JP2001202604A - Magneto-resistive head and magnetic recording and reproducing device - Google Patents
Magneto-resistive head and magnetic recording and reproducing deviceInfo
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- JP2001202604A JP2001202604A JP2000008172A JP2000008172A JP2001202604A JP 2001202604 A JP2001202604 A JP 2001202604A JP 2000008172 A JP2000008172 A JP 2000008172A JP 2000008172 A JP2000008172 A JP 2000008172A JP 2001202604 A JP2001202604 A JP 2001202604A
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- ferromagnetic
- head
- magnetoresistive
- tmr
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気的に記録され
た情報を再生する強磁性トンネル型磁気抵抗効果ヘッ
ド、及び磁気再生ヘッドとしてその強磁性トンネル型磁
気抵抗効果ヘッドを備えた高密度磁気記録再生装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferromagnetic tunnel type magnetoresistive head for reproducing magnetically recorded information, and a high-density magnetic field provided with the ferromagnetic tunnel type magnetoresistive head as a magnetic reproducing head. The present invention relates to a recording and reproducing device.
【０００２】[0002]
【従来の技術】高密度磁気記録再生装置に用いられる磁
気ヘッドの再生部には巨大磁気抵抗効果（ＧＭＲ）素子
が提案されており、その一つとしてスピンバルブ膜と呼
ばれる構造が特開平４−３５８３１０号公報に記載され
ている。また、今後の更なる高密度磁気記録に対応する
磁気ヘッド再生部としては、ＧＭＲ素子よりも高出力で
ある強磁性トンネル型磁気抵抗効果（ＴＭＲ）素子が提
案され、特開平１０−４２２７号公報にＴＭＲ素子を用
いた磁気ヘッドに関する記載がある。2. Description of the Related Art A giant magnetoresistive (GMR) element has been proposed for a reproducing section of a magnetic head used in a high-density magnetic recording / reproducing apparatus. 358310. Further, as a magnetic head reproducing unit corresponding to a higher density magnetic recording in the future, a ferromagnetic tunnel type magnetoresistive (TMR) element having a higher output than a GMR element has been proposed. Describes a magnetic head using a TMR element.
【０００３】しかし、従来のＴＭＲ素子においてはその
磁気抵抗効果の大きさに限界があり、さらなる高出力Ｔ
ＭＲ素子を実現するためには新規な機能を持つ磁気抵抗
効果素子が必要である。その一つの手段として、従来の
ＴＭＲ素子に用いられる強磁性体よりも高スピン偏極率
を持つ材料の適用がある。ユーロフィジックス・レター
ズ誌３９巻５４５〜５４９頁（EUROPHYSICS LETTERS,39
(5), pp545-549 (1997)）には高スピン偏極率材料を用
いたＴＭＲ素子（Ｌａ0.7Ｓｒ0.3ＭｎＯ3／ＳｒＴｉＯ3
／Ｌａ0.7Ｓｒ0.3ＭｎＯ3）におけるＴＭＲ比の増大に
関する記述がある。However, in the conventional TMR element, the magnitude of the magnetoresistance effect is limited, and the higher output T
To realize the MR element, a magnetoresistive element having a new function is required. One means is to use a material having a higher spin polarization than a ferromagnetic material used in a conventional TMR element. Europhysics Letters, Vol. 39, pp. 545-549 (EUROPHYSICS LETTERS, 39
(5), pp545-549 (1997)), a TMR element (La 0.7 Sr 0.3 MnO 3 / SrTiO 3 ) using a high spin polarization material.
/ La 0.7 Sr 0.3 MnO 3 ).
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記のように
高スピン偏極率材料を直接ＴＭＲ素子の感磁部に用いた
場合、素子の抵抗がメガオーム以上と非常に高く、磁気
ヘッドとして利用する時にノイズの原因となり不適であ
る。また、記録密度の十分に高い磁気記録再生装置を実
現するために、従来構造より高出力な強磁性トンネル型
磁気抵抗効果素子を実現する必要がある。However, when a high spin polarization material is directly used for the magnetic sensing part of the TMR element as described above, the element has a very high resistance of megaohms or more, and is used as a magnetic head. Sometimes it causes noise and is not suitable. Further, in order to realize a magnetic recording / reproducing apparatus having a sufficiently high recording density, it is necessary to realize a ferromagnetic tunnel type magnetoresistance effect element having a higher output than the conventional structure.
【０００５】本発明の目的は、従来構造より高出力な強
磁性トンネル型磁気抵抗効果素子を提供することにあ
る。本発明の他の目的は、その強磁性トンネル磁気抵抗
効果素子を用いた磁気抵抗効果型磁気ヘッド及び磁気記
録再生装置を提供することにある。An object of the present invention is to provide a ferromagnetic tunnel type magnetoresistance effect element having a higher output than the conventional structure. Another object of the present invention is to provide a magneto-resistance effect type magnetic head and a magnetic recording / reproducing apparatus using the ferromagnetic tunnel magneto-resistance effect element.
【０００６】[0006]
【課題を解決するための手段】電子のスピン偏極率
（Ｐ）は、回転（自転）方向の異なる電子（右回りと左
回りで右回りが下向きスピン、左回りが上向きスピン）
の数（状態密度）の差で一般的に理解されている。例え
ばスピン偏極率Ｐ＝０．８は上向きスピンが下向きスピ
ンよりも９倍多いことを示す。また、ＴＭＲ素子の磁気
抵抗効果（ＴＭＲ比）は、この偏極率Ｐを用いて２Ｐ1
Ｐ2／（１−Ｐ1Ｐ2）で表すことができる（Ｐ 1はＴＭＲ
素子の強磁性自由層のスピン偏極率、Ｐ2はＴＭＲ素子
の強磁性固定層のスピン偏極率）。よって、高いＴＭＲ
比を得るためには、Ｐの大きい高スピン偏極率材料であ
る半金属強磁性体（Ｆｅ3Ｏ4，ＣｒＯ2等）を用いるこ
とが有効である。これらの半金属強磁性体の電気伝導を
担う電子は自由電子ではなく、エネルギー準位が分裂し
たｄ軌道バンドの電子であり、伝導を主に担うフェルミ
エネルギー近傍の電子の状態はどちらか一方の向きの電
子の数が多い、つまり、高スピン偏極した電子である。[Means for Solving the Problems] Spin polarization of electrons
(P) indicates electrons with different rotation (rotation) directions (clockwise and left
(Rotate clockwise spin downward, counterclockwise spin upward)
Is generally understood as the difference in the number of states (state density). example
If the spin polarization P = 0.8, the upward spin is
9 times more than Also, the magnetic properties of the TMR element
The resistance effect (TMR ratio) is calculated as 2P using this polarization rate P.1
PTwo/ (1-P1PTwo) (P 1Is TMR
Spin polarization of the ferromagnetic free layer of the device, PTwoIs the TMR element
Spin polarization of the ferromagnetic pinned layer). Therefore, high TMR
In order to obtain the ratio, a high spin polarization material having a large P is used.
Metalloid ferromagnet (FeThreeOFour, CrOTwoEtc.)
Is valid. The electric conduction of these semimetallic ferromagnet
Carrying electrons are not free electrons, their energy levels are split
Fermi, which is an electron in the d-orbital band and is mainly responsible for conduction
The state of the electrons near the energy is the one in either direction.
An electron with a large number of electrons, that is, a highly spin-polarized electron.
【０００７】本発明では、ＴＭＲ素子に半金属強磁性体
層を隣接させて、半金属強磁性体層（高偏極スピン注入
層）からＴＭＲ素子側に電流を流し、高スピン偏極した
電子をＴＭＲ素子に流し込むことによって、ＴＭＲ比の
定義中の強磁性自由層のスピン偏極率Ｐ1を増大させ、
磁気抵抗効果をエンハンスさせる。前記高偏極スピン注
入層には一つの電流の導入端子を備え、電流を流しＴＭ
Ｒ素子に導入する。一方、ＴＭＲ素子の磁気抵抗効果は
従来どおり強磁性自由層と強磁性固定層間の抵抗変化率
とする。このような構成を採用することにより、高偏極
スピン注入層の電気抵抗はＴＭＲ素子の電気抵抗に関与
せず、磁気ヘッド適用に関してノイズ原因となる高抵抗
化を回避することができる。According to the present invention, a semi-metallic ferromagnetic layer is placed adjacent to a TMR element, and a current flows from the semi-metallic ferromagnetic layer (highly polarized spin injection layer) to the TMR element side, whereby electrons having a high spin polarization are formed. Into the TMR element to increase the spin polarization P 1 of the ferromagnetic free layer in the definition of the TMR ratio,
Enhances the magnetoresistance effect. The highly polarized spin injection layer is provided with one current introduction terminal,
Introduce to R element. On the other hand, the magnetoresistance effect of the TMR element is defined as the resistance change rate between the ferromagnetic free layer and the ferromagnetic fixed layer as in the related art. By adopting such a configuration, the electric resistance of the highly polarized spin injection layer does not contribute to the electric resistance of the TMR element, and it is possible to avoid the increase in the resistance that causes noise in application of the magnetic head.
【０００８】すなわち、本発明による磁気抵抗効果ヘッ
ドは、磁気抵抗効果膜と前記磁気抵抗効果膜の膜厚方向
に電流を流すための電極を備えた磁気抵抗効果ヘッドに
おいて、磁気抵抗効果膜は強磁性自由層、絶縁障壁層、
強磁性固定層及び反強磁性層を含む強磁性トンネル型磁
気抵抗効果膜であり、高偏極スピン注入層が強磁性自由
層に隣接して設けられていることを特徴とする。That is, a magnetoresistive head according to the present invention comprises a magnetoresistive film and electrodes for flowing a current in the thickness direction of the magnetoresistive film. Magnetic free layer, insulating barrier layer,
A ferromagnetic tunnel type magnetoresistive film including a ferromagnetic pinned layer and an antiferromagnetic layer, wherein a highly polarized spin injection layer is provided adjacent to the ferromagnetic free layer.
【０００９】本発明による磁気抵抗効果ヘッドは、ま
た、磁気抵抗効果膜と前記磁気抵抗効果膜の膜厚方向に
電流を流すための電極を備えた磁気抵抗効果ヘッドにお
いて、磁気抵抗効果膜は強磁性自由層、絶縁障壁層、強
磁性固定層及び反強磁性層を含む強磁性トンネル型磁気
抵抗効果膜であり、高偏極スピン注入層が強磁性自由層
に絶縁層を介して隣接して設けられていることを特徴と
する。A magnetoresistive head according to the present invention comprises a magnetoresistive film and an electrode for flowing a current in the thickness direction of the magnetoresistive film. A ferromagnetic tunneling magnetoresistive film including a magnetic free layer, an insulating barrier layer, a ferromagnetic pinned layer, and an antiferromagnetic layer, wherein a highly polarized spin injection layer is adjacent to the ferromagnetic free layer via an insulating layer. It is characterized by being provided.
【００１０】本発明による磁気抵抗効果ヘッドは、ま
た、磁気抵抗効果膜と前記磁気抵抗効果膜の膜厚方向に
電流を流すための電極を備えた磁気抵抗効果ヘッドにお
いて、磁気抵抗効果膜は強磁性自由層、絶縁障壁層、強
磁性固定層及び反強磁性層を含む強磁性トンネル型磁気
抵抗効果膜であり、高偏極スピン注入層が強磁性自由層
に絶縁層及び非磁性中間層を介して隣接して設けられて
いることを特徴とする。絶縁層と非磁性中間層は、絶縁
層を高偏極スピン注入層側設けてもよいし、非磁性中間
層を高偏極スピン注入層側に設けてもよい。あるいは、
２層の非磁性中間層で絶縁層を挟むようにして絶縁層と
非磁性中間層を設けてもよい。A magnetoresistive head according to the present invention comprises a magnetoresistive film and an electrode for flowing a current in the thickness direction of the magnetoresistive film. A ferromagnetic tunneling type magnetoresistive film including a magnetic free layer, an insulating barrier layer, a ferromagnetic pinned layer, and an antiferromagnetic layer. A highly polarized spin injection layer includes an insulating layer and a nonmagnetic intermediate layer as a ferromagnetic free layer. It is characterized in that it is provided adjacently with an interposition therebetween. Regarding the insulating layer and the non-magnetic intermediate layer, the insulating layer may be provided on the side of the highly polarized spin injection layer, or the non-magnetic intermediate layer may be provided on the side of the highly polarized spin injection layer. Or,
The insulating layer and the nonmagnetic intermediate layer may be provided so as to sandwich the insulating layer between two nonmagnetic intermediate layers.
【００１１】高偏極スピン注入層は配向制御膜上に形成
するのが好ましい。ここで、高偏極スピン注入層はＦ
ｅ，ＣｏあるいはＭｎを含む酸化物あるいは化合物とす
ることができる。絶縁層はＡｌ，Ｍｇ，Ｔｉ，Ｔａ，Ｈ
ｆ，Ｎｂ，Ｍｏ，Ｃｒ，ＧａあるいはＡｓの少なくとも
一つを含む酸化物あるいは化合物で構成することができ
る。また、配向制御膜はＮｉ，Ｚｒ，Ｚｎ，Ａｌ，Ｍ
ｇ，Ｔｉ，Ｔａ，Ｈｆ，Ｎｂ，Ｍｏ，ＣｒあるいはＣｏ
の少なくとも一つを含む酸化物あるいは化合物とするこ
とができる。The highly polarized spin injection layer is preferably formed on the orientation control film. Here, the highly polarized spin injection layer is F
An oxide or compound containing e, Co or Mn can be used. The insulating layer is made of Al, Mg, Ti, Ta, H
It can be composed of an oxide or a compound containing at least one of f, Nb, Mo, Cr, Ga and As. The orientation control film is made of Ni, Zr, Zn, Al, M
g, Ti, Ta, Hf, Nb, Mo, Cr or Co
Or an oxide containing at least one of the following.
【００１２】本発明による磁気記録再生装置は、磁気記
録媒体と、磁気記録媒体を駆動する記録媒体駆動手段
と、記録部と再生部とを備える磁気ヘッドと、磁気ヘッ
ドを駆動する磁気ヘッド駆動手段とを含む磁気記録再生
装置において、磁気ヘッドの再生部として前述の磁気抵
抗効果ヘッドを用いたことを特徴とする。A magnetic recording / reproducing apparatus according to the present invention comprises: a magnetic recording medium; a recording medium driving unit for driving the magnetic recording medium; a magnetic head including a recording unit and a reproducing unit; and a magnetic head driving unit for driving the magnetic head. In the magnetic recording / reproducing apparatus including the above, the above-described magnetoresistive head is used as a reproducing section of the magnetic head.
【００１３】[0013]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。 ［実施の形態１］図１は、本発明による強磁性トンネル
型磁気抵抗効果素子の第一の構成例を示す断面模式図で
ある。Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIG. 1 is a schematic sectional view showing a first configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【００１４】基体５０上に高偏極スピン注入層１１が形
成されており、それに隣接して強磁性トンネル型磁気抵
抗効果（ＴＭＲ）素子１が配置されている。ＴＭＲ素子
１は基体側から順に強磁性自由層１２、絶縁障壁層１
３、強磁性固定層１４、反強磁性層１５を積層してな
り、強磁性自由層１２と強磁性固定層１４の面内磁化は
外部磁界が印加されていない状態で相互に約９０°傾い
た方向に向けられている。外部磁界（Ｈ）により強磁性
自由層１２の磁化は自由に回転し、その回転角に応じて
膜面垂直方向の電気抵抗が変化し磁気抵抗効果が発生す
る。ＴＭＲ素子１の端部には、強磁性自由層１２と強磁
性固定層１４の間の電気的なリークを阻止するために層
間絶縁層２５が形成されている。A highly polarized spin injection layer 11 is formed on a substrate 50, and a ferromagnetic tunnel type magnetoresistive (TMR) element 1 is arranged adjacent to the spin injection layer. The TMR element 1 has a ferromagnetic free layer 12, an insulating barrier layer 1
3. The ferromagnetic fixed layer 14 and the antiferromagnetic layer 15 are laminated, and the in-plane magnetizations of the ferromagnetic free layer 12 and the ferromagnetic fixed layer 14 are tilted by about 90 ° with each other in a state where no external magnetic field is applied. Is oriented in the right direction. The magnetization of the ferromagnetic free layer 12 is freely rotated by the external magnetic field (H), and the electrical resistance in the direction perpendicular to the film surface changes according to the rotation angle, thereby generating a magnetoresistance effect. At the end of the TMR element 1, an interlayer insulating layer 25 is formed to prevent electrical leakage between the ferromagnetic free layer 12 and the ferromagnetic fixed layer 14.
【００１５】電極２１は反強磁性層１５上、電極２２は
強磁性自由層１２上、電極２４は高偏極スピン注入層１
１上にそれぞれ配置され、電極２１、２２間に電流を流
し、その間の抵抗変化率をＴＭＲ素子１の出力とする。
また、それとは別に電極２４から電極２１に電流を流す
ことで、高偏極スピン注入層１１からその高スピン偏極
した伝導電子がＴＭＲ素子１へ流れ込む。The electrode 21 is on the antiferromagnetic layer 15, the electrode 22 is on the ferromagnetic free layer 12, and the electrode 24 is on the highly polarized spin injection layer 1.
The current is applied between the electrodes 21 and 22 and the rate of change in resistance between the electrodes 21 and 22 is used as the output of the TMR element 1.
Separately, by passing a current from the electrode 24 to the electrode 21, the highly spin-polarized conduction electrons flow from the highly polarized spin injection layer 11 into the TMR element 1.
【００１６】次に、上記磁気抵抗効果センサーの作製方
法と各種材料について説明する。Ｓｉ基体５０上に、高
偏極スピン注入層１１であるＦｅ3Ｏ4を５０ｎｍの厚さ
にｒｆスパッタリングにより形成し、所定の形状にパタ
ーニングする。次に、フォトレジストを塗布し、フォト
リソグラフィーを用いて規定の形状にリフトオフパター
ンを形成した後、強磁性自由層１２であるＣｏＦｅを５
ｎｍ、絶縁障壁層１３を形成するためのＡｌを１ｎｍ形
成する。この金属Ａｌを１０Ｔｏｒｒの酸素雰囲気中で
２０分間自然酸化させた。その後、強磁性固定層１４の
ＣｏＦｅを２ｎｍ、反強磁性層１５のＩｒＭｎを８ｎ
ｍ、保護膜２３であるＴａを５ｎｍの厚さにｒｆスパッ
タリングにより順次積層し、リフトオフする。その後、
フォトリソグラフィー、イオンミリングを用いて強磁性
自由層１２まで接合部のパターニングを行う。作製した
接合部の面積は５×５（μｍ2）である。次に、層間絶
縁層２５であるＳｉＯ2を１５ｎｍ形成し、レジストを
リフトオフする。その後、電極２２、２４であるＡｕを
フォトリソグラフィーとイオンミリングにより配置する
ためのフォトレジストパターンを形成後、電極Ａｕを５
ｎｍ厚にｒｆスパッタリングにより形成し、電極２１を
所定の形状に、電極２２は強磁性自由層１２上に電極２
４は高偏極スピン注入層１１上に配置するように加工し
て、磁気抵抗効果センサーを作製する。Next, a method of manufacturing the above-described magnetoresistive effect sensor and various materials will be described. On the Si substrate 50, Fe 3 O 4 as the highly polarized spin injection layer 11 is formed to a thickness of 50 nm by rf sputtering and patterned into a predetermined shape. Next, a photoresist is applied, and a lift-off pattern is formed in a prescribed shape using photolithography.
1 nm of Al for forming the insulating barrier layer 13 is formed. This metal Al was naturally oxidized in an oxygen atmosphere of 10 Torr for 20 minutes. Thereafter, CoFe of the ferromagnetic fixed layer 14 was 2 nm, and IrMn of the antiferromagnetic layer 15 was 8 n.
m, Ta, which is the protective film 23, is sequentially laminated to a thickness of 5 nm by rf sputtering, and lift-off is performed. afterwards,
The junction is patterned up to the ferromagnetic free layer 12 using photolithography and ion milling. The area of the fabricated joint is 5 × 5 (μm 2 ). Next, 15 nm of SiO 2 as the interlayer insulating layer 25 is formed, and the resist is lifted off. Then, after forming a photoresist pattern for disposing Au as the electrodes 22 and 24 by photolithography and ion milling, the electrode Au is
The electrode 21 is formed in a predetermined shape by rf sputtering, and the electrode 22 is formed on the ferromagnetic free layer 12 by the rf sputtering.
4 is processed so as to be disposed on the highly polarized spin injection layer 11 to produce a magnetoresistive sensor.
【００１７】ここで、上記高偏極スピン注入層を備えた
ＴＭＲ素子において得られた結果を述べる。上記ＴＭＲ
素子１に流す電流、つまり電極２２から電極２１の間に
流す電流をＩTMR（Ａ）、高偏極スピン注入層１１から
ＴＭＲ素子１に流す電流、つまり電極２４から電極２１
に流す電流をＩinj（Ａ）とすると、ＩTMR／Ｉinj＝１
のときＴＭＲ素子１の抵抗変化率を測定したところ、室
温において最大５５％のＴＭＲ比が観測された。Here, the results obtained in the TMR element having the above-mentioned highly polarized spin injection layer will be described. The above TMR
The current flowing through the element 1, that is, the current flowing between the electrode 22 and the electrode 21 is I TMR (A), and the current flowing from the highly polarized spin injection layer 11 to the TMR element 1, that is, the electrode 24 through the electrode 21
Let I inj (A) be the current flowing through I TMR / I inj = 1
When the resistance change rate of the TMR element 1 was measured at this time, a maximum TMR ratio of 55% was observed at room temperature.
【００１８】強磁性トンネル型磁気抵抗効果のＭＲ比
は、強磁性自由層１２のスピン偏極率（Ｐ1）、強磁性
固定層１４のスピン偏極率（Ｐ2）を用いて次の〔数
１〕で与えられる。The MR ratio of the ferromagnetic tunnel magnetoresistive effect, spin polarization of the ferromagnetic free layer 12 (P 1), the following using the spin polarization of the ferromagnetic pinned layer 14 (P 2) [ Equation 1].
【００１９】[0019]
【数１】 (Equation 1)
【００２０】強磁性自由層１２及び強磁性固定層にＣｏ
Ｆｅを用いたときＣｏＦｅのスピン偏極率はＰ1＝Ｐ2＝
０．３４であるから、ＴＭＲ比は２６％である。つま
り、高偏極スピン注入層１１が無い場合のＴＭＲ比は２
６％である。よって、本実施の形態のように、高偏極ス
ピン注入層１１からＴＭＲ素子１に高スピン偏極電子を
注入することにより、ＴＭＲ比を２倍以上増大させるこ
とができる。Co is used as the ferromagnetic free layer 12 and the ferromagnetic pinned layer.
When Fe is used, the spin polarization of CoFe is P 1 = P 2 =
Since it is 0.34, the TMR ratio is 26%. That is, the TMR ratio without the highly polarized spin injection layer 11 is 2
6%. Therefore, by injecting highly spin-polarized electrons from the highly polarized spin injection layer 11 into the TMR element 1 as in the present embodiment, the TMR ratio can be increased by a factor of two or more.
【００２１】本実施の形態ではＴＭＲ素子１の強磁性自
由層１２及び強磁性固定層１４にＣｏＦｅを用いたが、
ＮｉＦｅあるいはＣｏＦｅとＮｉＦｅの多層膜（ＣｏＦ
ｅ／ＮｉＦｅ）あるいはＣｏＦｅ／Ｒｕ／ＣｏＦｅを用
いてもよい。また、本実施の形態では絶縁障壁層１３に
Ａｌの自然酸化膜を用いたが、Ａｌの酸化方法はプラズ
マ強制酸化あるいはＡｌ2Ｏ3の直接堆積でも構わない。
また、絶縁障壁層１３の材料はＭｇＯ，ＳｒＴｉＯ3，
ＨｆＯ2，ＴａＯ，ＮｂＯ，ＭｏＯであってもよい。In this embodiment, CoFe is used for the ferromagnetic free layer 12 and the ferromagnetic fixed layer 14 of the TMR element 1.
NiFe or a multilayer film of CoFe and NiFe (CoF
e / NiFe) or CoFe / Ru / CoFe may be used. In the present embodiment, a natural oxide film of Al is used for the insulating barrier layer 13, but the method of oxidizing Al may be plasma forced oxidation or direct deposition of Al 2 O 3 .
The material of the insulating barrier layer 13 is MgO, SrTiO 3 ,
HfO 2 , TaO, NbO, MoO may be used.
【００２２】さらに、上記高偏極スピン注入層として、
Ｓｒ2ＦｅＭｏＯ7，Ｌａ0.7Ｓｒ0.3ＭｎＯ3，ＭｎＳ
ｂ，ＣｒＯ2を用いてほぼ同様の結果が得られ、それぞ
れの材料を用いたときのＴＭＲ比は５３％，５１％，４
５％，５５％であった。Further, as the highly polarized spin injection layer,
Sr 2 FeMoO 7 , La 0.7 Sr 0.3 MnO 3 , MnS
Almost the same results were obtained using b and CrO 2, and the TMR ratio when using each material was 53%, 51%, 4%.
5% and 55%.
【００２３】［実施の形態２］図２は、本発明による強
磁性トンネル型磁気抵抗効果素子の第２の構成例を示す
断面模式図である。図２に示す構成は、図１の構成にお
いて高偏極スピン注入層１１と強磁性自由層１２の間に
絶縁層１１１を備えたものに相当する。[Embodiment 2] FIG. 2 is a schematic sectional view showing a second example of the structure of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 2 corresponds to the configuration shown in FIG. 1 in which an insulating layer 111 is provided between the highly polarized spin injection layer 11 and the ferromagnetic free layer 12.
【００２４】絶縁層１１１にはＭｇＯを用い、その膜厚
は２ｎｍとした。素子作製工程は実施の形態１と同様で
あり、電極の配置及び抵抗変化率の測定方法も実施の形
態１と同様である。The insulating layer 111 is made of MgO and has a thickness of 2 nm. The element manufacturing process is the same as in Embodiment 1, and the arrangement of the electrodes and the method of measuring the rate of change in resistance are also the same as in Embodiment 1.
【００２５】高偏極スピン注入層１１からＴＭＲ素子１
への高スピン偏極電子の注入は、絶縁層１１１の障壁エ
ネルギーを超えてトンネル伝導による。前記手段により
フェルミエネルギー近傍の電子のみＴＭＲ素子側へ流れ
込み、つまりは注入されるスピンの向きの選択できる。
その結果、ＴＭＲに寄与しない電子の数を減らすことが
でき、ＴＭＲの効率を上げることができる。注入される
スピンの向きは、強磁性層１２のＣｏＦｅの多数スピン
と同方向の上向きスピンである。このことにより、上向
きの状態をもつ電子の数が増大し、ＴＭＲに寄与する電
子のスピン偏極率が増大する。From the highly polarized spin injection layer 11 to the TMR element 1
The high spin-polarized electrons are injected into the insulating layer 111 by tunnel conduction exceeding the barrier energy of the insulating layer 111. By the above means, only electrons near the Fermi energy flow into the TMR element side, that is, the direction of the injected spin can be selected.
As a result, the number of electrons that do not contribute to TMR can be reduced, and the efficiency of TMR can be increased. The direction of the injected spin is an upward spin in the same direction as the majority spin of CoFe in the ferromagnetic layer 12. As a result, the number of electrons having an upward state increases, and the spin polarization of electrons contributing to TMR increases.
【００２６】図１４は、本実施の形態の素子において、
電極２２から電極２１に流す電流をＩTMR、電極２４か
ら電極２１に流す電流をＩinjとし、その比Ｉinj／Ｉ
TMRに対してＴＭＲ比をプロットした図である。本実施
の形態において得られたＴＭＲ比は６０％（Ｉinj／Ｉ
TMR＝１）であり、実施の形態１に比べ増大した。FIG. 14 shows a device according to this embodiment.
The current flowing from the electrode 22 to the electrode 21 is I TMR , the current flowing from the electrode 24 to the electrode 21 is I inj , and the ratio I inj / I
It is a plot of TMR ratio to TMR. The TMR ratio obtained in the present embodiment is 60% (I inj / I
TMR = 1), which is larger than in the first embodiment.
【００２７】［実施の形態３］図３は、本発明による強
磁性トンネル型磁気抵抗効果素子の第３の構成例を示す
断面模式図である。図３に示した構成は、図２の構成に
おいて絶縁層１１１と強磁性自由層１２の間に非磁性中
間層１１２を備えたものに相当する。[Embodiment 3] FIG. 3 is a schematic sectional view showing a third configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 3 corresponds to the configuration shown in FIG. 2 in which a nonmagnetic intermediate layer 112 is provided between the insulating layer 111 and the ferromagnetic free layer 12.
【００２８】非磁性中間層１１２にはＣｕを用い、その
膜厚は２ｎｍとした。非磁性中間層１１２は電子のスピ
ン拡散長を有効に拡張でき、高偏極スピン電子の散乱を
抑える機能をもつと同時に絶縁層１１１からＴＭＲ素子
１への酸素の拡散を防ぎ高偏極スピン注入効果の低減を
抑制することができ、ＴＭＲ比を増大させることができ
る。The non-magnetic intermediate layer 112 was made of Cu and had a thickness of 2 nm. The nonmagnetic intermediate layer 112 can effectively extend the electron spin diffusion length, and has a function of suppressing scattering of highly polarized spin electrons, and at the same time, prevents diffusion of oxygen from the insulating layer 111 to the TMR element 1 and highly polarized spin injection. Reduction of the effect can be suppressed, and the TMR ratio can be increased.
【００２９】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は５２％であった。同様の効果は、非磁性中間層１１
２としてＣｕの代わりに伝導率の高いＡｕ，Ｐｄ，Ａ
ｇ，Ａｌを用いた場合においても観測された。The device fabrication process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the rate of change in resistance are also the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was 52%. A similar effect can be obtained with the nonmagnetic intermediate layer 11.
Au, Pd, A with high conductivity instead of Cu
g and Al were also observed.
【００３０】［実施の形態４］図４は、本発明による強
磁性トンネル型磁気抵抗効果素子の第４の構成例を示す
断面模式図である。図４に示した構成は、図２の構成に
おいて絶縁層１１１と高偏極スピン注入層１１の間に非
磁性中間層１１２を備えたものに相当する。[Fourth Embodiment] FIG. 4 is a schematic sectional view showing a fourth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 4 corresponds to the configuration shown in FIG. 2 in which a non-magnetic intermediate layer 112 is provided between the insulating layer 111 and the highly polarized spin injection layer 11.
【００３１】非磁性中間層１１２にはＣｕを用い、その
膜厚は２ｎｍとした。非磁性中間層１１２は電子のスピ
ン拡散長を有効に拡張でき、高偏極スピン電子の散乱を
抑える機能をもつと同時に絶縁層１１１から高偏極スピ
ン注入層１１への酸素の拡散を防ぎ高偏極スピン注入効
果の低減を抑制することができ、ＴＭＲ比を増大させる
ことができる。The non-magnetic intermediate layer 112 was made of Cu and had a thickness of 2 nm. The nonmagnetic intermediate layer 112 can effectively extend the spin diffusion length of electrons, and has a function of suppressing the scattering of highly polarized spin electrons, and at the same time, prevents diffusion of oxygen from the insulating layer 111 to the highly polarized spin injection layer 11 to prevent the diffusion. It is possible to suppress the reduction of the polarized spin injection effect and increase the TMR ratio.
【００３２】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は５０％であった。同様の効果は、非磁性中間層１１
２としてＣｕの代わりに伝導率の高いＡｕ，Ｐｄ，Ａ
ｇ，Ａｌを用いた場合においても観測された。The device manufacturing process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the rate of change in resistance are also the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was 50%. A similar effect can be obtained with the nonmagnetic intermediate layer 11.
Au, Pd, A with high conductivity instead of Cu
g and Al were also observed.
【００３３】［実施の形態５］図５は、本発明による強
磁性トンネル型磁気抵抗効果素子の第５の構成例を示す
断面模式図である。図５に示した構成は、図２の構成に
おいて強磁性自由層１２と絶縁層１１１の間に非磁性中
間層１１２を、さらに絶縁層１１１と高偏極スピン注入
層１１の間に非磁性中間層１１４を備えたものに相当す
る。[Fifth Embodiment] FIG. 5 is a schematic sectional view showing a fifth configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 5 is different from the configuration shown in FIG. 2 in that a nonmagnetic intermediate layer 112 is provided between the ferromagnetic free layer 12 and the insulating layer 111 and a nonmagnetic intermediate layer 112 is provided between the insulating layer 111 and the highly polarized spin injection layer 11. It corresponds to the one provided with the layer 114.
【００３４】非磁性中間層１１２にはＣｕを用い、その
膜厚は２ｎｍとした。非磁性中間層１１２は電子のスピ
ン拡散長を有効に拡張でき、高偏極スピン電子の散乱を
抑える機能をもつと同時に絶縁層１１１からＴＭＲ素子
１と高偏極スピン注入層１１への酸素の拡散を防ぎ高偏
極スピン注入効果の低減を抑制することができ、ＴＭＲ
比を増大させることができる。The nonmagnetic intermediate layer 112 was made of Cu and had a thickness of 2 nm. The non-magnetic intermediate layer 112 can effectively extend the electron spin diffusion length and suppress the scattering of highly polarized spin electrons, and at the same time, transfer oxygen from the insulating layer 111 to the TMR element 1 and the highly polarized spin injection layer 11. Diffusion can be prevented and the reduction of the highly polarized spin injection effect can be suppressed.
The ratio can be increased.
【００３５】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は同様５１％であった。同様の効果は、非磁性中間層
１１２としてＣｕの代わりに伝導率の高いＡｕ，Ｐｄ，
Ａｇ，Ａｌにおいても観測された。The device manufacturing process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the resistance change rate are the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was also 51%. A similar effect is obtained by using Au, Pd, or the like having high conductivity instead of Cu as the nonmagnetic intermediate layer 112.
Ag and Al were also observed.
【００３６】［実施の形態６］図６は、本発明による強
磁性トンネル型磁気抵抗効果素子の第６の構成例を示す
断面模式図である。図６に示した構成は、図１の構成に
おいて基体５０と高偏極スピン注入層の間に配向制御膜
２０を備えたものに相当する。[Embodiment 6] FIG. 6 is a schematic sectional view showing a sixth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 6 corresponds to the configuration shown in FIG. 1 in which the orientation control film 20 is provided between the base 50 and the highly polarized spin injection layer.
【００３７】配向制御膜２０には、ＮｉＯを用いてその
膜厚は５０ｎｍとした。配向制御膜２０は、高偏極スピ
ン注入層１１の膜を配向させることによって磁気的な異
方性をもたせ磁区制御させ、磁気特性を向上させる。ま
た、高偏極スピン注入層１１のある特定のフェルミ面を
強磁性層１２との界面に出すことにより、上向きスピン
の数の多い高偏極した電子がＴＭＲ素子側に流れるよう
にすることができる。The orientation control film 20 was made of NiO and had a thickness of 50 nm. The orientation control film 20 imparts magnetic anisotropy by controlling the orientation of the film of the highly polarized spin injection layer 11 to control magnetic domains, thereby improving magnetic properties. Also, by setting a specific Fermi surface of the highly polarized spin injection layer 11 at the interface with the ferromagnetic layer 12, highly polarized electrons having a large number of upward spins can flow toward the TMR element. it can.
【００３８】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は６２％であった。The element manufacturing process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the resistance change rate are the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was 62%.
【００３９】［実施の形態７］図７は、本発明による強
磁性トンネル型磁気抵抗効果素子の第７の構成例を示す
断面模式図である。図７に示した構成は、図２の構成に
おいて基体５０と高偏極スピン注入層の間に配向制御膜
２０を備えたものに相当する。[Embodiment 7] FIG. 7 is a schematic sectional view showing a seventh configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 7 corresponds to the configuration shown in FIG. 2 in which the orientation control film 20 is provided between the base 50 and the highly polarized spin injection layer.
【００４０】配向制御膜２０には、ＮｉＯを用いてその
膜厚は５０ｎｍとした。配向制御膜２０は、高偏極スピ
ン注入層１１の膜を配向させることによって磁気的な異
方性をもたせ磁区制御させ、磁気特性を向上させる。ま
た、高偏極スピン注入層１１のある特定のフェルミ面を
強磁性層１２との界面に出すことにより、上向きスピン
の数の多い高偏極した電子がＴＭＲ素子側に流れるよう
にすることができる。The orientation control film 20 was made of NiO and had a thickness of 50 nm. The orientation control film 20 imparts magnetic anisotropy by controlling the orientation of the film of the highly polarized spin injection layer 11 to control magnetic domains, thereby improving magnetic properties. Also, by setting a specific Fermi surface of the highly polarized spin injection layer 11 at the interface with the ferromagnetic layer 12, highly polarized electrons having a large number of upward spins can flow toward the TMR element. it can.
【００４１】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。図１５は、本実施の形態の素子におい
て、電極２２から電極２１に流す電流をＩTMR、電極２
４から電極２１に流す電流をＩinjとし、その比Ｉinj／
ＩTMRに対してＴＭＲ比をプロットした図である。本実
施の形態において得られたＴＭＲ比は６５％（Ｉinj／
ＩTMR＝１）であり、実施の形態１に比べ増大した。The device fabrication process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the resistance change rate are the same as in the first embodiment. FIG. 15 shows that the current flowing from the electrode 22 to the electrode 21 is I TMR ,
The current flowing from 4 to the electrode 21 is defined as I inj , and the ratio I inj /
It is the figure which plotted the TMR ratio with respect to I TMR . The TMR ratio obtained in the present embodiment is 65% (I inj /
I TMR = 1), which is larger than in the first embodiment.
【００４２】［実施の形態８］図８は、本発明による強
磁性トンネル型磁気抵抗効果素子の第８の構成例を示す
断面模式図である。図８に示した構成は、図３の構成に
おいて基体５０と高偏極スピン注入層の間に配向制御膜
２０を備えたものに相当する。[Eighth Embodiment] FIG. 8 is a schematic sectional view showing an eighth configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 8 corresponds to the configuration shown in FIG. 3 in which the orientation control film 20 is provided between the base 50 and the highly polarized spin injection layer.
【００４３】配向制御膜２０には、ＮｉＯを用いてその
膜厚は５０ｎｍとした。配向制御膜２０は、高偏極スピ
ン注入層１１の膜を配向させることによって磁気的な異
方性をもたせ磁区制御させ、磁気特性を向上させる。ま
た、高偏極スピン注入層１１のある特定のフェルミ面を
強磁性層１２との界面に出すことにより、上向きスピン
の数の多い高偏極した電子がＴＭＲ素子側に流れるよう
にすることができる。The orientation control film 20 was made of NiO and had a thickness of 50 nm. The orientation control film 20 imparts magnetic anisotropy by controlling the orientation of the film of the highly polarized spin injection layer 11 to control magnetic domains, thereby improving magnetic properties. Also, by setting a specific Fermi surface of the highly polarized spin injection layer 11 at the interface with the ferromagnetic layer 12, highly polarized electrons having a large number of upward spins can flow toward the TMR element. it can.
【００４４】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は５５％であった。The element manufacturing process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the resistance change rate are the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was 55%.
【００４５】［実施の形態９］図９は、本発明による強
磁性トンネル型磁気抵抗効果素子の第９の構成例を示す
断面模式図である。図９に示した構成は、図４の構成に
おいて基体５０と高偏極スピン注入層１１の間に配向制
御膜２０を備えたものに相当する。[Ninth Embodiment] FIG. 9 is a schematic sectional view showing a ninth configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG. 9 corresponds to the configuration shown in FIG. 4 in which the orientation control film 20 is provided between the base 50 and the highly polarized spin injection layer 11.
【００４６】配向制御膜２０には、ＮｉＯを用いてその
膜厚は５０ｎｍとした。配向制御膜２０は、高偏極スピ
ン注入層１１の膜を配向させることによって磁気的な異
方性をもたせ磁区制御させ、磁気特性を向上させる。ま
た、高偏極スピン注入層１１のある特定のフェルミ面を
強磁性層１２との界面に出すことにより、上向きスピン
の数の多い高偏極した電子がＴＭＲ素子側に流れるよう
にすることができる。The orientation control film 20 was made of NiO and had a thickness of 50 nm. The orientation control film 20 imparts magnetic anisotropy by controlling the orientation of the film of the highly polarized spin injection layer 11 to control magnetic domains, thereby improving magnetic properties. Also, by setting a specific Fermi surface of the highly polarized spin injection layer 11 at the interface with the ferromagnetic layer 12, highly polarized electrons having a large number of upward spins can flow toward the TMR element. it can.
【００４７】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は５６％であった。The element manufacturing process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the resistance change rate are the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was 56%.
【００４８】［実施の形態１０］図１０は、本発明によ
る強磁性トンネル型磁気抵抗効果素子の第１０の構成例
を示す断面模式図である。図１０に示した構成は、図５
の構成において基体５０と高偏極スピン注入層の間に配
向制御膜２０を備えたものに相当する。[Embodiment 10] FIG. 10 is a schematic sectional view showing a tenth configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention. The configuration shown in FIG.
Corresponds to the configuration in which the orientation control film 20 is provided between the base 50 and the highly polarized spin injection layer.
【００４９】配向制御膜２０には、ＮｉＯを用いてその
膜厚は５０ｎｍとした。配向制御膜２０は、高偏極スピ
ン注入層１１の膜を配向させることによって磁気的な異
方性をもたせ磁区制御させ、磁気特性を向上させる。ま
た、高偏極スピン注入層１１のある特定のフェルミ面を
強磁性層１２との界面に出すことにより、上向きスピン
の数の多い高偏極した電子がＴＭＲ素子側に流れるよう
にすることができる。The orientation control film 20 was made of NiO and had a thickness of 50 nm. The orientation control film 20 imparts magnetic anisotropy by controlling the orientation of the film of the highly polarized spin injection layer 11 to control magnetic domains, thereby improving magnetic properties. Also, by setting a specific Fermi surface of the highly polarized spin injection layer 11 at the interface with the ferromagnetic layer 12, highly polarized electrons having a large number of upward spins can flow toward the TMR element. it can.
【００５０】素子作製工程は実施の形態１と同様であ
り、電極の配置及び抵抗変化率の測定方法も実施の形態
１と同様である。本実施の形態において得られたＴＭＲ
比は５５％であった。The device fabrication process is the same as in the first embodiment, and the arrangement of the electrodes and the method of measuring the rate of change in resistance are also the same as in the first embodiment. TMR obtained in the present embodiment
The ratio was 55%.
【００５１】［実施の形態１１］図１１は、本発明の高
偏極スピン注入ＴＭＲ素子を備える磁気センサーを搭載
した磁気ヘッドの概念図である。基体５０上に高偏極ス
ピン注入ＴＭＲ素子１０、電極（Ａｕ）４０、下部シー
ルド（ＮｉＦｅ）３５を１００ｎｍ、上部シールド兼下
部コア（ＮｉＦｅ）３６を１μｍ、コイル４２、上部コ
ア（ＣｏＮｉＦｅ）８３を形成してなり、対向面６３を
形成してなる。[Embodiment 11] FIG. 11 is a conceptual diagram of a magnetic head equipped with a magnetic sensor having a highly polarized spin injection TMR element of the present invention. A highly polarized spin injection TMR element 10, an electrode (Au) 40, a lower shield (NiFe) 35 of 100 nm, an upper shield / lower core (NiFe) 36 of 1 μm, a coil 42, and an upper core (CoNiFe) 83 are formed on a substrate 50. And the opposing surface 63 is formed.
【００５２】図１２は、本発明の磁気ヘッドを用いた磁
気記録再生装置の、磁気ヘッドと磁気記録媒体の近傍の
概念図である。ヘッドスライダー９０を兼ねる基体５０
上に高偏極スピン注入ＴＭＲ素子１０、電極４０を形成
し、これらからなる磁気ヘッドを磁気記録媒体９１の記
録トラック４４上に位置決めして再生を行う。ヘッドス
ライダー９０は記録媒体９１上を、対向面６３を対向し
て０．１μｍ以下の高さに浮上、もしくは接触して相対
運動する。この機構により、磁気抵抗効果積層膜１０は
記録媒体９１に記録された磁気的信号を、記録媒体９１
の漏れ磁界６４から読み取ることができる。FIG. 12 is a conceptual diagram of the vicinity of a magnetic head and a magnetic recording medium in a magnetic recording and reproducing apparatus using the magnetic head of the present invention. Base 50 also serving as head slider 90
A highly polarized spin injection TMR element 10 and an electrode 40 are formed thereon, and a magnetic head composed of these elements is positioned on a recording track 44 of a magnetic recording medium 91 to perform reproduction. The head slider 90 floats on the recording medium 91 to a height of 0.1 μm or less, facing the opposing surface 63, or makes a relative movement by contacting. With this mechanism, the magnetoresistive effect laminated film 10 transfers the magnetic signal recorded on the recording medium 91 to the recording medium 91.
Can be read from the leakage magnetic field 64.
【００５３】図１３は、本発明による磁気記録再生装置
の構成例を示す概略図である。磁気的に情報を記録する
記録媒体９１をスピンドルモーター９３にて回転させ、
アクチュエーター９２によってヘッドスライダー９０を
記録媒体９１のトラック上に誘導する。即ち、磁気ディ
スク装置においてはヘッドスライダー９０上に形成した
再生ヘッド、及び記録ヘッドがこの機構によって記録媒
体９１上の所定の記録位置に近接して相対運動し、信号
を順次書き込み、及び読み取るのである。FIG. 13 is a schematic diagram showing a configuration example of a magnetic recording / reproducing apparatus according to the present invention. A recording medium 91 for magnetically recording information is rotated by a spindle motor 93,
The head slider 90 is guided on the track of the recording medium 91 by the actuator 92. That is, in the magnetic disk device, the reproducing head and the recording head formed on the head slider 90 relatively move close to a predetermined recording position on the recording medium 91 by this mechanism, and write and read signals sequentially. .
【００５４】アクチュエーター９２はロータリーアクチ
ュエーターであるのがよい。記録信号は信号処理系９４
を通じて記録ヘッドにて媒体上に記録し、再生ヘッドの
出力を信号処理系９４を経て信号を得る。さらに再生ヘ
ッドを所望の記録トラック上へ移動せしめるに際して、
本再生ヘッドからの高感度な出力を用いてトラック上の
位置を検出し、アクチュエーターを制御して、ヘッドス
ライダーの位置決めを行うことができる。The actuator 92 is preferably a rotary actuator. The recording signal is sent to the signal processing system 94.
The recording is performed on a medium by a recording head, and a signal is obtained from the output of the reproducing head via a signal processing system 94. Further, when moving the reproducing head to a desired recording track,
The position on the track is detected by using the high-sensitivity output from the reproducing head, and the actuator can be controlled to position the head slider.
【００５５】本図ではヘッドスライダー９０、記録媒体
９１を各１個示したが、これらは複数であっても構わな
い。また、記録媒体９１は両面に記録媒体を有して情報
を記録してもよい。情報の記録がディスク画面の場合ヘ
ッドスライダー９０はディスクの両面に配置する。In this figure, one head slider 90 and one recording medium 91 are shown, but a plurality of them may be used. The recording medium 91 may have a recording medium on both sides to record information. When information is recorded on a disc screen, head sliders 90 are arranged on both sides of the disc.
【００５６】上記高偏極スピン注入層を備えた強磁性ト
ンネル型磁気抵抗効果センサーを搭載した磁気記録再生
装置において従来構造のセンサーを搭載した磁気記録再
生装置に比べて、高密度に対応する良好な特性を示し
た。The magnetic recording / reproducing apparatus equipped with the ferromagnetic tunnel type magnetoresistive sensor having the above-mentioned highly polarized spin injection layer has a higher density than the magnetic recording / reproducing apparatus equipped with the conventional sensor. Characteristics.
【００５７】[0057]
【発明の効果】本発明によると、ＴＭＲ素子に高偏極ス
ピン注入層を隣接させ、ＴＭＲ素子に高スピン偏極電子
を注入することにより、従来構造のＴＭＲ素子より高出
力の得られる強磁性トンネル型磁気抵抗効果素子を提供
できる。ひいては、良好な再生出力と安定性を有する磁
気ヘッド及び高密度磁気記録再生装置を得ることができ
る。According to the present invention, by providing a highly polarized spin injection layer adjacent to a TMR element and injecting highly spin-polarized electrons into the TMR element, a ferromagnetic material having a higher output than that of a conventional TMR element can be obtained. A tunnel type magnetoresistive element can be provided. As a result, it is possible to obtain a magnetic head and a high-density magnetic recording / reproducing apparatus having good reproduction output and stability.
【図１】本発明による強磁性トンネル型磁気抵抗効果素
子の第１の構成例を示す断面模式図。FIG. 1 is a schematic cross-sectional view showing a first configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図２】本発明による強磁性トンネル型磁気抵抗効果素
子の第２の構成例を示す断面模式図。FIG. 2 is a schematic sectional view showing a second configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図３】本発明による強磁性トンネル型磁気抵抗効果素
子の第３の構成例を示す断面模式図。FIG. 3 is a schematic sectional view showing a third configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図４】本発明による強磁性トンネル型磁気抵抗効果素
子の第４の構成例を示す断面模式図。FIG. 4 is a schematic cross-sectional view showing a fourth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図５】本発明による強磁性トンネル型磁気抵抗効果素
子の第５の構成例を示す断面模式図。FIG. 5 is a schematic sectional view showing a fifth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図６】本発明による強磁性トンネル型磁気抵抗効果素
子の第６の構成例を示す断面模式図。FIG. 6 is a schematic sectional view showing a sixth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図７】本発明による強磁性トンネル型磁気抵抗効果素
子の第７の構成例を示す断面模式図。FIG. 7 is a schematic sectional view showing a seventh configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図８】本発明による強磁性トンネル型磁気抵抗効果素
子の第８の構成例を示す断面模式図。FIG. 8 is a schematic sectional view showing an eighth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図９】本発明による強磁性トンネル型磁気抵抗効果素
子の第９の構成例を示す断面模式図。FIG. 9 is a schematic sectional view showing a ninth configuration example of the ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図１０】本発明による強磁性トンネル型磁気抵抗効果
素子の第１０の構成例を示す断面模式図。FIG. 10 is a schematic sectional view showing a tenth configuration example of a ferromagnetic tunnel type magnetoresistance effect element according to the present invention.
【図１１】本発明の強磁性トンネル型磁気抵抗効果素子
を用いた記録再生ヘッドの一例を示す概念斜視図。FIG. 11 is a conceptual perspective view showing an example of a recording / reproducing head using the ferromagnetic tunnel type magnetoresistance effect element of the present invention.
【図１２】本発明の磁気ヘッドを用いた磁気記録再生装
置の、磁気ヘッドと磁気記録媒体の近傍の概念図。FIG. 12 is a conceptual diagram showing the vicinity of a magnetic head and a magnetic recording medium in a magnetic recording / reproducing apparatus using the magnetic head of the present invention.
【図１３】本発明による磁気記録再生装置の構成例を示
す図。FIG. 13 is a diagram showing a configuration example of a magnetic recording / reproducing apparatus according to the present invention.
【図１４】電流比Ｉinj／ＩTMRに対してＴＭＲ比をプロ
ットした図。FIG. 14 is a diagram plotting the TMR ratio with respect to the current ratio I inj / I TMR.
【図１５】電流比Ｉinj／ＩTMRに対してＴＭＲ比をプロ
ットした図。FIG. 15 is a diagram plotting the TMR ratio with respect to the current ratio I inj / I TMR.
１…強磁性トンネル型磁気抵抗効果（ＴＭＲ）素子、１
０…高偏極スピン注入ＴＭＲ素子、１１…高偏極スピン
注入層、１２…強磁性自由層、１３…絶縁障壁層、１４
…強磁性固定層、１５…反強磁性層、２０…配向制御
膜、２１…電極、２２…電極、２３…保護膜、２４…電
極、２５…層間絶縁層、５０…基体、１１１…絶縁層、
１１２…非磁性中間層、１１４…非磁性中間層、３５…
下部シールド、３６…上部シールド兼下部コア、４０…
電気端子、４１…コイル、５０…基体、６３…対向面、
６４…記録媒体からの漏れ磁界、８３…上部コア、９０
…スライダー、９１…記録媒体、９２…アクチュエータ
ー、９３…スピンドルモーター、９４…信号処理回路1: Ferromagnetic tunneling magnetoresistance (TMR) element, 1
0: Highly polarized spin injection TMR element, 11: Highly polarized spin injection layer, 12: Ferromagnetic free layer, 13: Insulation barrier layer, 14
... ferromagnetic fixed layer, 15 ... antiferromagnetic layer, 20 ... orientation control film, 21 ... electrode, 22 ... electrode, 23 ... protective film, 24 ... electrode, 25 ... interlayer insulating layer, 50 ... base, 111 ... insulating layer ,
112 non-magnetic intermediate layer, 114 non-magnetic intermediate layer, 35
Lower shield, 36 ... Upper shield and lower core, 40 ...
Electrical terminals, 41: coil, 50: base, 63: facing surface,
64: leakage magnetic field from the recording medium, 83: upper core, 90
... Slider, 91 ... Recording medium, 92 ... Actuator, 93 ... Spindle motor, 94 ... Signal processing circuit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 添谷 進 東京都国分寺市東恋ヶ窪一丁目280番地 株式会社日立製作所中央研究所内 Ｆターム(参考） 5D034 BA05 BA08 BA21 CA00 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Susumu Suedani 1-280 Higashi Koigabo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 5D034 BA05 BA08 BA21 CA00
Claims (5)
膜厚方向に電流を流すための電極を備えた磁気抵抗効果
ヘッドにおいて、 前記磁気抵抗効果膜は強磁性自由層、絶縁障壁層、強磁
性固定層及び反強磁性層を含む強磁性トンネル型磁気抵
抗効果膜であり、高偏極スピン注入層が前記強磁性自由
層に隣接して設けられていることを特徴とする磁気抵抗
効果ヘッド。1. A magnetoresistive head comprising a magnetoresistive film and an electrode for flowing a current in a thickness direction of the magnetoresistive film, wherein the magnetoresistive film is a ferromagnetic free layer, an insulating barrier layer, A ferromagnetic tunnel type magnetoresistive film including a ferromagnetic fixed layer and an antiferromagnetic layer, wherein a highly polarized spin injection layer is provided adjacent to the ferromagnetic free layer. head.
膜厚方向に電流を流すための電極を備えた磁気抵抗効果
ヘッドにおいて、 前記磁気抵抗効果膜は強磁性自由層、絶縁障壁層、強磁
性固定層及び反強磁性層を含む強磁性トンネル型磁気抵
抗効果膜であり、高偏極スピン注入層が前記強磁性自由
層に絶縁層を介して隣接して設けられていることを特徴
とする磁気抵抗効果ヘッド。2. A magnetoresistive head comprising a magnetoresistive film and an electrode for flowing a current in the thickness direction of the magnetoresistive film, wherein the magnetoresistive film is a ferromagnetic free layer, an insulating barrier layer, A ferromagnetic tunneling magnetoresistive film including a ferromagnetic fixed layer and an antiferromagnetic layer, wherein a highly polarized spin injection layer is provided adjacent to the ferromagnetic free layer via an insulating layer. Magnetoresistive effect head.
膜厚方向に電流を流すための電極を備えた磁気抵抗効果
ヘッドにおいて、 前記磁気抵抗効果膜は強磁性自由層、絶縁障壁層、強磁
性固定層及び反強磁性層を含む強磁性トンネル型磁気抵
抗効果膜であり、高偏極スピン注入層が前記強磁性自由
層に絶縁層及び非磁性中間層を介して隣接して設けられ
ていることを特徴とする磁気抵抗効果ヘッド。3. A magnetoresistive head comprising a magnetoresistive film and an electrode for flowing a current in a thickness direction of the magnetoresistive film, wherein the magnetoresistive film is a ferromagnetic free layer, an insulating barrier layer, A ferromagnetic tunnel type magnetoresistive film including a ferromagnetic fixed layer and an antiferromagnetic layer, wherein a highly polarized spin injection layer is provided adjacent to the ferromagnetic free layer via an insulating layer and a nonmagnetic intermediate layer. A magnetoresistive head.
ヘッドにおいて、前記高偏極スピン注入層は配向制御膜
上に形成されていることを特徴とする磁気抵抗効果ヘッ
ド。4. The magnetoresistive head according to claim 1, wherein said highly polarized spin injection layer is formed on an orientation control film.
動する記録媒体駆動手段と、記録部と再生部とを備える
磁気ヘッドと、前記磁気ヘッドを駆動する磁気ヘッド駆
動手段とを含む磁気記録再生装置において、 前記磁気ヘッドの再生部として請求項１〜４のいずれか
１項記載の磁気抵抗効果ヘッドを用いたことを特徴とす
る磁気記録再生装置。5. A magnetic recording apparatus comprising: a magnetic recording medium; a recording medium driving unit for driving the magnetic recording medium; a magnetic head including a recording unit and a reproducing unit; and a magnetic head driving unit for driving the magnetic head. 5. A magnetic recording / reproducing apparatus, wherein the magneto-resistance effect head according to claim 1 is used as a reproducing section of the magnetic head.
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|---|---|---|---|
| JP2000008172A JP3420152B2 (en) | 2000-01-17 | 2000-01-17 | Magnetoresistive head and magnetic recording / reproducing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000008172A JP3420152B2 (en) | 2000-01-17 | 2000-01-17 | Magnetoresistive head and magnetic recording / reproducing device |
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| Publication Number | Publication Date |
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| JP3420152B2 JP3420152B2 (en) | 2003-06-23 |
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| JP2002261352A (en) * | 2000-12-07 | 2002-09-13 | Commiss Energ Atom | Magnetic spin magnetization device and magnetization rotating device having storage function, and writing method using the device |
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| US6781801B2 (en) * | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
| US7378699B2 (en) | 2002-03-25 | 2008-05-27 | Hitachi Global Storage Technologies Japan, Ltd. | Magnetic head having a magnetoresistive element and highly polarized spin injection layer |
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| JP2005116923A (en) * | 2003-10-10 | 2005-04-28 | Hitachi Ltd | Nonvolatile magnetic memory cell using spin torque and magnetic random access memory using same |
| JP2008047566A (en) * | 2006-08-10 | 2008-02-28 | Japan Science & Technology Agency | Magnetoresistive effect element and non-volatile random access magnetic memory |
| TWI401680B (en) * | 2006-12-12 | 2013-07-11 | Sony Corp | Storage element and memory |
| US9172029B2 (en) | 2006-12-12 | 2015-10-27 | Sony Corporation | Storage element and memory |
| US9728715B2 (en) | 2006-12-12 | 2017-08-08 | Sony Corporation | Storage element and memory |
| US10121963B2 (en) | 2006-12-12 | 2018-11-06 | Sony Corporation | Storage element and memory |
| US10475989B2 (en) | 2006-12-12 | 2019-11-12 | Sony Corporation | Storage element and memory |
| US10862024B2 (en) | 2006-12-12 | 2020-12-08 | Sony Corporation | Storage element and memory |
| US11349067B2 (en) | 2006-12-12 | 2022-05-31 | Sony Corporation | Storage element and memory |
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