JP2001230393A5 - Method for separating composite members and method for manufacturing thin films - Google Patents
Method for separating composite members and method for manufacturing thin films Download PDFInfo
- Publication number
- JP2001230393A5 JP2001230393A5 JP2000361346A JP2000361346A JP2001230393A5 JP 2001230393 A5 JP2001230393 A5 JP 2001230393A5 JP 2000361346 A JP2000361346 A JP 2000361346A JP 2000361346 A JP2000361346 A JP 2000361346A JP 2001230393 A5 JP2001230393 A5 JP 2001230393A5
- Authority
- JP
- Japan
- Prior art keywords
- separation
- thin films
- composite members
- manufacturing thin
- separating composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
【特許請求の範囲】
【請求項１】 分離層と前記分離層上にある移設層とを有する第１の部材と、第２の部材とが密着した複合部材を、前記第１の部材と前記第２の部材との密着界面とは異なる位置において分離する複合部材の分離方法であって、
前記密着界面に対して非対称な力を前記複合部材の端部に作用させることにより、前記複合部材に前記第１の部材の表面から前記移設層を通り前記分離層に至る亀裂を形成する工程を含む予備分離工程と、
前記分離層に沿って前記亀裂を成長させる工程を含む本分離工程と、
を有する分離方法。
【請求項２】 前記予備分離工程では、固体の楔或いは非対称な基板保持機構のうち少なくともいずれか一方を用いて、前記密着界面に対して非対称な力を前記複合部材の端部に作用させる請求項１に記載の分離方法。
【請求項３】 前記楔は、非対称な一対の傾斜した当接面を有する請求項２に記載の分離方法。
【請求項４】 前記楔は、前記第１の部材に当接される第１の当接面と前記第２の部材に当接される第２の当接面とを有し、前記第１の当接面が前記密着界面となす角度が、前記第２の当接面が前記密着界面となす角度より大きい請求項２に記載の分離方法。
【請求項５】 前記予備分離工程では、前記楔を、密着界面と平行に移動させて前記複合部材の端部に挿入する請求項２に記載の分離方法。
【請求項６】 前記楔は、前記第１の部材に当接される第１の当接面と前記第２の部材に当接される第２の当接面とを有し、前記楔は、前記複合部材に挿入される際に前記第１の当接面が前記第２の当接面よりも先に前記複合部材に当接する構造を有する請求項２に記載の分離方法。
【請求項７】 前記本分離工程では、前記亀裂に流体を進入させて前記亀裂を成長させる請求項１に記載の分離方法。
【請求項８】 前記予備分離工程では、前記複合部材を回転させずに前記亀裂を形成し、前記本分離工程では、前記複合部材を回転させながら前記亀裂を成長させる請求項１に記載の分離方法。
【請求項９】 分離層と前記分離層上にある移設層とを有する第１の部材と第２の部材とを密着させ、複合部材を形成する工程と、
前記第１の部材と前記第２の部材との密着界面とは異なる位置において前記複合部材を分離する分離工程と、
を含む薄膜の製造方法において、
前記分離工程は、
前記密着界面に対して非対称な力を前記複合部材の端部に作用させることにより、前記複合部材に前記第一の部材の表面から前記移設層を通り前記分離層に至る亀裂を形成する第１工程と、
前記分離層に沿って前記亀裂を成長させる第２工程と、
を有する薄膜の製造方法。
[Claims]
1. A composite member in which a first member having a separation layer and a transfer layer on the separation layer and a second member are in close contact with each other is formed by the first member and the second member. It is a method of separating composite members that separates at a position different from the close contact interface.
A step of forming a crack in the composite member from the surface of the first member through the transfer layer to the separation layer by applying an asymmetrical force to the end portion of the composite member with respect to the close contact interface. Preliminary separation process including
The main separation step including the step of growing the crack along the separation layer, and
Separation method having.
2. In the preliminary separation step, at least one of a solid wedge and an asymmetric substrate holding mechanism is used to apply an asymmetric force with respect to the close contact interface to the end portion of the composite member. Item 1. The separation method according to item 1.
3. The separation method according to claim 2 , wherein the wedge has a pair of asymmetrical inclined contact surfaces.
Wherein said wedge, and a second abutment surface which abuts against the first of the second member and the abutment face abutting the first member, the first those angles which contact surface makes with the bonding interface is a method of separation according to the angle larger claim 2 wherein said second contact surface makes with the bonding interface of the.
The method according to claim 5, wherein the preliminary separation step, the separation method of claim 2 for inserting the wedge, the end portion of the composite member by parallel transfer and bonding interface.
Wherein said wedge has a second abutment surface which abuts against the first of the second member and the abutment face abutting the first member, said wedge The separation method according to claim 2 , further comprising a structure in which the first contact surface comes into contact with the composite member before the second contact surface when inserted into the composite member.
The method according to claim 7, wherein the separation step, the separation method of claim 1 which is advanced fluid growing said cracks in said crack.
The method according to claim 8, wherein the preliminary separation step, the cracks to form the composite member without rotating, the present separation process, the separation according to claim 1 for growing the crack while rotating the composite member Method.
9. brought into close contact with a first member and a relocation is on the the separation layer the separation layer layer and the second member, forming a composite member,
A separation step of separating the composite member at a position different from the contact interface between the first member and the second member.
In the method for producing a thin film containing
The separation step is
By applying an asymmetrical force to the end portion of the composite member with respect to the close contact interface, a first crack is formed in the composite member from the surface of the first member through the transfer layer to the separation layer. Process and
A second step of growing the cracks along the separation layer,
A method for producing a thin film having.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000361346A JP4311702B2 (en) | 1999-12-08 | 2000-11-28 | Method for separating composite member and method for producing thin film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-349209 | 1999-12-08 | ||
| JP34920999 | 1999-12-08 | ||
| JP2000361346A JP4311702B2 (en) | 1999-12-08 | 2000-11-28 | Method for separating composite member and method for producing thin film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001230393A JP2001230393A (en) | 2001-08-24 |
| JP2001230393A5 true JP2001230393A5 (en) | 2006-07-13 |
| JP4311702B2 JP4311702B2 (en) | 2009-08-12 |
Family
ID=26578907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000361346A Expired - Fee Related JP4311702B2 (en) | 1999-12-08 | 2000-11-28 | Method for separating composite member and method for producing thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4311702B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2823373B1 (en) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | DEVICE FOR CUTTING LAYER OF SUBSTRATE, AND ASSOCIATED METHOD |
| JP2006216891A (en) * | 2005-02-07 | 2006-08-17 | Tokyo Univ Of Agriculture & Technology | Manufacturing method of thin-film element structure, and functional base substance therefor |
| JP4731365B2 (en) * | 2006-03-20 | 2011-07-20 | 日本碍子株式会社 | Heating apparatus and manufacturing method thereof |
| US8048777B2 (en) * | 2006-09-29 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| FR2906933B1 (en) * | 2006-10-06 | 2009-02-13 | Commissariat Energie Atomique | DEVICE FOR SEPARATING A STACKED STRUCTURE AND ASSOCIATED METHOD |
| JP5703853B2 (en) * | 2011-03-04 | 2015-04-22 | 信越半導体株式会社 | Manufacturing method of bonded wafer |
| JP2013149853A (en) * | 2012-01-20 | 2013-08-01 | Shin Etsu Chem Co Ltd | Method for manufacturing substrate with thin film |
| FR2995441B1 (en) * | 2012-09-07 | 2015-11-06 | Soitec Silicon On Insulator | DEVICE FOR SEPARATING TWO SUBSTRATES |
| FR2995445B1 (en) * | 2012-09-07 | 2016-01-08 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A STRUCTURE FOR SUBSEQUENT SEPARATION |
| JP6014477B2 (en) * | 2012-12-04 | 2016-10-25 | 東京エレクトロン株式会社 | Peeling device, peeling system and peeling method |
| JP6101084B2 (en) * | 2013-01-17 | 2017-03-22 | 株式会社ディスコ | Separation device |
| KR102449304B1 (en) * | 2019-10-15 | 2022-09-29 | 주식회사 엘지화학 | Apparatus for analysis for adhesive multi-layer film and method thereof |
-
2000
- 2000-11-28 JP JP2000361346A patent/JP4311702B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2001230393A5 (en) | Method for separating composite members and method for manufacturing thin films | |
| US9925755B2 (en) | Clamping apparatus for cleaving a bonded wafer structure and methods for cleaving | |
| EP1107295A3 (en) | Composite member separating method, thin film manufacturing method, and composite member separating apparatus | |
| JP4800593B2 (en) | Manufacturing method of heterogeneous structure | |
| EP1006567A3 (en) | Method of manufacturing semiconductor wafer method of using and utilizing the same | |
| WO2006015246A3 (en) | Method and system for fabricating a strained semiconductor layer | |
| FR2935537A1 (en) | MOLECULAR ADHESION INITIATION METHOD | |
| JP2000223683A5 (en) | Method for separating composite members, method for transferring transfer layer, and method for manufacturing SOI substrate | |
| EP1050901A3 (en) | Method of separating composite member and process for producing thin film | |
| JP2003124208A5 (en) | ||
| FR2957190A1 (en) | PROCESS FOR PRODUCING A MULTILAYER STRUCTURE WITH THERMOMECHANICAL EFFECT DETOURAGE | |
| JP6239576B2 (en) | Manufacturing method of wire grid polarizer | |
| EP1396883A3 (en) | Substrate and manufacturing method therefor | |
| FR2947380A1 (en) | METHOD OF COLLAGE BY MOLECULAR ADHESION. | |
| FR2969378A1 (en) | THREE-DIMENSIONAL COMPOSITE STRUCTURE HAVING MULTIPLE LAYERS OF ALIGNMENT MICROCOMPONENTS | |
| FR2857502A1 (en) | SUBSTRATES FOR CONSTRAINTS SYSTEMS | |
| FR2798615A1 (en) | DEVICE AND METHOD FOR PRODUCING PARQUET PANELS | |
| WO2002009176A3 (en) | Method for applying adjusting marks on a semiconductor disk | |
| EP0938107A3 (en) | Method for manufacturing electronic parts and apparatus for manufacturing thin films | |
| EP0933822A3 (en) | Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element | |
| JPH0467650A (en) | Manufacture of semiconductor device | |
| WO2004051724A8 (en) | Silica glass jig used in process for manufacturing semiconductor and method of manufacturing silica glass jig | |
| JPS63237408A (en) | Substrate for semiconductor device | |
| TWI343099B (en) | Degating device and cover structure thereof and degating method using the same | |
| JP2004025820A (en) | Finger joint method |