JP2001215531A - Liquid crystal device, projection type display device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device and a projection type display device, capable of performing the display of high contrast so as not to generate the display deficiency caused by the disclination to a projection type liquid crystal panel having high definition. SOLUTION: The device has a configuration where the liquid crystal 50 is held between a first substrate 10 and a second substrate 20, on the first substrate, a plurality of pixel electrodes 9a disposed in the shape of matrix and a plurality of switching elements which respectively drive the pixel electrodes are provided, micro lenses 500 are provided, in correspondence with each pixel electrode on the second substrate, and the micro lens makes the luminous flux which makes itself pass through to reach the pixel electrode converge within the pixel electrode peripheral edge. When the pitch of the pixel electrodes disposed in the shape of matrix is set to P, the distance between the pixel electrodes is set to 1, and the thickness of the liquid crystal between the first substrate and the second substrate is set to d, relations P<=30×10-6 m and l/d>=1 are satisfied.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal device in which the arrangement pitch and interval of pixels and the thickness of a liquid crystal layer are specified in a specific relationship, and a projection display device and electronic equipment using the same. The present invention relates to a technique which can be suitably used and does not cause display defects caused by disclination lines in a display area.

[0002]

2. Description of the Related Art Conventionally, demand for a liquid crystal display device has been increasing not only as a direct-viewing type but also as a projection type display element such as a projection television. When this liquid crystal display device is used as a projection type, if the enlargement ratio is increased with the conventional number of pixels, the roughness of the screen becomes conspicuous. Therefore, in order to obtain a fine image even at a high magnification, it is necessary to increase the number of pixels. However, when the number of pixels of the liquid crystal display device is increased, especially in an active matrix type liquid crystal display device,
The area occupied by portions other than the pixels, for example, the wiring portion and the thin film transistor portion is relatively large, and the area of the black matrix that covers these portions is increased. In addition, there is a problem that the aperture ratio of the display device is reduced. When the aperture ratio decreases, the screen becomes darker, and the image quality as a liquid crystal display device deteriorates. Therefore, in order to prevent a decrease in the aperture ratio due to an increase in the number of pixels as much as possible, a projection type display device having a structure in which a reflection type liquid crystal display device is used and a microlens is provided on one substrate side of the liquid crystal panel. Have been proposed (JP-A-60-165621 to JP-A-60-165624, JP-A-60-26).
In some projection display devices, a transition from a transmissive liquid crystal panel to a reflective liquid crystal panel is being made.

The technology described in these patent publications makes it possible to form a wiring portion such as a scanning line or a signal line below a reflective electrode by making a liquid crystal panel of a reflective type, thereby reducing the aperture ratio of a pixel. It depends on what can be improved.
In addition, by providing a plurality of microlenses corresponding to each pixel, it is possible to condense the light that has been shielded by the black matrix in the transmission type structure into the pixels. The feature is that the effective aperture ratio can be improved and a bright display screen can be obtained. Note that, for simplification of description, an aperture ratio excluding a color filter and a polarizing plate normally provided in a liquid crystal display device is expressed as an effective aperture ratio.

[0004]

However, even with the emergence of various types of projection display devices, when a high-resolution liquid crystal panel is used, the distance between pixels, that is, the distance between the pixel electrodes and the pixel electrodes is reduced. Because the distance of becomes small,
Liquid crystal disclination (tilting) occurs due to the influence of a lateral electric field received from the periphery of another adjacent pixel electrode,
There is a problem that a defect occurs in the display area. The defect in the display area will be described in detail below.

In a current liquid crystal panel for a projector having a high-definition structure, the width of a rectangular pixel electrode is reduced to about 20 × 10 ⁻⁶ m (20 μm) square, and such a pixel area is formed in a display area. A plurality of pixel electrodes are arranged in a matrix. In such a high-definition liquid crystal panel, which adopts a reflection type structure, a switching element formed on a substrate is covered with an insulating film, and a pixel electrode is arranged without a gap. By adopting it, the distance between the pixel electrodes can be reduced to about 1 × 10 ⁻⁶ m (1 μm).

In a high-definition liquid crystal panel having a structure in which the distance between the pixel electrodes is narrowed, the pixel electrodes 100 provided on one of the element substrates as shown in FIG.
The distance l between the electrodes 101 is about 1 × 10 ⁻⁶ m, and the common electrode 102 and the pixel electrodes 100, 1
Since the distance from the pixel electrode 02 is 2 to 4 × 10 ⁻⁶ m, a strong horizontal electric field acts on the liquid crystal present at the boundary between the adjacent pixel electrodes 100 and 101. Here, for example,
The common electrode 102 is grounded and fixed at 0 V, and the pixel electrode 1
When +5 V is applied to 00 and −5 V is applied to the pixel electrode 101 to control the alignment of the liquid crystal, when a liquid crystal that rises with respect to the substrate by applying a voltage is used, FIG.
In the liquid crystal in the region corresponding to the pixel electrode 100 shown in FIG.
Since a horizontal electric field of 10 V, which is a potential difference of V, is generated, the liquid crystal affected by the horizontal electric field is likely to be oriented in a different direction. That is, in the liquid crystal in the region where the alignment is to be controlled by the pixel electrode 100, a part of the liquid crystal is directed in a slightly different direction from the other liquid crystal. There is a problem that a linear display defect called a disclination line is generated in a region along a boundary line indicated by DR). Also,
When the width of this linear display defect was actually measured with this type of liquid crystal display device, it was 3 × 10 ⁻⁶ m (μm) on average.
It turned out to be of the order of magnitude.

For the purpose of eliminating such display defects as much as possible, a frame inversion driving method capable of making the polarities of adjacent pixel electrodes as identical as possible is adopted, and the same polarity is applied to each frame during display. Is applied to all the pixel electrodes to drive the liquid crystal. However, the above-described problem cannot be completely solved by the frame inversion driving method. That is, in the case of switching between white display and black display on the entire display area, frame inversion driving is effective, but in a display mode in which white display and black display are mixed in the display area. There is a problem that the boundary between the white display and the black display becomes a display close to the gray display, and the display of the boundary is blurred.

For example, as shown in FIG. 14, when an attempt is made to display the character A in black display on a white display screen, a disclination line is formed in a white display portion around the outline of the entire periphery of black display A. It is conceivable that a gray display area is generated due to the above, and there is a possibility that the outline of the character A is blurred and the display form becomes low in contrast. In this case, this display state is enlarged and projected by the liquid crystal projector. When displayed, there is a problem that a region with an unclear outline is enlarged and displayed.

On the other hand, in addition to the frame inversion driving method, the liquid crystal driving method includes a line inversion driving method in which the polarity of the driving voltage is switched every vertical line or every horizontal line, and a method for each adjacent pixel electrode. There are known dot inversion driving methods for switching the polarity of the driving voltage, and each driving method has advantages. Therefore, it is desirable to be able to select various driving methods in a liquid crystal panel for a projector. Due to the problem of generation, there is a problem that a line inversion driving method or a dot inversion driving method in which a potential difference between adjacent pixel electrodes is increased cannot be selected as a driving method of a high-definition liquid crystal panel.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has been developed for a high-definition liquid crystal display device having a fine pixel pitch and a pixel electrode. It is an object of the present invention to provide a liquid crystal device, a projection display device, and an electronic device that enable high-contrast display by preventing a display defect due to disclination by setting the thickness to an appropriate range.

[0011]

According to a first aspect of the present invention, there is provided a reflective liquid crystal display device comprising a pair of first and second substrates, wherein a liquid crystal is sandwiched between the first and second substrates. A plurality of pixel electrodes arranged in a matrix and a plurality of switching elements for driving each of the plurality of pixel electrodes are provided, and a microlens is provided on the second substrate corresponding to each pixel electrode, Each microlens is configured to converge a light beam that passes through itself and reaches a pixel electrode to the inside of the peripheral portion of the pixel electrode, and a pixel where a plurality of pixel electrodes arranged in the matrix are arranged. When the arrangement pitch is P, the distance between the pixel electrodes is 1, and the thickness of the liquid crystal between the first substrate and the second substrate is d, P ≦ 30 × 10 ⁻⁶ m, l / d The relational expression of ≧ 1 must be satisfied And it features.

In a liquid crystal device having a high-definition structure of P ≦ 30 × 10 ⁻⁶ m, a sufficiently large distance between pixel electrodes can be ensured by satisfying the relationship of 1 / d ≧ 1. Therefore, the influence of a horizontal electric field received from an adjacent pixel electrode can be reduced, and generation of a disclination line can be eliminated.

In the present invention, l /
It is preferable that the relationship of d ≧ 2 is satisfied. With such a relationship, the rate of decrease in reflectance when viewed as a reflective liquid crystal device can be further reduced.

The present invention is characterized in that a liquid crystal having a negative dielectric anisotropy is used as the liquid crystal.

By applying a negative liquid crystal having a negative dielectric anisotropy, the liquid crystal can be made to stand up with respect to the substrate when no voltage is applied, and in this state, transmitted light passing through the liquid crystal layer Does not affect the birefringence of the liquid crystal at all, so that a beautiful black display with good tightness can be achieved. That is,
Black level is low and high contrast can be displayed.
In the present invention, when the pixel electrode has a rectangular shape and the pixel electrode width in a direction along the arrangement pitch of the pixels is W,
≦ 30 × 10 ⁻⁶ m is satisfied.

The present invention is particularly effective for a high-definition liquid crystal device having a pixel arrangement pitch of 30 × 10 ⁻⁶ m or less, and the present invention works more effectively as the pixel pitch becomes particularly small.

The present invention is characterized in that the pixel electrode in the above configuration is a light-reflective metal electrode. .

According to the present invention, the switching element is provided on the first substrate, the switching element is covered with an insulating layer, and the pixel electrodes made of a light-reflective metal electrode are arranged in a matrix on the insulating layer. The switching element and the pixel electrode are connected to each other through a connection conductor provided in a contact hole formed in the insulating layer, and an alignment film is provided to cover the pixel electrode. And

The pixel electrode is made of a light-reflective metal electrode,
With a structure in which a pixel electrode is formed on a liquid crystal switching element covered with an insulating layer, a horizontal electric field generated between the pixel electrode and a wiring can be ignored. Further, the pixel electrodes can be arranged regardless of the arrangement of the wirings and the switching elements.

According to the present invention, there is provided a projection display apparatus including the liquid crystal device according to any one of the above.

The present invention further comprises a light source, a light modulator for modulating light from the light source, and a projection lens for projecting light modulated by the light modulator. Or a liquid crystal device described in (1) or (2).

If a liquid crystal device having the above-described configuration is mounted as a projection type display device, a high-definition display can be performed even when an enlarged projection is performed, and a high-contrast display can be obtained.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments.

[Pixel Section of Liquid Crystal Device] A description will be given using a reflection type liquid crystal display device as an example of the liquid crystal device according to the present invention. First, a pixel portion of a reflective liquid crystal display device will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, a first light-shielding film, etc. are formed, and a second light-shielding film and a microlens formed on a counter substrate. It is. FIG. 3 is a schematic diagram showing, in a quasi-section, how incident light is collected by the microlenses formed on the opposing substrate. FIG. 4 is an enlarged view of a TFT array substrate portion relating to one TFT shown in FIG. It is an expanded sectional view shown as. FIG. 5 is an explanatory diagram showing a state in which a pixel electrode of the reflection type liquid crystal display device of the present embodiment is irradiated with a light beam through a microlens. In FIGS. 3, 4 and 5,
In order to make each layer and each member large enough to be recognizable on the drawing, the scale is different for each layer and each member. Further, in FIG. And the arrangement of the TFTs is slightly different from the actual arrangement. That is, actually, as shown in FIG. 2, the microlenses are arranged so that the lens centers thereof coincide with the centers of the respective pixels, and the TFTs are arranged so as to substantially correspond to the intersections of the light shielding regions. I have.

In FIG. 1, a plurality of pixels formed in a matrix and constituting an image display area of the liquid crystal device according to the present embodiment have TFTs 3 for controlling a pixel electrode 9a.
A plurality of 0s are formed in a matrix, and the data line 6a to which an image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. good. Also, T
The scanning line 3a is electrically connected to the gate of the FT 30, and is configured to apply the scanning signals G1, G2,..., Gm in a pulsed manner to the scanning line 3a in this order at a predetermined timing. ing.

The pixel electrode 9a is electrically connected to the drain of the TFT 30 and has a switching element TF.
By closing the switch for a certain period of time T30, the image signals S1, S2,
..., Sn is written at a predetermined timing. Pixel electrode 9a
Image signal S of a predetermined level written on the liquid crystal through
1, S2,..., Sn are held for a certain period of time between a counter electrode (described later) formed on a counter substrate (described later).

The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level.
Enables gradation display. If the liquid crystal is in the normally white mode, the incident light cannot pass through the liquid crystal portion according to the applied voltage, and if the liquid crystal is in the normally Bragg mode, the incident light will not pass through the liquid crystal portion according to the applied voltage. , And light having an intensity corresponding to the image signal is emitted from the liquid crystal device as a whole. Here, in order to prevent the held image signal from leaking, the storage capacitor 70 is provided in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.
Is added. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time during which the source voltage is applied. Thereby, the holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized.

In FIG. 2, a plurality of transparent pixel electrodes 9a are arranged in a matrix on a TFT array substrate of a liquid crystal device.
(Indicated by a solid line),
The data lines 6 are arranged at predetermined intervals along the outer periphery of the pixel electrode 9a so as to form a rectangular mesh in plan view as a whole.
a, a scanning line 3a, and a capacitance line 3b.

A TFT 30 is provided substantially corresponding to each intersection of these wirings. In FIG. 2, each data line 6a indicated by a dashed line and extending in the vertical direction
Is electrically connected to the source region of the TFT 30 in the semiconductor layer 1a made of a polysilicon film or the like via the contact hole 5. The pixel electrode 9a is electrically connected to the drain region of the TFT 30 in the semiconductor layer 1a via the contact hole 8. Further, each scanning line 3a extending in the left-right direction in FIG. 2 is a channel region 1a 'in the semiconductor layer 1a (in FIG. 2, an obliquely downward-sloping region located at the intersection of the data line 6a and the scanning line 3a). , And the scanning line 3 a functions as a gate electrode of the TFT 30.

The capacitance line 3b has a main line portion 3b1 extending substantially linearly along the scanning line 3a, and a projecting portion 3b2 protruding upward in the figure along the data line 6a from a portion intersecting the data line 6a. . Then, the semiconductor layer 1a is made of TF
The storage capacitor electrode 1f extends from T30 along the capacitor line 3b as the storage capacitor electrode 1f, and the storage capacitor electrode 1f and the capacitor line 3b are arranged to face each other via an insulating film (gate insulating film) described later as a dielectric. Thus, the storage capacitor 70 is formed.

In FIG. 2, a first light-shielding film 11a consisting of a plurality of striped portions is provided in a region indicated by a dashed line and extending in the left-right direction along the scanning line 3a and the capacitance line 3b. . More specifically, the first light-shielding film 11a is divided into a plurality of stripe portions extending along the main lines of the scanning lines 3a and the capacitance lines 3b, and each stripe portion intersects the data line 6a. The portions protrude downward in the figure along the data lines 6a from the locations where the TFTs 30 include the channel region 1a 'of the semiconductor layer 1a.

FIG. 2 further shows that each pixel electrode 1
The microlens ends 500a of the plurality of microlenses formed to face each of the microlenses 1a, and the mesh-shaped second light-shielding films 23 (upward to the right in the drawing) arranged on the counter substrate so as to face each of the microlens ends 500a ).

In this embodiment, in particular, a mesh-shaped light-shielding region is defined on the TFT array substrate from the first light-shielding film 11a and the data line 6a made of an AI (aluminum) film as an example of a light-shielding metal film. And the mesh-shaped second light-shielding film 2
Reference numeral 3 is planarly covered by the light shielding area. That is, the outline of the second light-shielding film 23 in plan view is included in the outline of the light-shielding region. Each pixel electrode 9a surrounded by a mesh-shaped light-shielding region defines a pixel opening region that is a region through which incident light is transmitted.

The incident light condensed by the microlens 500 is reflected by a circular condensing area 50 indicated by a broken line in FIG.
The light is focused on 0b. Since the pixel electrode 9a is formed corresponding to the light-collecting region 500b, the pixel electrode 9a
Will be described later.

As shown in FIG. 3, the TFT array substrate 10
And the opposing substrate 20 are arranged to face each other, and the liquid crystal layer 5 is interposed between the substrates.
0 is supported. The TFT array substrate 10 is made of, for example, a quartz substrate or a Si (silicon) substrate.
0 is made of, for example, a glass substrate or a quartz substrate.

As shown in the cross-sectional portion of the schematic diagram of FIG. 3, on the opposing substrate 20 of the liquid crystal device, the incident light incident from the opposing substrate 20 side is arranged in a matrix for condensing on a plurality of pixel electrodes 9a. And a second light shielding film 23 formed at a position facing each of the boundaries of the plurality of microlenses 500. A cover glass 502 is adhered to the entire surface of the microlens 500 with an adhesive 501, on which a second light-shielding film 23 and a counter electrode 21 are further provided (on the liquid crystal layer side as shown in FIG. 3). Is formed. Micro lens 50
0 is made of a photosensitive resin and has an adhesive 50 as described later.
Reference numeral 1 denotes an acrylic adhesive having a refractive index close to that of air, and the microlens 500 functions as a condenser lens due to a difference in refractive index between the two.

In the sectional view of the schematic diagram of FIG. 3 and the enlarged sectional view of FIG. 4, a pixel electrode 9a is provided on the TFT array substrate 10 side, and rubbing is provided on the upper side (the liquid crystal layer 50 side). An alignment film 16 on which a predetermined alignment process such as a process is performed is provided. The pixel electrode 9a is made of, for example, Al, A
It is made of a light-reflective conductive thin film mainly composed of g or the like.
The alignment film 16 is made of, for example, an organic thin film such as a polyimide thin film.

On the other hand, as shown in the schematic diagram of FIG. 3, a counter electrode (common electrode) 21
Is provided below (on the liquid crystal layer 50 side) an alignment film 22 that has been subjected to a predetermined alignment process such as a rubbing process. The counter electrode 21 is made of, for example, a transparent conductive thin film such as an ITO film. The alignment film 22 is made of, for example, an organic thin film such as a polyimide thin film.

Next, as shown in the enlarged sectional view of FIG.
The FT array substrate 10 is provided with a pixel switching TFT (switching element) 30 for controlling switching of each pixel electrode 9a at a position adjacent to each pixel electrode 9a.

A sealing material (described later with reference to FIGS. 6 and 7) is provided between the TFT array substrate 10 and the opposing substrate 20 having the above-described structure and in which the pixel electrode 9a and the opposing electrode 21 are arranged so as to face each other. The liquid crystal is sealed in the space surrounded by (), and the liquid crystal layer 50 is formed. The liquid crystal layer 50 adopts a predetermined alignment state by the alignment films 16 and 22 in a state where no voltage is applied from the pixel electrode 9a. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed, or a liquid crystal having a negative dielectric anisotropy described later. The sealing material is an adhesive made of, for example, a photo-curable resin or a thermosetting resin for bonding the two substrates 10 and 20 around the periphery thereof.
Spacer such as glass fiber or crow beads for setting the distance between both substrates to a predetermined value (not shown in the drawing)
Is mixed in.

As shown in FIG. 4, the pixel switching T
A first light-shielding film 11a is provided between the TFT array substrate 10 and each pixel switching TFT 30 at a position facing each FT 30. First light shielding film 11a
Are preferably opaque refractory metals Ti, Cr,
W, Ta, containing at least one of Mo and Pd, composed of a single metal, alloy, metal silicide, etc.,
If the TFT array substrate 10 is made of such a material,
The first light-shielding film 11a can be prevented from being broken or melted by the high-temperature treatment in the step of forming the pixel switching TFT 30 performed after the step of forming the first light-shielding film 11a. Since the first light shielding film 11a is formed, TF
Return light and the like from the side of the T-array substrate 10 are applied to the channel region 1a 'and the LDD region 1
It is possible to prevent incidents on b and 1c beforehand, and to prevent deterioration of the characteristics of the pixel switching TFT 30 due to generation of a photocurrent.

A first interlayer insulating film 12 is provided between the first light shielding film 11a and the plurality of pixel switching TFTs 30.
Is provided. The first interlayer insulating film 12 is provided for electrically insulating the semiconductor layer 1a constituting the pixel switching TFT 30 from the first light-shielding film 11a. Further, the first interlayer insulating film 12 is formed on the TFT array substrate 1.
By being formed on the entire surface of 0, it also has a function as a base film for the pixel switching TFT 30. That is, the pixel switching TFT 3 may be roughened during polishing of the surface of the TFT array substrate 10 or stains remaining after cleaning.
0 has the function of preventing the deterioration of the characteristic. The first interlayer insulating film 12 is, for example, a highly insulating glass such as NSG (non-doped silicate glass), PSG (phosphosilicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), or a silicon oxide film. , A silicon nitride film or the like. Due to the first interlayer insulating film 12, the first light-shielding film 11a is formed by the pixel switching TFT 3
It is also possible to prevent a situation where 0 or the like is contaminated. In addition,
When an opaque Si substrate is used for the TFT array substrate,
The first light shielding film 11a becomes unnecessary.

In this embodiment, the gate insulating film 2 is extended from a position facing the scanning line 3a to be used as a dielectric film, and the semiconductor layer 1a is extended to form a first storage capacitor electrode 1f. A storage capacitor 70 is formed by using a part of the capacitor line 3b opposed to the first storage capacitor electrode as a second storage capacitor electrode. More specifically, a high-concentration drain region 1e of the semiconductor layer 1a extends below the data line 6a and the scanning line 3a, and an insulating film is formed on a portion of the capacitance line 3b extending along the data line 6a and the scanning line 3a. 2 opposed to each other, the first
It is a storage capacitor electrode (semiconductor layer) 1f. In particular, since the insulating film 2 as a dielectric of the storage capacitor 70 is nothing but the gate insulating film 2 of the TFT 30 formed on the polysilicon film by high-temperature oxidation, it can be a thin and high withstand voltage insulating film. The capacitor 70 can be configured as a large-capacity storage capacitor with a relatively small area.

As a result, the storage capacity of the pixel electrode 9a can be increased by effectively utilizing the space under the data line 6a and the space along the scanning line 3a, which is outside the opening region. Note that the pixel electrode 9a may be formed over the data line 6a or the scanning line 3a via an insulating film.

In FIG. 4, the pixel switching TFT
Reference numeral 30 denotes an LDD (Lightly Doped Drain)
n) a scanning line 3a having a structure, a channel region 1a 'of a semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a, and a gate insulating film 2 for insulating the scanning line 3a from the semiconductor layer 1a. , Data line 6a, low-concentration source region (source-side LDD region) 1b and low-concentration drain region (drain-side LDD region) 1c of semiconductor layer 1a, high-concentration source region 1d and high-concentration drain region 1e of semiconductor layer 1a. ing. A corresponding one of the plurality of pixel electrodes 9a is connected to the high-concentration drain region 1e. The source regions 1b and 1d and the drain regions 1c and 1e are formed by doping the semiconductor layer 1a with a predetermined concentration of n-type or p-type dopant depending on whether an n-type or p-type channel is formed. Is formed.

An n-type channel TFT has the advantage of a high operating speed, and is often used as a pixel switching TFT 30 which is a pixel switching element. In this embodiment, in particular, the data line 6a is formed of a light-shielding thin film such as a low-resistance metal film such as A1 or an alloy film such as metal silicide. On the scanning line 3a, the gate insulating film 2, and the first interlayer insulating film 12, a contact hole 5 leading to the high-concentration source region 1d and a contact hole 8 leading to the high-concentration drain region 1e are respectively formed. An interlayer insulating film 4 is formed. Via the contact hole 5 to the source region 1b, the data line 6a
Are electrically connected to the high concentration source region 1d. Further, a third interlayer insulating film 7 having a contact hole 8 to the high-concentration drain region 1e is formed on the data line 6a and the second interlayer insulating film 4.

The pixel electrode 9a is electrically connected to the high-concentration drain region 1e via the contact hole 8 to the high-concentration drain region 1e. The aforementioned pixel electrode 9a
Is provided on the upper surface of the third interlayer insulating film 7 configured as described above. The pixel electrode 9a and the high-concentration drain region 1e are connected to the same A1 film as the data line 6a or the scanning line 3b.
And the same polysilicon film may be relayed for electrical connection.

The pixel switching TFT 30 preferably has an LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c. A self-aligned TFT in which impurity ions are implanted at a high concentration using 3a as a mask to form high-concentration source and drain regions in a self-aligned manner may be used.

In this embodiment, the gate electrode (data line 3a) of the pixel switching TFT 30 is connected to the source
Although only one single gate structure is arranged between the drain regions 1b and 1e, two or more gate electrodes may be arranged between them. At this time, the same signal is applied to each gate electrode. When a TFT is formed with a dual gate (double gate) or triple gate or more as described above, a leak current at a junction between a channel and a source-drain region can be prevented, and a current in an off state can be reduced. If at least one of these gate electrodes has an LDD structure or an offset structure, the off-state current can be further reduced, and a stable switching element can be obtained.

The pixel electrode 9a of the present embodiment has a square main body 9a1 surrounding the outer periphery of the circular condensing region 500b, and a lower portion of a contact hole 8 shown in FIG. It is formed in an inverted convex shape in plan view, comprising an extended portion 9a2 for connection with the transistor portion. The intervals between the body portions 9a1 of the plurality of pixel electrodes 9a arranged in a matrix (the interval in the left-right direction in FIG. 2 and the interval in the up-down direction in FIG. 2) have the following relationship.

First, as shown in FIG. 5 which shows a simplified arrangement relationship of the pixel electrode main portions, the interval between the main portions 9a1 is set to l.
(× 10 ⁻⁶ m), and the arrangement pitch of the pixels at which the pixel electrodes are arranged (in other words, corresponding to the width of the microlens) is P
(× 10 ⁻⁶ m), and the thickness of the liquid crystal layer (more precisely, the thickness of the liquid crystal layer in the region corresponding to the pixel electrode 9 a). The alignment film 16 on the substrate 10 side and the alignment film on the substrate 20 side 22) and d (× 10 ⁻⁶ m), P ≦ 30 × 10 ⁻⁶
When m, l / d ≧ 1 is preferable, and l / d ≧ 2
Is more preferable.

The liquid crystal constituting the liquid crystal layer has a homeotropic state in which liquid crystal molecules are perpendicular to the substrate (stand up with respect to the substrate) when no voltage is applied, and tilt (or parallel) with respect to the substrate when voltage is applied. It is preferable to use a negative type liquid crystal having a negative dielectric anisotropy for orientation. Also,
In the case of using the negative type liquid crystal, it is necessary that the alignment films 16 and 22 of the liquid crystal panel have been subjected to an alignment treatment for raising liquid crystal molecules when no voltage is applied.

Since the liquid crystal device of the present embodiment is configured as described above, the incident light from the opposing substrate 20 is reduced by the plurality of pixel electrodes by the plurality of microlenses 500 provided on the opposing substrate 20. Each light is condensed on 9a. Therefore, the effective aperture ratio in each pixel is increased as compared with the case where the micro lens 500 is not provided.

Further, the incident light from the counter substrate 20 side is condensed by the microlens 500 on the pixel electrode 9a.
00b (see FIGS. 2 and 5), the utilization efficiency of the incident light is increased, and the mechanical strength and the heat blocking performance of the opposing substrate 20 are each increased by the presence of the second light shielding film 23. , Is significantly increased as compared with the case where the second light shielding film 23 is not provided.

Further, the pixel electrode 9a is determined by the equation P ≦ 30 × 1.
When 0 ^-6 m is satisfied, the relationship of 1 / d ≧ 1 is satisfied. Therefore, even if a voltage having a different polarity is temporarily applied to a plurality of adjacent pixel electrodes 9a and a horizontal electric field is generated, the adjacent pixel electrodes 9a are not connected to each other. Since the distance between the electrodes 9a is sufficiently large, the lateral electric field acting on the liquid crystal corresponding to the peripheral region of the pixel electrode 9a from another adjacent pixel electrode 9a can be reduced. Nation is unlikely to occur. If this disclination is unlikely to occur,
Since the generation of disclination lines can be prevented,
It is possible to prevent a decrease in reflectance when viewed as a reflection type liquid crystal display device, and to obtain a high definition display even with a high definition type reflection type liquid crystal display device having a small pixel electrode 9a.

Further, a liquid crystal display device of a vertical alignment mode (SH mode) in which a negative type liquid crystal having a negative dielectric anisotropy is used as the liquid crystal and stands up with respect to the substrates 10 and 20 when no voltage is applied. Then, when no voltage is applied, the liquid crystal molecules are oriented with their long axes standing upright with respect to the substrates 10 and 20, so that there is no birefringence phenomenon caused by these liquid crystal molecules, and the black level is low and the contrast ratio is high. Can be obtained.

In this embodiment, the embodiment in which the present invention is applied to the reflection type liquid crystal display device has been described.
Of course, the present invention may be applied to a transmission type liquid crystal display device. In that case, in the cross-sectional structure shown in FIG. 3, the metal electrode 9a may be formed of a transparent conductive film such as an ITO (indium tin oxide) film.

"Overall Configuration of Liquid Crystal Device" The overall configuration of each embodiment of the liquid crystal device configured as described above will be described with reference to FIGS. In FIG. 6, a sealing material 52 is provided on the TFT array substrate 10 along the edge thereof.
A third light-shielding film 53 is provided as a peripheral parting stop made of the same or different material. The data line driving circuit 101 and the mounting terminals 102 are provided in a region outside the sealing material 52.
Are provided along one side of the TFT array substrate 10, and the scanning line driving circuit 104 is provided along two sides adjacent to the one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, the scanning line driving circuit 1
It goes without saying that 04 may be on one side only. Also,
The data line driving circuits 101 may be arranged on both sides along the side of the image display area. Further, a plurality of wirings 105 for connecting the scanning line driving circuits 104 provided on both sides of the image display area are provided on the remaining one side of the TFT array substrate 10. Then, as shown in FIG. 7, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 6 is fixed to the TFT array substrate 10 by the sealing material 52.

On the side of the opposing substrate 20 on which the projected light is incident and on the side of the TFT array substrate 10 from which the emitted light is emitted, for example, a TN (twisted nematic) mode, an STN (super TN) mode, and an SH (super TN) mode are provided. Polarizing films, retardation films, polarizing plates, etc. are appropriately arranged in predetermined directions according to operation modes such as super homeotropic), ferroelectric liquid crystal (FLC) mode, and normally white mode / normally Bragg mode. Is done.

Since the liquid crystal device in each of the above-described embodiments is applied to a color liquid crystal projector, three liquid crystal devices are used as RGB light valves, and each liquid crystal device has an RGB color separation device. The light of each color decomposed via the dichroic mirror is incident as projection light.

Therefore, in the present embodiment, the opposing substrate 20
No color filter is provided on the side. However, an RGB color filter may be formed on the opposing substrate 20 in a predetermined area facing the pixel electrode 9a where the second light-shielding film 23 is not formed, together with the protective film. In this way, the liquid crystal device according to each embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector. Furthermore, the opposing substrate 20
A dichroic filter that produces RGB colors using light interference may be formed by depositing a number of interference layers having different refractive indices thereon. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

The switching element provided in each pixel has been described as a normal stagger type or co-blanner type polysilicon TFT.
The embodiments are also effective for other types of TFTs such as TFTs and amorphous silicon TFTs.

Further, the light-collecting ability of the microlens 500 is sufficient if the light-collecting area 500b (see FIG. 2) can be focused so as to just fit in the main body 9a1 of the pixel electrode 9a. In other words, it is not necessary to make the pixel electrode 9a smaller than 500b. Further, since the effective aperture ratio in each pixel is increased by the micro lens 500, the scanning line 3 is increased in order to increase the pixel aperture area.
a, the line width of the capacitor line 3b and the data line 6a, and the planar size of the TFT 30 need not be reduced more than necessary. Therefore, the present embodiment is very suitable for the case where the arrangement pitch of the pixels is reduced to miniaturize each pixel.

In this embodiment, the pixel electrode 9a is driven by using a TFT. However, an active matrix element such as a TFD (Thin Film Diode) other than the TFT is used. It is also possible to configure the liquid crystal device as a passive matrix type liquid crystal device. Even in such a case, as long as the configuration in which the light is condensed on the pixel electrode by the microlens 500 is employed, it is effective in improving the light use efficiency as in the case of the present embodiment.

FIG. 8 is for explaining a driving method applicable to driving the liquid crystal device of the present embodiment. First, assuming that a section-shaped region surrounded by a frame line as shown in FIG. 8A is regarded as one pixel, a method of driving all pixels with a voltage of the same polarity for each frame, in other words, FIG. In the frame shown in FIG. 8A, a positive potential is applied to all the pixels, and in another frame (not shown), a negative potential is applied to all the pixels. A drive system can be adopted. Secondly, as shown in FIG. 8B, a dot inversion driving method in which voltages having different polarities are applied to each of the pixels adjacent to each other in the upper, lower, left, and right directions to drive them can be adopted.
Third, as shown in FIG. 8C, the potential applied to each horizontal line is set to the opposite polarity, or the potential applied to each vertical line is set to the opposite polarity as shown in FIG. 8D. Can be adopted.

Here, in the conventional high-definition reflective liquid crystal device, in a structure in which the interval between a plurality of pixel electrodes is narrowed to about 1 × 10 ⁻⁶ m, only the frame inversion driving method can be adopted due to the influence of the lateral electric field. When the dot inversion drive or the frame inversion drive is performed, there is a possibility that a disclination line is generated and a display defect is caused. However, by adopting the structure of the embodiment of the present invention, a gap between adjacent pixels can be obtained. In the liquid crystal device of the present invention, since the possibility of generating a disclination line in the display area is reduced even if a driving method in which the polarity of the applied voltage is different is adopted in the liquid crystal device of the present invention, FIGS.
The dot inversion driving method and the line inversion driving method shown in FIG. 9D can be adopted without causing disclination. Therefore, any driving method can be applied to a high-definition type liquid crystal device, and versatility when the driving method is adopted can be improved.

FIG. 9 shows an enlarged structure of a thin film transistor portion of an element substrate applied to a second embodiment of the reflection type liquid crystal device according to the present invention. The thin film transistor of this embodiment is a silicon substrate (first substrate). ) Is a semiconductor circuit.

In FIG. 9, reference numeral 101 denotes a P-type or N-type semiconductor substrate such as single crystal silicon (first substrate).
Reference numeral 102 denotes a P-type or N-type well region formed on the surface of the semiconductor substrate 101 and having a higher impurity concentration than the substrate. The well region 102 is not particularly limited. For example, in the case of a high-definition liquid crystal panel having 768 × 1024 or more pixels, the well region of those pixels is formed as a common well region. It may be formed separately from a well region where elements constituting peripheral circuits such as other data line driving circuits, scanning line driving circuits, input circuits, and timing circuits are formed.

Reference numeral 103 denotes a field oxide film for device isolation (so-called LOCO) formed on the surface of the semiconductor substrate 101.
S). The field oxide film 103 is formed by, for example, selective thermal oxidation. An opening is formed in the field oxide film 103, and a gate electrode 105a made of polysilicon or metal silicide and a scanning line are formed at the center of the inside of the opening via a gate oxide film 114 formed by thermal oxidation of the surface of the silicon substrate. Are formed on the substrate surface side on both sides of the gate electrode 105a, and a source region 106a and a drain region 106b composed of an N-type impurity layer (doping layer) having a higher impurity concentration than the well region 102 are formed. A transistor (FET: switching element) 105 is configured.

The source and drain regions 106a, 10a
Above 6b, BPSG (BoronPhosphorus Silica G
rass) through a first interlayer insulating film 104 such as a film, a first conductive layer 107a, 10a made of a first aluminum layer.
7b is formed, and the first conductive layer 107a is electrically connected to the source region 106a through a contact hole formed in the insulating film 104 to supply a voltage of a data signal to the source region 106a. (Corresponding to a data line). The first conductive layer 107b forms a drain electrode formed on the insulating film 104.

Further, the first conductive layers 107a, 107
a second insulating film, such as silicon dioxide,
An interlayer insulating layer 108 is formed, and further above the second conductive layer 1 made of an aluminum layer or a tantalum layer.
09 is formed. The surface of the second conductive layer 109 is desirably planarized in order to form the storage capacitor 113 of the pixel.

On the second conductive layer 109, at or near the common potential electrode Vcom in the liquid crystal panel, or at or near the center potential of the amplitude of the voltage (data signal voltage) applied to the pixel electrode (reflection electrode) 112. Alternatively, a wiring for giving a predetermined potential of the common electrode potential and a potential intermediate between the voltage amplitude center voltages is electrically connected. Note that the common electrode potential Vcom corresponds to an inversion center potential when the liquid crystal layer is driven for polarity inversion.

A third insulating layer 110 made of a material having a high dielectric constant such as silicon dioxide, silicon nitride, or tantalum oxide is formed above the second conductive layer 109, and is connected to the drain electrode 107b. A pixel electrode 102 made of a light-reflective metal having a rectangular shape is formed.

The pixel electrodes 12 shown in FIG. 9 are arranged in a matrix on the third insulating layer 110 as in the previous embodiment, and an alignment film not shown in the drawing is formed on these pixel electrodes 112. At the same time, on the side facing the semiconductor substrate 101, a counter substrate similar to that of the previous embodiment is arranged, and a liquid crystal layer is sandwiched between these substrates to constitute a liquid crystal display device as in the case of the previous embodiment. ing.

In the semiconductor substrate 101 of the liquid crystal display device of the second embodiment, similarly to the structure of the previous embodiment, the pitch P between adjacent pixel electrodes, the pixel electrode interval l, and the thickness d of the liquid crystal layer are equal. The relationship has been.

That is, when P ≦ 30 × 10 ⁻⁶ m,
The relational expression of 1 / d ≧ 1 is satisfied.

In the structure of the second embodiment, the first
The same effect as the structure of the embodiment can be obtained, and a high-contrast display mode can be obtained because no disclination line is generated.

FIG. 10 illustrates the configuration of a projection display device (liquid crystal projector) as an application example using the liquid crystal device of the present embodiment. FIG. 10 is a cross-sectional view of the liquid crystal projector on an XY plane passing through the center of the optical element 750.

The liquid crystal projector according to the present embodiment is a polarized light illuminating device 700 generally constituted by a light source section 710, an integrator lens 720, and a polarization converting element 730 arranged along the system optical axis L. A polarizing beam splitter 740 that reflects the S-polarized light beam reflected by the S-polarized light beam reflecting surface 741, and a dichroic that separates a blue light (B) component from the light reflected from the S-polarized light beam reflecting surface 741 of the polarizing beam splitter 740. A mirror 742, a reflective liquid crystal light valve 745B for modulating the separated blue light (B), and a dichroic mirror 743 for reflecting and separating the red light (R) component of the light beam after the blue light is separated. , A reflective liquid crystal light valve 745R for modulating the separated red light (R), and a dichroic mirror 743. The reflection type liquid crystal light valve 745G for modulating the green light (G) of the remaining light passing therethrough, the light modulated by the three reflection type liquid crystal light valves 745R, 745G, and 745B are used as dichroic mirrors 743 and 742, and a polarization beam splitter. The projection optical system 750 is composed of a projection lens that combines the lights at 740 and projects the combined light on the screen 760. The three reflective liquid crystal light valves 745R, 745G, and 745B are respectively provided with the liquid crystal display device (liquid crystal panel) described in the above embodiment.
Is used.

The randomly polarized light beam emitted from the light source section 710 is divided into a plurality of intermediate light beams by the integrator lens 720, and then the polarized light beam is substantially converted by the polarization conversion element 720 having the second integrator lens on the light incident side. After being converted into one kind of uniform polarized light beam (S-polarized light beam), the light reaches the polarizing beam splitter 740. The S-polarized light beam emitted from the polarization conversion element 730 is reflected by the S-polarized light beam reflection surface 7 of the polarizing beam splitter 740.
Among the light beams reflected and reflected by 41, the light beam of blue light (B) is reflected by the blue light reflection layer of the dichroic mirror 742, and is modulated by the reflection type liquid crystal light valve 745B. Further, among the light beams transmitted through the blue light reflecting layer of the dichroic mirror 742, the light beam of red light (R) is reflected by the red light reflecting layer of the dichroic mirror 743 and is modulated by the reflective liquid crystal light valve 745R. . On the other hand, the light flux of the green light (G) transmitted through the red light reflecting layer of the dichroic mirror 743 is modulated by the reflective liquid crystal light valve 745G. As described above, color light is modulated by the reflective liquid crystal light valves 745R, 745G, and 745B.

These reflection type light valves 745R, 745R,
The reflection type liquid crystal panels of 45G and 745B are provided with a TN type liquid crystal (a liquid crystal in which the major axis of liquid crystal molecules is oriented substantially parallel to the panel substrate when no voltage is applied) or an SH type liquid crystal (a major axis of the liquid crystal molecule is applied with no voltage Sometimes a liquid crystal oriented substantially at right angles to the panel substrate) can be employed, but among them, SH type liquid crystal is preferable.

When the SH type liquid crystal is adopted, the liquid crystal molecules are completely erected when no voltage is applied, so that the birefringence phenomenon due to the liquid crystal does not occur. Thus, an ideal black state can be obtained, and a liquid crystal display with high contrast can be realized. On the other hand, when a voltage is applied to the liquid crystal layer, the liquid crystal molecules are tilted from the normal direction of the panel substrate, and elliptically polarized light is obtained by the birefringence of the liquid crystal molecules, so that a bright state can be realized.

Among the color lights reflected from the pixels of the liquid crystal panel, the S-polarized light component does not pass through the polarization beam splitter 740 that reflects the S-polarized light, and the P-polarized light component does.
An image is formed by the light transmitted through the polarizing beam splitter 740. Therefore, when the TN type liquid crystal is used for the liquid crystal panel, the reflected image of the OFF pixel reaches the projection optical system 750 and does not reach the reflective lens of the ON pixel. When the SH type liquid crystal is used, the reflected light of the OFF pixel does not reach the projection optical system and the reflected light of the ON pixel reaches the projection optical system 750, so that a normally black display is obtained.

The reflection type liquid crystal panel has a TFT on a glass substrate.
Compared to an active matrix type liquid crystal panel with an array, the pixels are formed using semiconductor technology, so the number of pixels can be increased and the panel size can be reduced, so that a high-definition image can be projected and the projector itself Contributes to downsizing.

[Embodiment of Electronic Apparatus] Next, a specific example of an electronic apparatus including any one of the liquid crystal display devices of the above embodiments will be described.

FIG. 11A is a perspective view showing an example of a portable telephone. In FIG. 11A, reference numeral 1000 denotes a mobile phone main body (electronic device), and reference numeral 1001 denotes a liquid crystal display unit using any of the above liquid crystal display devices.

FIG. 11B is a perspective view showing an example of a wristwatch-type electronic device. In FIG. 11B, reference numeral 1
Reference numeral 100 denotes a watch main body (electronic device), and reference numeral 1101 denotes a liquid crystal display unit using any of the above liquid crystal display devices.

FIG. 11C is a perspective view showing an example of a portable information processing device such as a word processor or a personal computer. In FIG. 11C, reference numeral 1200 denotes an information processing device (electronic device), reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing device main body, and reference numeral 1206 denotes a liquid crystal using any of the above liquid crystal display devices. The display unit is shown.

Each of the electronic devices shown in FIGS. 11A to 11C includes a liquid crystal display unit using any of the above-described liquid crystal display devices, and includes any one of the above-described embodiments. Since the liquid crystal display device has the features described above, a high-definition display with a high contrast ratio can be obtained using any of the liquid crystal display devices.

[0090]

EXAMPLE A thin-film transistor driven liquid crystal panel having a structure in which a pixel electrode was formed inside a pixel defined by a mesh-shaped light-shielding film shown in FIG. 2 was manufactured. Forming a first light-shielding film made of Cr on the portion corresponding to the thin film transistor forming position on the glass substrate, to cover the first light shielding film to form a first insulating layer of SiN _X, then the formation of the semiconductor film, a gate Electrode forming step, SiN _X gate insulating film forming step, ion doping step, SiN _X second insulating layer forming step, Cr capacitor electrode formation, SiN _X third insulating layer formation, contact hole formation The process, a pixel electrode forming process, an alignment film forming process, and a rubbing process were performed to obtain a thin film transistor array substrate having various wirings and pixel electrodes shown in FIG. In this thin film transistor array substrate, the pixel pitch P is 25 × 10 ⁻⁶ m square, and the pixel electrode disposed inside the pixel in plan view is 15 × 10 ⁻⁶ m square.

Also, separately, a neoceram substrate, a microlens made of a photosensitive resin formed on the substrate, an acrylic adhesive layer covering the microlens, a cover glass, a common electrode layer, and an alignment film Is formed, a negative nematic liquid crystal is sealed between the previous substrate and this counter substrate, and a cell gap corresponding to the thickness of the liquid crystal layer is set to 5 × 10 ⁻⁶ m. The liquid crystal panel was assembled. In the liquid crystal panel having this structure, the alignment film was made to be in a vertical alignment mode by using a polyimide organic material for vertically aligning the liquid crystal, and the value of 1 / d was set to 2.

Incidentally, in a liquid crystal display device having this kind of structure,
And the size of the pixel electrode is 100 × 10^-6m to 10 × 10
^-610 × 10 up to m^-6Multiple liquid crystal panels changed every m
And a pixel pitch (× 10) for each liquid crystal panel.^-6
m) and pixel area (× 10^-6m ^Two) And generated disc
Nation area (× 10^-6m^Two) And effective aperture ratio (%)
Are shown in Table 1 below.

The disclination area in Table 1 was calculated based on a disclination line width of 3 × 10 ⁻⁶ m measured by the present inventor in a conventional liquid crystal display device.

[Table 1] Pixel pitch 100 90 80 70 60 50 40 30 20 10 Pixel area 10000 8100 6400 4900 3600 2500 1600 900 400 100 Disclination area 424 381 339 297 254 212 169 127 84 42 Effective aperture ratio 95.8 95.3 94.7 93.9 92.9 91.5 89.4 85.9 78.8 57.6

From the results shown in Table 1, when a disclination line is generated, the effective aperture ratio, which is shown as a ratio of the effective area in which display is not affected by the disclination line in the display area, is expressed by a pixel pitch of 30 ×
When the pixel pitch is 10 ^-6 m (μm) or less, the ratio becomes less than 85%. Therefore, it is considered to be effective in the case of a smaller pixel pitch even within a pixel pitch of 30 × 10 ^-6 m or less. Specifically, when the pixel pitch is 20 × 10 ⁻⁶ m, the effective aperture ratio is 8
When the pixel pitch is 0% or less and the pixel pitch is 10 × 10 ⁻⁶ m or less, the effective aperture ratio is 60% or less.

Next, a reflection type liquid crystal display device which performs display by the frame inversion driving method and has no influence of the horizontal electric field is constituted.
The reflectance was measured. The measurement result was 45.8%.
The liquid crystal display device was switched to the dot inversion driving method, and the results of measuring the reflectance when the value of l / d was changed to various values are shown in Table 2 below. In this measurement,
The thickness d of the liquid crystal layer is set to a constant value of 4 × 10 ⁻⁶ m, and the pixel pitch P
^Was measured as a constant value of 20 × 10 ⁻⁶ m.

[Table 2] l 1 2 3 4 5 6 7 8 9 10 l / d 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Reflectance 35.0 37.2 41.5 42.1 43.6 44.1 44.8 45.3 45.5 45.8

From the measurement results shown in Table 2, the value of 1 / d was 1
With the above, it can be seen that the reflectance is suppressed to less than 10% of the reflectance of the reflective liquid crystal display device in which no horizontal electric field is generated. When the value of 1 / d is 2 or more, it can be seen that the reflectance is reduced to less than 2% of the reflectance of the reflective liquid crystal display device in which no lateral electric field is generated. Therefore, if the relationship between l and d is set to the relationship according to the present invention, it has been clarified that a decrease in the reflectance due to the generation of the disclination line can be suppressed in the reflective liquid crystal display device.

[0099]

As described above, according to the present invention, the arrangement pitch of a plurality of pixels arranged in a matrix is P,
When the distance between the pixel electrodes is 1 and the thickness of the liquid crystal between the first substrate and the second substrate is d, P ≦ 30 × 10
^In a high-definition liquid crystal device satisfying the condition of ^-6 m, l /
Since the relational expression of d ≧ 1 is satisfied, the possibility of being affected by the lateral electric field of another adjacent pixel electrode is reduced,
Since disclination lines can be prevented from being generated in the aligned liquid crystal, a liquid crystal device having a high contrast ratio, a high quality, and a high reliability display mode can be obtained even with a high definition display configuration.

Further, if the projection type display device is provided with this liquid crystal device, it is possible to provide a high quality, high reliability, high performance liquid crystal projector with a bright screen.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device according to the present invention.

FIG. 2 shows a data line of the liquid crystal device according to the present invention;
FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which a scanning line, a pixel electrode, a first light-shielding film, and the like are formed, and a second light-shielding film and a microlens formed on a counter substrate.

FIG. 3 is a schematic diagram showing, in a quasi-section, how incident light is collected by a microlens formed on a counter substrate of the liquid crystal device according to the present invention.

FIG. 4 is a diagram illustrating a TF according to one TFT shown in FIG. 3;
It is an expanded sectional view which expands and shows a T array substrate part.

FIG. 5 is a schematic explanatory diagram for explaining a relationship between a pixel pitch, a pixel electrode interval, and a liquid crystal layer thickness of the liquid crystal device according to the present invention.

FIG. 6 is a diagram illustrating an overall configuration of a liquid crystal device including one embodiment of the liquid crystal device according to the present invention.

7 is a cross-sectional view of the liquid crystal device shown in FIG. 6, taken along line HH ′.

FIG. 8 shows a driving method that can be used for driving the liquid crystal device according to the present invention.
8A is an explanatory diagram illustrating a voltage distribution for each pixel for explaining a frame inversion driving method, and FIG. 8B is an explanatory diagram illustrating a voltage distribution for each pixel for explaining a dot inversion driving method. FIG. 8C is an explanatory diagram showing a voltage distribution of each pixel for explaining an example of the line inversion driving method, and FIG. 8D is a voltage distribution of each pixel for explaining another example of the line inversion driving method. FIG.

FIG. 9 is a cross-sectional view showing an embodiment using a Si substrate as a substrate in the liquid crystal device according to the present invention.

FIG. 10 is a configuration diagram illustrating an embodiment of a liquid crystal projector including a liquid crystal device according to the present invention.

11 shows an example of an electronic apparatus to which the liquid crystal display device of each embodiment is applied. FIG. 11 (a) is a perspective view showing a mobile phone, and FIG. 11 (b) is a perspective view showing a wristwatch. FIG. 11C is a perspective view showing a portable information processing apparatus.

FIG. 12 is an explanatory diagram showing a positional relationship between a pixel electrode on the element substrate side and a common electrode on the counter substrate side provided in a conventional liquid crystal device.

FIG. 13 is an explanatory diagram showing a state in which disclination has occurred in the alignment state of the liquid crystal under the influence of a lateral electric field in the liquid crystal device.

FIG. 14 is a diagram showing a state in which a character A is displayed in black display on white display in a conventional liquid crystal device.

[Explanation of symbols]

8 contact hole 9a pixel electrode 10 first substrate 16 insulating layer 10 second substrate 30 TFT (thin film transistor: switching element) 50 liquid crystal layer 101 semiconductor substrate (first substrate) 105 field effect transistor ( FET: switching element 112: pixel electrode (reflective electrode) 500: microlens 700: projection display device 1000: mobile phone (electronic device) 1100: wristwatch (electronic device) 1200: information processing device (electronic device) P: pixel Pitch l: distance between pixel electrodes d: thickness of liquid crystal layer W: pixel electrode width T: projection type display device

 ──────────────────────────────────────────────────続 き Continued from the front page F term (reference) 2H091 FA29Y FB04 FB12 FC10 FC23 FD04 FD23 GA13 GA17 HA06 LA03 LA11 LA12 LA18 2H092 HA05 JA23 JA29 JA38 JA42 JA46 JB13 JB23 JB32 JB38 JB56 JB63 JB69 KA03 MA14 MA07 MA07 MA20 MA25 MA26 MA27 MA35 MA37 MA41 NA04 NA25 PA07 QA06 RA05

Claims (9)

[Claims] 1. A liquid crystal is sandwiched between a pair of first and second substrates, and a plurality of pixel electrodes arranged in a matrix on the first substrate and each of the plurality of pixel electrodes is driven. A plurality of switching elements are provided, and microlenses are provided on the second substrate so as to correspond to the respective pixel electrodes. Each microlens passes a light beam passing therethrough to reach the pixel electrodes from the peripheral edge of the pixel electrodes. And the arrangement pitch of the pixels on which the plurality of pixel electrodes arranged in a matrix are arranged is P, the distance between the pixel electrodes is 1, the first substrate and the second The thickness of the liquid crystal between the substrate and d
A liquid crystal device characterized by satisfying a relational expression of P ≦ 30 × 10 ⁻⁶ m and 1 / d ≧ 1. 2. The liquid crystal device according to claim 1, wherein a relationship of 1 / d ≧ 2 is satisfied in the relational expression. 3. The liquid crystal device according to claim 1, wherein a liquid crystal having a negative dielectric anisotropy is used as the liquid crystal. 4. The pixel electrode has a substantially quadrangular shape in plan view, and has a pixel electrode width of W in a direction along an arrangement pitch of the pixels.
^4. The liquid crystal device according to claim 1, wherein the relationship W ≦ 30 × 10 ⁻⁶ m is satisfied. 5. The liquid crystal device according to claim 1, wherein the pixel electrode is a light-reflective metal electrode. 6. The switching element is provided on the first substrate, the switching element is covered with an insulating layer, and pixel electrodes made of a light-reflective metal electrode are formed in a matrix on the insulating layer. The switching element and the pixel electrode are connected via a connection conductor provided in a contact hole formed in the insulating layer, and an alignment film is provided to cover the pixel electrode. The liquid crystal device according to claim 1. 7. A projection display device comprising the liquid crystal device according to claim 1. 8. A light modulation device comprising: a light source; a light modulation device for modulating light from the light source; and a projection lens for projecting light modulated by the light modulation device, wherein the light modulation device is provided. A projection type display device, wherein the liquid crystal device according to any one of the above is used. 9. An electronic apparatus comprising the liquid crystal device according to claim 1.