JP2001196191A - Organic thin film luminous display and its manufacturing method - Google Patents

Organic thin film luminous display and its manufacturing method

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Publication number
JP2001196191A
JP2001196191A JP2000006891A JP2000006891A JP2001196191A JP 2001196191 A JP2001196191 A JP 2001196191A JP 2000006891 A JP2000006891 A JP 2000006891A JP 2000006891 A JP2000006891 A JP 2000006891A JP 2001196191 A JP2001196191 A JP 2001196191A
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JP
Japan
Prior art keywords
electrodes
pixel
electrode
current
organic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000006891A
Other languages
Japanese (ja)
Inventor
Takatoshi Onoda
Yotaro Shiraishi
貴稔 小野田
洋太郎 白石
Original Assignee
Fuji Electric Co Ltd
富士電機株式会社
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Application filed by Fuji Electric Co Ltd, 富士電機株式会社 filed Critical Fuji Electric Co Ltd
Priority to JP2000006891A priority Critical patent/JP2001196191A/en
Publication of JP2001196191A publication Critical patent/JP2001196191A/en
Granted legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • H01L2251/56Processes specially adapted for the manufacture or treatment of OLED
    • H01L2251/568Repairing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3281Passive matrix displays

Abstract

PROBLEM TO BE SOLVED: To offer an organic thin film luminous display and its manufacturing method which is prevented from deteriorating in display image quality due to generating of a short circuit defect at the time of a long-term drive and is enabled to suppress a short-circuit current. SOLUTION: The organic thin film luminous display comprising a first electrode 7 of two or more rows configured on a transparent substrate 1 in a thin strip shape; a second electrode 8 of two or more rows configured in the thin strip shape in the direction which intersects perpendicularly with the first electrode 7; an organic emission layer sandwiched between the first electrode 7 and the second electrode 8 at least; and a pixel 10 constituted by intersection points of the electrodes 7 and 8 respectively; displays an information by taking out an electro-luminescence by impressing a voltage between the electrodes 7 and 8 which constitutes a desired pixel 10, wherein a plural of the first electrodes 7 have at least 3 functions which are an electricity supply function supplying current to the corresponding pixel 10, a transparent electrode function taking out electric luminescence in the pixel 10, and an interception function disconnecting wire by an over-current in the pixel 10 at the time of the short circuit between both the electrodes 7 and 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting device used as a display, and more particularly, to a passive matrix organic light emitting display which can be driven for a long period of time and has high reliability, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Organic light-emitting devices are self-luminous devices and have high visibility and can be driven at a low voltage. Therefore, research on practical use has been actively conducted (Appl. Phys. .Lett., 51, 913, 1987). Such an organic light emitting device has a structure in which a transparent conductive film as an anode, a hole transport layer and a light emitting layer made of an organic substance, and a metal film as a cathode are formed on a transparent substrate. Also, a structure in which an organic layer has a three-layer structure of a hole transport layer, a light emitting layer, and an electron transport layer is known.

The light emitting mechanism of an organic light emitting device is considered as follows. Electrons injected from the cathode and holes injected from the anode generate excitons in the fluorescent dye molecules in the light-emitting layer, and electroluminescence (hereinafter, referred to as “EL”) occurs in a process in which the excitons radiatively recombine. "). The electroluminescence is emitted to the outside through the transparent conductive film and the transparent substrate, which are the anode, and emits light.

[0004] As one of displays using an organic light emitting element, there is a passive matrix type (simple matrix type) display as shown in FIG. Such a passive matrix type organic light emitting display comprises a plurality of rows of anodes 7 (first electrodes, data lines) on a transparent substrate 1 and a plurality of rows of cathodes 8 (second electrodes, address lines) crossing the anodes.
And an organic layer 5 including an organic light emitting layer sandwiched therebetween. The intersection area between the anode 7 and the cathode 8 forms one pixel 10, and a display portion is formed by arranging a plurality of pixels 10. The anode and the cathode extend from the display portion to the periphery of the substrate. The display device is configured by connecting the external drive circuit and the display unit via the connection unit.

Recently, research on a high-definition passive matrix type color display utilizing the high light emission response speed of an organic light emitting device has been advanced, and low cost and high quality for information equipment applications such as full color display and moving image display. Expectations for the realization of displays are increasing.

As described above, the organic light emitting device is a device that obtains electroluminescence by injecting current, and includes a driving circuit capable of controlling a large current as compared with an electric field device such as a liquid crystal display, an anode capable of flowing a large current, and an anode. Requires a cathode.

As an electrode used for a passive matrix type organic light emitting display, a transparent conductive metal oxide such as indium tin oxide (ITO), indium zinc oxide, or tin oxide is used for an anode, and a cathode is used for a cathode. Is a low work function metal such as Al, an Al alloy, and an Mg alloy.
The resistivity of the transparent metal oxide is larger than that of Al or the like used as a metal wiring material, and the film thickness is limited because it is necessary to maintain a certain degree of visible light transmittance as a transparent conductive film. . For this reason, the wiring resistance of the anode tends to increase.

Problems caused by the wiring resistance of the anode include a high driving voltage required for driving the panel due to a voltage drop caused by the wiring resistance, resulting in an increase in power consumption and a joule generated in the wiring. As a result of heat heating the organic layer, the characteristics of the panel are degraded.

As a method of reducing the resistance of the anode,
JP-A-4-82197, JP-A-5-307997
As shown in the examples in Japanese Patent Application Laid-Open No. Hei. That is, when such a method of laminating a transparent conductive film and a metal film is used, in JP-A-5-307997, “the work function of the anode and the anode stacked partly between the hole transport layers is smaller than that of the anode. Japanese Patent Laid-Open Publication No. 6-5369 discloses that the second anode has a work function higher than that of the first anode portion in contact with the transparent first anode portion and the hole transport layer. As described above, the effect of reducing wiring resistance by laminating metal films can be obtained.

[0010] Further, by laminating a metal film having a relatively low resistance, the emission current flows more intensively in the metal film than in the transparent conductive film. Accordingly, for the transparent conductive film, the material can be selected and formed with priority given to the transmittance over the conductivity, and the luminous efficiency of the light emitting element can be improved.

As described above, when designing wiring such as the anode and cathode of a passive matrix type organic light emitting display, it is important to reduce the wiring resistance and to improve the aperture ratio and the transmittance at the same time. Was. The operating voltage and power consumption can be reduced by this design guideline.
In addition, it is also possible to improve the driving stability by suppressing the deterioration due to Joule heat and the like.

[0012]

However, there are still important problems in the actual passive matrix type organic light emitting display. It is between the electrodes in the pixel,
The point is that an electrical short may occur due to a structural defect in the process.

For example, a pixel pitch of 0.11 mm × 0.3
3 mm, an aperture ratio of 70%, the number of data lines is 240 using the anode as the data line, the number of address lines is 60 using the cathode as the address line, and the number of pixels formed at the intersection of both electrodes is 1
Consider a 4400 1.25-type passive matrix organic light emitting display. For simplicity, the data line potential is H (positive potential) when selected and zero (ground) when not selected, and the address line potential is zero (ground) when not selected and H (positive potential: same as data potential H). , Scanning line 1
The address line is driven by one power supply at a constant voltage.

In a state where there is no electrical short-circuit defect, the electrode wiring resistance or the internal impedance of the driving circuit is sufficiently smaller than the resistance of the pixel having the organic light emitting element. In the illustrated example, the pixel resistance at the time of selection (light emitting state, forward bias) is several hundred kΩ, and the pixel resistance at the time of non-selection (light-off state, forward bias) or reverse bias is several tens MΩ or more. The electrode wiring resistance or the internal impedance of the driving circuit is at most several kΩ. Most of the voltage applied to the panel drops between both electrodes in the pixel in order to obtain the electric field strength necessary for injecting electric charge into the pixel, that is, the organic light emitting layer. As described above, by reducing the wiring resistance and the internal impedance of the driving circuit, it is possible to realize a panel with low power consumption and excellent image quality uniformity.

However, when an electric short circuit exists in a pixel, the above-mentioned pixel resistance is almost lost and several hundreds of pixels are lost at most.
About Ω. For this reason, there is a drawback that a large current (hereinafter, referred to as “leakage current”) determined by the wiring resistance and the internal impedance of the drive circuit flows through the electric path passing through the defective pixel. In the illustrated example, while the pixel current during normal operation is 100 μA at most, the leakage current reaches several mA to several tens mA.

This leakage current not only increases the power consumption, but also causes the organic thin film layer, which is relatively weak in heat, to deteriorate, to increase the electrode short-circuit area in the short-circuit pixel, and to propagate to the neighboring pixels. Thus, a new electrically shorted pixel is induced.

In addition, a pixel having an electrical short circuit is not lit because it is impossible to obtain a potential between electrodes required for light emission, which causes not only a black dot display defect during display but also an image display. Causes various image quality defects. For example, image quality defects such as a data line including a short-circuited pixel continuously lighting in a bright line or an entire address line including a short-circuited pixel are darkened.

As a method of repairing a short-circuited pixel of a passive matrix type organic light-emitting display immediately after fabrication, for example, a method of partially destroying and repairing a short-circuit electrode using a laser, or a method of applying a high voltage exceeding an emission voltage to a short-circuit portion There is a method of repairing.

However, the organic layer used in the passive matrix type organic light emitting display has a thickness of several hundreds.
Since it is extremely thin, such as about nm or less, it is industrially difficult to eliminate short-circuit defects due to dust adhesion and film formation unevenness, and although it can be repaired by the above-described method and the like,
In order to obtain a stable pixel during long-term driving, it is necessary to suppress a short-circuit current in a generated short-circuit defective pixel and to eliminate a display defect caused by a short circuit.

It is therefore an object of the present invention to provide an organic thin-film light emitting display which can prevent a reduction in display image quality due to the occurrence of short-circuit defects during long-term driving and can suppress a short-circuit current, and a method of manufacturing the same.

[0021]

In order to solve the above-mentioned problems, an organic thin-film light emitting display according to the present invention comprises a plurality of rows of first electrodes arranged in a strip shape on a transparent substrate. Having a plurality of rows of second electrodes arranged in a strip shape in a direction orthogonal to the electrodes, comprising at least an organic light emitting layer sandwiched between the first electrode and the second electrode, and The intersection of the two electrodes constitutes a pixel, and in the organic thin-film light emitting display for displaying information by applying a voltage between the two electrodes constituting a desired pixel to take out electroluminescence, A first electrode for supplying a current to the corresponding pixel, a transparent electrode function for extracting electroluminescence in the pixel, and an overcurrent limit and potential adjustment when a short circuit occurs between the two electrodes in the pixel. It is characterized in further comprising at least three functions of the current limiting resistor function performed.

In the present invention, the plurality of rows of first electrodes may include a power supply portion extending from the plurality of first electrodes, the power supply portion being made of an electrically continuous conductor, and the electrode being provided without being in electrical contact with the power supply portion. A transparent electrode portion made of a transparent conductor arranged in the pixel portion, and a current-limiting connection portion made of a high-resistance conductor arranged to electrically connect between the power supply portion and the transparent electrode portion. And a power supply unit formed of an electrically continuous conductor extending to the electrode, and arranged in the pixel portion in the electrode in electrical contact with the power supply unit. And a current-limiting transparent electrode portion made of a high-resistance transparent conductor.

Further, in the method for manufacturing an organic thin-film light emitting display according to the present invention, the current-limiting connection portion may be made of a metal oxide having a resistivity of 1 × 10 −3 to 1 × 10 +1 Ωcm as the high-resistance conductor. The method for manufacturing an organic thin-film light-emitting display panel according to the present invention, wherein the resistivity is controlled by controlling an oxygen concentration in a target and / or a sputtering gas. It is.

Further, in another method of manufacturing an organic thin-film light emitting display according to the present invention, the current-limiting transparent electrode portion is provided with a resistivity of 1 × 10 −3 to 1 × 10 +1 Ω as the high-resistance transparent conductor.
The method of manufacturing an organic thin-film light-emitting display panel according to the present invention, wherein the resistivity is controlled by controlling the oxygen concentration in a target and / or a sputtering gas. It is characterized by the following.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the organic thin-film light emitting display of the present invention will be described with reference to specific embodiments. As shown in FIG. 1, the organic thin-film light-emitting display of the present invention includes a plurality of rows of first electrodes 7 arranged in a strip shape on a transparent substrate 1 and a direction orthogonal to the first electrodes 7. A plurality of rows of second electrodes 8 similarly arranged in a strip shape, comprising at least an organic layer 5 including an organic light emitting layer sandwiched between two electrodes 7 and 8; Each intersection constitutes a pixel 10, and information is displayed by extracting electroluminescence by applying a voltage between the electrodes 7 and 8 constituting a desired pixel 10 and injecting a current.

In the present invention, each of the plurality of rows of first electrodes 7 has a power supply function for supplying a current to the corresponding pixel 10, a transparent electrode function for extracting electroluminescence from the pixel 10, Needs to have at least three functions, that is, a current limiting resistance function for limiting overcurrent and adjusting potential when the first electrode 7 and the second electrode 8 are short-circuited.

FIG. 2 is a partially enlarged view of a preferred example of the organic thin-film light emitting display of the present invention. The transparent electrode portion 4 made of a transparent conductive film and an electric material such as a metal film are provided independently for each unit light emitting pixel. A preferred configuration example of a first electrode 7 including a power supply unit 2 made of a continuous conductor and a current limiting connection unit 3 electrically connecting the transparent electrode unit 4 and the power supply unit 2 in the pixel is shown. It is a schematic plan view. In this case, the transparent electrode section 4 is formed in each pixel 10 without being in electrical contact with the power supply section 2, and the current-limiting connection section 3 connecting these is made of a high-resistance conductor.

With the above-described structure, when a short circuit occurs between the electrodes in the pixel 10 during long-term driving, a large voltage drop occurs in the current-limiting resistor portion 3 made relatively high in resistance.

By this voltage drop, the potential fluctuation of the electrode row including the short-circuited pixels is suppressed to within an allowable range, so that it is possible to prevent poor image quality such as a bright linear defect.

Further, the resistance of the current limiting resistor 3 makes it possible to limit the short-circuit current to a design range allowable by the drive circuit.

The resistance value of the current limiting resistor 3 in the present invention is:
It is determined according to the above principle. That is, the number of matrices of the passive matrix type organic thin film light emitting display, the power supply resistance of the power supply unit 2, the light emission threshold voltage of the light emitting element,
The design can be made in consideration of the internal impedance of the driver IC used in the drive circuit.

In particular, when the current limiting connection portion 3 is made of a high-resistance conductive film having the same transparency as the transparent conductive film forming the transparent electrode portion 4, that is, as shown in FIG. One electrode 7 is connected to a power supply unit 2 made of an electrically continuous conductor.
And a current-limiting transparent electrode portion 9 made of a high-resistance transparent conductor formed so as to be in electrical contact with the power supply portion 2 independently for each pixel. In addition, it is possible to suppress a decrease in the yield in forming the electrodes. In this case, the current-limiting connection portion 3, that is, the transparent conductive film constituting the current-limiting transparent electrode portion 9 can have a high resistance by narrowing the wiring width or the like, thereby achieving a high overcurrent suppressing effect. Obtainable.

As the high-resistance conductive material used for the current-limiting connection portion 3, a high-melting-point material that can withstand the heat generated when an overcurrent occurs can be selected, so that disconnection due to Joule heat generated due to a leak current can be prevented. Can be prevented. In particular, a metal oxide having a resistivity of 1 × 10 −3 to 1 × 10 +1 Ωcm and capable of being formed by a sputtering method is preferable. By controlling the oxygen concentration in the target and / or the sputtering gas, Can be controlled to a desired resistivity.

Examples of specific metal oxides as the high-resistance conductor material according to the present invention include indium-tin-oxide, tin oxide, zinc oxide, and indium-zinc-oxide. From the viewpoint of the smoothness of the film formation surface, which is important for eliminating and reducing the cause of the above-described electrical short circuit, and the ease of controlling the resistivity, which is an important control factor of the present invention, indium-zinc- Oxides are preferred. This is because the resistance of indium-zinc-oxide can be adjusted without impairing the surface smoothness by controlling the oxygen partial pressure in the argon / oxygen sputtering gas.

FIGS. 3A to 3C are enlarged views of a preferred example of the unit light-emitting pixel portion according to the present invention, and show configuration examples in which the position and the shape of the current limiting connection portion 3 are different. ing.
The current limiting connection part 3 is only required to be in electrical contact with the power supply part 2 and the transparent electrode part 4 and to be formed so that the transparent electrode part 4 and the power supply part 2 are not in direct contact. The position and shape are not limited to these examples.

FIGS. 4A to 4C are enlarged views of another preferred embodiment of the unit light-emitting pixel portion according to the present invention. An example is shown. In this case, the current limiting connection portion and the transparent electrode portion are integrally formed as the current limiting transparent electrode portion 9 and the power supply portion 2
The arrangement position is not limited to these examples.

In the organic thin-film light emitting display of the present invention, the first electrode 7 may have the above-described structure, and the materials of the other components, the manufacturing procedure, and the like can be performed in accordance with a conventional manner. Further, in the manufacturing method of the present invention, it is important to control the above-described desired resistivity by controlling the oxygen concentration in the film formation atmosphere, and other conditions and the like can be appropriately set and performed. It is.

[0038]

Hereinafter, the present invention will be described in more detail with reference to examples. The number of pixels (80 × RGB) × 60 dots, the pixel pitch 110 × 330 μm, and the number of sub-dots 14400, the organic EL of the example and the comparative example as shown below.
A display panel was manufactured.

Example 1 First, a substrate having the electrode structure shown in FIG. On a glass substrate, a Mo film having a resistivity of 1.5 × 10 −5 [Ω · cm] as a power supply unit 2 was formed to a thickness of 3
It was formed with a thickness of 00 nm and a width of 20 μm. The DC magnetron sputtering method was used for the film formation of the power supply unit 2, and the ordinary photolithography method was used for the patterning.

Next, the resistivity 4.1 as the transparent electrode portion 4
× 10 −3 [Ω · cm] indium-tin-oxide (IT
O) was formed with a thickness of 100 nm, a width of 80 μm, and a length of 280 μm. The DC magnetron sputtering method was used for the film formation of the transparent electrode part 4, and the usual photolithography method was used for the patterning.

Further, the current limiting connection 3 has a resistivity of 6 × 10
-2 [Ω · cm] indium-zinc-oxide with a film thickness of 30
It was formed with a thickness of 10 nm and a width of 80 μm. DC magnetron sputtering was used for forming the pixel electrode portion, and ordinary photolithography was used for patterning.

Subsequently, an organic layer 5 and a cathode 8 as a second electrode were formed on the substrate by the following procedure, and sealing and connection were performed. The above substrate is mixed with an oxygen / nitrogen mixed gas (20%
(Oxygen and water content 20 ppm or less)) After UV irradiation cleaning in a purge environment, the mixture was immediately introduced into a vapor deposition apparatus.

Next, an organic hole injecting layer, an organic light emitting layer, an organic electron injecting layer and an Al cathode were successively formed without breaking a vacuum of the order of 10 × 10 −5 Pa. All film formation was performed by using a resistance heating type evaporation method, and a quartz oscillator type film thickness meter was used for film thickness detection. A 20 μm-thick electroformed Ni mask was used to form the cathode as the second electrode.

The substrate on which film formation has been completed is transferred to a glove box under a nitrogen gas atmosphere without being exposed to the atmosphere.
Sealing was performed using a V-curing / thermo-curing combined sealant and a glass sealing plate. Nitrogen gas (water content 5 ppm or less, oxygen content 5 ppm) which is an environmental gas in the glove box
Below). The sealed substrate was taken out into the atmosphere and connected to the drive circuit terminals using an anisotropic conductive adhesive (ACF).

Example 2 First, a substrate having the electrode structure shown in FIG. On a glass substrate, a Mo film having a resistivity of 1.5 × 10 −5 [Ω · cm] as a power supply unit 2 was formed to a thickness of 3
It was formed with a thickness of 00 nm and a width of 20 μm. The DC magnetron sputtering method was used for the film formation of the power supply unit 2, and the ordinary photolithography method was used for the patterning.

Next, the current-limiting transparent electrode portion 9 is formed of a resistivity 2 ×
An indium-zinc-oxide of 10 -2 [Ω · cm] is formed of a thin line portion having a thickness of 100 nm, a width of 10 µm, a length of 80 µm, and a width of 8
It was formed into a shape consisting of a rectangular portion having a length of 0 μm and a length of 280 μm. A DC magnetron sputtering method was used for forming the current-limiting transparent electrode portion 9, and a normal photolithography method was used for patterning. Subsequently, Example 1 was placed on the substrate.
The organic layer 5 and the cathode 8 as the second electrode were formed in the same manner as described above, and sealing and connection were performed.

Comparative Example 1 On a glass substrate, a resistivity 1.5 × 10
-5 [Ωcm] Mo film with a thickness of 300 nm and a width of 20 μm
Formed. The DC magnetron sputtering method was used for the film formation of the power supply unit 2, and the ordinary photolithography method was used for the patterning.

Next, the resistivity of the transparent electrode portion 4 is 2 × 1.
An indium-zinc-oxide of 0 -2 [Ω · cm] was formed in a rectangular shape having a thickness of 100 nm, a width of 100 µm, and a length of 280 µm such that the long side of 280 µm was in contact with the power supply unit 2. The DC magnetron sputtering method was used for the film formation of the transparent electrode part 4, and the usual photolithography method was used for the patterning. Subsequently, an organic layer 5 and a cathode 8 as a second electrode were formed on this substrate in the same manner as in Example 1, and sealing and connection were performed.

Evaluation of Performance Passive matrix driving (driving frequency of 6 hours) was performed for the organic light emitting displays of the above Examples and Comparative Examples for 100 hours.
0 Hz, a duty of 1/60, a number of gradations of 32, and a gradation method of frame thinning out), and then the following evaluation was performed. It should be noted that the driving voltage −
Since the luminance characteristics are different, for comparison, evaluation was performed by normalizing the Arial luminance in all lighting states to be 100 cd / m 2 .

Evaluation item 1) Drive voltage: An increase in operating voltage due to the introduction of the structure according to the present invention (current-limiting connection portion 3 or current-limiting transparent electrode portion 9) was evaluated. 2) Number of non-lighting pixels in all lighting states: This corresponds to the number of defective pixels accompanied by an electrical short circuit, and the effect of introducing the structure according to the present invention on occurrence of defects was evaluated. The full lighting state is a state in which all data lines are selected. 3) Short-circuit current per defective pixel: The charge / discharge current, circuit current, etc., are subtracted from the panel current in the all-off state (all data lines are driven in a non-selected state), and divided by the number of short-circuit pixels. Value. The short-circuit current limiting ability of the structure according to the present invention was evaluated. 4) Linear image quality defect at the time of display of a test image: In a state where a test image such as a landscape image was given, an image defect caused by a short-circuit pixel was determined. These results are summarized in Table 1 below. In this evaluation, at the start of driving, all displays were defect-free.

[0051]

[Table 1]

From the above Table 1, it is confirmed that the embodiment has a remarkable limiting effect on the short-circuit current caused by the short-circuited pixel in comparison with the comparative example which is the prior art. Also, no bright linear image defects caused by the lighting of the data line including the short-circuited pixels were observed.

Further, the rise of the driving voltage caused by the rise of the wiring resistance, which is a concern in the embodiment, is slight (1 relative value).
% Or less), and there was no significant difference from the comparative example in the number of non-lighting pixels, which was a concern due to the complicated structure. From the above points, it was confirmed that the object of the present invention was achieved.

[0054]

According to the present invention, it is possible to provide a good organic thin-film light emitting display capable of preventing a deterioration in display image quality due to the occurrence of short-circuit defects during long-term driving and suppressing a short-circuit current, and a method of manufacturing the same. Can be.

[Brief description of the drawings]

FIG. 1 is a plan view showing a passive matrix organic light emitting display according to an example of the present invention.

FIG. 2 is a partially enlarged view showing a portion surrounded by an ellipse of the organic light emitting display of FIG.

FIG. 3 is a partially enlarged view showing an electrode structure of a unit light emitting pixel portion according to the present invention.

FIG. 4 is a partially enlarged view showing another electrode structure of a unit light emitting pixel portion according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Power supply part 3 Current limiting connection part 4 Transparent electrode part 5 Organic layer 7 First electrode (data line) 8 Second electrode (address line) 9 Current limiting transparent electrode part 10 pixel

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K007 AB05 AB18 BA06 BB01 BB04 CA01 CB01 CB03 DA00 DB03 EB00 FA01 FA02 GA00 5C094 AA21 AA42 AA43 BA27 CA19 DA07 EA05 EB02 HA08

Claims (6)

[Claims]
1. A plurality of rows of first electrodes arranged in a strip shape on a transparent substrate, and a plurality of rows of second electrodes arranged in a strip shape in a direction orthogonal to the first electrode. Having at least an organic light-emitting layer sandwiched between the first electrode and the second electrode, and the intersection of the two electrodes constitutes a pixel, and the two electrodes constituting a desired pixel In a thin-film organic light-emitting display for displaying information by applying voltage between electrodes to extract electroluminescence, the plurality of columns of first electrodes each supply a current to a corresponding one of the pixels, An organic thin film light emitting device having at least three functions: a transparent electrode function for extracting electroluminescence in a pixel; and a current limiting resistance function for limiting overcurrent and adjusting potential when a short circuit occurs between the two electrodes in the pixel. Spray.
2. A power supply unit comprising a plurality of rows of first electrodes, the power supply unit comprising an electrically continuous conductor extending to the electrode, and a power supply unit provided in the electrode without being in electrical contact with the power supply unit. A transparent electrode portion made of a transparent conductor arranged in the pixel portion, and a current-limiting connection portion made of a high-resistance conductor arranged to electrically connect between the power supply portion and the transparent electrode portion. The organic thin-film light-emitting display according to claim 1.
3. The power supply unit, wherein the plurality of rows of first electrodes are formed of an electrically continuous conductor extending to the electrodes, and the pixel in the electrode is in electrical contact with the power supply unit. 2. The organic thin-film light-emitting display according to claim 1, comprising a current-limiting transparent electrode portion made of a high-resistance transparent conductor arranged in a portion.
4. The current limiting connection part is formed by sputtering a metal oxide having a resistivity of 1 × 10 −3 to 1 × 10 +1 Ωcm as the high-resistance conductor. A method for producing an organic thin film light emitting display panel according to the above,
A method for manufacturing an organic thin-film light emitting display, wherein resistivity is controlled by controlling oxygen concentration in a target and / or sputter gas.
5. The current-limiting transparent electrode portion is formed by depositing a metal oxide having a resistivity of 1 × 10 −3 to 1 × 10 +1 Ωcm as the high-resistance transparent conductor by a sputtering method. Item 4. The method for producing an organic thin film light emitting display panel according to Item 3, wherein the resistivity is controlled by controlling the oxygen concentration in the target and / or the sputtering gas.
6. The method according to claim 1, wherein the metal oxide is indium-zinc-
The method for producing an organic thin-film light-emitting display according to claim 4 or 5, which is an oxide.
JP2000006891A 2000-01-14 2000-01-14 Organic thin film luminous display and its manufacturing method Granted JP2001196191A (en)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6989806B2 (en) 2002-11-20 2006-01-24 Osram Opto Semiconductors Gmbh Current limiting device
WO2014178547A1 (en) * 2013-04-29 2014-11-06 주식회사 엘지화학 Organic light emitting device and method for fabricating same
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