JP2001223188A - Graphite-slicing stand for cutting semiconductor ingot - Google Patents

Graphite-slicing stand for cutting semiconductor ingot

Info

Publication number
JP2001223188A
JP2001223188A JP2000032350A JP2000032350A JP2001223188A JP 2001223188 A JP2001223188 A JP 2001223188A JP 2000032350 A JP2000032350 A JP 2000032350A JP 2000032350 A JP2000032350 A JP 2000032350A JP 2001223188 A JP2001223188 A JP 2001223188A
Authority
JP
Japan
Prior art keywords
graphite
stand
semiconductor ingot
recessed surface
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000032350A
Other languages
Japanese (ja)
Inventor
Yasuhiko Saruwatari
恭彦 猿渡
Yoshikazu Tanaka
義和 田中
Hiromitsu Sakai
博光 酒井
Masasane Kume
将実 久米
Mitsunobu Sato
充信 佐藤
Toshio Shimada
俊雄 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Carbon Co Ltd
Original Assignee
Nippon Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Carbon Co Ltd filed Critical Nippon Carbon Co Ltd
Priority to JP2000032350A priority Critical patent/JP2001223188A/en
Publication of JP2001223188A publication Critical patent/JP2001223188A/en
Withdrawn legal-status Critical Current

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  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a graphite-slicing stand for cutting single crystals for positively insulating the graphite slice stand from fixing fitting in a wire saw device for cutting and machining a semiconductor ingot such as silicon into wafers. SOLUTION: One surface of a graphite slice stand is formed in a recessed surface, and the recessed surface is formed in a recessed surface that can stick to the side surface of the semiconductor ingot such as cylindrical silicon. The other surface that opposes the recessed surface is fixed while being in contact with the mounting fixing fitting of a wire saw device. In this case, an insulation resin sheet with woven cloth such as the plain weave of ceramic fiber such as glass fiber, the non-woven cloth of paper, felt, or the like, and short fiber as filling reinforcing materials is applied to a recessed surface for plating the semiconductor ingots or a plane at the side of the fixing fitting for fixing before insulation treatment in this graphite-slicing stand.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はシリコン等半導体インゴ
ットをウエハに切断加工するワイヤソ−装置において、
半導体インゴットを固定支持する絶縁処理した黒鉛スラ
イス台に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire saw for cutting a semiconductor ingot such as silicon into a wafer.
The present invention relates to an insulated graphite slicing table for fixedly supporting a semiconductor ingot.

【0002】[0002]

【従来の技術】シリコン等半導体インゴットをウエハに
切断加工する方法は、ド−ナツ状薄板の内周にダイヤモ
ンド等の砥粒をボンディングした内周刃砥石切断機によ
るもの、薄いリング状の帯鋼にダイヤモンド等の砥粒を
ボンディングしたもの、あるいは細いピアノ線を連続的
に移動させながら遊離砥粒によって切断するワイヤソ−
切断法がある。
2. Description of the Related Art A method of cutting a semiconductor ingot such as silicon into a wafer is performed by an inner peripheral blade grinding machine in which abrasive grains such as diamond are bonded to the inner periphery of a donut-shaped thin plate, and a thin ring-shaped steel strip. Or a wire source that cuts with a loose abrasive while continuously moving a thin piano wire.
There is a cutting method.

【0003】最近ではウエハ直径が大径化したことによ
り、製品歩留まりからワイヤソ−装置に移行している。
Recently, as the wafer diameter has increased, the product yield has shifted to a wire saw device.

【0004】ワイヤソ−装置は、切断工程中のワイヤ−
に電気を流し、切断状況が検知可能なとしたもの(特開
平8−112748)が開発された。
[0004] A wire saw device is used for cutting a wire during a cutting process.
(Japanese Patent Application Laid-Open No. HEI 8-112748) has been developed in which electric power is supplied to the power supply to detect the cutting state.

【0005】その装置において切断状態の検知には、被
加工物を支持する黒鉛スライス台に予め2種類の電極が
埋設され、黒鉛スライス台が固着されている固定金具を
通じて制御部と接続している。
To detect the cutting state in the apparatus, two types of electrodes are embedded in advance in a graphite slicing table that supports a workpiece, and the graphite slicing table is connected to a control unit through a fixture that is fixed to the graphite slicing table. .

【0006】具体的には、ワイヤ−が被加工物が接触す
るとワイヤ−から黒鉛スライス台に取付けた一方の電極
に流れる電流を検知する。
Specifically, when the wire contacts the workpiece, a current flowing from the wire to one electrode attached to the graphite slicing table is detected.

【0007】次に、被加工物の底面に接合されるように
黒鉛スライス台に取付けた表面を絶縁被覆したもう一方
の電極が、ワイヤ−が被加工物を切断し電極の表面の絶
縁被覆を破ったとき、切断終了の信号としてワイヤ−か
らの電流を検知する。
[0007] Next, the other electrode, which is insulated on the surface attached to the graphite slicing table so as to be joined to the bottom surface of the workpiece, is connected to a wire to cut the workpiece, and the insulating coating on the surface of the electrode is cut off. When the wire breaks, the current from the wire is detected as a signal indicating the end of the cutting.

【0008】このようにして、ワイヤ−に流れている電
流をそれぞれの電極が受電し、固定金具を通じて制御部
に接続信号の形で切断状態を識別している。
[0008] In this manner, each electrode receives the current flowing through the wire, and the disconnection state is identified in the form of a connection signal to the control unit through the fixture.

【0009】このために信号電流を漏電させないで誤動
作を防止するために、黒鉛スライス台と固定金具はガラ
ス板等の絶縁板を介装して絶縁をしている。
For this reason, in order to prevent erroneous operation without leaking the signal current, the graphite slicing table and the fixture are insulated by interposing an insulating plate such as a glass plate.

【0010】上記の方法の他に、ワイヤ−の断線の有無
を検知するために使うものがあり、ワイヤ−にかかる荷
重をテンションメ−タ−で検知していたものをワイヤ−
と黒鉛スライス台との間に電流を流し検知するものであ
る。
In addition to the above-mentioned method, there is a method for detecting the presence or absence of a break in a wire, and a method in which a load applied to the wire is detected by a tension meter.
A current is passed between the apparatus and the graphite slicing table for detection.

【0011】いずれにしても固定金具と黒鉛スライス台
との間にガラス板等の絶縁板を介装して絶縁を確保する
ことが必要である。その絶縁方法として、特開平9−3
00344,特開2000−6138が提案されてい
る。
In any case, it is necessary to secure insulation by interposing an insulating plate such as a glass plate between the fixture and the graphite slicing table. As the insulating method, Japanese Patent Application Laid-Open No. 9-3
[0034] Japanese Patent Application Laid-Open No. 2000-6138 has been proposed.

【0012】特開平9−300344は導電性の黒鉛ス
ライス台の代わりに、電気絶縁性のセラミックス系人造
木材とするもので、加工性、半導体への汚染等の問題が
なければ実現の可能性がある。
Japanese Patent Application Laid-Open No. 9-300344 discloses an electrically insulating ceramic artificial wood in place of a conductive graphite slice table, and it is feasible if there is no problem such as workability and contamination of semiconductors. is there.

【0013】特開2000−6138は黒鉛スライス台
の固定金具に当接する面に厚さ1〜100μmの絶縁性
高分子膜を塗布したもので、高分子膜の機械強度が不安
定でこの改善改良が課題となっていた。
Japanese Patent Application Laid-Open No. 2000-6138 discloses a method in which an insulating polymer film having a thickness of 1 to 100 μm is applied to a surface of a graphite slice table which is in contact with a fixing bracket. Was an issue.

【0014】[0014]

【発明が解決しようとする課題】本発明は、前記黒鉛ス
ライス台の問題点を鑑みてなされたものであり、シリコ
ン等半導体インゴットをウエハに切断加工するワイヤソ
−装置において、黒鉛スライス台と固定金具との絶縁を
確実に行うことが可能となる半導体単結晶切断用黒鉛ス
ライス台を提供する。
SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the graphite slicing table, and is directed to a wire saw apparatus for cutting a semiconductor ingot such as silicon into a wafer. Provided is a graphite slicing table for cutting a semiconductor single crystal, which can reliably insulate the semiconductor.

【0015】[0015]

【課題を解決するための手段】黒鉛スライス台の一面が
凹面に形成され、この凹面は円柱状のシリコン等半導体
インゴットの側面に固着可能な凹面に形成される。
One surface of a graphite slice table is formed as a concave surface, and the concave surface is formed as a concave surface that can be fixed to a side surface of a semiconductor ingot such as a cylindrical silicon.

【0016】この凹面と対向する他面が、ワイヤソ−装
置の取付け固定金具に接面し固定されるが、半導体イン
ゴット積載凹面又は固定金具側の平面に、ガラス繊維等
のセラミック繊維の平織等織布、ペ−パ−、フェルト等
の不織布、短繊維を充填補強材とした絶縁性樹脂シ−ト
を貼着固定し絶縁処理した黒鉛スライス台とする。
The other surface opposed to the concave surface is in contact with and fixed to the mounting fixture of the wire saw device. The concave surface of the semiconductor ingot loading or the flat surface of the fixture is provided with a plain weave of ceramic fiber such as glass fiber. A non-woven fabric such as cloth, paper, felt, or the like, and an insulating resin sheet using short fibers as a filling reinforcing material are adhered and fixed, and a graphite slice table is insulated.

【0017】[0017]

【発明の実施の形態】黒鉛スライス台は黒鉛基材と貼着
固定した樹脂シ−トからなる。樹脂シ−トは充填補強材
のない樹脂単味のものは寸法安定性が劣り、皺を生じて
しまうので、ガラスクロスにエポキシ樹脂含浸したプリ
プレグシ−トを用いた。黒鉛基材は加工性がよいもので
あれば特に限定されない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A graphite slice table is made of a resin sheet adhered and fixed to a graphite base. Since a resin sheet having no filler and having no filler is poor in dimensional stability and wrinkles, a prepreg sheet in which glass cloth is impregnated with an epoxy resin is used. The graphite substrate is not particularly limited as long as it has good workability.

【0018】以下に好適な一実施形態を説明する。黒鉛
スライス台に形状加工した黒鉛基材をメタノ−ル洗浄
し、樹脂シ−ト接着面にエポキシ系接着剤を塗布し、樹
脂シ−トを貼付、貼付面のエア−抜きをのためにロ−ラ
−掛けし、150℃で2時間加熱硬化させる。放置冷却
後バリ取りする。
A preferred embodiment will be described below. The graphite substrate shaped into a graphite slice table is washed with methanol, an epoxy-based adhesive is applied to the resin sheet bonding surface, the resin sheet is bonded, and air is removed from the bonding surface. And heat-curing at 150 ° C. for 2 hours. Deburring after cooling.

【0019】[0019]

【発明の効果】本発明は以上のように構成されており、
黒鉛スライス台とワイヤソ−装置間で絶縁が安定して得
られ装置の誤動作を防止できる。
The present invention is configured as described above.
Insulation can be stably obtained between the graphite slicing table and the wire saw device, and malfunction of the device can be prevented.

フロントページの続き (72)発明者 佐藤 充信 埼玉県草加市中根町50 ロイヤルアメニテ イ209 (72)発明者 島田 俊雄 山形県尾花沢市新町1−13−23 Fターム(参考) 3C069 AA01 BA06 CA04 CB01 DA01 DA03 EA02 Continued on the front page (72) Inventor Mitsunobu Sato 50 Royal Amenity 209, Nakane-cho, Soka City, Saitama Prefecture (72) Inventor Toshio Shimada 1-13-23 Shinmachi, Obanazawa-shi, Yamagata F-term (reference) 3C069 AA01 BA06 CA04 CB01 DA01 DA03 EA02

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体インゴット切断に供するワイヤソ−
装置において、半導体インゴットを載せて支持する黒鉛
スライス台の積載面又は固定金具側の平面に、ガラス繊
維等のセラミック繊維のクロス等織布、ペ−パ−、フェ
ルト等の不織布、短繊維を充填材とした絶縁性樹脂シ−
トを貼着固定したことを特徴とする黒鉛スライス台。
1. A wire source for cutting a semiconductor ingot.
In the apparatus, the loading surface of the graphite slicing table on which the semiconductor ingot is placed and supported or the flat surface on the fixture side is filled with a woven fabric such as a cloth of ceramic fiber such as glass fiber, a non-woven fabric such as paper or felt, or a short fiber. Insulating resin screen
A graphite slice table, which has been fixed by sticking.
JP2000032350A 2000-02-09 2000-02-09 Graphite-slicing stand for cutting semiconductor ingot Withdrawn JP2001223188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000032350A JP2001223188A (en) 2000-02-09 2000-02-09 Graphite-slicing stand for cutting semiconductor ingot

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000032350A JP2001223188A (en) 2000-02-09 2000-02-09 Graphite-slicing stand for cutting semiconductor ingot

Publications (1)

Publication Number Publication Date
JP2001223188A true JP2001223188A (en) 2001-08-17

Family

ID=18556965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000032350A Withdrawn JP2001223188A (en) 2000-02-09 2000-02-09 Graphite-slicing stand for cutting semiconductor ingot

Country Status (1)

Country Link
JP (1) JP2001223188A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010133683A1 (en) * 2009-05-22 2010-11-25 Gebr. Schmid Gmbh & Co. Carrier for a silicon block and method for producing such a carrier and arrangement
CN114474413A (en) * 2021-12-24 2022-05-13 广东兴发铝业(江西)有限公司 Preparation method of graphite electrode for processing porous extrusion die

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010133683A1 (en) * 2009-05-22 2010-11-25 Gebr. Schmid Gmbh & Co. Carrier for a silicon block and method for producing such a carrier and arrangement
CN114474413A (en) * 2021-12-24 2022-05-13 广东兴发铝业(江西)有限公司 Preparation method of graphite electrode for processing porous extrusion die

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20070501