JP2007081334A5 - - Google Patents

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JP2007081334A5
JP2007081334A5 JP2005270812A JP2005270812A JP2007081334A5 JP 2007081334 A5 JP2007081334 A5 JP 2007081334A5 JP 2005270812 A JP2005270812 A JP 2005270812A JP 2005270812 A JP2005270812 A JP 2005270812A JP 2007081334 A5 JP2007081334 A5 JP 2007081334A5
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Japan
Prior art keywords
thin film
impedance portion
piezoelectric
piezoelectric thin
material deposition
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JP2005270812A
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JP5016210B2 (en
JP2007081334A (en
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Priority claimed from JP2005270812A external-priority patent/JP5016210B2/en
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Publication of JP2007081334A5 publication Critical patent/JP2007081334A5/ja
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Claims (10)

基板と、該基板に堆積された堆積膜により形成され、高インピーダンス部と低インピーダンス部とからなる圧電体を有するトランスにおいて、
前記低インピーダンス部の一つの電極表面積が前記高インピーダンス部の一つの電極表面積よりも大きく形成されていることを特徴とする圧電薄膜積層トランス。 In a transformer having a piezoelectric body formed of a substrate and a deposited film deposited on the substrate and having a high impedance portion and a low impedance portion,
The piezoelectric thin film laminated transformer, wherein one electrode surface area of the low impedance portion is formed larger than one electrode surface area of the high impedance portion. 前記低インピーダンス部の一つの電極の表面が凸凹構造により表面積を大きくするように形成されていることを特徴とする請求項１に記載の圧電薄膜積層トランス。 2. The piezoelectric thin film laminated transformer according to claim 1, wherein the surface of one electrode of the low impedance portion is formed to have a surface area increased by an uneven structure. 前記高インピーダンス部がフラットに形成されていることを特徴とする請求項１又は２に記載の圧電薄膜積層トランス。The piezoelectric thin film laminated transformer according to claim 1, wherein the high impedance portion is formed flat. 前記高インピーダンス部と前記低インピーダンス部とが隣接して形成されており、
前記高インピーダンス部の圧電体が基板に形成された溝部上において浮いていることを特徴とする請求項１から３までのいずれか１項に記載の圧電薄膜トランス。 The high impedance portion and the low impedance portion are formed adjacent to each other,
The piezoelectric thin film transformer according to any one of claims 1 to 3, wherein the piezoelectric body of the high impedance portion floats on a groove formed in the substrate. 前記低インピーダンス部で厚み方向に、前記高インピーダンス部で長さ方向に圧電薄膜が分極されていることを特徴とする請求項１から４までのいずれか１項に記載の圧電薄膜トランス。5. The piezoelectric thin film transformer according to claim 1, wherein the piezoelectric thin film is polarized in the thickness direction at the low impedance portion and in the length direction at the high impedance portion. 6. 前記低インピーダンス部が、前記基板に設けられた絶縁膜に支持されることにより前記高インピーダンス部が前記基板から浮いた状態を維持していることを特徴とする請求項４又は５に記載の圧電薄膜トランス。 The low impedance section, according to claim 4 or 5 wherein the high impedance portion by being supported on an insulating film provided on said substrate characterized in that it maintains the state of being floated from the substrate piezoelectric Thin film transformer. 基板上に犠牲層を形成する工程と、
該犠牲層上に電極を形成する工程と、
該電極の低インピーダンス部が形成される領域に凸凹構造を形成する工程と、
前記凸凹構造を含む電極上に薄膜を堆積する工程と、
該薄膜を加工して圧電体を形成する工程と
を有することを特徴とする圧電薄膜積層トランスの製造方法。 Forming a sacrificial layer on the substrate;
Forming an electrode on the sacrificial layer;
Forming an uneven structure in a region where the low impedance portion of the electrode is formed;
A step you sedimentary a thin film on the electrode including the convex-concave structure,
And a step of forming a piezoelectric body by processing the thin film . A method of manufacturing a piezoelectric thin film laminated transformer. 前記薄膜を堆積する形成する工程は、エピタキシャル成長法を利用する工程であることを特徴とする請求項７に記載の圧電薄膜積層トランスの製造方法。 Step that form to sedimentary said thin film, a method of manufacturing the piezoelectric thin film layer transformer according to claim 7, characterized in that the step of utilizing an epitaxial growth method. 基板上に電極材料堆積膜を堆積するステップと、
該電極材料堆積膜の第１の領域の表面に凹凸を形成するとともに、前記第１の領域と凹凸を形成していない第２の領域との境界における前記電極材料堆積膜を除去してスペースを形成するステップと、
下地の効果を利用して堆積膜の配向制御を行なうステップと、
圧電材料堆積膜を必要な層数だけ堆積し、前記第１の領域において下地の前記電極材料堆積膜の凸凹形状を反映させることにより凸凹形状を形成するステップと、
前記電極材料堆積と前記圧電材料堆積膜とを前記第１の領域において前記凹凸形状を保持できる条件で順次堆積するステップと
を有することを特徴とする圧電薄膜積層トランスの製造方法。 Depositing an electrode material deposition film on the substrate;
Concavities and convexities are formed on the surface of the first region of the electrode material deposition film, and the electrode material deposition film is removed at the boundary between the first region and the second region where the concavities and convexities are not formed. Forming step;
A step of controlling the orientation of the deposited film using the effect of the underlayer;
Depositing the piezoelectric material deposition film in a required number of layers and reflecting the uneven shape of the underlying electrode material deposition film in the first region ,
Sequentially depositing the electrode material deposition and the piezoelectric material deposition film on the first region under a condition capable of maintaining the uneven shape ;
A method of manufacturing a piezoelectric thin film laminated transformer, comprising: 前記圧電材料堆積膜を必要な層数だけ堆積した後に、前記スぺースを絶縁膜で埋めるステップを有することを特徴とする請求項９に記載の圧電薄膜積層トランスの製造方法。The method for manufacturing a piezoelectric thin film laminated transformer according to claim 9, further comprising a step of filling the space with an insulating film after depositing the piezoelectric material deposition film by a required number of layers.
JP2005270812A 2005-09-16 2005-09-16 Piezoelectric thin film laminated transformer and manufacturing method thereof Expired - Fee Related JP5016210B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005270812A JP5016210B2 (en) 2005-09-16 2005-09-16 Piezoelectric thin film laminated transformer and manufacturing method thereof

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Application Number Priority Date Filing Date Title
JP2005270812A JP5016210B2 (en) 2005-09-16 2005-09-16 Piezoelectric thin film laminated transformer and manufacturing method thereof

Publications (3)

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JP2007081334A JP2007081334A (en) 2007-03-29
JP2007081334A5 true JP2007081334A5 (en) 2008-01-17
JP5016210B2 JP5016210B2 (en) 2012-09-05

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101632052B1 (en) * 2014-09-16 2016-06-20 국방과학연구소 Method for manufacturing piezoelectric element
JP2017152575A (en) * 2016-02-25 2017-08-31 京セラ株式会社 Laminated piezoelectric element, acoustic generator including the same, and electronic apparatus
JP7071172B2 (en) * 2017-06-22 2022-05-18 太陽誘電株式会社 Laminated piezoelectric elements, piezoelectric vibration devices, and electronic devices

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* Cited by examiner, † Cited by third party
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JP2643810B2 (en) * 1993-12-20 1997-08-20 日本電気株式会社 Piezoelectric transformer and its driving method
JP2002368299A (en) * 2001-06-12 2002-12-20 Nissin Electric Co Ltd Packaging structure of piezoelectric transformer
JP4662112B2 (en) * 2001-09-05 2011-03-30 独立行政法人産業技術総合研究所 Ferroelectric thin film and manufacturing method thereof
JP3906809B2 (en) * 2002-04-08 2007-04-18 日本電気株式会社 Line element and semiconductor circuit
JP2005005682A (en) * 2003-05-16 2005-01-06 Matsushita Electric Ind Co Ltd Piezoelectric transformer, power supply circuit and lighting system using the same

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