JP2001227985A - Magnetic head - Google Patents

Magnetic head

Info

Publication number
JP2001227985A
JP2001227985A JP2000045072A JP2000045072A JP2001227985A JP 2001227985 A JP2001227985 A JP 2001227985A JP 2000045072 A JP2000045072 A JP 2000045072A JP 2000045072 A JP2000045072 A JP 2000045072A JP 2001227985 A JP2001227985 A JP 2001227985A
Authority
JP
Japan
Prior art keywords
permanent magnet
magnetic head
semiconductor magnetoresistive
semiconductor
mounting surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000045072A
Other languages
Japanese (ja)
Inventor
Takeshi Nakahara
剛 中原
Junichi Ando
純一 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP2000045072A priority Critical patent/JP2001227985A/en
Publication of JP2001227985A publication Critical patent/JP2001227985A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic head allowing suppression of variation in surface magnetic flux density in the magnetic head. SOLUTION: In this magnetic head, plural semiconductor magnetoresistive elements 8 each formed with semiconductor magnetoresistive films 12 on a semiconductor substrate 11 are disposed on a mounting face 6a formed in a permanent magnet 6. The semiconductor magnetoresistive element 8 is disposed on the mounting face 6a of the permanent magnet 6 such that the mounting face 6a of the permanent magnet 6 faces a non-formation surface of the semiconductor magnetoresistive films 12, while a ferromagnetic substance 16 is disposed between the non-formation surfaces of the semiconductor substrates 11 and the mounting face 6a.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体磁気抵抗素
子を用いて被検出体の回転や移動を検出する磁気ヘッド
に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a magnetic head for detecting rotation and movement of an object using a semiconductor magnetoresistive element.

【0002】[0002]

【従来の技術】例えば、物体の回転や位置の変位を検出
するものとして磁気変換作用を用いる半導体磁気抵抗素
子が使用されている。前記半導体磁気抵抗素子は、検出
出力の大きいインジユウムアンチモン(InSb)を半導体
磁気抵抗膜としたものが多く用いられ、磁性体材料から
なる被検出体、例えば歯車の回転を検出する回転検出装
置の磁気ヘッドに採用されている。
2. Description of the Related Art For example, a semiconductor magnetoresistive element using a magnetic conversion function has been used for detecting rotation and displacement of an object. As the semiconductor magnetoresistive element, those using indium antimony (InSb) having a large detection output as a semiconductor magnetoresistive film are often used, and an object to be detected made of a magnetic material, for example, a rotation detecting device for detecting rotation of a gear. Used in magnetic heads.

【0003】この磁気ヘッドは、永久磁石上に、シリコ
ン等の高抵抗材料からなる半導体基板に前記半導体磁気
抵抗膜を形成してなる第1,第2の半導体磁気抵抗素子
を熱硬化性接着剤を介して配設することで構成される。
前記磁気ヘッドは、前記第1,第2の半導体磁気抵抗素
子を直列に接続するとともに、各半導体磁気抵抗素子の
中点を取り出し、この中点電位を検出することによっ
て、被検出体の回転や移動を検出するものである。
In this magnetic head, first and second semiconductor magnetoresistive elements each having a semiconductor substrate made of a high-resistance material such as silicon on a permanent magnet are formed on a thermosetting adhesive. It is configured by arranging through.
The magnetic head connects the first and second semiconductor magnetoresistive elements in series, takes out the midpoint of each semiconductor magnetoresistive element, and detects the midpoint potential to rotate the object to be detected. This is to detect movement.

【0004】[0004]

【発明が解決しようとする課題】かかる磁気ヘッドは、
前記永久磁石における前記各半導体磁気抵抗素子を配設
する載置面が必ずしも平坦でないことや前記永久磁石の
材質等によって、前記永久磁石の表面磁束密度にばらつ
きが生じる。従って、この表面磁束密度のばらつきが、
前記半導体磁気抵抗素子の素子特性のばらつき、即ち前
記中間電位のばらつきとなって生じ、この中間電位のば
らつきを、例えばトリミング抵抗の調整抵抗で補正を行
うものの、その製造工程は繁雑である。
Such a magnetic head is,
The surface magnetic flux density of the permanent magnet varies depending on whether the mounting surface of the permanent magnet on which the semiconductor magnetoresistive elements are arranged is not necessarily flat or the material of the permanent magnet. Therefore, this variation in surface magnetic flux density
Variations in element characteristics of the semiconductor magnetoresistive element, that is, variations in the intermediate potential, occur. The variation in the intermediate potential is corrected by, for example, an adjustment resistor of a trimming resistor, but the manufacturing process is complicated.

【0005】そこで、本願発明は前述した問題点に着目
し、磁気ヘッドにおける表面磁束密度のばらつきを抑制
することが可能な磁気ヘッドを提供するものである。
Accordingly, the present invention is directed to a magnetic head capable of suppressing variations in surface magnetic flux density in a magnetic head, focusing on the above-described problems.

【0006】[0006]

【課題を解決するための手段】本発明は、前記課題を解
決するため、基板上に半導体磁気抵抗膜が形成された半
導体磁気抵抗素子を永久磁石に設けられた載置面に複数
配設する磁気ヘッドであって、前記半導体基板における
前記半導体磁気抵抗膜の非形成面と、前記永久磁石の前
記載置面とが対向するように前記載置面上に前記半導体
磁気抵抗素子を配設するとともに、前記半導体基板の前
記非形成面と前記載置面との間に強磁性体を配設してな
るものである。
According to the present invention, a plurality of semiconductor magnetoresistive elements each having a semiconductor magnetoresistive film formed on a substrate are arranged on a mounting surface provided on a permanent magnet. A magnetic head, wherein the semiconductor magnetoresistive element is disposed on the mounting surface of the semiconductor substrate such that a surface on which the semiconductor magnetoresistive film is not formed and a mounting surface of the permanent magnet face each other. In addition, a ferromagnetic material is provided between the non-formation surface of the semiconductor substrate and the mounting surface.

【0007】また、前記強磁性体は、前記永久磁石の前
記載置面より小さく、かつ前記載置面の略中央に配設さ
れてなるものである。
The ferromagnetic material is smaller than the mounting surface of the permanent magnet and is disposed substantially at the center of the mounting surface.

【0008】[0008]

【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づき説明するが、車両等に搭載される回転検出
装置の磁気ヘッドを例に挙げ説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

【0009】回転検出装置Aは、例えば図1に示すよう
に、ケース体1と、磁気ヘッド2と、硬質回路基板3
と、電気コード4とから構成されている。
As shown in FIG. 1, for example, a rotation detecting device A includes a case 1, a magnetic head 2, and a hard circuit board 3.
And an electric cord 4.

【0010】ケース体1は、PBT(ポリブチレンテレ
フタレート)やPPS(ポリフェニレンサルファイド)
等の樹脂材料からなり、車両における被検出体となるミ
ッションギア等の歯車5の凹凸を検出するための検出面
(底部)1aを有する筒状形状から構成され、回転検出
装置Aを構成する各部を収納する。
The case 1 is made of PBT (polybutylene terephthalate) or PPS (polyphenylene sulfide).
Of the rotation detecting device A, which has a detection surface (bottom) 1a for detecting unevenness of a gear 5 such as a transmission gear serving as an object to be detected in the vehicle. To store.

【0011】磁気ヘッド2は、永久磁石6と、磁石ホル
ダー7と、半導体磁気抵抗素子8と、フレキシブル回路
基板9と、後述する強磁性体とから構成されている。
The magnetic head 2 includes a permanent magnet 6, a magnet holder 7, a semiconductor magnetoresistive element 8, a flexible circuit board 9, and a ferromagnetic material to be described later.

【0012】磁気ヘッド2は、樹脂材料から構成される
磁石ホルダー7が有する凹部7aに、円柱状の永久磁石
6の一部分が突出する状態にて永久磁石6を配設し、突
出した永久磁石6上の平坦部となる載置面6aに、強磁
性体(後述する)と半導体磁気抵抗素子8とを順次配置
し、この半導体磁気抵抗素子8の磁気検出面8aに形成
される後述する素子電極とフレキシブル回路基板9とを
電気的に接合することによって構成される。
The magnetic head 2 has a permanent magnet 6 disposed in a recess 7a of a magnet holder 7 made of a resin material in a state in which a part of the cylindrical permanent magnet 6 projects. A ferromagnetic material (to be described later) and a semiconductor magnetoresistive element 8 are sequentially arranged on a mounting surface 6a serving as an upper flat portion, and an element electrode to be described later formed on a magnetic detection surface 8a of the semiconductor magnetoresistive element 8 And the flexible circuit board 9 are electrically connected.

【0013】硬質回路基板3は、ガラス繊維入り樹脂等
の硬質材料から構成される。硬質回路基板3は、表裏面
に所定の配線パターンを有し、この配線パターンの所定
位置に設けられる各ランドに、半導体磁気抵抗膜8から
の出力を増幅したり、あるいは外来ノイズを吸収するた
めの複数の電子部品10が実装されるとともに、フレキ
シブル回路基板9が接続固定される。また、硬質回路基
板3の歯車5側には、磁石ホルダー7が配設されるもの
であるが、磁石ホルダー7は、半導体磁気抵抗膜8の磁
気検出面8aがケース体1の検出面1aに沿うように硬
質回路基板3に配設される。
The hard circuit board 3 is made of a hard material such as a resin containing glass fiber. The hard circuit board 3 has a predetermined wiring pattern on the front and back surfaces, and a land provided at a predetermined position of the wiring pattern is used to amplify the output from the semiconductor magnetoresistive film 8 or absorb external noise. Are mounted, and the flexible circuit board 9 is connected and fixed. A magnet holder 7 is disposed on the gear 5 side of the hard circuit board 3. The magnet holder 7 is configured such that the magnetic detection surface 8 a of the semiconductor magnetoresistive film 8 is on the detection surface 1 a of the case body 1. It is arranged on the rigid circuit board 3 so as to follow.

【0014】電気コード4は、半導体磁気抵抗素子8に
電源を供給したり、半導体磁気抵抗素子8からの出力信
号を外部に出力するためのものである。
The electric cord 4 is for supplying power to the semiconductor magnetoresistive element 8 and for outputting an output signal from the semiconductor magnetoresistive element 8 to the outside.

【0015】次に、図2及び図3を用いて、磁気ヘッド
2について詳述する。
Next, the magnetic head 2 will be described in detail with reference to FIGS.

【0016】磁気ヘッド2は、長方形形状の第1,第2
の半導体磁気抵抗素子8a,8b(8)を備えている。
The magnetic head 2 has first and second rectangular shapes.
Semiconductor magnetoresistive elements 8a and 8b (8).

【0017】各半導体磁気抵抗素子8a,8bは、高抵
抗材料からなる半導体基板(例えば、シリコン(Si))
11の表面側に、インジウム(In)とアンチモン(Sb)
とを含む半導体磁気抵抗膜12を所定形状にて形成し、
半導体磁気抵抗膜12上に、例えばクロム(Cr)や銅
(Cu)の二層構造からなる金属薄膜により、電気信号の
取り出し用の素子電極(外部に引き出すための引き出し
電極)13及び抵抗値調整用の短絡電極14を形成し、
素子電極13の一部分が外部に露出するように半導体基
板11上をポリイミド等の絶縁材料からなる保護膜15
に覆われている。尚、各半導体磁気抵抗素子8a,8b
は、素子電極13が半導体基板11の1辺にそれぞれ引
き出し形成された2端子構造である。
Each semiconductor magnetoresistive element 8a, 8b is a semiconductor substrate (for example, silicon (Si)) made of a high-resistance material.
11 on the surface side, indium (In) and antimony (Sb)
Is formed in a predetermined shape including
On the semiconductor magnetoresistive film 12, for example, a metal thin film having a two-layer structure of chromium (Cr) or copper (Cu) is used to form an element electrode (extraction electrode for extracting to the outside) 13 for extracting an electric signal and a resistance value adjustment. Forming a short-circuit electrode 14 for
A protective film 15 made of an insulating material such as polyimide is formed on the semiconductor substrate 11 so that a part of the device electrode 13 is exposed to the outside.
Covered in. Incidentally, each semiconductor magnetoresistive element 8a, 8b
Has a two-terminal structure in which the device electrodes 13 are formed on one side of the semiconductor substrate 11 respectively.

【0018】磁気ヘッド2は、永久磁石6の載置面6a
と、各半導体磁気抵抗素子8a,8bにおける各半導体
基板(半導体基板11における半導体磁気抵抗膜12の
非形成面側)11との間に、鉄(Fe)やニッケル(Ni)
等からなる円状形状の強磁性体16を配設している。
The magnetic head 2 has a mounting surface 6a on which the permanent magnet 6 is mounted.
Iron (Fe) or nickel (Ni) between the semiconductor substrate 11 (the side of the semiconductor substrate 11 where the semiconductor magnetoresistive film 12 is not formed) of the semiconductor magnetoresistive elements 8a and 8b.
A ferromagnetic body 16 having a circular shape is formed.

【0019】強磁性体16は、強磁性体16の周縁が永
久磁石6の載置面6aの周縁に対し内側に位置する載置
面6aより小さい板状部材であり、載置面6aの略中央
に配設されるものである。
The ferromagnetic body 16 is a plate-like member in which the periphery of the ferromagnetic body 16 is smaller than the mounting surface 6a located inside the circumference of the mounting surface 6a of the permanent magnet 6, and is substantially the same as the mounting surface 6a. It is arranged in the center.

【0020】かかる磁気ヘッド2は、各半導体磁気抵抗
素子8a,8bにおける素子電極13にフレキシブル回
路基板9を電気的に固定し、各半導体磁気抵抗素子8
a,8b及び強磁性体16と、強磁性体16及び永久磁
石6とをそれぞれ熱硬化性接着剤を介して接着固定する
とともに、永久磁石6を磁石ホルダー7に配設すること
で構成される。
In the magnetic head 2, the flexible circuit board 9 is electrically fixed to the element electrodes 13 of the semiconductor magnetoresistive elements 8a and 8b.
a, 8b and the ferromagnetic material 16 and the ferromagnetic material 16 and the permanent magnet 6 are bonded and fixed via a thermosetting adhesive, respectively, and the permanent magnet 6 is disposed in the magnet holder 7. .

【0021】また、磁気ヘッド2は、2端子構造である
各半導体磁気抵抗素子8a,8bの内側に位置する各素
子電極13をフレキシブル回路基板9を介して接続する
ことで、各半導体磁気抵抗素子8a,8bが直列に接続
され、外側に位置する各素子電極13に所定の駆動電圧
Vinを印加し、歯車5の回転によるバイアス磁界の変化
に伴う各半導体磁気抵抗素子8a,8bの抵抗値変化を
中間電位Voutとして取り出すことによって、歯車6の
回転を検出するものである。
The magnetic head 2 has a two-terminal structure in which each element electrode 13 located inside each of the semiconductor magnetoresistive elements 8a and 8b is connected via a flexible circuit board 9, so that each semiconductor magnetoresistive element 8a and 8b are connected in series, a predetermined drive voltage Vin is applied to each element electrode 13 located outside, and the resistance value change of each semiconductor magnetoresistive element 8a and 8b accompanying the change of the bias magnetic field due to the rotation of the gear 5 Is taken out as an intermediate potential Vout to detect the rotation of the gear 6.

【0022】かかる磁気ヘッド2において特徴となる点
は、各半導体磁気抵抗素子8a,8bと永久磁石6との
間に強磁性体16を配設することにある。
A feature of the magnetic head 2 is that a ferromagnetic material 16 is provided between each of the semiconductor magnetoresistive elements 8a and 8b and the permanent magnet 6.

【0023】従って磁気ヘッド2は、永久磁石6におけ
る半導体基板1を配設する載置面6aが平坦でない場合
や永久磁石6の材質等によって、永久磁石6の表面磁束
密度にばらつきが生じる場合であっても表面磁束密度の
ばらつきを平均化することが可能となるため、各半導体
磁気抵抗素子8a,8bの出力となる中間電位Voutの
ばらつきを抑制することができ、製造工程において煩わ
しい中間電位Voutの調整工程(トリミング抵抗による
調整)を簡素化することが可能となる。また、中間電位
Voutの調整工程の簡素化に伴い、中間電位Voutの調整
精度を向上させることができ、正確な回転検出が得られ
る回転検出装置Aを提供できる。
Therefore, the magnetic head 2 is used when the mounting surface 6a of the permanent magnet 6 on which the semiconductor substrate 1 is disposed is not flat or when the surface magnetic flux density of the permanent magnet 6 varies due to the material of the permanent magnet 6. Even if there is, the variation of the surface magnetic flux density can be averaged, so that the variation of the intermediate potential Vout which is the output of each of the semiconductor magnetoresistive elements 8a and 8b can be suppressed, and the intermediate potential Vout which is troublesome in the manufacturing process. (Adjustment by trimming resistance) can be simplified. In addition, with the simplification of the adjustment process of the intermediate potential Vout, the adjustment accuracy of the intermediate potential Vout can be improved, and the rotation detection device A that can accurately detect rotation can be provided.

【0024】また、磁気ヘッド2は、永久磁石6におい
て、周縁部分が表面磁束密度が小さく、中心部分が表面
磁束密度が大きいことに着目し、強磁性体16が永久磁
石6の載置面6aより小さく、かつ載置面6aの略中央
に配設することから、表面磁束密度の平均値を向上させ
ることができ、よって中間電位Voutを良好に得ること
が可能となる。
The magnetic head 2 focuses on the fact that the surface magnetic flux density is small at the peripheral portion and the surface magnetic flux density is large at the center of the permanent magnet 6, and the ferromagnetic material 16 is attached to the mounting surface 6a of the permanent magnet 6 on the permanent magnet 6. Since it is smaller and is disposed substantially at the center of the mounting surface 6a, the average value of the surface magnetic flux density can be improved, so that the intermediate potential Vout can be favorably obtained.

【0025】尚、本発明の実施の形態では、強磁性体1
6として、永久磁石6の載置面6aより小さいものを用
いているが、本発明にあっては、強磁性体16と永久磁
石6径とを略同等の形状にしても表面磁束密度の平均化
が可能であり、中間電位のばらつきを抑制することがで
きる。
In the embodiment of the present invention, the ferromagnetic material 1
Although the magnet 6 is smaller than the mounting surface 6a of the permanent magnet 6, in the present invention, even if the ferromagnetic material 16 and the permanent magnet 6 have substantially the same diameter, the average of the surface magnetic flux density is obtained. And the variation of the intermediate potential can be suppressed.

【0026】また、本発明の実施の形態では、強磁性体
16を円状形状から構成したが、例えば四角形状であっ
ても良く、本発明における強磁性体の形状は任意に変更
可能である。
Further, in the embodiment of the present invention, the ferromagnetic body 16 is formed in a circular shape, but may be, for example, a square shape, and the shape of the ferromagnetic body in the present invention can be arbitrarily changed. .

【0027】[0027]

【発明の効果】本発明は、基板上に半導体磁気抵抗膜が
形成された半導体磁気抵抗素子を永久磁石に設けられた
載置面に複数配設する磁気ヘッドであって、前記半導体
基板における前記半導体磁気抵抗膜の非形成面と、前記
永久磁石の前記載置面とが対向するように前記載置面上
に前記半導体磁気抵抗素子を配設するとともに、前記半
導体基板の前記非形成面と前記載置面との間に強磁性体
を配設してなるものであり、前記永久磁石における前記
半導体基板を配設するための載置面が平坦でない場合や
前記永久磁石の材質等によって、前記永久磁石における
表面磁束密度にばらつきが生じる場合であっても前記表
面磁束密度のばらつきを平均化することが可能となるた
め、前記半導体磁気抵抗素子の出力となる中間電位のば
らつきを抑制することができ、製造工程において煩わし
いの前記中間電位の調整工程を簡素化することが可能と
なる。
According to the present invention, there is provided a magnetic head in which a plurality of semiconductor magnetoresistive elements each having a semiconductor magnetoresistive film formed on a substrate are arranged on a mounting surface provided on a permanent magnet. The non-formation surface of the semiconductor magnetoresistive film and the semiconductor magnetoresistive element are arranged on the placement surface so that the placement surface of the permanent magnet faces the placement surface, and the non-formation surface of the semiconductor substrate. A ferromagnetic material is disposed between the mounting surface and the mounting surface, and a mounting surface for mounting the semiconductor substrate in the permanent magnet is not flat or a material of the permanent magnet, and the like. Even if the surface magnetic flux density of the permanent magnet varies, the variation of the surface magnetic flux density can be averaged, so that the variation of the intermediate potential which is the output of the semiconductor magnetoresistive element is suppressed. Bets can be, it is possible to simplify the adjustment process of bothersome of the intermediate potential in the manufacturing process.

【0028】また、前記強磁性体は、前記永久磁石の前
記載置面より小さく、かつ前記載置面の略中央に配設さ
れてなるものであり、前記表面磁束密度の平均値を向上
させることができ、よって前記中間電位を良好に得るこ
とが可能となる。
Further, the ferromagnetic material is smaller than the mounting surface of the permanent magnet and is disposed substantially at the center of the mounting surface, and improves the average value of the surface magnetic flux density. Therefore, the intermediate potential can be obtained favorably.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態の回転検出装置を示す要部
断面図。
FIG. 1 is an essential part cross-sectional view showing a rotation detection device according to an embodiment of the present invention.

【図2】同上実施の形態の磁気ヘッドを示す要部断面
図。
FIG. 2 is an essential part cross sectional view showing the magnetic head of the embodiment;

【図3】同上実施の形態の磁気ヘッドを示す平面図。FIG. 3 is a plan view showing the magnetic head of the embodiment.

【符号の説明】[Explanation of symbols]

2 磁気ヘッド 6 永久磁石 6a 載置面 7 磁石ホルダー 7a 凹部 8 半導体磁気抵抗素子 8a 第1の半導体磁気抵抗素子 8b 第2の半導体磁気抵抗素子 9 フレキシブル回路基板 11 半導体基板 16 強磁性体 Reference Signs List 2 magnetic head 6 permanent magnet 6a mounting surface 7 magnet holder 7a recess 8 semiconductor magnetoresistive element 8a first semiconductor magnetoresistive element 8b second semiconductor magnetoresistive element 9 flexible circuit board 11 semiconductor substrate 16 ferromagnetic material

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板上に半導体磁気抵抗膜が形成された
半導体磁気抵抗素子を永久磁石に設けられた載置面に複
数配設する磁気ヘッドであって、 前記半導体基板における前記半導体磁気抵抗膜の非形成
面と、前記永久磁石の前記載置面とが対向するように前
記載置面上に前記半導体磁気抵抗素子を配設するととも
に、前記半導体基板の前記非形成面と前記載置面との間
に強磁性体を配設してなることを特徴とする磁気ヘッ
ド。
1. A magnetic head in which a plurality of semiconductor magnetoresistive elements each having a semiconductor magnetoresistive film formed on a substrate are disposed on a mounting surface provided on a permanent magnet, wherein the semiconductor magnetoresistive film on the semiconductor substrate is provided. The semiconductor magnetoresistive element is arranged on the mounting surface such that the non-forming surface of the permanent magnet faces the mounting surface of the permanent magnet, and the non-forming surface and the mounting surface of the semiconductor substrate are arranged on the mounting surface. Wherein a ferromagnetic material is disposed between the magnetic head and the magnetic head.
【請求項2】 前記強磁性体は、前記永久磁石の前記載
置面より小さく、かつ前記載置面の略中央に配設されて
なることを特徴とする請求項1に記載の磁気ヘッド。
2. The magnetic head according to claim 1, wherein the ferromagnetic material is smaller than the mounting surface of the permanent magnet, and is disposed substantially at the center of the mounting surface.
JP2000045072A 2000-02-17 2000-02-17 Magnetic head Pending JP2001227985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000045072A JP2001227985A (en) 2000-02-17 2000-02-17 Magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000045072A JP2001227985A (en) 2000-02-17 2000-02-17 Magnetic head

Publications (1)

Publication Number Publication Date
JP2001227985A true JP2001227985A (en) 2001-08-24

Family

ID=18567723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000045072A Pending JP2001227985A (en) 2000-02-17 2000-02-17 Magnetic head

Country Status (1)

Country Link
JP (1) JP2001227985A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003065797A (en) * 2001-08-28 2003-03-05 Nec Tokin Corp Rotation sensor
JP2013036862A (en) * 2011-08-09 2013-02-21 Alps Electric Co Ltd Magnetic detector and manufacturing method therefor
WO2016056179A1 (en) * 2014-10-09 2016-04-14 パナソニックIpマネジメント株式会社 Magnetic sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003065797A (en) * 2001-08-28 2003-03-05 Nec Tokin Corp Rotation sensor
JP2013036862A (en) * 2011-08-09 2013-02-21 Alps Electric Co Ltd Magnetic detector and manufacturing method therefor
WO2016056179A1 (en) * 2014-10-09 2016-04-14 パナソニックIpマネジメント株式会社 Magnetic sensor
US10094890B2 (en) 2014-10-09 2018-10-09 Panasonic Intellectual Property Management Co., Ltd. Magnetic sensor

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