JP2001178154A - Electrostatic actuator and method of manufacture - Google Patents
Electrostatic actuator and method of manufactureInfo
- Publication number
- JP2001178154A JP2001178154A JP35478999A JP35478999A JP2001178154A JP 2001178154 A JP2001178154 A JP 2001178154A JP 35478999 A JP35478999 A JP 35478999A JP 35478999 A JP35478999 A JP 35478999A JP 2001178154 A JP2001178154 A JP 2001178154A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- electrostatic actuator
- dielectric layer
- coating layer
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、静電気力を動力源
とする静電アクチュエータ及びその製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an electrostatic actuator powered by electrostatic force and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、誘電体基材上に複数の電極を形成
し、この電極を覆うように誘電体層を形成した静電アク
チュエータにおいて、誘電体層は、ＰＥＴ（ポリエチレ
ンテレフタレート）フィルムなどの高分子材料で形成さ
れていた。ＰＥＴなどの高分子材料は、薄いフィルム状
のものが容易に出来るという利点があるものの、一般的
に誘電率、耐電圧、熱伝導性、耐摩耗性が低いため、静
電アクチュエータの初期性能向上や耐久性向上が困難で
あった。そこで誘電体層としてセラミックスの溶射法な
どで形成することも考えられたが、薄くて緻密な誘電体
層を形成することは非常に困難であった。2. Description of the Related Art Conventionally, in an electrostatic actuator in which a plurality of electrodes are formed on a dielectric substrate and a dielectric layer is formed so as to cover the electrodes, the dielectric layer is formed of a PET (polyethylene terephthalate) film or the like. It was made of a polymer material. Although polymer materials such as PET have the advantage that thin films can be easily formed, they generally have low dielectric constant, withstand voltage, thermal conductivity, and abrasion resistance, so they improve the initial performance of electrostatic actuators. And it was difficult to improve durability. Therefore, it has been considered to form the dielectric layer by a ceramic spraying method, but it has been very difficult to form a thin and dense dielectric layer.
【０００３】[0003]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１の発明は、誘電体基材上に複数の電
極を形成し、この電極を覆うように誘電体層を形成した
静電アクチュエータにおいて、この電極または誘電体層
をガスデポジション法（気体堆積法）により形成したこ
とを特徴とする。ガスデポジション法は、製膜の出発原
料である原料粉末の持つ諸特性をほぼ維持しながら、様
々な基材の表面に、緻密で、かつ様々な形状、厚みの膜
を形成できる。電極と誘電体層は両方をガスデポジショ
ン法で形成してもよい。In order to achieve the above object, according to the first aspect of the present invention, a plurality of electrodes are formed on a dielectric substrate, and a dielectric layer is formed so as to cover the electrodes. In the electrostatic actuator, the electrode or the dielectric layer is formed by a gas deposition method (gas deposition method). The gas deposition method can form dense films of various shapes and thicknesses on the surface of various base materials while almost maintaining various properties of the raw material powder as a starting material for film formation. Both the electrode and the dielectric layer may be formed by a gas deposition method.
【０００４】上記目的を達成するためになされた請求項
２の発明は、誘電体基材上に複数の電極を形成し、この
電極を覆うように誘電体層を形成した静電アクチュエー
タにおいて、誘電体層の表面にガスデポジション法によ
りコーティング層を形成したことを特徴とする。コーテ
ィング層を形成することによって、誘電体層の耐摩耗性
向上などを向上させた静電アクチュエータが提供でき
る。According to a second aspect of the present invention, there is provided an electrostatic actuator in which a plurality of electrodes are formed on a dielectric substrate and a dielectric layer is formed so as to cover the electrodes. A coating layer is formed on the surface of the body layer by a gas deposition method. By forming the coating layer, an electrostatic actuator in which the wear resistance of the dielectric layer is improved can be provided.
【０００５】本発明の好ましい態様として、誘電体層表
面またはコーティング層表面を研磨処理する。研磨処理
することによって、摩擦抵抗の軽減が得られる。In a preferred embodiment of the present invention, the surface of the dielectric layer or the surface of the coating layer is polished. The polishing treatment can reduce frictional resistance.
【０００６】本発明の好ましい態様として、誘電体層ま
たはコーティング層の誘電体材料としてＡｌ2Ｏ3を主原
料とし、これにＳｉ3Ｎ4、ＳｉＣ、ＴｉＯ2、Ｃｒ2Ｏ3
のうちの少なくとも１つを混合するようにする。誘電体
材料としてＡｌ2Ｏ3を主原料とし、これにＳｉ3Ｎ4、Ｓ
ｉＣ、ＴｉＯ2、Ｃｒ2Ｏ3のうちの少なくとも１つを混
合するすることによって、耐電圧向上が得られる。In a preferred embodiment of the present invention, Al 2 O 3 is used as a main material as a dielectric material of a dielectric layer or a coating layer, and Si 3 N 4 , SiC, TiO 2 , Cr 2 O 3
At least one of which is mixed. Al 2 O 3 is used as a main material as a dielectric material, and Si 3 N 4 , S
By mixing at least one of iC, TiO 2 , and Cr 2 O 3 , the withstand voltage can be improved.
【０００７】本発明の好ましい態様として、誘電体層ま
たはコーティング層の別の誘電体材料としては、ＢａＴ
ｉＯ3を主原料とした高誘電率材料を用いる。誘電体層
およびコーティング層の材料として、ＢａＴｉＯ3を主
原料とした高誘電率材料を用いることによって、低電圧
でも特性の向上が得られる。In a preferred embodiment of the present invention, the dielectric layer or another dielectric material of the coating layer is BaT.
A high dielectric constant material using iO 3 as a main material is used. By using a high dielectric constant material mainly composed of BaTiO 3 as a material for the dielectric layer and the coating layer, the characteristics can be improved even at a low voltage.
【０００８】本発明の好ましい態様として、誘電体層ま
たはコーティング層の高熱伝導度材料として、Ｓｉ
3Ｎ4、ＳｉＣ、ＡｌＮを主原料とした原料を用いる。誘
電体層およびコーティング層に高熱伝導度材料材料とし
て、Ｓｉ3Ｎ4、ＳｉＣ、ＡｌＮを主原料とした原料を用
いることによって、熱伝導性の向上が得られる。In a preferred embodiment of the present invention, Si as a material having a high thermal conductivity of a dielectric layer or a coating layer is used.
3 N 4, SiC, using a raw material of AlN as a main raw material. By using a raw material mainly composed of Si 3 N 4 , SiC, and AlN as the high thermal conductivity material for the dielectric layer and the coating layer, an improvement in thermal conductivity can be obtained.
【０００９】本発明の好ましい態様として、誘電体層ま
たはコーティング層の耐摩耗性材料としては、Ｚｒ
Ｏ2、Ｓｉ3Ｎ4、ＳｉＣ、ＤＬＣ（ｄｉａｍｏｎｄ−ｌ
ｉｋｅ−ｃａｒｂｏｎ）等を主原料とした原料を用い
る。誘電体層またはコーティング層にＺｒＯ2、Ｓｉ3Ｎ
4、ＳｉＣ、ＤＬＣ（ｄｉａｍｏｎｄ−ｌｉｋｅ−ｃａ
ｒｂｏｎ）等を主原料とした原料を用いることによっ
て、耐摩耗性の向上が得られる。In a preferred embodiment of the present invention, the wear-resistant material of the dielectric layer or the coating layer includes Zr.
O 2 , Si 3 N 4 , SiC, DLC (diamond-l
ike-carbon) or the like. ZrO 2 , Si 3 N for the dielectric layer or the coating layer
4 , SiC, DLC (diamond-like-ca
By using a raw material whose main raw material is rbon) or the like, an improvement in wear resistance can be obtained.
【００１０】[0010]
【発明の実施の形態】本発明にかかる実施例１について
説明する。これはパルス駆動型静電アクチュエータに応
用したもので、図１に示すように、アルミナセラミック
等の誘電体基材２上に、スパッタ法等で電極４を形成
し、さらにこの電極４を覆うように、ガスデポジション
法にて誘電体層５を形成する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 according to the present invention will be described. This is applied to a pulse drive type electrostatic actuator. As shown in FIG. 1, an electrode 4 is formed on a dielectric substrate 2 such as alumina ceramic by a sputtering method or the like, and the electrode 4 is further covered. Next, a dielectric layer 5 is formed by a gas deposition method.
【００１１】本発明にかかる実施例２について説明す
る。図２に示すように、スパッタ法等のガスデポジショ
ン法と異なる製法で作製した誘電体層６の表面に、ガス
デポジション法にてコーティング層７を形成する。A second embodiment according to the present invention will be described. As shown in FIG. 2, a coating layer 7 is formed by a gas deposition method on the surface of a dielectric layer 6 manufactured by a method different from a gas deposition method such as a sputtering method.
【００１２】本発明にかかる実施例３について説明す
る。図３は断面図で、図４はその平面図である。図３お
よび図４に示すように、誘電体層５の表面を凸凹形状に
形成する。このような形状をとることにより、静電アク
チュエータ駆動時の摩擦抵抗を軽減できる。A third embodiment according to the present invention will be described. FIG. 3 is a sectional view, and FIG. 4 is a plan view thereof. As shown in FIGS. 3 and 4, the surface of the dielectric layer 5 is formed in an uneven shape. By adopting such a shape, the frictional resistance at the time of driving the electrostatic actuator can be reduced.
【００１３】本発明にかかる実施例４について説明す
る。図５は断面図で、図６はその平面図である。図５お
よび図６に示すように、コーティング層７を部分的に形
成する。このような形状をとることにより、静電アクチ
ュエータ駆動時の摩擦抵抗を軽減できる。A fourth embodiment according to the present invention will be described. FIG. 5 is a sectional view, and FIG. 6 is a plan view thereof. As shown in FIGS. 5 and 6, the coating layer 7 is partially formed. By adopting such a shape, the frictional resistance at the time of driving the electrostatic actuator can be reduced.
【００１４】本発明にかかる実施例５について説明す
る。これは交流駆動両電極形静電アクチュエータに応用
したもので、図７は断面図で、図８はその平面図であ
る。図７および図８に示すように、誘電体層５の表面を
凸凹形状に形成する。このような形状をとることによ
り、静電アクチュエータ駆動時の摩擦抵抗を軽減でき
る。A fifth embodiment according to the present invention will be described. FIG. 7 is a cross-sectional view, and FIG. 8 is a plan view thereof, which is applied to an AC-driven double-electrode type electrostatic actuator. As shown in FIGS. 7 and 8, the surface of the dielectric layer 5 is formed in an uneven shape. By adopting such a shape, the frictional resistance at the time of driving the electrostatic actuator can be reduced.
【００１５】[0015]
【発明の効果】ガスデポジション法を用いて静電アクチ
ュエータを製造することにより、任意の基材に、緻密
で、かつ意図する特性を得られる誘電体層が容易に形成
できるようになり、静電アクチュエータの特性向上が期
待できる。According to the present invention, by manufacturing an electrostatic actuator by using a gas deposition method, it is possible to easily form a dense dielectric layer having desired characteristics on an arbitrary base material. An improvement in the characteristics of the electric actuator can be expected.
【図１】 本発明にかかる実施例１の断面図FIG. 1 is a sectional view of a first embodiment according to the present invention.
【図２】 本発明にかかる実施例２の断面図FIG. 2 is a sectional view of a second embodiment according to the present invention.
【図３】 本発明にかかる実施例３の断面図FIG. 3 is a sectional view of a third embodiment according to the present invention.
【図４】 本発明にかかる実施例３の平面図FIG. 4 is a plan view of a third embodiment according to the present invention.
【図５】 本発明にかかる実施例４の断面図FIG. 5 is a sectional view of a fourth embodiment according to the present invention.
【図６】 本発明にかかる実施例４の平面図FIG. 6 is a plan view of a fourth embodiment according to the present invention.
【図７】 本発明にかかる実施例５の断面図FIG. 7 is a sectional view of a fifth embodiment according to the present invention.
【図８】 本発明にかかる実施例５の平面図FIG. 8 is a plan view of a fifth embodiment according to the present invention.
【図９】 従来技術の断面図FIG. 9 is a sectional view of a conventional technique.
１…パルス駆動電源、２…誘電体基材、３…移動子、４
…電極、５…ガスデポジション法で作製した誘電体層、
６…ガスデポジション法以外で作製した誘電体層、７…
ガスデポジション法で作製した誘電体コーティング層、
８…誘電体層の凸部、９…誘電体層の凹部、１０…三相
交流電源REFERENCE SIGNS LIST 1 pulse drive power supply 2 dielectric substrate 3 mover 4
... electrodes, 5 ... dielectric layer produced by gas deposition method,
6 ... dielectric layer produced by other than gas deposition method, 7 ...
Dielectric coating layer produced by gas deposition method,
8: convex portion of dielectric layer, 9: concave portion of dielectric layer, 10: three-phase AC power supply
───────────────────────────────────────────────────── フロントページの続き (72)発明者 横山 達郎 福岡県北九州市小倉北区中島２丁目１番１ 号 東陶機器株式会社内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Tatsuro Yokoyama 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka
Claims (7)
の電極を覆うように誘電体層を形成した静電アクチュエ
ータにおいて、この電極または誘電体層をガスデポジシ
ョン法（気体堆積法）により形成したことを特徴とする
静電アクチュエータ。In an electrostatic actuator in which a plurality of electrodes are formed on a dielectric substrate and a dielectric layer is formed so as to cover the electrodes, the electrodes or the dielectric layers are formed by a gas deposition method (gas deposition method). An electrostatic actuator characterized by being formed by (1).
の電極を覆うように誘電体層を形成した静電アクチュエ
ータにおいて、誘電体層の表面にガスデポジション法に
よりコーティング層を形成したことを特徴とする静電ア
クチュエータ。2. An electrostatic actuator in which a plurality of electrodes are formed on a dielectric substrate and a dielectric layer is formed so as to cover the electrodes, wherein a coating layer is formed on the surface of the dielectric layer by a gas deposition method. An electrostatic actuator characterized in that:
を研磨処理したことを特徴とする請求項１項または請求
項２記載の静電アクチュエータ。3. The electrostatic actuator according to claim 1, wherein the surface of the dielectric layer or the surface of the coating layer is polished.
材料としてＡｌ2Ｏ3を主原料とし、これにＳｉ3Ｎ4、Ｓ
ｉＣ、ＴｉＯ2、Ｃｒ2Ｏ3のうちの少なくとも１つが混
合されていることを特徴とする請求項１から請求項３の
いずれかに記載の静電アクチュエータ。Wherein the for Al 2 O 3 dielectric material of the dielectric layer or coating layer as a main raw material, which the Si 3 N 4, S
iC, electrostatic actuator according to any one of claims 1 to 3, characterized in that at least one of TiO 2, Cr 2 O 3 are mixed.
電体材料としては、ＢａＴｉＯ3を主原料とした高誘電
率材料を用いることを特徴とする請求１から請求項３の
いずれかに記載の静電アクチュエータ。5. The dielectric material according to claim 1, wherein a high dielectric constant material mainly composed of BaTiO 3 is used as another dielectric material of the dielectric layer or the coating layer. Electrostatic actuator.
導度材料としては、Ｓｉ3Ｎ4、ＳｉＣ、ＡｌＮを主原料
とした原料を用いたことを特徴とする請求項１から請求
項３のいずれかに記載の静電アクチュエータ。6. The material according to claim 1, wherein a material having Si 3 N 4 , SiC, or AlN as a main material is used as the high thermal conductivity material of the dielectric layer or the coating layer. An electrostatic actuator according to any one of the above.
性材料としては、ＺｒＯ2、Ｓｉ3Ｎ4、ＳｉＣ、ＤＬＣ
（ｄｉａｍｏｎｄ−ｌｉｋｅ−ｃａｒｂｏｎ）等を主原
料とした原料を用いたことを特徴とする請求項１から請
求項３のいずれかに記載の静電アクチュエータ。7. The wear-resistant material of the dielectric layer or the coating layer includes ZrO 2 , Si 3 N 4 , SiC, DLC
The electrostatic actuator according to any one of claims 1 to 3, wherein a raw material mainly comprising (diamond-like-carbon) or the like is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35478999A JP2001178154A (en) | 1999-12-14 | 1999-12-14 | Electrostatic actuator and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35478999A JP2001178154A (en) | 1999-12-14 | 1999-12-14 | Electrostatic actuator and method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001178154A true JP2001178154A (en) | 2001-06-29 |
Family
ID=18439924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35478999A Pending JP2001178154A (en) | 1999-12-14 | 1999-12-14 | Electrostatic actuator and method of manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001178154A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7304410B2 (en) * | 2004-03-25 | 2007-12-04 | Fanuc Ltd | Electrostatic motor including projections providing a clearance between stator and slider electrode members |
| US7372186B2 (en) * | 2004-01-23 | 2008-05-13 | Fanuc Ltd | Electrostatic motor with clearance maintaining structure |
-
1999
- 1999-12-14 JP JP35478999A patent/JP2001178154A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372186B2 (en) * | 2004-01-23 | 2008-05-13 | Fanuc Ltd | Electrostatic motor with clearance maintaining structure |
| US7304410B2 (en) * | 2004-03-25 | 2007-12-04 | Fanuc Ltd | Electrostatic motor including projections providing a clearance between stator and slider electrode members |
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