JP2001234263A - Electrically conductive powder, its producing method and ceramic element - Google Patents
Electrically conductive powder, its producing method and ceramic elementInfo
- Publication number
- JP2001234263A JP2001234263A JP2000042975A JP2000042975A JP2001234263A JP 2001234263 A JP2001234263 A JP 2001234263A JP 2000042975 A JP2000042975 A JP 2000042975A JP 2000042975 A JP2000042975 A JP 2000042975A JP 2001234263 A JP2001234263 A JP 2001234263A
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- nickel
- conductive powder
- boron
- glass
- boride
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、導電性粉末、特に
金属ニッケルを含む導電性粉末と、その製造方法、およ
びセラミック素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive powder, particularly a conductive powder containing metallic nickel, a method for producing the same, and a ceramic element.
【０００２】[0002]
【従来の技術】従来より、ＰＴＣサーミスタに用いられ
る半導体セラミックを得る場合は、その電極材料には、
主成分として用いられているチタン酸バリウムとオーミ
ック接触可能な金属ニッケルを含む導電性粉末が用いら
れている。2. Description of the Related Art Conventionally, when a semiconductor ceramic used for a PTC thermistor is obtained, its electrode material includes:
A conductive powder containing metallic nickel capable of ohmic contact with barium titanate used as a main component is used.
【０００３】しかしながら、ニッケル金属は酸化しやす
く、高温で焼き付けた場合、酸化してしまうという問題
点があった。また、ニッケル以外の金属を用いた場合、
ＰＴＣサーミスタの主成分であるチタン酸バリウムとオ
ーミック接触しないため、ＰＴＣ特性上問題があった。However, there is a problem that nickel metal is easily oxidized and oxidized when baked at a high temperature. When a metal other than nickel is used,
Since there is no ohmic contact with barium titanate, which is the main component of the PTC thermistor, there is a problem in PTC characteristics.
【０００４】そこで、ニッケルの耐酸化性を向上させる
べく、金属ニッケルの表面をガラス材でコーティングし
た導電性粉末が提案されている。具体的には、Ｓｉアル
コシキド中に金属ニッケル粉末を分散させ、加水分解す
ることで、金属ニッケル粉末表面にＳｉＯ2をコーティ
ングしたものや、Ｂアルコキシド中に金属ニッケル粉末
を分散させ、加水分解することで、金属ニッケル粉末表
面にＨ2ＢＯ3をコーティングしたものなどが挙げられ
る。[0004] To improve the oxidation resistance of nickel, a conductive powder in which the surface of metallic nickel is coated with a glass material has been proposed. Specifically, by dispersing the metal nickel powder in Si alkoxide and hydrolyzing it, coating the surface of the metal nickel powder with SiO 2 , or dispersing the metal nickel powder in the B alkoxide and hydrolyzing And a material obtained by coating the surface of metallic nickel powder with H 2 BO 3 .
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
方法でコーティングした導電性粉末はニッケルの耐酸化
性の向上が見られるものの、金属ニッケル表面をきれい
に覆うような状態になっておらず、更なる耐酸化性の向
上が求められている。However, although the conductive powder coated by the conventional method shows an improvement in the oxidation resistance of nickel, it does not form a state in which the surface of the metallic nickel is covered cleanly. There is a need for improved oxidation resistance.
【０００６】本発明は、チタン酸バリウムとオーミック
接触可能な金属ニッケルを主成分とし、かつより高い温
度で熱処理を行っても酸化することのない導電性粉末、
およびその製造方法、ならびにその導電性粉末を用いた
セラミック素子を提供することにある。According to the present invention, there is provided a conductive powder mainly composed of metallic nickel which can be in ohmic contact with barium titanate and which is not oxidized even when subjected to a heat treatment at a higher temperature.
Another object of the present invention is to provide a ceramic element using the conductive powder.
【０００７】[0007]
【課題を解決するための手段】本発明は上記のような問
題点に鑑みてなされたものである。本願第１の発明の導
電性粉末は、金属ニッケルと硼素との化合物である硼化
ニッケルを熱処理し、前記硼化ニッケル中の硼素を硼酸
系ガラスとして金属ニッケルの表面に析出させて硼酸系
ガラス層を形成した導電性粉末であって、前記金属ニッ
ケルと前記硼酸系ガラスとが体積比で、０．３５≦金属
ニッケル／硼酸系ガラス≦０．７０の範囲にあることを
特徴とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems. The conductive powder according to the first aspect of the present invention is obtained by heat treating nickel boride, which is a compound of nickel metal and boron, to precipitate boron in the nickel boride as boric acid glass on the surface of the metal nickel to form boric acid glass. A conductive powder having a layer formed thereon, wherein the metal nickel and the borate-based glass have a volume ratio of 0.35 ≦ metal nickel / borate-based glass ≦ 0.70.
【０００８】このような構成にすることによって、金属
ニッケルの表面をきれいに覆うように硼酸系ガラス層を
形成することができ、耐酸化性に優れた導電性粉末とす
ることができる。With this configuration, a borate-based glass layer can be formed so as to cover the surface of metallic nickel cleanly, and a conductive powder having excellent oxidation resistance can be obtained.
【０００９】また、本願第２の発明の導電性粉末は、酸
化珪素でコーティングした、金属ニッケルと硼素との化
合物である硼化ニッケルを熱処理し、前記硼化ニッケル
中の硼素を金属ニッケルの表面に析出させるとともに、
酸化珪素と反応させて硼珪酸系ガラス層を形成した導電
性粉末であって、前記金属ニッケルと前記硼珪酸系ガラ
スとが体積比で、０．３５≦金属ニッケル／硼珪酸系ガ
ラス≦０．７０の範囲にあり、かつ前記硼珪酸系ガラス
に含まれる珪素と硼素とが、ＳｉＯ2とＢ2Ｏ3に換算し
て重量比で、０．４０≦ＳｉＯ2／Ｂ2Ｏ3≦１．００の
範囲にあることを特徴とする。Further, the conductive powder of the second invention of the present application is obtained by heat-treating nickel boride, which is a compound of metallic nickel and boron, coated with silicon oxide, and converting boron in the nickel boride to the surface of metallic nickel. And precipitate
A conductive powder formed by reacting with silicon oxide to form a borosilicate glass layer, wherein the metal nickel and the borosilicate glass have a volume ratio of 0.35 ≦ metal nickel / borosilicate glass ≦ 0. 70, and silicon and boron contained in the borosilicate glass are 0.40 ≦ SiO 2 / B 2 O 3 ≦ 1 in terms of weight ratio in terms of SiO 2 and B 2 O 3 . It is characterized by being in the range of 00.
【００１０】このような構成にすることにより、導電性
粉末の耐酸化性をより向上させることができる。With such a configuration, the oxidation resistance of the conductive powder can be further improved.
【００１１】また、本願第３の発明の導電性粉末の製造
方法は、金属ニッケルと酸化硼素とから硼化ニッケルを
合成する工程と、前記硼化ニッケルを熱処理して、前記
金属ニッケルの表面に前記酸化硼素を硼酸ガラスとして
析出させる工程とからなることを特徴とする。The method for producing a conductive powder according to a third aspect of the present invention includes a step of synthesizing nickel boride from nickel metal and boron oxide; Depositing the boron oxide as borate glass.
【００１２】また、本願第４の発明の導電性粉末の製造
方法においては、前記硼化ニッケルは、酸化珪素でコー
ティングされてなることが好ましい。In the method for producing a conductive powder according to a fourth aspect of the present invention, it is preferable that the nickel boride is coated with silicon oxide.
【００１３】このような製造方法にすることにより、容
易に金属ニッケルの表面をきれいに覆うように硼酸系ガ
ラスをコーティングすることができ、耐酸化性を向上さ
せることができる。According to such a manufacturing method, the borate-based glass can be easily coated so as to cleanly cover the surface of the nickel metal, and the oxidation resistance can be improved.
【００１４】また、本願第５の発明のセラミック素子
は、平板状に焼結させたセラミック素子本体の両主面上
に請求項１または請求項２に記載の導電性粉末を含む電
極を形成したことを特徴とする。According to a fifth aspect of the present invention, there is provided a ceramic element main body which is sintered into a flat plate, and an electrode containing the conductive powder according to the first or second aspect is formed on both main surfaces of the ceramic element body. It is characterized by the following.
【００１５】また、本願第６の発明のセラミック素子に
おいては、前記セラミック素子本体は、チタン酸バリウ
ムを主成分とすることが好ましい。Further, in the ceramic element according to the sixth aspect of the present invention, it is preferable that the main body of the ceramic element contains barium titanate as a main component.
【００１６】このような組成にすることによって、十分
にＰＴＣ特性を発現させたＰＴＣサーミスタとすること
ができる。By adopting such a composition, a PTC thermistor having sufficient PTC characteristics can be obtained.
【００１７】[0017]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。 （実施形態１）あらかじめ硼化ニッケル粉末を用意し、
これとテルピノールからなる溶剤とエチルセルロースと
からなるワニスとを１：１の比で混合し、電極ペースト
を作製した。次に、平板状に焼結させたＢａＴｉＯ3を
主成分とする半導体セラミックの一方主面上に、上記硼
化ニッケルペーストを印刷し、表１に示すような温度で
大気中で熱処理を行うことによって、硼化ニッケル中の
硼素を金属ニッケルの周囲を被覆するように析出させ、
硼酸系ガラスを形成するとともに、ニッケル系電極とし
て半導体セラミックに焼き付けた。なお、金属ニッケル
と硼酸系ガラスとの比は硼化ニッケルの種類を変えるこ
とによって調節した。Embodiments of the present invention will be described below. (Embodiment 1) A nickel boride powder is prepared in advance,
This was mixed with a solvent composed of terpinol and a varnish composed of ethyl cellulose at a ratio of 1: 1 to prepare an electrode paste. Next, the above-mentioned nickel boride paste is printed on one main surface of a semiconductor ceramic mainly composed of BaTiO 3 sintered in a flat plate shape, and heat-treated in the air at a temperature shown in Table 1. Thus, boron in nickel boride is deposited so as to cover the periphery of nickel metal,
A boric glass was formed and baked on a semiconductor ceramic as a nickel electrode. The ratio between metallic nickel and borate glass was adjusted by changing the type of nickel boride.
【００１８】なお、比較例として、硼化ニッケルの代わ
りに、Ｂアルコキシド中に金属ニッケル粉末を分散さ
せ、加水分解することで、金属ニッケル粉末表面にＨ2
ＢＯ3をコーティングしたものを用い、上記と同様の方
法で半導体セラミックの一方主面上に電極として形成し
た。As a comparative example, instead of nickel boride, a metal nickel powder was dispersed in a B alkoxide and hydrolyzed, whereby H 2 was added to the surface of the metal nickel powder.
An electrode was formed on one main surface of the semiconductor ceramic in the same manner as described above, using a material coated with BO 3 .
【００１９】その後、それぞれの他方主面上にＩｎ−Ｇ
ａ電極を塗布し、これらを電極としてセラミック素子を
作製し、室温抵抗値を測定して電極単体の室温抵抗値を
算出し、評価を行った。その結果を表１に示す。なお、
金属ニッケルと硼酸系ガラスの体積比は、用いた硼化ニ
ッケル中に含まれる金属ニッケルと硼素量から算出し
た。また、表１中の※印は本発明の範囲外を示し、○印
は測定したニッケル系電極単体の室温抵抗値が０．０４
Ω以下のもので、半導体セラミックに形成されているニ
ッケル系電極が十分使用できるもの、×印は形成されて
いるニッケル系電極が酸化されて大幅に室温抵抗値が上
昇したものであり、電極として使用困難なものを示す。Thereafter, In-G is formed on each of the other main surfaces.
An a electrode was applied, and a ceramic element was prepared using these electrodes. The room temperature resistance was measured to calculate the room temperature resistance of the electrode alone, and the evaluation was performed. Table 1 shows the results. In addition,
The volume ratio between the metallic nickel and the borate-based glass was calculated from the amounts of metallic nickel and boron contained in the used nickel boride. In Table 1, an asterisk indicates a value outside the range of the present invention, and a circle indicates that the measured room-temperature resistance of the nickel-based electrode alone was 0.04.
Ω or less, the nickel-based electrode formed on the semiconductor ceramic can be used satisfactorily, and the × mark indicates that the formed nickel-based electrode has been oxidized and the room temperature resistance has increased significantly. Indicates those that are difficult to use.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表１に示すように、従来のＨ2ＢＯ3コーテ
ィングの金属ニッケル粉末を用いたセラミック素子が５
００℃の熱処理温度で金属ニッケル粉末が酸化して室温
抵抗値が上昇してしまうのに比べ、本発明の範囲にある
導電性粉末を用いたセラミック素子は８００℃でも金属
ニッケル粉末が酸化しないことから耐酸化性が大幅に向
上し、低抵抗の状態を保っていることがわかる。 （実施形態２）導電性粉末材料としてＳｉＯ2コート硼
化ニッケルを用意し、これとテルピノールからなる溶剤
とエチルセルロースとからなるワニスとを１：１の比で
混合し、電極ペーストを作製した。次に、この電極ペー
ストを平板状に焼結させたアルミナ基板の一主面上にペ
ースト印刷し、表２，３に示すような温度で大気中で熱
処理を行うことによって、硼化ニッケル中の硼素を金属
ニッケルの周囲を被覆するように析出させ、周囲のＳｉ
Ｏ2と反応させて硼珪酸系ガラスとするとともに、ニッ
ケル系電極として焼き付けた。As shown in Table 1, there are 5 ceramic elements using the conventional nickel metal powder coated with H 2 BO 3.
The metal nickel powder is oxidized at the heat treatment temperature of 00 ° C. and the room temperature resistance is increased, whereas the ceramic element using the conductive powder within the scope of the present invention does not oxidize the metal nickel powder even at 800 ° C. This shows that the oxidation resistance is significantly improved and the state of low resistance is maintained. (Embodiment 2) An electrode paste was prepared by preparing SiO 2 -coated nickel boride as a conductive powder material, mixing a solvent composed of terpinol and a varnish composed of ethyl cellulose at a ratio of 1: 1. Next, this electrode paste was paste-printed on one main surface of an alumina substrate sintered in a flat plate shape, and heat-treated in the air at a temperature shown in Tables 2 and 3 to obtain a nickel boride. Boron is deposited so as to cover the periphery of the nickel metal, and the surrounding Si is deposited.
The borosilicate glass was reacted with O 2 and baked as a nickel electrode.
【００２２】そして、ニッケル系電極の室温抵抗値を測
定し、評価を行った。その結果を表２、表３に示す。な
お、表２は硼珪酸系ガラス中のＳｉＯ2とＢ2Ｏ3との比
ＳｉＯ2／Ｂ2Ｏ3を１．０に固定し、金属ニッケルと硼
珪酸ガラスとの比を変動させたもの、表３は金属ニッケ
ルと硼珪酸ガラスとの比金属ニッケル／硼珪酸ガラスを
０．４５に固定し、硼珪酸ガラス中のＳｉＯ2とＢ2Ｏ3
との比を変動させたものを示す。また、硼珪酸ガラス中
のＳｉＯ2とＢ2Ｏ3との比は用いた硼化ニッケル中のＢ
量とＳｉＯ2量から算出した。また、表２中の※印は本
発明の範囲外を示し、○印および×印は表１に準ずる。Then, the room temperature resistance of the nickel-based electrode was measured and evaluated. The results are shown in Tables 2 and 3. Note that Table 2 is intended to secure the ratio SiO 2 / B 2 O 3 and SiO 2 and B 2 O 3 of borosilicate glass 1.0, was varied the ratio of metallic nickel and borosilicate glass Table 3 shows the ratio of metallic nickel to borosilicate glass. Metallic nickel / borosilicate glass was fixed at 0.45, and SiO 2 and B 2 O 3 in borosilicate glass were fixed.
The figure shows that the ratio was varied. The ratio of SiO 2 to B 2 O 3 in the borosilicate glass is determined by the ratio of B 2 in the nickel boride used.
It was calculated from the amount and the amount of SiO 2 . In Table 2, the asterisks indicate out of the scope of the present invention, and the circles and crosses conform to Table 1.
【００２３】[0023]
【表２】 [Table 2]
【００２４】[0024]
【表３】 [Table 3]
【００２５】表２、表３に示すように、本発明の範囲に
ある導電性粉末を用いたセラミック素子は、耐酸化性に
優れていることがわかる。また、セラミック素子の抵抗
値とほとんど変わらず、電極として十分使用できること
がわかる。また、硼化ニッケルにＳｉＯ2をコートした
ものは、さらに耐酸化性が向上しており、１０００℃で
熱処理しても金属ニッケルが酸化されないことがわか
る。As shown in Tables 2 and 3, it can be seen that the ceramic element using the conductive powder within the scope of the present invention has excellent oxidation resistance. In addition, it can be seen that the resistance value is almost the same as the resistance value of the ceramic element and can be sufficiently used as an electrode. In addition, it can be seen that the one obtained by coating nickel boride with SiO 2 has further improved oxidation resistance, and that even when heat-treated at 1000 ° C., the metal nickel is not oxidized.
【００２６】以下、請求項１および請求項２における各
数値の限定理由について実施の形態に基づいて説明す
る。請求項１において、金属ニッケル／硼酸系ガラスを
体積比で０．３５〜０．７０に限定したのは、試料番号
１−１，１−２，１−３のように、金属ニッケル／硼酸
系ガラスが０．３５より小さい場合には、金属ニッケル
を硼酸系ガラスが十分にコーティングできていないこと
により金属ニッケルが酸化してしまい、導電性が得られ
ず好ましくないからである。一方、試料番号１−１３，
１−１４，１−１５のように、金属ニッケル／硼酸系ガ
ラスが０．７０より大きい場合には、金属ニッケルが未
焼結となり、導電性が得られず好ましくないからであ
る。The reasons for limiting the numerical values in claims 1 and 2 will be described below based on an embodiment. In claim 1, the volume ratio of the metal nickel / borate glass is limited to 0.35 to 0.70, as in sample numbers 1-1, 1-2 and 1-3. If the glass is smaller than 0.35, the metal nickel is not sufficiently coated with the borate-based glass, so that the metal nickel is oxidized, and the conductivity cannot be obtained, which is not preferable. On the other hand, sample numbers 1-13,
If the metal nickel / borate glass is larger than 0.70 as in 1-14 and 1-15, the metal nickel becomes unsintered, and no conductivity is obtained, which is not preferable.
【００２７】また、請求項２において、金属ニッケル金
属ニッケル／硼珪酸系ガラスを体積比で０．３５〜０．
７０に限定したのは、試料番号２−１，２−２，２−３
のように、金属ニッケル／硼珪酸系ガラスが０．３５よ
り小さい場合には、金属ニッケルを硼珪酸系ガラスが十
分にコーティングできていないことにより金属ニッケル
が酸化してしまい、耐酸化性が向上せず好ましくないか
らである。一方、試料番号２−１３，２−１４，２−１
５のように、金属ニッケル／硼珪酸系ガラスが０．７０
より大きい場合には、金属ニッケルが未焼結となり、導
電性が得られず好ましくないからである。Further, in claim 2, the volume ratio of metallic nickel metallic nickel / borosilicate glass is 0.35 to 0.5.
Sample numbers 2-1, 2-2 and 2-3 were limited to 70.
When the metallic nickel / borosilicate glass is smaller than 0.35, the metallic nickel is oxidized due to insufficient coating of the metallic nickel with the borosilicate glass, thereby improving the oxidation resistance. This is not preferred. On the other hand, sample numbers 2-13, 2-14, 2-1
5, the metal nickel / borosilicate glass is 0.70
If it is larger than that, the metallic nickel becomes unsintered, and no conductivity is obtained, which is not preferable.
【００２８】また、請求項２において、硼珪酸ガラス中
に含まれるＳｉ量とＢ量をＳｉＯ2とＢ2Ｏ3に換算し
て、ＳｉＯ2／Ｂ2Ｏ3を重量比で０．４０〜１．００に
限定したのは、試料番号２−１６〜２−２１のように、
このような範囲に硼珪酸ガラス中に含まれるＳｉ量とＢ
量に調整することによって、耐酸化性をさらに向上する
ことができるからである。Further, in claim 2, the amount of Si and the amount of B contained in the borosilicate glass are converted into SiO 2 and B 2 O 3 , and the weight ratio of SiO 2 / B 2 O 3 is 0.40 to 0.40. It was limited to 1.00, as in sample numbers 2-16 to 2-21,
Within such a range, the amount of Si contained in the borosilicate glass and B
By adjusting the amount, the oxidation resistance can be further improved.
【００２９】[0029]
【発明の効果】本発明の導電性粉末を用いれば、金属ニ
ッケルの周囲を硼酸系ガラスできれいにコーティングで
きるので、金属ニッケルを酸化させることなく、より高
い温度で熱処理を行うことができる。また、硼化ニッケ
ルを酸化珪素でコーティングすることにより、金属ニッ
ケルの周囲を硼珪酸系ガラスでコーティングすることが
できるので、さらに高い温度での熱処理を行うことがで
きる。The use of the conductive powder of the present invention makes it possible to coat the periphery of metallic nickel with a boric glass, so that heat treatment can be performed at a higher temperature without oxidizing metallic nickel. Further, by coating nickel boride with silicon oxide, the periphery of metal nickel can be coated with borosilicate glass, so that heat treatment at a higher temperature can be performed.
【００３０】また、チタン酸バリウムとオーミック接触
することから、ＰＴＣサーミスタに特に有用な電極材料
として用いることができる。Further, since it comes into ohmic contact with barium titanate, it can be used as an electrode material particularly useful for PTC thermistors.
Claims (6)
化ニッケルを熱処理し、前記硼化ニッケル中の硼素を硼
酸系ガラスとして金属ニッケルの表面に析出させて硼酸
系ガラス層を形成した導電性粉末であって、 前記金属ニッケルと前記硼酸系ガラスとが体積比で、
０．３５≦金属ニッケル／硼酸系ガラス≦０．７０の範
囲にあることを特徴とする導電性粉末。1. A conductive material in which nickel boride, which is a compound of metallic nickel and boron, is heat-treated, and boron in the nickel boride is precipitated as boric glass on the surface of metallic nickel to form a boric glass layer. Powder, wherein the metal nickel and the borate-based glass are in a volume ratio,
A conductive powder, wherein 0.35 ≦ metal nickel / borate glass ≦ 0.70.
ケルと硼素との化合物である硼化ニッケルを熱処理し、
前記硼化ニッケル中の硼素を金属ニッケルの表面に析出
させるとともに、酸化珪素と反応させて硼珪酸系ガラス
層を形成した導電性粉末であって、 前記金属ニッケルと前記硼珪酸系ガラスとが体積比で、
０．３５≦金属ニッケル／硼珪酸系ガラス≦０．７０の
範囲にあり、かつ前記硼珪酸系ガラスに含まれる珪素と
硼素とが、ＳｉＯ2とＢ2Ｏ3に換算して重量比で、 ０．４０≦ＳｉＯ2／Ｂ2Ｏ3≦１．００ の範囲にあることを特徴とする導電性粉末。2. Heat treating nickel boride, which is a compound of metallic nickel and boron, coated with silicon oxide,
A conductive powder in which boron in the nickel boride is precipitated on the surface of the metal nickel and reacted with silicon oxide to form a borosilicate glass layer, wherein the metal nickel and the borosilicate glass have a volume By ratio
0.35 ≦ metal nickel / borosilicate glass ≦ 0.70, and silicon and boron contained in the borosilicate glass are expressed in terms of weight ratio in terms of SiO 2 and B 2 O 3 , A conductive powder, wherein 0.40 ≦ SiO 2 / B 2 O 3 ≦ 1.00.
ニッケルを熱処理して、前記金属ニッケルの表面に前記
酸化硼素を硼酸系ガラスとして析出させることを特徴と
する導電性粉末の製造方法。3. A method for producing a conductive powder, comprising heat treating nickel boride, which is a compound of metallic nickel and boron, to precipitate the boron oxide as boric glass on the surface of the metallic nickel.
ングされてなることを特徴とする請求項３に記載の導電
性粉末の製造方法。4. The method for producing a conductive powder according to claim 3, wherein said nickel boride is coated with silicon oxide.
の両主面上に請求項１または請求項２に記載の導電性粉
末を含む電極を形成したことを特徴とするセラミック素
子。5. A ceramic element comprising an electrode containing the conductive powder according to claim 1 formed on both main surfaces of a ceramic element body sintered in a flat plate shape.
リウムを主成分とすることを特徴とする請求項５に記載
のセラミック素子。6. The ceramic element according to claim 5, wherein the main body of the ceramic element mainly contains barium titanate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000042975A JP2001234263A (en) | 2000-02-21 | 2000-02-21 | Electrically conductive powder, its producing method and ceramic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000042975A JP2001234263A (en) | 2000-02-21 | 2000-02-21 | Electrically conductive powder, its producing method and ceramic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001234263A true JP2001234263A (en) | 2001-08-28 |
Family
ID=18565967
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000042975A Pending JP2001234263A (en) | 2000-02-21 | 2000-02-21 | Electrically conductive powder, its producing method and ceramic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001234263A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8097303B2 (en) * | 2003-05-01 | 2012-01-17 | Wisconsin Alumni Research Foundation | Methods for producing multilayered, oxidation-resistant structures on substrates |
| WO2015115422A1 (en) * | 2014-01-28 | 2015-08-06 | 日立金属株式会社 | Ptc element and heating module |
| CN109181391A (en) * | 2018-09-20 | 2019-01-11 | 杭州电盾装饰材料有限公司 | Inorganic compound conductive powder and its preparation method and application |
-
2000
- 2000-02-21 JP JP2000042975A patent/JP2001234263A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8097303B2 (en) * | 2003-05-01 | 2012-01-17 | Wisconsin Alumni Research Foundation | Methods for producing multilayered, oxidation-resistant structures on substrates |
| WO2015115422A1 (en) * | 2014-01-28 | 2015-08-06 | 日立金属株式会社 | Ptc element and heating module |
| CN109181391A (en) * | 2018-09-20 | 2019-01-11 | 杭州电盾装饰材料有限公司 | Inorganic compound conductive powder and its preparation method and application |
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