JP2001183699A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JP2001183699A JP2001183699A JP36412599A JP36412599A JP2001183699A JP 2001183699 A JP2001183699 A JP 2001183699A JP 36412599 A JP36412599 A JP 36412599A JP 36412599 A JP36412599 A JP 36412599A JP 2001183699 A JP2001183699 A JP 2001183699A
- Authority
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- Japan
- Prior art keywords
- signal line
- liquid crystal
- crystal display
- display device
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は液晶表示装置に関
し、特に横電界方式、すなわちＩＰＳ（Ｉｎ−Ｐｌａｎ
ｅ Ｓｗｉｔｃｈｉｎｇ）モードと呼ばれる広視野角液
晶表示装置の電極構成に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to an in-plane switching mode, that is, an IPS (In-Plan).
The present invention relates to an electrode configuration of a liquid crystal display device having a wide viewing angle called an “e Switching” mode.
【０００２】[0002]
【従来の技術】一般にＩＰＳモードの液晶表示装置は液
晶分子を基板に対し水平面内で回転させて表示を行う。
従来ＩＰＳモードの駆動はＴＦＴ基板上の信号線に任意
の電位を印加し、走査線の信号により、薄膜トランジス
タを駆動し、画素電極に電位を与える。この画素電極と
共通信号線の電位差により、液晶分子の配列角度を変え
て表示の明暗を変えている。カラーフィルタ側基板は光
源の透過部に各色層を配し、ＴＦＴ側の信号線、薄膜ト
ランジスタ、及び走査線上はカラーフィルタ側基板のブ
ラックマトリックス層により遮光される。2. Description of the Related Art Generally, an IPS mode liquid crystal display device performs display by rotating liquid crystal molecules relative to a substrate in a horizontal plane.
In the conventional IPS mode driving, an arbitrary potential is applied to a signal line on a TFT substrate, a thin film transistor is driven by a signal of a scanning line, and a potential is applied to a pixel electrode. Due to the potential difference between the pixel electrode and the common signal line, the arrangement angle of the liquid crystal molecules is changed to change the brightness of the display. The color filter-side substrate is provided with each color layer in the transmission part of the light source, and the signal lines, thin-film transistors, and scanning lines on the TFT side are shielded from light by the black matrix layer of the color filter-side substrate.
【０００３】ＩＰＳモードの液晶表示装置は通常、カラ
ーフィルタ側基板は電気的に絶縁されている。これに対
し、ＴＦＴ側基板の走査線には、ほぼ常時マイナスの電
位が供給されている。カラーフィルタ基板上のパターン
は電位が固定されておらずフローティング状態にあるた
め、ＴＦＴ基板の走査線からの静電誘導結合によってカ
ラーフィルタ側のブラックマトリックス層が電位を持っ
てしまう。これはブラックマトリックス層が完全な絶縁
物ではなく、ある程度導電性があるためである（その電
気抵抗は約１０-4〜１０-5Ω）。更に、液晶中にイオン
性の不純物があると、このブラックマトリックス層の電
位が徐々に変化し色層に注入される現象がある。これに
より、液晶分子に縦電界がかかり、表示特性の悪化を引
き起こす。In the IPS mode liquid crystal display device, the substrate on the color filter side is usually electrically insulated. On the other hand, a negative potential is almost always supplied to the scanning lines on the TFT-side substrate. Since the potential of the pattern on the color filter substrate is not fixed and is in a floating state, the black matrix layer on the color filter side has a potential due to electrostatic induction coupling from the scanning line of the TFT substrate. This is because the black matrix layer is not a perfect insulator but has a certain degree of conductivity (its electric resistance is about 10 -4 to 10 -5 Ω). Further, when ionic impurities are present in the liquid crystal, there is a phenomenon that the potential of the black matrix layer gradually changes and is injected into the color layer. As a result, a vertical electric field is applied to the liquid crystal molecules, causing deterioration of display characteristics.
【０００４】この現象を図４を参考に説明する。まず、
前述の走査線１（図４ではゲート絶縁層７中に透視した
状態として点線で表現されている）にはほぼ常時マイナ
スの電位が供給され、この電位がゲート絶縁層７、パッ
シベーション膜８、液晶層１７を介してブラックマトリ
ックス層１１へマイナスの電位を与える。この電位がＲ
ＧＢの三原色を有する染料や顔料の入った樹脂膜である
色層１２に注入されて（矢印１４参照）、ＴＦＴ側の画
素部との電位差が発生し、両基板間に基板面と垂直方向
の電界成分が発生する。本来の液晶分子はＴＦＴ基板９
及びカラーフィルタ側基板１０とほぼ平行な状態で、画
素電極５と共通信号電極３の電位差により横回転し光透
過率を変えている液晶分子１５の状態を示すべきである
が、上記垂直成分の電界により縦方向へ回転した液晶分
子１６も生じてしまう。このことによって、本来液晶層
が透過すべき光の量にばらつきが生じ、表示むらとして
見えてしまう。[0004] This phenomenon will be described with reference to FIG. First,
A negative potential is almost always supplied to the above-described scanning line 1 (shown by a dotted line in FIG. 4 as a see-through state in the gate insulating layer 7), and this potential is applied to the gate insulating layer 7, the passivation film 8, and the liquid crystal. A negative potential is applied to the black matrix layer 11 via the layer 17. This potential is R
When injected into the color layer 12 which is a resin film containing a dye or a pigment having three primary colors of GB (see arrow 14), a potential difference is generated between the pixel portion on the TFT side and the substrate in a direction perpendicular to the substrate surface between the two substrates. An electric field component is generated. The original liquid crystal molecules are on the TFT substrate 9
In addition, the state of the liquid crystal molecules 15 which are rotated in a horizontal direction by the potential difference between the pixel electrode 5 and the common signal electrode 3 to change the light transmittance in a state substantially parallel to the color filter side substrate 10 should be shown. The liquid crystal molecules 16 rotated in the vertical direction by the electric field are also generated. As a result, the amount of light that should be transmitted through the liquid crystal layer varies, and the display looks uneven.
【０００５】一方、図４に示すように、信号線２と対向
するブラックマトリクス層１１も同様に液晶層１７、パ
ッシベーション膜８を介して信号線２と容量結合する
（矢印１３参照）。結局、導電体であるフローティング
のブラックマトリクス層１１の電位は、主に、走査線３
と共通電極線１１と信号線４の電位の各々と、ブラック
マトリクス層１１との容量結合とで決まるが、なかで
も、走査線３の電位の影響を最も受けやすい。On the other hand, as shown in FIG. 4, the black matrix layer 11 facing the signal line 2 is also capacitively coupled to the signal line 2 via the liquid crystal layer 17 and the passivation film 8 (see arrow 13). As a result, the potential of the floating black matrix layer 11, which is a conductor, is mainly
And the potential of the common electrode line 11 and the potential of the signal line 4 and the capacitance coupling with the black matrix layer 11.
【０００６】このような問題の解決手段の一例が特開平
１１−１４２８８６号公報に開示されている。同公報に
よれば、走査線上の絶縁膜のみを介して液晶層と対向す
る領域の大半を画素電極の一部で覆うようにして、画素
部における電界の垂直成分を画素電極によって遮蔽する
というものである。An example of a means for solving such a problem is disclosed in Japanese Patent Application Laid-Open No. H11-142886. According to the publication, the most part of the region facing the liquid crystal layer via only the insulating film on the scanning line is covered with a part of the pixel electrode, and the vertical component of the electric field in the pixel portion is shielded by the pixel electrode. It is.
【０００７】[0007]
【発明が解決しようとする課題】しかし、同公報のよう
に画素電極を走査線上に配置すると、画素電極そのもの
が走査線の電位の影響を受けて表示品質を低下させる恐
れがある。また、画素電極の電位は表示状態によって常
に変化するので、安定したシールド状態を維持するのは
困難である。However, when the pixel electrodes are arranged on the scanning lines as in the publication, the pixel electrodes themselves may be affected by the potential of the scanning lines, thereby deteriorating the display quality. Further, since the potential of the pixel electrode constantly changes depending on the display state, it is difficult to maintain a stable shield state.
【０００８】発明の目的は、ＴＦＴ基板の、走査線の電
位の影響を少なくし、安定したシールド状態を維持で
き、表示むらの少ない高い表示特性を可能とする液晶表
示装置を提供することにある。An object of the present invention is to provide a liquid crystal display device which can reduce the influence of the potential of the scanning line on the TFT substrate, maintain a stable shielded state, and enable high display characteristics with little display unevenness. .
【０００９】[0009]
【課題を解決するための手段】まず第１の手段として、
走査線のパターン上に絶縁膜を介して信号線の形成時に
同時にシールドパターンを形成し、絶縁膜を介してシー
ルドパターンと共通信号線とを導通させ共通信号線の電
位によって走査線の電位をシールドする。第２の手段と
して、信号線のパターンを走査線上に延長し信号線の電
位によって走査線の電位をシールドする。Means for Solving the Problems First, as first means,
A shield pattern is formed at the same time as a signal line is formed on the scanning line pattern via an insulating film, and the shield pattern and the common signal line are conducted through the insulating film to shield the potential of the scanning line by the potential of the common signal line. I do. As a second means, the pattern of the signal line is extended on the scanning line, and the potential of the scanning line is shielded by the potential of the signal line.
【００１０】とくに本発明によれば、マトリックス状に
配置された複数の走査線及び信号線と、前記走査線又は
前記信号線に平行に延びて基準電位を与える共通信号線
と、画素電極と、前記走査線と前記信号線との交差部に
形成されたスイッチング素子とを有する能動素子側基板
と、ブラックマトリックス層と色層を備えたカラーフィ
ルタ側基板とを液晶層を挟んで対向させ、前記共通信号
線と前記画素電極との間に電界を発生させ、前記液晶層
の液晶分子の分子軸の方向を前記能動素子側基板に平行
な面内で回転させて表示を行う液晶表示装置において、
前記能動素子側基板の共通信号線または信号線と同電位
を有するシールド電極が、前記走査線との間に絶縁層を
挟んで、前記スイッチング素子の形成領域及び信号線と
の交点以外の領域に存在する走査線の少なくとも一部分
を覆っていることを特徴とする液晶表示装置が得られ
る。In particular, according to the present invention, a plurality of scanning lines and signal lines arranged in a matrix, a common signal line extending in parallel with the scanning lines or the signal lines and providing a reference potential, a pixel electrode, An active element side substrate having a switching element formed at an intersection of the scanning line and the signal line, and a color filter side substrate having a black matrix layer and a color layer opposed to each other with a liquid crystal layer interposed therebetween, A liquid crystal display device that generates an electric field between a common signal line and the pixel electrode and rotates the direction of the molecular axis of liquid crystal molecules of the liquid crystal layer in a plane parallel to the active element side substrate to perform display,
A shield electrode having the same potential as the common signal line or the signal line of the active element side substrate, with an insulating layer interposed between the scanning line and the scanning line, in a region other than the intersection with the switching element formation region and the signal line. A liquid crystal display device characterized by covering at least a part of the existing scanning lines is obtained.
【００１１】また、前記シールド電極が前記共通信号線
と同電位となるように前記絶縁層に設けられたコンタク
トホールを介して前記シールド電極と前記共通信号線と
が導通されていることをも特徴とする。Further, the shield electrode and the common signal line are electrically connected via a contact hole provided in the insulating layer so that the shield electrode has the same potential as the common signal line. And
【００１２】さらに、前記シールド電極が前記信号線と
同電位であり、かつ前記シールド電極と前記信号線とは
同一平面上に形成されて互いに導通されていることをも
特徴とする。Further, the shield electrode has the same potential as the signal line, and the shield electrode and the signal line are formed on the same plane and are electrically connected to each other.
【００１３】さらにまた、本発明は、前記シールド電極
が前記信号線と同一部材により形成されていることをも
特徴とし、さらに前記シールド電極は前記信号線の大半
または全部を覆っていることを特徴とする。Still further, according to the present invention, the shield electrode is formed of the same member as the signal line, and the shield electrode covers most or all of the signal line. And
【００１４】このような本発明により、ＴＦＴ基板の走
査線とカラーフィルタ側基板のブラックマトリックス層
との間に、信号線または共通信号線の電位によってシー
ルドすることによって走査線のカラーフィルタ側基板へ
の影響を低減させる。その結果、ブラックマトリックス
層の電位変動が無くなり、表示むらが低減される。According to the present invention, the scanning lines are shielded by the potentials of the signal lines or the common signal lines between the scanning lines of the TFT substrate and the black matrix layer of the color filter side substrate, so that the scanning lines can be transferred to the color filter side substrate. Reduce the effects of As a result, the potential change of the black matrix layer is eliminated, and the display unevenness is reduced.
【００１５】[0015]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照し説明する。図１は本発明の第１の実施形
態であるＴＦＴ側基板の平面図、図２は図１のＡ−Ａの
断面図である。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a TFT-side substrate according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA of FIG.
【００１６】まず、本発明が適用される広視野角液晶表
示装置の基本的構成を図１および図２を参照して説明す
る。薄膜トランジスタ（ＴＦＴ）などのスイッチング素
子が形成された、いわゆる能動素子側基板（以下ＴＦＴ
側基板と称す）では、ガラス板等の透明絶縁性基板９上
に走査線用信号が供給される走査線１と、データ信号が
供給される信号線２と、基準電位が供給される共通信号
線３と、表示すべき画素に対応した画素電極５と、薄膜
トランジスタ４とを備えている。共通信号線３は走査線
２の両側近くに形成され、共通信号線３と走査線１とは
並行している。１画素は、前段の走査線１の近くの共通
信号線３と走査線１と信号線２とで囲まれた領域をい
う。また、信号線２は、共通信号線３と走査線１とに直
交する方向に延びている。そして、走査線１と信号線２
との交差部分の近傍の走査線１上に薄膜トランジスタ４
が形成されている。First, the basic configuration of a wide viewing angle liquid crystal display device to which the present invention is applied will be described with reference to FIGS. A so-called active element side substrate (hereinafter referred to as a TFT) on which a switching element such as a thin film transistor (TFT) is formed.
In this case, a scanning line 1 to which a signal for a scanning line is supplied, a signal line 2 to which a data signal is supplied, and a communication line to which a reference potential is supplied are provided on a transparent insulating substrate 9 such as a glass plate. It includes a signal line 3, a pixel electrode 5 corresponding to a pixel to be displayed, and a thin film transistor 4. The common signal line 3 is formed near both sides of the scanning line 2, and the common signal line 3 and the scanning line 1 are parallel. One pixel refers to an area surrounded by the common signal line 3, the scanning line 1, and the signal line 2 near the preceding scanning line 1. The signal line 2 extends in a direction orthogonal to the common signal line 3 and the scanning line 1. Then, the scanning line 1 and the signal line 2
A thin film transistor 4 on the scanning line 1 near the intersection with
Are formed.
【００１７】ここで、走査線１、信号線２、共通信号線
３、画素電極５は、クロムやアルミ等の金属膜で構成さ
れている。画素電極５と共通信号線３からはストライプ
状の引き出し電極が分岐し、ともに信号線２の方向に延
び、各電極５，３に繋がる引き出し電極が平行に互い違
いに並んで配置されている。電圧を印加することにより
基板９の面に平行で走査線１の延在方向に平行な成分を
主とした電界を発生する。Here, the scanning line 1, the signal line 2, the common signal line 3, and the pixel electrode 5 are made of a metal film such as chrome or aluminum. Striped extraction electrodes branch off from the pixel electrode 5 and the common signal line 3, extend in the direction of the signal line 2, and extraction electrodes connected to the electrodes 5 and 3 are arranged alternately in parallel. By applying a voltage, an electric field is generated which mainly has a component parallel to the surface of the substrate 9 and parallel to the extending direction of the scanning line 1.
【００１８】本発明の第１の実施形態として、図１及び
図２に示すように信号線２の成膜前に共通信号線１上の
第１の絶縁層７にコンタクトホール７６を作り、信号線
２の成膜時に走査線１を覆うようにシールドパターン６
を形成し共通信号線３の電位にて走査線１の電位をシー
ルドする。As a first embodiment of the present invention, as shown in FIGS. 1 and 2, a contact hole 76 is formed in the first insulating layer 7 on the common signal line 1 before the signal line 2 is formed. The shield pattern 6 is formed so as to cover the scanning line 1 when the line 2 is formed.
And shield the potential of the scanning line 1 with the potential of the common signal line 3.
【００１９】すなわち、ＴＦＴ側基板９では、基板９上
に走査線１と共通信号線３とが並行し、その上にシリコ
ン酸化膜等のゲート絶縁膜７が形成されている。そし
て、ゲート絶縁膜７上に走査線１の少なくとも一部を被
覆する領域範囲でクロム膜などからなるシールドパター
ン層６が形成されている。さらに、シールドパターン層
６を被覆してＰＳＧ（ｐｈｏｓｐｈｏｓｉｌｉｃａｔｅ
ｇｌａｓｓ）膜等のパッシベーション膜８が形成され
ている。That is, in the TFT-side substrate 9, the scanning lines 1 and the common signal lines 3 are arranged in parallel on the substrate 9, and the gate insulating film 7 such as a silicon oxide film is formed thereon. Then, a shield pattern layer 6 made of a chromium film or the like is formed on the gate insulating film 7 in a region covering at least a part of the scanning line 1. Further, the shield pattern layer 6 is covered to form a PSG (phosphosilicate).
A passivation film 8 such as a glass film is formed.
【００２０】信号線２とシールドパターン６は同時に同
一材料で形成することが製造コスト低減の点で望まし
い。It is desirable that the signal line 2 and the shield pattern 6 are simultaneously formed of the same material from the viewpoint of reduction in manufacturing cost.
【００２１】ＴＦＴ基板の走査線とカラーフィルタ側基
板のブラックマトリックス層との間に、共通信号線の電
位によってシールドすることによって走査線のカラーフ
ィルタ側基板への影響を低減させる。その結果、ブラッ
クマトリックス層の電位変動が無くなり、表示むらが低
減される。とくに共通信号線は一定電位であるため、従
来の画素電極をシールド用に採用する場合に比較して安
定したシールド状態を維持することができる利点があ
る。The effect of the scanning lines on the color filter-side substrate is reduced by shielding between the scanning lines of the TFT substrate and the black matrix layer of the color filter-side substrate by the potential of the common signal line. As a result, the potential change of the black matrix layer is eliminated, and the display unevenness is reduced. In particular, since the common signal line has a constant potential, there is an advantage that a stable shield state can be maintained as compared with a case where a conventional pixel electrode is employed for shielding.
【００２２】以上のべたように、本発明は、マトリック
ス状に配置された複数の走査線１及び信号線２の他に、
ＩＰＳモードを実現するために、走査線１又は信号線２
と平行方向に延在して基準電位を与える共通信号線３と
画素電極５と、走査線と信号線との交差部に形成された
薄膜トランジスタとを有する薄膜トランジスタ（ＴＦ
Ｔ）側基板と、ブラックマトリックス層と色層を備えた
カラーフィルタ側基板とを液晶層を挟んで対向させ、共
通信号線と画素電極との間に電界を発生させ、液晶層の
液晶分子の分子軸の方向をＴＦＴ側基板に平行な面内で
回転させて表示を行う液晶表示装置全般に適用できる。As described above, according to the present invention, in addition to the plurality of scanning lines 1 and the signal lines 2 arranged in a matrix,
To realize the IPS mode, scan line 1 or signal line 2
A thin film transistor (TF) having a common signal line 3 and a pixel electrode 5 which extend in a direction parallel to the reference voltage and a pixel electrode 5, and a thin film transistor formed at the intersection of the scanning line and the signal line.
T) The substrate on the side and the substrate on the color filter side provided with the black matrix layer and the color layer are opposed to each other with the liquid crystal layer interposed therebetween, and an electric field is generated between the common signal line and the pixel electrode. The present invention can be applied to all liquid crystal display devices that perform display by rotating the direction of the molecular axis in a plane parallel to the TFT-side substrate.
【００２３】なお、実際の液晶表示パネルでは、液晶層
の厚みを保持するためのスペーサや、液晶分子を外部に
漏らさないためのシールなどを必要とするが、これらの
要素は、この発明に直接的に関係するものでないため図
示及び説明を省略する。Incidentally, an actual liquid crystal display panel requires a spacer for maintaining the thickness of the liquid crystal layer, a seal for preventing liquid crystal molecules from leaking outside, and the like. The illustration and the description are omitted because they are not related to each other.
【００２４】本発明の第２の実施形態としてシールドパ
ターンを共通信号線に導通させずに、信号線３と導通し
て同電位となるようにしたものである。すなわち、信号
線３のパターンを図３に示すように、走査線１上の少な
くとも一部分、大半、または全部を覆うように変更する
ことによって、信号線２の電位によって走査線１の電位
をシールドするものである。本例では第１の実施の形態
例に比べて若干シールドの安定性は低下するが、従来例
での画素電極と同電位とする場合には、保持時間しか電
位を維持できないのに対して信号線と同電位とすれば、
より長く電位を固定でき、安定したシールド状態を保つ
ことができる。また、導通用のコンタクトホールが不要
となるので、製造を容易にする付帯的な効果もある。な
お、図３において、図１の構成部分と同一の各部には、
同一の符号を付してその説明を省略する。As a second embodiment of the present invention, the shield pattern is not conducted to the common signal line, but is conducted to the signal line 3 to have the same potential. That is, by changing the pattern of the signal line 3 so as to cover at least a part, most, or all of the scanning line 1 as shown in FIG. 3, the potential of the scanning line 1 is shielded by the potential of the signal line 2. Things. In this example, the stability of the shield is slightly reduced as compared with the first embodiment. However, when the potential is the same as that of the pixel electrode in the conventional example, the potential can be maintained only for the holding time. If the potential is the same as the line,
The potential can be fixed for a longer time, and a stable shield state can be maintained. Further, since a contact hole for conduction is not required, there is an additional effect of facilitating manufacture. In FIG. 3, the same components as those in FIG.
The same reference numerals are given and the description is omitted.
【００２５】[0025]
【発明の効果】以上説明したように本発明によれば、走
査線上に共通信号線または信号線の電位によってシール
ドすることや、信号線の電位によってシールドすること
によって、走査線の電位によるカラーフィルタ側基板の
ブラックマトリックス層への影響を低減し、表示むらの
悪化を防ぐことができる。また、ＴＦＴ側電位がブラッ
クマトリックス層へ影響しにくくなることによって、ブ
ラックマトリックス層の低抵抗化が可能となり、チャー
ジアップによるむらを低減できる。As described above, according to the present invention, by shielding the scanning lines with the potential of the common signal line or the signal line, or by shielding the scanning lines with the potential of the signal line, the color filter can be formed by the potential of the scanning line. The influence on the black matrix layer of the side substrate can be reduced, and the deterioration of display unevenness can be prevented. Further, since the TFT side potential is less likely to affect the black matrix layer, the resistance of the black matrix layer can be reduced, and unevenness due to charge-up can be reduced.
【図１】本発明の第１の実施形態であるＴＦＴ側基板に
おける１画素の一部のパターンを説明する平面図であ
る。FIG. 1 is a plan view illustrating a partial pattern of one pixel on a TFT-side substrate according to a first embodiment of the present invention.
【図２】図１のＡ−Ａの断面を示す断面図である。FIG. 2 is a sectional view showing a section taken along line AA of FIG. 1;
【図３】本発明の第２の実施形態であるＴＦＴ側基板に
おける１画素の一部のパターンを説明する平面図であ
る。FIG. 3 is a plan view illustrating a partial pattern of one pixel on a TFT-side substrate according to a second embodiment of the present invention.
【図４】従来の装置におけるＴＦＴ側基板とカラーフィ
ルタ側基板の１画素部分の構成を説明する断面図であ
る。FIG. 4 is a cross-sectional view illustrating a configuration of one pixel portion of a TFT-side substrate and a color filter-side substrate in a conventional device.
１ 走査線 ２ 信号線 ３ 共通信号線 ４ 薄膜トランジスタ ５ 画素電極 ６ シールドパターン ７ ゲート絶縁層 ８ パッシベーション膜 ９ ＴＦＴ側基板 １０ カラーフィルタ側基板 １１ ブラックマトリックス層 １２ 色層 １３ 信号線からブラックマトリックス層への電位の
動きを示す矢印 １４ ブラックマトリックス層から色層への電位の動
きを示す矢印 １５ 本来の液晶分子 １６ 色層と画素部に電位差が生じた場合の液晶分子 １７ 液晶層 ７６ コンタクトホールReference Signs List 1 scanning line 2 signal line 3 common signal line 4 thin film transistor 5 pixel electrode 6 shield pattern 7 gate insulating layer 8 passivation film 9 TFT side substrate 10 color filter side substrate 11 black matrix layer 12 color layer 13 from signal line to black matrix layer Arrow indicating the movement of the potential 14 Arrow indicating the movement of the potential from the black matrix layer to the color layer 15 Original liquid crystal molecules 16 Liquid crystal molecules when a potential difference occurs between the color layer and the pixel portion 17 Liquid crystal layer 76 Contact hole
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ０９Ｆ 9/30 ３４９ Ｇ０２Ｆ 1/136 ５００ Ｆターム(参考） 2H092 GA14 GA64 JA26 JA29 JA38 JA42 JA44 JA46 JB13 JB23 JB32 JB33 JB38 JB51 JB57 JB63 JB69 KB24 MA13 MA17 MA35 MA37 NA25 PA08 PA09 QA06 QA18 5C094 AA03 AA37 AA55 BA03 BA44 CA19 CA24 EA04 EA10 ED03 5G435 AA14 AA16 BB12 CC09 CC12 GG32 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (reference) G09F 9/30 349 G02F 1/136 500 F term (reference) 2H092 GA14 GA64 JA26 JA29 JA38 JA42 JA44 JA46 JB13 JB23 JB32 JB33 JB38 JB51 JB57 JB63 JB69 KB24 MA13 MA17 MA35 MA37 NA25 PA08 PA09 QA06 QA18 5C094 AA03 AA37 AA55 BA03 BA44 CA19 CA24 EA04 EA10 ED03 5G435 AA14 AA16 BB12 CC09 CC12 GG32
Claims (7)
線及び信号線と、前記走査線又は前記信号線に平行に延
びて基準電位を与える共通信号線と、画素電極と、前記
走査線と前記信号線との交差部に形成されたスイッチン
グ素子とを有する能動素子側基板と、ブラックマトリッ
クス層と色層を備えたカラーフィルタ側基板とを液晶層
を挟んで対向させ、前記共通信号線と前記画素電極との
間に電界を発生させ、前記液晶層の液晶分子の分子軸の
方向を前記能動素子側基板に平行な面内で回転させて表
示を行う液晶表示装置において、前記共通信号線または
前記信号線と同電位を有するシールド電極が、前記走査
線との間に絶縁層を挟んで、前記スイッチング素子の形
成領域及び信号線との交点以外の領域に存在する走査線
の少なくとも一部分を覆っていることを特徴とする液晶
表示装置。A plurality of scanning lines and signal lines arranged in a matrix; a common signal line extending in parallel with the scanning lines or the signal lines to provide a reference potential; a pixel electrode; An active element side substrate having a switching element formed at an intersection with a signal line and a color filter side substrate having a black matrix layer and a color layer are opposed to each other with a liquid crystal layer interposed therebetween, and the common signal line and the common signal line In a liquid crystal display device that generates an electric field between the pixel electrode and the liquid crystal layer and performs a display by rotating a direction of a molecular axis of liquid crystal molecules in a plane parallel to the active element side substrate, the common signal line or A shield electrode having the same potential as the signal line, at least a part of a scan line existing in a region other than an intersection with the switching element formation region and the signal line, with an insulating layer interposed therebetween; A liquid crystal display device characterized by covering the device.
電位となるように前記絶縁層に設けられたコンタクトホ
ールを介して前記シールド電極と前記共通信号線とが導
通されていることを特徴とする請求項１記載の液晶表示
装置。2. The method according to claim 1, wherein the shield electrode and the common signal line are electrically connected via a contact hole provided in the insulating layer so that the shield electrode has the same potential as the common signal line. The liquid crystal display device according to claim 1.
であり、かつ前記シールド電極と前記信号線とは同一平
面上に形成されて互いに導通されていることを特徴とす
る請求項１記載の液晶表示装置。3. The device according to claim 1, wherein the shield electrode has the same potential as the signal line, and the shield electrode and the signal line are formed on the same plane and are electrically connected to each other. Liquid crystal display.
材により形成されていることを特徴とする請求項１記載
の液晶表示装置。4. The liquid crystal display device according to claim 1, wherein the shield electrode is formed of the same member as the signal line.
たは全部を覆っていることを特徴とする請求項１記載の
液晶表示装置。5. The liquid crystal display device according to claim 1, wherein the shield electrode covers most or all of the scanning lines.
タであることを特徴とする請求項１記載の液晶表示装
置。6. The liquid crystal display device according to claim 1, wherein said switching element is a thin film transistor.
材料からなることを特徴とする請求項１記載の液晶表示
装置。7. The liquid crystal display device according to claim 1, wherein the black matrix layer is made of a conductive material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36412599A JP3655793B2 (en) | 1999-12-22 | 1999-12-22 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36412599A JP3655793B2 (en) | 1999-12-22 | 1999-12-22 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001183699A true JP2001183699A (en) | 2001-07-06 |
| JP3655793B2 JP3655793B2 (en) | 2005-06-02 |
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ID=18481036
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36412599A Expired - Lifetime JP3655793B2 (en) | 1999-12-22 | 1999-12-22 | Liquid crystal display |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6704084B2 (en) | 2000-03-16 | 2004-03-09 | International Business Machines Corporation | Liquid-crystal display wherein a common potential is supplied to an alignment film |
| US6791651B2 (en) * | 2001-12-28 | 2004-09-14 | Lg. Philips Lcd Co., Ltd. | Array substrate for IPS mode liquid crystal display device and fabricating method for the same |
| JP2005241923A (en) * | 2004-02-26 | 2005-09-08 | Nec Lcd Technologies Ltd | Liquid crystal display and its manufacturing method |
| KR100908357B1 (en) * | 2006-08-09 | 2009-07-20 | 엡슨 이미징 디바이스 가부시키가이샤 | Transverse electric field liquid crystal display panel |
| JP2010145862A (en) * | 2008-12-19 | 2010-07-01 | Toshiba Mobile Display Co Ltd | Liquid crystal display device |
-
1999
- 1999-12-22 JP JP36412599A patent/JP3655793B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6704084B2 (en) | 2000-03-16 | 2004-03-09 | International Business Machines Corporation | Liquid-crystal display wherein a common potential is supplied to an alignment film |
| US6791651B2 (en) * | 2001-12-28 | 2004-09-14 | Lg. Philips Lcd Co., Ltd. | Array substrate for IPS mode liquid crystal display device and fabricating method for the same |
| JP2005241923A (en) * | 2004-02-26 | 2005-09-08 | Nec Lcd Technologies Ltd | Liquid crystal display and its manufacturing method |
| US7936428B2 (en) | 2004-02-26 | 2011-05-03 | Nec Lcd Technologies, Ltd | Liquid crystal display device with an electric-field shielding layer and method of fabricating the same |
| KR100908357B1 (en) * | 2006-08-09 | 2009-07-20 | 엡슨 이미징 디바이스 가부시키가이샤 | Transverse electric field liquid crystal display panel |
| US7787091B2 (en) | 2006-08-09 | 2010-08-31 | Sony Corporation | Transverse field type liquid crystal display panel |
| JP2010145862A (en) * | 2008-12-19 | 2010-07-01 | Toshiba Mobile Display Co Ltd | Liquid crystal display device |
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| Publication number | Publication date |
|---|---|
| JP3655793B2 (en) | 2005-06-02 |
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