JP2001237233A - Plasma processing method and apparatus - Google Patents

Abstract

(57) [Problem] To provide a plasma processing method and apparatus capable of obtaining good uniformity and obtaining a high ion saturation current density even when the distance between an antenna and a substrate is reduced. SOLUTION: While maintaining the inside of a vacuum vessel 1 at a predetermined pressure, high-frequency power is supplied to an antenna 5. Also, “a first plasma trap 13 formed of a groove-shaped space between the first conductor ring 12 and the antenna 5, which is provided in a peripheral portion of the antenna 5 and closely attached to the dielectric plate 6”; “It is provided around the first conductor ring 12 and the dielectric plate 6
And a second plasma trap 15 comprising a groove-shaped space between the second conductor ring 14 and the first conductor ring 12, which are provided in close contact with each other and have an inner diameter smaller than the outer shape of the dielectric plate 6.
Is provided. With this configuration, even when the distance between the antenna 5 and the substrate 9 was reduced, uniformity was good and a high ion saturation current density was obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus for dry etching, sputtering, plasma CVD, etc., used for manufacturing electronic devices such as semiconductors and micromachines, and more particularly, to a VHF band or UHF band.
The present invention relates to a plasma processing method and apparatus using plasma excited using high-frequency power in a band.

[0002]

2. Description of the Related Art Japanese Patent Application Laid-Open No. 8-83696 describes the importance of using high-density plasma in order to cope with miniaturization of electronic devices such as semiconductors. Low electron temperature plasma, which has high electron temperature and low electron temperature, has attracted attention.

[0003] Strongly negative gases such as Cl ₂ and SF ₆
In other words, when a gas that easily generates negative ions is turned into plasma, when the electron temperature is about 3 eV or less, a larger amount of negative ions is generated than when the electron temperature is high. Utilizing this phenomenon, it is possible to prevent an abnormal etching shape called a notch, which is caused by the accumulation of positive charges at the bottom of the fine pattern due to excessive incidence of positive ions. It can be carried out.

Further, CxFy and CxHy generally used when etching an insulating film such as a silicon oxide film are used.
When a gas containing carbon and fluorine such as Fz (x, y, and z are natural numbers) is plasmatized, when the electron temperature becomes about 3 eV or less, the dissociation of the gas is suppressed as compared to when the electron temperature is high. Generation of atoms, F radicals, and the like is suppressed. Since F atoms, F radicals, and the like have a high silicon etching rate, the lower the electron temperature, the higher the etching selectivity with respect to silicon.

When the electron temperature becomes 3 eV or less, the ion temperature and the plasma potential also decrease.
D can reduce ion damage to the substrate.

[0006] As a technique capable of generating plasma having a low electron temperature, attention is currently paid to a VHF band or a UHF band.
It is a plasma source that uses high-frequency power in the band.

FIG. 5 is a sectional view of a plate antenna type plasma processing apparatus which has already been proposed. In FIG. 5, while introducing a predetermined gas from a gas supply device 2 into a vacuum vessel 1, the gas is evacuated by a pump 3 as an exhaust device. When a high-frequency power of 100 MHz is supplied to the antenna 5 through a through hole 7 provided in a dielectric plate 6 which is sandwiched between the antenna 5 and the vacuum vessel 1 and has substantially the same outer dimensions as the antenna 5, the vacuum vessel A plasma is generated in the substrate 1, and plasma processing such as etching, deposition, and surface modification can be performed on the substrate 9 placed on the substrate electrode 8. At this time, ion energy reaching the substrate 9 can be controlled by supplying high-frequency power to the substrate electrode 8 from the substrate electrode high-frequency power supply 10. The surface of the antenna 5 is covered with an insulating cover 11. A groove-shaped space between the dielectric plate 6 and a dielectric ring 18 provided around the dielectric plate 6, and the antenna 5 and the conductor ring 1 provided around the antenna 5
9 is provided with a plasma trap 20 consisting of a groove-shaped space between them. With such a configuration, the electromagnetic wave radiated from the antenna 5 is strengthened by the plasma trap 20, and the hollow cathode discharge tends to occur in the low electron temperature plasma. High-density plasma (hollow cathode discharge) is easily generated. Therefore, in the vacuum vessel 1, the plasma density is highest in the plasma trap 20, and the plasma is transported to the vicinity of the substrate 9 by diffusion, so that more uniform plasma can be obtained.

[0008]

However, in the conventional system shown in FIG. 5, it is necessary to increase the distance between the antenna 5 and the substrate electrode 8 in order to obtain uniformity of the plasma. In order to obtain the density, there is a problem that it is necessary to apply a very high frequency power. For example, in a plasma of chlorine gas,
In order to obtain uniformity of ± 10% or less in a range of a diameter of 300 mm, the distance between the antenna 5 and the substrate electrode 8 must be 130 mm.
When chlorine gas is supplied into the vacuum vessel 1 and a VHF power of 1000 W is applied to the antenna 5, the ion saturation current density near the substrate 9 at 1 Pa is 2.
It was ² mA / cm ² .

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and provides a plasma processing method and apparatus capable of achieving high uniformity and a high ion saturation current density even when the distance between an antenna and a substrate is reduced. It is an object.

[0010]

According to a first aspect of the present invention, there is provided a plasma processing method, wherein the inside of a vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
An antenna provided in the vacuum vessel facing the substrate placed on the substrate electrode in the vacuum vessel, provided on a dielectric plate sandwiched between the antenna and the vacuum vessel and having a larger outer dimension than the antenna A plasma processing method for generating plasma in a vacuum vessel and processing a substrate by applying high-frequency power having a frequency of 50 MHz to 3 GHz through a through hole provided, the method comprising: A first plasma trap comprising a groove-shaped space between the first conductor ring provided closely to the dielectric plate and the antenna, and "a first plasma trap provided in the periphery of the first conductor ring, and
The second plasma ring which is provided in close contact with the dielectric plate and has an inner diameter smaller than the outer shape of the dielectric plate, and a second plasma trap comprising a groove-shaped space between the first conductor ring " The substrate is processed in a state where the plasma distribution is controlled.

In the plasma processing method according to the second aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the vacuum vessel is mounted on the substrate electrode in the vacuum vessel while controlling the pressure to a predetermined pressure. The antenna provided in the vacuum vessel opposite to the placed substrate is sandwiched between the antenna and the vacuum vessel, and has a frequency through a through-hole provided in a dielectric plate having substantially the same external dimensions as the antenna. A plasma processing method for generating plasma in a vacuum vessel by applying high-frequency power of 50 MHz to 3 GHz to process a substrate,
A dielectric ring is provided in close contact with the periphery of the dielectric plate,
"A first plasma trap including a groove-shaped space between the antenna and a first conductor ring provided around the antenna and closely attached to the dielectric ring";
A groove formed between the second conductor ring and the first conductor ring, which is provided on the periphery of the conductor ring, is provided in close contact with the dielectric ring, and has an inner diameter smaller than the outer shape of the dielectric ring. The substrate is processed in a state where the plasma distribution on the substrate is controlled by the "second plasma trap comprising a space".

In the plasma processing method according to the first or second aspect of the present invention, it is preferable to provide a short pin for short-circuiting the antenna and the vacuum vessel in order to provide an isotropic electromagnetic field distribution to the antenna. .

Preferably, the surface of the antenna is covered with an insulating cover.

The plasma processing method of the first or second invention of the present application is an effective plasma processing method particularly when no DC magnetic field exists in the vacuum vessel.

A plasma processing apparatus according to a third aspect of the present invention includes a vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate in the vacuum container. A substrate electrode for mounting the antenna, an antenna provided opposite to the substrate electrode, a dielectric plate sandwiched between the antenna and the vacuum vessel, and having a larger outer dimension than the antenna, and provided on the dielectric plate. And a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna through the provided through-hole, wherein the high-frequency power supply is provided at the periphery of the antenna and is in close contact with the dielectric plate. A first plasma trap consisting of a groove-shaped space between a first conductor ring provided as an antenna and an antenna,
"A groove formed between the first conductor ring and the second conductor ring, which is provided on the periphery of the first conductor ring, is provided in close contact with the dielectric plate, and has an inner diameter smaller than the outer shape of the dielectric plate. Is provided. "

According to a fourth aspect of the present invention, there is provided a plasma processing apparatus comprising: a vacuum container; a gas supply device for supplying gas into the vacuum container; an exhaust device for exhausting the inside of the vacuum container; A substrate electrode for mounting the antenna, an antenna provided facing the substrate electrode, a dielectric plate sandwiched between the antenna and the vacuum vessel, and having substantially the same outer dimensions as the antenna, and provided on the dielectric plate. And a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna through the provided through hole, wherein a dielectric ring is provided in close contact with a peripheral portion of the dielectric plate. "A first plasma trap including a groove-shaped space between the antenna and a first conductor ring provided around the antenna and closely attached to the dielectric ring"
"The second conductor ring, which is provided at the periphery of the first conductor ring and is provided in close contact with the dielectric ring, and has an inner diameter smaller than the outer shape of the dielectric ring, Second Plasma Trap Consisting of Groove-shaped Space Between "
Is provided.

In the plasma processing apparatus according to the third or fourth aspect of the present invention, it is preferable to provide a short pin for short-circuiting the antenna and the vacuum vessel.

Preferably, the surface of the antenna is covered with an insulating cover.

The plasma processing apparatus according to the third or fourth aspect of the present invention is an effective plasma processing apparatus particularly when no coil or permanent magnet for applying a DC magnetic field is provided in a vacuum vessel.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIG.

FIG. 1 is a sectional view of a plasma processing apparatus used in the first embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the pump 3 as an exhaust device. To antenna 5
When supplied to the antenna 5 through a through hole 7 provided in a dielectric plate 6 having a larger outer dimension than the antenna 5, the plasma is generated in the vacuum container 1, The substrate 9 placed on the substrate electrode 8 can be subjected to plasma processing such as etching, deposition, and surface modification. At this time, ion energy reaching the substrate 9 can be controlled by supplying high-frequency power to the substrate electrode 8 from the substrate electrode high-frequency power supply 10. The surface of the antenna 5 is covered with an insulating cover 11.

Also, “the antenna 5 is provided around the antenna 5,
The first conductor ring 1 provided in close contact with the dielectric plate 6
A first plasma trap 13 comprising a groove-shaped space between the antenna 2 and the antenna 5, and “a first plasma trap 13 provided around the first conductor ring 12 and closely attached to the dielectric plate 6;
Second conductor ring 14 having an inner diameter smaller than the outer shape of dielectric plate 6
And a second plasma trap 15 ”comprising a groove-shaped space between the first conductor ring 12 and the first conductor ring 12.

In the plasma processing apparatus used in the first embodiment of the present invention shown in FIG. 1, the antenna 5 and the substrate electrode necessary for obtaining a uniformity of ± 10% or less within a range of 300 mm in diameter with chlorine gas plasma. The distance to 8 is 80
mm. Further, in this configuration, when chlorine gas is supplied into the vacuum vessel 1 and a VHF power of 1000 W is applied to the antenna 5, the ion saturation current density in the vicinity of the substrate 9 becomes 3.5 mA / cm ² at 1 Pa. Significant improvement was seen compared to.

As described above, even when the distance between the antenna 5 and the substrate 9 is reduced, the ion saturation current density distribution with good uniformity is obtained because the two plasma traps 13 and 15 have a donut shape. This is considered to be because two high-density plasma regions were formed, and the plasma could be effectively transported to the central portion and the peripheral portion of the substrate 9 even with a short diffusion distance. Here, the dielectric plate 6 has a role as a transmission path for transmitting an electromagnetic wave from the antenna 5 to the second plasma trap 15. In addition, a higher ion saturation current density than that of the conventional example was obtained because the distance between the antenna 5 and the substrate 9 was reduced, so that the plasma volume was reduced, and a relatively high frequency power per unit volume was increased. Probably because it was supplied.

Next, a second embodiment of the present invention will be described with reference to FIG.

FIG. 2 is a sectional view of a plasma processing apparatus used in the second embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the pump 3 as an exhaust device. To antenna 5
When supplied to the antenna 5 through the through-hole 7 provided in the dielectric plate 6 which is sandwiched between the antenna 5 and the outer dimensions substantially equal to the antenna 5, plasma is generated in the vacuum container 1, The substrate 9 placed on the substrate electrode 8 can be subjected to plasma processing such as etching, deposition, and surface modification. At this time, ion energy reaching the substrate 9 can be controlled by supplying high-frequency power to the substrate electrode 8 from the substrate electrode high-frequency power supply 10. The surface of the antenna 5 is covered with an insulating cover 11.

Further, a dielectric ring 16 is provided in close contact with the peripheral portion of the dielectric plate 6, and “a first ring provided in the peripheral portion of the antenna 5 and provided in close contact with the dielectric ring 16.
A "first plasma trap 13 comprising a groove-shaped space between the conductor ring 12 and the antenna 5";
2 and a second conductor ring 14 provided in close contact with the dielectric ring 16 and having an inner diameter smaller than the outer shape of the dielectric ring 16.
Plasma trap 1 comprising a groove-shaped space between
5 "is provided.

In the plasma processing apparatus used in the second embodiment of the present invention shown in FIG. 2, the antenna 5 and the substrate electrode necessary for obtaining uniformity of ± 10% or less in a range of a diameter of 300 mm with plasma of chlorine gas. The distance to 8 is 80
mm. In this configuration, when chlorine gas is supplied into the vacuum vessel 1 and a VHF power of 1000 W is applied to the antenna 5, the ion saturation current density in the vicinity of the substrate 9 at 1 Pa is 3.3 mA / cm ² . Significant improvement was seen compared to.

As described above, even when the distance between the antenna 5 and the substrate 9 is reduced, an ion saturation current density distribution with good uniformity is obtained because the two plasma traps 13 and 15 have a donut shape. This is considered to be because two high-density plasma regions were formed, and the plasma could be effectively transported to the central portion and the peripheral portion of the substrate 9 even with a short diffusion distance. Here, the dielectric ring 16 has a role as a transmission path for transmitting an electromagnetic wave from the antenna 5 to the second plasma trap 15. In addition, a higher ion saturation current density than that of the conventional example was obtained because the distance between the antenna 5 and the substrate 9 was reduced, so that the plasma volume was reduced, and a relatively high frequency power per unit volume was increased. Probably because it was supplied.

In the first embodiment of the present invention described with reference to FIG. 1, the dielectric plate 6 having a larger outer dimension than the antenna 5 is used. On the other hand, the second embodiment of the present invention described with reference to FIG. Then, the dielectric plate 6 whose outer dimensions are almost the same as the antenna 5
And the dielectric ring 16 is provided in close contact with the peripheral portion of the dielectric plate 6. By adopting such a configuration, the materials of the dielectric plate 6 and the dielectric ring 16 can be independently set. This is advantageous in that it can be selected and that the degree of freedom in design increases.

In the embodiment of the present invention described above,
In the applicable range of the present invention, only a part of various variations regarding the shape of the vacuum vessel, the shape and arrangement of the antenna, the shape and arrangement of the dielectric, and the like are illustrated. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.

In the above-described embodiment of the present invention, the case where the high-frequency power of 100 MHz is supplied to the antenna has been described. However, the frequency is not limited to this, and the plasma processing using the frequency of 50 MHz to 3 GHz is performed. The present invention is effective in a method and an apparatus.

Further, as in the third embodiment of the present invention shown in FIG. 3, when the antenna 5 is grounded by the short pin 17, a more isotropic electromagnetic field distribution can be obtained. As shown in the plan view of the antenna 5 in FIG. 4, the short pins 17 are provided at three places, and the short pins 17 are equally arranged with respect to the center of the antenna 5.

Also, in the above-described embodiment of the present invention, the case where the surface of the antenna is covered with the insulating cover has been described, but the insulating cover may not be provided. However, if there is no insulating cover, there is a possibility that problems such as contamination of the substrate due to the material constituting the antenna may occur.
When performing a process sensitive to contamination, it is better to provide an insulating cover. Also, when there is no insulating cover, the ratio of capacitive coupling between the antenna and the plasma increases, and the plasma density at the center of the substrate tends to increase. In some cases, a more uniform plasma distribution can be obtained.

Also, in the above-described embodiment of the present invention, the case where no DC magnetic field exists in the vacuum vessel has been described. For example,
The present invention is effective even when a small DC magnetic field of about several tens of gauss is used for improving the ignitability. However, the present invention is particularly effective when no DC magnetic field exists in the vacuum vessel.

[0036]

As is clear from the above description, according to the plasma processing method of the first invention of the present application, the inside of the vacuum vessel is evacuated while supplying the gas into the vacuum vessel, and the inside of the vacuum vessel is maintained at a predetermined pressure. While being controlled, the antenna provided in the vacuum vessel facing the substrate placed on the substrate electrode in the vacuum vessel is sandwiched between the antenna and the vacuum vessel, and has an outer dimension smaller than that of the antenna. By applying high-frequency power of a frequency of 50 MHz to 3 GHz through a through hole provided in a large dielectric plate, a plasma is generated in a vacuum vessel,
A plasma processing method for processing a substrate, comprising: a first plasma formed in a groove-shaped space between a first conductor ring provided around an antenna and closely attached to a dielectric plate and the antenna; "A trap", "a second conductor ring provided around the first conductor ring and provided in close contact with the dielectric plate, and having an inner diameter smaller than the outer shape of the dielectric plate"; The substrate is processed in a state where the plasma distribution on the substrate is controlled by the "second plasma trap comprising a groove-shaped space between the substrates," so that even if the distance between the antenna and the substrate is reduced, uniformity is improved, and And a plasma processing method capable of obtaining a high ion saturation current density.

Further, according to the plasma processing method of the second invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled at a predetermined pressure. An antenna provided in a vacuum vessel facing a substrate placed on a substrate electrode, a through-hole provided in a dielectric plate sandwiched between the antenna and the vacuum vessel and having substantially the same external dimensions as the antenna. Through the frequency 50MHz to 3
A plasma processing method for processing a substrate by applying high frequency power of GHz to generate plasma in a vacuum vessel and process a substrate, wherein a dielectric ring is provided in close contact with a peripheral portion of a dielectric plate. A first plasma trap including a groove-shaped space provided between the antenna and a first conductor ring provided in the portion and closely attached to the dielectric ring "
"The second conductor ring, which is provided at the periphery of the first conductor ring and is provided in close contact with the dielectric ring, and has an inner diameter smaller than the outer shape of the dielectric ring, Second Plasma Trap Consisting of Groove-shaped Space Between "
In order to process the substrate in a state where the plasma distribution on the substrate is controlled by the above, a plasma processing method that provides good uniformity and a high ion saturation current density even when the distance between the antenna and the substrate is reduced is provided. Can be provided.

Further, according to the plasma processing apparatus of the third invention of the present application, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A substrate electrode for mounting the substrate in the container, an antenna provided to face the substrate electrode, a dielectric plate sandwiched between the antenna and the vacuum container, and having a larger outer dimension than the antenna, A plasma processing apparatus comprising: a high-frequency power supply capable of supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna through a through hole provided in a dielectric plate; A first plasma trap comprising a groove-shaped space between the antenna and the first conductor ring provided in close contact with the dielectric plate, and a "first plasma trap provided in the periphery of the first conductor ring and in close contact with the dielectric plate; I And a second plasma trap comprising a groove-shaped space between the second conductor ring having an inner diameter smaller than the outer diameter of the dielectric plate and the first conductor ring. Can provide a plasma processing apparatus having good uniformity and a high ion saturation current density even if the distance is reduced.

According to the plasma processing apparatus of the fourth invention of the present application, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A substrate electrode for mounting the substrate in the container, an antenna provided to face the substrate electrode, a dielectric plate sandwiched between the antenna and the vacuum container, and having substantially the same outer dimensions as the antenna, What is claimed is: 1. A plasma processing apparatus comprising: a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna through a through hole provided in a dielectric plate; A ring is provided, and “a first plasma trap formed of a groove-shaped space between the antenna and a first conductor ring provided around the antenna and closely attached to the dielectric ring”; A groove formed between the first conductor ring and a second conductor ring which is provided at a peripheral portion of the one conductor ring, is provided in close contact with the dielectric ring, and has an inner diameter smaller than the outer shape of the dielectric ring; Since the second plasma trap having the above space is provided, it is possible to provide a plasma processing apparatus having good uniformity and a high ion saturation current density even when the distance between the antenna and the substrate is reduced. it can.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a plasma processing apparatus used in a first embodiment of the present invention.

FIG. 2 is a sectional view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

FIG. 3 is a sectional view showing a configuration of a plasma processing apparatus used in a third embodiment of the present invention.

FIG. 4 is a plan view of an antenna used in a third embodiment of the present invention.

FIG. 5 is a sectional view showing a configuration of a plasma processing apparatus used in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Gas supply device 3 Pump 4 High frequency power supply for antenna 5 Antenna 6 Dielectric plate 7 Through hole 8 Substrate electrode 9 Substrate 10 High frequency power supply for substrate electrode 11 Insulation cover 12 First conductor ring 13 First plasma trap 14 Second conductor Ring 15 2nd plasma trap

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H05H 1/46 H01L 21/302 B F term (reference) 4G075 AA24 BC02 BC04 BC06 CA25 CA47 CA65 EB01 EB41 4K030 FA03 GA02 JA18 KA20 KA30 KA45 4K057 DA11 DA16 DB06 DD01 DE06 DM18 DM28 DN01 5F004 AA01 BA20 BB07 BB11 BB13 BB29 CA06 DA04 5F045 BB01 EH02 EH03 EH04 EH06 EH11 EH16 EH20

Claims (10)

[Claims] 1. While evacuating the inside of a vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure,
An antenna provided in the vacuum vessel facing the substrate placed on the substrate electrode in the vacuum vessel, provided on a dielectric plate sandwiched between the antenna and the vacuum vessel and having a larger outer dimension than the antenna A plasma processing method for generating plasma in a vacuum vessel and processing a substrate by applying high-frequency power having a frequency of 50 MHz to 3 GHz through a through hole provided, the method comprising: A first plasma trap comprising a groove-shaped space between the first conductor ring provided closely to the dielectric plate and the antenna, and "a first plasma trap provided in the periphery of the first conductor ring, and
The second plasma ring which is provided in close contact with the dielectric plate and has an inner diameter smaller than the outer shape of the dielectric plate, and a second plasma trap comprising a groove-shaped space between the first conductor ring " A plasma processing method, wherein the substrate is processed in a state where the plasma distribution is controlled. 2. The method according to claim 1, further comprising evacuating the vacuum vessel while supplying gas into the vacuum vessel, and controlling the inside of the vacuum vessel to a predetermined pressure.
An antenna provided in the vacuum vessel facing the substrate placed on the substrate electrode in the vacuum vessel, provided on a dielectric plate which is sandwiched between the antenna and the vacuum vessel and has almost the same outer dimensions as the antenna. A plasma processing method in which plasma is generated in a vacuum vessel by applying high-frequency power having a frequency of 50 MHz to 3 GHz through a through hole provided, and a substrate is processed. A body ring is provided, "provided at the periphery of the antenna, and
A first plasma trap comprising a groove-shaped space between the antenna and the first conductor ring provided in close contact with the dielectric ring, and "a first plasma trap provided around the first conductor ring, and
A second plasma trap, which is provided in close contact with the dielectric ring and has an inner diameter smaller than the outer shape of the dielectric ring, and a second plasma trap including a groove-shaped space between the first conductor ring " A plasma processing method, comprising processing a substrate while controlling a plasma distribution on the substrate. 3. The plasma processing method according to claim 1, wherein a short pin for short-circuiting the antenna and the vacuum vessel is provided in order to provide an isotropic electromagnetic field distribution to the antenna. 4. The plasma processing method according to claim 1, wherein the surface of the antenna is covered with an insulating cover. 5. The plasma processing method according to claim 1, wherein no DC magnetic field exists in the vacuum vessel. 6. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate electrode for placing a substrate in the vacuum container. An antenna provided to face the substrate electrode, a dielectric plate sandwiched between the antenna and the vacuum vessel, and having a larger outer dimension than the antenna, and a through-hole provided in the dielectric plate to the antenna. What is claimed is: 1. A plasma processing apparatus comprising a high-frequency power supply capable of supplying a high-frequency power having a frequency of 50 MHz to 3 GHz, comprising: a first conductor ring provided at a peripheral portion of an antenna and provided in close contact with a dielectric plate; A first plasma trap comprising a groove-shaped space between the first conductor ring and an antenna;
And a second plasma trap, which is provided in close contact with the dielectric plate and has a groove-shaped space between the second conductor ring having an inner diameter smaller than the outer shape of the dielectric plate and a first conductor ring. A plasma processing apparatus. 7. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a substrate electrode for placing a substrate in the vacuum container. An antenna provided opposite to the substrate electrode, a dielectric plate sandwiched between the antenna and the vacuum vessel, and having substantially the same outer dimensions as the antenna, and a through-hole provided in the dielectric plate. What is claimed is: 1. A plasma processing apparatus comprising: a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz, wherein a dielectric ring is provided in close contact with a peripheral portion of a dielectric plate; And a first plasma trap comprising a groove-shaped space between the antenna and the first conductor ring provided in close contact with the dielectric ring, and "a first plasma trap provided around the first conductor ring, and Dielectric material A second plasma trap, which is provided in close contact with the ring and has a groove-shaped space between the second conductor ring having an inner diameter smaller than the outer diameter of the dielectric ring and a first conductor ring. A plasma processing apparatus characterized by the above-mentioned. 8. The plasma processing apparatus according to claim 6, further comprising a short pin for short-circuiting the antenna and the vacuum vessel. 9. The plasma processing apparatus according to claim 6, wherein a surface of the antenna is covered with an insulating cover. 10. The plasma processing apparatus according to claim 6, wherein a coil or a permanent magnet for applying a DC magnetic field is not provided in the vacuum vessel.