JP2001196429A - Yield control system and device as object thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable statistical processing to be accurately and easily carried out. SOLUTION: A quantitative element analysis of foreign matter and defective portion of an object is carried out (steps S2 and S4), elements meeting decision conditions are selected out from the analysis result (step S5), the names of the selected elements are registered in a defect database(DB) lined with information on the foreign matter and defective portion (step S6). The registered names of elements are statistically processed, by which a statistical processing result as accurate as that based on a qualitative analysis can be obtained without a complicated computational processing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a yield management system for managing the yield of products such as semiconductor devices, liquid crystal panels, and PDPs (plasma displays), and a device targeted by the system.
The present invention relates to an improvement for enabling accurate and simple statistical processing.

[0002]

2. Description of the Related Art FIG. 11 is a block diagram showing a conventional yield management system. This yield management system 15
0 indicates that the semiconductor device is to be processed. The yield management system 150 includes a particle / pattern defect inspection apparatus 91, a defect database 92, and an X-ray microanalysis (XMA).
An analysis device 93 and an information transmission path 94 are provided. The foreign substance / pattern defect inspection apparatus 91 includes a foreign substance inspection apparatus and a pattern defect inspection apparatus (not shown).

FIG. 12 is a flowchart showing a procedure of processing by the yield management system 150. When the process by the yield management system 150 is started, first, the process of step S91 is performed. Step S91
First, the foreign substance / pattern defect inspection apparatus 91 inspects a semiconductor device as an inspection target, and outputs foreign substance information and defect information expressing the result. The foreign substance information and the defect information are coordinate values, sizes,
Includes classification codes. The foreign material information and defect information (collectively referred to as “foreign material / defect information”)
4, obtained by the defect database 92,
Will be retained.

In step S92, first, the XMA
The analyzer 93 reads out the foreign substance / defect information from the defect database 92. The XMA analyzer 93 may directly acquire the foreign substance / defect information from the foreign substance / pattern defect inspection apparatus 91 instead of reading the foreign substance / defect information from the defect database 2.

[0005] Next, the XMA analyzer 93 moves the stage based on the coordinate values, thereby navigating the foreign matter / defect to the analysis site, and XMA of the foreign matter / defect.
Perform analysis. FIG. 12 shows an example of the XMA analysis result on the right side of the explanation section of step S92. As a result of the XMA analysis, a spectrum is obtained in which the horizontal axis represents X-ray energy and the vertical axis represents X-ray intensity.

In step S93, the XMA analyzer 93 qualitatively analyzes the XMA analysis result. FIG. 12 shows an example of the qualitative analysis result on the right side of the explanation section of step S93. From the peak position of the spectrum, it is possible to judge what kind of element has been detected. In the example of FIG. 12, Al, Si, Ti, and Cu are detected by qualitative analysis.

In the next step S94, the XMA analyzer 93 quantitatively calculates the XMA analysis result. FIG.
An example of the quantitative calculation result is shown on the right of the explanation part of step S94. The peak intensity of the spectrum indicates the abundance of the element, and the abundance of the detected element can be evaluated based on the peak intensity. In the example of FIG. 12, Al _0.123 Si _0.254 Ti _0.087
The chemical formula of Cu _0.536 has been obtained.

Finally, in step S95, XMA
The analyzer 3 registers the analysis result in the defect database 92 through the information transmission path 94. The registered analysis results are
The spectral image information obtained in step S92, the qualitative analysis result obtained in step S93, and
Any or all of the quantitative calculation results obtained in 94. If the spectral image information is to be registered, the defect database 92 stores the image information in a form linked to the foreign substance information or the defect information so that the image can be displayed in response to a later request. .

When the result of the qualitative analysis is to be registered, the defect database 92 stores the element names included in the result of the qualitative analysis in a state linked to the foreign substance information or the defect information. In addition, the distribution of elements detected in the main surface of the semiconductor wafer can be displayed. In addition, when the quantitative analysis result information is to be registered, the defect database stores the quantitative analysis result linked to the foreign matter or defect information so that the quantitative analysis result can be displayed according to a later request. I have to.

Since the yield management system 150 is configured and operates as described above, the yield management system 150 uses the registered information to perform statistical processing such as tracking the presence or absence of a foreign substance or a defect in a time series. Is also possible. Since statistical processing cannot be performed using image information, a qualitative analysis result or a quantitative calculation result is used to perform statistical processing.

[0011]

However, in the statistical processing based on the qualitative analysis results, the elements to be detected depend on the measurement conditions. Therefore, even if the same amount of elements is present, detection is not possible under certain measurement conditions. However, detection may not be performed under another condition, and there is a problem that an accurate processing result cannot be obtained. Further, in the statistical processing based on the quantitative analysis result, there is a problem that a complicated calculation processing is required because the quantitative analysis result is not in a format suitable for the statistical processing. That is, the conventional yield management system has a problem in that statistical processing cannot be performed accurately and easily.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in a conventional system, and a yield management system capable of performing accurate and simple statistical processing. The purpose is to obtain a device that is processed as a product.

References that disclose techniques related to the present invention include Japanese Patent Application Laid-Open Nos. 11-214462 and 8-124982.
And Japanese Patent Application Laid-Open No. 10-221040 are known.

[0014]

A system according to a first aspect of the present invention is a yield management system, which inspects the surface of an object and outputs information representing a foreign substance / defect area where a foreign substance or defect exists. An inspection device for outputting, and an analysis device for quantitatively performing elemental analysis on the foreign matter / defect portion of the object based on the information, and selecting and outputting an element name satisfying a determination condition from the result of the elemental analysis. And a first storage device for storing the information representing the element name and the corresponding foreign substance / defect site in a linked manner.

According to a second aspect of the present invention, in the yield management system according to the first aspect, the determination condition is that the abundance of the element exceeds a predetermined threshold.

According to a third aspect of the present invention, in the yield management system according to the second aspect, the threshold value is individually given for each element.

According to a fourth aspect of the present invention, in the yield management system according to the second or third aspect, a plurality of the threshold values are provided for the same element, and the analysis device includes the plurality of threshold values. For each of the thresholds, an element name whose abundance exceeds the threshold is output.

The system according to a fifth aspect of the present invention comprises the first to fourth systems.
In the yield management system according to any one of the first to third aspects of the present invention, the yield management system further includes a second storage device that stores information indicating a relationship between the amount of the element and the conductor and the nonconductor, and the analyzer further includes the second storage device. (2) outputting, based on the information stored in the storage device and the result of the elemental analysis, information representing whether the corresponding foreign matter / defect site is a conductor or a non-conductor, The apparatus further stores the information representing whether the foreign matter / defect part is a conductor or a non-conductor, linked to the information representing the corresponding foreign matter / defect part.

According to a sixth aspect of the present invention, in the yield management system according to any one of the first to fifth aspects,
The analysis device further includes, based on the information output by the inspection device, a portion that is equivalent to the foreign matter / defect portion in the structure of the target object and is a portion where the foreign matter and the defect do not exist. The elemental analysis in the part is quantitatively performed, and from the result of the elemental analysis, an element name that satisfies another determination condition is selected and output, and the first storage device further stores the information representing the foreign matter / defect part. The element names output for the corresponding reference sites are linked and stored.

A system according to a seventh aspect of the present invention includes the first to fifth systems.
In the yield management system according to any one of the first to third aspects of the present invention, the yield management system may further include a third storage device configured to store information defining a manufacturing process of the object, and the analyzer may further include the foreign matter in the foreign matter / defect portion. The result of the elemental analysis when there is no defect is calculated as the result of the elemental analysis at the reference portion based on the information stored in the third storage device, and another determination condition is satisfied from the result of the elemental analysis. An element name is selected and output, and the first storage device further stores the element name output for the corresponding reference portion linked to the information expressing the foreign matter / defect portion.

According to an eighth aspect of the present invention, there is provided an apparatus which is set as the object by the yield management system according to any one of the first to seventh aspects.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG. 1 is a block diagram showing a yield management system according to a first embodiment. The yield management system 101 processes semiconductor devices. The yield management system 101 includes a foreign matter / pattern defect inspection apparatus 1, a defect database 2, an X-ray micro-analysis (XMA) analysis apparatus 3, and an information transmission path 4. The foreign substance / pattern defect inspection apparatus 1 includes a foreign substance inspection apparatus and a pattern defect inspection apparatus (not shown). In addition, the XMA analyzer 3 includes an analysis processing unit 5. The analysis processing unit 5 converts the result of the quantitative calculation obtained by the XMA analyzer 3 so as to be suitable for statistical processing. The defect database 2 is a storage device,
Foreign matter / pattern defect inspection device 1 and XMA analysis device 3
Stores the information sent from.

FIG. 2 is a flowchart showing a procedure of processing by the yield management system 101 according to this embodiment. When the process by the yield management system 101 is started, first, the process of step S1 is performed. In step S1, first, the foreign matter / pattern defect inspection apparatus 1
Performs an inspection of a semiconductor device as an inspection target, and outputs foreign matter information and defect information expressing the result. The foreign substance information and the defect information are coordinate values indicating a position on the main surface of the semiconductor wafer with respect to the foreign substance and the defect, respectively.
Includes size, classification code, etc. That is, foreign matter information and defect information (collectively referred to as “foreign matter / defect information”)
Contains the coordinate value of the part where the foreign matter or defect exists (referred to as “foreign matter / defect part”). The foreign matter / defect information is acquired and held by the defect database 2 via the information transmission path 4.

In the following step S2, first, the XMA analyzer 3 reads out foreign matter / defect information from the defect database 2. The XMA analyzer 3 may directly acquire the foreign substance / defect information from the foreign substance / pattern defect inspection apparatus 1 instead of reading the foreign substance / defect information from the defect database 2. In this case, in step S1, the defect database 2
Need not acquire the foreign substance / defect information from the foreign substance / pattern defect inspection apparatus 1.

Next, the XMA analyzer 3 moves the stage based on the coordinate values, thereby navigating the foreign matter / defect to the analysis site, and performs the XMA analysis of the foreign matter / defect. FIG. 2 shows that X
9 shows an example of a result of MA analysis. As a result of the XMA analysis, a spectrum is obtained in which the horizontal axis represents X-ray energy and the vertical axis represents X-ray intensity.

In step S3, the XMA analyzer 3 qualitatively analyzes the XMA analysis result. FIG. 2 shows an example of the qualitative analysis result on the right side of the explanation section of step S3. From the peak position of the spectrum, it is possible to judge what kind of element has been detected. In the example of FIG. 2, Al, Si, Ti, and Cu are detected by qualitative analysis.

In the next step S4, the XMA analyzer 3 quantitatively calculates the XMA analysis result. FIG. 2 shows an example of the quantitative calculation result on the right side of the explanation section of step S4. The peak intensity of the spectrum indicates the abundance of the element, and the abundance of the detected element can be evaluated based on the peak intensity. In the example of FIG. 2, a chemical formula of Al _0.123 Si _0.254 Ti _0.087 Cu _0.536 is obtained by quantitative analysis.

In the following step S5, the analysis processing unit 5
Performs an analysis process of selecting an element name that satisfies the determination condition from the quantitative calculation result and outputting the element name as the determination result.

Finally, in step S 6, the XMA analyzer 3 registers the analysis result in the defect database 2 via the information transmission path 4. The analysis result includes the judgment result obtained in step S5, that is, the element name that satisfies the judgment condition. At this time, the defect database 2 stores the determination result linked to the foreign matter / defect information. This makes it possible to display the distribution of elements within the main surface of the semiconductor wafer or to perform statistical processing in response to a later request. As a statistical process, for example, a process of tracking the presence / absence of an element satisfying a determination condition in a time series with respect to a large number of semiconductor wafers to be successively put into a manufacturing process, that is, analyzing a temporal change of a foreign substance / defect. Processing becomes possible.

As described above, in the yield management system of the present embodiment, an element name satisfying a certain judgment condition can be obtained as an analysis result based on the quantitative calculation result.
Despite the presence of the same amount of elements, the disadvantage of statistical processing based on conventional qualitative analysis that detection was performed under certain measurement conditions and not detected under other conditions was eliminated, and conventional quantitative calculations were performed. It does not require complicated calculation processing as in the case of the statistical processing based on it. In other words, by performing statistical processing on the registered element names, it is possible to perform accurate calculations, as in statistical processing that relies on qualitative analysis, without the need for complicated calculation processing. Statistical processing results can be obtained.

Although the semiconductor device is processed in this embodiment, a flat panel such as a liquid crystal panel or a PDP can be processed. Further, in the present embodiment, the XMA analyzer 3 has been described as an example of the analyzer, but the present invention is not limited to this example. For example, XM
Instead of performing the analysis (elemental analysis) on the elements present on the surface of the object quantitatively, such as an Auger electron spectrometer, an infrared spectrometer, a Raman spectrometer, a secondary ion mass spectrometer, etc. in place of the A analyzer 3 It is also possible to use the device described above. The same applies to the other embodiments described below.

[Second Embodiment] A yield management system according to a second embodiment is represented by a block diagram in FIG. 1 similarly to the first embodiment. In the yield management system according to the present embodiment, in the flowchart of FIG.
The processing is performed according to the procedure replaced with step S5a in FIG.

In step S5a shown in FIG. 3, the analysis processing unit 5 outputs, as a determination result, an element name in which the amount of the element indicated by the quantitative calculation result exceeds a certain threshold (threshold). That is, step S5a is replaced with step S5 in FIG.
Corresponds to setting a condition that the amount of the element exceeds a certain threshold as the determination condition. For example,
The composition ratio is selected as the abundance of the element, and the threshold is 10
By setting the%, Al and S are determined as the determination results as illustrated on the right side of the explanation section of step S5a in FIG.
i and Cu are obtained. Step S6 executed thereafter
In FIG. 2, Al, Si, and Cu as determination results are:
The information is registered in the defect database 2 in a format linked to the foreign matter / defect information.

As described above, in the yield management system of the present embodiment, the abundance of elements is set as the threshold. Therefore, by using the registered element names, statistical processing relating to foreign matter / defects based on information as to whether or not an element exists beyond a certain level is accurately executed without requiring complicated calculation processing. It becomes possible.

[Third Embodiment] A yield management system according to a third embodiment is represented by a block diagram in FIG. 1 similarly to the first embodiment. In the yield management system according to the present embodiment, in the flowchart of FIG.
The processing is performed according to the procedure replaced with step S5b in FIG.

In step S5b shown in FIG. 4, the analysis processing unit 5 outputs, as a determination result, an element name whose quantity indicated by the quantitative calculation result exceeds a threshold value individually set for each element.
That is, step S5b corresponds to setting the condition that the amount of the element exceeds the threshold set for each element as the determination condition in step S5 of FIG. For example, the composition ratio is selected as the abundance of the element, and the threshold is 10% for Al, 20% for Si, T
By setting 5% for i and Cu, FIG.
As illustrated on the right side of the explanation section of step S5b, Al, Ti, and Cu are obtained as the determination results. In step S6 (FIG. 2) executed thereafter, Al, Ti, and Cu as the determination result are registered in the defect database 2 in a form linked to the foreign matter / defect information.

In general, the degree of influence on the electrical characteristics of a semiconductor device differs from element to element, but in the yield management system of the present embodiment, the threshold is set to a small value for elements that are likely to influence, The threshold value can be set according to the degree of the influence, for example, by setting the threshold value to a large value for an element that does not easily affect. Thereby, it is possible to easily perform more accurate statistical processing in consideration of the fact that the degree of influence on the characteristics of the processing target differs for each element based on the registered element names. .

[Fourth Embodiment] A yield management system according to a fourth embodiment is also represented by a block diagram in FIG. 1, similarly to the first embodiment. In the yield management system according to the present embodiment, in the flowchart of FIG.
The processing is performed according to the procedure replaced with step S5c in FIG.

In step S5c shown in FIG. 5, the analysis processing unit 5 outputs, as a determination result, an element name in which the amount of the element indicated by the quantitative calculation result exceeds each of a plurality of threshold values. That is, step S5c is replaced with step S5 in FIG.
Corresponds to setting a condition that the abundance of an element exceeds a plurality of thresholds as the determination condition. For example, adopting the composition ratio as the abundance of the element,
By setting 10% and 20% as the plurality of thresholds, as illustrated on the right side of the explanation part of step S5c in FIG. 5, Al, Si,
Cu is obtained, and Si, Cu
Is obtained. Step S6 executed thereafter (FIG. 2)
Then, (Al, Si, Cu) and (Si, Cu) as the determination results are registered in the defect database 2 in a form linked to the foreign matter / defect information.

As described above, in the yield management system according to the present embodiment, since a plurality of thresholds are set, quantitative information is added to the judgment result to be registered. Therefore, by using the registered judgment result for statistical processing, the statistical processing result including quantitative information can be
It can be obtained accurately without complicated calculation processing.

[Fifth Embodiment] FIG. 6 is a block diagram showing a yield management system according to a fifth embodiment. The yield management system 102 also processes semiconductor devices. The yield management system 102 is characteristically different from the yield management system 101 shown in FIG. 1 in that the yield management system 102 includes a conductor / non-conductor database 6 connected to an X-ray microanalysis (XMA) analyzer 3. The conductor / non-conductor database 6 holds determination information on conductors / non-conductors.

The yield management system according to the present embodiment
In the flowchart of FIG. 2, step S5 is replaced with FIG.
The processing is performed in accordance with the procedure replaced in step S5d.
In step S5d shown in FIG. 7, the analysis processing unit 5 selects an element name that satisfies the determination condition from the quantitative calculation result,
Analysis processing (processing in step S5 of the first embodiment) of outputting as a determination result is performed, and based on the analysis result, a foreign substance / defect portion (a target of quantitative calculation in the main surface of the semiconductor wafer) In other words, foreign matter / defect part targeted for XMA analysis, which is the basis of quantitative calculation)
Performs a determination process as to whether it is a conductor or a non-conductor.

This determination process is achieved by comparing the elements included in the quantitative calculation results with the determination information held in the conductor / non-conductor database 6. For example, when the result of the quantitative calculation is represented by the chemical formula of Al _0.123 Si _0.254 Ti _0.087 Cu _0.536 , none of the elements included in the chemical formula is a _{non-conductor} , and no oxygen element is detected. Is determined to be a conductor. For this purpose, the conductor / nonconductor database 6 holds information representing the relationship between the abundance (for example, composition ratio) of the element and the conductor / nonconductor as the determination information. Good.

More desirably, the conductor / non-conductor database 6 stores, for each element, the ratio between the conductor and the conductor with respect to the ratio of the abundance of the element to the abundance of oxygen (ie, the abundance of the element relative to oxygen). A threshold value separating the conductor is held as determination information. At this time, the analysis processing unit 5 calculates, as a so-called evaluation function, the ratio between the abundance of the element constituting the conductor having the largest detection amount and the abundance of oxygen among the elements included in the quantitative calculation result. If the evaluation function is greater than the threshold value for the element, the analysis processing unit 5 determines that the corresponding foreign substance / defect site is a conductor, and if not, determines that the corresponding foreign substance / defect is a nonconductor.

Step S6 executed thereafter (FIG. 2)
In the defect database, the names of elements satisfying the determination conditions and the information indicating whether the corresponding foreign matter / defect site is a conductor or a non-conductor are linked to the foreign matter / defect information as a determination result. Registered to 2.

As described above, in the yield management system according to the present embodiment, since information on conductors / non-conductors is added to the registered judgment results, the registered judgment results are used for statistical processing. Statistical processing results including information on conductors and non-conductors can be accurately obtained without requiring complicated calculation processing.

[Sixth Embodiment] A yield management system according to a sixth embodiment is represented by a block diagram in FIG. 1 similarly to the first embodiment. The yield management system according to the present embodiment performs processing according to the procedure shown in the flowchart of FIG.

When the process of FIG. 8 is started, first, the process of step S11 is performed. The processing in step S11 is
Since the process is the same as the process in step S1 (FIG. 2) of the first embodiment, a detailed description thereof will be omitted.

In step S12, first, the XMA
The analyzer 3 stores the foreign matter / defect information in the defect database 2
Read from The XMA analyzer 3 may directly acquire the foreign substance / defect information from the foreign substance / pattern defect inspection apparatus 1 instead of reading the foreign substance / defect information from the defect database 2. In this case, the defect database 2 need not acquire the foreign matter / defect information from the foreign matter / pattern defect inspection apparatus 1 in step S11.

Next, the XMA analyzer 3 moves the stage based on the coordinate values, thereby navigating the foreign matter / defect to the analysis site, and performs XMA analysis of the foreign matter or the defect. Subsequently, the XMA analysis device 3 navigates to a reference site having no foreign matter or defect, and performs XMA analysis of the reference site. As a reference part, in the design of a semiconductor device,
A site corresponding to the defective site, that is, a site equivalent to the foreign object / defect site in the structure of the semiconductor device and in which no foreign object / defect is detected is selected.

FIG. 8 shows an example of the XMA analysis result on the right side of the explanation section of step S12. As the XMA analysis result, spectra in which the horizontal axis represents the energy of X-rays and the vertical axis represents the X-ray intensity are obtained for both the foreign substance / defect part and the reference part.

In step S13, the XMA analyzer 3 qualitatively analyzes the XMA analysis result. FIG. 8 shows an example of the qualitative analysis result on the right side of the explanation section of step S13. In the example of FIG. 8, Al, Si, Ti, and Cu are detected in the foreign substance / defect part by the qualitative analysis, and Si is detected in the reference part.

In the next step S14, the XMA analyzer 3 quantitatively calculates the XMA analysis result. FIG. 8 shows an example of the quantitative calculation result on the right side of the explanation section of step S14. The peak intensity of the spectrum indicates the abundance of the element, and the abundance of the detected element can be evaluated based on the peak intensity. In the example of FIG. 8, the quantitative analysis shows that the foreign matter / defect site has Al _0.123 Si _0.254
A chemical formula of Ti _0.087 Cu _0.536 is obtained, and a chemical formula of Si is obtained at the reference portion.

In the next step S15, the analysis processing unit 5
Performs an analysis process of selecting an element name that satisfies the determination condition from the quantitative calculation result and outputting the element name as the determination result. At this time, analysis processing is performed on the quantitative calculation results for each of the foreign substance / defect part and the reference part. Also,
The determination condition for the quantitative calculation result of the foreign substance / defect part may be set in a format depending on the quantitative calculation result for the reference part.

Finally, in step S16, XMA
The analyzer 3 registers the analysis result in the defect database 2 through the information transmission path 4. The analysis result includes step S1
5, that is, the names of the elements satisfying the determination conditions for each of the foreign substance / defect part and the reference part are included. At this time, the defect database 2 stores
The judgment result is linked to the defect information and stored.

As described above, in the yield management system of the present embodiment, the judgment result to be registered includes the judgment result for the reference part. Therefore, by using the registered determination result in the statistical processing, a statistical processing result that also takes into account a reference portion where no foreign matter or defect exists can be accurately obtained without requiring complicated calculation processing.

[Seventh Embodiment] FIG. 9 is a block diagram showing a yield management system according to a seventh embodiment. This yield management system 103 also processes semiconductor devices. The yield management system 103 uses the information transmission path 4
The yield management system 101 shown in FIG. 1 is different from the yield management system 101 shown in FIG. 1 in that a layout information database 7 and a process information database 8 are connected to the XMA analyzer 3 and an analysis processing unit 15 is provided instead of the analysis processing unit 5. , Characteristically different.

The layout information database 7 holds the layout information created by CAD of the semiconductor device to be processed. The process information database 8 holds information on a manufacturing process of a semiconductor device to be processed, that is, process information. As described above, the layout information database 7 and the process information database 8 store information that defines a manufacturing process of a semiconductor device as a processing target.

The yield management system 10 according to the present embodiment
3 performs processing in accordance with the procedure shown in the flowchart of FIG. When the processing in FIG. 10 is started, first, the processing in step S21 is performed. The process in step S21 is the same as the process in step S1 (FIG. 2) of the first embodiment, and thus a detailed description thereof will be omitted.

In the next step S22, in the layout information and the process information on the semiconductor device to be processed, in other words, the semiconductor device to be inspected for foreign matter / defect by the foreign matter / pattern defect inspection apparatus 1, foreign matter is included. Information of a part (foreign matter / defect part) corresponding to the coordinate value included in the defect information is read from the layout information database 7 and the process information database 8, respectively. The layout information and the process information on the read foreign matter / defect portion are stored in the information transmission path 4.
Through the XMA analyzer 3.

In the following step S23, the analysis processing unit 1
5 calculates the result of the XMA analysis when there is no foreign matter / defect in the foreign matter / defect part based on the layout information and the process information related to the foreign matter / defect part. In general, although a semiconductor device has a complicated structure, layout information including information on various wiring layers or information on formation positions of holes connecting between the wiring layers, a material of each wiring layer, Based on the positional relationship between wiring layers, holes, and interlayer insulating films in the vertical direction (the direction perpendicular to the main surface of the semiconductor substrate), and process information including information such as pattern shapes in photolithography and etching processes, The structure of the semiconductor device can be determined.

Therefore, the structure of the semiconductor device at the portion of the foreign matter or defect indicated by the coordinate value can be determined based on the layout information and the process information. Below,
It is possible to calculate a quantitative analysis result expected when there is no foreign matter or defect. FIG. 10 shows an example of the calculated quantitative analysis result on the right side of the explanation section of step S23.

As shown in FIG. 10, in the present embodiment, a part corresponding to a foreign substance / defect part on the layout information and the process information is referred to as a “reference part” for convenience. In the example of FIG. 10, a chemical formula of Al _0.3 Si _0.5 Ti _0.2 is obtained as a result of the quantitative analysis on the reference portion.

In the next step S24, the XMA analyzer 3 moves the stage based on the coordinate values included in the foreign matter / defect information, thereby navigating the foreign matter / defect to the analysis site, and performs XMA analysis of the foreign matter / defect. I do. FIG. 10 shows that the XM
A shows an example of the analysis result.

In step S25, the XMA analyzer 3 qualitatively analyzes the XMA analysis result. FIG. 10 shows an example of the qualitative analysis result on the right side of the explanation section of step S25. In the example of FIG. 10, the qualitative analysis
Al, Si, Ti, and Cu are detected at the defect site.

In the next step S26, the XMA analyzer 3 quantitatively calculates the XMA analysis result. FIG. 10 shows an example of the quantitative calculation result on the right side of the explanation section of step S26. In the example of FIG. 10, by quantitative analysis, the foreign matter and defect _{site, Al 0. 123 Si 0.254 Ti 0.087} C
The chemical formula of u _0.536 has been obtained.

In the following step S27, the analysis processing unit 1
5 performs an analysis process of selecting an element name that satisfies the determination condition from the quantitative calculation result and outputting it as the determination result. At this time, analysis processing is performed on the quantitative calculation results for each of the foreign substance / defect part and the reference part. Further, the determination condition for the quantitative calculation result of the foreign substance / defect part may be set in a format depending on the quantitative calculation result for the reference part.

Finally, in step S28, XMA
The analyzer 3 registers the analysis result in the defect database 2 through the information transmission path 4. The analysis result includes step S2
7, that is, the names of the elements satisfying the determination conditions for each of the foreign substance / defect part and the reference part are included. At this time, the defect database 2 stores
The judgment result is linked to the defect information and stored.

As described above, in the yield management system of the present embodiment, the judgment result to be registered includes the judgment result for the reference part. Therefore, by using the registered determination result in the statistical processing, a statistical processing result that also takes into account a reference portion where no foreign matter or defect exists can be accurately obtained without requiring complicated calculation processing.

[0070]

In the system according to the first aspect of the present invention, quantitative elemental analysis is performed on the foreign matter / defect portion of the object, and from the results, element names satisfying the determination conditions are selected, and the foreign matter / defect is selected.
The information is linked with the information of the defective part and stored. Therefore, by performing statistical processing on the registered element names, an accurate statistical processing result can be obtained without the need for complicated calculation processing, as in the statistical processing based on qualitative analysis. In addition, JP-A-11-214462, JP-A-8-124982, and any of JP-A-10-221040, which are already listed as related to the present invention, are based on the results of quantitative elemental analysis. There is no disclosure of the feature itself of selecting an element name that satisfies the determination condition, and the above-described effect that accurate and simple statistical processing can be performed cannot be obtained.

In the system of the second invention, the judgment condition is:
Since the condition that the abundance of elements exceeds a predetermined threshold value, statistical processing on foreign matter / defects based on information on whether or not there is an element present above a certain level, without the need for complicated calculation processing It is possible to execute accurately.

In the system according to the third aspect of the present invention, since the threshold value is individually given for each element, more accurate statistical processing taking into account the fact that the degree of influence on the characteristics of the device differs for each element is performed. It can be easily executed.

In the system according to the fourth aspect of the present invention, since a plurality of thresholds are given to the same element, it is possible to accurately obtain a statistical processing result including quantitative information without complicated calculation processing. Can be.

In the system according to the fifth aspect of the present invention, information indicating whether the foreign substance / defect site is a conductor or a non-conductor is stored together with the element name in link with the foreign substance / defect site information. Statistical processing results including information on conductors and non-conductors can be accurately obtained without requiring complicated calculation processing.

In the system according to the sixth aspect of the present invention, the names of the elements satisfying the determination conditions in the foreign matter / defect part and the names of the elements satisfying the other determination conditions in the reference part having no foreign matter / defect are linked to the information of the foreign matter / defect part. Therefore, a statistical processing result that takes into account a reference portion where there is no foreign substance or defect to be compared can be accurately obtained without requiring complicated calculation processing.

In the system according to the seventh aspect of the present invention, the names of the elements satisfying the determination conditions in the foreign matter / defect part and the names of the elements satisfying the other determination conditions in the reference part having no foreign matter / defect are linked to the information of the foreign matter / defect part. Therefore, a statistical processing result that takes into account a reference portion where there is no foreign substance or defect to be compared can be accurately obtained without requiring complicated calculation processing.

Since the apparatus according to the eighth aspect of the present invention is set as an object of processing by the system according to any one of the first to seventh aspects, the reliability of the apparatus is controlled by receiving the yield based on accurate statistical processing. It becomes possible to ship as a high product.

[Brief description of the drawings]

FIG. 1 is a block diagram of a system according to a first embodiment.

FIG. 2 is a flowchart showing a processing procedure of the system according to the first embodiment;

FIG. 3 is a flowchart illustrating a processing procedure of a system according to a second embodiment;

FIG. 4 is a flowchart illustrating a processing procedure of a system according to a third embodiment;

FIG. 5 is a flowchart showing a processing procedure of a system according to a fourth embodiment.

FIG. 6 is a block diagram of a system according to a fifth embodiment.

FIG. 7 is a flowchart showing a processing procedure of the system according to the fifth embodiment.

FIG. 8 is a flowchart showing a processing procedure of the system according to the sixth embodiment.

FIG. 9 is a block diagram of a system according to a seventh embodiment.

FIG. 10 is a flowchart showing a processing procedure of the system according to the seventh embodiment.

FIG. 11 is a block diagram of a conventional system.

FIG. 12 is a flowchart showing a processing procedure of a conventional system.

[Explanation of symbols]

1 foreign matter / pattern defect inspection device (inspection device), 2 defect database (first storage device), 3 XMA analysis device (analysis device), 6 database (second storage device),
7, 8 Database (third storage device).

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) G01N 21/956 G01N 21/956 A 23/225 23/225 27/62 27/62 B H01L 21/02 H01L 21/02 Z F term (reference) 2G001 AA03 AA05 AA10 BA05 BA06 BA09 BA30 CA01 CA03 CA05 CA10 FA06 GA01 GA04 GA06 JA11 KA01 KA03 LA11 MA05 NA06 NA07 NA13 NA15 NA17 2G043 AA01 BA01 CA07 EA03 FA01 NA01 NA06 2G051 AA02 AB01 AB03 2G059 AA10 BB16 CC02 EE03 EE12 HH01 MM02 MM10 4M106 AA01 CA38 CB21 DA15 DH01 DJ14 DJ17 DJ20 DJ21 DJ27

Claims (8)

[Claims] An inspection device that inspects a surface of an object and outputs information representing a foreign object or a defect site where a foreign object or a defect exists; and an inspection device that outputs the foreign object or the defect of the object based on the information. An analyzer that quantitatively performs elemental analysis at the defect site, selects and outputs an element name satisfying a determination condition from the result of the elemental analysis, and the information expressing the element name and the corresponding foreign matter / defect site. And a first storage device that stores the data in a linked manner. 2. The yield management system according to claim 1, wherein the determination condition is a condition that an abundance of an element exceeds a predetermined threshold. 3. The yield management system according to claim 2, wherein said threshold value is individually given for each element. 4. A plurality of the thresholds are provided for the same element, and the analyzer outputs, for each of the plurality of thresholds, an element name whose abundance exceeds the threshold. The yield management system according to claim 2 or 3. 5. The apparatus according to claim 1, further comprising: a second storage device that stores information indicating a relationship between the abundance of the element and the conductor and the nonconductor, wherein the analyzer is further stored in the second storage device. The first storage device further outputs, based on the information and the result of the elemental analysis, information indicating whether the corresponding foreign matter / defect site is a conductor or a nonconductor. 5. The information as to whether the foreign matter / defect part is a conductor or a non-conductor is stored in a state linked to the corresponding information representing the foreign matter / defect part. 2. The yield management system according to 1. 6. The analysis device further includes, based on the information output by the inspection device, a portion equivalent to the foreign material / defect portion in the structure of the object, wherein both the foreign material and the defect are present. Elemental analysis is performed quantitatively on a reference part, which is a part that is not to be performed, and an element name that satisfies another determination condition is selected and output from the result of the elemental analysis. The first storage device further includes: The yield management system according to any one of claims 1 to 5, wherein the element name output with respect to the corresponding reference site is linked to the information expressing (i) and stored. 7. The apparatus further comprises a third storage device for storing information defining a manufacturing process of the object, wherein the analysis device further comprises: A result of the elemental analysis is calculated as a result of the elemental analysis at the reference site based on the information stored in the third storage device, and an element name satisfying another determination condition is selected from the result of the elemental analysis and output. The first storage device according to claim 1, wherein the first storage device further stores the element name output for the corresponding reference portion linked to the information representing the foreign matter / defect portion. The yield management system according to any of the above. 8. An apparatus which is set as the object by the yield management system according to claim 1.