim 4, further comprising an F element and / or an OH group.
JP2000058548A 2000-03-03 2000-03-03 Silica-based optical glass Pending JP2001247331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000058548A JP2001247331A (en) 2000-03-03 2000-03-03 Silica-based optical glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000058548A JP2001247331A (en) 2000-03-03 2000-03-03 Silica-based optical glass

Publications (1)

Publication Number Publication Date
JP2001247331A true JP2001247331A (en) 2001-09-11

Family

ID=18579129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000058548A Pending JP2001247331A (en) 2000-03-03 2000-03-03 Silica-based optical glass

Country Status (1)

Country Link
JP (1) JP2001247331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002060248A (en) * 2000-08-10 2002-02-26 Mitsubishi Cable Ind Ltd Quartz-base optical fiber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002060248A (en) * 2000-08-10 2002-02-26 Mitsubishi Cable Ind Ltd Quartz-base optical fiber

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