JP2001244546A - Method of manufacturing semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor light emitting device having a plurality of semiconductor light emitting elements which makes it possible to form current constriction structures in a simple and optimized condition. SOLUTION: On a substrate, a first laminate ST1 composed of at least a first conductive first clad layer, a first active layer and a second conductive second clad layer is formed by laminating in a semiconductor light emitting element forming region, and a second laminate ST2 composed of at least a first conductive third clad layer, a second active layer and a second conductive fourth clad layer is formed by laminating in a second semiconductor light emitting element forming region. Next, a first protective film MS1 and a second protective film MS2 for protecting current injection regions are formed in layers above the first laminate and the second laminate, respectively. Next, in the second laminate a current constriction structure (RD2) is formed protecting the first laminate. Next, in the first laminate a current constriction structure (41a) is formed protecting the second laminate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device having a plurality of semiconductor light emitting elements, and more particularly to a method for manufacturing a semiconductor light emitting device having a plurality of semiconductor light emitting elements for emitting a plurality of lights having different wavelengths. About the method.

[0002]

2. Description of the Related Art Generally, CDs (compact discs),
Reads (reproduces) information recorded on an optical recording medium (hereinafter, also referred to as an optical disk) for optically recording information such as a DVD (digital video disk) or an MD (mini disk), or writes (records) information on these. ) (Hereinafter also referred to as an optical disk device) includes an optical pickup device.

In the above-mentioned optical disk device and optical pickup device, generally, when the type of optical disk (optical disk system) is different, laser beams having different wavelengths are used. For example, a laser beam having a wavelength of 780 nm is used for reproducing a CD, and a laser beam having a wavelength of 650 nm is used for reproducing a DVD.

In a situation where the wavelength of the laser beam varies depending on the type of the optical disk as described above, a compatible optical pickup device which enables reproduction of a CD by an optical disk device for a DVD, for example, is desired. CD and D above
A monolithic laser diode having a laser diode for CD (emission wavelength of 780 nm) and a laser diode for DVD (emission wavelength of 650 nm) suitable for forming a compatible optical pickup device capable of reproducing VD mounted on one chip. Is being developed.

FIG. 16 is a sectional view of a monolithic laser diode 114a according to the above-mentioned conventional example. As the first laser diode LD1, for example, n made of GaAs
An n-type buffer layer 31 made of GaAs, for example, an n-type clad layer 3 made of AlGaAs
2, an active layer 33, for example, a p-type cladding layer 34 made of AlGaAs, for example, a p-type cap layer 3 made of GaAs
5 are stacked to form a first stacked body ST1. p
A stripe is formed as a region 41a insulated from the surface of the mold cap layer 35 to a depth in the middle of the p-type cladding layer 34 to form a gain guide type current confinement structure.

On the other hand, as the second laser diode LD2, an n-type buffer layer 31 made of, for example, GaAs, an n-type buffer layer 36 made of, for example, InGaP, an n-type cladding layer 37 made of, for example, AlGaInP, The layer 38, for example, a p-type cladding layer 39 made of AlGaInP, for example, a p-type cap layer 40 made of GaAs is stacked to form a second stacked body ST2. A stripe is formed as a region 41b insulated from the surface of the p-type cap layer 40 to a depth in the middle of the p-type cladding layer 39 to form a gain guide type current confinement structure.

In the first laser diode LD1 and the second laser diode LD2, a p-electrode 42 is formed on the p-type cap layer (35, 40) and an n-electrode 43 is formed on the n-type substrate 30. ing.

In the monolithic laser diode 114a having the above structure, the distance between the laser light emitting portion of the first laser diode LD1 and the laser light emitting portion of the second laser diode LD2 is, for example, in a range of about 200 μm or less (100 μm or less).
Degree). From each of the laser beam emitting units, for example, a laser beam having a wavelength of 780 nm band and a laser beam having a wavelength of 650 nm band are emitted in substantially the same direction (substantially parallel) as the substrate.

The above monolithic laser diode 11
The method for forming 4a will be described. First, FIG.
As shown in FIG. 1, for example, by an epitaxial growth method such as a metalorganic vapor phase epitaxial growth method (MOVPE),
For example, on an n-type substrate 30 made of GaAs, for example, Ga
N-type buffer layer 31 made of As, for example, AlGaAs
An n-type cladding layer 32 comprising an active layer (oscillation wavelength 780)
nm multiple quantum well structure) 33, for example, a p-type cladding layer 34 composed of AlGaAs, for example, p composed of GaAs.
The mold cap layers 35 are sequentially stacked.

Next, as shown in FIG. 17B, a region left as the first laser diode LD1 is protected by a resist film (not shown), and sulfuric acid-based non-selective etching and
The first laser diode L is formed by wet etching (EC4) such as hydrofluoric acid-based AlGaAs selective etching.
The stacked body up to the n-type cladding layer 32 is removed in a region other than the region D1.

Next, as shown in FIG. 1C, an n-type buffer layer 36 made of, for example, InGaP is formed on the n-type buffer layer 31 by an epitaxial growth method such as a metal organic chemical vapor deposition (MOVPE). For example, an n-type cladding layer 37 made of AlGaInP, an active layer (a multiple quantum well structure having an oscillation wavelength of 650 nm) 38, a p-type cladding layer 39 made of AlGaInP, and a p-type cap layer 40 made of GaAs, for example, are sequentially stacked.

Next, as shown in FIG. 18D, a region left as the second laser diode LD2 is protected by a resist film (not shown), and sulfuric acid-based cap etching and phosphate-based hydrochloric acid-based quaternary selective etching are performed. The n-type buffer layer 3 in a region other than the second laser diode LD2 region by wet etching (EC5) such as hydrochloric acid-based separation etching.
6 to remove the first stacked body ST1 for the first laser diode and the second stacked body ST1 for the second laser diode.
The stack ST2 is separated.

Next, as shown in FIG. 19 (e), a resist film is formed in a pattern on the upper layer of the first laminate and the second laminate by a photolithography step so as to protect a portion serving as a current injection region. And a mask layer (MS1, MS
2) is formed respectively. Next, the mask layer (MS
1, MS2) as a mask, an impurity D2 is introduced by ion implantation or the like into a region other than a portion to be a current injection region, and is introduced from the surface of the p-type cap layer (35, 40) to the middle of the p-type cladding layer (34, 39). (41a, 41b) which are insulated to the depth of, and are formed as a stripe having a gain guide type current confinement structure.

Next, as shown in FIG. 19 (f), the p-type cap layer (3
5, 40) to connect to p such as Ti / Pt / Au
The n-type electrode 4 such as AuGe / Ni / Au is formed so as to connect to the n-type substrate 30.
Form 3

Thereafter, through a pelletizing step, a monolithic laser diode 114a in which the desired first laser diode LD1 and second laser diode LD2 are mounted on one chip as shown in FIG. 16 can be obtained.

FIG. 20 is a sectional view of a monolithic laser diode 114b according to another conventional example. Substantially the same as the monolithic laser diode 114a shown in FIG.
In the first stacked body ST1 and the second stacked body ST2 constituting the first and second laser diodes LD2, respectively,
A ridge shape in which a region excluding a portion serving as a current injection region is removed from the surface of the p-type cap layer (35, 40) to a depth in the middle of the p-type cladding layer (34, 39), and the current injection region protrudes in a convex shape. (RD1, RD2) is different in that a stripe having a gain guide type current confinement structure is formed. By controlling the ridge depth and shape, an index guide or a self-pulsation type can be used.

An insulating film 44 such as silicon oxide is formed so as to cover the first laser diode LD1 and the second laser diode LD2. The insulating film 44 includes
A contact opening is formed to expose the p-type cap layer (35, 40).
40) has a p-electrode 42, and the n-type substrate 30 has an n-electrode 43.
Are connected to each other.

The monolithic laser diode 114b having the above-described structure is, for example, 7 mm from each laser beam emitting portion, similarly to the monolithic laser diode 114 shown in FIG.
A laser beam L1 having a wavelength in the 80 nm band and a laser beam L2 having a wavelength in the 650 nm band are emitted in substantially the same direction (substantially parallel) as being parallel to the substrate.

The above monolithic laser diode 11
The method of forming 4b will be described. First, FIG.
Until the step of forming the first stacked body ST1 for the first laser diode and the second stacked body ST2 for the second laser diode, the monolithic laser diode 11 shown in FIG.
This is the same as the process up to the step shown in FIG.

Next, as shown in FIG. 21B, a resist film is formed in a pattern on the upper layer of the first laminate and the second laminate by a photolithography step so as to protect a portion serving as a current injection region. And a mask layer (MS1, MS
2) is formed respectively. Next, the mask layer (MS
1, MS2) as a mask, an etching process EC6 is performed while protecting a portion serving as a current injection region, and a p-type cladding layer (34, 3) is removed from the surface of the p-type cap layer (35, 40).
9) Excluding the portion which becomes the current injection region up to the halfway depth, the current injection region is processed into a ridge shape (RD1, RD2) in which the current injection region protrudes to form a gain guide type current constriction structure. And

Next, as shown in FIG. 22C, for example, CVD (Chemical Vapor Deposi).
A silicon oxide is deposited on the entire surface by a (tion) method, an insulating film 44 is formed, and a contact opening is formed so as to expose the p-type cap layers (35, 40).

Next, as shown in FIG. 22D, Ti / Pt is connected to the p-type cap layer (35, 40).
/ Au or other p-type electrode 42, while n-type substrate 3
An n-type electrode 43 such as AuGe / Ni / Au is formed so as to be connected to zero.

Thereafter, through a pelletizing step, a monolithic laser diode 114b in which the desired first laser diode LD1 and second laser diode LD2 are mounted on one chip as shown in FIG. 20 can be obtained.

[0024]

However, in the conventional method for manufacturing a monolithic laser diode, it is difficult to form a current confinement structure optimized for both the first laser diode and the second laser diode. Had become. This is due to the following reasons.

In the case of the monolithic laser diode shown in FIG. 16, in the step shown in FIG. 19E, an impurity D2 is introduced by ion implantation or the like using the mask layers (MS1, MS2) as a mask, and a p-type cap layer ( 35,4
0) forming insulated regions (41a, 41b) from the surface to a depth in the middle of the p-type cladding layers (34, 39);
A stripe having a gain guide type current confinement structure is formed, and the current confinement structures of the first laser diode and the second laser diode are formed simultaneously.

In the case of the monolithic laser diode shown in FIG. 20, in the step shown in FIG. 21B, an etching process EC6 is performed using the mask layers (MS1, MS2) as a mask to form a p-type cap layer (35, 40). A region other than a portion serving as a current injection region is removed from the surface to a depth in the middle of the p-type cladding layers (34, 39), and the current injection region is processed into a ridge shape (RD1, RD2) having a protruding projection, and a gain is obtained. A stripe having a guide type current constriction structure is formed, and the current confinement structures of the first laser diode and the second laser diode are formed at the same time.

Laser diodes having different structures and compositions so as to emit different wavelengths as described above, for example, AlGa
Generally, the optimum ion implantation conditions or etching conditions for forming a current confinement structure are different between an As-based laser diode and an AlGaInP-based laser diode. Therefore, if the ion implantation condition or the etching condition is optimized for the current confinement structure of one laser diode, the other laser diode is not optimized.

In order to optimally form the current confinement structures of the first laser diode and the second laser diode, for example, when forming the current confinement structure of the AlGaAs-based first laser diode, the AlGaInP-based second Protect the laser diode side with a resist film, etc.
A stripe mask is formed for the laser diode, and a current confinement structure of the first laser diode is formed by ion implantation or etching. Next, the first
The laser diode side is protected by a resist film or the like, a mask of a stripe portion is formed for the second laser diode, and a current confinement structure of the second laser diode is formed by ion implantation or etching.

However, in the above-described method, the mask for the stripe portion is formed twice, and a resist film or the like for protecting the other laser diode is formed twice when forming the current confinement structure of one laser diode. Since it is formed, the manufacturing process becomes complicated and the manufacturing time becomes long. Further, in the state where a resist film or the like for protecting the other laser diode is formed, a mask of a stripe portion for forming a current confinement structure of one laser diode is formed because of a step of the resist film. It becomes difficult to align the mask in the stripe portion, and the yield is reduced.

The present invention has been made in view of the above situation, and accordingly, the present invention provides a semiconductor light emitting device having a plurality of semiconductor light emitting devices, which can form a current confinement structure under simple and optimized conditions. It is an object to provide a method for manufacturing a device.

[0031]

In order to achieve the above object, a method of manufacturing a semiconductor light emitting device according to the present invention comprises a method of manufacturing a semiconductor light emitting device having at least a first semiconductor light emitting element and a second semiconductor light emitting element on a substrate. Forming a first stacked body in which at least a first conductivity type first cladding layer, a first active layer, and a second conductivity type second cladding layer are stacked on a substrate in a first semiconductor light emitting element formation region. And forming a second laminate in which at least a first conductive type third clad layer, a second active layer, and a second conductive type fourth clad layer are laminated on the substrate in the second semiconductor light emitting element formation region. Forming, and forming a first protective film on an upper layer of the first laminate to protect a current injection region of the first laminate, and forming an upper layer of the second laminate on an upper layer of the second laminate. Second to protect the current injection area Forming a protective film, forming a third protective film for protecting the entire first laminate, and applying a current to the second laminate using the second protective film and the third protective film as a mask. A step of forming a constriction structure, a step of removing the third protective film, a step of forming a fourth protective film for protecting the entire second laminate, the first protective film and the fourth protective film Forming a current confinement structure in the first laminate using the mask as a mask, removing the fourth protection film, and removing the first protection film and the second protection film.

According to the method of manufacturing a semiconductor light emitting device of the present invention described above, the first semiconductor light emitting element formation region includes the steps of:
A first laminate is formed by laminating at least a first conductive type first clad layer, a first active layer, and a second conductive type second clad layer. Next, in the second semiconductor light emitting element formation region, at least a first conductive type third cladding layer on the substrate,
A second stacked body in which the second active layer and the second conductivity type fourth clad layer are stacked is formed. Next, on the upper layer of the first laminate,
A first protective film for protecting the current injection region of the first laminate is formed, and a second protective film for protecting the current injection region of the second laminate is formed above the second laminate. Next, a third protective film for protecting the entire first laminate is formed, and a current confinement structure is formed in the second laminate using the second protective film and the third protective film as a mask. After that, the third protective film is removed. Next, a fourth protection film for protecting the entire second stack is formed, and a current confinement structure is formed in the first stack using the first protection film and the fourth protection film as a mask. Thereafter, the fourth protective film, the first protective film, and the second protective film are respectively removed.

According to the method for manufacturing a semiconductor light emitting device of the present invention, at least the first semiconductor light emitting element and the second
When a semiconductor light emitting device having a semiconductor light emitting element is manufactured, the current confinement structure of the first stacked body serving as the first semiconductor light emitting element and the current constriction structure of the second stacked body serving as the second semiconductor light emitting element are separately formed. The current confinement structure can be formed under optimized conditions. Further, since the first protective film and the second protective film serving as masks for forming the current confinement structure of the first laminate and the current confinement structure of the second laminate are formed at the same time, the manufacturing process becomes complicated. In addition, they can be easily formed without making alignment difficult due to steps or the like.

In the method of manufacturing a semiconductor light emitting device according to the present invention, preferably, the first laminate and the second laminate are formed so that at least a part of the first laminate has a different composition or structure. The first semiconductor light emitting device and the second semiconductor light emitting device are formed with different device characteristics. Thereby, a semiconductor light emitting device having a plurality of semiconductor light emitting elements having different element characteristics, such as changing the light emitting intensity of the first semiconductor light emitting element and the second semiconductor light emitting element by changing the film thickness or composition of the active layer, is formed. can do.

In the method of manufacturing a semiconductor light emitting device according to the present invention, preferably, the first laminate and the second laminate are formed so that at least a part of the first laminate has a different composition. The light emitting device and the second semiconductor light emitting device are formed with different emission wavelengths. Thereby, a semiconductor light emitting device having a plurality of semiconductor light emitting elements having different emission wavelengths can be formed.

Preferably, in the method of manufacturing a semiconductor light emitting device according to the present invention, in the step of forming a current confinement structure in the second laminate, the step of removing the portion protected by the second protective film is performed. The two-layered structure is insulated to a depth in the middle of the fourth clad layer to form a current confinement structure. Alternatively, preferably, in the step of forming a current confinement structure in the second stacked body, the ridge is formed to a depth in the middle of the fourth clad layer of the second stacked body excluding a portion protected by the second protective film. It is processed into a shape to form a current confinement structure.

Preferably, in the method of manufacturing a semiconductor light emitting device according to the present invention, in the step of forming a current confinement structure in the first laminate, the step of removing the portion protected by the first protective film is performed. Insulation is performed to a depth in the middle of the second clad layer of one laminate to form a current confinement structure. Alternatively, preferably, in the step of forming a current confinement structure in the first laminate, the ridge is formed to a depth in the middle of the second clad layer of the first laminate excluding a portion protected by the first protective film. It is processed into a shape to form a current confinement structure.

In the method of manufacturing a semiconductor light emitting device of the present invention described above, preferably, a resist film having a hardened surface is formed as the first protective film and the second protective film. In the case where the first protective film and the second protective film are simultaneously formed, a third protective film for protecting the entire first laminate in order to form a current constriction structure of the second laminate which becomes the second semiconductor light emitting element. After the formation of the first protection film, it is necessary to remove the third protection film while leaving the first protection film in order to form a current confinement structure of the first stacked body to be the first semiconductor light emitting element. This can be realized by forming the protective film with a resist film whose surface has been subjected to a hardening treatment.

In the method of manufacturing a semiconductor light emitting device of the present invention, the first active layer and the second active layer are preferably formed with different composition ratios. Alternatively, preferably, the first active layer and the second active layer are formed of different composition elements. Alternatively, preferably, the first conductivity type first
The composition of the clad layer, the first active layer and the second conductive type second clad layer is made different from the composition of the first conductive type third clad layer, the second active layer and the second conductive type fourth clad layer. Form. This makes it possible to make the wavelengths of light emitted from each active layer different.

In the method of manufacturing a semiconductor light emitting device according to the present invention, preferably, the substrate is made of GaAs or GaAs.
A substrate containing a compound selected from the group consisting of P, GaP and InP is used. Preferably, in the step of forming the first stacked body and the step of forming the second stacked body, the step is formed of an element selected from the group consisting of Al, Ga, In, P, and As. A laminate including at least one layer is formed. In the method for manufacturing a semiconductor light emitting device of the present invention, since a plurality of semiconductor light emitting elements are formed separately, it is possible to select and configure an element suitable for each semiconductor light emitting element. The substrate on which the light emitting element is mounted can be appropriately selected from the above.

[0041]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the semiconductor light emitting device of the present invention and an optical pickup device using the same will be described below with reference to the drawings.

First Embodiment A semiconductor light emitting device according to this embodiment is a monolithic laser diode in which a laser diode LD1 for CD (light emission wavelength of 780 nm) and a laser diode LD2 for DVD (light emission wavelength of 650 nm) are mounted on one chip. And
It is a semiconductor light emitting device suitable for constituting a compatible optical pickup device capable of reproducing CDs and DVDs. FIG. 1 shows a cross-sectional view thereof.

The above monolithic laser diode 14
a will be described. As the first laser diode LD1, an n-type buffer layer 31 made of, for example, GaAs, for example, AlGa is formed on an n-type substrate 30 made of, for example, GaAs.
As-type n-type cladding layer 32, active layer (oscillation wavelength 7
80 nm multiple quantum well structure) 33, for example, AlGaAs
A first stacked body ST1 is formed by stacking a p-type cladding layer 34 made of s, for example, a p-type cap layer 35 made of GaAs. A stripe is formed as a region 41a insulated from the surface of the p-type cap layer 35 to a depth in the middle of the p-type cladding layer 34 to form a gain guide type current confinement structure.

On the other hand, as the second laser diode LD2, an n-type buffer layer 31 made of, for example, GaAs, an n-type buffer layer 36 made of, for example, InGaP, an n-type cladding layer 37 made of, for example, AlGaInP, A layer (multiple quantum well structure having an oscillation wavelength of 650 nm) 38, for example, a p-type cladding layer 39 made of AlGaInP, for example, a p-type cap layer 40 made of GaAs is stacked to form a second stacked body ST2. From the surface of the p-type cap layer 40 to a depth in the middle of the p-type cladding layer 39, a region other than a portion serving as a current injection region is removed so that the current injection region is processed into a ridge shape RD2 having a convex shape, and a gain is obtained. A stripe having a guide type current constriction structure is formed. By controlling the ridge depth and shape, it is also possible to easily produce an index guide, a self-pulsation type, and the like.

Further, the first laser diode LD
An insulating film 44 such as silicon oxide is formed so as to cover the first and second laser diodes LD2. Insulating film 4
4 is provided with a contact opening so as to expose the p-type cap layer (35, 40). Further, the p-type cap layer (35, 40) has a p-electrode 42, and the n-type substrate 30 has an n-type substrate.
The electrodes 43 are connected and formed. Also, in this case,
The insulating film 44 is not necessarily required as long as the structure is such that ohmic contact cannot be obtained in a portion other than the stripe.

In the monolithic laser diode 14a having the above-described structure, the distance between the laser light emitting portion of the first laser diode LD1 and the laser light emitting portion of the second laser diode LD2 is set to, for example, a range of about 200 μm or less (about 100 μm). You. For example, 7
A laser beam L1 having a wavelength in the 80 nm band and a laser beam L2 having a wavelength in the 650 nm band are emitted in substantially the same direction (substantially parallel) as being parallel to the substrate. The laser diode 14a having the above-mentioned structure is a monolithic laser diode having two types of laser diodes having different emission wavelengths, which are suitable for forming an optical pickup device of an optical disk system having different wavelengths such as CD and DVD. It is a laser diode.

The above monolithic laser diode 14
For example, as shown in FIG. 2, a is connected to and fixed to the electrode 13a formed on the semiconductor block 13 from the p-electrode 42 side by soldering or the like. in this case,
For example, the lead 13b is connected to the electrode 13a connecting the p-type electrode 42 of the first laser diode LD1, the lead 13c is connected to the electrode 13a connecting the p-type electrode 42 of the second laser diode LD2, and both laser diodes ( A voltage is applied to the n-type electrode 43 common to the LDs 1 and 2 via the leads 43a.

FIG. 3A is a perspective view showing an example of a configuration in which the monolithic laser diode 14a is mounted on a CAN package. For example, a semiconductor block 13 in which a PIN diode 12 as a photodetection element for monitoring is formed is fixed on a projection 21a provided on a disk-shaped base 21, and a first and a second laser diode are mounted on the semiconductor block 13. A monolithic laser diode 14a that mounts (LD1, LD2) on one chip is arranged. A terminal 22 is provided through the base 21 and is connected to the first and second laser diodes (LD1 and LD2) or the PIN diode 12 by a lead 23, and a drive power supply for each diode is provided. Is supplied.

FIG. 3B is a plan view of a principal part of the laser diode packaged in the CAN package as viewed from a direction perpendicular to the laser light emitting direction. A laser diode 14a having a first laser diode LD1 and a second laser diode LD2 on one chip is disposed above a semiconductor block 13 on which the PIN diode 12 is formed. P
In the IN diode 12, the laser light emitted to the rear side of the first and second laser diodes (LD1, LD2) is sensed, the intensity is measured, and the first diode is adjusted so that the intensity of the laser light becomes constant. And an APC (Au) for controlling the drive current of the second laser diode (LD1, LD2).
The configuration is such that tomatic power control is performed.

FIG. 4 shows the first laser diode LD.
Using a laser diode LD in which a monolithic laser diode having the first and second laser diodes LD2 mounted on one chip in a CAN package is used, a CD or DVD
FIG. 3 is a schematic diagram showing a configuration when an optical pickup device of an optical disc system having a different wavelength, such as an optical pickup device, is configured.

The optical pickup device 1a has an individual optical system, that is, a discrete laser system. For example, a first laser diode LD1 for emitting a laser beam having a wavelength of 780 nm and a laser beam having a wavelength of 650 nm are provided. A monolithic laser diode LD, 78, in which the emitting second laser diode LD2 is mounted on one chip.
A grating G, a beam splitter BS, a collimator C, a mirror M, an aperture limiting aperture R for CD, an objective lens OL, a multi-lens ML, and a photodiode PD for the 0 nm band and transparent to the 650 nm band are respectively provided. It is arranged at a predetermined position. In the photodiode PD, for example, a first photodiode that receives light in the 780 nm band and a second photodiode that receives light in the 650 nm band are formed adjacent to and parallel to each other.

In the optical pickup device 1a having the above configuration, the first laser light L1 from the first laser diode LD1 passes through the grating G, is partially reflected by the beam splitter BS, and is provided with a collimator C, a mirror M, and a CD opening. The light passes through or reflects through the limiting apertures R, respectively, and is focused on the optical disk D by the objective lens OL. The reflected light from the optical disc D is
L, the aperture limiting aperture R for CD, the mirror M, the collimator C, and the beam splitter BS, the light passes through the multi-lens ML, and is projected onto the photodiode PD (first photodiode). CD
For example, information recorded on the recording surface of the optical disc D is read.

In the optical pickup device 1a having the above configuration, the second laser light L2 from the second laser diode LD2 is also focused on the optical disk D along the same path as described above, and the reflected light is reflected by the photodiode PD (first light source). 2 photodiodes), and changes in the reflected light cause D
The information recorded on the recording surface of the optical disc D such as VD is read.

According to the above-described optical pickup device 1a, a laser diode for CD and a laser diode for DVD are mounted, and the reflected light is transmitted to the CD by a common optical system.
It is coupled to a photodiode for DVD and a photodiode for DVD to enable reproduction of CD and DVD.

Further, using a monolithic laser diode in which the first laser diode LD1 and the second laser diode LD2 according to the present embodiment are mounted on a single chip, light is recorded on an optical recording medium such as a CD and a DVD by light irradiation. It is also possible to configure a laser coupler suitable for an optical pickup device for performing reproduction. FIG.
(A) is an explanatory view showing a schematic configuration of the laser coupler 1b. The laser coupler 1b is mounted in a concave portion of the first package member 2, and is sealed by a transparent second package member 3 such as glass.

FIG. 5B is a perspective view of a main part of the laser coupler 1b. For example, a semiconductor block 13 on which a PIN diode 12 as a photodetection element for monitoring is formed is disposed on an integrated circuit substrate 11 which is a substrate obtained by cutting out a single crystal of silicon. First laser diode LD as light emitting element
A monolithic laser diode 14a that mounts the first and second laser diodes LD2 on one chip is arranged.

On the other hand, for example, the first
A photodiode (16, 17) and a second photodiode (18, 19) are formed, and the first and second photodiodes (18, 19) are formed.
A prism 20 is mounted on the photodiodes (16, 17, 18, 19) at a predetermined distance from the first and second laser diodes (LD1, LD2).

The laser light L1 emitted from the first laser diode LD1 is partially reflected on the spectral surface 20a of the prism 20, bends in the traveling direction, and is emitted from the emission window formed in the second package member 3 in the emission direction. The light is emitted and irradiates an object to be irradiated such as an optical disk (CD) via a reflection mirror or an objective lens (not shown). The reflected light from the object to be irradiated travels in the direction opposite to the direction of incidence on the object to be irradiated, and the prism 20
Incident on the spectral surface 20a. The front first photodiode 16 formed on the integrated circuit substrate 11 serving as the lower surface of the prism 20 while focusing on the upper surface of the prism 20
Then, the light enters the rear first photodiode 17.

On the other hand, the laser beam L2 emitted from the second laser diode LD2 is
Is partially reflected on the spectral surface 20a of the first lens, and the traveling direction is bent.
The light exits from the exit window formed in the package in the emission direction,
The light is irradiated onto an irradiation target such as an optical disk (DVD) via a not-shown reflection mirror or an objective lens. The reflected light from the irradiation target advances in a direction opposite to the incident direction on the irradiation target, and enters the spectral surface 20a of the prism 20 from the emission direction from the laser coupler 1b. The front second photodiode 18 and the rear second photodiode 19 formed on the integrated circuit substrate 11 serving as the lower surface of the prism 20 while focusing on the upper surface of the prism 20.
Incident on.

The PIN diode 12 formed on the semiconductor block 13 has, for example, a region divided into two, and includes first and second laser diodes (LD1, L2).
For each of D2), the laser beam emitted to the rear side is sensed, the intensity of the laser beam is measured, and the first and second laser diodes (LD1, LD2) are controlled so that the intensity of the laser beam becomes constant. APC control for controlling the drive current is performed.

The distance between the laser beam emitting portion of the first laser diode LD1 and the laser beam emitting portion of the second laser diode LD2 is, for example, in a range of about 200 μm or less (100
μm). Each laser beam emitting part (active layer)
Then, for example, a laser beam L1 having a wavelength of 780 nm band and a laser beam L2 having a wavelength of 650 nm band are emitted in substantially the same direction (substantially parallel).

FIG. 6 shows an example in which an optical pickup device is constructed using the above laser coupler. Laser light (L1, L2) emitted from the first and second laser diodes incorporated in the laser coupler 1b is collimated by a collimator C, a mirror M, a CD aperture limiting aperture R, and an objective lens OL.
Through the optical disk D such as a CD or a DVD. The reflected light from the optical disk D follows the same path as the incident light, returns to the laser coupler, and is received by the first and second photodiodes built in the laser coupler. As described above, by using the monolithic laser diode of the present embodiment, an optical pickup device of an optical disk system having a different wavelength, such as a CD or a DVD, can be easily assembled by reducing the number of parts and simplifying the configuration of the optical system. It is possible, and can be configured with a small size and low cost.

The first laser diode LD1 and the second
A method for forming the monolithic laser diode 14a in which the laser diode LD2 is mounted on one chip will be described. First, as shown in FIG. 7A, an n-type buffer layer 3 made of, for example, GaAs is formed on an n-type substrate 30 made of, for example, GaAs by an epitaxial growth method such as a metal organic chemical vapor deposition (MOVPE).
1, an n-type cladding layer 32 made of, for example, AlGaAs;
Active layer (multi quantum well structure with oscillation wavelength of 780 nm) 3
3, a p-type cladding layer 34 made of, for example, AlGaAs,
For example, a p-type cap layer 35 made of GaAs is sequentially stacked.

Next, as shown in FIG. 7B, a region left as the first laser diode LD1 is protected by a resist film (not shown), and sulfuric acid-based non-selective etching and hydrofluoric acid-based AlGaAs are selectively performed. The first laser diode LD is formed by wet etching (EC1) such as etching.
The above-mentioned laminate up to the n-type cladding layer 32 is removed in a region other than the one region.

Next, as shown in FIG. 8C, an n-type buffer layer 36 made of, for example, InGaP is formed on the n-type buffer layer 31 by an epitaxial growth method such as a metalorganic vapor phase epitaxial growth method (MOVPE). For example, an n-type cladding layer 37 made of AlGaInP, an active layer (a multiple quantum well structure having an oscillation wavelength of 650 nm) 38, a p-type cladding layer 39 made of AlGaInP, and a p-type cap layer 40 made of GaAs, for example, are sequentially stacked.

Next, as shown in FIG. 8D, a region left as the second laser diode LD2 is protected by a resist film (not shown), and sulfuric acid-based cap etching and phosphate-based hydrochloric acid-based quaternary selective etching are performed. The n-type buffer layer 36 in a region other than the region of the second laser diode LD2 by wet etching (EC2) such as hydrochloric acid-based separation etching.
The above-described stacked body is removed to separate the first stacked body ST1 for the first laser diode and the second stacked body ST2 for the second laser diode.

Next, as shown in FIG. 9E, a resist film is applied on the entire surface, and is exposed by aligning a mask pattern.
The first mask layer MSa1 and the first mask layer MSa1 that protect the current injection region of the first stacked body ST1 by a photolithography process of curing the exposed portion of the resist film and removing the unexposed portion of the resist film with an organic solvent such as acetone. Second mask layer MSa protecting current injection region of two-layered body ST2
2 are formed on the first stacked body ST1 and the second stacked body ST2, respectively.

Next, as shown in FIG. 9 (f), by chemicals such as CF ₄ or monochlorobenzene or by hard baking process, the first mask layer which is hardened surfaces MS1 and the second mask layer MS2 And

Next, as shown in FIG. 10 (g), the first laminated body S
The third protecting the entire T1 and opening the second stacked body ST2
The mask layer MS3 is formed.

Next, as shown in FIG. 10H, the etching process EC3 is performed using the second mask layer MS2 and the third mask layer MS3 as a mask while protecting the current injection region of the second stacked body ST2. And the second stacked body ST
2, a region other than a portion serving as a current injection region from the surface of the p-type cap layer 40 to a depth in the middle of the p-type cladding layer 39 is removed to form a ridge shape RD2 in which the current injection region protrudes in a convex shape. It is a stripe having a current constriction structure of a type.

Next, as shown in FIG. 11I, the third mask layer MS3 is removed by an organic solvent treatment or the like. At this time, the first mask layer MS1 and the second mask layer MS2
Is not removed. Since the first mask layer and the second mask layer are formed of a resist film having a hardened surface, the first mask layer to be a first laser diode in the subsequent steps.
In order to form the current confinement structure of the stacked body ST1, it is possible to easily remove the third mask layer MS3 while leaving the first mask layer MS1. Next, a fourth mask layer MS4 that protects the entire second stacked body ST2 and opens the first stacked body ST1 is formed by a photolithography process similar to the formation process of the third mask layer.

Next, as shown in FIG. 11 (j), using the first mask layer MS1 and the fourth mask layer MS4 as masks, an impurity D1 is implanted into a region other than a current injection region of the first stacked body ST1. Introduced by ion implantation or the like, an insulated region 41a is formed from the surface of the p-type cap layer 35 to a depth in the middle of the p-type cladding layer 34 to form a stripe having a gain guide type current confinement structure.

Next, as shown in FIG. 12 (k), the fourth mask layer MS4 is removed by an organic solvent treatment or the like, and the surface is hardened by an ashing treatment or the like as shown in FIG. 12 (1). The first mask layer MS1 and the second mask layer MS2 which are the processed resist films are removed.

Next, as shown in FIG. 13 (m), for example, CVD (Chemical Vapor Deposition)
A silicon oxide is deposited on the entire surface by a (tion) method, an insulating film 44 is formed, and a contact opening is formed so as to expose the p-type cap layers (35, 40).

Next, as shown in FIG. 13 (n), Ti / Pt is connected to the p-type cap layer (35, 40).
/ Au or other p-type electrode 42, while n-type substrate 3
An n-type electrode 43 such as AuGe / Ni / Au is formed so as to be connected to zero.

Thereafter, through a pelletizing step, a monolithic laser diode 14a in which the desired first laser diode LD1 and second laser diode LD2 are mounted on one chip as shown in FIG. 1 can be obtained.

In the monolithic laser diode of the present embodiment, for example, since two laser diodes are formed separately, the respective laser diodes are converted from an element group consisting of Al, Ga, In, P, As, and the like. A suitable element can be selected and constituted. The n-type substrate 30 on which these two semiconductor light emitting elements are mounted can be appropriately selected from substrates containing a compound selected from the group consisting of GaAs, GaAsP, GaP and InP.

According to the method for manufacturing a monolithic laser diode of the present embodiment, when manufacturing a semiconductor light emitting device having a plurality of semiconductor light emitting elements (laser diodes) having different emission wavelengths, the first laser diode is used. The current confinement structure of the first stacked body and the current confinement structure of the second stacked body serving as the second laser diode are performed in different steps, and the current confinement structure can be formed under optimized conditions. A first mask serving as a mask for forming the current confinement structure of the first laminate and the current confinement structure of the second laminate.
Since the protective film and the second protective film are formed at the same time, they can be formed easily without complicating the manufacturing process and without making alignment difficult due to steps or the like.

Second Embodiment A semiconductor light emitting device according to the second embodiment is the same as the monolithic laser diode 14a according to the first embodiment.
Laser diode LD1 for CD (emission wavelength 780n
m) and a laser diode LD2 for DVD (emission wavelength 6
50 nm) on a single chip, and is a semiconductor light emitting device suitable for constituting a compatible optical pickup device capable of reproducing CDs and DVDs. FIG. 14 shows a cross-sectional view thereof.

The above monolithic laser diode 14
b will be described. The same as the monolithic laser diode 14a according to the first embodiment, except that both the first laser diode LD1 and the second laser diode LD2 are formed from the surface of the p-type cap layer (35, 40) to the p-type cladding layer (34, 40). 39) is different from the first embodiment in that a stripe (41a, 41b) insulated to an intermediate depth is formed as a gain guide type current confinement structure.

In the monolithic laser diode 14b having the above structure, for example, 78
A laser beam L1 having a wavelength of 0 nm band and a laser beam L2 having a wavelength of 650 nm band are emitted in substantially the same direction (substantially parallel) as being parallel to the substrate. The laser diode 14b having the above-described structure is a monolithic laser diode that mounts two types of laser diodes having different emission wavelengths on a single chip, which are suitable for forming an optical pickup device of an optical disk system having a different wavelength such as a CD or DVD. It is a laser diode.

The above monolithic laser diode 14
The method for forming b will be described. The method is substantially the same as the method of forming the monolithic laser diode 14a according to the first embodiment, except that the p-type cap layer is removed from the surface of the p-type cap layer in the step of forming the current confinement structure of the second stacked body to be the second laser diode. Instead of the step of forming a ridge shape by etching to an intermediate depth, a p-type cap is introduced by introducing impurities by ion implantation or the like as in the step of forming the current confinement structure of the first stacked body to be the first laser diode. It can be formed by insulating a region excluding a portion serving as a current injection region from the layer surface to a depth in the middle of the p-type cladding layer.

According to the method for manufacturing a monolithic laser diode of the present embodiment, as in the first embodiment,
When manufacturing a semiconductor light-emitting device having a plurality of semiconductor light-emitting elements (laser diodes) having different emission wavelengths, the current is controlled under conditions in which the current confinement structure of the first laser diode and the current confinement structure of the second laser diode are optimized. A constriction structure can be formed, and the formation can be easily performed without complicating the manufacturing process.

Third Embodiment A semiconductor light emitting device according to the present embodiment is the same as the monolithic laser diode 14a according to the first embodiment.
Laser diode LD1 for CD (emission wavelength 780n
m) and a laser diode LD2 for DVD (emission wavelength 6
50 nm) on a single chip, and is a semiconductor light emitting device suitable for constituting a compatible optical pickup device capable of reproducing CDs and DVDs. FIG. 15 shows a cross-sectional view thereof.

The above monolithic laser diode 14
c will be described. The same as the monolithic laser diode 14a according to the first embodiment, except that both the first laser diode LD1 and the second laser diode LD2 are formed from the surface of the p-type cap layer (35, 40) to the p-type cladding layer (34, 40). 39) Up to the middle of the depth, the region other than the portion serving as the current injection region is removed, and the current injection region is processed so as to have a ridge shape (RD1, RD2) protruding, and a gain guide type current confinement structure. Is formed.

In the monolithic laser diode 14c having the above structure, for example, 78
A laser beam L1 having a wavelength of 0 nm band and a laser beam L2 having a wavelength of 650 nm band are emitted in substantially the same direction (substantially parallel) as being parallel to the substrate. The laser diode 14c having the above-described structure is a monolithic chip on which two types of laser diodes having different emission wavelengths are mounted on one chip, which is suitable for forming an optical pickup device of an optical disk system having a different wavelength such as a CD or DVD. It is a laser diode.

The above monolithic laser diode 14
The method for forming c will be described. The method of forming the monolithic laser diode 14a in the first embodiment is substantially the same as that of the first embodiment, except that impurities are introduced by ion implantation or the like in the step of forming the current confinement structure of the first stacked body to be the first laser diode. The same as the step of forming the current confinement structure of the second stacked body to be the second laser diode, instead of the step of insulating the region other than the part to be the current injection region from the layer surface to the middle depth of the p-type cladding layer To
It can be formed by forming a ridge shape by etching from the surface of the p-type cap layer to a depth in the middle of the p-type clad layer.

According to the method for manufacturing a monolithic laser diode of the present embodiment, as in the first embodiment,
When manufacturing a semiconductor light-emitting device having a plurality of semiconductor light-emitting elements (laser diodes) having different emission wavelengths, the current is controlled under conditions in which the current confinement structure of the first laser diode and the current confinement structure of the second laser diode are optimized. A constriction structure can be formed, and the formation can be easily performed without complicating the manufacturing process.

Although the present invention has been described with reference to the three embodiments, the present invention is not limited to these embodiments. For example, the light emitting element used in the present invention is not limited to a laser diode, but may be a light emitting diode (LED). The plurality of light-emitting elements mounted in the present invention may be light-emitting elements having different emission characteristics, such as light-emitting elements having different emission wavelengths or different emission characteristics even if the emission wavelengths are the same. As long as the element has the element, the present invention can be applied to a light-emitting element having the same element characteristics. In addition, the emission wavelengths of the first and second laser diodes are not limited to the 780 nm band and the 650 nm band, but may be wavelengths employed in other optical disk systems. That is, an optical disk system of another combination of CD and DVD can be adopted. In addition, the present invention can be applied to other lasers having various characteristics, such as an index guide type and a pulsation laser, in addition to the gain guide type current confinement structure. Further, the first laser diode may be of a ridge type and the second laser diode may be of an ion implantation type. In addition, various changes can be made without departing from the spirit of the present invention.

The semiconductor light-emitting device that can be manufactured according to the present invention only has to have a plurality of semiconductor light-emitting elements, and a semiconductor light-emitting device having three or more semiconductor light-emitting elements can also be manufactured. In this case, after forming a stacked body to be each semiconductor light emitting element, a mask layer for forming a current confinement structure is simultaneously formed on each of the stacked bodies, and one of the plurality of stacked bodies is formed. It can be manufactured by repeating the formation of the resist film that opens the laminate portion and the formation of the current constriction structure of the laminate at the opening portion for all the laminates, and can enjoy the effects of the present invention. .

[0091]

According to the method for manufacturing a semiconductor light emitting device of the present invention, the current confinement structure of the first stacked body serving as the first semiconductor light emitting element and the current constriction structure of the second stacked body serving as the second semiconductor light emitting element are obtained. Are performed in different steps, and the current confinement structure can be formed under the optimized conditions. Also, the first
Since the first protection film and the second protection film serving as masks for forming the current confinement structure of the stacked body and the current confinement structure of the second stacked body are formed at the same time, the manufacturing process is not complicated,
The alignment can be easily performed without making the alignment difficult due to a step or the like.

[Brief description of the drawings]

FIG. 1 is a sectional view of a laser diode according to a first embodiment.

FIG. 2 is a sectional view showing an example of use of the laser diode according to the first embodiment.

FIG. 3A is a perspective view illustrating a configuration in which the laser diode according to the first embodiment is mounted on a CAN package, and FIG. 3B is a plan view of a main part thereof.

FIG. 4 is a schematic diagram showing a configuration of an optical pickup device using the laser diode packaged in the CAN package of FIG. 3;

FIG. 5A is a perspective view showing a configuration in which the laser diode according to the first embodiment is mounted on a laser coupler, and FIG. 5B is a perspective view of a main part thereof.

FIG. 6 is a schematic diagram showing a configuration of an optical pickup device using the laser diode converted into a laser coupler of FIG. 5;

FIGS. 7A and 7B are cross-sectional views illustrating manufacturing steps of a manufacturing method of the laser diode according to the first embodiment, and FIG.
Until the step of forming the first stacked body to be a laser diode,
(B) shows the process up to the step of etching and removing the first stacked body while leaving the first laser diode region.

FIG. 8 shows a step subsequent to that of FIG. 7, and (c) shows the second step.
Until the step of forming the second stacked body to be a laser diode,
(D) shows the process up to the step of etching and removing the second stacked body while leaving the second laser diode region.

FIG. 9 shows a step subsequent to that of FIG. 8; (e) shows up to a step of forming a first mask layer and a second mask layer serving as a mask for forming a current confinement structure; (f) shows a first mask layer And the steps up to the curing treatment step on the surface of the second mask layer.

10 shows a step subsequent to that of FIG. 9; (g) shows a step of forming a third mask layer for protecting the entire first layered body; and (h) shows a current confinement structure in the second layered body. Up to a stripe forming step.

FIG. 11 shows a step that follows the step shown in FIG. 10; (i)
FIG. 4A shows up to a step of forming a fourth mask layer for protecting the entire second laminate, and FIG. 5J shows up to a step of forming a stripe having a current confinement structure in the first laminate.

FIG. 12 shows a step that follows the step of FIG. 11, and (k)
Shows the process up to the step of removing the fourth mask layer, and (l) shows the process up to the step of removing the first mask layer and the second mask layer.

FIG. 13 shows a step that follows the step shown in FIG. 12, and (m)
Shows the steps up to the step of forming the insulating film, and (n) shows the steps up to the step of forming the n-electrode and the p-electrode.

FIG. 14 is a sectional view of a laser diode according to a second embodiment.

FIG. 15 is a sectional view of a laser diode according to a third embodiment.

FIG. 16 is a sectional view of a laser diode according to a first conventional example.

FIG. 17 is a cross-sectional view showing a manufacturing process of a method for manufacturing a laser diode according to a first conventional example. FIG.
(B) shows the process up to the step of etching and removing the stacked body while leaving the first laser diode region.

FIG. 18 shows a step that follows the step of FIG. 17;
Up to the step of forming a laminate to be the second laser diode,
(D) shows the process up to the step of etching and removing the stacked body while leaving the second laser diode region.

FIG. 19 shows a step that follows the step shown in FIG. 18;
Up to the step of forming the stripe that forms the current confinement structure
(F) shows the steps up to the step of forming the n-electrode and the p-electrode.

FIG. 20 is a sectional view of a laser diode according to a second conventional example.

FIGS. 21A and 21B are cross-sectional views illustrating manufacturing steps of a method for manufacturing a laser diode according to a second conventional example, and FIG. 21A is a first stacked body serving as a first laser diode and a second stacked body serving as a second laser diode. (B) shows up to the step of forming a ridge shape to form a current constriction structure.

FIG. 22 shows a step that follows the step shown in FIG. 21;
Shows the steps up to the step of forming the insulating film, and (d) shows the steps up to the step of forming the n-electrode and the p-electrode.

[Explanation of symbols]

1a: Optical pickup device, 1b: Laser coupler,
2 ... first package member, 3 ... second package member, 1
DESCRIPTION OF SYMBOLS 1 ... Integrated circuit board, 12 ... PIN diode, 13 ... Semiconductor block, 14a, 14b, 14c, 114a, 1
14b: monolithic laser diode, LD1: first
Laser diode, LD2 ... second laser diode, 1
6: front first photodiode, 17: rear first photodiode, 18: front second photodiode, 19 ...
Rear second photodiode, 20 ... prism, 20a ...
Spectral surface, 21: base, 21a: protrusion, 22: terminal, 2
3, 13b, 13c, 43a ... lead, 30 ... n-type substrate, 31, 36 ... n-type buffer layer, 32, 37 ... n-type cladding layer, 33, 38 ... active layer, 34, 39 ... p-type cladding layer, 35, 40 ... p-type cap layer, 41a, 41b
... an insulating region, 42 ... a p-electrode, 43 ... an n-electrode, 44 ... an insulating film, MS1 ... a first mask layer, MS2 ... a second mask layer,
MS3: third mask layer, MS4: fourth mask layer, RD
1, RD2: ridge shape, ST1: first laminate, ST2
... Second laminated body, BS: Beam splitter, C: Collimator, R: Aperture limiting aperture for CD, ML: Multi-lens, PD: Photodiode, EC: Etching solution, G
… Grating, M… Mirror, OL… Objective lens, D
... An optical disk, L1. A first laser beam, L2.

Claims (13)

[Claims] 1. A method of manufacturing a semiconductor light emitting device having at least a first semiconductor light emitting element and a second semiconductor light emitting element on a substrate, wherein the first semiconductor light emitting element forming region has at least a first conductive type light emitting element on the substrate. Forming a first laminate in which one clad layer, a first active layer, and a second conductive type second clad layer are laminated; and, in a second semiconductor light emitting element formation region, on the substrate.
Forming a second laminate in which at least a third cladding layer of a first conductivity type, a second active layer, and a fourth cladding layer of a second conductivity type are laminated; and forming the first laminate on an upper layer of the first laminate. Forming a first protective film for protecting a current injection region of the body, and forming a second protective film on an upper layer of the second laminate to protect a current injection region of the second laminate; Forming a third protective film for protecting the whole of the one stacked body; and using the second protective film and the third protective film as masks,
Forming a current confinement structure in the second stacked body; removing the third protection film; forming a fourth protection film that protects the entire second stacked body; Using the film and the fourth protective film as a mask,
A method for manufacturing a semiconductor light emitting device, comprising: forming a current confinement structure in the first stacked body; removing the fourth protection film; and removing the first protection film and the second protection film. . 2. The first laminate and the second laminate are formed so that at least part of the first laminate and the second laminate have different compositions or structures, and the device characteristics of the first semiconductor light emitting device and the second semiconductor light emitting device are changed. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed differently. 3. The first laminated body and the second laminated body are formed so that at least a part of them has a different composition, and the first semiconductor light emitting device and the second semiconductor light emitting device have different emission wavelengths. 3. The method for manufacturing a semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is formed. 4. A step of forming a current confinement structure in the second laminate, wherein the insulating layer is insulated to a depth in the middle of the fourth clad layer of the second laminate except for a portion protected by the second protective film. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed into a current confinement structure. 5. The step of forming a current confinement structure in the second stacked body, wherein the ridge is formed to a depth in the middle of the fourth clad layer of the second stacked body excluding a portion protected by the second protective film. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is processed to have a current constriction structure. 6. A step of forming a current confinement structure in the first laminate, wherein the insulating layer is insulated to a depth halfway of the second clad layer of the first laminate except for a portion protected by the first protective film. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed into a current confinement structure. 7. A step of forming a current confinement structure in the first laminate, wherein the ridge is formed to a depth halfway in the second clad layer of the first laminate except for a portion protected by the first protective film. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is processed to have a current constriction structure. 8. The first protective film and the second protective film,
2. The method according to claim 1, wherein a resist film having a hardened surface is formed. 9. The method according to claim 1, wherein the first active layer and the second active layer are formed with different composition ratios. 10. The method according to claim 1, wherein the first active layer and the second active layer are formed of different composition elements. 11. The composition of said first conductive type first cladding layer, first active layer and second conductive type second cladding layer, and said first conductive type third cladding layer, second active layer and second conductive type. 2. The method according to claim 1, wherein the composition of the mold fourth cladding layer is different from that of the fourth cladding layer.
The manufacturing method of the semiconductor light emitting device described in the above. 12. The method according to claim 12, wherein the substrate is GaAs, GaAs.
2. The method according to claim 1, wherein a substrate containing a compound selected from the group consisting of P, GaP and InP is used. 13. The method according to claim 13, wherein in the step of forming the first laminate and the step of forming the second laminate, Al, Ga,
The method for manufacturing a semiconductor light emitting device according to claim 1, wherein a stacked body including at least one layer formed of an element selected from the element group consisting of In, P, and As is formed.