JP2001198833A - Diamond grinding wheel and diamond grinding method, ground diamond body obtained thereby, single-crystal diamond, sintered diamond body, composite diamond grinding wheel, and diamond grinding wheel segment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To attain an inexpensive grinding wheel for diamond and a diamond grinding method capable of grinding single crystal diamond, diamond thin film, sintered diamond body or the like at low temperature without causing cracking, fracture, or deterioration, maintaining stable performance of an abrasive, and attaining stable grinding quality by simple operation. SOLUTION: This diamond grinding wheel has major constituents formed out of an intermetallic compound of one or more elements selected out of a group of Al, Cr, Mn, Fe, Co, Ni, Cu and one or more elements selected out of a group of Zr, Hf, V, Nb, Mo, Ta, W. This diamond grinding method includes pressing the grinding wheel against the diamond relatively rotating or moving the grinding wheel at room temperature or, as necessary, while heating a portion to be ground to 100 to 800 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a polycrystalline diamond, a diamond single crystal, a diamond thin film (including a diamond or a diamond free-standing film (foil or plate) formed on a substrate by a vapor phase synthesis method), and a diamond sintered body. And the like, and a diamond polishing method for efficiently polishing diamond itself or a material containing diamond without causing cracking or destruction, and a diamond polishing product (diamond thin film, polycrystalline diamond) obtained by polishing. Etc.),
The present invention relates to a single crystal diamond and a diamond sintered body.

[0002]

2. Description of the Related Art Today, one of the materials using diamond is described.
As one, attention has been paid to diamond thin films. This diamond thin film is industrially (artificially) manufactured by a vapor phase synthesis method (CVD method) to produce a diamond thin film (a thin film formed on a substrate and a diamond film covering member) or a diamond free-standing film made of polycrystalline grains. However, the diamond thin film composed of a large number of crystal grains obtained by the above-mentioned synthesis method has a highly uneven surface.
Therefore, when a diamond thin film formed by the vapor phase synthesis method is used for an electronic component, an optical component, an ultra-precision component, a processing tool, or the like, it is necessary to smooth the surface of the diamond.

[0003] Natural and artificial single crystal diamonds (by ultra-high pressure synthesis, vapor phase synthesis, etc.) are used as various industrial materials or jewelry articles such as dressers, blades, dies, heat sinks and X-ray windows for grinding wheels. However, finally, it is necessary to finish the shape that can be applied to each application. Furthermore, the diamond sintered body using diamond is a tool for high-speed precision grinding or polishing of an automobile engine or the like, precision grinding or polishing of a cemented carbide, utilizing its characteristics.
It is widely used for cutting or cutting blades, parts for wear-resistant mechanisms, heat sinks or packages for communication devices, and the like. Note that the sintered diamond material is made of Co, WC, T
Although iC and the like are used, some contain little or no binder. In the present invention, all of these sintered bodies are included unless otherwise specified.

[0004] Since diamond is an extremely hard substance such that it is used for polishing other hard materials such as metals and ceramics or fine polishing of jewelry, it is easy for anyone to easily grind diamond. Can understand. As a method of smoothing a polycrystalline diamond film having such a large number of irregularities or a three-dimensional structure, a skiff method is used in which a tough cast iron plate is rotated at a high speed, diamond powder is interposed, and the diamond is polished while being co-rubbed (co-cutting). Is mentioned. Although this method has been used for polishing diamonds for jewelry, the processing efficiency is extremely low as a method for polishing the above-mentioned artificial diamond, and unfortunately is almost useless.

[0005] In particular, the diamond single crystal has a remarkable change in hardness depending on the crystal plane or crystal orientation, and the plane that can be processed at present is limited to the (100) plane or the (110) plane. Polishing of the (111) plane, which is the most excellent, is extremely difficult and practically impossible. For this reason, when polishing a diamond single crystal, a highly skilled technique for polishing while examining the crystallizable plane and crystal orientation around the polished surface is required, which complicates the polishing of diamond. And the cost was high.

[0006] In the polishing of a diamond sintered body, the difference in hardness at the grain interface between diamond and a binder or between diamonds or in the polishing method using a diamond grindstone (co-shear) as described later, or in the sintered body. A large step (about several μm) is likely to occur due to the dropping of many diamond particles, and when used as a processing tool as described above, there is a problem of processing accuracy such as transfer caused by such a step, and abrasion resistance. When used as a mechanical mechanism part, there is a problem that the friction characteristics are reduced, and diamond itself in the sintered body is damaged or falls off.

[0007] As described above, since the hardness of diamond is such a hard material that there is no substitute, it is generally considered that there is no other abrasive than diamond (co-rubbing). Polishing whetstones in which diamond abrasive grains are embedded in various types of binders have been considered. Examples of such a grindstone include a resin bond grindstone using a phenol resin, a metal bond grindstone, a vitrified bond grindstone using feldspar / quartz, and an electrodeposition grindstone.

[0008] The basis of these techniques is a diamond to be polished (unless specifically described in this specification, not only a diamond thin film and a self-stereotype, but also a single crystal diamond, a diamond sintered body, and a diamond other than the above. This means that the surface of diamond itself and a material containing diamond, such as crystalline diamond, are scratched and polished with diamond abrasive grains. The number is the point that determines the processing efficiency, the various bonding materials serving as the diamond support do not hinder the polishing, and the diamond abrasive grains must always newly appear on the polished surface each time they are worn.

As one of the methods, a grinding stone bonding material such as iron is used to electrically oxidize (electrolyze) iron with the abrasion of diamond (in this case, there are diamond abrasive grains effectively acting on polishing). In the meantime, an oxide non-conductive film of iron is formed and the grinding stone bond material is not electrolyzed), and a polishing method that automatically generates a new surface of diamond abrasive grains according to the wear amount of diamond is is there.
This method is considered to be the most efficient method among the above, but selection of high quality diamond powder to be abrasive grains, selection of grinding stone bond material and embedding work and maintenance of quality, electrolytic equipment and its condition setting, polishing operation And control are required, these determine the quality of diamond polishing, the operation is complicated,
There are problems that the cost is high and the polishing quality is not stable.

When the material to be polished is a diamond thin film,
Because the number of diamond grains, which is the material to be polished, is overwhelmingly greater than the number of diamond grains acting on the polishing process,
Processing speed and processing efficiency are naturally limited. As described above, the polishing method using the diamond grindstone has a problem that the grindstone is severely reduced and an expensive processing apparatus which can apply high pressure with high accuracy is required.

As a method other than the above, there has been proposed a method in which iron or stainless steel is pressed against diamond and polished.
Although diamond is chemically stable at room temperature, it is graphitized when heated to 700 ° C. in air and starts to burn, and becomes graphitized at 1400 ° C. or higher even in vacuum. The above method is a method of polishing using the reaction between iron and diamond at such a high temperature. The reaction between iron and diamond (the carbon in the diamond component dissolves in the metal) is 8
It is understood that Fe ₃ C (cementite) is generated from about 00 ° C., which is separated from the friction surface during polishing, and that the polishing proceeds. At a high temperature, this reaction is further facilitated, and the generation and decomposition of Fe ₃ C occur, and the polishing proceeds. 900 ° considering processing efficiency
It is said that C or more is necessary.

This iron or iron-based material was considered to be a good method in that an inexpensive abrasive could be used, but the main problem with this method was that efficient polishing would not be possible without heating to high temperatures. That is to say. However, stainless steel and iron-based materials are softened at high temperatures and the strength is significantly reduced, so that stable polishing cannot be performed. In particular, when using high-temperature iron,
In order to prevent oxidation of iron, it is necessary to perform polishing in a vacuum or in a reducing atmosphere. Therefore, there is a problem in terms of equipment and that the polishing operation is complicated (cannot be performed freely).

Furthermore, the high-temperature heating as described above affects the diamond to be polished, causing cracks or breakage of the diamond due to friction and thermal stress due to a rapid temperature gradient during heating. And other problems. For this reason, instead of iron, chromium or titanium, which has a high affinity for carbon, was used, but the former was brittle and could not be processed, and the latter was too soft and easily oxidized, like titanium, and became titanium oxide, making it an abrasive. Could not be used. In addition, laser processing and the like are conceivable, but the surface accuracy is inferior and cannot be used.

[0014]

As described above, the present invention relates to a diamond single crystal, a diamond thin film (including a diamond or a diamond free-standing film (foil or plate) formed on a substrate by a vapor phase synthesis method), and a diamond sintered body. And other polycrystalline diamonds or the like, diamond itself or a material containing diamond can be polished at a low temperature (including room temperature) without cracking, destruction or deterioration of quality, and the stable performance of the abrasive can be improved. Maintained and obtained by surface grinding, lap grinding, other conventional polishing equipment, low-cost diamond polishing wheel and diamond polishing method with simple operation and stable polishing quality and obtained by polishing To obtain a diamond polished body, single crystal diamond and diamond sintered body That. In addition, by using the method of the present invention, a diamond film member having a three-dimensional shape, which is expected to increase sharply with the application of diamond film in the future, and a diamond film-coated member can be efficiently ground and polished.
The task is to perform at low cost. The present inventor has already prepared an excellent diamond polishing material mainly containing an intermetallic compound of one or more elements selected from the group consisting of Al, Cr, Mn, Fe, Co, Ni, and Cu and a Ti element. Proposal of whetstones (Japanese Patent Application No. 11-130991, Japanese Patent Application No. 1
1-218850, Japanese Patent Application No. 11-320523).
The present invention further develops these and provides a useful diamond polishing wheel.

[0015]

The inventor of the present invention has found that a special metal material can efficiently react with diamond and can be polished at a low temperature, a normal temperature (room temperature), or under heating. It has been found that wear and deterioration of the abrasive can be minimized even in the atmosphere. Based on this finding, the present invention provides: One or more elements selected from the group consisting of Al, Cr, Mn, Fe, Co, Ni, Cu and Zr, Hf,
1. A diamond-grinding whetstone mainly containing an intermetallic compound with one or more elements selected from the group consisting of V, Nb, Mo, Ta and W. Al, Cr, Mn, Fe, Co, Ni, Cu, R
1 selected from the group of u, Rh, Pd, Os, Ir, Pt
2. The grinding wheel for diamond polishing as described in 1 above, further comprising, as a main component, an intermetallic compound of one or more kinds of elements and a Ti element. One or more elements selected from the group consisting of Ru, Rh, Pd, Os, Ir, and Pt, and Ti, Zr, Hf,
3. A grindstone for diamond polishing mainly comprising an intermetallic compound with one or more elements selected from the group consisting of V, Nb, Mo, Ta and W. One, two or more elements selected from the group consisting of Al, Cr, Mn, Fe, Co, Ni, Cu and Ti, Zr, H
an intermetallic compound with one or more elements selected from the group consisting of f, V, Nb, Mo, Ta, W,
4. The grinding wheel for diamond polishing according to the above item 3, further comprising: 5. The grinding wheel for diamond polishing according to any one of the above items 1 to 4, wherein the content of the intermetallic compound is 90% by volume or more. 6. The grinding wheel for diamond polishing according to any one of the above 1 to 5, wherein a part or all of the wheel for diamond polishing is the intermetallic compound.

Furthermore, the present invention relates to 7. A diamond polishing method characterized in that when polishing diamond with a grindstone containing the intermetallic compound described in any one of the above 1 to 6 as a main component, polishing is performed while heating the polishing portion to 100 to 800 ° C. 8. The diamond polishing method according to the above 7, wherein the polishing section is heated to 300 to 500 ° C. 9. The diamond polishing method according to the above item 7 or 8, wherein the content of the intermetallic compound is 90% by volume or more. 10. A diamond-polished body characterized by being polished with a diamond-polishing grindstone containing the intermetallic compound described in any one of 1 to 6 above as a main component. The crystal grain boundary step on the polished surface of the diamond film after polishing is 0.1 μm or less when the thickness of the diamond film exceeds 300 μm, and is 0.02 μm or less when the thickness of the diamond film is 300 μm or less. Characteristic 1 above
Diamond-processed body described in 0. 12. Single-crystal diamond characterized by being polished with a diamond-polishing grindstone containing the intermetallic compound described in any one of 1 to 6 above as a main component. 13. The single crystal diamond according to the above item 12, wherein the polished surface is a (111) plane. 14. A diamond sintered body characterized by being polished with a diamond polishing grindstone containing the intermetallic compound described in any of 1 to 6 above as a main component. 15. The diamond sintered body according to the above 14, wherein the surface roughness after polishing is 0.5 μm or less. A composite grinding wheel for diamond polishing and a grinding wheel segment characterized by combining the intermetallic compound described in any one of 1 to 6 above with diamond abrasive grains, cemented carbide or ceramics. In addition, the intermetallic compound described in this specification encompasses a complex intermetallic compound.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION The diamond polishing wheel of the present invention can be manufactured by, for example, a powder metallurgy method.
In this case, each of the raw material powders has an average particle size of 150 μm.
Or less (preferably 10 μm or less) of Ti, Zr, Hf,
One or more powders selected from the group consisting of V, Nb, Mo, Ta, W, and Al, Cr, Mn, Fe, Co, N
One or more powders selected from the group of i, Cu, Ru, Rh, Pd, Os, Ir, and Pt (hereinafter referred to as “grinding powder” unless otherwise specified) are each metal. Intermetallic compound (hereinafter, unless otherwise specified, includes "the compound having an intermetallic compound content of 90% by volume or more")
However, the composition and ratio of the whetstone of the intermetallic compound of the present invention are adjusted, and these are mixed by a ball mill and dried to obtain a mixed powder. As the raw material powder, fine atomized powder can be used. It is also possible to use whetstone powder alloyed in advance in a predetermined ratio by a mechanical alloying method. When a fine and uniform mixed powder is used, there is an advantage that the density of the sintered body is high, so that a uniform and dense grindstone can be obtained. These powders may be a single metal powder, a powder previously alloyed (intermetallic compound), or a composite powder thereof.

Next, the mixed and ground powder is put into a mold and
After preforming, for example, cold isostatic pressure treatment (CIP treatment)
And at a temperature of 1000 to 1300 ° C. and a pressure of 500 kgf
/ Cm ²Hot sintering (HP processing) under the conditions of
Or after CIP treatment, similarly 1000-1300
° C, pressure 500Kgf / cm²Hot isostatic firing under the conditions of
(HIP treatment) to high density (relative density 99% or more
It is desirable that the sintered body is CIP processing, HP
Conditions such as temperature and pressure for processing and HIP processing are limited to the above.
Without considering the type of raw material or the density of the target sintered body, etc.
Other conditions may be set. In addition, the above CI
Instead of P treatment, HP treatment, HIP treatment, etc.
Filled with a powder mixture, and punch it up and down (electrode)
Heating by pulse current while compressing between
In other words, it can be made into a sintered body by pulse current sintering method.
You. In this case, in particular, use the mechanical alloy powder described above.
And a dense and uniform sintered body can be obtained.

The alloy whetstone containing the intermetallic compound of the present invention as a main component can also be produced by a melting method such as vacuum arc melting, plasma melting, electron beam melting and induction melting. At the time of dissolution, gas, especially oxygen, is remarkably mixed, and since the elements forming the intermetallic compound such as aluminum and titanium have a strong bonding force with oxygen, they are dissolved in a vacuum or an inert gas. It is necessary. Also,
Since cast products of alloy whetstones containing these intermetallic compounds as a main component tend to have lower mechanical strength than sintered products, the temperature must be controlled so that segregation and crystal grains do not occur during the melting and solidification processes. It is necessary to control and manufacture. A required grinding wheel shape is cut out from the sintered body or ingot obtained by the powder metallurgy method or the smelting method, and is finished to a shape suitable for a grinding wheel such as a surface grinding machine and a lap grinding machine, and a configuration of the alloy grinding wheel holder and the like. It is fixed with parts or the like to make a diamond grinding tool.

As an example of the object to be polished, if a diamond thin film or diamond self-solid is used, the diamond thin film or diamond self-solid can be prepared by a generally known vapor phase growth method (CVD method). For example, a quartz tube which is open at a position near a tungsten filament heated to a high temperature (around 2000 ° C.) is arranged, and a mixed gas obtained by diluting a hydrocarbon gas such as methane with hydrogen is introduced through the quartz tube, and a temperature of 500 ° C. A method in which diamond is decomposed and precipitated from the mixed gas on a substrate heated to １1100 ° C., a microwave plasma CVD method using a plasma discharge, an RF (high frequency) plasma CVD method, a DC ( Direct current) arc plasma jet method, or a method in which a flame of oxygen acetylene is applied to a substrate at a high speed in the atmosphere to decompose and precipitate diamond from a hydrocarbon-containing gas. The present invention can be applied to a diamond thin film or a diamond self-solid formed by these methods or other methods.

Natural or artificial diamonds can also be easily polished. Especially diamond single crystal (11
1) Surface polishing is said to be impossible with conventional technology,
According to the grindstone of the present invention, the (111) plane has a surprising performance that polishing proceeds in only a few minutes. Since the (111) surface can be polished, a high-quality (111) surface can be used as a rake face of a cutting tool, and a high-performance using the (111) surface as a precision tool for a grindstone. It is possible to obtain high-performance and high-value-added diamond single crystals such as a diamond single-stone dresser and a high heat conductive heat sink.

Very high quality polishing is possible even when the object to be polished is a diamond sintered body. There is almost no step difference due to the difference in hardness at the grain interface between diamond and the binder or between the diamonds or the drop off of diamond abrasive grains, which is caused by the diamond grinding stone (co-shearing) polishing method. The resulting transfer problem does not occur. In addition, the diamond sintered body can be polished extremely homogeneously without the problem of a decrease in frictional characteristics that tends to occur when used as a wear-resistant mechanism part.

At the time of polishing with the grindstone of the present invention, the diamond is polished by pressing at a room temperature (normal temperature) or at a temperature of 100 to 800 ° C. while rotating or moving relative to the diamond. I do. When the thickness of the diamond thin film formed on the substrate as described above is small, for example, when the thickness is about 10 μm, the roughness of the diamond surface is about several μm, so that the polishing resistance is small and sufficient polishing can be performed at room temperature. At the point of contact between the diamond and the grindstone, frictional heat causes local high temperatures, but in such a situation, for example, TiC, TiA
Grinding wheel components of the present invention (Al, C
r, Mn, Fe, Co, Ni, Cu, Ru, Rh, P
d, Os, Ir, Pt or Ti, Zr, Hf, V,
It is presumed that diamond carbide (chemical polishing) is progressing more effectively due to the formation of brittle carbides, carbonitrides, and the like with Nb, Mo, Ta, and W) and the separation of the carbides.

On the other hand, when the diamond has a large thickness and a large crystal grain size (having a film thickness of several tens μm or more and having crystal grains of several μm to several tens μm), the polishing resistance increases. However, heating is effective in such a case.
In this case, at the time of heating, at least a part of a grinding stone and / or a portion to be polished is heated, and the temperature of the polishing portion is set to 100
Polishing by adjusting to ~ 800 ° C. If the temperature of external heating is less than 100 ° C., the toughness of the alloy grindstone is inferior, and the grindstone is likely to crack. Also, the diamond itself is subjected to substantially the same heating by the above-mentioned heating and frictional heat. However, when the temperature exceeds 800 ° C., cracks or cracks often occur due to the thermal effect on the diamond or the like, and the diamond or the like is damaged. It is necessary to avoid it. As the heating temperature, 300 to 500 ° C. is more preferable. The total heat of external heating applied to the polishing section is adjusted so as to be within the above-mentioned temperature range. Although it is necessary to set the temperature in consideration of a temperature rise due to frictional heat, the temperature may suddenly exceed 800 ° C. due to frictional heat. The heating temperature set in the present invention does not include such a sudden increase in the heating temperature in the present invention.

The diamond polishing wheel of the present invention has a feature that its hardness at room temperature is extremely large as compared with stainless steel. While the hardness of the intermetallic compound grindstone of the present invention obtained by the powder method reaches Hv 500 to 1000 Kg / mm ² , that of stainless steel is Hv to 200 Kg / m 2.
not only about m ^2. That is, the hardness of the intermetallic compound grindstone of the present invention reaches 2.5 to 5 times that of stainless steel. Further, the intermetallic compound grindstone of the present invention has an excellent property that the hardness decreases little even at a high temperature, and the strength increases with the temperature up to about 600 ° C. In the diamond polishing wheel of the present invention, more importantly,
A surprisingly high abrasion resistance to diamond. This is a cemented carbide with much higher hardness (WC
+ 16% Co: Hv〜1500 Kg / mm ² ), which can be easily understood from the fact that the friction loss is smaller than that.

The low wear loss of the diamond polishing wheel of the present invention is not only suitable for diamond polishing, but also
It has the feature that the amount of wear of diamond is significantly increased. Ti, Ni or the like alone promotes the reaction with carbon, but softens as the temperature rises, and easily oxidizes particularly in the atmosphere to form titanium oxide, so that it has almost no role as an abrasive. However, the diamond polishing whetstone of the present invention can be polished without generating cracks by pressing while heating at room temperature or at 100 to 800 ° C. and relatively rotating or moving. A particularly effective heating temperature range for polishing by external heating is 300 to 500 ° C. The diamond is thermally affected by the above heating, and the reactivity of the diamond with the grinding wheel of the present invention is enhanced, the reaction between carbon as a component of diamond and Ti in the grinding wheel is facilitated, and fine projections of diamond crystal grains are formed. The part is effectively reduced in wear.

In the process of producing a diamond thin film as described above, particularly when a thick diamond film is formed, the crystal grains of the diamond become coarse and the irregularities on the crystal surface become severe, making polishing extremely difficult. However, by polishing using the grindstone of the present invention while heating to 100 to 800 ° C., such hard-to-polish diamonds can be easily polished without destruction of the grindstone or extreme wear. It became possible. Furthermore, it was confirmed that the heating to the above-mentioned temperature range strengthened the crystal grain boundaries of the alloy whetstone and made it difficult for grain boundary cracks to occur. At the point of contact between the diamond and the grindstone, it is presumed that due to frictional heat and external heating, chemical polishing due to the formation of carbides and carbonitrides occurs strongly, and more effective diamond polishing is in progress.

It is, of course, possible to take advantage of these remarkable features of the grindstone of the present invention and to utilize this grindstone in some of the other diamond polishing methods. The present invention covers all such uses. When trying to manufacture a diamond polishing wheel consisting of a single intermetallic compound,
As a component other than the intermetallic compound, an individual component element of the intermetallic compound may exist as a simple substance or a trace amount of impurities may be mixed. However, in this case, when the intermetallic compound of the present invention is contained in the grindstone at 90% by volume or more, the function as a grindstone can be sufficiently exhibited. In addition, the grindstone of the present invention is, as described later, an element (metal) constituting the intermetallic compound or a metal or alloy other than the metal constituting the intermetallic compound, or a cemented carbide, a semimetal element, a nonmetal element, It can be used in combination with or mixed with ceramics (including glass), diamond abrasive grains, organic compounds (polymers), and the like. Therefore, the above 90
The intermetallic compound of not less than volume% shows only a preferable example in the case of using it alone as a grindstone, and the grindstone of the present invention is not limited to the above ratio.

For example, in order to increase the strength or toughness of a diamond polishing wheel made of the intermetallic compound of the present invention,
Al, Cr, which are main elements constituting the intermetallic compound,
Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, O
one or more elements selected from the group consisting of s, Ir and Pt, or Ti, Zr, Hf, V, Nb, Mo, T
One or more elements selected from the group of a and W or elements other than these can be further added. Depending on the type of intermetallic compound, it may be too brittle by itself to form a grindstone. However, the strength can be improved by combining with a material capable of improving strength or toughness as described above, or by forming a composite intermetallic compound with another intermetallic compound. Therefore, even if it cannot be used as a grindstone by itself, it is possible to use it as a grindstone by performing the above.
The present invention also includes such a grindstone. In order to improve the hardness of the grinding wheel for diamond polishing, ceramics or cemented carbide may be added. The present invention includes all of these. Further, the present invention uses a part or all of the grinding wheel for diamond polishing as the intermetallic compound, whereby the function of the grinding wheel can be remarkably improved. For example, similarly to a conventional diamond grinding wheel, a composite grinding wheel in which diamond abrasive grains are supported by an intermetallic compound, a composite grinding wheel of an intermetallic compound of the present invention and a ceramic, an intermetallic compound and a metal in which an intermetallic compound is an abrasive grain Alternatively, a composite grindstone with a carbide tool material or the like, or a composite of these can be used. As described above, when a composite grinding wheel or a mixed grinding wheel is used, the mixing ratio (volume ratio) of these materials is used.
The volume ratio of the binder and the binder and the like can be arbitrarily selected according to the processing purpose and application, and is not particularly limited. Further, the above-mentioned grindstone can be used in combination with a part of the conventional grindstone segment. These are all included in the present invention.

Diamond having a smooth surface, which is easily and accurately polished by the method of the present invention, particularly, single crystal diamond is a high performance diamond single stone dresser, a high heat conduction heat sink, etc. The diamond thin film or the diamond solid obtained by the method of the present invention as a sintered body processing tool or a wear-resistant mechanical component is used for a circuit board, a high-frequency device, a heat sink, various optical components, and a surface acoustic wave device (filter). As a material suitable for flat panel displays, electronic device parts such as semiconductors and radiation sensors, precision machine parts, various sliding parts, etc., there is an effect that the use of diamond materials having excellent performance can be dramatically expanded.

[0031]

Examples and Comparative Examples Next, the present invention will be described based on Examples and Comparative Examples. In addition, this Example shows a preferable example, and it is for making the understanding of this invention easy, and this invention is not limited by these examples. That is, other embodiments and examples within the technical idea of the present invention are naturally included in the present invention.

(Whetstone and its manufacturing conditions) Ti, Zr, H
f, V, Nb, Mo, Ta, W, one or more powders selected from the group consisting of Al, Cr, Mn, Fe, Co,
One, two or more powders selected from the group of Ni, Cu, Ru, Rh, Pd, Os, Ir, and Pt are blended in such a ratio that each intermetallic compound of the present invention can be formed. The powders (2 to 10 μm) were charged into a ball mill and milled for about 100 to 300 hours to obtain mechanical alloying powders. These powders were subjected to pulse current sintering at 900 ° C. under a pressure of 50 MPa. After sintering for each minute, each intermetallic compound sintered body grindstone was obtained. (Workpiece) Diamond thin film: Using a mixed gas of H ₂ / CH _{4, a} diamond thin film is formed on a 4 mm-thick polycrystalline Si substrate by a hot filament method. Diamond thin film thickness:
10 μm (roughness is several μm or less), 300 μm, 500 μ
m Dimension: 19mm × 19mm ・ Diamond sintered body ・ Diamond single crystal (polishing conditions by whetstone) ・ Temperature: Room temperature (15-30 ° C) or 10 polished parts
Heated to 0 to 800 ° C ・ Rotation speed: 400 to 3000 rpm ・ Whetstone shape: φ30 mm ・ Pressing load: 1 kgf to 10 kgf ・ Time: 1 to 10 minutes

(Example 1) Zr-Ni intermetallic compound (Z
An r ₇ Ni ₁₀ ) grindstone was manufactured under the above conditions, and both the vapor-phase synthesized diamond thin film and the diamond sintered body sintered at an ultra-high pressure were polished at room temperature. The grindstone shape is also φ30 mm, using a milling machine as a processing device,
Polishing was performed for 1 minute at a rotation speed of the grinding wheel of 3,000 rpm. FIG. 1 shows the polishing result of the vapor phase synthetic diamond thin film. FIG. 1 is an optical micrograph (magnification × 625) of the surface of a vapor-phase synthetic diamond thin film after polishing. The black portions indicate unpolished diamond particles, and the gray to white portions indicate polished surfaces. In the figure, almost no step is found along the crystal grains, and it can be seen that the polishing of the diamond particle portion is progressing in a short time of one minute. FIG. 2 is an optical micrograph (magnification: 625) of a diamond sintered body sintered at an ultra-high pressure after polishing. Similarly, black portions indicate unpolished portions of diamond particles, and gray to white portions indicate polished surfaces. In the figure, almost no steps are found along the crystal grains, and it can be seen that the polishing is progressing rapidly in a short time of one minute. In addition, the above-mentioned intermetallic compound whetstone exhibited extremely strong polishing ability, in which the whetstone was hardly worn and no cracks or cracks were generated even though polishing was performed at room temperature.

(Example 2) Next, an Nb-Co intermetallic compound (Nb ₆ Co ₇ ) grindstone was manufactured under the above conditions using Nb instead of Zr, and sintered with a vapor-phase synthetic diamond thin film at an ultra high pressure. Polishing was performed on both of the diamond sintered bodies at room temperature. Polishing conditions were the same as in Example 1, with a grindstone shape of φ30 mm, and polishing was performed for 1 minute at a rotation speed of the grindstone of 3,000 rpm using a milling machine. In FIG.
The optical microscope photograph (magnification x625) of the diamond sintered compact sintered at ultra high pressure after polishing is shown. Black portions indicate unpolished portions of the diamond particles, and gray to white portions indicate polished surfaces. Similarly to the above, it can be seen that polishing of the diamond particles progresses rapidly in a short time of one minute. Although not shown, the polishing result of the vapor-phase synthetic diamond thin film also showed an excellent polishing result in which the polishing of diamond proceeded in as little as one minute as in Example 1. Further, an Nb-Al intermetallic compound (Nb ₂ A
l) A grindstone was manufactured and polished at room temperature for both a vapor-phase synthetic diamond thin film and a diamond sintered body sintered at an ultra-high pressure, but the Nb-Co intermetallic compound (Nb
₆ Co ₇ ) A result similar to that obtained by polishing with a grindstone was obtained. As described above, the intermetallic compound grindstone of the present embodiment is:
Despite being polished at room temperature, the grinding wheel exhibited extremely strong polishing ability with little wear and no cracks or cracks.

[0035] Next (Example 3), Ni-Nb intermetallic compound (Ni 3 _Nb) grindstone manufactured in the above conditions, for both gas phase synthesized diamond thin film and an ultra high pressure sintered diamond sintered body Then, polishing was performed at room temperature. Polishing conditions were the same as in Example 1, with a grindstone shape of φ30 mm, and polishing was performed for 1 minute at a rotation speed of the grindstone of 3,000 rpm using a milling machine. FIG. 4 shows an optical microscope photograph (magnification × 625) of the vapor-phase synthetic diamond thin film after polishing. Black portions indicate unpolished portions of the diamond particles, and gray to white portions indicate polished surfaces. Similarly to the above, it can be seen that polishing of the diamond particles progresses rapidly in a short time of one minute. Also in the polishing result of the ultra-high pressure diamond sintered body, an excellent polishing result in which the polishing of the diamond proceeds in a short time of one minute as described above was obtained (not shown). As described above, the intermetallic compound grindstone of this example exhibited extremely strong polishing ability, with little wear of the grindstone and no generation of cracks or cracks, even though polishing was performed at room temperature.

Example 4 Next, a Ti—Pt intermetallic compound (Ti ₃ Pt) and a Ta—Ru intermetallic compound (TaR
u) A grindstone was manufactured under the same conditions as described above, and both the vapor-phase synthetic diamond thin film and the diamond sintered body sintered at an ultra-high pressure were polished at room temperature. Polishing conditions were the same as in Example 1, with a grindstone shape of φ30 mm, and polishing was performed for 1 minute at a rotation speed of the grindstone of 3,000 rpm using a milling machine. As for the polishing performance, good results were obtained as in the case of the intermetallic compound grindstone used in the present embodiment. As mentioned above,
The intermetallic compound whetstone of the present example exhibited extremely strong polishing ability, in which the whetstone was hardly worn and no cracks or cracks were generated even though polishing was performed at room temperature. Further, other platinum group elements of Rh, Pd, Os, and Ir, and T
It was confirmed that similar results were obtained also in combination with the group of i, Zr, Hf, V, Nb, Mo, Ta, and W. The use of a whetstone made of a platinum group element is particularly effective when it is difficult to mix impurities into the object to be polished.

(Example 5) Next, a Ti-Ni intermetallic compound
(TiNi) and Nb-Co intermetallic compound (Nb ₆Co
₇) Is manufactured under the above conditions.
And diamond die sintered with ultra-high pressure
Polishing at room temperature for both of the sintered diamonds
Was. The grinding wheel shape is also φ30mm, and as a processing device
Using a milling machine, the rotation speed of the grindstone is 3,000 rpm
Then, polishing was performed for one minute. Fig. 5 shows the sintering at ultra high pressure.
The polishing result of a diamond sintered compact is shown. FIG. 5 shows the state after polishing.
Optical micrograph of a diamond sintered body (magnification x 625)
It is. Black areas indicate unpolished diamond particles,
The color portion to the white portion indicate the polished surface. One minute
Polishing of diamond particles progresses in a very short time
You can see that In addition, the drop of diamond abrasive grains (black
Part) was confirmed to be extremely small. Although not shown,
Same as above for polishing of vapor-phase synthetic diamond thin film
In just a minute, the diamond particles
Polishing progressed. Polishing performance is the same as in the previous embodiment.
Good results were obtained.

Example 6 Next, a Ti-Al intermetallic compound (TiAl) and a Ti-Cr intermetallic compound (TiC
r ₂ ) and a composite intermetallic compound wheel composed of Zr—Co intermetallic compound (ZrCo ₂ ), and a Ti—Ni intermetallic compound (TiNi) and a Zr—Ni intermetallic compound (Zr ₇₎
A composite intermetallic compound grindstone made of Ni ₁₀ ) was manufactured under the above conditions, and both the vapor-phase synthetic diamond thin film and the diamond sintered body sintered at an ultra-high pressure were polished at room temperature. The grindstone shape is also φ30 mm, and a milling machine is used as a processing device.
The polishing was performed at m for 1 minute. Although not shown, in the polishing of the vapor phase synthetic diamond thin film, the polishing of the diamond particle portion progressed in a short time of one minute in the same manner as described above. As to the polishing performance, good results were obtained as in the present embodiment.

Example 7 Next, an intermetallic compound (composite of metal) composed of Ti-Al intermetallic compound (TiAl) -2Cr (metal) and Nb-Co intermetallic compound (Nb ₆ Co ₇ ) was prepared. A grindstone was manufactured under the above conditions, and both the vapor-phase synthetic diamond thin film and the diamond sintered body sintered at an ultra-high pressure were polished at room temperature. Similarly, the shape of the grindstone was set to φ30 mm, and polishing was performed for 1 minute at a rotation speed of the grindstone of 3,000 rpm using a milling machine as a processing device. FIG. 6 shows the polishing result of the diamond sintered body sintered at an ultra-high pressure. FIG. 6 is an optical micrograph (magnification × 625) of the diamond sintered body after polishing. The black portions indicate unpolished diamond particles, and the gray to white portions indicate polished surfaces. It can be seen that the polishing of the diamond particle portion and the like (including the sintering aid portion) proceeds in a short time of one minute. As for the polishing performance, good results were obtained as in the case of the intermetallic compound grindstone used in the present embodiment. Although not shown, in the polishing of the vapor phase synthetic diamond thin film, the polishing of the diamond particle portion progressed in a short time of one minute in the same manner as described above. As to the polishing performance, good results were obtained as in the present embodiment.

In recent years, by utilizing the high sound velocity of a diamond thin film, ZnO
The use of a diamond thin film surface acoustic wave device in which a film or the like is formed and a comb-shaped electrode is arranged as a high-frequency band filter or an optical communication timing clock in GHz band communication has been studied. The step of the processed surface is 0.02 to 0.04 μm or more, and such a large step of the diamond film surface is as follows:
This has caused variations in the inter-electrode distance or instability of the operation of the piezoelectric thin film including the electrodes, leading to performance degradation and variations in the surface acoustic wave device. However,
As shown in the above examples, the diamond thin film polished body after polishing by the grindstone of the present invention has a very small step at the boundary between crystal grains, and is extremely effective as a sliding material under a high load or as a surface acoustic wave device. is there.

Comparative Example 1 As a comparison, a diamond thin film was polished at room temperature using a Ti-6 wt% Al-4 wt% V alloy having extremely high strength and toughness. In this case, a molten product was used for the Ti-6 wt% Al-4 wt% V alloy. Polishing was performed at a grinding wheel rotation speed of 3000 rpm for 5 minutes. As a result, Ti-6 wt% Al-4w
The t% V alloy adhered to the surface of the diamond and the alloy was only rapidly worn away, but the diamond film could not be polished at all. Thus, it was confirmed that diamond could not be polished with an alloy composition containing only Ti and Al.

(Eighth Embodiment) In the first embodiment, a diamond self-solid (500 μm thick) having coarse crystal grains, which is considered to be difficult to polish, is subjected to 200 ° C., 300 ° C.
400 ° C, 500 ° C, 600 ° C, 700 ° C, 8
Polishing was performed at each temperature of 00 ° C. by changing the pressing pressure, the number of revolutions of the lathe, and the polishing time. As a result, polishing was facilitated by heating. However, when the temperature is lower than 100 ° C., the toughness of the intermetallic compound disc decreases, and cracks occur in the wheel. Thus, it has been found that diamond having such a large crystal grain size has poor polishing properties at temperatures lower than this temperature. On the other hand, when the temperature exceeds 800 ° C., cracks and cracks are liable to occur in the diamond, which is not preferable. A more preferred range for the heating temperature condition is 30.
0 to 500 ° C.

In particular, at the temperature of 300 to 500 ° C., cracks and cracks do not occur in the intermetallic compound whetstone, the strength and hardness can be maintained at a high level, and quick polishing with stable quality is possible. It was confirmed that the conditions were extremely suitable, that is, the wear was small. At the point of contact between the diamond and the grindstone, the frictional heat and external heating raise the temperature considerably, but in such a situation, chemical polishing occurs due to the formation of carbides and carbonitrides, making it more effective. It is presumed that diamond polishing is in progress. Further, it was found that this temperature range did not damage the diamond and was an excellent condition in each case.

As described above, heating during polishing of diamond is particularly important for a diamond film having a thickness of several tens of microns or more. Generally, in a diamond film of several tens of microns or more, as the film grows, crystal grains having different crystal orientations of several microns to several tens of microns are formed on the film surface,
Intense irregularities are formed between these crystal grains. In the case of the diamond having a thickness of 500 μm, the crystal irregularities on the film surface were about several tens μm. In the polishing of such a diamond film, uneven tensile and compressive strains occur in the grinding surface of the grindstone, and provide many starting points of brittle mode fracture in the grindstone. And, in this case, when the polishing is performed at room temperature, the wear of the grindstone becomes intense, and a minute crack is generated in the grindstone due to the severe unevenness as described above, and they are enlarged as the polishing progresses and may be broken during the polishing process. is there. The heating of the polishing section has a feature that such a fracture starting point can be slowed down.

In this embodiment, a gas burner is used as a method for heating the polishing section. However, other heating methods can be used. In particular, direct current heating, RF induction heating, and the like to the grindstone are effective. In addition, as described above, since the polishing process of the present invention is a method in which a grindstone is brought into contact with a diamond film for processing, frictional heat is naturally generated at a contact portion. Therefore, the heating operation of the grindstone or the like is determined in consideration of the combined heat of the external heating and the frictional heat. If the pressing pressure or the number of rotations of the grinding wheel is large, excessive force is applied to each other, and the diamond or the grinding wheel may be damaged. However, this condition can be arbitrarily changed as necessary, and particularly, the fixed limitation is applied. It is not a requirement. In addition, the polishing time can be appropriately changed, but when using the grindstone of the present invention,
Since the polishing can be efficiently performed in a short time, the length of the polishing time does not particularly matter.

(Friction / Wear Test) The diamond polished body obtained in Example 1 and a 500 μm-thick polycrystalline diamond film produced under the same conditions as those described above were prepared by using a conventional diamond grindstone without removing the substrate. Using the polished one as a comparative material, both friction and wear tests were performed. The friction and wear tests were performed using rod-shaped single-crystal diamond pins (radius of curvature R = 0.025 mm,
0.25mm) and pin-on
A friction and wear test of the disk was performed. According to the measurement before the test, the average polishing step at the grain boundary of the diamond polished body of the comparative material was 0.12 μm, and the grain boundary of the diamond polished body obtained in Example 1 was 0.12 μm. The average step height of the polished surface was 0.03 μm. For each of the above, when the load and the average dynamic friction coefficient were compared and measured at a stable value near a slip distance of 500 m, all showed a low value of 0.02 to 0.03. However, as the load increases, the comparative material has a pin curvature radius of R = 0.0
In the case of 25 mm, the maximum roughness of the processed surface body after friction increased rapidly, and when the load was 1.96 N, the surface roughness Ry exceeded 1 μm. Observation of the wear surface of this comparative material with a laser microscope confirmed that pin wear particles were present on both sides of the wear mark, and that the surface of the machined surface was increased with an increase in load (increase in Hertz maximum contact pressure). The wear rate also increased sharply.

On the other hand, in the same test result of the diamond-polished body obtained in Example 1, the pin radius of curvature was R =
At 0.025 mm and a load of 1.96 N, the surface roughness Ry maintains the initial roughness, and the wear rate is 4.0 × 10 4.
^It showed a very small value of ⁻¹² mm ³ / mm or less. From the above, it is shown that under the Hertz maximum contact pressure, cracks partially propagate at the stepped portion of the machined surface, and wear progresses. As described above, in the friction and wear test, it can be seen that the step of the polished surface at the boundary of the crystal grain of the diamond polished body has a strong influence. As described above, in the present invention, a polished diamond step having a polished surface step of 0.1 μm or less can be realized, a low friction coefficient, a long-term highly reliable friction behavior, and a stable under severe conditions. It has low wear characteristics and has a very high value of use in engineering and medicine, such as ultra-precision mechanical parts, artificial joints, dental parts, etc.

(Comparative Example 2) Next, a cemented carbide (WC + 16
% Co), grinding was carried out under the same conditions as in the above example, using a diamond self-solid. As a result, in heating at a temperature of 100 to 800 ° C.,
No polishing was possible. That is, the result was that the grindstone was shaved in reverse. Therefore, the temperature is further increased to 1000 ° C.
After polishing, the diamond film was partially polished in the initial stage of polishing, and the diamond film was polished. However, the polishing grindstone was softened, and subsequent polishing was not possible.

Comparative Example 3 Outer Diameter φ204 mm × Thickness 5 m
Polishing was performed at room temperature with a surface grinder using a similar diamond self-solid using the outer periphery of a m-disk SUS304 stainless steel grindstone. The tip width of the disk around the grindstone is formed to a thickness of 0.1mm, and the rotation speed is 5,000rpm
And Under the above conditions, polishing was performed for about 20 seconds while changing the forcible cut amount in the Z direction. Maximum load is 250
At kg / cm ² or less (reaction force of 3 kgf in the Z direction), the diamond was not polished but only the grinding stone. When the maximum load was set to 540 kg / cm ² (reaction force in the Z direction: 8 kgf), the diamond was polished while generating sparks. However, the grindstone component was firmly welded to the polished portion, and this welded material was easily removed even with strong acid. could not. In each of the above cases, cracks occurred in the diamond body. In order to further improve the polishing ability, the grindstone was heated to about 1000 ° C. and polished. This slightly accelerated the polishing of the diamond, but the welding of the grindstone components became more intense, and the diamond body was damaged in all the heat polishing tests. A constant pressure incision polishing test using the end face of the above-mentioned disk grindstone was also performed, but the polishing results were the same.

Since the above-mentioned grindstone has a large thermal expansion, the more it is heated to a high temperature, the more the polishing contact position is changed due to a slight temperature change during the processing, so that the polishing is not stabilized. Causes destruction inside. In addition, cracks occur due to thermal shock to diamond,
Others break and cannot be polished. Almost the same results were obtained using other cemented carbides or hard or soft metal grinding wheels. As described above, it was not possible to find, from the existing materials, a material having inferior abrasiveness as compared with the grindstone of the present invention and having the same polishing characteristics as the grindstone of the present invention.

(Comparative Example 4) Diamond self-solid (500
(thickness: μm) was brought to room temperature without external heating, and polishing was performed using the intermetallic compound grindstone of Example 1. As a result,
Cracks and cracks occurred in the intermetallic compound grindstone, and rather, the intermetallic compound grindstone was polished by a diamond film having severe irregularities. From the above, the crystal grain size is ~ 10μ
m or more, especially in the case of a diamond thick film of several tens of μm or more, irregularities of several μm to several tens of μm were generated between crystal grains having different crystal orientations on the film surface as the film grew, but this was at room temperature. It turned out that polishing was difficult. Therefore, it has been found that external heating is effective when the state of the crystal plane of the diamond, that is, when the crystal grains are coarsened and the unevenness of the film surface is remarkable.

Example 9 Next, using the intermetallic compound whetstone of Example 1, natural diamond was polished. Natural 1
The b-type rhombohedral dodecahedral diamond single crystal was fixed with a fixing jig, and the (111) plane was polished at room temperature with the plane orientation specified. Polishing was performed at a rotation speed of the grindstone of 2,250 rpm and a polishing time of 3 minutes. As a result, it was extremely difficult to polish the diamond single crystal (1
11) The surface was polished well.

(Example 10) Similarly, using the intermetallic compound grindstone of Example 1 and using Ni and TiC as binders, a diamond sintered body sintered at an ultra-high pressure was polished. Using a milling machine as a processing device, the grindstone was polished at a rotational speed of 2,250 rpm for 30 minutes at room temperature. As a result, both the diamond particle portion and the binder portion were successfully polished in a short time of 30 minutes. When the roughness was examined after this polishing, almost no step was found at the boundary between the diamond particles and the binder, and it was found that a very excellent polished surface having a surface roughness of 0.5 μm or less was obtained. Although Ni and TiC were used as the binder for the diamond sintered body of the present example, similar results were obtained when other binders were used. In this example, the intermetallic compound whetstone of Example 1 was used as a whetstone, but similar results were obtained with other whetstones of the present invention.

(Example 11) Next, diamond abrasive grains were mixed with the intermetallic compound of Example 1 of the present invention to prepare an intermetallic compound / diamond composite grindstone. Polishing of the diamond sintered body was performed. The intermetallic compound / diamond composite whetstone was prepared by mixing the intermetallic compound of Example 1 with 15 vol% (vol%) of # 325/400 mesh diamond abrasive grains, and
m was integrally sintered on the outer periphery of the grindstone. A drilling machine is used as the processing device, and the rotation speed of the grindstone is 3,000 rpm.
Was polished. For comparison, the same polishing was performed using a metal bond diamond grindstone conventionally used.
The polishing efficiency is remarkably higher in the case of the intermetallic compound / diamond composite whetstone of this embodiment. Further, no damage such as cracking or chipping of the diamond thin film and the diamond sintered body was observed at all. On the other hand, in the conventional polishing using a metal-bonded diamond grindstone, the diamond thin film and the diamond sintered body have cracks, and the grindstone itself has chipped damage. According to this example, a remarkable effect of the intermetallic compound / diamond composite grindstone was confirmed.

The above composite intermetallic compound (including simple metal)
The manufacture of a grinding wheel consisting of a single wheel of each component may be manufactured as a starting material, or a powder of a predetermined intermetallic compound may be manufactured in advance, and then mixed and sintered to manufacture a grinding wheel. Can also. In many of the examples, polishing was performed at room temperature. However, polishing can be performed by appropriately heating as described above. The polishing performance is further improved by this heating. However, when heating is not particularly required or when heating is not desired due to the material to be polished, it can be carried out at room temperature. The whetstone of the present invention is preferably manufactured by powder metallurgy because the components can be easily adjusted, there is no segregation, and no coarse crystals are formed, but a melting method can be used because of the ease of manufacturing. The method for manufacturing the grinding wheel is not particularly limited, and can be appropriately selected depending on the application. In the above embodiment, a relatively simple component composition is exemplified. However, in addition to the intermetallic compound, a simple metal may be included (composite), or may be composited with a diamond grindstone, or a ceramic may be composited. Can also. The present invention includes all the wheels that have a function as a grindstone and that use the main grindstone as a part of the grindstone.

[0056]

As described above, according to the present invention, Ti, Z
one or more powders selected from the group consisting of r, Hf, V, Nb, Mo, Ta, W, and Al, Cr, Mn, Fe,
Co, Ni, Cu, Ru, Rh, Pd, Os, Ir, P
One or two or more powders selected from the group of t are used with a grindstone prepared in a composition and a ratio capable of forming the intermetallic compound of the present invention, respectively. Single-crystal diamond, diamond thin film or diamond free-standing film formed on substrate by vapor phase synthesis by pressing against diamond, which is the object to be polished that rotates or moves relatively while heating It has an excellent effect that it can be polished at a low temperature without causing cracks, breakage or deterioration of quality on a body or other polycrystalline diamond. In addition, the life of the grindstone can be greatly extended, stable polishing performance can be maintained, and a conventional polishing device such as surface grinding can be used, and the three-dimensional diamond film-coated member can be efficiently polished. Features that can be performed. In polishing single-crystal diamond, high hardness (11
1) The surface has a remarkable feature that a surface can be easily polished, and a high-performance single crystal diamond utilizing the same surface characteristics having excellent hardness and thermal conductivity can be obtained. Further, the present invention has an effect that a diamond sintered body generally used as a tool material for polishing or grinding, or as a material for various wear-resistant mechanisms or as an electronic component can be easily polished. Also,
The present invention makes it possible to obtain a polished body excellent in shape accuracy with a remarkably small crystal grain boundary step on the polished diamond polished surface. It has a remarkable effect that it can be done.

[Brief description of the drawings]

FIG. 1 is an optical microscope photograph (magnification × 625) of a surface of a vapor-phase synthetic diamond thin film after polishing using a Zr—Ni intermetallic compound (Zr ₇ Ni ₁₀ ) grindstone.

FIG. 2 is an optical micrograph (magnification: 625) of a diamond sintered body after polishing using the grinding wheel according to the first embodiment.

FIG. 3 is an optical micrograph (magnification: 625) of a diamond sintered body after polishing using an Nb—Co intermetallic compound (Nb ₆ Co ₇ ) grindstone.

FIG. 4 is an optical micrograph (magnification × 625) of a vapor-phase synthetic diamond thin film after polishing using a Ni—Nb intermetallic compound (Ni ₃ Nb) grindstone.

FIG. 5: Ti—Ni intermetallic compound (TiNi) and Nb—
It is Co intermetallic compound optical micrograph of a diamond sintered body after polishing using the grindstone of a composite intermetallic compound consisting of (Nb 6 _{Co 7)} (magnification × 625).

FIG. 6: Ti-Al intermetallic compound (TiAl) -2Cr
(Metal) and Nb-Co intermetallic compound _(Nb 6 _Co 7)
Micrograph (magnification × 62) of a diamond sintered body after polishing using a composite metal-intermetallic compound grindstone composed of
5).

 ──────────────────────────────────────────────────続 き Continued on the front page (71) Applicant 399007165 Applied Diamond Co., Ltd. 1-32-32 Hyugaoka, Hiratsuka-shi, Kanagawa (74) The above three agents 100093296 Patent Attorney Isamu Kogoshi (72) Inventor Toshihiko Abe 4-2-1, Kushitake, Miyagino-ku, Sendai City, Miyagi Prefecture (72) Inventor Hashimoto et al. 4-2-1, Kushitake, Miyagino-ku, Sendai City, Miyagi Prefecture Tohoku Industrial Research Institute (72) Shuichi Takeda 1-32-32 Hyugaoka, Hiratsuka-shi, Kanagawa F-term (reference) Worked product, single crystal diamond, sintered diamond and diamond Composite grindstone and the grindstone segments polishing

Claims (16)

[Claims] 1. An Al, Cr, Mn, Fe, Co, Ni,
One or more elements selected from the group of Cu and Z
A grindstone for diamond polishing comprising as a main component an intermetallic compound with one or more elements selected from the group consisting of r, Hf, V, Nb, Mo, Ta and W. 2. Al, Cr, Mn, Fe, Co, Ni,
2. The composition according to claim 1, further comprising an intermetallic compound of one or more elements selected from the group consisting of Cu, Ru, Rh, Pd, Os, Ir, and Pt and a Ti element as a main component. The grinding wheel for diamond polishing described. 3. One or more elements selected from the group consisting of Ru, Rh, Pd, Os, Ir, and Pt, and Ti, Z
A grindstone for diamond polishing comprising as a main component an intermetallic compound with one or more elements selected from the group consisting of r, Hf, V, Nb, Mo, Ta and W. 4. Al, Cr, Mn, Fe, Co, Ni,
One or more elements selected from the group of Cu and T
4. The composition according to claim 3, further comprising an intermetallic compound with one or more elements selected from the group consisting of i, Zr, Hf, V, Nb, Mo, Ta, and W as a main component.
The grinding wheel for diamond polishing described. 5. The grinding wheel for diamond polishing according to claim 1, wherein the content of the intermetallic compound is 90% by volume or more. 6. The diamond grinding wheel according to claim 1, wherein a part or all of the grinding wheel is the intermetallic compound.
5. The grinding wheel for diamond polishing according to any one of to 5. 7. When polishing diamond with a grindstone containing the intermetallic compound as a main component according to any one of claims 1 to 6, polishing is performed while heating the polishing portion to 100 to 800 ° C. Diamond polishing method. 8. The diamond polishing method according to claim 7, wherein the polishing section is heated to 300 to 500 ° C. 9. The diamond polishing method according to claim 7, wherein the content of the intermetallic compound is 90% by volume or more. 10. A diamond-polished body polished with a diamond-grinding grindstone containing the intermetallic compound according to claim 1 as a main component. 11. A step at a crystal grain boundary portion of a polished surface of a diamond film after a polishing process has a diamond film thickness of 300 μm.
0.1 μm or less when the thickness exceeds 300 m, and the thickness is 300
The diamond-polished body according to claim 10, wherein the diameter is 0.02 μm or less when the diameter is not more than μm. 12. A single crystal diamond polished with a diamond polishing grindstone containing the intermetallic compound according to claim 1 as a main component. 13. The single crystal diamond according to claim 12, wherein the polished surface is a (111) plane. 14. A diamond sintered body characterized by being polished with a diamond polishing whetstone containing the intermetallic compound according to claim 1 as a main component. 15. The diamond sintered body according to claim 14, wherein the surface roughness after polishing is 0.5 μm or less. 16. A composite whetstone for diamond polishing and a whetstone segment, wherein the intermetallic compound according to claim 1 is combined with diamond abrasive grains, cemented carbide or ceramics.